CN215933590U - Semiconductor rectifier bridge for communication - Google Patents
Semiconductor rectifier bridge for communication Download PDFInfo
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- CN215933590U CN215933590U CN202122302834.6U CN202122302834U CN215933590U CN 215933590 U CN215933590 U CN 215933590U CN 202122302834 U CN202122302834 U CN 202122302834U CN 215933590 U CN215933590 U CN 215933590U
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- chip
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- supporting
- supporting region
- lead
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Abstract
The utility model discloses a semiconductor rectifier bridge for communication, comprising: cladding is in first chip base plate, second chip base plate and the first pin, the second pin that stretch out in the epoxy packaging body of one end, first chip base plate includes the first lead zone of the first supporting region one end of first supporting region and perpendicular to, and the one end that the second lead zone is close to the second supporting region has a first portion of bending downwards to horizontal part and lower horizontal part are formed to the both sides at first portion of bending, and are located the first supporting region outside the upper surface of lower horizontal part is less than the lower surface in first supporting region in vertical direction, the upper surface interval in first supporting region is provided with third chip, fourth chip, the region that lies in between third chip, the fourth chip in the first supporting region is opened there is a through-hole. The utility model can not only avoid the product failure problem caused by the collision between chips and between the chips and the substrate, but also improve the impact force of epoxy on the substrate during injection molding.
Description
Technical Field
The utility model relates to the technical field of semiconductor packaging, in particular to a semiconductor rectifier bridge for communication.
Background
In recent years, the trend of miniaturization and light weight development of power supply products is more and more remarkable, and higher requirements are also put forward on the power density of patch type rectifier bridge products. The existing packaging structure is limited by the inner space of a product, a chip with a larger size is difficult to package, and the improvement of the power density of a rectifier bridge product is limited. The existing packaging structure mainly has the following defects: when packaging large-size chips, the chip spacing is not sufficient, and there is a risk that the chips collide together to cause product failure.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a semiconductor rectifier bridge for communication, which can not only avoid the problem of product failure caused by collision between chips and between the chips and a substrate, but also improve the impact force of epoxy on the substrate during injection molding.
In order to achieve the purpose, the utility model adopts the technical scheme that: a semiconductor rectifier bridge for communication, comprising: the first chip substrate, the second chip substrate and one end of the first chip substrate are wrapped in the epoxy packaging body, the first pin and the second pin are extended from the epoxy packaging body, the first chip substrate comprises a first supporting area and a first lead area which is perpendicular to one end of the first supporting area, the second chip substrate comprises a second supporting area which is parallel to the first supporting area and is arranged at an interval, and a second lead area which is perpendicular to one end of the second supporting area and is positioned at one end of the first supporting area and is far away from one end of the first lead area, one end of the second lead area, which is close to the second supporting area, is provided with a downward first bending part, so that an upper horizontal part and a lower horizontal part are formed at two sides of the first bending part, the upper surface of the lower horizontal part, which is positioned at the outer side of the first supporting area, is lower than the lower surface of the first supporting area in the vertical direction, a third chip and a fourth chip are arranged at intervals on the upper surface of the first supporting area, and a through hole is formed in the area, positioned between the third chip and the fourth chip, of the first support area.
The further improved scheme in the technical scheme is as follows:
1. in the above solution, the third chip is located at one end of the first supporting region close to the second lead region.
2. In the above scheme, a first supporting region extends outwards from one side of the third chip close to the second lead region.
3. In the above scheme, the third chip extends to the upper side of the second lead region near the edge of one side of the first support region.
4. In the above scheme, the lower horizontal portion has a downward second bending portion near the edge region of the epoxy encapsulation body, so that the lower horizontal portion extends out of the lower surface of the epoxy encapsulation body region and is flush with the lower surface of the epoxy encapsulation body.
Due to the application of the technical scheme, compared with the prior art, the utility model has the following advantages and effects:
according to the semiconductor rectifier bridge for communication, the two chip substrates which are close to each other in the horizontal direction are separated in the vertical direction through the arrangement of the first bending part on the second lead area, namely the adjacent part of the second chip substrate and the first chip substrate, so that the chips can be arranged at the edges of the chip substrates, the distance between the third chip and the fourth chip is increased while the product structure is not increased, and a through hole can be formed between the third chip and the fourth chip, so that the product failure problem caused by collision between the chips and the substrate can be avoided, the impact force of epoxy on the substrates during injection molding can be improved, the damage to the epoxy inner wall structure and the chips can be avoided, and the overall processing yield of the product and the stability in the long-term use process can be improved.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor rectifier bridge for communication according to the present invention;
FIG. 2 is a sectional view taken along line A-A in FIG. 1.
In the above drawings: 1. an epoxy package; 2. a first chip substrate; 21. a first support region; 22. a first lead region; 3. a second chip substrate; 31. a second support region; 32. a second lead section; 4. a first pin; 5. a second pin; 61. a first chip; 62. a second chip; 63. a third chip; 64. a fourth chip; 7. connecting sheets; 8. a first bending portion; 91. an upper horizontal portion; 92. a lower horizontal portion; 10. a second bending portion; 13. and a through hole.
Detailed Description
The utility model is further described with reference to the following figures and examples:
example 1: a semiconductor rectifier bridge for communication, comprising: first chip substrate 2, second chip substrate 3 and one end of first pin 4, second pin 5 that stretch out from epoxy package 1 of cladding in epoxy package 1, first chip substrate 2 includes first support region 21 and the first lead wire district 22 of the first support region 21 one end of perpendicular to, second chip substrate 3 includes the second support region 31 that sets up with first support region 21 parallel interval and perpendicular to second support region 31 one end and is located the first support region 21 and keeps away from the second lead wire district 32 in the outside of first lead wire district 22 one end, the one end that second lead wire district 32 is close to second support region 31 has a decurrent first bending portion 8 to form upper horizontal part 91 and lower horizontal part 92 in first bending portion 8 both sides, and be located the first support region 21 outside the upper surface of lower horizontal part 92 is lower than the lower surface of first support region 21 in vertical direction, the height difference between the upper horizontal part and the lower horizontal part is 0.1 cm;
a third chip 63 and a fourth chip 64 are arranged on the upper surface of the first supporting region 21 at intervals, and a through hole 13 is formed in a region, located between the third chip 63 and the fourth chip 64, of the first supporting region 21; the third chip 63 is located at one end of the first support region 21 close to the second lead region 32; the third chip 63 extends outward from a side thereof adjacent to the second lead region 32 to form a first support region 21;
the lower horizontal part 92 is provided with a downward second bending part 10 near the edge region of the epoxy packaging body 1, so that the lower surface of the lower horizontal part 92 extending out of the region of the epoxy packaging body 1 is flush with the lower surface of the epoxy packaging body 1, and the height difference of two sides of the second bending part is 0.2 cm; the first chip substrate 2 and the second chip substrate 3 are copper substrates.
Example 2: a semiconductor rectifier bridge for communication, comprising: first chip substrate 2, second chip substrate 3 and one end of first pin 4, second pin 5 that stretch out from epoxy package 1 of cladding in epoxy package 1, first chip substrate 2 includes first support region 21 and the first lead wire district 22 of the first support region 21 one end of perpendicular to, second chip substrate 3 includes the second support region 31 that sets up with first support region 21 parallel interval and perpendicular to second support region 31 one end and is located the first support region 21 and keeps away from the second lead wire district 32 in the outside of first lead wire district 22 one end, the one end that second lead wire district 32 is close to second support region 31 has a decurrent first bending portion 8 to form upper horizontal part 91 and lower horizontal part 92 in first bending portion 8 both sides, and be located the first support region 21 outside the upper surface of lower horizontal part 92 is lower than the lower surface of first support region 21 in vertical direction, the height difference between the upper horizontal part and the lower horizontal part is 0.1 cm;
a third chip 63 and a fourth chip 64 are arranged on the upper surface of the first supporting region 21 at intervals, a through hole 13 is formed in a region between the third chip 63 and the fourth chip 64 on the first supporting region 21, and the third chip 63 extends to the upper side of the edge of the second lead region 32 close to one side of the first supporting region 21;
the first chip 61 and the second chip 62 are disposed on the upper surface of the second chip substrate 3 at an interval, the positive electrodes of the first chip 61 and the second chip 62 are electrically conducted with the first chip substrate 2, the negative electrodes of the third chip 63 and the fourth chip 64 are disposed on the upper surface of the first chip substrate 2 at an interval, the negative electrodes of the first chip 61 and the positive electrodes of the third chip 63 are electrically conducted with the second chip substrate 3, the negative electrodes of the third chip 63 and the positive electrodes of the fourth chip 63 are electrically connected with one end of the first pins 4 in the epoxy package 1 through a connecting sheet 7, and the negative electrodes of the second chip 62 and the positive electrodes of the fourth chip 64 are electrically connected with one end of the second pins 5 in the epoxy package 1 through another connecting sheet 7.
When the semiconductor rectifier bridge for communication is adopted, the second chip substrate and the adjacent part of the first chip substrate are passed through, namely, the first bending part on the second lead area is arranged, two chip substrates which are close to each other in the horizontal direction are subjected to space separation in the vertical direction, the chips can be arranged at the edges of the chip substrates, a third chip is added while the product structure is not increased, the distance between the fourth chips is increased, and a through hole can be formed between the fourth chips, so that the product failure problem caused by collision between the chips and the substrates can be avoided, the impact force of epoxy on the substrates during injection molding can be improved, the damage to the epoxy inner wall structure and the chips is avoided, and the overall processing yield and the stability in the long-term use process of the products are improved.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (5)
1. A semiconductor rectifier bridge for communication, comprising: first chip base plate (2), second chip base plate (3) and one end of cladding in epoxy packaging body (1) are from first pin (4), second pin (5) that stretch out in epoxy packaging body (1), its characterized in that: the first chip substrate (2) comprises a first supporting region (21) and a first lead region (22) perpendicular to one end of the first supporting region (21), the second chip substrate (3) comprises a second supporting region (31) and a second lead region (32), the second supporting region (31) is parallel to the first supporting region (21) at an interval, the second lead region (32) is perpendicular to one end of the second supporting region (31) and is positioned on the outer side of one end, far away from the first lead region (22), of the first supporting region (21), one end, close to the second supporting region (31), of the second lead region (32) is provided with a downward first bending part (8), so that an upper horizontal part (91) and a lower horizontal part (92) are formed on two sides of the first bending part (8), and the upper surface of the lower horizontal part (92) positioned on the outer side of the first supporting region (21) is lower than the lower surface of the first supporting region (21) in the vertical direction;
the chip packaging structure is characterized in that a third chip (63) and a fourth chip (64) are arranged on the upper surface of the first supporting area (21) at intervals, and a through hole (13) is formed in the area, located between the third chip (63) and the fourth chip (64), of the first supporting area (21).
2. The semiconductor rectifier bridge for communication according to claim 1, wherein: the third chip (63) is located at one end of the first support region (21) close to the second lead region (32).
3. The semiconductor rectifier bridge for communication according to claim 2, wherein: the third chip (63) is extended outwards to form a first supporting area (21) close to one side of the second lead area (32).
4. A semiconductor rectifier bridge for communication according to claim 3, wherein: the third chip (63) extends to the second lead region (32) above the edge of one side of the first support region (21).
5. The semiconductor rectifier bridge for communication according to claim 1, wherein: the lower horizontal portion (92) is provided with a downward second bending portion (10) close to the edge area of the epoxy packaging body (1), so that the lower horizontal portion (92) extends out of the lower surface of the area of the epoxy packaging body (1) and is flush with the lower surface of the epoxy packaging body (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122302834.6U CN215933590U (en) | 2021-09-23 | 2021-09-23 | Semiconductor rectifier bridge for communication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122302834.6U CN215933590U (en) | 2021-09-23 | 2021-09-23 | Semiconductor rectifier bridge for communication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215933590U true CN215933590U (en) | 2022-03-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122302834.6U Active CN215933590U (en) | 2021-09-23 | 2021-09-23 | Semiconductor rectifier bridge for communication |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215933590U (en) |
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2021
- 2021-09-23 CN CN202122302834.6U patent/CN215933590U/en active Active
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