CN210156415U - Antistatic epitaxial structure - Google Patents
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- CN210156415U CN210156415U CN201921136819.5U CN201921136819U CN210156415U CN 210156415 U CN210156415 U CN 210156415U CN 201921136819 U CN201921136819 U CN 201921136819U CN 210156415 U CN210156415 U CN 210156415U
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Abstract
The utility model discloses an antistatic epitaxial structure, epitaxial structure is including locating buffer layer, N type GaN layer, active layer and the P type GaN layer on the substrate in proper order, a serial communication port, be equipped with the composite bed between N type GaN layer and the active layer, the composite bed includes that a plurality of layers silicon concentration changes the GaN layer, silicon concentration changes the GaN layer including first GaN layer, locate the second GaN layer on the first GaN layer, locate the third GaN layer on the second GaN layer and locate the fourth GaN layer on the third GaN layer, the doping concentration of silicon is zero in the first GaN layer, the doping concentration of silicon is less than the doping concentration of silicon in the third GaN layer in second GaN layer and the fourth GaN layer. The utility model discloses be equipped with the composite bed between N type GaN layer and the active layer, electric current can evenly distributed to whole epitaxial structure after the composite bed to make the electric current can not concentrate on certain region or point, and then improve epitaxial structure's antistatic properties, prevent that the active layer from being punctured by the static.
Description
Technical Field
The utility model relates to a light emitting diode technical field especially relates to an antistatic epitaxial structure.
Background
An LED (Light Emitting Diode) is a semiconductor device that emits Light by using energy released during carrier recombination, and an LED chip has many advantages of low power consumption, pure chromaticity, long service life, small volume, fast response time, energy saving, environmental protection, and the like.
The current LED chip is poor in antistatic capacity due to the fact that an epitaxial structure is weak, static electricity is injected from a U-shaped GaN layer, and other epitaxial structures cannot rapidly and effectively diffuse current, so that the current is concentrated on a small area or a point, and the current in the area is too large, a quantum well is burnt out, and the chip fails. How to improve the antistatic capability of the epitaxial structure has become an urgent technical problem.
Disclosure of Invention
The utility model aims to solve the technical problem that a provide an antistatic epitaxial structure and, effectively improve epitaxial structure's electrostatic capacity, guarantee that voltage is good.
In order to solve the technical problem, the utility model provides an antistatic epitaxial structure, including locating buffer layer, N type GaN layer, active layer and the P type GaN layer on the substrate in proper order, be equipped with the composite bed between N type GaN layer and the active layer, the composite bed includes that a plurality of layers silicon concentration changes the GaN layer, silicon concentration changes the GaN layer including first GaN layer, locate the second GaN layer on the first GaN layer, locate the third GaN layer on the second GaN layer and locate the fourth GaN layer on the third GaN layer, the doping concentration of silicon is zero in the first GaN layer, the doping concentration of silicon is less than the doping concentration of silicon in the third GaN layer in second GaN layer and the fourth GaN layer.
As a modification of the above, the doping concentration of silicon in the second GaN layer is equal to the doping concentration of silicon in the fourth GaN layer.
As an improvement of the scheme, the thickness of the first GaN layer is 10-20 nm, the thickness of the second GaN layer is 10-20 nm, the thickness of the third GaN layer is 100-150 nm, and the thickness of the fourth GaN layer is 10-20 nm.
As an improvement of the scheme, the composite layer comprises 3-9 GaN layers with silicon concentration change, the thickness of the first GaN layer is 13-18 nm, the thickness of the second GaN layer is 12-16 nm, the thickness of the third GaN layer is 110-140 nm, and the thickness of the fourth GaN layer is 14-18 nm.
As an improvement of the scheme, the active layer comprises a transition layer and a quantum well layer, and a composite layer is arranged between the transition layer and the N-type GaN layer.
In an improvement of the above, the concentration of In the transition layer is lower than that of In the quantum well layer, and the thickness of the transition layer is 3-7 nm.
As an improvement of the scheme, a U-shaped GaN layer is arranged between the buffer layer and the N-shaped GaN layer, and a composite layer is arranged between the U-shaped GaN layer and the N-shaped GaN layer.
As an improvement of the scheme, the U-shaped GaN layer is rapidly grown on the buffer layer, and the thickness of the U-shaped GaN layer is 1-2 microns.
Implement the utility model discloses, following beneficial effect has:
the utility model provides an antistatic epitaxial structure, including locating buffer layer, N type gaN layer, active layer and the P type gaN layer on the substrate in proper order, the utility model discloses be equipped with the composite bed between N type gaN layer and the active layer, electric current can evenly distributed to whole epitaxial structure after the composite bed to make the electric current can not concentrate on certain region or point, and then improve epitaxial structure's antistatic ability, prevent that the active layer from being punctured by the static.
The composite layer comprises a plurality of layers of silicon concentration change GaN layers, the silicon concentration change GaN layers comprise a first GaN layer, a second GaN layer arranged on the first GaN layer, a third GaN layer arranged on the second GaN layer and a fourth GaN layer arranged on the third GaN layer, the doping concentration of silicon in the first GaN layer is zero, and the doping concentrations of silicon in the second GaN layer and the fourth GaN layer are smaller than that of silicon in the third GaN layer. The Si doping concentration in the composite layer is gradually increased from 0to the maximum, gradually decreased to the minimum, and sequentially alternated, so that the composite layer can be ensured to diffuse the current, and the voltage is prevented from being too high.
Further, the utility model discloses be equipped with U type GaN layer between buffer layer and the N type GaN layer for fill and level the buffer layer surface and be long flat region, in order to obtain smooth gallium nitride surface, other epitaxial structure of the follow-up growth of being convenient for guarantees epitaxial structure's crystal quality.
Secondly, the utility model discloses be equipped with the composite bed between U type GaN layer and N type GaN layer, because the electric conductivity on N type GaN layer is relatively poor, consequently the electric current can carry out the diffusion once from the composite bed, then carries out the secondary diffusion through the composite bed that sets up between N type GaN layer and transition layer again to improve epitaxial structure's electrostatic capacity, prevent that the active layer from being punctured by the static.
Drawings
Fig. 1 is a schematic view of an epitaxial structure of embodiment 1 of the present invention;
fig. 2 is a schematic view of current diffusion of the epitaxial structure of example 1;
FIG. 3 is a schematic structural diagram of the composite layer of the present invention;
fig. 4 is a schematic view of an epitaxial structure of embodiment 2 of the present invention;
fig. 5 is a schematic view of current diffusion of the epitaxial structure of example 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the utility model provides an antistatic epitaxial structure, which includes a buffer layer 2, an N-type GaN layer 3, an active layer 4 and a P-type GaN layer 5 sequentially disposed on a substrate 1; wherein, a composite layer 6 is arranged between the N-type GaN layer 3 and the active layer 4.
Referring to fig. 2, when ESD test is performed, the current flows from the N-type GaN layer 3 to the active layer 4, and when the current flows through the highly conductive layer (composite layer 6) to the less conductive layer (active layer 4), the current is laterally spread and shunted; after passing through the composite layer, the current can be uniformly distributed to the whole epitaxial structure, so that the current cannot be concentrated on a certain area or point, the antistatic capability of the epitaxial structure is further improved, and the active layer is prevented from being subjected to electrostatic breakdown.
The composite layer 6 is made of gallium nitride and consists of a plurality of layers of gallium nitride, and the concentration of silicon doped in each layer of gallium nitride is different. Specifically, the doping concentration of Si in the composite layer is gradually increased from 0to the maximum, then gradually decreased to the minimum, and the steps are sequentially alternated.
Referring to fig. 3, the composite layer 6 includes a plurality of silicon concentration-varying GaN layers 61 including a first GaN layer 611, a second GaN layer 612 disposed on the first GaN layer 611, a third GaN layer 613 disposed on the second GaN layer 612, and a fourth GaN layer 614 disposed on the third GaN layer 613, the doping concentration of silicon in the first GaN layer 611 is zero, and the doping concentrations of silicon in the second GaN layer 612 and the fourth GaN layer 614 are less than the doping concentration of silicon in the third GaN layer 614. Preferably, the doping concentration of silicon in the second GaN layer is equal to the doping concentration of silicon in the fourth GaN layer.
The higher the doping concentration of Si in the GaN layer is, the higher the conductivity thereof is, and the lower the resistance thereof is; the smaller the doping concentration of Si, the poorer the conductivity and the higher the resistance. Can diffuse the electric current in order to guarantee the composite bed, prevent the voltage too high simultaneously, the utility model discloses silicon doping concentration in to the composite bed has further been injectd. Preferably, the doping concentration of silicon in the second GaN layer is 3-5E +15mor, the doping concentration of silicon in the third GaN layer is 3-5E +19mor, and the doping concentration of silicon in the fourth GaN layer is 3-5E +15 mor. If the doping concentration of silicon in the GaN layer exceeds 5E +19mor, the GaN layer becomes an alloy and does not play a role of doping.
Specifically, the thickness of the first GaN layer is 10-20 nm, the thickness of the second GaN layer is 10-20 nm, the thickness of the third GaN layer is 100-150 nm, and the thickness of the fourth GaN layer is 10-20 nm.
Preferably, the composite layer comprises 3-9 silicon concentration change GaN layers, the thickness of the first GaN layer is 13-18 nm, the thickness of the second GaN layer is 12-16 nm, the thickness of the third GaN layer is 110-140 nm, and the thickness of the fourth GaN layer is 14-18 nm. If the number of the GaN layers with the changed silicon concentration is less than 3, the thickness of the composite layer is less than 390nm, the composite layer is too thin and becomes a superlattice structure, and current cannot be diffused; if the number of the silicon concentration change GaN layers is more than 9, the thickness of the composite layer is more than 1890nm, and after the composite layer is over, the resistance is too large, and the voltage is poor. Preferably, the composite layer comprises 5 silicon concentration-varying GaN layers.
Specifically, the active layer 4 comprises a transition layer and a quantum well layer, and a recombination layer 6 is arranged between the transition layer and the N-type GaN layer 3.
The transition layer is a gradual transition layer which is epitaxially grown from the N-type GaN layer to the quantum well layer and is also a light emitting layer, the thickness of the transition layer is 3-7 nm, the structure of the transition layer is similar to that of the quantum well layer, and the concentration of In the transition layer is lower than that of In the quantum well layer. The transition layer can not be used for improving the brightness of the chip, and can also improve the current expansion of the chip.
Referring to fig. 4, a U-shaped GaN layer 7 is disposed between the buffer layer 2 and the N-shaped GaN layer 3, and a composite layer 6 is disposed between the U-shaped GaN layer 7 and the N-shaped GaN layer 3. The U-shaped GaN layer grows on the buffer layer rapidly, has the thickness of 1-2 mu m, and is used for filling and leveling the surface of the buffer layer into a long and flat area so as to obtain a flat gallium nitride surface, so that other epitaxial structures can grow conveniently in the follow-up process, and the crystal quality of the epitaxial structure is ensured.
Because U type GaN provides the layer for the electron, the utility model discloses be equipped with the composite bed between U type GaN layer and N type GaN layer, participate in figure 5, during the static test, follow U type GaN layer injection current, because the conductivity on N type GaN layer is relatively poor, consequently the current can carry out the diffusion once from composite bed 6, then carries out the secondary diffusion through the composite bed that sets up between N type GaN layer and transition layer again to improve epitaxial structure's electrostatic capacity, prevent that the active layer from being punctured by the static.
The N-type GaN layer grows at high temperature, is doped with Si, has the thickness of 3-6 mu m, and provides a radiation coincidence carrier for the epitaxial structure.
Correspondingly, the utility model also provides a preparation method of antistatic epitaxial structure, include:
forming a buffer layer on a substrate by MOCVD;
forming N-type GaN on the buffer layer;
forming an active layer on the N-type GaN;
forming a P-type GaN layer on the active layer;
it is characterized in that the preparation method is characterized in that,
adjusting the introduction amount of MOCVD silicon, forming a plurality of periods of silicon concentration change GaN layers between the buffer layer and the active layer, wherein the silicon concentration change GaN layers comprise a first GaN layer, a second GaN layer arranged on the first GaN layer, a third GaN layer arranged on the second GaN layer and a fourth GaN layer arranged on the third GaN layer, the doping concentration of the silicon in the first GaN layer is zero, and the doping concentrations of the silicon in the second GaN layer and the fourth GaN layer are smaller than that of the silicon in the third GaN layer.
Specifically, the growth temperature of the silicon concentration variation GaN layer is 1050 +/-20 ℃, and the growth pressure is 130-150 torr.
The utility model discloses only need adjust the volume of letting in of MOCVD's silicon, just can shape a plurality of layers silicon concentration change gaN layer, easy operation need not increase extra equipment, the volume production of being convenient for.
The invention will be further illustrated by the following specific examples
Example 1
The utility model provides an antistatic epitaxial structure, is including locating buffer layer, N type GaN layer, active layer and the P type GaN layer on the substrate in proper order, be equipped with the composite bed between N type GaN layer and the active layer, the composite bed includes 5 layers of silicon concentration change GaN layers, silicon concentration change GaN layer includes first GaN layer, locate the second GaN layer on the first GaN layer, locate the third GaN layer on the second GaN layer and locate the fourth GaN layer on the third GaN layer, the doping concentration of silicon is 0 in the first GaN layer, the doping concentration of silicon is 3E +15mor in the second GaN layer, the silicon doping concentration of third GaN layer is 3E +19mor, the doping concentration of silicon is 3E +15mor in the fourth GaN layer.
Example 2
The utility model provides an antistatic epitaxial structure, is including locating buffer layer, U type GaN layer, N type GaN layer, active layer and the P type GaN layer on the substrate in proper order, be equipped with the composite bed between U type GaN layer and the N type GaN layer, the composite bed includes 5 layers of silicon concentration change GaN layers, silicon concentration change GaN layer includes first GaN layer, locate the second GaN layer on the first GaN layer, locate the third GaN layer on the second GaN layer and locate the fourth GaN layer on the third GaN layer, the doping concentration of silicon is 0 in the first GaN layer, the doping concentration of silicon is 3E +15mor in the second GaN layer, the silicon doping concentration on third GaN layer is 3E +19mor, the doping concentration of silicon is 3E +15mor in the fourth GaN layer.
Example 3
The utility model provides an antistatic epitaxial structure, is including locating buffer layer, U type GaN layer, N type GaN layer, active layer and the P type GaN layer on the substrate in proper order, be equipped with the composite bed between N type GaN layer and the active layer, be equipped with the composite bed between U type GaN layer and the N type GaN layer, the composite bed includes 5 layers of silicon concentration change GaN layers, silicon concentration change GaN layer includes first GaN layer, locates the second GaN layer on the first GaN layer, locates the third GaN layer on the second GaN layer and locates the fourth GaN layer on the third GaN layer, the doping concentration of silicon is 0 in the first GaN layer, the doping concentration of silicon is 3E +15mor in the second GaN layer, the silicon doping concentration of third GaN layer is 3E +19mor, the doping concentration of silicon is 3E +15mor in the fourth GaN layer.
Comparative example 1
An antistatic epitaxial structure comprises a buffer layer, an N-type GaN layer, an active layer and a P-type GaN layer which are sequentially arranged on a substrate.
In examples 1 to 3 and comparative example 1, the structures of the substrate, the buffer layer, the N-type GaN layer, the active layer, and the P-type GaN layer were all the same, and the epitaxial structures of examples 1 to 3 and comparative example 1 were fabricated into chips of the same size to be subjected to a photoelectric test, with the following results:
| serial number | Voltage (V) | Luminance (Mw) | ESD 1KV | ESD 1.5KV | ESD 2KV |
| Comparative example 1 | 3.012 | 20.45 | 100％ | 100％ | 20％ |
| Example 1 | 3.014 | 20.41 | 100％ | 100％ | 80％ |
| Example 2 | 3.013 | 20.41 | 100％ | 100％ | 80％ |
| Example 3 | 3.013 | 20.43 | 100％ | 100％ | 85％ |
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (8)
1. The utility model provides an antistatic epitaxial structure, is including locating buffer layer, N type GaN layer, active layer and the P type GaN layer on the substrate in proper order, its characterized in that, be equipped with the composite bed between N type GaN layer and the active layer, the composite bed includes a plurality of layers silicon concentration change GaN layer, silicon concentration change GaN layer includes first GaN layer, locates the second GaN layer on the first GaN layer, locates the third GaN layer on the second GaN layer and locates the fourth GaN layer on the third GaN layer, the doping concentration of silicon is zero in the first GaN layer, the doping concentration of silicon is less than the doping concentration of silicon in the third GaN layer in second GaN layer and the fourth GaN layer.
2. The antistatic epitaxial structure of claim 1 wherein the doping concentration of silicon in the second GaN layer is equal to the doping concentration of silicon in the fourth GaN layer.
3. The antistatic epitaxial structure of claim 2 wherein the first GaN layer is 10 to 20nm thick, the second GaN layer is 10 to 20nm thick, the third GaN layer is 100 to 150nm thick, and the fourth GaN layer is 10 to 20nm thick.
4. The antistatic epitaxial structure of claim 3 wherein the composite layer comprises 3-9 silicon concentration varying GaN layers, the first GaN layer has a thickness of 13-18 nm, the second GaN layer has a thickness of 12-16 nm, the third GaN layer has a thickness of 110-140 nm, and the fourth GaN layer has a thickness of 14-18 nm.
5. The antistatic epitaxial structure of claim 1 wherein the active layer comprises a transition layer and a quantum well layer with a recombination layer disposed between the transition layer and the N-type GaN layer.
6. The antistatic epitaxial structure of claim 5 wherein the concentration of In the transition layer is lower than the concentration of In the quantum well layer and the thickness of the transition layer is 3 to 7 nm.
7. The antistatic epitaxial structure of claim 5 wherein a U-shaped GaN layer is disposed between the buffer layer and the N-shaped GaN layer, and a composite layer is disposed between the U-shaped GaN layer and the N-shaped GaN layer.
8. The antistatic epitaxial structure of claim 7 wherein the U-shaped GaN layer is grown rapidly on the buffer layer to a thickness of 1-2 μm.
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