CN101872789B - High-power high-current density rectifier diode chip and fabrication method thereof - Google Patents
High-power high-current density rectifier diode chip and fabrication method thereof Download PDFInfo
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- CN101872789B CN101872789B CN2010101851987A CN201010185198A CN101872789B CN 101872789 B CN101872789 B CN 101872789B CN 2010101851987 A CN2010101851987 A CN 2010101851987A CN 201010185198 A CN201010185198 A CN 201010185198A CN 101872789 B CN101872789 B CN 101872789B
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 71
- 239000011574 phosphorus Substances 0.000 claims abstract description 71
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 238000009792 diffusion process Methods 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052796 boron Inorganic materials 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 96
- 239000004816 latex Substances 0.000 claims description 49
- 229920000126 latex Polymers 0.000 claims description 49
- 235000012239 silicon dioxide Nutrition 0.000 claims description 48
- 239000000377 silicon dioxide Substances 0.000 claims description 48
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 24
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims description 24
- 238000004026 adhesive bonding Methods 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000428 dust Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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Abstract
The invention relates to a high-power high-current density rectifier diode chip and a fabrication method thereof, which belong to the technical field of semiconductor devices. The chip consists of a boron area, an N type area and a concentrated phosphorus area, the thickness of the boron area is 50Mum to 60Mum, the thickness of the concentrated phosphorus area is 10Mum to 12Mum, and the total thickness of the chip is 180Mum to 200Mum. The fabrication method first adopts a latex-phosphorus source diffusion method to diffuse phosphorus on both surfaces of a N type silicon wafer until the thickness of each concentrated phosphorus area is 10Mum to 12Mum, one of the concentrated phosphorus areas is then ground off, and boron is diffused on the surface ground of the concentrated phosphorus area until the thickness of the boron area is 50Mum to 60Mum. The concentration distribution of the chip prepared by the method can obstruct the expansion of a space charge region, reduce the thickness of the N area, decrease the tube voltage drop, reduce the thickness of the silicon wafer and greatly increase the current density (as high as 500A/cm2), consequently, raw materials are saved, and the space occupied by the diode in use is reduced.
Description
Technical field
The present invention relates to a kind of high-power high-current density rectifier diode chip and manufacture method thereof, belong to the semiconductor device processing technology field.
Background technology
The manufacture difficulty of high-power high-current density rectifier diode chip is very big, mainly is because require it to have very large current density, reaches 400A/cm
2More than, and the current density of common rectifier diode is generally 80～100A/cm
2, maximum is no more than 200A/cm
2In the prior art, the manufacture process of rectifier diode chip generally adopts and expands the technology that expands phosphorus behind the boron earlier, promptly at first expands boron on two surfaces of N type silicon chip, forms P
+The district, then that one of them is surperficial P
+The district grinds off, and is grinding off P at last
+Phosphorus is expanded on the surface in district, forms N
+The district.Because the degree of depth that expands the boron layer is generally at 100-200 μ m, therefore the original silicon chip thickness of selecting must be thicker, this just makes the tube voltage drop of the rectifier diode that is processed at last bigger, makes by the current density of rectifier diode chip just lessly, generally has only 80～100A/cm
2Because its tube voltage drop is big, current density is little, can only adopt bigger silicon area to guarantee to use electric current, this also makes the raw material amount of employing increase, and the ceramic shell overall volume of rectifier diode finished product also increases, cause in the use occupation space bigger, do not meet the principle of energy-saving and emission-reduction low-carbon (LC).
Summary of the invention
The objective of the invention is to propose a kind of high-power high-current density rectifier diode chip and manufacture method thereof, change the structure and the manufacture method thereof of existing rectifier diode chip, to improve the current density of rectifier diode, reduce chip volume, save product cost.
The high-power high-current density rectifier diode chip that the present invention proposes, form by boron district, N type district and dense phosphorus district, described boron district, N type district and dense phosphorus district are arranged in order, the thickness in wherein said boron district is 50-60 μ m, the thickness in described dense phosphorus district is 10-12 μ m, and the chip gross thickness is 180-200 μ m.
The manufacture method of the aforesaid high-power high-current density rectifier diode chip that the present invention proposes may further comprise the steps:
(1) adopt two the diffusion into the surface phosphorus of latex phosphorus source method of diffusion at N type silicon chip, making each dense phosphorus district thickness of formation is 10-12 μ m, and diffusion process is:
(1-1) add phosphorus pentoxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: phosphorus pentoxide=1: 0.1-0.5, make dissolving fully, and become phosphorus containing silicon dioxide latex source;
(1-2) above-mentioned phosphorus containing silicon dioxide latex source is coated on two surfaces of N type silicon chip, coating layer thickness is the 3000-4000 dust;
(1-3) the N type silicon chip behind the gluing is placed 100 ℃-200 ℃ toasted 5-10 minute down;
(1-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 1.5-2.5 hour down at 1200 ℃-1260 ℃;
(2) one in above-mentioned two dense phosphorus districts is ground off, at the diffusion into the surface boron that has ground off dense phosphorus district, the thickness that makes the boron district is 50-60 μ m, and diffusion process is:
(2-1) add diboron trioxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: diboron trioxide=1000: 20-30, make dissolving fully, and become boracic silicon dioxide latex source;
(2-2) above-mentioned boracic silicon dioxide dissolving source is coated on the surface that has ground off dense phosphorus district of N type silicon chip, coating layer thickness is the 6000-8000 dust;
(2-3) silicon chip behind the gluing is placed 100 ℃-200 ℃ toasted 5-10 minute down;
(2-4) silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 12-18 hour down at 1200 ℃-1260 ℃.
High-power high-current density rectifier diode chip and manufacture method thereof that the present invention proposes, its advantage is the chip that utilizes this method preparation to obtain, its CONCENTRATION DISTRIBUTION can stop the expansion of space charge region, attenuate N district thickness, play the effect that reduces tube voltage drop, and significantly reduced silicon wafer thickness, improved current density greatly (up to 500A/cm
2).By the rectifier diode that the inventive method is made, save raw material, reduced the in use shared space of diode, enlarged its scope of application, reached the requirement of energy-saving and emission-reduction low-carbon (LC)s.The high current density rectifier diode that the present invention proposes has changed the structure of existing rectifier diode, adopts and expands the technology that expands boron behind the phosphorus earlier, at the pre-deposition last layer phosphorus (N of silicon chip surface elder generation
+) layer (about 10-12 μ m), grind off one side N then
+Layer (about 10-12 μ m) spreads P again
+Layer (about 50-60 μ m) is simultaneously N
+Layer forward position advances and forms the buffering area that CONCENTRATION DISTRIBUTION is mild, stops the expansion of space charge region, and attenuate N district thickness plays the effect that reduces tube voltage drop, and significantly reduced silicon wafer thickness.
Description of drawings
Fig. 1 is the structural representation of the high-power high-current density rectifier diode chip of the inventive method preparation.
Fig. 2 is the thick and doping content distribution map of junction depth, sheet of the rectifier diode chip of the inventive method embodiment 2 preparations.
Among Fig. 1, the 1st, boron district, the 2nd, N type district, the 3rd, dense phosphorus district.
Embodiment
The high-power high-current density rectifier diode chip that the present invention proposes, its structure is made up of boron district 1, N type district 2 and dense phosphorus district 3 as shown in Figure 1.Boron district 1, N type district 2 and dense phosphorus district 3 are arranged in order, and wherein the thickness in boron district is 50-60 μ m, and the thickness in described dense phosphorus district is 10-12 μ m, and chip thickness is 180-200 μ m.
The manufacture method of the aforesaid high-power high-current density rectifier diode chip that the present invention proposes may further comprise the steps:
(1) adopt two the diffusion into the surface phosphorus of latex phosphorus source method of diffusion at N type silicon chip, making each dense phosphorus district thickness of formation is 10-12 μ m, and diffusion process is:
(1-1) add phosphorus pentoxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: phosphorus pentoxide=1: 0.1-0.5, make dissolving fully, and become phosphorus containing silicon dioxide latex source;
(1-2) above-mentioned phosphorus containing silicon dioxide latex source is coated on two surfaces of N type silicon chip, coating layer thickness is the 3000-4000 dust;
(1-3) the N type silicon chip behind the gluing is placed 100 ℃-200 ℃ toasted 5-10 minute down;
(1-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 1.5-2.5 hour down, become dense phosphorus district at the silicon chip dihedron at 1200 ℃-1260 ℃.
(2) one in above-mentioned two dense phosphorus districts is ground off, at the diffusion into the surface boron that has ground off dense phosphorus district, the thickness that makes the boron district is 50-60 μ m, and diffusion process is:
(2-1) add diboron trioxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: diboron trioxide=1000: 20-30, make dissolving fully, and become boracic silicon dioxide latex source;
(2-2) above-mentioned boracic silicon dioxide dissolving source is coated on the surface that has ground off dense phosphorus district of N type silicon chip, coating layer thickness is the 6000-8000 dust;
(2-3) the N type silicon chip behind the gluing is placed 100 ℃-200 ℃ toasted 5-10 minute down;
(2-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 12-18 hour down at 1200 ℃-1260 ℃.
Below introduce the embodiment of the inventive method.
(1) adopt two the diffusion into the surface phosphorus of latex phosphorus source method of diffusion at N type silicon chip, making each dense phosphorus district thickness of formation is 10 μ m, and diffusion process is:
(1-1) add phosphorus pentoxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: phosphorus pentoxide=1: 0.1, make dissolving fully, and become phosphorus containing silicon dioxide latex source;
(1-2) above-mentioned phosphorus containing silicon dioxide latex source is coated on two surfaces of N type silicon chip, coating layer thickness is 3500 dusts;
(1-3) the N type silicon chip behind the gluing is placed 180 ℃ toasted 10 minutes down;
(1-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 1.5 hours down at 1250 ℃; The diffusion result is that surface concentration is 10
21, diffusion depth is 8.0 μ m.
(2) one in above-mentioned two dense phosphorus districts is ground off, at the diffusion into the surface boron that has ground off dense phosphorus district, the thickness that makes the boron district is 50 μ m, and diffusion process is:
(2-1) add diboron trioxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: diboron trioxide=1000: 20, make dissolving fully, and become boracic silicon dioxide latex source;
(2-2) above-mentioned boracic silicon dioxide dissolving source is coated on the surface that has ground off dense phosphorus district of N type silicon chip, coating layer thickness is 6000 dusts;
(2-3) the N type silicon chip behind the gluing is placed 180 ℃ toasted 10 minutes down;
(2-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 14 hours down at 1250 ℃.
Final diffusion result is that dense phosphorus district surface concentration is 10
20, diffusion depth is 12 μ m,, boron district surface concentration is 5 * 10
16, diffusion depth is 50 μ m.Adhere to specification.
(1) adopt two the diffusion into the surface phosphorus of latex phosphorus source method of diffusion at N type silicon chip, making each dense phosphorus district thickness of formation is 12 μ m, and diffusion process is:
(1-1) add phosphorus pentoxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: phosphorus pentoxide=1: 0.3, make dissolving fully, and become phosphorus containing silicon dioxide latex source;
(1-2) above-mentioned phosphorus containing silicon dioxide latex source is coated on two surfaces of N type silicon chip, coating layer thickness is 4000 dusts;
(1-3) the N type silicon chip behind the gluing is placed 180 ℃ toasted 10 minutes down;
(1-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 2.4 hours down at 1250 ℃; Surface concentration is 4 * 10
20, diffusion depth is 9 μ m;
(2) one in above-mentioned two dense phosphorus districts is ground off, at the diffusion into the surface boron that has ground off dense phosphorus district, the thickness that makes the boron district is 50-60 μ m, and diffusion process is:
(2-1) add diboron trioxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: diboron trioxide=1000: 25, make dissolving fully, and become boracic silicon dioxide latex source;
(2-2) above-mentioned boracic silicon dioxide dissolving source is coated on the surface that has ground off dense phosphorus district of N type silicon chip, coating layer thickness is 8000 dusts;
(2-3) silicon chip behind the gluing is placed 180 ℃ toasted 10 minutes down;
(2-4) silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 16 hours down at 1250 ℃.
Final diffusion result is that dense phosphorus district surface concentration is 10
20, diffusion depth is 12 μ m,, boron district surface concentration is 5 * 10
16, diffusion depth is 54 μ m.Adhere to specification.
(1) adopt two the diffusion into the surface phosphorus of latex phosphorus source method of diffusion at N type silicon chip, making each dense phosphorus district thickness of formation is 12 μ m, and diffusion process is:
(1-1) add phosphorus pentoxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: phosphorus pentoxide=1: 0.5, make dissolving fully, and become phosphorus containing silicon dioxide latex source;
(1-2) above-mentioned phosphorus containing silicon dioxide latex source is coated on two surfaces of N type silicon chip, coating layer thickness is 3000 dusts;
(1-3) the N type silicon chip behind the gluing is placed 180 ℃ toasted 10 minutes down;
(1-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 3 hours down at 1250 ℃; Surface concentration is 4 * 10
20, diffusion depth is 10 μ m;
(2) one in above-mentioned two dense phosphorus districts is ground off, at the diffusion into the surface boron that has ground off dense phosphorus district, the thickness that makes the boron district is 55 μ m, and diffusion process is:
(2-1) add diboron trioxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: diboron trioxide=1000: 25, make dissolving fully, and become boracic silicon dioxide latex source;
(2-2) above-mentioned boracic silicon dioxide dissolving source is coated on the surface that has ground off dense phosphorus district of N type silicon chip, coating layer thickness is 8000 dusts;
(2-3) silicon chip behind the gluing is placed 180 ℃ toasted 10 minutes down;
(2-4) silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 16 hours down at 1250 ℃.
Final diffusion result is that dense phosphorus district surface concentration is 10
20, diffusion depth is 12 μ m,, boron district surface concentration is 5 * 10
16, diffusion depth is 56 μ m.Adhere to specification.
Sample to embodiment 3 is tested, and its key technical indexes is as shown in the table:
| Parameter name | Symbol | Test condition | Unit | Parameter value | |
| The on-state average current | I FAVM | Half-sinusoid, T j＝85℃ | A | 7000 | |
| On-state effective value electric current | I FRMS | Half-sinusoid, T j＝85℃ | A | 11000 | |
| Surge current | I FSM | t P＝10ms | A | 55000 | |
| Repetitive peak reverse voltage | V RRM | Half-sinusoid, 10ms, | V | 200 | |
| Reverse maximum peak voltage | V RSM | Half-sinusoid, 10ms | V | 300 | |
| Peak Repetitive Reverse Current | I RRM | T j＝150℃?V R＝VRRM | mA | ≤50 | |
| Pressure drop of on-state crest value | V FM | I F＝3000A?T j＝25℃ | V | ≤1.2 | |
| The working junction temperature scope | T j | ℃ | -40～150 | ||
| Reserve temperature range | T stg | ℃ | -40～170 | ||
| The crust thermal resistance | R th | Two-sided cooling | K/kW | 15 |
The diameter of the rectifier diode chip of the prepared of employing embodiment 3 is 46mm, and effective area is about 15cm
2, the on-state average current that allows to pass through is 7000A, current density can reach 467A/cm
2, pressure drop of on-state crest value is a kind of high density and high current rectifier diode less than 1.2V.If with the existing manufacture method that expands phosphorus behind the boron that expands earlier, reach same high current density, the diameter of its rectifier diode chip must reach 70mm, and effective area reaches 35cm
2, this shows that the inventive method has been saved raw material greatly, therefore also reduced the in use shared space of diode.
Claims (1)
1. the manufacture method of a high-power high-current density rectifier diode chip is characterized in that this method may further comprise the steps:
(1) adopt two the diffusion into the surface phosphorus of latex phosphorus source method of diffusion at N type silicon chip, making each dense phosphorus district thickness of formation is 10-12 μ m, and diffusion process is:
(1-1) add phosphorus pentoxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: phosphorus pentoxide=1: 0.1-0.5, make dissolving fully, and become phosphorus containing silicon dioxide latex source;
(1-2) above-mentioned phosphorus containing silicon dioxide latex source is coated on two surfaces of N type silicon chip, coating layer thickness is the 3000-4000 dust;
(1-3) the N type silicon chip behind the gluing is placed 100 ℃-200 ℃ toasted 5-10 minute down;
(1-4) the N type silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 1.5-2.5 hour down at 1200 ℃-1260 ℃;
(2) one in above-mentioned two dense phosphorus districts is ground off, at the diffusion into the surface boron that has ground off dense phosphorus district, the thickness that makes the boron district is 50-60 μ m, and diffusion process is:
(2-1) add diboron trioxide in the silicon dioxide latex, the mass ratio of adding is: the silicon dioxide latex: diboron trioxide=1000: 20-30, make dissolving fully, and become boracic silicon dioxide latex source;
(2-2) above-mentioned boracic silicon dioxide latex source is coated on the surface that has ground off dense phosphorus district of N type silicon chip, coating layer thickness is the 6000-8000 dust;
(2-3) silicon chip behind the gluing is placed 100 ℃-200 ℃ toasted 5-10 minute down;
(2-4) silicon chip after the above-mentioned baking is sent in the diffusion furnace, spread 12-18 hour down at 1200 ℃-1260 ℃.
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|---|---|---|---|
| CN2010101851987A CN101872789B (en) | 2010-05-28 | 2010-05-28 | High-power high-current density rectifier diode chip and fabrication method thereof |
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|---|---|---|---|
| CN2010101851987A CN101872789B (en) | 2010-05-28 | 2010-05-28 | High-power high-current density rectifier diode chip and fabrication method thereof |
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| CN101872789B true CN101872789B (en) | 2011-12-21 |
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| CN102554588B (en) * | 2012-01-03 | 2013-11-20 | 江苏云意电气股份有限公司 | Machining method for automobile rectifier |
| CN104637809A (en) * | 2015-02-13 | 2015-05-20 | 天津中环半导体股份有限公司 | Preparation method for miniature high-voltage diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1555086A (en) * | 2003-12-26 | 2004-12-15 | 金小玲 | Method for preparing high power semiconductor device by phosphorus containing silicon dioxide latex source expansion |
| CN1783516A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Rectifier diode, chip special for producing rectifier diode and producing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1555086A (en) * | 2003-12-26 | 2004-12-15 | 金小玲 | Method for preparing high power semiconductor device by phosphorus containing silicon dioxide latex source expansion |
| CN1783516A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Rectifier diode, chip special for producing rectifier diode and producing method |
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Assignee: Zhejiang Silicon Power Electronics Co., Ltd. Assignor: Jin Xiaoling Contract record no.: 2012330000343 Denomination of invention: High-power high-current density rectifier diode chip and fabrication method thereof Granted publication date: 20111221 License type: Exclusive License Open date: 20101027 Record date: 20120601 |
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