CN2239078Y - Solid discharge diode - Google Patents
Solid discharge diode Download PDFInfo
- Publication number
- CN2239078Y CN2239078Y CN 95239666 CN95239666U CN2239078Y CN 2239078 Y CN2239078 Y CN 2239078Y CN 95239666 CN95239666 CN 95239666 CN 95239666 U CN95239666 U CN 95239666U CN 2239078 Y CN2239078 Y CN 2239078Y
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- CN
- China
- Prior art keywords
- solid discharge
- districts
- electrodes
- diodes
- substrate
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Abstract
The utility model relates to a solid discharge audion for a protector avoiding lightning surge destroying electronic equipment and devices, comprising two solid discharge diodes which are made on a same backing, wherein, two electrodes on one side of the backing are connected to be a grounding electrode, and two electrodes on the other side are respectively led out; each diode comprises a boron diffusion zone and a phosphorus diffusion zone which are made by both sides of an n-shaped silicon backing, the two phosphorus diffusion zones are arranged at both sides of the two boron diffusion zones, the phosphorus diffusion zones are provided with regularly distributed short dots, and the whole device forms an axisymmetric structure of 180 DEG rotation. The utility model has the advantages of simple structure and processing, low cost, high rate of finished products, etc.
Description
The utility model is a kind of current mode silicon device of surge protector, belongs to semiconductor die brake tube technical field.
Solid discharging tube is the protection device that is used as communication equipment, data conveyer and semiconductor integrated circuit etc. at present.Existing solid discharging tube adopts mesa structure usually or adopts pressure limiting ring, equipotential ring structure.The mesa structure device adopts process meanses such as glassivation because of needs, so the technology more complicated; The circulus device is unfavorable for improving rate of finished products because of complex structure.Occasion for realizing that two-wire is protected over the ground can't extremely realize by a solid discharging tube two.
The purpose of this utility model is at the deficiencies in the prior art; a kind of simple in structure, solid discharging tube that manufacture craft is easy is provided; it can realize the function of two-wire protection over the ground, has that production cost is low, the rate of finished products advantages of higher, is convenient to domestic promoting the use of.
The utility model adopts two two-way two end silicon Darlistor structures, can form by two solid discharge diodes, be characterized in that two solid discharge diodes are produced on the same chip semiconductor silicon substrate, it between two solid discharge diodes Rotate 180 ° axial symmetry, two solid discharge diodes link and constitute earth electrode in two telegrams of substrate one side, two electrodes of another side are drawn respectively, thereby constitute solid discharge triode.In order to guarantee the characteristic unanimity of two solid discharge diodes, two graphic designs are identical, and constitute Rotate 180 ° axially symmetric structure.Each solid discharge diode all can be made of n type silicon substrate, two boron diffusion districts and two phosphorous diffusion districts; Two boron diffusion districts are positioned at the tow sides of substrate, and two phosphorous diffusion districts are positioned at the both sides in two boron diffusion districts, and equally distributed circular short dot is all arranged in two phosphorous diffusion districts, and device constitutes Rotate 180 ° axially symmetric structure.The home position of circular short dot can be positive angular distribution, also can be square profile.In order to solve the homogeneity question of start trigger electric current, both sides of the edge, phosphorous diffusion district are semicircular structure with respect to short dot.
The utility model compared with prior art has that structure and technology are simple, cost is low and the rate of finished products advantages of higher, and it does not need to adopt potential dividing ring, by ring and technology for passivating glass.Compare with gas discharge tube; have that response is fast, electric leakage is little, insulation resistance big, stable performance, advantage such as current capacity is big and the life-span is long; can be used for thunderbolt, eletric power induction and power line are touched and the protection of possible damage equipment; the lightning protection surge protection of for example various communication equipments (electron exchanger, programme-controlled exchange, facsimile machine, radio set etc.), data conveyer; the AC line of telecommunication circuit is mixed and is touched protection, and the protection of various integrated circuit (IC) and very lagre scale integrated circuit (VLSIC) semiconductor device such as (LSI).Only just can realize the function that two-wire is protected over the ground with a solid discharge triode.
Fig. 1 is a structural representation of the present utility model; Fig. 2 is the planar structure schematic diagram of embodiment; Fig. 3 is current-voltage (I-V) performance diagram of device.
The utility model can adopt scheme shown in the drawings to realize.As shown in Figure 1, two solid discharging tube diodes are n
1, p
2, n
3, p
4, n
5And n '
1, p '
2, n '
3, p '
4, n '
5Five-layer structure, T
1And T '
1Be associated in together by gold (Au) electrode, form grounding electrode; T
2And T '
2As two extraction electrodes, can adopt aluminium (Al) electrode.The size and the quantity of the circular short dot (1) among Fig. 2 can be according to keeping electric current I
HRequire to decide with the numerical value of voltage change ratio dv/dt, (2) are the semicircular edge in phosphorous diffusion district, and (3) are the boron diffusion district, (4) be n type silicon substrate, A-A ' is the profile position of Fig. 1 a, and B-B ' is the profile position of Fig. 1 b, and Y-Y ' is for rotating 180 ° of symmetry axis.(5) among Fig. 1 a are interior electrode, and (6) are SiO
2I among Fig. 3
HFor keeping electric current, V
BOBe breakover voltage, V
BRBe puncture voltage.According to V
BRRequirement, can select appropriate electrical resistance rate crystal orientation for use is substrate n for the n type silicon chip of (111)
3(n '
3), after twin polishing, the oxidation, adopt the dual surface lithography technology to carve two-sided boron diffusion district, adopt the diffusion of crystallite boron diffusion source and form two-sided boron diffusion district p
2, p '
2, and p
4, p '
4, carve the phosphorous diffusion district again, with phosphorus oxychloride (POCl
3) liquid source diffuses to form n
1, n '
1And n
5, n '
5Two-sided phosphorous diffusion district.Substrate also can adopt P type silicon chip, and this moment, boron, phosphorus district were opposite with n type substrate, and promptly two boron-doping districts are positioned at two both sides of mixing the phosphorus district.For the tube core of making, need by after carving fairlead, double-sided metalization again, the available gold of one side (Au) connects and constitutes earth electrode T
1, another side uses aluminium (Al) as extraction pole T
2And T '
2Encapsulation can be adopted two-sided plastic packaging technology, and the Au electrode is freezed on base with terne metal, and recycle silicon aluminium wire ultrasonic bonding makes the aluminium electrode be connected with pin, then plastic packaging.
Claims (4)
1. one kind is used to prevent that lightning surge from damaging the solid discharge triode of electronic equipment and device, form by two solid discharge diodes, it is characterized in that two solid discharge diodes are produced on the same chip semiconductor substrate, it between two diodes Rotate 180 ° axial symmetry, two electrodes of substrate one side formation earth electrode that links, two electrodes of another side are drawn respectively.
2. solid discharge triode according to claim 1, it is characterized in that each solid discharge diode constitutes by n type silicon substrate, two boron diffusion districts and two phosphorous diffusion districts, two boron diffusion districts are positioned at the tow sides of substrate, two phosphorous diffusion districts are positioned at the both sides in two boron diffusion districts, equally distributed circular short dot is all arranged in two phosphorous diffusion districts, and device constitutes Rotate 180 ° axially symmetric structure.
3. solid discharge triode according to claim 1 and 2 is characterized in that the home position of circular short dot is the equilateral triangle distribution.
4. solid discharge triode according to claim 1 and 2 is characterized in that the relative short dot of phosphorous diffusion area edge is a semicircular structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95239666 CN2239078Y (en) | 1995-04-28 | 1995-04-28 | Solid discharge diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95239666 CN2239078Y (en) | 1995-04-28 | 1995-04-28 | Solid discharge diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2239078Y true CN2239078Y (en) | 1996-10-30 |
Family
ID=33881400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95239666 Expired - Fee Related CN2239078Y (en) | 1995-04-28 | 1995-04-28 | Solid discharge diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2239078Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569420A (en) * | 2012-01-06 | 2012-07-11 | 重庆邮电大学 | Distributed multiple cell integrated semiconductor discharge tube and producing method thereof |
| CN102969246A (en) * | 2012-12-17 | 2013-03-13 | 福建福顺微电子有限公司 | Planar thyristor manufacturing method |
| CN104465739A (en) * | 2014-12-18 | 2015-03-25 | 常熟市聚芯半导体科技有限公司 | Discharge tube |
-
1995
- 1995-04-28 CN CN 95239666 patent/CN2239078Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569420A (en) * | 2012-01-06 | 2012-07-11 | 重庆邮电大学 | Distributed multiple cell integrated semiconductor discharge tube and producing method thereof |
| CN102569420B (en) * | 2012-01-06 | 2014-10-15 | 重庆邮电大学 | Distributed multiple cell integrated semiconductor discharge tube and producing method thereof |
| CN102969246A (en) * | 2012-12-17 | 2013-03-13 | 福建福顺微电子有限公司 | Planar thyristor manufacturing method |
| CN102969246B (en) * | 2012-12-17 | 2015-04-29 | 福建福顺微电子有限公司 | Planar thyristor manufacturing method |
| CN104465739A (en) * | 2014-12-18 | 2015-03-25 | 常熟市聚芯半导体科技有限公司 | Discharge tube |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |