CN113488464B - Transient voltage suppression protection device with grid-shaped cathode and anode groove structure - Google Patents
Transient voltage suppression protection device with grid-shaped cathode and anode groove structure Download PDFInfo
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- CN113488464B CN113488464B CN202111047867.9A CN202111047867A CN113488464B CN 113488464 B CN113488464 B CN 113488464B CN 202111047867 A CN202111047867 A CN 202111047867A CN 113488464 B CN113488464 B CN 113488464B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
Abstract
The invention provides a transient voltage suppression protection device with a grid-shaped cathode and anode groove structure, which comprises: a P-type substrate on which an N-type epitaxy is grown; an N-type well region is manufactured on the left side of the upper part of the N-type epitaxy, and a P-type well region tangent to the N-type well region is manufactured on the right side of the upper part of the N-type epitaxy; a first N + region is formed in the left side of the inner part below the surface of the N-type well region, and a first P + region tangent to the right side of the first N + region is formed in the right side of the inner part; a second N + region is formed in the left side of the inner part below the surface of the P-type well region, and a second P + region tangent to the right side of the second N + region is formed in the right side of the inner part below the surface of the P-type well region; a third N + region is formed at the junction of the N-type well region and the P-type well region and is used for forming a trigger region; a latticed first groove structure is arranged in the first P + region and divides the first P + region into a plurality of grids; a second grid-shaped groove structure is arranged in the second N + region and divides the second N + region into a plurality of grids; the device can improve the device holding voltage Vh to avoid latch-up, and can make the current distribution of the device more uniform and improve the current capability of the device.
Description
Technical Field
The invention relates to an SCR (silicon controlled rectifier) electrostatic protection device, in particular to a transient voltage suppression protection device with a grid cathode and anode groove structure, which is mainly used in the field of electrostatic Discharge (ESD) protection.
Background
Electrostatic discharge (ESD) is ubiquitous in the processes of manufacturing, packaging, testing and using chips, accumulated static charges are released in a nanosecond-microsecond time by a current of several amperes or dozens of amperes, instantaneous power is up to dozens or hundreds of watts, and the destruction strength of the ESD (electrostatic discharge) to the chips in a circuit system is very high. Statistically, more than 35% of chip failures are due to ESD damage. Therefore, in the design of chips or systems, the design of the esd protection module is directly related to the functional stability of the circuit system and the system reliability, and is very important for electronic products.
For electrostatic protection, an SCR (silicon controlled rectifier) structure is a device with high current density; however, since the holding voltage Vh of the SCR structure is very low, it is very easy to cause latch-up, so in practical application, the SCR is not generally selected as an electrostatic protection device for medium-high voltage power protection (fig. 1 is a structure of a conventional medium-high voltage lateral SCR device); in order to enable the SCR device to be used in medium-high voltage power protection, it is critical to increase the holding voltage Vh; raising the holding voltage Vh generally causes a significant reduction in the current capability of the device.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a transient voltage suppression protection device with a grid cathode and anode groove structure, which can improve the device holding voltage Vh to avoid latch-up on one hand, and can make the device current distribution more uniform, improve the device current capability and suppress the degradation of ESD capability on the other hand. In order to achieve the technical purpose, the embodiment of the invention adopts the technical scheme that:
the embodiment of the invention provides a transient voltage suppression protection device with a grid cathode and anode groove structure, which comprises: a P-type substrate on which an N-type epitaxy is grown; an N-type well region is manufactured on the left side of the upper part of the N-type epitaxy, and a P-type well region tangent to the N-type well region is manufactured on the right side of the upper part of the N-type epitaxy; a first N + region is formed in the left side of the inner part below the surface of the N-type well region, and a first P + region tangent to the right side of the first N + region is formed in the right side of the inner part; a second N + region is formed in the left side of the inner part below the surface of the P-type well region, and a second P + region tangent to the right side of the second N + region is formed in the right side of the inner part below the surface of the P-type well region; a third N + region is formed at the junction of the N-type well region and the P-type well region and is used for forming a trigger region;
a latticed first groove structure is arranged in the first P + region and divides the first P + region into a plurality of grids; an insulating medium is arranged in the groove of the first groove structure; connecting each grid divided by the first groove structure in the first P + region with the first N + region through a metal wire to serve as a device anode A;
a second grid-shaped groove structure is arranged in the second N + region and divides the second N + region into a plurality of grids; an insulating medium is arranged in the groove of the second groove structure; and connecting each grid divided by the second groove structure in the second N + region with the second P + region through a metal wire to be used as a cathode K of the device.
Further, the trench of the first trench structure penetrates the first P + region downward.
Further, the trench of the second trench structure penetrates the second N + region downward.
Further, the trench depths of the first trench structure and the second trench structure are the same.
The technical scheme provided by the embodiment of the invention has the following beneficial effects: in the application, the second N + region of the cathode and the first P + region of the anode of the SCR device are divided in a grid shape, on one hand, due to the blocking of a groove medium, current can present a longitudinal distribution characteristic (vertical direction in fig. 2 and 3) near the anode or cathode region of the device, so that the current concentration caused by transverse current distribution can be relieved, and the current capacity of the device is improved; on the other hand, the holding voltage Vh of the SCR device is increased due to the longer current path, thereby improving the latch-up resistance of the SCR device.
Drawings
Fig. 1 is a schematic structural diagram of a conventional low-voltage SCR device.
Fig. 2 is a schematic structural diagram of an SCR device according to a first embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an SCR device according to a second embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The first embodiment;
as shown in fig. 2, an embodiment of the present invention provides a transient voltage suppression protection device (referred to as a device for short in this application) having a grid-shaped cathode/anode trench structure, including: a P-type substrate 1, wherein an N-type epitaxy 2 grows on the P-type substrate 1; an N-type well region 3 is formed on the left side of the upper part of the N-type epitaxy 2, and a P-type well region 4 tangent to the N-type well region 3 is formed on the right side of the upper part of the N-type epitaxy 2; a first N + region 501 is formed in the left side of the inner part below the surface of the N-type well region 3, and a first P + region 601 tangent to the right side of the first N + region 501 is formed in the right side; a second N + region 502 is formed in the left side of the inner part below the surface of the P-type well region 4, and a second P + region 602 which is tangent to the right side of the second N + region 502 is formed in the right side; a third N + region 503 is formed at the junction of the N-type well region 3 and the P-type well region 4 for forming a trigger region; the trigger region can here reduce the trigger voltage of the device to meet low voltage applications;
a first grid-shaped groove structure 701 is arranged in the first P + region 601 to divide the first P + region into a plurality of grids; the layout of the first grid-like trench structure 701 may refer to the top view angle structure above the device in fig. 2; an insulating medium is arranged in a groove of the first groove structure 701, the depth of the groove of the first groove structure 701 is determined according to the actual requirement of a device, and the groove can penetrate through the first P + region 601 downwards to enter the N-type well region 3 or does not penetrate through the first P + region 601; each grid divided by the first groove structure 701 in the first P + region 601 is connected with the first N + region 501 through a metal wire to be used as a device anode A;
a second groove structure 702 in a grid shape is arranged in the second N + region 502 to divide the second groove structure into a plurality of grids; the layout of the second trench structure 702 in a grid may be seen in the top view angle structure above the device in fig. 2; an insulating medium is arranged in the trench of the second trench structure 702, and the depth of the trench of the second trench structure 702 is determined according to the actual requirement of the device, and the trench may penetrate the second N + region 502 downward and enter the P-type well region 4, or may not penetrate the second N + region 502; each grid divided by the second trench structure 702 in the second N + region 502 is connected with the second P + region 602 through a metal wire to serve as a device cathode K;
preferably, the trench depths of the first trench structure 701 and the second trench structure 702 are the same;
in the application, on one hand, the latticed division enables current to flow vertically in the second N + area 502 of the device cathode and the first P + area 601 of the device anode, and compared with the structure of a cathode monoblock N + area and an anode monoblock P + area in the traditional SCR structure, due to the blocking of a groove medium, the second N + area 502 of the device cathode and the first P + area 601 of the device anode are divided into a plurality of small grids, so that the passing current is distributed uniformly, and better current distribution can be realized; on the other hand, after the grid-shaped division, the current is increased in a path in the vertical direction, so that the amplification factor of the SCR parasitic transistor is reduced, the maintaining voltage Vh is improved, the latch-up is avoided, the emission efficiency of the parasitic transistor can be adjusted according to the geometric mode of designing and adjusting the groove division, and the maintaining voltage Vh is adjusted;
the SCR device proposed in the present application thus enables a higher ESD current capability and a higher holding voltage Vh due to a more uniform current distribution and a lower amplification factor compared to conventional lateral SCR devices.
Example two;
as shown in fig. 3, the trench depths of the first trench structure 701 and the second trench structure 702 in the second embodiment are deeper than those in the first embodiment;
in the embodiment, the deeper trench is used, so that the current of the device is distributed more uniformly in each grid, meanwhile, the path of the current of the device in the vertical direction is further increased, the amplification factor of a parasitic transistor in the SCR device is further reduced, the holding voltage Vh is improved, and the latch-up effect is avoided.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (2)
1. A transient voltage suppression protection device having a grid-like cathode and anode trench structure, comprising: a P-type substrate (1), wherein an N-type epitaxy (2) grows on the P-type substrate (1); an N-type well region (3) is manufactured on the left side of the upper part of the N-type epitaxy (2), and a P-type well region (4) tangent to the N-type well region (3) is manufactured on the right side of the upper part of the N-type epitaxy (2); a first N + region (501) is formed in the left side of the inner part below the surface of the N-type well region (3), and a first P + region (601) which is tangent to the right side of the first N + region (501) is formed in the right side of the inner part; a second N + region (502) is formed in the left side of the inner part below the surface of the P-type well region (4), and a second P + region (602) which is tangent to the right side of the second N + region (502) is formed in the right side of the inner part; a third N + region (503) is manufactured at the junction of the N-type well region (3) and the P-type well region (4) and is used for forming a trigger region; it is characterized in that the preparation method is characterized in that,
the third N + region (503) is not tangent to the first P + region (601) and the second N + region (502);
a first grid-shaped groove structure (701) is arranged in the first P + region (601) and is divided into a plurality of grids; an insulating medium is arranged in a groove of the first groove structure (701); each grid divided by the first groove structure (701) in the first P + region (601) is connected with the first N + region (501) through a metal wire to be used as a device anode A;
a second grid-shaped groove structure (702) is arranged in the second N + region (502) and is divided into a plurality of grids; an insulating medium is arranged in the groove of the second groove structure (702); connecting each grid divided by a second groove structure (702) in the second N + region (502) with a second P + region (602) through a metal wire to be used as a device cathode K;
the trenches of the first trench structure (701) penetrate down through the first P + region (601);
the trenches of the second trench structure (702) penetrate down through the second N + region (502).
2. The device of claim 1, wherein the device comprises a grid-shaped cathode and anode trench structure,
the first trench structure (701) and the second trench structure (702) have the same trench depth.
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| CN202111047867.9A CN113488464B (en) | 2021-09-08 | 2021-09-08 | Transient voltage suppression protection device with grid-shaped cathode and anode groove structure |
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| CN202111047867.9A CN113488464B (en) | 2021-09-08 | 2021-09-08 | Transient voltage suppression protection device with grid-shaped cathode and anode groove structure |
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| CN113488464B true CN113488464B (en) | 2021-12-07 |
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| CN114121944B (en) * | 2022-01-27 | 2022-05-17 | 江苏应能微电子有限公司 | Transient voltage suppression protection device with high maintenance voltage and electrostatic discharge circuit |
| CN115579360B (en) * | 2022-11-21 | 2023-03-17 | 南京融芯微电子有限公司 | PNP _ SCR device structure for ESD protection and manufacturing process |
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| CN100448007C (en) * | 2007-04-19 | 2008-12-31 | 浙江大学 | Grid-shaped electrostatic discharge protection device |
| CN107946372B (en) * | 2017-11-28 | 2020-06-30 | 电子科技大学 | Silicon controlled rectifier for ESD protection |
| CN112054050B (en) * | 2019-06-06 | 2024-03-22 | 无锡华润华晶微电子有限公司 | Transient voltage suppression diode structure and manufacturing method thereof |
| CN113345886B (en) * | 2021-08-04 | 2021-11-30 | 江苏应能微电子有限公司 | A field effect silicon controlled rectifier structure for among electrostatic discharge |
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Address after: Building 4 (8th and 9th floor), No. 5 Chuangzhi Road, Tianning District, Changzhou City, Jiangsu Province, 213000 Patentee after: Jiangsu Yingneng Microelectronics Co.,Ltd. Address before: 213002 building 8-5, Huashan Road, Xinbei District, Changzhou City, Jiangsu Province Patentee before: JIANGSU APPLIED POWER MICROELECTRONICS Co.,Ltd. |