CN115910976A

CN115910976A - Semiconductor rectifier bridge

Info

Publication number: CN115910976A
Application number: CN202111115592.8A
Authority: CN
Inventors: 何洪运; 郝艳霞; 刘玉龙
Original assignee: Suzhou Goodark Electronics Co ltd
Current assignee: Suzhou Goodark Electronics Co ltd
Priority date: 2021-09-23
Filing date: 2021-09-23
Publication date: 2023-04-04

Abstract

The invention discloses a semiconductor rectifier bridge, comprising: the first chip substrate and the second chip substrate are wrapped in the epoxy packaging body, and one end of the first chip substrate and one end of the second chip substrate extend out of the epoxy packaging body; the upper surface interval of first support area is provided with third chip, fourth chip, the region that lies in between third chip, fourth chip on the first support area is opened has a through-hole. The invention can avoid the product failure problem caused by collision between chips and between the chips and the substrate, improve the impact force of epoxy on the substrate during injection molding, and improve the overall processing yield of the product and the stability in the long-term use process.

Description

Semiconductor rectifier bridge

Technical Field

The invention relates to the technical field of semiconductor packaging, in particular to a semiconductor rectifier bridge.

Background

In recent years, the trend of miniaturization and light weight development of power supply products is more and more remarkable, and higher requirements are also put forward on the power density of patch type rectifier bridge products. The existing packaging structure is limited by the inner space of a product, a chip with a larger size is difficult to package, and the improvement of the power density of a rectifier bridge product is limited.

The existing packaging structure mainly has the following defects: firstly, when a large-size chip is packaged, the distance between the chips is insufficient, and the risk of product failure caused by collision of the chips is high; secondly, the position deviation of the chip in the high-temperature welding process is large, and under the condition that the chip spacing is insufficient, the risk that the chips collide together is increased.

Disclosure of Invention

The invention aims to provide a semiconductor rectifier bridge which can avoid the problem of product failure caused by collision between chips and between the chips and a substrate, improve the impact force of epoxy on the substrate during injection molding and improve the overall processing yield of a product and the stability of the product in a long-term use process.

In order to achieve the purpose, the invention adopts the technical scheme that: a semiconductor rectifier bridge, comprising: the first chip substrate, the second chip substrate and the first pins and the second pins, wherein one ends of the first chip substrate and the second pins extend out of the epoxy package body, the first chip substrate comprises a first supporting area and a first lead area which is perpendicular to one end of the first supporting area, the second chip substrate comprises a second supporting area which is parallel to the first supporting area at an interval, and a second lead area which is perpendicular to one end of the second supporting area and is positioned at one end of the first supporting area, far away from one end of the first lead area, one end of the second lead area, close to the second supporting area, is provided with a downward first bending part, so that an upper horizontal part and a lower horizontal part are formed at two sides of the first bending part, and the upper surface of the lower horizontal part, positioned at the outer side of the first supporting area, is lower than the lower surface of the first supporting area in the vertical direction;

the upper surface interval of first support region is provided with third chip, fourth chip, the region that lies in between third chip, the fourth chip on the first support region is opened there is a through-hole, the junction in second support region and second lead district and lie in and have a breach near first portion of bending side edge, the setting is pressed close to with first portion of bending on the horizontal plane to the breach.

The further improved scheme in the technical scheme is as follows:

1. in the above scheme, a support portion is provided in an area on each of the first chip substrate and the second chip substrate, where the area is used for being connected to a chip, and the area of the support portion is smaller than the area of the lower surface of the chip, and each support portion is located right below the central area of the corresponding chip.

2. In the above scheme, the side surface at the edge of the supporting part is a slope.

3. In the above scheme, the notch is a semicircular notch.

4. In the above solution, one end of each of the first lead region and the second lead region, which is far away from the first support region and the second support region, extends outward from the same side of the epoxy package body.

5. In the above solution, the first lead pad and the second lead pad have a second bending portion respectively near the edge region of the epoxy package, so that the lower surfaces of the first lead pad and the second lead pad extending out of the region of the epoxy package are flush with the lower surface of the epoxy package.

6. In the above solution, the third chip is located at one end of the first supporting region close to the second lead region.

7. In the above scheme, a first supporting region extends outwards from one side of the third chip close to the second lead region.

Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages and effects:

1. according to the semiconductor rectifier bridge, the two chip substrates which are close to each other in the horizontal direction are separated in the vertical direction through the arrangement of the first bending part on the second lead area, so that the chips can be arranged at the edges of the chip substrates, the distance between the third chip and the fourth chip is increased while the product structure is not increased, and the through hole can be formed between the third chip and the fourth chip, so that the product failure problem caused by collision between the chips and the substrate can be avoided, the impact force of epoxy on the substrate during injection molding can be improved, the damage to the epoxy inner wall structure and the chips can be avoided, the integral processing yield of the product is improved, and the stability in the long-term use process is improved; further, through the setting of pressing close to the breach of first portion of bending, avoid leading to second support area edge to produce because of first portion of bending and warp, and then lead to its upper chip slope, warpage or highly mismatch to arouse that chip and base plate connect or weld the not firm situation, guarantee the position accuracy of chip and the stability of connecting to improve holistic yield of product and quality.

2. According to the semiconductor rectifier bridge, the areas, used for being connected with the chips, of the first chip substrate and the second chip substrate are respectively provided with the supporting parts, the areas of the supporting parts are smaller than the area of the lower surface of the chip, and each supporting part is positioned right below the central area of the corresponding chip, so that the position deviation and rotation of the chips in the high-temperature welding process can be reduced, the position accuracy of chip welding is improved, the connection strength between epoxy and the chips can be improved, and the stability of products is improved.

Drawings

FIG. 1 is a schematic structural diagram of a semiconductor rectifier bridge according to the present invention;

FIG. 2 is a schematic diagram of a partial structure of a semiconductor rectifier bridge according to the present invention;

FIG. 3 isbase:Sub>A sectional view taken along line A-A.

In the above drawings: 1. an epoxy package; 2. a first chip substrate; 21. a first support region; 22. a first lead region; 3. a second chip substrate; 31. a second support region; 32. a second lead section; 4. a first pin; 5. a second pin; 6. a chip; 61. a first chip; 62. a second chip; 63. a third chip; 64. a fourth chip; 7. connecting sheets; 8. a first bending portion; 91. an upper horizontal portion; 92. a lower horizontal portion; 10. a second bending portion; 11. a support portion; 12. a notch; 13. and a through hole.

Detailed Description

The invention is further described with reference to the following figures and examples:

example 1: a semiconductor rectifier bridge, comprising: the first chip substrate 2 and the second chip substrate 3 which are wrapped in the epoxy package body 1 and the first pins 4 and the second pins 5 of which one ends extend out of the epoxy package body 1, wherein the first chip substrate 2 comprises a first support area 21 for connecting with at least two chips 6 and a first lead area 22 which is perpendicular to one end of the first support area 21, the second chip substrate 3 comprises a second support area 31 which is arranged in parallel with the first support area 21 at an interval and a second lead area 32 which is perpendicular to one end of the second support area 31 and is positioned at one end of the first support area 21 far away from one end of the first lead area 22, the joint of the second lead area 32 and the second support area 31 is provided with a first bending part 8, so that the upper surface of the second lead area 32 positioned at the outer side of the first support area 21 is lower than the lower surface of the first support area 21 in the vertical direction, the height difference between the upper and lower horizontal parts is 0.1cm, the joint of the second support area 31 and the second lead area 32 is positioned at the edge of the first bending part 8, and is provided with a notch 12 close to the first bending part and the edge of the upper surface;

first chip substrate 2 includes first support zone 21 and the first lead zone 22 of the first support zone 21 one end of perpendicular to, second chip substrate 3 includes the second support zone 31 that sets up with the parallel interval of first support zone 21 and perpendicular to second support zone 31 one end and lie in first support zone 21 and keep away from the second lead zone 32 in first lead zone 22 one end outside, second lead zone 32 is close to the one end of second support zone 31 and has a first bending portion 8 downwards to form upper horizontal part 91 and lower horizontal part 92 in first bending portion 8 both sides, and be located the first support zone 21 outside the upper surface of lower horizontal part 92 is less than the lower surface of first support zone 21 in vertical direction, and the difference in height between upper and lower horizontal part is 0.1cm, the upper surface interval of first support zone 21 is provided with third chip 63, fourth chip 64, the region that lies in between third chip 63, fourth chip 64 on first support zone 21 opens there is a through-hole 13.

A support part 11 is arranged on each of the first chip substrate 2 and the second chip substrate 3 in a region for connecting with the chip 6, the area of the support part 11 is smaller than that of the lower surface of the chip 6, and each support part 11 is positioned right below the central region of the corresponding chip 6; the side surface at the edge of the supporting part 11 is a slope; the notch 12 is a semicircular notch; one end of each of the first lead pad 22 and the second lead pad 32, which is far away from the first support pad 21 and the second support pad 31, extends outward from the same side of the epoxy package 1; the first lead region 22 and the second lead region 32 have a downward second bending portion 10 near the edge region of the epoxy package 1, so that the lower surfaces of the first lead region 22 and the second lead region 32 extending out of the epoxy package 1 are flush with the lower surface of the epoxy package 1, and the height difference between the two sides of the second bending portion is 0.2cm.

Example 2: a semiconductor rectifier bridge, comprising: the first chip substrate 2, the second chip substrate 3 and the first pins 4 and the second pins 5 with one ends extending from the epoxy package body 1 are wrapped in the epoxy package body 1, the first chip substrate 2 comprises a first support area 21 for connecting with at least two chips 6 and a first lead area 22 perpendicular to one end of the first support area 21, the second chip substrate 3 comprises a second support area 31 parallel to the first support area 21 and arranged at an interval, and a second lead area 32 perpendicular to one end of the second support area 31 and arranged at the outer side of one end of the first support area 21 far away from the first lead area 22, a first bending part 8 is arranged at the joint of the second lead area 32 and the second support area 31, so that the upper surface of the second lead area 32 arranged at the outer side of the first support area 21 is lower than the lower surface of the first support area 21 in the vertical direction, the height difference between the upper and lower horizontal parts is 0.1cm, the joint of the second support area 31 and the second lead area 32 is arranged at one side close to the first bending part 8, and the upper bending part 12 is arranged at the edge of the horizontal plane and the first bending part 12;

The third chip 63 is located at one end of the first supporting region 21 close to the second lead region 32; the third chip 63 extends outward from a side thereof adjacent to the second lead region 32 to form a first support region 21; a first chip 61 and a second chip 62 are arranged on the upper surface of the second chip substrate 3 at intervals, the respective anodes of the first chip 61 and the second chip 62 are electrically conducted with the first chip substrate 2, a third chip 63 and a fourth chip 64 are arranged on the upper surface of the first chip substrate 2 at intervals, the respective cathodes of the third chip 63 and the fourth chip 64 are electrically conducted with the second chip substrate 3, the cathode of the first chip 61 and the anode of the third chip 63 are electrically connected with one end of the first pin 4 in the epoxy package 1 through a connecting sheet 7, and the cathode of the second chip 62 and the anode of the fourth chip 64 are electrically connected with one end of the second pin 5 in the epoxy package 1 through another connecting sheet 7; the first chip substrate 2 and the second chip substrate 3 are copper substrates.

When the semiconductor rectifier bridge is adopted, the two chip substrates which are close to each other in the horizontal direction are separated in the vertical direction through the arrangement of the first bending part on the second lead area, so that the chips can be arranged at the edges of the chip substrates, the distance between the third chip and the fourth chip is increased while the product structure is not increased, and a through hole can be formed between the third chip and the fourth chip, so that the product failure problem caused by collision between the chips and the substrate can be avoided, the impact force of epoxy on the substrate during injection molding can be improved, the damage to the epoxy inner wall structure and the chips can be avoided, the integral processing yield of the product is improved, and the stability in the long-term use process is improved;

furthermore, through the arrangement of the notch close to the first bending part, the situation that the edge of the second supporting area is deformed due to the first bending part, so that the chip is inclined, warped or not matched in height to cause the virtual connection or the infirm welding of the chip and the substrate is avoided, the position precision and the connection stability of the chip are ensured, and the integral yield and quality of the product are improved;

in addition, it is used for the region of being connected with the chip separately on first chip base plate, the second chip base plate to be provided with a supporting part, the area of supporting part is less than the area of chip lower surface and every the supporting part is located and corresponds under the chip central zone, both can reduce the chip at the offset and the rotation of high temperature welding in-process, improve chip welded position accuracy, can improve the joint strength between epoxy and the chip again, improve the stability of product.

The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims

1. A semiconductor rectifier bridge, comprising: first chip base plate (2), second chip base plate (3) and one end of cladding in epoxy packaging body (1) are from first pin (4), second pin (5) that stretch out in epoxy packaging body (1), its characterized in that: the first chip substrate (2) comprises a first supporting region (21) and a first lead region (22) perpendicular to one end of the first supporting region (21), the second chip substrate (3) comprises a second supporting region (31) and a second lead region (32), the second supporting region (31) is parallel to the first supporting region (21) at an interval, the second lead region (32) is perpendicular to one end of the second supporting region (31) and is positioned on the outer side of one end, far away from the first lead region (22), of the first supporting region (21), one end, close to the second supporting region (31), of the second lead region (32) is provided with a downward first bending portion (8), so that an upper horizontal portion (91) and a lower horizontal portion (92) are formed on two sides of the first bending portion (8), and the upper surface of the lower horizontal portion (92) positioned on the outer side of the first supporting region (21) is lower than the lower surface of the first supporting region (21) in the vertical direction;

the upper surface interval of first support region (21) is provided with third chip (63), fourth chip (64), it has a through-hole (13) to lie in the region between third chip (63), fourth chip (64) on first support region (21), the junction of second support region (31) and second lead wire district (32) and lie in and have a breach (12) near first portion (8) one side edge of bending, the setting is pressed close to on the horizontal plane in breach (12) and first portion (8) of bending.

2. The semiconductor rectifier bridge of claim 1, wherein: the region that is used for being connected with chip (6) on first chip base plate (2), the second chip base plate (3) separately is provided with a supporting part (11), the area of supporting part (11) is less than the area and every of chip (6) lower surface supporting part (11) are located and correspond chip (6) central zone under.

3. The semiconductor rectifier bridge of claim 1, wherein: the side surface at the edge of the supporting part (11) is a slope surface.

4. The semiconductor rectifier bridge of claim 1, wherein: the notch (12) is a semicircular notch.

5. The semiconductor rectifier bridge of claim 1, wherein: one ends of the first lead area (22) and the second lead area (32) which are far away from the first supporting area (21) and the second supporting area (31) respectively extend outwards from the same side of the epoxy packaging body (1).

6. The semiconductor rectifier bridge of claim 1, wherein: the first lead area (22) and the second lead area (32) are respectively provided with a downward second bending part (10) close to the edge area of the epoxy packaging body (1), so that the first lead area (22) and the second lead area (32) extend out of the lower surface of the area of the epoxy packaging body (1) and are flush with the lower surface of the epoxy packaging body (1).

7. The semiconductor rectifier bridge of claim 1, wherein: the third chip (63) is located at one end of the first support region (21) close to the second lead region (32).

8. The semiconductor rectifier bridge of claim 7, wherein: the third chip (63) is extended outwards to form a first supporting area (21) on one side close to the second lead area (32).