TWI716931B - Taiko wafer ring cut process method - Google Patents

Abstract

A Taiko wafer ring cut process method is provided. The Taiko wafer ring cut process method includes the following steps. A Taiko wafer is disposed on the platform. The Taiko wafer is performing by laser ring cutting so that a Taiko ring and an edge portion of the Taiko wafer are separated from a wafer portion of the Taiko wafer. The wafer portion of the Taiko wafer is adhered to a frame.

Description

Taiko wafer ring cutting process method

The invention relates to a process method for circular cutting of Tai drum wafers.

In order to meet the needs of ultra-thin wafers, Taiko polishing is currently the most critical process. However, for wafer packaging, the Taiko ring produced by Taiko polishing is an important factor affecting the process. Taiko polishing technology does not Instead of thinning the entire surface of the wafer, only the middle part of the wafer is thinned, and the edge of the wafer is not polished and thinned, leaving the edge of the wafer with the Japanese drum frame. The same ring is called a Taiko Ring. The Taiko Ring can support the edge of the wafer so that the wafer will not warpage.

The conventional technology is a frame mount process (frame mount process) in which the wafer is fixed to the dicing frame after the thinning process, and then the dicing blade is used to remove the Taiko ring to facilitate the packaging plant operations. Because the Taiko ring protrudes from the edge of the wafer, the frame mounting process will cause incomplete coverage or air bubbles in the Taiko ring area. Furthermore, during the cutting process, the wafer is easily affected by the high-speed cutting action of the blade, which can easily cause wafer cracks, edge cracking, and edge chipping during the blade cutting process, making the yield rate impossible. Achieve optimization.

In addition, the Taiko ring needs to be removed after the above-mentioned cutting. Because the Taiko ring is still stuck by the tape at this time, when the Taiko ring is removed from the tape, the tape will be pulled in conjunction with the abnormal phenomenon of crystal edge cracks.

Therefore, how to improve and provide a "Taiku wafer ring cutting process method" to avoid the above-mentioned problems is a problem to be solved in the industry.

The present invention provides a ring-cutting process method for Taiko wafers, which uses laser cutting to improve the micro-chip after cutting and increase the yield rate of Taiko ring-cutting, and by changing the manufacturing process, this Avoid the abnormal phenomenon of crystal edge cracks caused by pulling the tape when the Taiko ring is removed.

An embodiment of the present invention provides a ring-cutting process method for Tai drum wafers, which includes the following steps: placing a Tai drum wafer on a platform, wherein the Tai drum wafer includes a wafer part, an edge part and a Tai drum ring, The edge part is located at the outer edge of the wafer part, and the Tai drum ring is connected to the edge part; a laser beam is used to cut the Tai drum wafer in a ring shape so that the edge part of the Tai drum wafer and the Tai drum ring are separated from the wafer part of the Tai drum wafer ; Paste the wafer part of the Taiko wafer on a frame.

In an embodiment of the present invention, the step of placing the Tai drum wafer on the platform includes the following steps: using vacuum suction to fix the Tai drum wafer on the platform.

In an embodiment of the present invention, before the step of fixing the Tai drum wafer on the platform by vacuum suction, it includes the following steps: positioning the Tai drum wafer on the platform.

In an embodiment of the present invention, the step of positioning the Taiko wafer on the platform includes the following steps: placing a plurality of positioning parts on the platform, and making the positioning parts abut against the Taiko ring of the Taiko wafer.

In an embodiment of the present invention, the above-mentioned step of using a laser beam to perform circular cutting of the Tai drum wafer includes the following steps: the laser beam rotates around the Tai drum wafer to cut the edge portion of the Tai drum wafer; and Remove the edge of the Taiko wafer and the Taiko ring.

In an embodiment of the present invention, the step of pasting the wafer portion of the Taiko wafer on the frame includes the following steps: placing the frame on the wafer portion; and pasting an adhesive tape on the wafer portion and the frame.

Based on the above, in the Taiko wafer ring cutting process method of the present invention, the laser cutting method is used to replace the traditional blade cutting, and the laser beam is adjusted to improve the micro-chip after cutting and enhance the Taiko Ring cutting yield.

Moreover, in order to improve the abnormal phenomenon of crystal edge cracks caused by the pulling of the belt when the Taiko ring is removed, the present invention changes the manufacturing process to first perform the Laser Ring Cutting operation to cut the Taiko ring, and then perform the frame During the frame mount process, there will be no abnormal phenomenon of crystal edge cracks caused by pulling the tape.

In order to make the present invention more obvious and understandable, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows.

The specific implementation of the present invention will be further described below with reference to the drawings and embodiments. The following embodiments are only used to explain the technical solutions of the present invention more clearly, and cannot be used to limit the protection scope of the present invention.

It should be noted that, in the description of each embodiment, when an element is described as being "above/upper" or "below/under" another element, it means that it is directly or indirectly on the other element In the case of or below, it may include other elements arranged in between; the so-called "directly" means that no other intermediate elements are arranged in between. The descriptions of "above/up", "below/down", etc. are based on diagrams, but also include other possible direction changes. In addition, for convenience and clarity of description, the thickness or size of each element in the drawings is expressed in an exaggerated or omitted or schematic manner, and the size of each element is not entirely its actual size.

Figure 1 is a schematic diagram of an embodiment of the Taiko polishing process of the present invention. Please refer to FIG. 1, in this embodiment, the Taiko wafer ring cutting process method can be used for the Taiko wafer W formed by the backside grinding (BG) process of wafer thinning. As shown in FIG. 1, the grinding wheel 40 is used to grind the grinding area D of the wafer on the placement platform 30, and the grinding area D of the wafer is located in the middle of the wafer, as shown in FIG. 1, for example, For the Taiko wafer W after grinding by the grinding wheel 40, the grinding area D is the part that is removed after being ground/etched. The Taiko wafer W includes a wafer part WD, an edge part WE and a Taiko ring TR. The part WE is located at the outer edge of the wafer part WD, and the Tai drum ring TR is connected to the edge part WE, that is, the edge part WE is connected between the wafer part WD and the Tai drum ring TR. The Tai drum ring TR can connect the edge part of the Tai drum wafer W WE support can greatly reduce the warpage of Taiko wafer W when it is extremely thin. Hereinafter, the method of the ring-cutting process for Tai drum wafers of the present invention will be described with reference to FIGS. 2 to 5.

FIG. 2 is a schematic diagram of an embodiment of placing Tai drum wafers on a platform according to the present invention. 3A is a schematic diagram of circular cutting of Tai drum wafers by laser beams of the present invention. 3B is a schematic diagram of the Tai drum wafer in FIG. 3A. 3C is a partial schematic diagram of circular cutting of the Tai drum wafer in FIG. 3A. FIG. 3D is a schematic diagram of the wafer portion of the Tai drum wafer of FIG. 3A after being cut. FIG. 4A is a schematic diagram of the wafer portion of the Taiko wafer of the present invention attached to the frame. FIG. 4B is a schematic top view of the wafer portion of the Taiko wafer of FIG. 4A attached to the frame. FIG. 5 is a flow chart of the ring-cutting process method for Tai drum wafers of the present invention. The ring-cutting process method S100 of Tai drum wafers of the present invention includes the following steps S110 to S130. First, as shown in FIG. 2, step S110 is performed, and a Tai drum wafer W is placed on a platform 50, wherein the Tai drum wafer W It includes a wafer part WD, an edge part WE and a Taiko ring TR. In detail, the step of placing the Tai drum wafer W on the platform 50 includes the following steps: positioning the Tai drum wafer W on the platform 50. Taking FIG. 2 as an example, placing a plurality of positioning parts 52 on the platform 50 Above, the positioning portion 52 is made to abut against the Tai drum ring TR of the Tai drum wafer W, thereby positioning and fixing the position of the Tai drum wafer W. This embodiment does not limit the method of fixing the Tai drum wafer W. For example, the platform 50 can be a vacuum suction platform. In other words, the present invention can use vacuum suction to fix the Tai drum wafer W on the platform 50.

Next, proceed to step S120, using a laser beam L to perform circular cutting on the Tai drum wafer W. As shown in FIG. 3A, the present invention can provide a laser module 60 which is arranged on the platform 50. And the laser module 60 is used to emit the laser beam L. In this embodiment, the distance from the center of the Taiko wafer W to the edge portion WE of the Taiko wafer W is set as the radius of rotation, and the polarizer in the laser module 60 allows the laser beam L to be machine-dependent The table sets the pattern to hit so that the laser beam L rotates around the Tai drum wafer W to cut the edge part WE of the Tai drum wafer W (as shown in Figure 3A or Figure 3C). The beam is cut so that the Taiko ring TR connected to the edge part WE of the Taiko wafer W is also cut, so that the edge part WE and the Taiko ring TR of the Taiko wafer W can be separated from the wafer part WD of the Taiko wafer W. Next, remove the edge part WE and the Tai drum ring TR of the Tai drum wafer W, leaving the wafer part WD of the Tai drum wafer W (as shown in FIG. 3D).

Next, proceed to step S130. As shown in FIGS. 4A and 4B, the wafer portion WD of the Tai drum wafer W is pasted on a frame 70, which is, for example, a metal frame. It should be noted that, in order to facilitate the description of the position of the tape 80 and the wafer portion WD and the frame 70 in FIG. 4A, the frame 70 is placed under the wafer portion WD, and the tape 80 is pasted between the wafer portion WD and the frame 70 Above, in fact, the frame 70 and the tape 80 are respectively located on the upper and lower sides of the wafer portion WD, the frame 70 is placed on the wafer portion WD, and the tape 80 is pasted under the wafer portion WD and the frame 70. In detail, the step of pasting the wafer part WD of the Taiko wafer W on the frame 70 includes the following steps: After removing the edge part WE and the Taiko ring TR of the Taiko wafer W, place the frame 70 on the wafer Part of the WD. Then, a tape 80 is pasted on the wafer portion WD and the frame 70 to fix the wafer portion WD on the frame 70. In other words, this step is the frame mount process, using a tape 80 with an adhesive on one side. The tape 80 is a dicing tape to stick the wafer part WD to the frame 70 for dicing. on.

To sum up, in the Taiko wafer ring-cutting process method of the present invention, the laser cutting method is used to replace the traditional blade cutting, and the laser beam is adjusted to improve the micro-chip and micro-chip after cutting. Improve the yield rate of Taiko ring cutting.

Moreover, in order to improve the abnormal phenomenon of crystal edge cracks caused by the pulling of the belt when the Taiko ring is removed, the present invention changes the manufacturing process to first perform the Laser Ring Cutting operation to cut the Taiko ring, and then perform the frame During the frame mount process, there will be no abnormal phenomenon of crystal edge cracks caused by pulling the tape.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make slight changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to those defined by the attached patent scope.

30 Placement platform 40 Grinding wheel 50 platform 52 Positioning Department 60 Laser module 70 frame 80 tape D Grinding area L Laser beam W Taiko Wafer WD Wafer section WE Marginal part TR Taiko ring S100 Taiko wafer ring cutting process method S110~S130 step

Figure 1 is a schematic diagram of an embodiment of the Taiko polishing process of the present invention. FIG. 2 is a schematic diagram of an embodiment of placing Tai drum wafers on a platform according to the present invention. 3A is a schematic diagram of circular cutting of Tai drum wafers by laser beams of the present invention. 3B is a schematic diagram of the Tai drum wafer in FIG. 3A. 3C is a partial schematic diagram of circular cutting of the Tai drum wafer in FIG. 3A. FIG. 3D is a schematic diagram of the wafer portion of the Tai drum wafer of FIG. 3A after being cut. FIG. 4A is a schematic diagram of the wafer portion of the Taiko wafer of the present invention attached to the frame. FIG. 4B is a schematic top view of the wafer portion of the Taiko wafer in FIG. 4A being pasted on the frame. FIG. 5 is a flow chart of the ring-cutting process method for Tai drum wafers of the present invention.

S100 Taiko wafer ring cutting process method S110~S130 step

Claims (4)

A process method for ring-cutting of Tai drum wafers includes the following steps: placing a Tai drum wafer on a platform, wherein the Tai drum wafer includes a wafer portion, an edge portion and a Tai drum ring, and the edge portion is located on the wafer. At the outer edge of the round part, the Taiko drum ring is connected to the edge part, including the following steps: positioning the position of the Taiko drum wafer on the platform, including the following steps: placing a plurality of positioning parts on the platform so that the The positioning portion is against the Tai drum ring of the Tai drum wafer; the Tai drum wafer is circularly cut by a laser beam, so that the edge portion of the Tai drum wafer is separated from the Tai drum ring from the crystal of the Tai drum wafer Round part; and sticking the wafer part of the Taiko wafer after ring-cutting to a frame. As described in the first item of the scope of patent application, the Tai drum wafer ring cutting process method, wherein the step of placing the Tai drum wafer on the platform includes the following steps: using vacuum suction to fix the Tai drum wafer on On the platform. As described in the first item of the scope of patent application, the ring-cutting process method for Tai drum wafers, wherein the step of using the laser beam to perform ring-cutting on the Tai drum wafers includes the following steps: The wafer is rotated at the center to cut the edge portion of the Tai drum wafer; and the edge portion of the Tai drum wafer and the Tai drum ring are removed. As described in the first item of the scope of patent application, the ring-cutting process method for Tai drum wafers, wherein the step of pasting the wafer portion of the Tai drum wafers on the frame includes the following steps: placing the frame on Part of the wafer; and Pasting an adhesive tape on the wafer portion and the frame to fix the wafer portion on the frame.

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