WO2017012347A1 - Piezoelectric quartz wafer with single convex structure - Google Patents
Piezoelectric quartz wafer with single convex structure Download PDFInfo
- Publication number
- WO2017012347A1 WO2017012347A1 PCT/CN2016/074953 CN2016074953W WO2017012347A1 WO 2017012347 A1 WO2017012347 A1 WO 2017012347A1 CN 2016074953 W CN2016074953 W CN 2016074953W WO 2017012347 A1 WO2017012347 A1 WO 2017012347A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- quartz wafer
- piezoelectric quartz
- central component
- convex structure
- wafer
- Prior art date
Links
- 239000010453 quartz Substances 0.000 title claims abstract description 76
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 230000000694 effects Effects 0.000 claims abstract description 10
- 230000003071 parasitic effect Effects 0.000 claims abstract description 5
- 230000001681 protective effect Effects 0.000 claims description 23
- 235000012431 wafers Nutrition 0.000 abstract description 43
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
- H03H9/215—Crystal tuning forks consisting of quartz
Definitions
- the present invention relates to the technical field of piezoelectric quartz wafer construction, and more particularly to a piezoelectric quartz wafer having a single convex structure.
- a quartz crystal resonator is generally composed of a piezoelectric quartz wafer and a package outer casing, wherein the piezoelectric quartz crystal wafer is rectangular or circular, and the outer casing material is ceramic, glass or the like.
- the electrodes on the upper and lower sides of the piezoelectric quartz wafer are vapor-deposited, and the electrodes are connected to the pedestal pins in the package casing through the leads of the sealed package.
- the AC voltage can be connected to the upper and lower electrodes of the quartz wafer through the pins, causing the quartz wafer to have an inverse piezoelectric effect, which causes oscillation.
- Quartz crystal resonators are widely used in the electronics industry such as mobile electronic devices, mobile phones, and mobile communication devices due to their frequency accuracy and stability.
- Quartz crystal resonators have a lower resonance frequency.
- the edge effect of the quartz wafer is weakened, and the shape of the quartz wafer needs to be changed.
- the barrel grinding method is used to change the shape of the quartz wafer, that is, the biconvex surface structure.
- the cost has always been high. Therefore, the technology of quartz wafers needs to be improved.
- the object of the present invention is to overcome the shortcomings of the prior art, to provide a low cost, can be used for miniaturizing the mass production of quartz wafers, reducing the parasitic vibration generated by the edges, and enhancing the trapping effect of the center of the quartz wafer, Piezoelectric quartz wafer with a single convex structure for increasing the uniformity of the product.
- a piezoelectric quartz having a single convex structure a wafer comprising a central member, a protective frame and a connecting portion, wherein the central member and the protective frame are both rectangular, the cavity is provided in the protective frame, and the central member is disposed in the cavity, and the central member is disposed in the cavity
- the top surface is provided with a boss which can reduce the parasitic vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer.
- the two long sides of the protective frame form a through groove A between the two long sides of the central member, and the protection is provided.
- a through groove B is formed between the two short sides of the frame and the two short sides of the central member, and the through groove A communicates with the through groove B, and any short side of the protective frame and the central member pass through the connecting portion Connected, the connecting portion is disposed in any one of the through slots B.
- the boss is a circular boss, a rectangular boss or a trapezoidal boss.
- the connecting portion has a shape of a rectangle or a trapezoid.
- the piezoelectric quartz wafer has a length of 0.8 to 3.2 mm.
- the piezoelectric quartz wafer has a width of 0.6 to 2.5 mm.
- the material of the central member, the protective frame and the connecting portion are all quartz.
- the present invention has the following advantages: (1) The top surface of the center member of the present invention is provided with a boss which can attenuate the spurious vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer. (2) The present invention can be used for mass production of miniaturized quartz wafers, greatly improving the manufacturing efficiency of wafers and crystals, and improving the consistency. (3) When the protective frame is subjected to external forces, the force is not transmitted to the central member, thus protecting the central member well.
- Embodiment 1 is a schematic structural view of Embodiment 1 of the present invention.
- Figure 2 is a plan view of Figure 1;
- Figure 3 is a cross-sectional view taken along line A-A of Figure 2;
- Figure 4 is a bottom view of Figure 1;
- FIG. 5 is a top view of a product based on a quartz substrate processed by a manufacturing process according to an embodiment of the present invention
- Figure 6 is a bottom view of Figure 5;
- Figure 7 is a schematic structural view of a second embodiment of the present invention
- Figure 8 is a plan view of Figure 7;
- Figure 9 is a bottom view of Figure 7;
- FIG. 10 is a top view of a product based on a quartz substrate processed by a manufacturing process according to Embodiment 2 of the present invention.
- Figure 11 is a bottom view of Figure 10
- a piezoelectric quartz wafer having a single convex structure the quartz wafer adopting an AT cut type, which is generally applied to a quartz crystal resonator, wherein a long side of the wafer is parallel to The X axis, the X axis is the electric axis of the quartz crystal, the short side is parallel to the Z' axis, and the thickness direction is parallel to the Y' axis. It is not excluded that the long side of the quartz wafer is parallel to the Z' axis, the width is parallel to the X axis, and the thickness direction is parallel to the Y' axis.
- the piezoelectric quartz wafer includes a central member 1, a protective frame 2 and a connecting portion 3.
- the central member 1, the protective frame 2 and the connecting portion 3 are made of quartz, and the central member 1 and the protective frame 2 are both rectangular.
- the protective frame 2 functions as a support and a package.
- the protective frame 2 is provided with a cavity.
- the central component 1 is disposed in the cavity, and the top surface of the central component 1 is provided with a weakened edge. a parasitic vibration, and a boss 4 capable of enhancing the trapping effect at the center of the quartz wafer.
- the two long sides of the protective frame 2 and the two long sides of the central member 1 are formed with a through groove A5, and the two short sides of the protective frame 2 A through groove B6 is formed between the edge and the two short sides of the central member 1, and the through groove A5 communicates with the through groove B6, and the through groove A5 and the through groove B6 are formed by chemically etching or physically dividing the quartz crystal material.
- any one of the short sides of the protective frame 2 is connected to the central member 1 via a connecting portion 3, and the connecting portion 3 is disposed in any one of the through grooves B6.
- the boss 4 is a circular boss, a rectangular boss or a trapezoidal boss.
- the boss in this embodiment is a rectangular boss.
- the shape of the connecting portion 3 is rectangular or trapezoidal, and the connecting portion 3 in the present embodiment has a rectangular shape.
- the piezoelectric quartz wafer has a length of 0.8 to 3.2 mm, and the length in the embodiment is 1.6 mm, and the piezoelectric quartz wafer has a width of 0.6 to 2.5 mm, and the width in the present example is 1.2. Mm, the quartz wafer
- the resonant frequency of the quartz wafer in this example is between 8 MHz and 70 MHz.
- a piezoelectric quartz wafer having a single convex structure is processed as follows:
- a lithographic anti-etching protective layer ER having a uniform thickness is formed on the surface of the quartz substrate 7 by spin coating or spraying, and then lithographically exposed on the lithographic anti-etching protective layer ER. Forming a surface to be etched;
- Embodiment 2 is a diagrammatic representation of Embodiment 1
- the second embodiment is different from the first embodiment in that: two short connecting sides of the protective frame 2 and the central member 1 are connected with two connecting portions 3, two The connecting portion 3 increases the mechanical strength between the center member 1 and the frame 2 .
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167032164A KR101892651B1 (en) | 2015-07-22 | 2016-02-29 | One type of quartz crystal blank with single convex structure |
JP2016570244A JP2017528012A (en) | 2015-07-22 | 2016-02-29 | Piezoelectric quartz chip with single-sided convex structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510433091.2A CN105007056A (en) | 2015-07-22 | 2015-07-22 | Piezoelectric quartz crystal wafer with single convex structure |
CN201510433091.2 | 2015-07-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017012347A1 true WO2017012347A1 (en) | 2017-01-26 |
Family
ID=54379600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2016/074953 WO2017012347A1 (en) | 2015-07-22 | 2016-02-29 | Piezoelectric quartz wafer with single convex structure |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2017528012A (en) |
KR (1) | KR101892651B1 (en) |
CN (1) | CN105007056A (en) |
TW (1) | TWI652839B (en) |
WO (1) | WO2017012347A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021003755A1 (en) * | 2019-07-09 | 2021-01-14 | 成都泰美克晶体技术有限公司 | Polished quartz crystal frequency wafer with boss structure on edge |
CN113364424A (en) * | 2021-06-22 | 2021-09-07 | 泰晶科技股份有限公司 | Piezoelectric quartz wafer with multi-electrode structure and manufacturing process thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040095044A1 (en) * | 2002-11-15 | 2004-05-20 | Hiroaki Yagishita | Crystal unit |
CN101478298A (en) * | 2007-10-18 | 2009-07-08 | 日本电波工业株式会社 | Quartz crystal element made of double-rotation y-cut quartz crystal plate |
JP2013066061A (en) * | 2011-09-16 | 2013-04-11 | Daishinku Corp | Crystal oscillator and manufacturing method therefor |
CN103227617A (en) * | 2012-01-31 | 2013-07-31 | 日本电波工业株式会社 | Quartz crystal vibrating piece and quartz crystal device |
US20150015119A1 (en) * | 2013-07-11 | 2015-01-15 | Nihon Dempa Kogyo Co., Ltd. | Piezoelectric vibrating piece, method for fabricating piezoelectric vibrating piece, piezoelectric device, and method for fabricating piezoelectric device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009071640A (en) * | 2007-09-14 | 2009-04-02 | Epson Toyocom Corp | Method for beveling piezoelectric vibrating raw substrate, piezoelectric vibrating reed, and piezoelectric vibrator |
JP5625432B2 (en) * | 2010-03-26 | 2014-11-19 | セイコーエプソン株式会社 | Piezoelectric vibration element and piezoelectric vibrator |
JP5708079B2 (en) * | 2011-03-16 | 2015-04-30 | 株式会社大真空 | Crystal oscillator |
JP5797961B2 (en) * | 2011-07-21 | 2015-10-21 | 日本電波工業株式会社 | Piezoelectric vibrating piece and piezoelectric device |
JP5756712B2 (en) * | 2011-08-17 | 2015-07-29 | 日本電波工業株式会社 | Crystal device |
JP2013062579A (en) * | 2011-09-12 | 2013-04-04 | Nippon Dempa Kogyo Co Ltd | Piezoelectric device and method for manufacturing piezoelectric device |
JP5293852B2 (en) * | 2012-02-27 | 2013-09-18 | セイコーエプソン株式会社 | Mesa-type piezoelectric vibrating piece, mesa-type piezoelectric vibrating device, oscillator, and electronic device |
JP5957997B2 (en) * | 2012-03-21 | 2016-07-27 | セイコーエプソン株式会社 | Vibration element, vibrator, electronic device, oscillator, and electronic device |
JP6017189B2 (en) * | 2012-06-12 | 2016-10-26 | 日本電波工業株式会社 | Piezoelectric vibrating piece and piezoelectric device |
JP5495080B2 (en) * | 2012-09-14 | 2014-05-21 | セイコーエプソン株式会社 | Frequency adjusting method for vibration device, vibration device, and electronic device |
JP2014090290A (en) * | 2012-10-30 | 2014-05-15 | Seiko Epson Corp | Vibration piece, vibration device, electronic apparatus and mobile |
JP5573991B2 (en) * | 2013-02-20 | 2014-08-20 | セイコーエプソン株式会社 | Bonding wafer |
CN204859129U (en) * | 2015-07-22 | 2015-12-09 | 成都泰美克晶体技术有限公司 | Piezoelectric quartz wafer with single umbo constructs |
-
2015
- 2015-07-22 CN CN201510433091.2A patent/CN105007056A/en active Pending
-
2016
- 2016-02-29 WO PCT/CN2016/074953 patent/WO2017012347A1/en active Application Filing
- 2016-02-29 KR KR1020167032164A patent/KR101892651B1/en active IP Right Grant
- 2016-02-29 JP JP2016570244A patent/JP2017528012A/en active Pending
- 2016-07-22 TW TW105123167A patent/TWI652839B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040095044A1 (en) * | 2002-11-15 | 2004-05-20 | Hiroaki Yagishita | Crystal unit |
CN101478298A (en) * | 2007-10-18 | 2009-07-08 | 日本电波工业株式会社 | Quartz crystal element made of double-rotation y-cut quartz crystal plate |
JP2013066061A (en) * | 2011-09-16 | 2013-04-11 | Daishinku Corp | Crystal oscillator and manufacturing method therefor |
CN103227617A (en) * | 2012-01-31 | 2013-07-31 | 日本电波工业株式会社 | Quartz crystal vibrating piece and quartz crystal device |
US20150015119A1 (en) * | 2013-07-11 | 2015-01-15 | Nihon Dempa Kogyo Co., Ltd. | Piezoelectric vibrating piece, method for fabricating piezoelectric vibrating piece, piezoelectric device, and method for fabricating piezoelectric device |
Also Published As
Publication number | Publication date |
---|---|
CN105007056A (en) | 2015-10-28 |
KR101892651B1 (en) | 2018-08-28 |
TWI652839B (en) | 2019-03-01 |
TW201709572A (en) | 2017-03-01 |
JP2017528012A (en) | 2017-09-21 |
KR20170035833A (en) | 2017-03-31 |
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