WO2017012347A1 - Piezoelectric quartz wafer with single convex structure - Google Patents

Piezoelectric quartz wafer with single convex structure Download PDF

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Publication number
WO2017012347A1
WO2017012347A1 PCT/CN2016/074953 CN2016074953W WO2017012347A1 WO 2017012347 A1 WO2017012347 A1 WO 2017012347A1 CN 2016074953 W CN2016074953 W CN 2016074953W WO 2017012347 A1 WO2017012347 A1 WO 2017012347A1
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WO
WIPO (PCT)
Prior art keywords
quartz wafer
piezoelectric quartz
central component
convex structure
wafer
Prior art date
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PCT/CN2016/074953
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French (fr)
Chinese (zh)
Inventor
叶竹之
陆旺
雷晗
Original Assignee
成都泰美克晶体技术有限公司
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Application filed by 成都泰美克晶体技术有限公司 filed Critical 成都泰美克晶体技术有限公司
Priority to KR1020167032164A priority Critical patent/KR101892651B1/en
Priority to JP2016570244A priority patent/JP2017528012A/en
Publication of WO2017012347A1 publication Critical patent/WO2017012347A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02023Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/21Crystal tuning forks
    • H03H9/215Crystal tuning forks consisting of quartz

Definitions

  • the present invention relates to the technical field of piezoelectric quartz wafer construction, and more particularly to a piezoelectric quartz wafer having a single convex structure.
  • a quartz crystal resonator is generally composed of a piezoelectric quartz wafer and a package outer casing, wherein the piezoelectric quartz crystal wafer is rectangular or circular, and the outer casing material is ceramic, glass or the like.
  • the electrodes on the upper and lower sides of the piezoelectric quartz wafer are vapor-deposited, and the electrodes are connected to the pedestal pins in the package casing through the leads of the sealed package.
  • the AC voltage can be connected to the upper and lower electrodes of the quartz wafer through the pins, causing the quartz wafer to have an inverse piezoelectric effect, which causes oscillation.
  • Quartz crystal resonators are widely used in the electronics industry such as mobile electronic devices, mobile phones, and mobile communication devices due to their frequency accuracy and stability.
  • Quartz crystal resonators have a lower resonance frequency.
  • the edge effect of the quartz wafer is weakened, and the shape of the quartz wafer needs to be changed.
  • the barrel grinding method is used to change the shape of the quartz wafer, that is, the biconvex surface structure.
  • the cost has always been high. Therefore, the technology of quartz wafers needs to be improved.
  • the object of the present invention is to overcome the shortcomings of the prior art, to provide a low cost, can be used for miniaturizing the mass production of quartz wafers, reducing the parasitic vibration generated by the edges, and enhancing the trapping effect of the center of the quartz wafer, Piezoelectric quartz wafer with a single convex structure for increasing the uniformity of the product.
  • a piezoelectric quartz having a single convex structure a wafer comprising a central member, a protective frame and a connecting portion, wherein the central member and the protective frame are both rectangular, the cavity is provided in the protective frame, and the central member is disposed in the cavity, and the central member is disposed in the cavity
  • the top surface is provided with a boss which can reduce the parasitic vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer.
  • the two long sides of the protective frame form a through groove A between the two long sides of the central member, and the protection is provided.
  • a through groove B is formed between the two short sides of the frame and the two short sides of the central member, and the through groove A communicates with the through groove B, and any short side of the protective frame and the central member pass through the connecting portion Connected, the connecting portion is disposed in any one of the through slots B.
  • the boss is a circular boss, a rectangular boss or a trapezoidal boss.
  • the connecting portion has a shape of a rectangle or a trapezoid.
  • the piezoelectric quartz wafer has a length of 0.8 to 3.2 mm.
  • the piezoelectric quartz wafer has a width of 0.6 to 2.5 mm.
  • the material of the central member, the protective frame and the connecting portion are all quartz.
  • the present invention has the following advantages: (1) The top surface of the center member of the present invention is provided with a boss which can attenuate the spurious vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer. (2) The present invention can be used for mass production of miniaturized quartz wafers, greatly improving the manufacturing efficiency of wafers and crystals, and improving the consistency. (3) When the protective frame is subjected to external forces, the force is not transmitted to the central member, thus protecting the central member well.
  • Embodiment 1 is a schematic structural view of Embodiment 1 of the present invention.
  • Figure 2 is a plan view of Figure 1;
  • Figure 3 is a cross-sectional view taken along line A-A of Figure 2;
  • Figure 4 is a bottom view of Figure 1;
  • FIG. 5 is a top view of a product based on a quartz substrate processed by a manufacturing process according to an embodiment of the present invention
  • Figure 6 is a bottom view of Figure 5;
  • Figure 7 is a schematic structural view of a second embodiment of the present invention
  • Figure 8 is a plan view of Figure 7;
  • Figure 9 is a bottom view of Figure 7;
  • FIG. 10 is a top view of a product based on a quartz substrate processed by a manufacturing process according to Embodiment 2 of the present invention.
  • Figure 11 is a bottom view of Figure 10
  • a piezoelectric quartz wafer having a single convex structure the quartz wafer adopting an AT cut type, which is generally applied to a quartz crystal resonator, wherein a long side of the wafer is parallel to The X axis, the X axis is the electric axis of the quartz crystal, the short side is parallel to the Z' axis, and the thickness direction is parallel to the Y' axis. It is not excluded that the long side of the quartz wafer is parallel to the Z' axis, the width is parallel to the X axis, and the thickness direction is parallel to the Y' axis.
  • the piezoelectric quartz wafer includes a central member 1, a protective frame 2 and a connecting portion 3.
  • the central member 1, the protective frame 2 and the connecting portion 3 are made of quartz, and the central member 1 and the protective frame 2 are both rectangular.
  • the protective frame 2 functions as a support and a package.
  • the protective frame 2 is provided with a cavity.
  • the central component 1 is disposed in the cavity, and the top surface of the central component 1 is provided with a weakened edge. a parasitic vibration, and a boss 4 capable of enhancing the trapping effect at the center of the quartz wafer.
  • the two long sides of the protective frame 2 and the two long sides of the central member 1 are formed with a through groove A5, and the two short sides of the protective frame 2 A through groove B6 is formed between the edge and the two short sides of the central member 1, and the through groove A5 communicates with the through groove B6, and the through groove A5 and the through groove B6 are formed by chemically etching or physically dividing the quartz crystal material.
  • any one of the short sides of the protective frame 2 is connected to the central member 1 via a connecting portion 3, and the connecting portion 3 is disposed in any one of the through grooves B6.
  • the boss 4 is a circular boss, a rectangular boss or a trapezoidal boss.
  • the boss in this embodiment is a rectangular boss.
  • the shape of the connecting portion 3 is rectangular or trapezoidal, and the connecting portion 3 in the present embodiment has a rectangular shape.
  • the piezoelectric quartz wafer has a length of 0.8 to 3.2 mm, and the length in the embodiment is 1.6 mm, and the piezoelectric quartz wafer has a width of 0.6 to 2.5 mm, and the width in the present example is 1.2. Mm, the quartz wafer
  • the resonant frequency of the quartz wafer in this example is between 8 MHz and 70 MHz.
  • a piezoelectric quartz wafer having a single convex structure is processed as follows:
  • a lithographic anti-etching protective layer ER having a uniform thickness is formed on the surface of the quartz substrate 7 by spin coating or spraying, and then lithographically exposed on the lithographic anti-etching protective layer ER. Forming a surface to be etched;
  • Embodiment 2 is a diagrammatic representation of Embodiment 1
  • the second embodiment is different from the first embodiment in that: two short connecting sides of the protective frame 2 and the central member 1 are connected with two connecting portions 3, two The connecting portion 3 increases the mechanical strength between the center member 1 and the frame 2 .

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A piezoelectric quartz wafer with a single convex structure comprises a central component (1), a protection frame (2), and a connection portion (3). A cavity is provided in the protecting frame (2), the central component (1) is disposed in the cavity, and a boss (4) is provided on the top surface of the central component (1). Through grooves A (5) are formed between the two long sides of the protecting frame (2) and the two long sides of the central component (1), and through grooves B (6) are formed between the two short sides of the protecting frame (2) and the two short sides of the central component (1). The through grooves A (5) are communicated with the through grooves B (6). The connection portion (3) is provided in any one of the through grooves B (6). The piezoelectric quartz wafer has the following beneficial effects: the piezoelectric quartz wafer can be used for batch production of small-sized quartz wafers and weaken parasitic vibration generated by the edge; meanwhile, the piezoelectric quartz wafer can strengthen the energy trapping effect of the centre of the quartz crystal wafer, improve working accuracy , and greatly improve product consistency.

Description

说明书 发明名称:一种具有单凸结构的压电石英晶片 技术领域  Description: A piezoelectric quartz wafer with a single convex structure
[0001] 本发明涉及压电石英晶片构造的技术领域, 特别是一种具有单凸结构的压电石 英晶片。  [0001] The present invention relates to the technical field of piezoelectric quartz wafer construction, and more particularly to a piezoelectric quartz wafer having a single convex structure.
背景技术  Background technique
[0002] 目前, 石英晶体谐振器通常由压电石英晶片及封装外壳构成, 其中压电石英晶 片为长方形或圆形, 封装外壳材料为陶瓷、 玻璃等。 压电石英晶片上下两面需 蒸镀电极, 电极通过密封封装的引线, 与封装外壳中的基座引脚相连。 交流电 压可通过引脚连通石英晶片的上下电极, 使石英晶片产生逆压电效应, 从而产 生振荡。 石英晶体谐振器因其频率的准确性和稳定性等特性广泛应用在移动电 子设备、 手机、 移动通信装置等电子行业。  [0002] At present, a quartz crystal resonator is generally composed of a piezoelectric quartz wafer and a package outer casing, wherein the piezoelectric quartz crystal wafer is rectangular or circular, and the outer casing material is ceramic, glass or the like. The electrodes on the upper and lower sides of the piezoelectric quartz wafer are vapor-deposited, and the electrodes are connected to the pedestal pins in the package casing through the leads of the sealed package. The AC voltage can be connected to the upper and lower electrodes of the quartz wafer through the pins, causing the quartz wafer to have an inverse piezoelectric effect, which causes oscillation. Quartz crystal resonators are widely used in the electronics industry such as mobile electronic devices, mobile phones, and mobile communication devices due to their frequency accuracy and stability.
[0003] 随着移动通信电子的迅速发展, 器件小型化需求越来越高, 石英晶体谐振器的 小型化也势在必行。 在石英晶体谐振器小型化的进程中, 传统设计结构已很难 生产, 且成本较高。 传统的切条、 腐蚀等工艺方式难以加工超小型石英晶片, 已经不能满足小型化的要求。  [0003] With the rapid development of mobile communication electronics, the demand for miniaturization of devices is increasing, and the miniaturization of quartz crystal resonators is also imperative. In the process of miniaturization of quartz crystal resonators, the conventional design structure has been difficult to produce and the cost is high. Conventional cutting, etching and other processes are difficult to process ultra-small quartz wafers, which cannot meet the requirements of miniaturization.
[0004] 石英晶体谐振器的谐振频率较低吋, 为了提高能陷效应, 削弱石英晶片边缘效 应, 需改变石英晶片的外形。 通常情况下, 采用的是滚磨磨削方式, 改变石英 晶片外形, 即双凸曲面结构。 但因滚磨工艺的稳定性差、 重复性低, 所以成本 一直居高不下, 因此, 石英晶片技术亟待提升。  [0004] Quartz crystal resonators have a lower resonance frequency. In order to improve the trapping effect, the edge effect of the quartz wafer is weakened, and the shape of the quartz wafer needs to be changed. Normally, the barrel grinding method is used to change the shape of the quartz wafer, that is, the biconvex surface structure. However, due to the poor stability and low repeatability of the barreling process, the cost has always been high. Therefore, the technology of quartz wafers needs to be improved.
技术问题  technical problem
[0005] 本发明的目的在于克服现有技术的缺点, 提供一种成本低、 可用于小型化石英 晶片批量型生产、 减弱边缘产生的寄生振动, 并能够增强石英晶片中心的能陷 效应、 大幅度提升产品的一致性的具有单凸结构的压电石英晶片。  [0005] The object of the present invention is to overcome the shortcomings of the prior art, to provide a low cost, can be used for miniaturizing the mass production of quartz wafers, reducing the parasitic vibration generated by the edges, and enhancing the trapping effect of the center of the quartz wafer, Piezoelectric quartz wafer with a single convex structure for increasing the uniformity of the product.
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0006] [0006]本发明的目的通过以下技术方案来实现: 一种具有单凸结构的压电石英 晶片, 它包括中央构件、 保护框和连接部, 所述的中央构件和保护框均呈矩形 状, 保护框内设置有型腔, 型腔内设置有中央构件设置在型腔内, 中央构件的 顶表面设置有能够减弱边缘产生的寄生振动, 并能够增强石英晶片中心的能陷 效应的凸台, 保护框的两条长边与中央构件的两条长边之间形成有通槽 A, 保护 框的两条短边与中央构件的两条短边之间形成有通槽 B, 通槽 A与通槽 B连通, 所述的保护框的任意一条短边与中央构件之间通过连接部相连接, 连接部设置 在任意一个通槽 B内。 [0006] The object of the present invention is achieved by the following technical solutions: A piezoelectric quartz having a single convex structure a wafer comprising a central member, a protective frame and a connecting portion, wherein the central member and the protective frame are both rectangular, the cavity is provided in the protective frame, and the central member is disposed in the cavity, and the central member is disposed in the cavity The top surface is provided with a boss which can reduce the parasitic vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer. The two long sides of the protective frame form a through groove A between the two long sides of the central member, and the protection is provided. A through groove B is formed between the two short sides of the frame and the two short sides of the central member, and the through groove A communicates with the through groove B, and any short side of the protective frame and the central member pass through the connecting portion Connected, the connecting portion is disposed in any one of the through slots B.
[0007] 所述的凸台为圆形凸台、 矩形凸台或梯形凸台。  [0007] The boss is a circular boss, a rectangular boss or a trapezoidal boss.
[0008] 所述的连接部的形状为矩形或梯形。  [0008] The connecting portion has a shape of a rectangle or a trapezoid.
[0009] 所述的压电石英晶片的长度为 0.8~3.2mm。  [0009] The piezoelectric quartz wafer has a length of 0.8 to 3.2 mm.
[0010] 所述的压电石英晶片的宽度为 0.6~2.5mm。  [0010] The piezoelectric quartz wafer has a width of 0.6 to 2.5 mm.
[0011] 所述的中央构件、 保护框和连接部的材质均为石英。  [0011] The material of the central member, the protective frame and the connecting portion are all quartz.
发明的有益效果  Advantageous effects of the invention
有益效果  Beneficial effect
[0012] 本发明具有以下优点: (1) 本发明的中央构件的顶表面设置有凸台, 凸台能 够减弱边缘产生的寄生振动, 并能够增强石英晶片中心的能陷效应。 (2) 本发 明可用于小型化石英晶片批量型生产、 大幅度提升了晶片和晶体的制造效率, 同吋一致性也得到提升。 (3) 当保护框受到外界力的作用吋, 力不会传递到中 央构件上, 从而很好地保护了中央构件。  The present invention has the following advantages: (1) The top surface of the center member of the present invention is provided with a boss which can attenuate the spurious vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer. (2) The present invention can be used for mass production of miniaturized quartz wafers, greatly improving the manufacturing efficiency of wafers and crystals, and improving the consistency. (3) When the protective frame is subjected to external forces, the force is not transmitted to the central member, thus protecting the central member well.
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0013] 图 1为本发明实施例一的结构示意图;  1 is a schematic structural view of Embodiment 1 of the present invention;
[0014] 图 2为图 1的俯视图; Figure 2 is a plan view of Figure 1;
[0015] 图 3为图 2的 A-A剖视图; Figure 3 is a cross-sectional view taken along line A-A of Figure 2;
[0016] 图 4为图 1的仰视图; Figure 4 is a bottom view of Figure 1;
[0017] 图 5为本发明实施例一基于石英基板经制造工艺加工后产品俯视图;  5 is a top view of a product based on a quartz substrate processed by a manufacturing process according to an embodiment of the present invention;
[0018] 图 6为图 5的仰视图;  Figure 6 is a bottom view of Figure 5;
[0019] 图 7为本发明实施例二的结构示意图; [0020] 图 8为图 7的俯视图; 7 is a schematic structural view of a second embodiment of the present invention; Figure 8 is a plan view of Figure 7;
[0021] 图 9为图 7的仰视图; Figure 9 is a bottom view of Figure 7;
[0022] 图 10为本发明实施例二基于石英基板经制造工艺加工后产品俯视图;  10 is a top view of a product based on a quartz substrate processed by a manufacturing process according to Embodiment 2 of the present invention;
[0023] 图 11为图 10仰视图; Figure 11 is a bottom view of Figure 10;
[0024] 图中, 1-中央构件, 2-保护框, 3-连接部, 4-凸台, 5-通槽 A, 6-通槽 B, 7-石英 基板, 8-切割定位孔。  [0024] In the drawings, 1-center member, 2-protective frame, 3-connecting portion, 4-bump, 5-way groove A, 6-through groove B, 7-quartz substrate, 8-cut positioning hole.
本发明的实施方式 Embodiments of the invention
[0025] 下面结合附图对本发明做进一步的描述, 本发明的保护范围不局限于以下所述 [0026] 实施例一:  [0025] The present invention will be further described below in conjunction with the accompanying drawings, and the scope of protection of the present invention is not limited to the following: [0026] Embodiment 1
[0027] 如图 1~4所示, 一种具有单凸结构的压电石英晶片, 该石英晶片采用 AT切型, 此切型普遍应用于石英晶体谐振器中, 其中晶片的长边平行于 X轴, X轴是石英 晶体的电轴, 短边平行于 Z'轴, 厚度方向平行于 Y'轴。 不排除, 石英晶片的长边 平行于 Z'轴, 宽度平行于 X轴, 厚度方向平行于 Y'轴。 该压电石英晶片包括中央 构件 1、 保护框 2和连接部 3, 中央构件 1、 保护框 2和连接部 3的材质均为石英, 所述的中央构件 1和保护框 2均呈矩形状, 所述的保护框 2起到支撑和封装连接作 用, 保护框 2内设置有型腔, 型腔内设置有中央构件 1设置在型腔内, 中央构件 1 的顶表面设置有能够减弱边缘产生的寄生振动, 并能够增强石英晶片中心的能 陷效应的凸台 4, 保护框 2的两条长边与中央构件 1的两条长边之间形成有通槽 A5 , 保护框 2的两条短边与中央构件 1的两条短边之间形成有通槽 B6, 通槽 A5与通 槽 B6连通, 通槽 A5和通槽 B6通过化学腐蚀或物理分割石英晶体材料而成。 如图 1~4所示, 所述的保护框 2的任意一条短边与中央构件 1之间通过连接部 3相连接 , 连接部 3设置在任意一个通槽 B6内。  [0027] As shown in FIGS. 1 to 4, a piezoelectric quartz wafer having a single convex structure, the quartz wafer adopting an AT cut type, which is generally applied to a quartz crystal resonator, wherein a long side of the wafer is parallel to The X axis, the X axis is the electric axis of the quartz crystal, the short side is parallel to the Z' axis, and the thickness direction is parallel to the Y' axis. It is not excluded that the long side of the quartz wafer is parallel to the Z' axis, the width is parallel to the X axis, and the thickness direction is parallel to the Y' axis. The piezoelectric quartz wafer includes a central member 1, a protective frame 2 and a connecting portion 3. The central member 1, the protective frame 2 and the connecting portion 3 are made of quartz, and the central member 1 and the protective frame 2 are both rectangular. The protective frame 2 functions as a support and a package. The protective frame 2 is provided with a cavity. The central component 1 is disposed in the cavity, and the top surface of the central component 1 is provided with a weakened edge. a parasitic vibration, and a boss 4 capable of enhancing the trapping effect at the center of the quartz wafer. The two long sides of the protective frame 2 and the two long sides of the central member 1 are formed with a through groove A5, and the two short sides of the protective frame 2 A through groove B6 is formed between the edge and the two short sides of the central member 1, and the through groove A5 communicates with the through groove B6, and the through groove A5 and the through groove B6 are formed by chemically etching or physically dividing the quartz crystal material. As shown in Figs. 1 to 4, any one of the short sides of the protective frame 2 is connected to the central member 1 via a connecting portion 3, and the connecting portion 3 is disposed in any one of the through grooves B6.
[0028] 所述的凸台 4为圆形凸台、 矩形凸台或梯形凸台, 本实施例中的凸台为矩形凸 台。 所述的连接部 3的形状为矩形或梯形, 本实施例中的连接部 3为矩形状。  [0028] The boss 4 is a circular boss, a rectangular boss or a trapezoidal boss. The boss in this embodiment is a rectangular boss. The shape of the connecting portion 3 is rectangular or trapezoidal, and the connecting portion 3 in the present embodiment has a rectangular shape.
[0029] 所述的压电石英晶片的长度为 0.8~3.2mm, 本实施例中的长度为 1.6mm, 所述 的压电石英晶片的宽度为 0.6~2.5mm, 本实例中的宽度为 1.2mm, 该石英晶片的 谐振频率为 t=1664/F, t表示石英晶片的厚度, 单位为 μηι; F表示谐振频率, 单位 为 ΜΗζ, 本实例中的石英晶片的谐振频率在 8MHz ~70MHz之间。 [0029] The piezoelectric quartz wafer has a length of 0.8 to 3.2 mm, and the length in the embodiment is 1.6 mm, and the piezoelectric quartz wafer has a width of 0.6 to 2.5 mm, and the width in the present example is 1.2. Mm, the quartz wafer The resonant frequency is t = 1664/F, t represents the thickness of the quartz wafer, and the unit is μηι; F represents the resonant frequency, and the unit is ΜΗζ. The resonant frequency of the quartz wafer in this example is between 8 MHz and 70 MHz.
[0030] 如图 5和图 6所示, 一种具有单凸结构的压电石英晶片, 其加工步骤如下: [0030] As shown in FIG. 5 and FIG. 6, a piezoelectric quartz wafer having a single convex structure is processed as follows:
[0031] Sl、 取出一定规格的石英基板 7, 并对石英基板 7的上、 下表面进行研磨、 抛光 处理; [0031] Sl, taking out a quartz substrate 7 of a certain specification, and grinding and polishing the upper and lower surfaces of the quartz substrate 7;
[0032] S2、 通过旋涂或喷淋方式在石英基板 7表面形成厚度均匀的光刻抗刻蚀保护层 E R, 然后使用光刻曝光在光刻抗刻蚀保护层 ER上, 在表面形成待刻蚀图形; [0032] S2, forming a uniform thickness lithographic anti-etching protective layer ER on the surface of the quartz substrate 7 by spin coating or spraying, and then using lithographic exposure on the lithographic anti-etching protective layer ER, forming on the surface Etching the pattern;
[0033] S3、 通过湿法刻蚀或干法刻蚀方式在石英基板 7上表面刻蚀, 从而在石英基板 7 表面形成凸台 4, 凸台 4的刻蚀深度通过控制湿法刻蚀或干法刻蚀反应吋间决定 [0033] S3, etching the surface of the quartz substrate 7 by wet etching or dry etching, thereby forming a bump 4 on the surface of the quartz substrate 7, and the etching depth of the bump 4 is controlled by wet etching or Dry etching reaction
[0034] S4、 去除步骤 S3中的光刻抗刻蚀保护层 ER并将石英基板 7表面清洗干净; [0034] S4, removing the lithographic anti-etching protective layer ER in step S3 and cleaning the surface of the quartz substrate 7;
[0035] S5、 清洗结束后, 先通过旋涂或喷淋方式在石英基板 7表面形成厚度均匀的光 刻抗刻蚀保护层 ER, 再使用光刻曝光在光刻抗刻蚀保护层 ER上表面形成待刻蚀 图形; [0035] S5. After the cleaning is completed, a lithographic anti-etching protective layer ER having a uniform thickness is formed on the surface of the quartz substrate 7 by spin coating or spraying, and then lithographically exposed on the lithographic anti-etching protective layer ER. Forming a surface to be etched;
[0036] S6、 通过湿法刻蚀、 干法刻蚀、 激光刻蚀、 物理喷砂等方式在石英基板 7上表 面刻蚀, 从而形成通槽 A5和通槽 B6;  [0036] S6, surface etching on the quartz substrate 7 by wet etching, dry etching, laser etching, physical blasting, etc., thereby forming a through groove A5 and a through groove B6;
[0037] S7、 去除光刻抗刻蚀保护层 ER并将石英基板 7表面清洗干净, 从而制得具有单 凸结构的压电石英晶片。 [0037] S7. The lithographic anti-etching protective layer ER is removed and the surface of the quartz substrate 7 is cleaned to obtain a piezoelectric quartz wafer having a single convex structure.
[0038] S8、 在石英基板 7上加工出切割定位孔 8; [0038] S8, processing a cutting positioning hole 8 on the quartz substrate 7;
[0039] S9、 使用激光切割或刀片切割沿着切割定位孔 8对石英基板 7进行切割分离, 从 而实现了石英晶片的加工。  [0039] S9, cutting and separating the quartz substrate 7 along the cutting positioning hole 8 by using laser cutting or blade cutting, thereby realizing processing of the quartz wafer.
[0040] 实施例二: [0040] Embodiment 2:
[0041] 如图 7~9所示, 本实施二与实施例一的不同点在于: 所述的保护框 2的任意一条 短边与中央构件 1之间连接有两个连接部 3, 两个连接部 3增加了中央构件 1和与 护框 2之间的机械强度。  [0041] As shown in FIG. 7 to FIG. 9 , the second embodiment is different from the first embodiment in that: two short connecting sides of the protective frame 2 and the central member 1 are connected with two connecting portions 3, two The connecting portion 3 increases the mechanical strength between the center member 1 and the frame 2 .
[0042] 以上所述仅是本发明的优选实施方式, 应当理解本发明并非局限于本文所披露 的形式, 不应看作是对其他实施例的排除, 而可用于各种其他组合、 修改和环 境, 并能够在本文所述构想范围内, 通过上述教导或相关领域的技术或知识进 行改动。 而本领域人员所进行的改动和变化不脱离本发明的精神和范围, 则都 应在本发明所附权利要求的保护范围内。 The above is only a preferred embodiment of the present invention, and it should be understood that the present invention is not limited to the forms disclosed herein, and should not be construed as being excluded from the other embodiments, but may be used in various other combinations, modifications, and Environment, and within the scope of the concepts described herein, through the above teachings or related fields of technology or knowledge Make changes. All changes and modifications made by those skilled in the art are intended to be within the scope of the appended claims.

Claims

权利要求书 一种具有单凸结构的压电石英晶片, 其特征在于: 它包括中央构件 ( 1) 、 保护框 (2) 和连接部 (3) , 所述的中央构件 (1) 和保护框 ( 2) 均呈矩形状, 保护框 (2) 内设置有型腔, 型腔内设置有中央构件 Claims a piezoelectric quartz wafer with a single convex structure, characterized in that: it includes a central component (1), a protective frame (2) and a connecting part (3), the central component (1) and the protective frame (2) are all rectangular in shape, the protective frame (2) is provided with a cavity, and the cavity is provided with a central component
(1) 设置在型腔内, 中央构件 (1) 的顶表面设置有能够减弱边缘产 生的寄生振动, 并能够增强石英晶片中心的能陷效应的凸台 (4) , 保护框 (2) 的两条长边与中央构件 (1) 的两条长边之间形成有通槽 A (5) , 保护框 (2) 的两条短边与中央构件 (1) 的两条短边之间 形成有通槽 B (6) , 通槽 A (5) 与通槽 B (6) 连通, 所述的保护框(1) Set in the cavity, the top surface of the central component (1) is provided with a boss (4) that can weaken the parasitic vibration generated at the edge and enhance the energy sinking effect in the center of the quartz wafer, and the protective frame (2) A slot A (5) is formed between the two long sides and the two long sides of the central member (1), and a slot A (5) is formed between the two short sides of the protective frame (2) and the two short sides of the central member (1). There is a through slot B (6), the through slot A (5) is connected with the through slot B (6), and the protective frame
(2) 的任意一条短边与中央构件 (1) 之间通过连接部 (3) 相连接 , 连接部 (3) 设置在任意一个通槽 B (6) 内。 Any short side of (2) is connected to the central component (1) through a connecting part (3), and the connecting part (3) is arranged in any one of the through slots B (6).
根据权利要求 1所述的一种具有单凸结构的压电石英晶片, 其特征在 于: 所述的凸台 (4) 为圆形凸台、 矩形凸台或梯形凸台。 A piezoelectric quartz wafer with a single convex structure according to claim 1, characterized in that: the boss (4) is a circular boss, a rectangular boss or a trapezoidal boss.
根据权利要求 1所述的一种具有单凸结构的压电石英晶片, 其特征在 于: 所述的连接部 (3) 的形状为矩形或梯形。 A piezoelectric quartz wafer with a single convex structure according to claim 1, characterized in that: the shape of the connecting part (3) is rectangular or trapezoidal.
根据权利要求 1所述的一种具有单凸结构的压电石英晶片, 其特征在 于: 所述的压电石英晶片的长度为 0.8~3.2mm。 A piezoelectric quartz wafer with a single convex structure according to claim 1, characterized in that: the length of the piezoelectric quartz wafer is 0.8~3.2mm.
根据权利要求 1或 4所述的一种具有单凸结构的压电石英晶片, 其特征 在于: 所述的压电石英晶片的宽度为 0.6~2.5mm。 A piezoelectric quartz wafer with a single convex structure according to claim 1 or 4, characterized in that: the width of the piezoelectric quartz wafer is 0.6~2.5mm.
根据权利要求 1所述的一种具有单凸结构的压电石英晶片, 其特征在 于: 所述的中央构件 (1) 、 保护框 (2) 和连接部 (3) 的材质均为 石英。 A piezoelectric quartz wafer with a single convex structure according to claim 1, characterized in that: the central component (1), the protective frame (2) and the connecting portion (3) are all made of quartz.
PCT/CN2016/074953 2015-07-22 2016-02-29 Piezoelectric quartz wafer with single convex structure WO2017012347A1 (en)

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