CN104022196B - A kind of gallium nitride based LED epitaxial slice preparation method - Google Patents
A kind of gallium nitride based LED epitaxial slice preparation method Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 125
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 40
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 9
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 3
- 238000013021 overheating Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 175
- 239000011777 magnesium Substances 0.000 description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 11
- 229910052749 magnesium Inorganic materials 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000008246 gaseous mixture Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Abstract
The present invention provides a kind of gallium nitride based LED epitaxial slice preparation method, and the extension piece preparation method comprises the following steps：1）Substrate is heat-treated；2）On the substrate through Overheating Treatment, low temperature growth buffer layer, gallium nitride base board layer, n type gallium nitride layer, multi-quantum well active region, low temperature P-type layer, high temperature P-type layer successively from the bottom to top；3）Wherein in the growth course of gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer with high temperature P-type layer, silicon source mode is passed through using closing gallium source in the short time and grows AlxGa1~xN layers, by controlling silicon source to be passed through whether the frequency, ammonia are passed through and silicon source intake can effectively discharge the stress gathered in epitaxial wafer growth course；Electronic barrier layer is formed in low temperature P-type layer, stops that electronics is overshooted to p type island region；And the two-dimensional electron gas for possessing certain distribution gradient is formed in n type gallium nitride layer and high temperature P-type layer structure, so as to improve extension performance.
Description
Technical field
The present invention relates to gallium nitride semiconductor device extension field, more particularly to a kind of gallium nitride based light emitting diode extension
Piece preparation method.
Background technology
Light emitting diode（English is Light Emitting Diode, is abbreviated as LED）It is that a kind of semiconducting solid lights
Device, it can directly convert the electricity into light, when the both ends of semiconductor PN add by the use of semiconductor PN as ray structure
After forward voltage, minority carrier and the majority carrier generation injected in PN junction are compound, release the energy of surplus and cause light
Son transmitting, directly send the light of a variety of colors.Requirement however as the luminescence chip of big efficiency is, it is necessary to the key factor solved
Include lifting luminous intensity, improve brightness uniformity and lifting antistatic effect.
In traditional gallium nitride based diode epitaxial slice structure, AlxGa1~xN layers are as electronic barrier layer or stress release
Layer is all with N-type AlxGa1~xN individual layers or p-type AlxGa1~xN form of single sheet is present, and with the development of technology, this structure is remote
Far from the requirement for meeting high-power LED chip, cause poor chip antistatic capability, CURRENT DISTRIBUTION and light-emitting zone uneven
Even, particularly in large-size epitaxial wafer growth course, epitaxial layer uniformity is largely influenceed, so as to unified epitaxial wafer
The Al of different zonesxGa1~xN thickness in monolayer is uneven, so as to which uniformity of luminance is poor, mean flow rate is relatively low.
The content of the invention
The present invention provides a kind of gallium nitride based LED epitaxial slice preparation method, and technical scheme is as follows：
1）Substrate is heat-treated；
2）On the substrate through Overheating Treatment, low temperature growth buffer layer, gallium nitride base board layer, N-type nitrogen successively from the bottom to top
Change gallium layer, multi-quantum well active region, low temperature P-type layer, high temperature P-type layer；
3）Wherein in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, the short time
Interior closing gallium source, is passed through silicon source and forms AlxGa1~xN laminate structures（0≤x≤1）.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, aluminium
Source is passed through the frequency more than 1, i.e. AlxGa1~xN forms the number of plies and is more than 1.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, often
Al formed in one layerxGa1~xN layer gross thickness is between 0.01 ~ 100nm.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, often
Secondary closing gallium source, the time for being passed through silicon source are 1 ~ 100 second.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, no
With position AlxGa1~xN thickness degree is consistent.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, no
With position AlxGa1~xN thickness degree successively linear increment successively decrease or in sawtooth, rectangle, Gaussian Profile, it is stepped change etc..
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, together
One AlxGa1~xN layers can be consistent in diverse location, aluminium component x values, x values can also be presented between 0 ~ 1 linear, sawtooth,
Sinusoidal, stepped or other changes.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, no
With position AlxGa1~xIn N growth courses, temperature, rotating speed, pressure, ammonia intake, IV/III ratios, carrier gas composition are consistent.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, no
With position AlxGa1~xIn N growth courses, temperature, rotating speed, pressure, ammonia intake, IV/III ratios, carrier gas composition present linear
Increasing or decreasing or in sawtooth, rectangle, Gaussian Profile, it is stepped change etc..
Further, the gas atmosphere being heat-treated to substrate is hydrogen or ammonia or foregoing any combination.
Further, low temperature P-type layer/high temperature P-type layer is gallium nitride or InyGa1-yN layers（0<y≤1）.
Further, in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course,
AlxGa1~xN laminate structures can be only with wherein one layer presence, or exists jointly in multiple layers.
The present invention provides a kind of gallium nitride based LED epitaxial slice preparation method, the advantage is that：
1）In gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, closed in the short time
Close gallium source and be passed through silicon source formation AlxGa1~xN laminate structures, by controlling this action frequency and silicon source intake can be to extension
Aluminium component optimizes adjustment in structure, can effectively discharge between gallium nitride and substrate due to being answered caused by lattice mismatch
Power；
2）The two-dimensional electron gas for possessing certain distribution gradient is formed in n type gallium nitride layer and high temperature P-type layer, makes electric current non-
Whole light-emitting area is often equably extended to, solves electric current jam；
3）By controlling Al in low temperature P-type layerxGa1~xN layer thickness profiles and aluminium component are so as to substituting electronic barrier layer
（EBL）, due to the Al of such a method formationxGa1~xN thickness degree is uniform, especially make large-size epitaxial wafer uniformity of luminance obtain compared with
It is big to improve.
Above by proposing a kind of preparation method of new aluminium element incorporation nitride diode epitaxial wafer, it is intended to solve into
One step stress release, lifting epitaxial wafer antistatic effect and luminous intensity and uniformity of luminance, were prepared in large-size epitaxial wafer
Surface is particularly evident in journey.
Brief description of the drawings
Fig. 1 is the gallium nitride based LED epitaxial slice structure sectional view in the embodiment of the present invention 1.
Fig. 2 is the gallium nitride base board Rotating fields enlarged diagram in Fig. 1.
Fig. 3 is the n type gallium nitride Rotating fields enlarged diagram in Fig. 1.
Fig. 4 is the low temperature P-type layer structure enlargement diagram in Fig. 1.
Fig. 5 is the high temperature P-type layer structure enlargement diagram in Fig. 1.
Fig. 6 is gallium nitride base board layer, the N-type nitrogen of gallium nitride based LED epitaxial slice structure in the embodiment of the present invention 1
Change gallium layer, low temperature P-type layer, high temperature P-type layer growth schematic diagram.
The gallium nitride base board layer of gallium nitride based LED epitaxial slice structure, N-type nitridation in Fig. 7 embodiment of the present invention 2
Gallium layer, low temperature P-type layer, high temperature P-type layer growth schematic diagram.
Indicated in figure：
1：Substrate；2：Nitride buffer layer；3：Gallium nitride base board layer；4：N type gallium nitride layer；5：Multi-quantum well active region；
6：Low temperature P-type layer；7：High temperature P-type layer；A1~An：Intrinsic gallium nitride in gallium nitride base board layer；B1~B2n：In gallium nitride base board layer
AlxGa1~xN layers；C1~Cn：Silicon gallium nitride layer is mixed in n type gallium nitride layer；D1~Dn：Silicon Al is mixed in n type gallium nitride layerxGa1~ xN layers；E1~En：Magnesium gallium nitride or In are mixed in low temperature P-type layeryGa1-yN layers；F1~Fn：Magnesium Al is mixed in low temperature P-type layerxGa1~xN
Layer；G1~Gn：Magnesium gallium nitride or In are mixed in high temperature P-type layeryGa1-yN layers；H1~Hn：Magnesium Al is mixed in high temperature P-type layerxGa1~xN layers；
More than, n is natural number, and n >=1.
Embodiment
To make the present invention that its substantive distinguishing features and its practicality having be more readily understood, below just with reference to accompanying drawing to this hair
Bright some specific embodiments are described in further detail, but it should be noted that description below in relation to embodiment and explanation pair
The scope of the present invention is not limited in any way.
Embodiment 1
Fig. 1 ~ 6 make a kind of schematic diagram of gallium nitride based LED epitaxial slice for the present invention, are prepared in the present embodiment
The epitaxial wafer of acquisition includes successively from the bottom to top：（1）Sapphire Substrate 1；（2）Low-temperature nitride cushion 2, nitridation can be included
Gallium or aluminium nitride or a combination of both, thickness is between 10 ~ 100nm；（3）Gallium nitride base board layer 3, thickness 300 ~ 7000nm it
Between, preferably 3500nm；（4）N type gallium nitride layer 4, wherein doped source are silane, and doping concentration is 1 × 1018~2×1019cm-3It
Between, preferably 1.2 × 1019cm-3；（5）Multi-quantum well active region 5, with InyGa1-yN as well layer, with gallium nitride or AlxGa1~xN or
The two combination is used as barrier layer, wherein barrier layer thickness between 50 ~ 150nm, well layer thickness is between 1 ~ 20nm；（6）Low temperature P-type layer
6, by mixing Mg gallium nitride layers or mixing Mg InyGa1-yN layers（0<y≤1）Form, preferred gallium nitride, thickness between 50 ~ 200nm,
It is preferred that 110nm, growth temperature is between 600 ~ 850 DEG C, preferably 750 DEG C；（7）High temperature P-type layer 7, wherein doped source are magnesium source, by
Gallium nitride or InyGa1-yN layers（0<y≤1）Form, preferably gallium nitride.
In the growth course of the gallium nitride base board layer, 100 ~ 500torr of chamber pressure is set；Growth temperature 800 ~
1200 DEG C, using H2With N2Gaseous mixture is as carrier gas；Pass first into ammonia and gallium source growth 10 ~ 5000nm fixed thickness A1, then
Gallium source and ammonia are closed, is passed through silicon source growth B1, the preferably time is 1 ~ 100 second, continues closing silicon source and is passed through ammonia and the life of gallium source
Long gallium nitride A2, so repeatedly until growing to An+1, n is between 5 ~ 20.
In n type gallium nitride layer growth course, the preferred 100 ~ 500torr of chamber pressure of pressure, growth temperature 800 are set
~ 1200 DEG C, using H2With N2Mixed gas is as carrier gas；It is passed through ammonia and gallium source growth 10 ~ 5000nm fixed thickness C1, doping
Source is silane, sets doping concentration 1 × 1018~2×1019cm-3, it is then switched off gallium source, ammonia and silane and is passed through silicon source growth D1,
It is preferred that the time is 1 ~ 100 second, continues pass silicon source and be passed through ammonia and gallium source growing gallium nitride C2, so repeatedly until growing to Cn+1,
N is between 5 ~ 20.
In low temperature P-type layer growth course, the setting preferred chamber pressure 100-300torr of pressure, growth temperature 500 ~
800 DEG C, using H2With N2Gaseous mixture is as carrier gas；It is passed through ammonia and gallium source or gallium source and indium source 10 ~ 5000nm of mixed growth is solid
Determine thickness E1, doped source is two luxuriant magnesium, sets doping concentration 3 × 1018~1×1019cm-3, it is then switched off gallium source（Or including indium
Source）, ammonia and two luxuriant magnesium be passed through silicon source growth F1, the preferably time is 1 ~ 100 second, continues closing silicon source and is passed through gallium source（Or including
Indium source）, ammonia and two luxuriant magnesium growing gallium nitride E2, so repeatedly until growing to En+1, n is between 5 ~ 20.
In high temperature P-type layer growth course, the setting preferred chamber pressure 100-300torr of pressure, growth temperature 800 ~
1100 DEG C, using H2With N2Gaseous mixture is as carrier gas；It is passed through ammonia and gallium source growth 10 ~ 5000nm fixed thickness G1, doped source is
Two luxuriant magnesium, set doping concentration 5 × 1018~3×1019cm-3, it is then switched off gallium source, ammonia and two luxuriant magnesium and is passed through silicon source growth H1,
Preferably 1 ~ 100 second, continue closing silicon source and be passed through ammonia, gallium source, two luxuriant magnesium growing gallium nitride layer G2, so repeatedly until growth
To Gn+1, n is between 5 ~ 20.
As the specific embodiment of the present invention, silicon source mode is passed through using closing gallium source in the short time and grown
AlxGa1~xN laminate structures, stress between abundant release liners and gallium nitride material, formed in n type gallium nitride layer, high temperature P-type layer
Uniform multiple two-dimensional electron gas, makes the electric current of same epitaxial wafer diverse location more uniform, is formed in low temperature P-type layer
AlxGa1~xN laminate structures can substitute electronic barrier layer（EBL）, stop electronics overshoot, reduce hole injection barrier.
Deformed as one embodiment in the present embodiment, in the growth course of gallium nitride base board layer and low temperature P-type layer,
Silicon source flow gradually reduces from first time to last time, i.e., in B1To Bn、F1To FnX values are presented by reduction in layer, are being nitrogenized
Stress is discharged in gallium substrate layer and lifts the lattice quality close to active region material simultaneously, in the growth course of low temperature P-type layer
The middle blocking capability improved to electronics.
As second embodiment deformation in the present embodiment, gallium nitride base board layer, low temperature P-type layer growth course in,
Silicon source is passed through frequency from high to low, ensures there is a greater number Al in gallium nitride base board layer bottom, low temperature P-type layer bottomxGa1~xN
Layer, i.e. A1To An、E1To EnThickness gradually increases, so as to be played a greater role in release stress and electronic blocking.
As the 3rd embodiment deformation in the present embodiment, gallium nitride base board layer, low temperature P-type layer growth course in,
Silicon source, which is passed through the time, gradually to be reduced, increase gallium nitride base board layer, low temperature P-type layer bottom AlxGa1~xN thickness degree, i.e. B1To Bn、F1
To FnThickness degree gradually reduces, so as to be played a greater role in release stress and electronic blocking.
Embodiment 2
As shown in fig. 7, be different from embodiment 1, the present embodiment gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer,
Gallium source is simply turned off in the growth course of high temperature P-type layer, when silicon source is passed through（Or including indium source）, ammonia keep be passed through state, so
Al can be formed in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layerxGa1~xThe aluminium component x values of N layers are in
Now first increased to after 1 from 0 be decreased to 0 structure, such a structure makes Bn、Dn、Fn、HnIn aluminium component greatly increase, thus strengthen
Stress release effect in gallium nitride base board layer, and in n type gallium nitride layer and high temperature P-type layer higher potential barrier is formed,
Current expansion is enhanced, the electronic blocking effect in low temperature P-type layer equally can significantly be strengthened.
Deformed as one embodiment in the present embodiment, gallium nitride base board layer, low temperature P-type layer growth course in,
Silicon source flow gradually reduces from first time to last time, i.e., in B1To Bn、F1~FnThe gradual step-down of x values in layer, in gallium nitride base
Stress is discharged in flaggy and lifts the lattice quality close to active region material simultaneously, is carried in the growth course of low temperature P-type layer
The high blocking capability to electronics.
As second embodiment deformation in the present embodiment, gallium nitride base board layer, low temperature P-type layer growth course in,
Silicon source is passed through frequency from high to low, ensures there is a greater number Al in gallium nitride base board layer bottom, low temperature P-type layer bottomxGa1~xN
Layer, i.e. A1To An、E1To EnThickness gradually increases, so as to be played a greater role in release stress and electronic blocking.
As the 3rd embodiment deformation in the present embodiment, gallium nitride base board layer, low temperature P-type layer growth course in,
Silicon source is passed through the time by more at least, increasing gallium nitride base board layer, low temperature P-type layer bottom AlxGa1~xN thickness degree, i.e. B1To Bn、F1
To FnThickness degree is by reduction, so as to be played a greater role in release stress and electronic blocking.
It should be noted that in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course
In, AlxGa1~xN laminate structures can be formed only in gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer
Any one layer, can also any multilayer formed therein, the Al formed in any one layer whereinxGa1~xN layer total thicknesses
Degree is between 0.01nm ~ 100nm.
In gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, closed in the short time
Gallium source is passed through silicon source and forms AlxGa1~xN laminate structures, by controlling this action frequency and silicon source intake can be to epitaxy junction
Aluminium component optimizes adjustment in structure, can effectively discharge between epitaxial layer of gallium nitride and substrate due to produced by lattice mismatch
Stress；Al is formed in n type gallium nitride layer or high temperature P-type layerxGa1~xN layers, the two dimension of certain distribution gradient can also be obtained
Electron gas, electric current is fairly evenly extended to whole light-emitting area, solve electric current jam；Formed in low temperature P-type layer
Thickness distribution and the controllable Al of aluminium componentxGa1~xN layers, it can even more substitute electronic barrier layer（EBL）, stop electronics overshoot,
Reduce hole injection barrier, and the Al that this method is formedxGa1~xN thickness degree is uniform, especially makes large-size epitaxial wafer luminous uniform
Property is greatly improved.
The preferred embodiment of the present invention is the foregoing is only, is not intended to limit the invention, for the technology of this area
For personnel, the present invention can have various changes, retouching and change.Within the spirit and principles of the invention, that is made appoints
What modification, equivalent substitution, improvement are accordingly to be regarded as within protection scope of the present invention.
Claims (11)
1. a kind of gallium nitride based LED epitaxial slice preparation method, including step：
Substrate is heat-treated；
After heat treatment on substrate, low temperature growth buffer layer, gallium nitride base board layer, n type gallium nitride layer, MQW are active successively
Area, low temperature P-type layer, high temperature P-type layer, wherein low temperature P-type layer/high temperature P-type layer are gallium nitride or InyGa1-yN layers（0<y≤1）；
It is characterized in that：In the gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course,
Using gallium source is closed, it is passed through silicon source and forms AlxGa1~xN laminate structures, wherein 0≤x<1, by controlling this action frequency and aluminium
Source intake optimizes adjustment to aluminium component in epitaxial structure, obtains the gallium nitride based LED epitaxial slice.
A kind of 2. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：In nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, silicon source is passed through the frequency more than 1, i.e.,
AlxGa1~xN forms the number of plies and is more than 1.
A kind of 3. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：In nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, AlxGa1~xN laminate structures are formed at nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer it is any one or more layers.
A kind of 4. gallium nitride based LED epitaxial slice preparation method according to claim 3, it is characterised in that：In nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, wherein formed in any one layer
AlxGa1~xN layer gross thickness is between 0.01nm ~ 100nm.
A kind of 5. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：Every time
Gallium source is closed, the time for being passed through silicon source is 1 ~ 100 second.
A kind of 6. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：In nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, diverse location AlxGa1~xN thickness degree is protected
Hold consistent.
A kind of 7. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：In nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, diverse location AlxGa1~xN thickness degree according to
Sublinear increasing or decreasing or in sawtooth, rectangle, Gaussian Profile, stepped.
A kind of 8. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：In nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, same AlxGa1~xN layers are in different positions
Put, aluminium component x values are consistent, or linear, sawtooth, sine, stepped change is presented in x values between 0 ~ 1.
A kind of 9. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：In nitrogen
Change in gallium substrate layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, diverse location AlxGa1~xN layers grew
Cheng Zhong, temperature, rotating speed, pressure, ammonia intake, IV/III ratios, carrier gas composition are consistent.
A kind of 10. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：
In gallium nitride base board layer, n type gallium nitride layer, low temperature P-type layer, high temperature P-type layer growth course, diverse location AlxGa1~xN layers grow
During, temperature, rotating speed, pressure, ammonia intake, IV/III ratios, carrier gas composition are presented linear increment or successively decreased or in saw
Tooth, rectangle, Gaussian Profile, stepped change.
A kind of 11. gallium nitride based LED epitaxial slice preparation method according to claim 1, it is characterised in that：It is right
The gas atmosphere that substrate is heat-treated is hydrogen or ammonia or foregoing any combination.
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