CN108666372A - A kind of special more PN junction transient voltage suppressor diodes of arrester - Google Patents
A kind of special more PN junction transient voltage suppressor diodes of arrester Download PDFInfo
- Publication number
- CN108666372A CN108666372A CN201710189648.1A CN201710189648A CN108666372A CN 108666372 A CN108666372 A CN 108666372A CN 201710189648 A CN201710189648 A CN 201710189648A CN 108666372 A CN108666372 A CN 108666372A
- Authority
- CN
- China
- Prior art keywords
- arrester
- transient voltage
- voltage suppressor
- special
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001052 transient effect Effects 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 239000012212 insulator Substances 0.000 claims description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thermistors And Varistors (AREA)
Abstract
The present invention provides a kind of special more PN junction transient voltage suppressor diodes of arrester, it is characterised in that：The upper surface for justifying silicon chip in N-type makes a silicon dioxide insulating layer, multiple round photoetching windows are made on silicon dioxide insulating layer, multiple p type island regions are diffused out by multiple round photoetching windows, form multiple PN junctions, the upper truncated cone-shaped positive electrode of pressure at multiple round photoetching windows, in N-type circle silicon chip lower part upper one cylindrical negative electrode of pressure, an insulation crust is encapsulated between truncated cone-shaped positive electrode and cylindrical negative electrode, that is, constitutes the special more PN junction transient voltage suppressor diodes of arrester.The problem of it is smaller to solve general transient voltage suppressor diode breakdown current, electric power line arrester big discharge capacity demand cannot be met.Have many advantages, such as that breakdown current is larger, is suitble to make electric power line arrester.
Description
Technical field
The present invention relates to a kind of diode, specifically a kind of special more PN junction transient voltages of arrester inhibit two poles
Pipe.
Background technology
Currently, although existing transient voltage suppressor diode all has non-linear voltage characteristic on the market, because reversed
Breakdown current is smaller, cannot meet the needs of electric power line arrester big discharge capacity, thus is only applicable to transient voltage inhibition
With the overvoltage protection of partial circuit, it is impossible to be used in the overvoltage protection of power circuit and lightning protection are lightning-arrest.
Invention content
The purpose of the present invention is to provide a kind of special more PN junction transient voltage suppressor diodes of arrester, can solve one
As the smaller problem of transient voltage suppressor diode reverse breakdown current, have reverse breakdown current larger, be suitble to make electricity
The advantages that power leakage conductor.
The present invention includes that N-type is justifying silicon chip, silicon dioxide insulating layer, round photoetching window, p type island region, PN junction, truncated cone-shaped just
Electrode, cylindrical negative electrode and insulation crust, used technical solution are：The upper surface for justifying silicon chip in N-type makes one
Silicon dioxide insulating layer makes multiple round photoetching windows on silicon dioxide insulating layer, is expanded by multiple round photoetching windows
Shed multiple p type island regions, forms multiple PN junctions, and the upper truncated cone-shaped positive electrode of pressure at multiple round photoetching windows justifies silicon in N-type
The cylindrical negative electrode of upper one of chip lower part pressure, one insulation of encapsulation is outer between truncated cone-shaped positive electrode and cylindrical negative electrode
Shell constitutes the special more PN junction transient voltage suppressor diodes of arrester.
The beneficial effects of the present invention are：The configuration of Pass through above-mentioned technical proposal constitutes a kind of special more PN of arrester
Transient voltage suppressor diode is tied, not only the PN junction with multiple parallel connections, can form larger reverse breakdown current, also because of setting
Truncated cone-shaped positive electrode and cylindrical negative electrode, make its when assemble arrester can easily multi-disc stack, raising operating voltage,
Can not only meet the needs of general electric power line arrester big discharge capacity, moreover it is possible to meet the high electricity of high-voltage electric power circuit arrester
Pressure, the demand of big discharge capacity.It is smaller to solve general transient voltage suppressor diode breakdown current, power line cannot be met
The problem of road arrester big discharge capacity demand.Have many advantages, such as that breakdown current is larger, is suitble to make electric power line arrester.
Description of the drawings
The invention will be further described with reference to the accompanying drawings and examples.
Fig. 1 is the structural diagram of the present invention.
Specific implementation mode
Shown in Fig. 1：The upper surface for justifying silicon chip 1 in N-type makes a silicon dioxide insulating layer 2, in silicon dioxide insulator
Multiple round photoetching windows 3 are made on layer 2, are diffused out a multiple p type island regions 4 by multiple round photoetching windows 3, are formed multiple
PN junction 5, the upper truncated cone-shaped positive electrode 6 of pressure at multiple round photoetching windows 3 press a upper circle in 1 lower part of N-type circle silicon chip
Cylindricality negative electrode 7 encapsulates an insulation crust 8 between truncated cone-shaped positive electrode 6 and cylindrical negative electrode 7, that is, constitutes lightning-arrest
The special more PN junction transient voltage suppressor diodes of device.
Claims (1)
1. a kind of special more PN junction transient voltage suppressor diodes of arrester, including N-type justify silicon chip（1）, silicon dioxide insulator
Layer（2）, round photoetching window（3）, p type island region（4）, PN junction（5）, truncated cone-shaped positive electrode（6）, cylindrical negative electrode（7）And insulation
Shell（8）, it is characterised in that：Justify silicon chip in N-type（1）Upper surface make a silicon dioxide insulating layer（2）, in titanium dioxide
Silicon insulating layer（2）It is upper to make multiple round photoetching windows（3）, pass through multiple round photoetching windows（3）Diffuse out multiple p type island regions
（4）, form multiple PN junctions（5）, in multiple round photoetching windows（3）Press a upper truncated cone-shaped positive electrode in place（6）, justify silicon in N-type
Chip（1）The cylindrical negative electrode of upper one of lower part pressure（7）, in truncated cone-shaped positive electrode（6）With cylindrical negative electrode（7）Between encapsulate
One insulation crust（8）, that is, constitute the special more PN junction transient voltage suppressor diodes of arrester.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710189648.1A CN108666372A (en) | 2017-03-27 | 2017-03-27 | A kind of special more PN junction transient voltage suppressor diodes of arrester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710189648.1A CN108666372A (en) | 2017-03-27 | 2017-03-27 | A kind of special more PN junction transient voltage suppressor diodes of arrester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108666372A true CN108666372A (en) | 2018-10-16 |
Family
ID=63786197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710189648.1A Pending CN108666372A (en) | 2017-03-27 | 2017-03-27 | A kind of special more PN junction transient voltage suppressor diodes of arrester |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108666372A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830450A (en) * | 2019-01-18 | 2019-05-31 | 重庆市妙格半导体研究院有限公司 | Etching device is used in a kind of processing of diode production |
-
2017
- 2017-03-27 CN CN201710189648.1A patent/CN108666372A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830450A (en) * | 2019-01-18 | 2019-05-31 | 重庆市妙格半导体研究院有限公司 | Etching device is used in a kind of processing of diode production |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181016 |
|
| WD01 | Invention patent application deemed withdrawn after publication |