TWI652839B - Piezoelectric quartz wafer with single convex structure - Google Patents
Piezoelectric quartz wafer with single convex structure Download PDFInfo
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- TWI652839B TWI652839B TW105123167A TW105123167A TWI652839B TW I652839 B TWI652839 B TW I652839B TW 105123167 A TW105123167 A TW 105123167A TW 105123167 A TW105123167 A TW 105123167A TW I652839 B TWI652839 B TW I652839B
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- central member
- quartz wafer
- protective frame
- convex structure
- boss
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- 239000010453 quartz Substances 0.000 title claims abstract description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 230000001681 protective effect Effects 0.000 claims abstract description 28
- 230000000694 effects Effects 0.000 claims abstract description 10
- 230000003071 parasitic effect Effects 0.000 claims abstract description 6
- 230000002708 enhancing effect Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 38
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
- H03H9/215—Crystal tuning forks consisting of quartz
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
本發明公開了一種具有單凸結構的壓電石英晶片,它包括中央構件(1)、保護框(2)和連接部(3),保護框(2)內設置有型腔,型腔內設置有中央構件(1),中央構件(1)的頂表面設置有凸台(4),保護框(2)的兩條長邊與中央構件(1)的兩條長邊之間形成有第一通槽(5),保護框(2)的兩條短邊與中央構件(1)的兩條短邊之間形成有第二通槽(6),第一通槽(5)與第二通槽(6)連通,連接部(3)設置在任意一個第二通槽(6)內。本發明的有益效果是:可用於小型化石英晶片批量型生產、減弱邊緣產生的寄生振動,並能夠增強石英晶片中心的能陷效應、提高加工精度、大幅度提升產品的一致性。The invention discloses a piezoelectric quartz wafer with a single convex structure, which comprises a central member (1), a protective frame (2) and a connecting portion (3). The protective frame (2) is provided with a cavity, and the cavity is arranged. There is a central member (1), the top surface of the central member (1) is provided with a boss (4), and the two long sides of the protective frame (2) form a first space between the two long sides of the central member (1) The through groove (5), the two short sides of the protective frame (2) and the two short sides of the central member (1) are formed with a second through groove (6), the first through groove (5) and the second pass The slot (6) is in communication, and the connecting portion (3) is disposed in any one of the second through slots (6). The invention has the beneficial effects that it can be used for miniaturizing the mass production of quartz wafers, reducing the parasitic vibration generated by the edges, and enhancing the energy trapping effect at the center of the quartz wafer, improving the processing precision, and greatly improving the consistency of the product.
Description
本發明涉及壓電石英晶片構造的技術領域,尤指一種具有單凸結構的壓電石英晶片。The present invention relates to the technical field of piezoelectric quartz wafer construction, and more particularly to a piezoelectric quartz wafer having a single convex structure.
目前,石英晶體諧振器通常由壓電石英晶片及封裝外殼構成,其中壓電石英晶片為長方形或圓形,封裝外殼材料為陶瓷、玻璃等。壓電石英晶片上下兩面需蒸鍍電極,電極通過密封封裝的引線,與封裝外殼中的基座引腳相連。交流電壓可通過引腳連通石英晶片的上下電極,使石英晶片產生逆壓電效應,從而產生振盪。石英晶體諧振器因其頻率的準確性和穩定性等特性廣泛應用在移動電子設備、手機、移動通信裝置等電子行業。At present, a quartz crystal resonator is generally composed of a piezoelectric quartz wafer and a package casing, wherein the piezoelectric quartz wafer is rectangular or circular, and the package casing material is ceramic, glass, or the like. The electrodes on the upper and lower sides of the piezoelectric quartz wafer are vapor-deposited, and the electrodes are connected to the pedestal pins in the package casing through the leads of the sealed package. The AC voltage can be connected to the upper and lower electrodes of the quartz wafer through the pins, causing the quartz wafer to have an inverse piezoelectric effect, thereby generating oscillation. Quartz crystal resonators are widely used in electronic industries such as mobile electronic devices, mobile phones, and mobile communication devices due to their frequency accuracy and stability.
隨著移動通信電子的迅速發展,器件小型化需求越來越高,石英晶體諧振器的小型化也勢在必行。在石英晶體諧振器小型化的進程中,傳統設計結構已很難生產,且成本較高。傳統的切條、腐蝕等工藝方式難以加工超小型石英晶片,已經不能滿足小型化的要求。With the rapid development of mobile communication electronics, the demand for miniaturization of devices is increasing, and the miniaturization of quartz crystal resonators is also imperative. In the process of miniaturization of quartz crystal resonators, the conventional design structure has been difficult to produce and the cost is high. Conventional cutting, etching and other processes are difficult to process ultra-small quartz wafers, which cannot meet the requirements of miniaturization.
石英晶體諧振器的諧振頻率較低時,為了提高能陷效應,削弱石英晶片邊緣效應,需改變石英晶片的外形。通常情況下,採用的是滾磨磨削方式,改變石英晶片外形,即雙凸曲面結構。但因滾磨工藝的穩定性差、重複性低,所以成本一直居高不下,因此,石英晶片技術亟待提升。When the resonant frequency of the quartz crystal resonator is low, in order to improve the trapping effect and weaken the edge effect of the quartz wafer, it is necessary to change the shape of the quartz wafer. Usually, the barrel grinding method is adopted to change the shape of the quartz wafer, that is, the biconvex surface structure. However, due to the poor stability and low repeatability of the barreling process, the cost has always been high. Therefore, the quartz wafer technology needs to be improved.
有鑑於此,吾等發明人乃潛心進一步研究,並著手進行研發及改良,期以一較佳發明以解決上述問題,且在經過不斷試驗及修改後而有本發明之問世。In view of this, our inventors have devote themselves to further research and have initiated research and development and improvement, with a preferred invention to solve the above problems, and have been continually tested and modified to have the present invention.
爰是,本發明的目的在於克服現有技術的缺點,提供一種成本低、可用於小型化石英晶片批量型生產、減弱邊緣產生的寄生振動,並能夠增強石英晶片中心的能陷效應、大幅度提升產品的一致性的具有單凸結構的壓電石英晶片。Therefore, the object of the present invention is to overcome the shortcomings of the prior art, to provide a low cost, can be used for miniaturizing the mass production of quartz wafers, reducing the parasitic vibration generated by the edges, and enhancing the trapping effect of the center of the quartz wafer, and greatly improving A consistent piezoelectric quartz wafer with a single convex structure.
本發明的目的通過以下技術方案來實現:一種具有單凸結構的壓電石英晶片,它包括中央構件、保護框和連接部,所述的中央構件和保護框均呈矩形狀,保護框內設置有型腔,型腔內設置有中央構件,中央構件的頂表面設置有能夠減弱邊緣產生的寄生振動,並能夠增強石英晶片中心的能陷效應的凸台,保護框的兩條長邊與中央構件的兩條長邊之間形成有第一通槽,保護框的兩條短邊與中央構件的兩條短邊之間形成有第二通槽,第一通槽與第二通槽連通,所述的保護框的任意一條短邊與中央構件之間通過連接部相連接,連接部設置在任意一個第二通槽內。The object of the present invention is achieved by the following technical solution: a piezoelectric quartz wafer having a single convex structure, comprising a central member, a protective frame and a connecting portion, wherein the central member and the protective frame are both rectangular, and the protective frame is arranged There is a cavity in which a central member is disposed, and the top surface of the central member is provided with a boss which can attenuate the parasitic vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer, and the two long sides and the center of the protective frame A first through slot is formed between the two long sides of the member, and a second through slot is formed between the two short sides of the protection frame and the two short sides of the central member, and the first through slot communicates with the second through slot. Any one of the short sides of the protective frame and the central member are connected by a connecting portion, and the connecting portion is disposed in any one of the second through grooves.
所述的凸台為圓形凸台、矩形凸台或梯形凸台。The boss is a circular boss, a rectangular boss or a trapezoidal boss.
所述的連接部的形狀為矩形或梯形。The connecting portion has a rectangular or trapezoidal shape.
所述的壓電石英晶片的長度為0.8~3.2mm。The piezoelectric quartz wafer has a length of 0.8 to 3.2 mm.
所述的壓電石英晶片的寬度為0.6~2.5mm。The piezoelectric quartz wafer has a width of 0.6 to 2.5 mm.
所述的中央構件、保護框和連接部的材質均為石英。The material of the central member, the protective frame and the connecting portion is quartz.
是由上述說明及設置,顯見本發明主要具有下列數項優點及功效,茲逐一詳述如下:It is obvious from the above description and setting that the present invention has the following several advantages and effects, which are detailed as follows:
1. 本發明的中央構件的頂表面設置有凸台,凸台能夠減弱邊緣產生的寄生振動,並能夠增強石英晶片中心的能陷效應。(2)本發明可用於小型化石英晶片批量型生產、大幅度提升了晶片和晶體的製造效率,同時一致性也得到提升。(3)當保護框受到外界力的作用時,力不會傳遞到中央構件上,從而很好地保護了中央構件。1. The top surface of the central member of the present invention is provided with a boss which can attenuate the parasitic vibration generated by the edge and can enhance the trapping effect at the center of the quartz wafer. (2) The present invention can be used for mass production of miniaturized quartz wafers, greatly improving the manufacturing efficiency of wafers and crystals, and at the same time improving consistency. (3) When the protective frame is subjected to external force, the force is not transmitted to the central member, thereby protecting the central member well.
關於吾等發明人之技術手段,茲舉數種較佳實施例配合圖式於下文進行詳細說明,俾供 鈞上深入瞭解並認同本發明。The invention will be described in detail below with reference to the drawings.
下面結合附圖對本發明做進一步的描述,本發明的保護範圍不局限於以下所述:The present invention will be further described below in conjunction with the accompanying drawings, and the scope of protection of the present invention is not limited to the following:
實施例一:Embodiment 1:
如圖1~4所示,一種具有單凸結構的壓電石英晶片,該石英晶片採用AT切型,此切型普遍應用於石英晶體諧振器中,其中晶片的長邊平行於X軸,X軸是石英晶體的電軸,短邊平行於Z'軸,厚度方向平行於Y'軸。不排除,石英晶片的長邊平行於Z'軸,寬度平行於X軸,厚度方向平行於Y'軸。該壓電石英晶片包括中央構件1、保護框2和連接部3,中央構件1、保護框2和連接部3的材質均為石英,所述的中央構件1和保護框2均呈矩形狀,所述的保護框2起到支撐和封裝連接作用,保護框2內設置有型腔,型腔內設置有中央構件1,中央構件1的頂表面設置有能夠減弱邊緣產生的寄生振動,並能夠增強石英晶片中心的能陷效應的凸台4,保護框2的兩條長邊與中央構件1的兩條長邊之間形成有第一通槽5,保護框2的兩條短邊與中央構件1的兩條短邊之間形成有第二通槽6,第一通槽5與第二通槽6連通,第一通槽5和第二通槽6通過化學腐蝕或物理分割石英晶體材料而成。如圖1~4所示,所述的保護框2的任意一條短邊與中央構件1之間通過連接部3相連接,連接部3設置在任意一個第二通槽6內。As shown in FIGS. 1 to 4, a piezoelectric quartz wafer having a single convex structure using an AT cut type is generally applied to a quartz crystal resonator in which a long side of the wafer is parallel to the X axis, X. The axis is the electrical axis of the quartz crystal, the short side is parallel to the Z' axis, and the thickness direction is parallel to the Y' axis. It is not excluded that the long side of the quartz wafer is parallel to the Z' axis, the width is parallel to the X axis, and the thickness direction is parallel to the Y' axis. The piezoelectric quartz wafer includes a central member 1, a protective frame 2 and a connecting portion 3. The central member 1, the protective frame 2 and the connecting portion 3 are made of quartz, and the central member 1 and the protective frame 2 are both rectangular. The protective frame 2 functions as a support and a package. The protective frame 2 is provided with a cavity, and the central member 1 is disposed in the cavity. The top surface of the central member 1 is provided with a parasitic vibration capable of weakening the edge and capable of A boss 4 for enhancing the trapping effect of the center of the quartz wafer, a first through groove 5 is formed between the two long sides of the protective frame 2 and the two long sides of the central member 1, and the two short sides and the center of the protective frame 2 A second through groove 6 is formed between the two short sides of the member 1. The first through groove 5 communicates with the second through groove 6. The first through groove 5 and the second through groove 6 chemically etch or physically divide the quartz crystal material. Made. As shown in FIGS. 1 to 4, any one of the short sides of the protective frame 2 and the central member 1 are connected by a connecting portion 3, and the connecting portion 3 is disposed in any one of the second through grooves 6.
所述的凸台4為圓形凸台、矩形凸台或梯形凸台,本實施例中的凸台為矩形凸台。所述的連接部3的形狀為矩形或梯形,本實施例中的連接部3為矩形狀。The boss 4 is a circular boss, a rectangular boss or a trapezoidal boss. The boss in this embodiment is a rectangular boss. The shape of the connecting portion 3 is rectangular or trapezoidal, and the connecting portion 3 in the present embodiment has a rectangular shape.
所述的壓電石英晶片的長度為0.8~3.2mm,本實施例中的長度為1.6mm,所述的壓電石英晶片的寬度為0.6~2.5mm,本實例中的寬度為1.2mm,該石英晶片的諧振頻率為t=1664/F,t表示石英晶片的厚度,單位為μm;F表示諧振頻率,單位為MHz,本實例中的石英晶片的諧振頻率在8MHz ~70MHz之間。The piezoelectric quartz wafer has a length of 0.8 to 3.2 mm, a length of 1.6 mm in the embodiment, a width of the piezoelectric quartz wafer of 0.6 to 2.5 mm, and a width of 1.2 mm in the present example. The resonant frequency of the quartz wafer is t=1664/F, t represents the thickness of the quartz wafer in μm; F represents the resonant frequency in MHz, and the resonant frequency of the quartz wafer in this example is between 8 MHz and 70 MHz.
如圖5和圖6所示,一種具有單凸結構的壓電石英晶片,其加工步驟如下:As shown in FIG. 5 and FIG. 6, a piezoelectric quartz wafer having a single convex structure is processed as follows:
S1、取出一定規格的石英基板7,並對石英基板7的上、下表面進行研磨、拋光處理;S1, taking out a quartz substrate 7 of a certain specification, and grinding and polishing the upper and lower surfaces of the quartz substrate 7;
S2、通過旋塗或噴淋方式在石英基板7表面形成厚度均勻的光刻抗刻蝕保護層ER,然後使用光刻曝光在光刻抗刻蝕保護層ER上,在表面形成待刻蝕圖形;S2, forming a uniform thickness lithographic anti-etching protective layer ER on the surface of the quartz substrate 7 by spin coating or spraying, and then using lithographic exposure on the lithographic anti-etching protective layer ER to form a pattern to be etched on the surface ;
S3、通過濕法刻蝕或幹法刻蝕方式在石英基板7上表面刻蝕,從而在石英基板7表面形成凸台4,凸台4的刻蝕深度通過控制濕法刻蝕或幹法刻蝕反應時間決定;S3, etching the surface of the quartz substrate 7 by wet etching or dry etching, thereby forming a bump 4 on the surface of the quartz substrate 7. The etching depth of the bump 4 is controlled by wet etching or dry etching. The eclipse reaction time is determined;
S4、去除步驟S3中的光刻抗刻蝕保護層ER並將石英基板7表面清洗乾淨;S4, removing the lithographic anti-etching protective layer ER in step S3 and cleaning the surface of the quartz substrate 7;
S5、清洗結束後,先通過旋塗或噴淋方式在石英基板7表面形成厚度均勻的光刻抗刻蝕保護層ER,再使用光刻曝光在光刻抗刻蝕保護層ER上表面形成待刻蝕圖形;S5. After the cleaning is completed, a lithographic anti-etching protective layer ER having a uniform thickness is formed on the surface of the quartz substrate 7 by spin coating or spraying, and then formed on the upper surface of the lithographic anti-etching protective layer ER by photolithography exposure. Etching the pattern;
S6、通過濕法刻蝕、幹法刻蝕、鐳射刻蝕、物理噴砂等方式在石英基板7上表面刻蝕,從而形成第一通槽5和第二通槽6;S6, the surface of the quartz substrate 7 is etched by wet etching, dry etching, laser etching, physical blasting, etc., thereby forming a first through groove 5 and a second through groove 6;
S7、去除光刻抗刻蝕保護層ER並將石英基板7表面清洗乾淨,從而制得具有單凸結構的壓電石英晶片。S7. The lithographic anti-etching protective layer ER is removed and the surface of the quartz substrate 7 is cleaned, thereby producing a piezoelectric quartz wafer having a single convex structure.
S8、在石英基板7上加工出切割定位孔8;S8, processing a cutting positioning hole 8 on the quartz substrate 7;
S9、使用鐳射切割或刀片切割沿著切割定位孔8對石英基板7進行切割分離,從而實現了石英晶片的加工。S9. Cutting and separating the quartz substrate 7 along the cutting positioning hole 8 by using laser cutting or blade cutting, thereby realizing processing of the quartz wafer.
實施例二:Embodiment 2:
如圖7~9所示,本實施二與實施例一的不同點在於:所述的保護框2的任意一條短邊與中央構件1之間連接有兩個連接部3,兩個連接部3增加了中央構件1和與保護框2之間的機械強度。As shown in FIG. 7 to FIG. 9 , the difference between the second embodiment and the first embodiment is that two short connecting portions 3 and two connecting portions 3 are connected between the short side of the protective frame 2 and the central member 1 . The mechanical strength between the central member 1 and the protective frame 2 is increased.
綜上所述,本發明所揭露之技術手段確能有效解決習知等問題,並達致預期之目的與功效,且申請前未見諸於刊物、未曾公開使用且具長遠進步性,誠屬專利法所稱之發明無誤,爰依法提出申請,懇祈 鈞上惠予詳審並賜准發明專利,至感德馨。In summary, the technical means disclosed by the present invention can effectively solve the problems of the prior knowledge, achieve the intended purpose and efficacy, and are not found in the publication before publication, have not been publicly used, and have long-term progress, The invention referred to in the Patent Law is correct, and the application is filed according to law, and the company is invited to give a detailed examination and grant a patent for invention.
惟以上所述者,僅為本發明之數種較佳實施例,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明書內容所作之等效變化與修飾,皆應仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, that is, the equivalent changes and modifications made by the scope of the invention and the contents of the invention are all It should remain within the scope of this invention.
1‧‧‧中央構件1‧‧‧Central components
2‧‧‧保護框 2‧‧‧protection frame
3‧‧‧連接部 3‧‧‧Connecting Department
4‧‧‧凸台 4‧‧‧Boss
5‧‧‧第一通槽 5‧‧‧ first slot
6‧‧‧第二通槽 6‧‧‧Second pass
7‧‧‧石英基板 7‧‧‧Quartz substrate
8‧‧‧切割定位孔 8‧‧‧ cutting positioning hole
圖1係本發明實施例一的結構示意圖。 圖2係圖1的俯視圖。 圖3係圖2的A-A剖視圖。 圖4係圖1的仰視圖。 圖5係本發明實施例一基於石英基板經製造工藝加工後產品俯視圖。 圖6係圖5的仰視圖。 圖7係本發明實施例二的結構示意圖。 圖8係圖7的俯視圖。 圖9係圖7的仰視圖。 圖10係本發明實施例二基於石英基板經製造工藝加工後產品俯視圖。 圖11係圖10仰視圖。FIG. 1 is a schematic structural view of Embodiment 1 of the present invention. Figure 2 is a plan view of Figure 1. Figure 3 is a cross-sectional view taken along line A-A of Figure 2; Figure 4 is a bottom view of Figure 1. FIG. 5 is a top view of a product based on a quartz substrate processed by a manufacturing process according to Embodiment 1 of the present invention. Figure 6 is a bottom view of Figure 5. FIG. 7 is a schematic structural view of Embodiment 2 of the present invention. Figure 8 is a plan view of Figure 7. Figure 9 is a bottom view of Figure 7. FIG. 10 is a top view of the product according to the second embodiment of the present invention after the quartz substrate is processed by the manufacturing process. Figure 11 is a bottom view of Figure 10.
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