CN100517738C - Image sensed-measuring chip packing structure - Google Patents

Image sensed-measuring chip packing structure Download PDF

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Publication number
CN100517738C
CN100517738C CNB2005100360347A CN200510036034A CN100517738C CN 100517738 C CN100517738 C CN 100517738C CN B2005100360347 A CNB2005100360347 A CN B2005100360347A CN 200510036034 A CN200510036034 A CN 200510036034A CN 100517738 C CN100517738 C CN 100517738C
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CN
China
Prior art keywords
image sensing
plate
sensing chip
matrix
encapsulating structure
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Active
Application number
CNB2005100360347A
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Chinese (zh)
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CN1897288A (en
Inventor
魏史文
吴英政
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changchun Changguang Shiyuan Investment Co ltd
Original Assignee
Yangxin Technology Co ltd
Hongfujin Precision Industry Shenzhen Co Ltd
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Application filed by Yangxin Technology Co ltd, Hongfujin Precision Industry Shenzhen Co Ltd filed Critical Yangxin Technology Co ltd
Priority to CNB2005100360347A priority Critical patent/CN100517738C/en
Priority to US11/448,570 priority patent/US7554184B2/en
Publication of CN1897288A publication Critical patent/CN1897288A/en
Application granted granted Critical
Publication of CN100517738C publication Critical patent/CN100517738C/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Abstract

A sealing structure for the image sensing measuring core chip includes: the loading tool, the image sensing measuring core chip, several leading line and the photic board. The loading tool includes the lead stand and the base body, the lead stand includes several conducting slice, the base body includes several sidewalls and the base, the several sidewalls and the base surround the containing cavity, every conducting slice spaces the embed card on the base body; the image sensing measuring core chip includes several core chip welding underlay and the sensing measuring area; one end of every lead connects to one conducting slice, the other end connects with one core chip welding underlay of the image sensing measuring core chip; the photic board sets on the base body; the sensing measuring area edge of the image sensing measuring core chip spreads the glue, the glue sticks on the photic board, the glue and the photic board surrounds a empty cavity, the sensing measuring area locates in the empty cavity, the image sensing measuring core chip, the lead and the glue locate in the empty cavity.

Description

The encapsulating structure of image sensing chip
[technical field]
The invention relates to a kind of digital camera image sensing chip, especially about a kind of encapsulating structure of image sensing chip.
[background technology]
At present, digital camera and the band digital camera mobile phone more and more universal, the demand of the indispensable core component image sensing chip of digital camera also with grow with each passing day.Simultaneously, the consumer also wishes that digital camera develops towards miniaturization, high-quality, low price direction more, in this way, the manufacturing of image sensing chip encapsulation has been proposed requirements at the higher level.
See also Fig. 1, a kind of existing image sensing chip encapsulation, this image sensor encapsulation comprises some galvanic circles 130, a substrate 146, a framework 148, an image sensor dice 152 and a light-passing board 158.The cross section of this galvanic circle 130 is the ㄈ shape, and it comprises one first current-carrying part 140, one second current-carrying part 142 and one the 3rd current-carrying part 144 of mutual electrical connection.These some galvanic circles 130 are located at the edge of substrate 146 at interval, and first, second and third current-carrying part 140,142,144 of galvanic circle 130 exposes from upper surface, lower surface and the side of substrate 146 respectively.Framework 148 is arranged on the substrate 146, and forms accommodation spaces 150 jointly with substrate 146.Described image sensor dice 152 comprises some weld pads 154, and it is arranged in this accommodation space 150, and it is for to be fixed on the substrate 146 by viscose 160, and its weld pad 154 is electrically connected on first plate 140 of galvanic circle 130 by some lead-in wires 156.Light-passing board 158 is fixed in framework 148 tops by viscose glue 162.
Because above-mentioned image sensing chip 152 and some lead-in wires 156 all are placed in the accommodation space 150 of substrate 146 and framework 148 formation, and for making things convenient for the marking device operation, so make that accommodation space 150 is bigger, thus, there is more dust in accommodation space 150 after the encapsulation, and being installed in camera lens and the camera lens focusing process inevitably in the encapsulation of encapsulation process and image sensing chip, vibrations all can make the impurity such as dust on accommodation space 150 perisporiums drop on image sensing chip 152, pollute the sensing area of image sensing chip 152, cause quality bad; In addition, this lead-in wire 156 is exposed, is subject to impurity such as the dust infringement in the accommodation space 150, is enough protected; And second current-carrying part 142 and the 3rd current-carrying part 144 of this galvanic circle 130 all expose the external world, therefore, extraneous rapid wear and galvanic circles 130 such as moisture, thus have influence on the reliability that this image sensing chip encapsulates.
[summary of the invention]
In view of above content, a kind of less contaminated, quality is provided, and the encapsulating structure of image sensing chip is real in necessary preferably.
A kind of encapsulating structure of image sensing chip comprises a carrier, an image sensing chip, some lead-in wires and a light-passing board.This carrier comprises a lead frame and a matrix, this lead frame comprises plurality of conducting strips, this matrix comprises some sidewalls and a bottom, these some sidewalls and bottom surround a containing cavity, this bottom is formed with the opening of some spaces, each conducting strip is placed in respectively in the opening, and an end of this conducting strip exposes from this opening; This image sensing chip comprises a plurality of chips weld pad and a sensing area; One end of each lead-in wire is connected to a conducting strip, and the other end is connected to a chip pad of image sensing chip; This light-passing board is arranged on the matrix, and containing cavity is sealed; The sensing area periphery of image sensing chip is coated with viscose, this viscose attaches on the light-passing board simultaneously, the sensing area of image sensing chip is coated in the cavity that this viscose and light-passing board surround, and this image sensing chip, some lead-in wires and viscose all are positioned at this containing cavity.
Compare prior art, the sensing area of the encapsulating structure of described image sensing chip be coated on that viscose forms than in the areola, so it is extremely difficult contaminated, thereby make this image sensing chip maintenance better quality; The lead-in wire of this this image sensing chip is coated by viscose, has obtained good protection; Lead frame is except that its electric connection place to external world, and remainder is all coated wherein by matrix, can reduce the influence of moisture etc. and then improve production reliability.
[description of drawings]
Fig. 1 is the encapsulating structure schematic diagram of existing image sensing chip;
Fig. 2 is the structural representation of better embodiment of the present invention;
Fig. 3 is the upward view of better embodiment of the present invention.
[specific embodiment]
See also Fig. 2, the encapsulating structure of better embodiment image sensing chip of the present invention comprises an image sensing chip 22, a carrier (figure is mark not), some lead-in wires 26 and a light-passing board 28.This carrier comprises a lead frame 20 and a matrix 24, and this lead frame 20 and matrix 24 are by the embedding method of forming (insert-molding) carrier that is made of one piece.
This matrix 24 is a cuboid, and it is made by plastic material, and it comprises four sidewalls 240 and a bottom 243, and this four sidewall 240 surrounds a containing cavity 30 jointly with bottom 243.This sidewall 240 comprises a top 241 and a bottom 242, some grooves (figure mark) compartment of terrain that is parallel to each other be formed at this bottom 242 with 241 junctions, top, a side of the bottom 242 contiguous containing cavities 30 of two opposing sidewalls 240 is provided with an inclined-plane 244.Offer some spaced apertures 245 that are parallel to each other on this bottom 243, opening 245 is corresponding with groove.
This lead frame 20 comprises several conducting strips, and this conducting strip can be sheet metal.Each conducting strip comprises one first plate 202, one second plate 204 and one the 3rd plate 206, this first plate 202 and second plate 20 are parallel to each other and stagger certain distance at interval, the 3rd plate 206 relative first plates 202 and second plate, 204 inclination certain angles, and connect this first plate 202 and second plate 204.See also Fig. 3, the conducting strip of this lead frame 20 is divided into two groups, and these two groups of conducting strips are symmetrically distributed and are arranged on the two opposite side walls 240 of matrix 24, and the conducting strip space in each group is arranged in parallel.First plate 202 of described conducting strip is embedded in the groove of matrix 24, and second plate 204 inserts in an opening 245 places of matrix 24, and the 3rd plate 206 leans on to be located on the inclined-plane 244 of matrix 24 bottoms 242.Second plate 204 links to each other with a printed circuit board (PCB), thereby lead frame 20 is electrically connected on the printed circuit board (PCB), in order to electric signal is passed to the outside.
The end face central authorities of this image sensing chip 22 are provided with a sensing area 222, and these sensing area 222 peripheries are laid with plurality of chips weld pad 224.This image sensing chip 22 is arranged in the containing cavity 30 of matrix 24, and it is for being fixed on the bottom 243 of matrix 24 by viscose (figure is mark not).
One end of each lead-in wire 26 is connected to a chip pad 224 of image sensing chip 22, and the other end is connected to first plate 202 of a conducting strip of lead frame 20.This lead-in wire 26 is made by better conductivity metal materials such as gold, and it is used for the signal of image sensing chip 22 is transferred to lead frame 20.
Light-passing board 28 is a transparent glass, it is fixedly set on the matrix 24 by viscose (figure is mark not), with containing cavity 30 sealings, thereby image sensing chip 22 is enveloped, make image sensing chip 22 see through light-passing board 28 and accept the light signal, and prevent impurity such as dust from falling on the image sensing chip 22 and pollute its sensing area 222.
Sensing area 222 peripheries of image sensing chip 22 are coated with the viscose 34 that a whole circle extends to lead frame 20 and matrix 24, this viscose 34 with leaded 26 coat and cover the 3rd plate 206 of conduction rack 20 and inclined-plane 244 sidewalls of matrix 24, only expose the sensing area 222 of matrix 24.This viscose 34 also attaches on the light-passing board 28, thereby forms a less enclosed cavity 32, makes the sensing area 222 of image sensing chip 22 be positioned at this cavity 32; so; because sensing area 222 is positioned at less cavity 32, makes sensing area 222 obtain fabulous protection, be difficult to contaminated.Described some lead-in wires 26 and this viscose 34 all are positioned at the containing cavity 30 of matrix 24.
The conducting strip that is appreciated that this lead frame 20 can be and is divided into any group, only needs that it is embedded in matrix 24 and gets final product; The 3rd plate 206 of this lead frame 20 can not tilt, and perpendicular to first plate 202 and second plate 204; Each conducting strip of lead frame 20 can not be parallel to each other, and only needs it not contact mutually and gets final product.

Claims (9)

1. the encapsulating structure of an image sensing chip, it comprises a carrier, an image sensing chip, some lead-in wires and a light-passing board, this image sensing chip comprises a plurality of chips weld pad and a sensing area, it is characterized in that: this carrier comprises a lead frame and a matrix, this lead frame comprises plurality of conducting strips, this matrix comprises some sidewalls and a bottom, these some sidewalls and bottom surround a containing cavity jointly, this bottom is formed with some spaced apertures that are parallel to each other, each conducting strip is placed in respectively in the opening, and an end of this conducting strip exposes from this opening; One end of each lead-in wire is connected to a conducting strip, and the other end is connected to a chip pad of image sensing chip; This light-passing board is arranged on the matrix, thereby with described containing cavity sealing; This image sensing chip and leaded this containing cavity that all is positioned at, the sensing area periphery of image sensing chip is coated with viscose, and this viscose attaches on the light-passing board simultaneously, and the sensing area of image sensing chip is coated in the cavity that this viscose and light-passing board surround.
2. as the encapsulating structure of claim the 1 described image sensing chip, it is characterized in that: this lead frame and matrix are one-body molded by embedding the method for forming.
3. as the encapsulating structure of claim the 1 described image sensing chip, it is characterized in that: this conducting strip comprises one first plate, one second plate and one the 3rd plate, this first plate and second plate are parallel to each other and necessarily stagger distance at interval, relative first plate of the 3rd plate and the second plate inclination certain angle, it connects this first plate and second plate.
4. as the encapsulating structure of claim the 1 described image sensing chip, it is characterized in that: this matrix is made by plastic material.
5. as the encapsulating structure of claim the 3 described image sensing chips, it is characterized in that: this matrix is a cuboid, described sidewall comprises a bottom and a top, some grooves space is opened in bottom and junction, top, one side of the contiguous containing cavity in this bottom is provided with an inclined-plane, and the opening that described bottom is offered is corresponding with groove, and first plate of conducting strip is embedded in the described groove of matrix, second plate is located at the described opening part of matrix, and the 3rd plate leans on is located at this inclined-plane.
6. as the encapsulating structure of claim the 1 described image sensing chip, it is characterized in that: the sensing area of this image sensing chip is positioned at the center of top of image sensing chip, and described chip pad is distributed in the periphery of this sensing area.
7. as the encapsulating structure of claim the 6 described image sensing chips, it is characterized in that: the conducting strip of this lead frame is divided into two groups, these two groups of conducting strips are parallel to each other, are symmetricly set in the image sensing chip both sides, and the conducting strip in each group is parallel to each other and is spaced.
8. as the encapsulating structure of claim the 1 described image sensing chip, it is characterized in that: this light-passing board is a transparent glass, and it further is fixed on the matrix by viscose.
9. as the encapsulating structure of claim the 5 described image sensing chips, it is characterized in that: it is leaded that this viscose coats institute, and on the inclined-plane of the 3rd plate of covering lead frame and matrix.
CNB2005100360347A 2005-07-15 2005-07-15 Image sensed-measuring chip packing structure Active CN100517738C (en)

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CNB2005100360347A CN100517738C (en) 2005-07-15 2005-07-15 Image sensed-measuring chip packing structure
US11/448,570 US7554184B2 (en) 2005-07-15 2006-06-07 Image sensor chip package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2005100360347A CN100517738C (en) 2005-07-15 2005-07-15 Image sensed-measuring chip packing structure

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CN100517738C true CN100517738C (en) 2009-07-22

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US7554184B2 (en) 2009-06-30
US20070023608A1 (en) 2007-02-01
CN1897288A (en) 2007-01-17

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