CN202067791U - Structure of semiconductor anti-surge protecting device - Google Patents
Structure of semiconductor anti-surge protecting device Download PDFInfo
- Publication number
- CN202067791U CN202067791U CN2011200891633U CN201120089163U CN202067791U CN 202067791 U CN202067791 U CN 202067791U CN 2011200891633 U CN2011200891633 U CN 2011200891633U CN 201120089163 U CN201120089163 U CN 201120089163U CN 202067791 U CN202067791 U CN 202067791U
- Authority
- CN
- China
- Prior art keywords
- region
- thyristor
- triode
- district
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Emergency Protection Circuit Devices (AREA)
Abstract
The utility model discloses a structure of a semiconductor anti-surge protecting device, which consists of two or four protecting units. Each protecting unit is formed by connecting a PN (positive negative) junction diode, a PNPN (positive negative positive negative) type thyristor and an NPN (negative positive negative) type triode; an emitting area of the NPN triode on the front surface of an N type semiconductor substrate chip adopts a field plate structure; and the emitting area of the NPN triode adopts N+ doping and N- doping from top to bottom. The structure of the semiconductor anti-surge protecting device can be applied on a stored program control exchanger to achieve the protection of a subscriber line interface circuit (SLIC) board. Through the improvements, the current magnification times of a common base of the NPN triode can be effectively controlled; the reverse breakdown voltage of an EB (electron beam) junction is improved; and therefore, the protecting working voltage of the device is improved and reaches over 170 V.
Description
Technical field
The utility model relates to field of manufacturing semiconductor devices; be particularly related to a kind of surge voltage that will raise suddenly in the circuit of being serially connected in and absorb structure with the semiconductor device of surge protector that other circuit is protected, this device polyphone is connected on and is used for user interface circuit plate (SLIC) is implemented the semiconductor device of surge protector of protection on the stored-program control exchange.
Background technology
In Modern Electronic equipment, often have the decreased performance that unexpected voltage transient and surge current make machine system, misoperation even damage appear.Therefore, the protection to voltage transient and surge becomes an important component part that improves the machine system reliability.Along with the development of telephone communication network, how could effectively prevent to be struck by lightning, AC power fluctuation or electromagnetic induction and damage that the overvoltage surge that causes causes communication apparatus is the major issue that these those skilled in the art pay close attention to always.After European and American countries had been issued the anti-lightning surge standard of communication apparatus separately, China also issued " anti-lightning strike specification requirement of People's Republic of China's communication industry standard telecommunication terminal equipment and experimental technique YD/T9931998 " in 1998.Between short decades, anti-surge protective device has been gone through gas discharge tube, TVS diode, semiconductor solid discharging tube and anti-surge protective device able to programme.
Total the 200th phase of 2005 the 9th phases of " modern electronic technology " magazine discloses one piece of exercise question and has been " programmable semiconductor anti-surge protective device ", the article of author Zhang Fang, Su Qiuping.Circuit structure and the operation principle of the 4th generation anti-surge protective device P61089 able to programme introduced in article; Figure 1 shows that its schematic diagram; Fig. 2 is its volt-ampere characteristics of figure; this article has been analyzed P61089 protection philosophy to Subscriber Line Interface Circuit (SLIC) plate on stored-program control exchange; the result shows that P61089 is the two-path bidirectional semiconductor anti-surge protective device; also be based on PNPN structure and principle; first three for the basis of semiconductor anti-surge protective device on performance greatly improve; simultaneously; it has increased again plays the forward protection diode of clamping action and starts to control the gate triode of making usefulness the forward surge; thereby can carry out hardware programming to protection voltage; editor's scope is over the ground-10V ~-75V, P61089 almost is used for the SLIC plate is protected by all stored-program control exchanges at present.But, along with the development that the communication system high-voltage transmission requires, protection device programmable voltage scope is further widened, have higher requirement at the plane and the vertical structure design aspect of device, to satisfy the demand of communication system to high working voltage.
Summary of the invention
The utility model is further widened for adapting to the programmable voltage scope, has higher requirement at the plane and the vertical structure design aspect of device, the demand of high working voltage is provided a kind of structure of semiconductor anti-surge protective device to satisfy communication system.
The technical solution of the utility model is: a kind of structure of semiconductor anti-surge protective device, comprise substrate, and the thyristor district is set on a diagonal on the described substrate, on another diagonal diode region is set, the centre is provided with triode region;
Described thyristor district comprises that the formation thyristor N+ diffusion region of mixing from top to bottom on the described substrate, thyristor P diffusion region, unadulterated thyristor N district, bottom are the P+ districts, the thyristor back side of mixing;
Described diode region is mixed on described substrate and is formed diode P+ district, the diode N+ district of the formation of mixing below the substrate;
Triode N+ emitter region, triode P district and triode N+ district that described triode region mixes from top to bottom and forms;
Downside at described thyristor district, diode region and triode region is provided with metal layer on back, in described thyristor district, be provided with the front metal floor above the diode region, on described triode region, be provided with field plate, the edge of described field plate is greater than the triode N+ emitter region of described triode region, in described thyristor district, diode region and above the triode region, fill insulating medium layer between thyristor district, diode region and the triode region.
Further; in the structure of above-mentioned a kind of semiconductor anti-surge protective device: be doping to N+ diffusion region part under the described thyristor district front metal floor and leave one group of short circuit hole, the thyristor P diffusion layer of described thyristor N+ diffusion layer below extends upwardly to the front metal layer by the short circuit hole.
The utility model principle and effect: in order to expand the programmable voltage scope of this device, make it by original-10V ~-75V expands to-10V ~-170V, the reverse breakdown voltage of EB knot that just requires the NPN triode is controlled at suitable scope with its common base current amplification factor simultaneously greater than 170V.This also is one of difficult point in this designs and the technical process.In order to achieve the above object, this use is novel has taked following two corrective measures:
The first, on planar structure, adopted field plate techniques, the field plate edge of positive triode emitter region has been realized the N+ emitter region is covered greater than the N+ emitter region.When adding reverse voltage, the radius of curvature of the space charge region of PN junction below increases, and reverse breakdown voltage improves thereupon;
The second, on vertical structure, positive triode emitter region is provided with N-type doped layer, the back side N+ layer of N+ layer, N-layer, P-layer, substrate self from top to down successively, has constituted emitter region, base and the collector region of triode.Like this, both guaranteed that the common base current amplification factor of NPN triode was controlled at suitable scope, optimized the pattern of emitter junction again, improved the reverse breakdown voltage of EB knot.
Use the utility model, can be with the programmable voltage range expansion of device-10V ~-170V.。
Below in conjunction with the drawings and specific embodiments the present invention is carried out comparatively detailed explanation.
Description of drawings
Accompanying drawing 1 is the circuit structure of existing anti-surge protective device P61089 able to programme;
Accompanying drawing 2 is the electrical characteristics curve of anti-surge protective device P61089 able to programme;
Accompanying drawing 3 is a plan view from above of the present utility model;
Accompanying drawing 4 is the B-B profile of Fig. 3;
Accompanying drawing 5 is the C-C profile of Fig. 3;
Accompanying drawing 6 is the schematic diagram of the utility model protected location to the forward surge protection;
Accompanying drawing 7 is the schematic diagram of the utility model protected location to the negative sense surge protection;
Accompanying drawing 8 is the utility model device pin function diagram;
Accompanying drawing 9 is the utility model device outline drawing;
Accompanying drawing 10 is the utility model device application exemplary plot;
Among the figure: 1 ~ 8, pin; 9, substrate; 10, diode region; 11, thyristor district; 12, triode region; 13, short circuit hole; 14, thyristor P diffusion region; 15, thyristor back side P+ district; 16, triode N+ district; 17, diode N+ district; 18, metal layer on back; 19, front metal layer; 20, insulating medium layer; 21, triode N+ emitter region; 22, field plate; 23, triode P district.
Embodiment
As Fig. 3, Fig. 4 and shown in Figure 5, the product of present embodiment comprises substrate 9, and thyristor district 11 is set on a diagonal on the substrate 9, and diode region 10 is set on another diagonal, and the centre is provided with triode region 12 fronts as shown in Figure 3.
As shown in Figure 4 and Figure 5, mix from top to bottom in thyristor district 11 that to form thyristor N+ diffusion region, thyristor P diffusion region 14, unadulterated thyristor N district, bottom be the thyristor P+ district 15 at the thyristor back side of doping;
Diode region 10 is doping to diode P+ district on described substrate 9, the diode N+ district 17 that substrate 9 mixes below;
Triode region 12 is doping to N+ diffusion region, triode P district 21 and triode N+ district 16 from top to bottom.In thyristor district 11, the downside of diode region 10 and triode region 12 is provided with metal layer on back 18, be provided with front metal floor 19 in thyristor district 11, above the diode region 10, on triode region 12, be provided with field plate 22, the edge of field plate 22 is greater than the triode N+ emitter region 21 of triode region 12, in thyristor district 11, the front of diode region 10 and triode region 12, fill insulating medium layer 20 between thyristor district 11, diode region 10 and the triode region 12.In addition, 11 front metal floor are doping to N+ diffusion region part for 19 times and leave one group of short circuit hole 13 in the thyristor district, the thyristor P diffusion layer 14 of thyristor N+ diffusion layer below extends upwardly to front metal layer 19 by short circuit hole 13, here the top in short circuit hole 13 all links to each other with the set front metal layer 19 in thyristor N+ diffusion layer top, and the P+ diffusion layer 14 below the N+ diffusion layer extends upwardly to front metal layer 19 by short circuit hole 13.
Be illustrated in figure 3 as the utility model protected location plan view from above; as can be seen from the figure with a N type semiconductor substrate as substrate 9; on top plan view; have 6 zones; the corresponding semiconductor active region territory of individual each protected location, each active region is made up of a diode area 10, the 11 and triode region 12 in thyristor zone.
Fig. 4 left-hand component is the profile of B-B in the thyristor district 3, and as can be seen from the figure, the thyristor district 11 in substrate 9 fronts is provided with N+ diffusion layer and P+ diffusion layer 14 from the top down successively on cross section.The thyristor district at substrate 9 back sides is provided with P+ district, the thyristor back side 15 from bottom to top, is the N type lightly-doped layer of substrate 9 self between the thyristor P diffusion layer 14 in thyristor district 11 and the P+ diffusion layer 15, constitutes the PNPN thyristor with this from bottom to top in thyristor district 11.In the N+ diffusion layer of thyristor, one group of short circuit hole 13 is set at interval, the top in each short circuit hole all links to each other with the set metal level 19 in N+ diffusion layer top, and thyristor P diffusion layer below the N+ diffusion layer 14 extends upwardly to front metal layer 19 by short circuit hole 13.Substrate 9 back sides are provided with metal layer on back 18, and metal layer on back 18 contacts with P+ diffusion layer 15.
Fig. 4 right-hand component is the profile of diode region 10, and as can be seen from the figure, the diode region 10 in substrate 9 fronts is provided with the P+ diffusion layer from the top down on cross section.The diode region at substrate 9 back sides is provided with diode N+ diffusion layer 17 from bottom to top, is the N type lightly-doped layer of substrate 9 self between the P+ diffusion layer of diode region 10 and the diode N+ diffusion layer 17, constitutes diode from bottom to top with this diode region 10.
Fig. 5 right side is the profile of NPN type triode region 12, as can be seen from the figure, the triode emitter region 12 in above-mentioned substrate 9 fronts is provided with N-type doped layer, the back side N+ layer 16 of N+ layer, N-layer, P-layer, substrate 9 self from top to down successively on cross section, has constituted NPN type triode with this from top to bottom at triode region 12.On top plan view, metal level 22 edges of the triode emitter region 12 in above-mentioned substrate 9 fronts have been realized N+ emitter region 12 is covered, thereby have been constituted field plate structure greater than N+ emitter region 12.
The A port of the protected location of present embodiment is drawn from metal layer on back 18, and the K port is drawn by front metal layer 19.The G port is drawn from front metal layer 19.
The package interior of the structure of present embodiment protection device has two protected locations, and these two protected locations can be produced on the same N type semiconductor substrate, also can be produced on the N type semiconductor substrate.
Figure 10 is a present embodiment device application exemplary plot, and as can be seen from the figure, the present embodiment device has two protected locations, is used for stored-program control exchange to the firm and hard existing protection of Subscriber Line Interface Circuit (SLIC).Annexation in the application can draw referring to Fig. 8 and Figure 10.
Fig. 6 is the schematic diagram of present embodiment device to the forward surge protection; as shown in the figure; in when, on the circuit forward surge taking place when; the rapid conducting of forward diode; the surge energy of releasing is to ground; make surge impact can't enter Subscriber Line Interface Circuit (SLIC) plate, thereby protected the components and parts on Subscriber Line Interface Circuit (SLIC) plate.
Fig. 7 is the schematic diagram of present embodiment device to the negative sense surge protection; as shown in the figure; in when, on the circuit negative sense surge taking place when; the rapid conducting of gate terminals triode, and injection current is to thyristor, thus cause the positive feedback of electric current; make thyristor enter the breech lock conducting; the surge energy of releasing makes surge impact can't enter Subscriber Line Interface Circuit (SLIC) plate, thereby has protected the components and parts on Subscriber Line Interface Circuit (SLIC) plate to ground.
In order to guarantee long Distance Transmission (such as popularizing of vast rural telephone system), need to improve SLIC plate working power ,-48V can bring up to-75V or-170V, just the protection voltage to this device carries out hardware programming.At present the area requirement of the input voltage that need programme to the structure of programmable semiconductor anti-surge protective device is more extensive; the utility model provides the scope of widening device input voltage able to programme effective measures; and response speed is fast, flow-resistant capacity is strong, and the life-span is long.
Embodiment two: a kind of programmable semiconductor anti-surge protective device with twice doping of field plate structure and emitter region.
The difference of this protection device and embodiment one is: the package interior of device has only a protected location.The mechanism of this protected location is identical with embodiment one with content, repeats no more.
Embodiment three: a kind of programmable semiconductor anti-surge protective device with twice doping of field plate structure and emitter region.
The difference of this protection device and embodiment one is: the package interior of device has four protected locations.The mechanism of this protected location is identical with embodiment one with content, repeats no more.The device that present embodiment has four protected locations is two pairs of two-path bidirectional semiconductor anti-surge protective devices.
The foregoing description only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present utility model and enforcement according to this, can not limit protection range of the present utility model with this.All equivalences of being done according to the utility model spirit change or modify, and all are encompassed within the protection range of the present utility model.
Claims (2)
1. the structure of a semiconductor anti-surge protective device, comprise substrate (9), it is characterized in that: on the last diagonal of described substrate (9) thyristor district (11) is set, diode region (10) is set on another diagonal, the centre is provided with triode region (12);
Described thyristor district (11) comprises that the formation thyristor N+ diffusion region of mixing from top to bottom on the described substrate (9), thyristor P diffusion region (14), unadulterated thyristor N district, bottom are the P+ districts, the thyristor back side (15) of mixing;
Described diode region (10) is mixed on described substrate (9) and is formed diode P+ district, the following diode N+ district (17) of mixing and forming of substrate (9);
Triode N+ emitter region (21), triode P district (23) and triode N+ district (16) that described triode region (12) mixes from top to bottom and forms;
In described thyristor district (11), the downside of diode region (10) and triode region (12) is provided with metal layer on back (18), in described thyristor district (11), be provided with front metal layer (19) above the diode region (10), on described triode region (12), be provided with field plate (22), the edge of described field plate (22) is greater than the triode N+ emitter region of described triode region (12), in described thyristor district (11), above diode region (10) and the triode region (12), thyristor district (11), fill insulating medium layer (20) between diode region (10) and the triode region (12).
2. the structure of a kind of semiconductor anti-surge protective device according to claim 1; it is characterized in that: be doping to N+ diffusion region part under described thyristor district (11) the front metal floor (19) and leave one group of short circuit hole (13), the thyristor P diffusion layer (14) of described thyristor N+ diffusion layer below extends upwardly to front metal layer (19) by short circuit hole (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200891633U CN202067791U (en) | 2011-03-30 | 2011-03-30 | Structure of semiconductor anti-surge protecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200891633U CN202067791U (en) | 2011-03-30 | 2011-03-30 | Structure of semiconductor anti-surge protecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202067791U true CN202067791U (en) | 2011-12-07 |
Family
ID=45061646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200891633U Expired - Lifetime CN202067791U (en) | 2011-03-30 | 2011-03-30 | Structure of semiconductor anti-surge protecting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202067791U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010602A (en) * | 2019-04-09 | 2019-07-12 | 捷捷半导体有限公司 | A kind of low breakdown voltage discharge tube and preparation method thereof |
| CN113809728A (en) * | 2021-11-16 | 2021-12-17 | 上海维安半导体有限公司 | Integrated blocking type surge protection device |
-
2011
- 2011-03-30 CN CN2011200891633U patent/CN202067791U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010602A (en) * | 2019-04-09 | 2019-07-12 | 捷捷半导体有限公司 | A kind of low breakdown voltage discharge tube and preparation method thereof |
| CN110010602B (en) * | 2019-04-09 | 2023-11-28 | 捷捷半导体有限公司 | Low-breakdown-voltage discharge tube and manufacturing method thereof |
| CN113809728A (en) * | 2021-11-16 | 2021-12-17 | 上海维安半导体有限公司 | Integrated blocking type surge protection device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102856318B (en) | Uni-directional transient voltage suppressor | |
| CN103887331B (en) | VLD terminal of high pressure IGBT device and preparation method thereof | |
| CN201498983U (en) | Programmable semiconductor anti-surge protective device with deep well structure | |
| CN102142440B (en) | Thyristor device | |
| CN101640414B (en) | Programmable semiconductor anti-surge protective device with deep trap structure | |
| CN109950302A (en) | A kind of soft punch-through of high pressure carbon SiClx IGBT | |
| CN103441125A (en) | Surge protection circuit based on bidirectional thyristor and method for manufacturing same | |
| CN103165600B (en) | A kind of esd protection circuit | |
| CN202067791U (en) | Structure of semiconductor anti-surge protecting device | |
| Vobecky et al. | New thyristor platform for UHVDC (> 1 MV) transmission | |
| CN104409454A (en) | NLDMOS anti-static protection tube | |
| CN104269402A (en) | High-voltage ESD protective circuit with stacked SCR-LDMOS | |
| CN103579366B (en) | TVS device and manufacture method | |
| CN104269401A (en) | Novel ESD protection device based on SCR structure | |
| CN100590872C (en) | Low trigger voltage thyristor electrostatic protection structure | |
| CN106129125B (en) | Three ends carry the lateral constant current device and its manufacturing method of safeguard function | |
| CN103474346B (en) | The implementation method of transient voltage suppression diode PN junction | |
| CN105428353A (en) | High-voltage ESD protective device provided with fin type LDMOS structure | |
| CN103258815A (en) | Bidirectional and symmetrical high-speed overvoltage protective device | |
| CN205248270U (en) | High pressure ESD protective device with class fin formula LDMOS structure | |
| CN205283121U (en) | Surge protection device | |
| CN109599442A (en) | Heat dissipation type Zener diode | |
| CN103872110A (en) | Back surface structure of reverse conducting IGBT and manufacturing method thereof | |
| CN103872053B (en) | TI-IGBT device | |
| CN106816463A (en) | A kind of terminal structure, semiconductor devices and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: BRIGHTKING INC. Free format text: FORMER NAME: BRIGHTKING CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 523808 modern enterprise accelerator No. 3, Songshan hi tech Industrial Development Zone, Dongguan, Guangdong Patentee after: BRIGHTKING CO., LTD. Address before: 3, 1 floor, south of the Five Ridges Industrial Zone, six road, Henggang District, Longgang District, Shenzhen 518173, Guangdong, China Patentee before: BestBright Electronics (Shenzhen) Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20111207 |
|
| CX01 | Expiry of patent term |