CN213880407U - Substrate for etching process - Google Patents
Substrate for etching process Download PDFInfo
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- CN213880407U CN213880407U CN202023310249.2U CN202023310249U CN213880407U CN 213880407 U CN213880407 U CN 213880407U CN 202023310249 U CN202023310249 U CN 202023310249U CN 213880407 U CN213880407 U CN 213880407U
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- bonding pad
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Abstract
The utility model discloses a base plate for etching process, include: the core plate is provided with air holes penetrating through the front surface and the back surface of the core plate; at least one first pad disposed on a front surface of the core board to form a via; the second bonding pad is provided with a first through hole, the second bonding pad is arranged on the back surface of the core plate, and the first through hole is communicated with the air guide hole; the dry film is provided with a second through hole, the dry film is arranged on the back face of the core plate and covers the second bonding pad, the second through hole is communicated with the first through hole, and the diameter of the second through hole is smaller than that of the first through hole and the air guide hole. The scheme can reduce the etching degree of the first bonding pad, and meanwhile, residual copper in the air guide hole is avoided.
Description
Technical Field
The utility model relates to a PCB technical field, specific be a base plate for etching process.
Background
With the rapid development of electronic technology, the requirements of electronic products on circuit boards are higher and higher. Especially, for the package substrate, the requirements for high precision, high density, and impedance control and line width tolerance of the outer layer circuit of the package substrate are higher and higher, and therefore, the etching effect of the package substrate is also required to have good stability and uniformity.
In the packaging process, in order to improve the smoothness of the flow of the Mold compound, it is generally necessary to design air vents on the package substrate, and the Mold compound can fill the bottom of the package substrate through the air vents to make the package substrate more stable. However, if the aperture of the air vent is smaller than 90 μm and the single surface of the package substrate is provided with copper pads (or pads), the pads near the air vent are etched due to too fast flow rate of the etching solution near the air vent in the etching process, so that residual copper is easily left in the air vent, and the residual copper affects the glue injection function of the air vent of the substrate in the packaging process.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects in the prior art, the embodiments of the present invention provide a substrate for etching process, which is used to solve at least one of the above problems.
The embodiment of the application discloses: a substrate for an etching process, comprising:
the core plate is provided with air holes penetrating through the front surface and the back surface of the core plate;
at least one first pad disposed on a front surface of the core board to form a via;
the second bonding pad is provided with a first through hole, the second bonding pad is arranged on the back surface of the core plate, and the first through hole is communicated with the air guide hole;
the dry film is provided with a second through hole, the dry film is arranged on the back face of the core plate and covers the second bonding pad, the second through hole is communicated with the first through hole, and the diameter of the second through hole is smaller than that of the first through hole and the air guide hole.
Specifically, the first bonding pad and/or the second bonding pad are made of copper.
Specifically, the first through hole and the air guide hole are coaxially arranged.
Specifically, the second through hole and the first through hole are coaxially arranged.
Specifically, the diameter of the first through hole is equal to the diameter of the air guide hole.
Specifically, the diameter of the second through hole is between 28 and 32 microns.
Specifically, the diameter of the air guide hole is less than or equal to 90 μm.
The utility model discloses following beneficial effect has at least:
the back of the core plate of the substrate for the etching process is provided with the second bonding pad with the first through hole, and the first through hole is communicated with the air guide hole in the core plate, so that etching liquid on the front of the core plate can flow into the first through hole through the air guide hole. In addition, because the diameter of the second through hole on the dry film is smaller than that of the first through hole, the outflow speed of the etching liquid in the first through hole is smaller than the inflow speed, that is, the staying time of the etching liquid on the front surface of the core plate is prolonged, so that the replacement speed of the etching liquid on the front surface of the core plate can be reduced, and therefore, the first pad can be further prevented from being over-etched, and the second pad can also be prevented from being over-etched. Because the etching amount of the first bonding pad is reduced, copper slag entering the air guide hole is reduced, and the dry film is provided with a second through hole for the etching liquid to flow out, the copper slag also flows out of the second through hole along with the etching liquid, so that no residual copper slag exists in the air guide hole.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a substrate for an etching process according to an embodiment of the present invention;
fig. 2 is a cross-sectional view a-a of fig. 1.
Reference numerals of the above figures: 1. a core board; 11. an air vent; 2. a first pad; 3. a second pad; 31. a first through hole; 4. drying the film; 41. a second via.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1 and 2, the substrate for an etching process of the present embodiment includes a core board 1, at least one first pad 2, a second pad 3, and a dry film 4, wherein the first pad 2 and the second pad 3 are made of copper. Wherein, the core plate 1 is provided with air holes 11 which run through the front and the back of the core plate 1; the first pads 2 are provided on the front surface of the core board 1 to form conduction portions. The second pads 3 are provided on the back surface of the core plate 1, and the second pads 3 are provided with first through holes 31, the first through holes 31 being communicated with the air guide holes 11 of the core plate 1, so that the etching liquid flowing on the front surface of the core plate 1 can flow from the air guide holes 11 into the first through holes 31. The dry film 4 is arranged on the back surface of the core plate 1 and covers the second bonding pad 3, the dry film 4 is provided with a second through hole 41, the second through hole 41 is communicated with the first through hole 31 on the second bonding pad 3, so that the etching liquid in the first through hole 31 can flow out from the second through hole 41, the diameter of the second through hole 41 is smaller than the diameter of the first through hole 31 and the diameter of the air guide hole 11, the flowing speed of the etching liquid out from the second through hole 41 is smaller than the flowing speed of the etching liquid into the first through hole 31, the staying time of the etching liquid in the air guide hole 11 and the first through hole 31 is prolonged, the replacement speed (flowing speed) of the etching liquid on the front surface of the core plate 1 is reduced, and the etching speed of the first bonding pad 2 by the etching liquid is reduced.
By means of the structure, the back surface of the core plate 1 of the substrate for the etching process of the embodiment is provided with the second bonding pad 3 with the first through hole 31, the first through hole 31 is communicated with the air guide hole 11 on the core plate 1, so that the etching liquid on the front surface of the core plate 1 can flow into the first through hole 31 through the air guide hole 11, and the second bonding pad 3 can replace a part of the first bonding pad 2 to be etched by the etching liquid due to the fact that the etching liquid is arranged in the first through hole 31, therefore, the etched amount of the first bonding pad 2 can be reduced, and the first bonding pad 2 is prevented from being thinned due to over etching. In addition, since the diameter of the second through hole 41 of the dry film 4 is smaller than the diameter of the first through hole 31, the flowing-out speed of the etching solution in the first through hole 31 is smaller than the flowing-in speed, that is, the staying time of the etching solution on the front surface of the core plate 1 is longer, so that the replacement speed of the etching solution on the front surface of the core plate 1 can be reduced, and therefore, the first pad 2 can be further prevented from being over-etched, and the second pad 3 can be prevented from being over-etched. As the etching amount of the first bonding pad 2 is reduced, the copper slag entering the air guide hole 11 is reduced, and the dry film 4 is provided with the second through hole 41 for the etching liquid to flow out, the copper slag also flows out from the second through hole 41 along with the etching liquid, so that the residual copper slag in the air guide hole 11 is avoided.
Specifically, as shown in fig. 2, the first through hole 31 of the second land 3 and the air guide hole 11 of the core board 1 are coaxially arranged. Further, the second through hole 41 on the dry film 4 and the first through hole 31 on the second pad 3 are coaxially disposed. Thus, the copper dross in the gas vent 11 flows out of the second through hole 41 along with the etching solution.
Specifically, the diameter of the first through hole 31 of the present embodiment may be greater than or equal to the diameter of the air-guide hole 11. Preferably, as shown in fig. 2, the diameter of the first through hole 31 is equal to the diameter of the air-guide hole 11.
Specifically, the diameter of the air-guide hole 11 in this embodiment is less than or equal to 90 μm, and the diameter of the second through hole 41 may be between 28 μm and 32 μm, but it should be noted that the diameter of the second through hole 41 is always smaller than the diameter of the air-guide hole 11. The scheme of this embodiment is used for solving the clear problem of remaining copper sediment in the undersize gas guide hole 11, and the effect is very obvious.
The present invention has been explained by using specific embodiments, and the explanation of the above embodiments is only used to help understand the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.
Claims (7)
1. A substrate for use in an etching process, comprising:
the core plate is provided with air holes penetrating through the front surface and the back surface of the core plate;
at least one first pad disposed on a front surface of the core board to form a via;
the second bonding pad is provided with a first through hole, the second bonding pad is arranged on the back surface of the core plate, and the first through hole is communicated with the air guide hole;
the dry film is provided with a second through hole, the dry film is arranged on the back face of the core plate and covers the second bonding pad, the second through hole is communicated with the first through hole, and the diameter of the second through hole is smaller than that of the first through hole and the air guide hole.
2. The substrate for etching process according to claim 1, wherein the first pad and/or the second pad is made of copper.
3. The substrate for etching process according to claim 1, wherein the first through hole and the gas-guide hole are coaxially arranged.
4. The substrate for etching process according to claim 1, wherein the second through hole and the first through hole are coaxially disposed.
5. The substrate for an etching process according to claim 1, wherein a diameter of the first through hole is equal to a diameter of the air-guide hole.
6. The substrate for etching process according to claim 1, wherein the diameter of the second through hole is between 28 and 32 μm.
7. The substrate for etching process according to claim 1, wherein the diameter of the air-guide hole is 90 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023310249.2U CN213880407U (en) | 2020-12-30 | 2020-12-30 | Substrate for etching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023310249.2U CN213880407U (en) | 2020-12-30 | 2020-12-30 | Substrate for etching process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213880407U true CN213880407U (en) | 2021-08-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023310249.2U Active CN213880407U (en) | 2020-12-30 | 2020-12-30 | Substrate for etching process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213880407U (en) |
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2020
- 2020-12-30 CN CN202023310249.2U patent/CN213880407U/en active Active
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