CN101872789B - High-power high-current density rectifier diode chip and fabrication method thereof - Google Patents
High-power high-current density rectifier diode chip and fabrication method thereof Download PDFInfo
- Publication number
- CN101872789B CN101872789B CN2010101851987A CN201010185198A CN101872789B CN 101872789 B CN101872789 B CN 101872789B CN 2010101851987 A CN2010101851987 A CN 2010101851987A CN 201010185198 A CN201010185198 A CN 201010185198A CN 101872789 B CN101872789 B CN 101872789B
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- Prior art keywords
- phosphorus
- thickness
- silicon dioxide
- diffusion
- district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 71
- 239000011574 phosphorus Substances 0.000 claims abstract description 71
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 238000009792 diffusion process Methods 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052796 boron Inorganic materials 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 96
- 239000004816 latex Substances 0.000 claims description 49
- 229920000126 latex Polymers 0.000 claims description 49
- 235000012239 silicon dioxide Nutrition 0.000 claims description 48
- 239000000377 silicon dioxide Substances 0.000 claims description 48
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 24
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims description 24
- 238000004026 adhesive bonding Methods 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000428 dust Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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Abstract
Description
Parameter name | Symbol | Test condition | Unit | Parameter value | |
The on-state average current | I FAVM | Half-sinusoid, T j=85℃ | A | 7000 | |
On-state effective value electric current | I FRMS | Half-sinusoid, T j=85℃ | A | 11000 | |
Surge current | I FSM | t P=10ms | A | 55000 | |
Repetitive peak reverse voltage | V RRM | Half-sinusoid, 10ms, | V | 200 | |
Reverse maximum peak voltage | V RSM | Half-sinusoid, 10ms | V | 300 | |
Peak Repetitive Reverse Current | I RRM | T j=150℃?V R=VRRM | mA | ≤50 | |
Pressure drop of on-state crest value | V FM | I F=3000A?T j=25℃ | V | ≤1.2 | |
The working junction temperature scope | T j | ℃ | -40~150 | ||
Reserve temperature range | T stg | ℃ | -40~170 | ||
The crust thermal resistance | R th | Two-sided cooling | K/kW | 15 |
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101851987A CN101872789B (en) | 2010-05-28 | 2010-05-28 | High-power high-current density rectifier diode chip and fabrication method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101851987A CN101872789B (en) | 2010-05-28 | 2010-05-28 | High-power high-current density rectifier diode chip and fabrication method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101872789A CN101872789A (en) | 2010-10-27 |
CN101872789B true CN101872789B (en) | 2011-12-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101851987A Expired - Fee Related CN101872789B (en) | 2010-05-28 | 2010-05-28 | High-power high-current density rectifier diode chip and fabrication method thereof |
Country Status (1)
Country | Link |
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CN (1) | CN101872789B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102554588B (en) * | 2012-01-03 | 2013-11-20 | 江苏云意电气股份有限公司 | Machining method for automobile rectifier |
CN104637809A (en) * | 2015-02-13 | 2015-05-20 | 天津中环半导体股份有限公司 | Preparation method for miniature high-voltage diode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1555086A (en) * | 2003-12-26 | 2004-12-15 | 金小玲 | Method for preparing high power semiconductor device by phosphorus containing silicon dioxide latex source expansion |
CN1783516A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Rectifier diode, chip special for producing rectifier diode and producing method |
-
2010
- 2010-05-28 CN CN2010101851987A patent/CN101872789B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1555086A (en) * | 2003-12-26 | 2004-12-15 | 金小玲 | Method for preparing high power semiconductor device by phosphorus containing silicon dioxide latex source expansion |
CN1783516A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Rectifier diode, chip special for producing rectifier diode and producing method |
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Publication number | Publication date |
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CN101872789A (en) | 2010-10-27 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Zhejiang Silicon Power Electronics Co., Ltd. Assignor: Jin Xiaoling Contract record no.: 2012330000343 Denomination of invention: High-power high-current density rectifier diode chip and fabrication method thereof Granted publication date: 20111221 License type: Exclusive License Open date: 20101027 Record date: 20120601 |
|
ASS | Succession or assignment of patent right |
Owner name: ZHEJIANG GUIDU POWER ELECTRONIC CO., LTD. Free format text: FORMER OWNER: JIN XIAOLING Effective date: 20130801 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130801 Address after: 321400 No. 15 new middle road, five town, Jinyun County, Zhejiang Patentee after: Zhejiang Silicon Power Electronics Co., Ltd. Address before: 321400 No. 15, Middle Road, Jinyun Industrial Park, Zhejiang Patentee before: Jin Xiaoling |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111221 Termination date: 20140528 |