CN2181754Y - Plane type surge-proof silicon device - Google Patents

Abstract

The utility model relates to a plane type surge-proof silicon device, an input protection device for electronic equipment as radar, program control exchanger, etc. An N-shaped backing silicon is provided with a P-shaped diffusion zone, an N+ diffusion zone is arranged in the P zone, a P+ cutoff ring is arranged at the edge of the P zone, a P-shaped voltage dividing ring is arranged at the periphery, the N+ zone is provided with regularly tactic short dots, and the cutoff ring and the voltage dividing ring are provided with oxidizing layers. The inner lead can use magnetron sputtering Ni-Su alloy, and the utility model can be manufactured by silicon plane technique, not needing glass passivation. The utility model has the advantages of simple processing, low cost, long service life, etc.

Description

Plane type surge-proof silicon device

The utility model is a kind of silicon planar device that is used for anti-surge on the electronic equipments such as radar, stored-program control exchange, belongs to semiconductor planar type device technology field.

The anti-surge device that uses on the equipment such as at present domestic and international stored-program control exchange adopts ceramic discharge tube usually.This device exists the changing voltage excursion big, and homogeneity of product is poor; It is big ignition resistance, and power consumption is big; The high frequency magnetic field interference signal appears in ionic discharge when catching fire, and influences the machine operate as normal; Problems such as the cycle that device is changed is short.The external silicon anti-surge device system that produces adopts mesa structure, needs to adopt process meanses such as glassivation and vertical deep trench isolation, and domestic general producer these technologies of very difficult application are so be difficult to generally realize.

The purpose of this utility model pin is the deficiencies in the prior art, and a kind of plane silicon anti-surge device that is applicable to equipment such as stored-program control exchange is provided, and it can adopt conventional silicon planner technology to realize, helps generally applying.

The utility model is by N type silicon substrate, p type diffusion region, N ⁺Type diffusion region and metal electrode constitute, and its characteristics are that the positive and negative of N type silicon substrate has the p type diffusion region of symmetry, two N that p type diffusion region is interior ⁺The type diffusion region is rotates 180 ° of symmetrical distributions, and the P area edge is provided with P ⁺By ring, P ⁺By outer P type potential dividing ring, the N of being provided with of ring ⁺The short dot of regular arrangement in the district is at P ⁺Be provided with oxide layer (SIO by ring and P type potential dividing ring surface ₂).For the reliability that improves device with help saving noble metal, lead can adopt magnetron sputtering Ni-Sn alloy, and does not adopt Au, and its solderability is better than Au.The utility model is similar to the thyristor of a no gate pole.By the design of negative electrode short dot, when the breakover current that can obtain hundreds of milliamperes of forwards was used, it was in parallel with protected system, and when overvoltage or overcurrent passed through Circuits System, the anti-surge break-over of device was equivalent to short circuit, so protected Circuits System.Because overvoltage or overcurrent are commonly referred to as surge voltage or surge current, so this device is called as the anti-surge device.

The utility model compared with prior art; it can avoid the existing shortcoming of ceramic discharge tube; can all adopt ripe silicon planner technology manufacturing technology; remove glassivation technology from; have that technology is easy, rate of finished products is high, cost is low and advantage such as long service life; can be one with over-voltage over-current protection, leakage current be little under the normal condition, can be used as the input protection device of electronic equipments such as radar, stored-program control exchange.

Fig. 1 is the front schematic view of the utility model example structure; Fig. 2 is the generalized section of Fig. 1.

The utility model can take scheme shown in the drawings to realize.Fig. 1 is for removing the structural representation of surface metal electrode and oxide layer, and Fig. 2 is a generalized section.The thickness of N type silicon substrate (1) can be 3300～3500 μ m; P type potential dividing ring (2) and P ⁺Width by ring (3) can be for example 200 μ m of 100～250 μ m(), between the two apart from determining according to requirement of withstand voltage; N ⁺The diameter of the short dot (5) in the district (4) can be for example 80 μ m of 60～100 μ m(), the short dot spacing can be for example 120 μ m of 80～150 μ m(); Oxide layer (SiO ₂) thickness of (6) can be for example 1 μ m of 1～2 μ m(); The thickness of metal level (7) can be for example 2 μ m of 1～3 μ m(); The big I of area in each district is determined according to relevant requirements such as electric currents.

Claims (2)

1, a kind of plane silicon anti-surge device that is used on the electronic equipments such as radar, stored-program control exchange is by N type silicon substrate, p type diffusion region, N ⁺Type diffusion region and metal electrode constitute, and it is characterized in that the positive and negative of N type silicon substrate has symmetrical p type diffusion region, two N that p type diffusion region is interior ⁺The type diffusion region is rotates 180 ° of symmetrical distributions, and the P area edge is provided with P ⁺By ring, P ⁺By outer P type potential dividing ring, the N of being provided with of ring ⁺The short dot of regular arrangement in the district is at P ⁺Be provided with oxide layer by ring and P type potential dividing ring surface.

2, plane silicon anti-surge device according to claim 1 is characterized in that lead adopts magnetron sputtering Ni-Sn alloy.

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