CN2517112Y - 大功率发光二极管 - Google Patents

大功率发光二极管 Download PDF

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Publication number
CN2517112Y
CN2517112Y CN02203989U CN02203989U CN2517112Y CN 2517112 Y CN2517112 Y CN 2517112Y CN 02203989 U CN02203989 U CN 02203989U CN 02203989 U CN02203989 U CN 02203989U CN 2517112 Y CN2517112 Y CN 2517112Y
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metallic matrix
chip
emitting diodes
power light
light
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Expired - Lifetime
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CN02203989U
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葛世潮
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Zhejiang Manelux Lighting Co Ltd
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葛世潮
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Priority to CN02203989U priority Critical patent/CN2517112Y/zh
Application granted granted Critical
Publication of CN2517112Y publication Critical patent/CN2517112Y/zh
Priority to AU2002367196A priority patent/AU2002367196A1/en
Priority to KR1020047010358A priority patent/KR100991830B1/ko
Priority to KR1020097019925A priority patent/KR20090115810A/ko
Priority to KR1020097019924A priority patent/KR100991829B1/ko
Priority to EP02790249A priority patent/EP1467414A4/en
Priority to KR1020097019923A priority patent/KR100991827B1/ko
Priority to US10/500,315 priority patent/US7497596B2/en
Priority to JP2003557050A priority patent/JP2005513815A/ja
Priority to PCT/CN2002/000930 priority patent/WO2003056636A1/zh
Priority to CNB028261275A priority patent/CN100373638C/zh
Priority to US11/430,914 priority patent/US7347589B2/en
Priority to US12/265,911 priority patent/US7736027B2/en
Priority to JP2009241101A priority patent/JP2010050473A/ja
Priority to JP2009241098A priority patent/JP2010050472A/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body

Abstract

一种大功率发光二极管,它包括一个带有至少一个反射碗、至少一个固定螺丝的金属基体,反射碗内安装有至少一个发光二极管芯片,芯片的电极经金属基体或和与所述金属基体绝缘的导体引出,芯片周围和反射碗上有透光介质,其顶面和反射碗的形状按输出光束结构的要求设计。所述金属基体可用其螺丝固定在散热装置上,其间可有导热胶或绝缘导热层,以利散热。从而可制成大功率、高效率、长寿命的发光二极管,用于照明、交通灯、汽车灯、飞机舱顶灯和信息显示等。

Description

大功率发光二极管
                         技术领域
本发明涉及一种大功率发光二极管,用于照明、交通灯、汽车灯、飞机舱顶灯和信息显示等。
                         背景技术
现有技术的发光二极管的芯片均被安装于一个口径小于2mm的反射碗内或金属片上,所述反射碗和金属片与一细薄的金属引线相连,芯片和反射碗周围有环氧树脂等介质包围。由于发光二极管的输入功率约有80%以上的功率将转变成热能,而发光二极管的发光效率几乎随芯片温度的上升而直线下降,当输入功率升高时,现有技术的发光二极管不能有效地散热,芯片的温度将明显上升,导致发光效率和寿命明显下降,因而难于制成高效率、长寿命的大功率发光二极管。
                         发明内容
本实用新型的目的在于克服上述存在的不足,而提供一种可制成高效率、长寿命的大功率发光二极管。
本实用新型的目的是通过如下技术方案来实现的。它包括一个带有至少一个反射碗的金属基体,反射碗内装有至少一个发光二极管芯片,所述芯片的正负电极经金属基体或引线和与金属基体绝缘的导体引出,芯片周围和反射碗上为透光介质。
所述的金属基体上还至少带有一个固定螺丝,该金属基体通过螺丝固定在散热器或有散热功能的基板或灯罩构成的散热装置上。
所述的金属基体及螺丝与散热装置之间设置有绝缘导热胶或绝缘导热层。
所述的与金属基体绝缘的导体位于金属基体的周围,或位于金属基体反射碗周围的通孔内。
所述的金属基体由铜、铝、合金等高热导率金属制成,所述反射碗表面制有如银、铝、合金等高反射层,其形状为抛物面、椭球面或按输出光束结构要求设计的其它曲面。
所述的金属基体与导体之间有绝缘层,所述绝缘层可为塑料、陶瓷或电路板。
所述反射碗的形状为抛物面、椭球面或其它曲面。
所述透明介质为环氧树脂及光学胶等,为透明的、有色的或散射的。
所述至少一个发光二极管芯片,可以是相同发光色或不同发光色的,它们的电极可按需要分别引出、或相互串联、并联或串并联,以得到不同色或色温的光输出,用于照明或信息显示。
本实用新型的大功率发光二极管与现有发光二极管相比,具有功率大、发光效率高、寿命长等优点。可用于照明、交通灯、汽车灯、飞机舱顶灯或信息显示等。
                        附图说明
图1为本实用新型的大功率发光二极管的实施例的结构示意图。
图2为本实用新型的大功率发光二极管的又一实施例的结构示意图。
图3为本实用新型的大功率发光二极管的又一实施例的结构示意图。
                      具体实施方式
下面将结合附图对本实用新型作详细介绍:图1所示为本实用新型的大功率发光二极管的一个实施例的结构示意图。图1中有带有至少一个反射碗2的金属基体1,所述金属基体1还带有至少一个螺丝3,用于将发光二极管固定在散热器或有散热功能的基板或灯罩等构成的散热装置4上,金属基体1及螺丝3与散热装置4之间可有导热胶或绝缘导热层5,以减小热阻。所述金属基体1为高热导率的金属,例如铜、铝、合金等。所述反射碗2的形状可为抛物面、椭球面或其它形状的曲面,例如当用于汽车灯时其反射面可按输出光束结构的要求设计;其表面制有高反射率层,例如银、铝、合金等。
反射碗2内安装有至少一个发光二极管芯片6,若芯片的正负极分别从芯片的顶面和底面引出,底面的电极直接由金属基体1引出,顶面电极则经引线7、导体8、9引出,导体8与金属基体1之间有绝缘层10。若芯片6的正负极都从芯片的顶面引出,则一个电极经引线7、8、9引出,另一电极可经引线11与金属基体1相连,也可与引线7相似,经引线12及另一导体13、14引出,导体13与金属基体之间也有绝缘层10,所述绝缘层10可为塑料、陶瓷或电路板。芯片6周围为透光介质15,例如环氧树脂及光学胶等,所述光学介质15可为透明的、有色的或散射的,它的顶面16可按输出光分布的要求设计成一定的曲面,例如一个球面、椭球面或平面。当所述芯片6有多个时,它们可按需要分别引出、或相互串联、并联或串并联。所述多个芯片6可以是相同发光色或不同发光色的以得到不同色或不同色温的光输出。为了得到白光或其它发光色的光,在芯片6的周围也可有光转换材料17,它可吸收芯片6所发的光,发出所需色的光。引出线9和14也可以有二个或更多,用于控制不同芯片的发光。为了使引出线9、14等有足够的机械强度,导体8、13外可另有一绝缘层18,例如环氧树脂、塑料或陶瓷等,当18为环氧树脂时,它也可与透光介质15同时一次灌注成型。
图2为本实用新型的大功率发光二极管的又一实施例的结构示意图。图2中所示为有多个发光二极管芯片6的例子,其电极可经过反射碗2壁上的通孔19内的导线20引出,所述引线20与金属基体1之间有绝缘层21。与图1所示引线9、14相似,所述引线20也可按需要有多个。图2中所示通孔19为与反射碗轴垂直的,它也可以是其它方向,例如与反射碗轴平行或斜向的,如图2中22所示。图2中其它数字所代表的意义与图1相同。
图3为本实用新型的大功率发光二极管的又一实施例的结构示意图。图3中各数字所代表的意义与图1相同。其特征在于所述引出线9为至少一个针状引出线,它与金属基体1和散热装置4绝缘。

Claims (8)

1、一种大功率发光二极管,它包括一个带有至少一个反射碗的金属基体,反射碗内安装有至少一个发光二极管芯片,其特征在于所述芯片(6)的正负电极经金属基体(1)或引线(7、11、12)和与金属基体(1)绝缘的导体(8、9、13、20、22)引出,芯片(6)周围和反射碗(2)上为透光介质(15)。
2、如权利要求1所述的大功率发光二极管,其特征在于所述的金属基体(1)上还至少带有一个固定螺丝(3),该金属基体通过螺丝(3)固定在散热器或有散热功能的基板或灯罩构成的散热装置(4)上。
3、如权利要求2所述的大功率发光二极管,其特征在于所述的金属基体(1)及螺丝(3)与散热装置(4)之间设置有绝缘导热胶或绝缘导热层(5)
4、如权利要求1或2或3所述的大功率发光二极管,其特征在于所述与金属基体(1)绝缘的导体(8、13)位于金属基体(1)的周围,或位于金属基体反射碗(2)周围的通孔(19)内。
5、如权利要求5所述的大功率发光二极管,其特征在于所述的金属基体(1)由如铜、铝、合金等高热导率金属制成,所述反射碗(2)表面制有如银、铝、合金等高反射层,其形状为抛物面、椭球面或按输出光束结构要求设计的其它曲面。
6、如权利要求1所述的大功率发光二极管,其特征在于所述的金属基体(1)与导体(8、9、13、20、22)之间有绝缘层(10),所述绝缘层(10)可为塑料、陶瓷或电路板。
7、如权利要求1所述的大功率发光二极管,其特征在于所述的至少一个芯片(6)是相同发光色或不同发光色的,它们的电极可按需要分别引出、或相互串联、并联或串并联连接;所述芯片(6)周围还制有光转换材料层(17)。
8、如权利要求1所述的大功率发光二极管,其特征在于所述的透光介质(15)为环氧树脂或光学胶等,可以是透明、着色或散射的,它的顶面可为球面、椭球面、平面或按输出光分布的要求设计成其它形状的曲面。
CN02203989U 2001-12-29 2002-01-24 大功率发光二极管 Expired - Lifetime CN2517112Y (zh)

Priority Applications (15)

Application Number Priority Date Filing Date Title
CN02203989U CN2517112Y (zh) 2002-01-24 2002-01-24 大功率发光二极管
CNB028261275A CN100373638C (zh) 2001-12-29 2002-12-30 发光二极管及其发光二极管灯
US10/500,315 US7497596B2 (en) 2001-12-29 2002-12-30 LED and LED lamp
JP2003557050A JP2005513815A (ja) 2001-12-29 2002-12-30 発光ダイオード及び発光ダイオード・ランプ
KR1020097019925A KR20090115810A (ko) 2001-12-29 2002-12-30 Led 및 led램프
KR1020097019924A KR100991829B1 (ko) 2001-12-29 2002-12-30 Led 및 led램프
EP02790249A EP1467414A4 (en) 2001-12-29 2002-12-30 LED AND LED LAMP
KR1020097019923A KR100991827B1 (ko) 2001-12-29 2002-12-30 Led 및 led램프
AU2002367196A AU2002367196A1 (en) 2001-12-29 2002-12-30 A led and led lamp
KR1020047010358A KR100991830B1 (ko) 2001-12-29 2002-12-30 Led 및 led램프
PCT/CN2002/000930 WO2003056636A1 (en) 2001-12-29 2002-12-30 A led and led lamp
US11/430,914 US7347589B2 (en) 2001-12-29 2006-05-10 LED and LED lamp
US12/265,911 US7736027B2 (en) 2001-12-29 2008-11-06 LED and LED lamp
JP2009241101A JP2010050473A (ja) 2001-12-29 2009-10-20 発光ダイオード平面光源
JP2009241098A JP2010050472A (ja) 2001-12-29 2009-10-20 発光ダイオード・ランプ及び発光ダイオード交通灯

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN02203989U CN2517112Y (zh) 2002-01-24 2002-01-24 大功率发光二极管

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008043264A1 (en) * 2006-09-28 2008-04-17 Industrial Technology Research Institute Light-emitting component package, light-emitting component packaging apparatus, and light source device
CN100397666C (zh) * 2004-10-04 2008-06-25 丰田合成株式会社 发光二极管灯
CN1721762B (zh) * 2004-07-16 2010-06-09 奥斯兰姆施尔凡尼亚公司 灯组件
CN101295684B (zh) * 2007-04-25 2010-06-09 财团法人工业技术研究院 发热元件的散热封装
CN101807658A (zh) * 2010-03-25 2010-08-18 福建中科万邦光电股份有限公司 一种大功率led封装方法
US7816698B2 (en) 2007-04-13 2010-10-19 Industrial Technology Research Institute Heat dissipation package for heat generation element
WO2013020330A1 (zh) * 2011-08-09 2013-02-14 深圳市瑞丰光电子股份有限公司 一种led模组及照明装置
CN103241166A (zh) * 2013-04-28 2013-08-14 南宁桂格精工科技有限公司 设置于后视镜内的led侧转向灯
CN106784250A (zh) * 2017-01-05 2017-05-31 芜湖聚飞光电科技有限公司 一种发光角度可控的芯片级led封装器件及封装工艺

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1721762B (zh) * 2004-07-16 2010-06-09 奥斯兰姆施尔凡尼亚公司 灯组件
CN100397666C (zh) * 2004-10-04 2008-06-25 丰田合成株式会社 发光二极管灯
WO2008043264A1 (en) * 2006-09-28 2008-04-17 Industrial Technology Research Institute Light-emitting component package, light-emitting component packaging apparatus, and light source device
US7816698B2 (en) 2007-04-13 2010-10-19 Industrial Technology Research Institute Heat dissipation package for heat generation element
CN101295684B (zh) * 2007-04-25 2010-06-09 财团法人工业技术研究院 发热元件的散热封装
CN101807658A (zh) * 2010-03-25 2010-08-18 福建中科万邦光电股份有限公司 一种大功率led封装方法
CN101807658B (zh) * 2010-03-25 2012-11-21 福建中科万邦光电股份有限公司 一种大功率led封装方法
WO2013020330A1 (zh) * 2011-08-09 2013-02-14 深圳市瑞丰光电子股份有限公司 一种led模组及照明装置
CN103241166A (zh) * 2013-04-28 2013-08-14 南宁桂格精工科技有限公司 设置于后视镜内的led侧转向灯
CN106784250A (zh) * 2017-01-05 2017-05-31 芜湖聚飞光电科技有限公司 一种发光角度可控的芯片级led封装器件及封装工艺

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