CN216162688U - High-fundamental-frequency quartz chip and wafer based on photoetching process - Google Patents
High-fundamental-frequency quartz chip and wafer based on photoetching process Download PDFInfo
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- CN216162688U CN216162688U CN202122215949.1U CN202122215949U CN216162688U CN 216162688 U CN216162688 U CN 216162688U CN 202122215949 U CN202122215949 U CN 202122215949U CN 216162688 U CN216162688 U CN 216162688U
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Abstract
The utility model discloses a high fundamental frequency quartz chip based on a photoetching process and a wafer, wherein the quartz chip comprises a substrate, an electrode bonding pad, a first electrode and a second electrode; the substrate comprises a pad area, a transition area, an oscillation area and a groove area, wherein the thickness of the oscillation area is smaller than that of the pad area, and the pad area is connected with the oscillation area through the transition area; the electrode pads are respectively arranged on two sides of the pad area, a first electrode and a second electrode are respectively arranged on two sides of the oscillation area, and the first electrode and the second electrode are respectively electrically connected with the electrode pads on the same side; the groove area is arranged on the surface of the oscillation area and surrounds the periphery of the first electrode or the second electrode. According to the utility model, the whole size of the wafer is reduced by thinning the oscillation area, and the wafer has better mechanical strength by matching with the smooth transition of the inclined plane structure of the transition area; and the periphery of the electrode is provided with a groove area with proper depth, so that the thickness of part of the area of the oscillation area is reduced, and the electrode can better adapt to high-frequency work while keeping better strength.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a high-fundamental-frequency quartz chip and a wafer based on a photoetching process.
Background
With the development of information technology, the electronic device quartz crystal device for frequency generation and frequency control in the communication field develops towards small size, high frequency and high stability. In order to meet the requirements of intelligent wearing application, the external dimension of a quartz crystal device is 1-2 mm, the thickness is 0.3-0.7 mm, and the dimension of a quartz wafer is required to be below 1 mm; according to an empirical frequency formula f of the AT-cut quartz crystal device, wherein f is 1670/t, t is the thickness of the quartz crystal wafer, the quartz crystal wafer is thinner as the frequency is higher, and the thickness of the quartz crystal wafer with the frequency of more than 100MHz is smaller than 16 mu m; in order to obtain high stability of the quartz crystal device, the surface of the quartz crystal wafer is required to be smooth and flat, and the roughness of the surface reaches below 1 nm.
The quartz crystal is a brittle material with high hardness and easy breakage, the quartz crystal is small in size, a high-frequency quartz wafer is difficult to finish by adopting a traditional machining mode, the manufacturing of the quartz wafer is finished by adopting a photoetching-based MEMS micro-nano processing technology, and then a quartz crystal device with small size, high frequency and high stability is produced. The thickness of the quartz chip is reduced and the strength of the quartz chip is deteriorated when the frequency of the quartz chip is increased, and particularly if the quartz chip is too thin, the transportation and cleaning during the processing process become difficult, and a new structure needs to be provided.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a high-fundamental-frequency quartz chip and a wafer based on a photoetching process, which are used for solving the problem that the strength of the high-frequency quartz chip in the prior art is poor after the thickness is reduced.
In order to solve the technical problem, the utility model provides a high fundamental frequency quartz wafer based on a photoetching process, which comprises a substrate, an electrode bonding pad, a first electrode and a second electrode; the substrate comprises a pad area, a transition area, an oscillation area and a groove area, wherein the thickness of the oscillation area is smaller than that of the pad area, and the pad area is connected with the oscillation area through the transition area; the electrode pads are respectively arranged on two sides of the pad area, a first electrode and a second electrode are respectively arranged on two sides of the oscillation area, and the first electrode and the second electrode are respectively electrically connected with the electrode pads on the same side; the groove area is arranged on the surface of the oscillation area and surrounds the periphery of the first electrode or the second electrode.
The two ends of each surface of the pad area are respectively provided with an electrode pad, the first electrode is electrically connected with one electrode pad at one end of the same surface, and the second electrode is electrically connected with the other electrode pad at the other end of the same surface.
Preferably, one side of the transition area is of a plane structure, and the other side of the transition area is of an inclined structure.
Preferably, the cross section of the groove region is of a V-shaped structure, and the ratio of the depth of the groove region to the thickness of the oscillation region is 1: (5-10).
The high fundamental frequency quartz wafer based on the photoetching process further comprises a pair of connecting pins, and each connecting pin is electrically connected with an electrode bonding pad at one end of a bonding pad area.
In order to solve the technical problem, the utility model also provides a high-fundamental-frequency quartz wafer based on the photoetching process, which comprises the high-fundamental-frequency quartz wafer based on the photoetching process and a wafer, wherein the wafer is provided with a plurality of hollowed-out grooves, and each high-fundamental-frequency quartz wafer based on the photoetching process is correspondingly arranged in one groove.
The high-fundamental-frequency quartz wafer based on the photoetching process is electrically connected with the wafer through connecting pins.
The high-fundamental-frequency quartz wafer based on the photoetching process further comprises a pair of wafer positioning holes and a pair of alignment pieces, wherein the pair of wafer positioning holes are arranged on one axis and close to the edge of the axis, and the pair of alignment pieces are arranged on the other axis and close to the edge of the axis, on two vertical axes passing through the center of the wafer; the wafer positioning holes are correspondingly aligned with the wafer processing base, and the alignment piece is correspondingly aligned with the mask plate.
The utility model has the beneficial effects that: the utility model provides a high fundamental frequency quartz chip and a wafer based on a photoetching process, which are different from the condition of the prior art, the whole size of the chip is reduced by thinning an oscillation area, and the chip has better mechanical strength by matching with the smooth transition of an inclined plane structure of a transition area; and the periphery of the electrode is provided with a groove area with proper depth, so that the thickness of part of the area of the oscillation area is reduced, and the electrode can better adapt to high-frequency work while keeping better strength.
Drawings
FIG. 1 is a top view of a structure of one embodiment of a high fundamental frequency quartz wafer based on a photolithography process according to the present invention;
FIG. 2 is a cross-sectional view taken along A-A of FIG. 1;
FIG. 3 is a cross-sectional view taken along line B-B of FIG. 1;
FIG. 4 is a schematic structural diagram of an embodiment of a high fundamental frequency quartz wafer based on a photolithography process according to the present invention;
FIG. 5 is a connection structure diagram of a high-fundamental-frequency quartz wafer and a wafer based on a photolithography process in the present invention;
in the figure: the structure comprises a substrate 1, a pad area 11, a transition area 12, an oscillation area 13, a groove area 14, an electrode pad 2, a first electrode 3, a second electrode 4, a connecting pin 5, a wafer 6, a wafer positioning hole 7 and a contraposition part 8.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1 to 3, the high fundamental frequency quartz wafer based on the photolithography process of the present invention includes a substrate 1, an electrode pad 2, a first electrode 3 and a second electrode 4, wherein the substrate 1 includes a pad region 11, a transition region 12, an oscillation region 13 and a groove region 14; the thickness of the oscillation area 13 is smaller than that of the pad area 11, and the pad area 11 and the oscillation area 13 are connected through a transition area 12; the electrode pads 2 are respectively arranged on two sides of the pad area 11, the first electrode 3 and the second electrode 4 are respectively arranged on two sides of the oscillation area 13, and the first electrode 3 and the second electrode 4 are respectively electrically connected with the electrode pads 2 on the same side; the groove region 14 is disposed on the surface of the oscillation region 13 and surrounds the periphery of the first electrode 3 or the second electrode 4. The components of the high fundamental frequency quartz wafer based on the photolithography process described above are described in detail below.
Specifically, the electrode pads 2 are disposed at two ends of each surface of the pad region 11, the first electrode 3 is electrically connected to one of the electrode pads 2 on the same surface, and the second electrode 4 is electrically connected to the other electrode pad 2 on the same surface.
Specifically, one side of the transition region 12 is of a planar structure, and the other side of the transition region 12 is of an inclined structure; in the embodiment, the thickness of the oscillation area is smaller than that of the pad area through a thinning process, and the oscillation area can be thinned in a single-side exposure and single-side corrosion mode; the transition region 12 connecting the two is set to be in inclined transition, so that the whole structure of the wafer can keep better strength, and the wafer can be effectively prevented from being damaged in the welding process.
Specifically, the cross section of the groove region 14 is a V-shaped structure, and the ratio of the depth of the groove region 14 to the thickness of the oscillation region is preferably 1: (5-10); it can be known from the empirical formula of the frequency of the quartz crystal device that the frequency is inversely proportional to the thickness of the wafer, and the groove region 14 is provided to reduce the overall equivalent thickness of the wafer oscillation region 13, so that the wafer oscillation region can adapt to the high-frequency operation, while the depth of the groove region 14 needs to be set within a proper range, and should not be too deep, so that the wafer oscillation region can still maintain a good strength.
Specifically, the high fundamental frequency quartz wafer based on the photolithography process further includes a pair of connection pins 5, and each connection pin 5 is electrically connected to the electrode pad 2 at one end of a pad region 11.
Referring to fig. 4-5, the high-fundamental-frequency quartz wafer based on the photolithography process of the present invention includes the high-fundamental-frequency quartz chip based on the photolithography process and a wafer 6, wherein the wafer 6 is provided with a plurality of hollow-out grooves, each high-fundamental-frequency quartz chip based on the photolithography process is correspondingly disposed in one groove, and the high-fundamental-frequency quartz chip based on the photolithography process is electrically connected to the wafer 6 through a connecting pin 5. In the embodiment, the wafer adopts a standard wafer, which is different from a conventional silicon wafer, the quartz wafer is of an upper electrode structure and a lower electrode structure, and after the wafer on the wafer is manufactured, the wafer is broken off from the wafer in a breaking mode and then is moved into the ceramic base by the suction nozzle; the wafer needs a hollow structure, and each quartz wafer is connected with the wafer by two connecting pins; the quartz wafer can be thinned to the thickness within the set frequency range only by removing the protective layer of the oscillation area through the exposure and development process and etching the single surface of the oscillation area, so that the strength of the whole wafer can be ensured, wherein the adopted photoetching process is the same as the traditional photoetching process, and therefore the details are not repeated. The thickness of the oscillation region of the quartz wafer and the etching depth of the groove region need to be adaptively set according to the actual frequency setting requirement, which is not limited herein.
In addition, the high-fundamental-frequency quartz wafer based on the photoetching process further comprises a pair of wafer positioning holes 7 and a pair of alignment pieces 8, wherein on two vertical axes passing through the center of the wafer 6, one axis is provided with the pair of wafer positioning holes 7 close to the edge, and the other axis is provided with the pair of alignment pieces 8 close to the edge; the wafer positioning hole 7 is aligned with the wafer processing base correspondingly, and the aligning piece 8 is aligned with the mask plate correspondingly, so that the quartz chip can be aligned with the wafer processing base and the mask plate simultaneously, and photoetching processing is facilitated.
The utility model provides a high fundamental frequency quartz chip and a wafer based on a photoetching process, which are different from the condition of the prior art, the whole size of the chip is reduced by thinning an oscillation area, and the chip has better mechanical strength by matching with the smooth transition of an inclined plane structure of a transition area; and the periphery of the electrode is provided with a groove area with proper depth, so that the thickness of part of the area of the oscillation area is reduced, and the electrode can better adapt to high-frequency work while keeping better strength.
The above-mentioned embodiments only express the embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the utility model. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (6)
1. A high fundamental frequency quartz wafer based on a photoetching process is characterized by comprising a substrate, an electrode pad, a first electrode and a second electrode;
the substrate comprises a pad area, a transition area, an oscillation area and a groove area, wherein the thickness of the oscillation area is smaller than that of the pad area, and the pad area is connected with the oscillation area through the transition area;
the electrode pads are respectively arranged on two sides of the pad area, the first electrode and the second electrode are respectively arranged on two sides of the oscillation area, and the first electrode and the second electrode are respectively and electrically connected with the electrode pads on the same side;
the groove area is arranged on the surface of the oscillation area and surrounds the periphery of the first electrode or the second electrode;
the two ends of each surface of the welding disc area are respectively provided with the electrode welding disc, the first electrode is electrically connected with the electrode welding disc at one end of the same surface, and the second electrode is electrically connected with the electrode welding disc at the other end of the same surface;
the high fundamental frequency quartz wafer based on the photoetching process further comprises a pair of connecting pins, and each connecting pin is electrically connected with the electrode bonding pad at one end of the bonding pad area.
2. The high fundamental frequency quartz wafer based on the photolithography process as claimed in claim 1, wherein one side of the transition region has a planar structure and the other side of the transition region has a slanted structure.
3. The high fundamental frequency quartz wafer based on the photolithography process as claimed in claim 1, wherein the cross section of the recessed region has a V-shaped structure, and a ratio of a depth of the recessed region to a thickness of the oscillation region is 1:5 to 1: 10.
4. A high-fundamental-frequency quartz wafer based on a photoetching process, which is characterized by comprising a plurality of high-fundamental-frequency quartz chips based on the photoetching process as claimed in any one of claims 1 to 3 and a wafer, wherein the wafer is provided with a plurality of hollowed-out grooves, and each high-fundamental-frequency quartz chip based on the photoetching process is correspondingly arranged in one groove.
5. The lithography-based high-fundamental-frequency quartz wafer according to claim 4, wherein the lithography-based high-fundamental-frequency quartz chips are electrically connected with the wafer through connecting pins.
6. The high-fundamental-frequency quartz wafer based on the lithography process as claimed in claim 4, wherein the high-fundamental-frequency quartz wafer based on the lithography process further comprises a pair of wafer positioning holes and a pair of alignment members, wherein on two vertical axes passing through the center of the wafer, one axis is provided with a pair of the wafer positioning holes near the edge, and the other axis is provided with a pair of the alignment members near the edge;
the wafer positioning holes are aligned with the wafer processing base correspondingly, and the alignment piece is aligned with the mask plate correspondingly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122215949.1U CN216162688U (en) | 2021-09-13 | 2021-09-13 | High-fundamental-frequency quartz chip and wafer based on photoetching process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122215949.1U CN216162688U (en) | 2021-09-13 | 2021-09-13 | High-fundamental-frequency quartz chip and wafer based on photoetching process |
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| CN216162688U true CN216162688U (en) | 2022-04-01 |
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| CN202122215949.1U Active CN216162688U (en) | 2021-09-13 | 2021-09-13 | High-fundamental-frequency quartz chip and wafer based on photoetching process |
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- 2021-09-13 CN CN202122215949.1U patent/CN216162688U/en active Active
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