CN102569420A - Distributed multiple cell integrated semiconductor discharge tube and producing method thereof - Google Patents
Distributed multiple cell integrated semiconductor discharge tube and producing method thereof Download PDFInfo
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- CN102569420A CN102569420A CN2012100061326A CN201210006132A CN102569420A CN 102569420 A CN102569420 A CN 102569420A CN 2012100061326 A CN2012100061326 A CN 2012100061326A CN 201210006132 A CN201210006132 A CN 201210006132A CN 102569420 A CN102569420 A CN 102569420A
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Abstract
The invention discloses a distributed multiple cell integrated semiconductor discharge tube and a producing method thereof, which belong to the technical field of semiconductors. The areas of cathode emission areas N1 and N3 of a single cell discharge tube are divided equally into a plurality of square cathode emission areas, the square cathode emission areas are unfolded and reused horizontally and longitudinally on base regions and distributed centrosymmetricaly respectively on the corresponding base regions P1 and P2 to form a two-dimensional symmetrical multiple cell integrated structure, the areas of two cathode short circuit areas of each multiple cell structure are equal. The distributed multiple cell integrated semiconductor discharge tube and the producing method have the advantages that cooling uniformity of single cell discharge tubes of semiconductors is improved, turn-on time of discharge tubes is reduced, and stability and reliability of discharge tubes are improved remarkably. The distributed multiple cell integrated semiconductor discharge tube and producing method thereof is applicable to lightening protection electronic devices in the field of telecommunication.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of semiconductor discharge tube.
Background technology
The semiconductor discharge tube that the most often uses in the communications industry is unit born of the same parents' solid discharging tube.It mainly is the semiconductor discharge tube of processing through the NPNPN five-layer structure.Fig. 2 is the profile of unit born of the same parents' semiconductor discharge tube.As can beappreciated from fig. 2; Discharge tube is on the N type silicon chip of polishing, to carry out the P type to mix; On silicon chip, carry out the heavy doping of N type again, and in carrying out the heavy doping process of N type, keep the short dot (circle among Fig. 1) of some P types, with this NPNPN five-layer structure that forms.With Fig. 2 is example, and wherein N is the cathode emission area that short base (or boryl district), N1a and N3a that growing base area, P1a and the P2a of discharge tube is discharge tube are discharge tube.Da is a short dot.
Fig. 1 is the surface texture sketch map of unit born of the same parents' semiconductor discharge tube.Among Fig. 1,1a is N type cathode emission area, and 2a is short base (being boryl district or P type base).In Fig. 2, T1a, T2a are respectively metal electrode up and down, and J2a, J3a are the PN junctions that the first time, the P type diffuseed to form on the N type silicon chip, and J1a, J4a are the PN junctions that N type heavy doping for the second time diffuses to form, and Da is the last short dot structure of cathode emission area N1a, N3a.
When electric current when T1a flows into; This moment, the right of discharge tube was in running order, by PNPN work, because J2a and two PN junction positively biaseds of J4a; So voltage mainly is added on the PN junction J3a; This moment, avalanche breakdown took place in J3a, and avalanche current flows through the p type island region P2a and the heavy doping N type district N3a knot face of broad, reached the purpose of discharge.Because the cathode emission area concentrates on a side of discharge tube, it is bigger to cause the electric current of avalanche breakdown to flow through the area of discharge tube, thereby, cause ON time longer.In addition because the cathode emission area of discharge tube concentrates on a side of discharge tube, the heat that produces when causing the discharge tube discharge can not distribute equably with discharge tube on, thereby burn out discharge tube easily.
Someone studies polynary born of the same parents' semiconductor discharge tube, has proposed " multi-Cell Structure Model for Semiconductor Arrestor research " (" HUST's journal " the 12nd phase in 1999).Polynary born of the same parents' semiconductor discharge tube of mentioning in the literary composition is heavy doping N district to be cut apart be arranged in equably above the P district afterwards.Fig. 4 is the vertical structure sketch map of discharge tube, when the forward voltage of lightning surge generation is added in the device two ends, and J2 knot and J3 knot positively biased, the J2 knot bears forward voltage, and its reverse leakage current is lateral flow along the P base, because current in the short is to the T2 electrode.When surge voltage rose, the reverse leakage current of J2 knot increased, and the transverse electric pressure drop of P base increases thereupon.In case this pressure drop is greater than the cut-in voltage of J3 knot, device portions is open-minded.Electronics injects to the P district in the N+ district, and current amplification factor α 2 beginnings increase gradually.When α 1+ α 2=1, device is open-minded comprehensively, gets into the low-resistance current state.But, as shown in Figure 3, because the N district of cutting apart does not reasonably arrange.The guiding discharge pipe is discharge tube conducting rapidly when the low-resistance current state, and owing to be to be arranged equably in the cathode emission area, and comparatively intensive.Can only the heat of discharge tube roughly be disperseed, but can not effectively the heat of discharge tube evenly be opened.
Above-mentioned polynary born of the same parents' semiconductor discharge tube can be kept the coordination of electric current and anti lightning surge capacity, but the discharge tube ON time is long when the low-resistance current state, conducting rapidly, inhomogeneous two subject matters of heat radiation after the long-term work.
Summary of the invention
The present invention is directed in the existing semiconductor discharge tube multi cell structure heavy doping N district and arrange unreasonablely, exist ON time to grow and the uneven problem of dispelling the heat, propose a kind of distributed polynary born of the same parents' integrated semiconductor discharge tube structure.
The technical scheme that the present invention solves the problems of the technologies described above is, designs a kind of distributed polynary born of the same parents' integrated semiconductor discharge tube, and this semiconductor discharge tube comprises: metal electrode, cathode emission area, boryl district and growing base area; The longitudinal profile of discharge tube is N1, P1, N2, P2, N3 five-layer structure; Be positioned at the center in semiconductor discharge tube zone at vertical growing base area, carry out the boron expanding, form boryl district P1, P2 at the upper and lower surface of growing base area; In the boryl district, carry out the diffusion of cathode emission area then; Distributed diffusion is carried out in the cathode emission area, constitute the multi cell structure of two-dimensional symmetric, at last again at its surface coverage metal.Keep under the constant situation of N1, P1, N2, P2, N3 five-layer structure the area of cathode emission area N1 and N3 being distinguished all according to 2 (N+1) at the longitudinal profile of the gross area that does not increase the discharge tube device surface and discharge tube
2Principle carry out five equilibrium, be divided into a plurality of square cathode emission areas and form new cathode emission area, with the horizontal and vertical expansion diffusion in the boryl district of a plurality of square cathode emission areas; And be distributed on corresponding the boryl district P1 and P2 with being centrosymmetric respectively; Constitute the multi cell structure (like eight cellulars, 18 cellulars, 32 cellulars etc.) of two-dimensional symmetric, two cathode emission area N1 in each multi cell structure are equal with the N3 area, wherein; N is according to the decision of cellular number, cellular number=2 (N+1)
2
New cathode emission area is specially; First square cathode emission area of diffusion in the P1 upper left corner, semiconductor discharge tube boryl district; A square cathode emission area is spread in all empty square space of horizontally-arranged and vertical setting of types direction again; Remaining part is a benchmark with first horizontally-arranged and first vertical setting of types; A square cathode emission area is spread in empty square space again, and the square cathode emission zone position that square cathode emission area that boryl district P2 upward spreads and boryl district P1 go up diffusion staggers, and does not spread the regional back side diffusion square cathode emission area of square cathode emission area in the front.
When surge current during through polynary born of the same parents' semiconductor discharge tube; Electric current at first flows into from metal electrode T1; The PN junction J4 positively biased that PN junction J2 that P1, N1 constitute and P2, N3 constitute; The main PN junction J3 that is made up of P2, N2 bears reverse voltage, and its reverse leakage current flows to the T2 electrode along boryl district P2 lateral flow by short dot D.When surge voltage continued to rise, J3 knot reverse current increased, and the pressure drop of boryl district P2 transverse electric increases thereupon.In case the cut-in voltage that this pressure drop is tied greater than J4, the conducting of polynary born of the same parents' semiconductor discharge tube part, the N3 district begins to inject electronics to boryl district P2, and transistorized current amplification factor α 2 beginnings of N3P2N1 increase gradually; Simultaneously, the transistorized emitter of P1N2P2 is to N-base injected hole, and its current amplification factor α 1 also begins to increase gradually.When α 1+ α 2>1, the J2 knot transfers forward bias to by reverse bias, and polynary born of the same parents' semiconductor discharge tube is open-minded, gets into the low-resistance current state.
The present invention also proposes a kind of distributed polynary born of the same parents' integrated semiconductor discharge tube making method; Be specially; On N type substrate N2, carry out boron diffusion, form boryl district P1 and P2 on N type substrate two sides, boryl district P1 and P2 are divided into the little square base that area equates respectively; The little square base number in each boryl district equals two times of cellular numbers; On boron diffusion base P1 and P2, carry out the heavy doping diffusion of N again, form cathode emission area N1 and N3, with the area of cathode emission area N1 and N3 respectively according to 2 (N+1)
2Principle carry out five equilibrium; Be divided into the square cathode emission area that a plurality of areas equate, with square cathode emission area respectively on boryl district P1 and P2 horizontal and vertical expansion multiplexing, and be distributed on the base P1 and P2 of correspondence with being centrosymmetric respectively; Constitute the multi cell structure of two-dimensional symmetric; Wherein, N is according to polynary born of the same parents' number decision, cellular number=2 (N+1)
2
Said expansion is multiplexing to be specially; First square cathode emission area of diffusion in the P1 upper left corner, semiconductor discharge tube boryl district; A square cathode emission area is spread in all empty square space of horizontally-arranged and vertical setting of types direction again; Remaining part is a benchmark with first horizontally-arranged and first vertical setting of types; A square cathode emission area is spread in empty square space again, and the square cathode emission zone position that square cathode emission area that boryl district P2 upward spreads and boryl district P1 go up diffusion staggers, the positive square cathode emission area of regional back side diffusion of not spreading square cathode emission area
Polynary born of the same parents' semiconductor discharge tube of the present invention has mainly improved α 1 and has increased speed.Owing to the cathode emission area is cut apart, has been increased electric current and flow through second transistorized density.Thereby electric current is increased rapidly, reduced the service time of discharge tube.When surge current decline, α 1, α 2 descend thereupon, if α 1+ α 2 < 1, the J2 knot is in partially anti-again, and then this polynary born of the same parents' semiconductor discharge tube automatically restores to high-impedance state.
Distributed integrated morphology provided by the invention goes up surge current in any direction all to be tending towards evenly, and the heating that causes when surge current flows through device is also more even, thereby reduces because the too concentrated probability that causes the permanent damage of discharge tube of heat.Secondly, because the use of distributed multi cell structure has increased the initial conducting area in emitter region, thereby reduced discharge tube service time.In the time of polynary born of the same parents' semiconductor discharge tube work, because the area of cathode emission area has been carried out five equilibrium, thus increased the girth of cathode emission area, and electric current carries out releasing of electric current through the four-layer structure that discharge tube is left through the edge of cathode emission area just again.The final effect that realizes Homogeneouslly-radiating, repid discharge.
Description of drawings
Fig. 1 is the surface texture sketch map of unit born of the same parents' semiconductor discharge tube;
Fig. 2 is the vertical structure sketch map of unit born of the same parents' semiconductor discharge tube;
Fig. 3 is the surface texture sketch map of common polynary born of the same parents' integrated semiconductor discharge tube;
Fig. 4 is the vertical structure sketch map of common polynary born of the same parents' integrated semiconductor discharge tube;
Fig. 5 is the surface texture sketch map of the distributed eight cellular integrated semiconductor discharge tubes of the present invention;
Fig. 6 is the vertical structure sketch map of the distributed eight cellular integrated semiconductor discharge tubes of the present invention.
Embodiment
Further specify below in conjunction with the accompanying drawing specific embodiments of the invention.
With distributed eight cellular semiconductor discharge tubes is example, and Fig. 5 is the surface texture sketch map of distributed eight cellular integrated semiconductor discharge tubes of the present invention.Fig. 6 is the vertical structure sketch map of the distributed eight cellular integrated semiconductor discharge tubes of Fig. 5.
As shown in Figure 6; At first on N type substrate N2, carry out boron diffusion; All form boryl district P1 and P2 and two PN junction J2 and J3 on the two sides of N type substrate; And then on boron diffusion base P1 and P2, carry out the heavy doping diffusion of N type, form cathode emission area N1 and N3 and PN junction J1 and J4, with the cathode emission area N1 of discharge tube and N3 according to 2 (N+1)
2Principle carried out five equilibrium, 2 (N+1) are arranged respectively on P1 and P2
2Individual N1 and N3 emitter region and PN junction J1 and J4 (concrete cathode emission area dispersing mode is as shown in Figure 5), wherein, N is according to polynary born of the same parents' number decision, cellular number=2 (N+1)
2Owing in the cathode emission area short dot is arranged, consider the distribution of short dot, and take into account the realizability of photoetching again; Rule of thumb N gets 0,1,2,3,4 usually, can obtain two cellulars, eight cellulars, 18 cellulars, 32 cellulars and 50 cellular discharge tubes so respectively.
When each cathode emission area of diffusion, all have some apertures not carry out the heavy doping of N type, remain P-type material, such aperture forms short dot.At last, after diffusion is accomplished, all carry out the deposition of metal electrode T1 and T2 again on the two sides of chip.
Fig. 5 is the surface texture sketch map of the distributed eight cellular integrated semiconductor discharge tubes of the present invention; Can find out that the cellular number is 8; Cathode emission area N1 and N3 layer are divided into 8 square cathode emission areas respectively; The square cathode emission area is placed on boryl district P1 and the P2 respectively at interval, forms eight cellular structures.
Polynary born of the same parents' integrated semiconductor discharge tube is according to 2 (N+1) with the cathode emission area N1 of unit born of the same parents' discharge tube and N3
2Principle carry out five equilibrium (wherein N=0,1,2,3,, cellular number=2,8,18,32,50) at 4 o'clock, be about to N1 and N3 layer and be divided into 2 (N+1) respectively
2Part forms a plurality of square cathode emission areas, and the square cathode emission area horizontal and vertical expansion on the base that forms after five equilibrium is cut apart is multiplexing.
The concrete multiplexing following mode that adopts.Earlier the boryl zoning is divided into 2 [2 (N+1)
2] individual blockage, be about to boryl district P1 and P2 and be divided into two times of several blockages of cellular equably.As make two cellular discharge tubes and then the boryl zoning is divided into 4 blockages; Eight cellular discharge tubes then are divided into 16 blockages with the boryl zoning; By that analogy; In ready-portioned boryl district, carry out N type heavy doping diffusion again, first square cathode emission area of blockage diffusion in the upper left corner in boryl district, discharge tube front, horizontally-arranged and vertical setting of types all spread a square cathode emission area according to an empty square space (square space area equals square cathode emission area area) more then; Remaining part is a benchmark with first horizontally-arranged and first vertical setting of types again; Mode according to a square cathode emission area of diffusion, an empty square space evenly spreads square cathode emission area in the boryl district in front, dispenser cathode emitter region mode adopts in the boryl district, the discharge tube back side; With the same distribution mode in dispenser cathode emitter region, front; At interval a square cathode emission area is placed in a square cathode emission area, and the mode that staggers and place with the square cathode emission zone position in front, the promptly positive regional back side diffusion cathode emission area that does not have the dispenser cathode emitter region.
Fig. 6 is the vertical structure sketch map of distributed eight cellular integrated semiconductor discharge tubes, and Fig. 6 is the profile of the eight cellular semiconductor discharge tubes of Fig. 5.Among Fig. 6, polynary born of the same parents' semiconductor discharge tube upper and lower faces is respectively metal layer M1, M2, and upper and lower metal electrode is T1, T2, and four PN junction J1, J2, J3, J4, emitter region N1, the last short dot D of N3.
After the cathode emission area disperseed according to mentioned above principle, be about to the J1 knot and carried out on average, disperseed regularly with the J4 knot, when surge current come then J4 and the conducting of J1 knot sooner, dispel the heat more even.Than traditional semiconductor discharge tube, reach Homogeneouslly-radiating and reduce the discharge tube effect of service time.
The present invention is divided into a plurality of cathode emission areas with the cathode emission area area; Be distributed in the boryl district with being centrosymmetric; Cathode emission area area in each multi cell structure equates like this, and this distributed integrated morphology goes up surge current in any direction all to be tending towards evenly, to have improved the surge climbing of device when work; Thereby the heat that has caused when having disperseed the device work area to disperse the reverse current lateral flow; The heating that causes when surge current flows through device is also more even, has avoided the high concentration of heat, reduces the working temperature of device; Thereby reduce too to concentrate the probability of the permanent damage that causes discharge tube, improved the heat radiation uniformity of single primitive unit cell semiconductor discharge tube owing to heat.
Because adopt distributed multi cell structure, the total area of cathode emission area does not change, but the girth of cathode emission area has increased; Again because the electric current of semiconductor discharge tube mainly is on the limit of cathode emission area, to flow through; Thereby than the unit born of the same parents' semiconductor discharge tube, increased the girth of emitter region, promptly increased the initial conducting area in emitter region; Thereby reduced discharge tube service time, obviously improved the stability and the reliability of device.
The present invention can directly apply to the anti-thunderbolt electronic equipment in the communications field.
With the 5kA semiconductor discharge tube is example; Adopt conventional structure and get N and 0 compare; Adopt 8/20us impulse current testing scheme: (1) ladder increment method: with 1kA is benchmark; Tested object: the distributed multi cell structure of conventional structure and the present invention is benchmark test with 5kA, impacts 10 times; In the test, the operating state of sample is normal; (per twice test interval cooling one minute) after the 5kA test, is benchmark test with 6kA again; Conventional structure impacts 1 time, and sample opens circuit, and adopts distributed multi cell structure, impacts 10 times; In the test, the operating state of sample is normal; (per twice test interval cooling one minute) after the 6kA test, is benchmark test with 7kA again; Sample flashover occurs, the sample short circuit in impacting primary test; Therefore, adopt distributed multi cell structure, conducting is faster, and the anti-surge ability has improved 20%.
Claims (5)
1. distributed polynary born of the same parents' integrated semiconductor discharge tube, comprising: metal electrode, cathode emission area, boryl district and growing base area is characterized in that; The vertical of discharge tube is N1, P1, N2, P2, N3 five-layer structure; Growing base area is positioned at the center in semiconductor discharge tube zone, carries out the boron expanding at the upper and lower surface of growing base area, forms boryl district P1, P2; In the boryl district, cathode emission area N1 and N3 are carried out the distributed multi cell structure that diffuses to form, again at its surface coverage metal.
2. according to the said distributed polynary born of the same parents' integrated semiconductor discharge tube of claim 1, it is characterized in that said multi cell structure is specially, with the area of cathode emission area N1 and N3 respectively according to 2 (N+1)
2Principle carry out five equilibrium, be divided into a plurality of square cathode emission areas, with the horizontal and vertical expansion diffusion in the boryl district of a plurality of square cathode emission areas; And be distributed on corresponding the boryl district P1 and P2 with being centrosymmetric respectively; Constitute the multi cell structure of two-dimensional symmetric, two cathode emission area N1 in each multi cell structure are equal with the N3 area, wherein; N is according to the decision of cellular number, cellular number=2 (N+1)
2, N=0,1,2,3,4.
3. according to the said distributed polynary born of the same parents' integrated semiconductor discharge tube of claim 1; It is characterized in that; First square cathode emission area of diffusion in the P1 upper left corner, semiconductor discharge tube boryl district; A square cathode emission area is spread in all empty square space of horizontally-arranged and vertical setting of types direction again, and remaining part is a benchmark with first horizontally-arranged and first vertical setting of types, and a square cathode emission area is spread in empty square space again; The square cathode emission zone position that square cathode emission area that boryl district P2 upward spreads and boryl district P1 go up diffusion staggers, the positive square cathode emission area of regional back side diffusion of not spreading square cathode emission area.
4. distributed polynary born of the same parents' integrated semiconductor discharge tube making method is characterized in that, on N type substrate N2, carries out boron diffusion; Form boryl district P1 and P2 on N type substrate two sides; Boryl district P1 and P2 are divided into the little square base that area equates respectively, and the little square base number in each boryl district equals two times of cellular numbers, on boron diffusion base P1 and P2, carries out the heavy doping diffusion of N again; Form cathode emission area N1 and N3, with the area of cathode emission area N1 and N3 respectively according to 2 (N+1)
2Principle carry out five equilibrium; Be divided into the square cathode emission area that a plurality of areas equate, with square cathode emission area respectively on boryl district P1 and P2 horizontal and vertical expansion multiplexing, and be distributed on the base P1 and P2 of correspondence with being centrosymmetric respectively; Constitute the multi cell structure of two-dimensional symmetric; Wherein, N is according to polynary born of the same parents' number decision, cellular number=2 (N+1)
2
5. manufacturing approach according to claim 4; It is characterized in that; Said expansion is multiplexing to be specially, first square cathode emission area of diffusion in the P1 upper left corner, semiconductor discharge tube boryl district, and a square cathode emission area is spread in all empty square space of horizontally-arranged and vertical setting of types direction again; Remaining part is a benchmark with first horizontally-arranged and first vertical setting of types; A square cathode emission area is spread in empty square space again, and the square cathode emission zone position that square cathode emission area that boryl district P2 upward spreads and boryl district P1 go up diffusion staggers, the positive square cathode emission area of regional back side diffusion of not spreading square cathode emission area.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465739A (en) * | 2014-12-18 | 2015-03-25 | 常熟市聚芯半导体科技有限公司 | Discharge tube |
| CN104485356A (en) * | 2014-12-18 | 2015-04-01 | 常熟市聚芯半导体科技有限公司 | Low-capacitance low-voltage discharge tube |
| CN111640784A (en) * | 2020-04-20 | 2020-09-08 | 北京天岳京成电子科技有限公司 | Composite Pin Schottky diode with plasma diffusion layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104465739A (en) * | 2014-12-18 | 2015-03-25 | 常熟市聚芯半导体科技有限公司 | Discharge tube |
| CN104485356A (en) * | 2014-12-18 | 2015-04-01 | 常熟市聚芯半导体科技有限公司 | Low-capacitance low-voltage discharge tube |
| CN104485356B (en) * | 2014-12-18 | 2018-06-22 | 金宝兴 | A kind of low capacitance low-voltage discharge tube |
| CN111640784A (en) * | 2020-04-20 | 2020-09-08 | 北京天岳京成电子科技有限公司 | Composite Pin Schottky diode with plasma diffusion layer |
| CN111640784B (en) * | 2020-04-20 | 2022-11-11 | 元山(济南)电子科技有限公司 | Composite Pin Schottky diode with plasma diffusion layer |
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