CN2235663Y

CN2235663Y - Device and elements for overvoltage arrester

Info

Publication number: CN2235663Y
Application number: CN 95216340
Authority: CN
Inventors: 杜长景
Original assignee: Individual
Current assignee: Individual
Priority date: 1995-07-20
Filing date: 1995-07-20
Publication date: 1996-09-18
Anticipated expiration: 2005-07-20

Abstract

The utility model relates to a solid device and elements for spark-gap discharge. A semiconductor core grain with a surface layer of refractory metal oxide is arranged between upper and lower electrodes which are sealed in a glass pipe, and space for sealing inert gas is arranged between the glass pipe and the core grain. The utility model has the advantages of small size being only from 1/10 to 1/12 of the prior product, low cost being only 1/10 of the prior product and better electrical parameter index especially the working pressure precision and the symmetry than products of the same class.

Description

A kind of electricity discharges device

The utility model belongs to solid state device, relates to a kind of solid state device by the gap discharge.

Electricity discharges device or claims that discharge tube is that the broad-spectrum antistatic that grew up in recent years disturbs and remove the device that electric surge disturbs and spike is disturbed, be applied in computer widely, in the equipment such as communication apparatus and radio and television, the electrical quantity of such device mainly is to be that the thickness of insulating barrier is determined by the gap between the sparking electrode, usually require about 30 μ m, because the means with machining can not be processed into insulating barrier thickness like this, therefore can only take to increase the comparative electrode area reduces thickness of insulating layer with equivalence way, improve the parameter index of electric releasing tube, the pagoda type structure has been represented the current level of this device, and it is with AL with regard to its tube core ₂O ₃Be machined into " Gui " shape insulated ceramic core, be coated with the semimetal conductive layer on each layer porcelain platform two surfaces, each conductive layer joins with respective electrode and lead-in wire respectively, and its weak point is that volume is big, manufacturing cost is high, and the electrical quantity precision is low, and symmetry is relatively poor.

The purpose of this utility model provides that a kind of volume is little, and processing cost is low, electrical quantity degree height, and the electricity that symmetry is good discharges device, to remedy the deficiencies in the prior art.

Above-mentioned purpose is obtained by following technical scheme:

Be encapsulated in and clamp semiconductor core grain between the upper/lower electrode in the glass tube, be provided with the space of sealing inert gas between glass tube and the core grain with refractory metal oxide top layer.

Surface recombination has metal conducting layer on the refractory metal oxide top layer;

Upper/lower electrode is fixedlyed connected with paster;

Glass tube one end coated has the ring-type colour code.

Further specify the technical program with drawings and Examples below:

One of accompanying drawing 1 embodiment structural profile schematic diagram

The two structural profile schematic diagrames of accompanying drawing 2 embodiment

Accompanying drawing 3 SMD encapsulating structure schematic diagrames

Description of drawings: 1 top electrode lead-in wire, 2 top electrodes, 3 metal conducting layers, 4 refractory metal oxides, 5 substrates, 6 spaces, 7 glass tubes, 8 bottom electrodes, 9 bottom electrodes lead-in wire, 10 pasters, 11 colour codes.

Basic structure of the present utility model as shown in Figure 1, its semiconductor core grain is that routinely physical deposition method will contain MoO ₂TiO ₂Or SiO ₂Be splashed to n type single crystal silicon substrate 5 surfaces, formation thickness is insoluble metal oxide 4 top layers about 30 μ m, through being partitioned into the semiconductor core grain of the length of side 400 μ m, adopt mould transformation approach technology, in the graphite template with glass tube 7, bottom electrode 8 and go between 9, by the

core grain

4,5 that substrate 5, refractory metal vapour 4 are formed, top electrode 2 and go between 1 successively assembling finish, in the sealing sintering furnace after the vacuum treatment, fill with argon gas, neon or krypton gas, heat-agglomerating gets final product glass tube port sealing by fusing.Glass tube of the present utility model, electrode and axial lead all adopt DO-34, DO-35 or DO-41 international standard.

The embodiment of Fig. 2 two with one of difference be, by aforementioned technology metal M o being sputtered at the metal oxide top layer on the semiconductor core grain is surface of insulating layer, form metal conducting layer 3, to improve the reliability that contacts between top electrode and the metal oxide layer, thereby the operating voltage symmetry of this device is improved greatly, can reach≤10, be better than international like product level.

Fig. 3 shows the profile of the utility model microminiature paster 10 formulas encapsulation, and suitable Subminiature electronic product uses, and glass tube adopts φ 1.74 * 2.0 international standards.

Operation principle of the present utility model is identical with existing electricity release device, but owing to adopt the structure that is fit to device processing method, therefore have the following advantages: volume is little, and is in light weight, only is ten one-two 1/10th of same specification existing product; Low cost of manufacture only is 1/10th of an existing product, and electrical quantity index particularly operating voltage precision and symmetry all is better than existing like product.

Claims

1, a kind of electricity discharges device, formed by upper and lower electrode, lead-in wire, glass tube, it is characterized in that: be encapsulated in and clamp semiconductor core grain between the upper and lower electrode in the glass tube, be provided with the space of sealing inert gas between glass tube and the core grain with refractory metal oxide top layer.

2, electricity as claimed in claim 1 discharges device, it is characterized in that: be compounded with metal conducting layer on the refractory metal oxide top layer.

3, electricity as claimed in claim 1 discharges device, and it is characterized in that: upper and lower electrode is fixedlyed connected with paster respectively.