CN2138346Y - Semiconductor thermoelectric cooling assembly - Google Patents
Semiconductor thermoelectric cooling assembly Download PDFInfo
- Publication number
- CN2138346Y CN2138346Y CN92221034.9U CN92221034U CN2138346Y CN 2138346 Y CN2138346 Y CN 2138346Y CN 92221034 U CN92221034 U CN 92221034U CN 2138346 Y CN2138346 Y CN 2138346Y
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- CN
- China
- Prior art keywords
- assembly
- cooling
- utility
- model
- semiconductor thermoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000001816 cooling Methods 0.000 title abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 18
- 238000005057 refrigeration Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 235000012149 noodles Nutrition 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 11
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000007710 freezing Methods 0.000 description 4
- 230000008014 freezing Effects 0.000 description 4
- 238000010622 cold drawing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- Devices That Are Associated With Refrigeration Equipment (AREA)
Abstract
The utility model relates to a semiconductor thermoelectric cooling and heating assembly. The utility model mainly solves the problems that the ceramic basal plate of the existing semiconductor thermoelectric cooling assembly has poor heat conductivity, the hot and the cold basal plates are easy to fall to pieces, the cooling efficiency is low caused by parasitic temperature difference, the existing semiconductor thermoelectric cooling assembly can not be used on medium and small-sized cooling equipment with large cooling capacity, etc. The utility model has the key technology that metal plates with thin oxidation film insulation layers are used as a cold and a hot plates of the cooling assembly, and a diversion bar is photoengraved or printed on the oxidation film insulation layer. The cooling efficiency of the assembly is increased from two times to 20%, the great cooling assembly with micro-miniature area is obtained, and the utility model can be used in medium and small-sized cooling equipment instead of a refrigerator compressor.
Description
The utility model relates to a kind of thermoelectric refrigerating semiconductor, heating component driven.
Present domestic and international existing semiconductor refrigerating assembly, for example, the semiconductor refrigerating assembly of domestic and international important production semiconductor refrigerating assembly plant produced such as Tianjin refrigerator factory, Shaanxi power electronic technology industrial group, Wei County semiconductor device factory, the extraordinary device factory in Harbin and U.S. Marlow company all is to adopt Al
2O
3Ceramic substrate.Its structure as shown in Figure 5.Wherein A is the huyashi-chuuka (cold chinese-style noodles) ceramic wafer, and B is the hot side ceramic wafer, and C is a flow guide bar, and D is lead-in wire, and F is a scolder, and E is the refrigeration pile, and G is the metallized area on the ceramic wafer.
On the hot and cold ceramic panel of this refrigerating assembly, be printed with the conductive paste figure respectively, constitute metallized area (G), flow guide bar in burn-back on the metallized area (C).Between hot side ceramic wafer and the huyashi-chuuka (cold chinese-style noodles) ceramic wafer, be arranged with refrigeration pile array.The heat that the refrigeration pile shifts in this refrigerating assembly will transmit by potsherd, because ceramic heat conductivility own is poor, thereby will produce significant parasitic temperature difference when assembly is worked, sometimes up to more than 8 ℃.The existence of this parasitic temperature makes the freezing capacity of refrigerating assembly will lose the freezing capacity of 20% to 50%(semiconductor refrigerating assembly and the actual temperature difference of its work has confidential relation).Have relatively high expectations for the ceramic wafer surface smoothness and the depth of parallelism owing to refrigerating assembly simultaneously, therefore, make the thickness and the area of substrate be restricted again, in addition because ceramic substrate is broken easily, can not manufacture little and the semiconductor refrigerating assembly that refrigerating capacity is big of area so influenced existing structure, thereby limit the range of application of refrigerating assembly.
The purpose of this utility model is to avoid the deficiency of above-mentioned prior art, provides the little refrigerating capacity of a kind of area big, and the high semiconductor refrigerating assembly of reliability.
Realize that the utility model purpose technical scheme is to adopt the substrate of high heat conductive metal plate as semiconductor refrigerating assembly.Electrolytic oxidation one deck 20～50 on this metal substrate
The high strength oxide layer, on oxide layer, make flow guide bar again.Followingly describe structure of the present utility model in detail with reference to accompanying drawing
Fig. 1 is the utility model weld assembly schematic diagram
Fig. 2 is a substrate junction composition of the present utility model
Fig. 3 is the positive view of the utility model assembly
Fig. 4 is electric pile structure figure of the present utility model
Fig. 5 is the positive view of prior art
Among Fig. 1, (1) is cold drawing, and (2) are hot plate, and (3) are the pile array.As substrate (4) structure of cold drawing (1) and hot plate (2), as shown in Figure 2.The material of substrate (4) is metallic plate aluminium, copper or other metal, the high-intensity oxidation insulating layer of one deck (5) is all arranged inside and outside the substrate, wherein the top sticker of substrate internal oxidation layer (5) has layer of metal paper tinsel (6), oxide layer or metal forming glazing are carved with flow guide bar array (7), and the outside of flow guide bar (7) scribbles one deck scolder (8).Pile array (2) relies on mould to arrange by its P type graded alternate with the N type by a plurality of piles (10) and forms.The structure of pile (10) as shown in Figure 4.The physical dimension of this pile is determined by concrete instructions for use design, prior well cutting.Be coated with one deck scolder (9) at least on two solders side of each pile respectively.(11) shown in Figure 3 are the outer lead welding endss that inserts direct current, the welding of whole assembly is to utilize the special composite die of a cover, at twice the whole stack array intactly is welded on successively between high heat conductive metal cold drawing (1) and the high heat conductive metal hot plate (2) and finishes, its welding temperature is controlled between 200 ℃ to 300 ℃.
The utility model is owing to adopt the metal substrate of integrated band thin oxide film insulating barrier, vertical thermal resistance of this metal substrate thin oxide film is minimum, therefore, semiconductor refrigerating assembly can not produce the parasitic temperature difference when work, like this, not only solved the high thermal conductance of substrate but also guaranteed electric insulation, made the freezing capacity of assembly improve 1 times to 20%; Simultaneously because the utility model uses the support of complete metal substrate as assembly, not only eliminated the parasitic temperature difference of semiconductor refrigerating assembly, increased the force intensity that is subjected to of hot and cold substrate, be difficult for broken, and avoided the component failure that causes because of the potsherd substrate crushing, realize the high big refrigerating assembly of microminiature area reliability, enlarged semiconductor refrigerating assembly under equal freezing capacity, the temperature difference of the actual refrigeration work of assembly.Be a kind of desirable refrigerator, the refrigerating assembly of air conditioner and other little medium-sized chilling unit.
Claims (1)
1, a kind of thermoelectric refrigerating semiconductor component, include huyashi-chuuka (cold chinese-style noodles) plate (1), hot side plate (2), refrigeration pile array (3), flow guide bar (7) and lead-in wire (11) is characterized in that hot and cold panel all adopts metal substrate (4), there is the high-intensity oxide layer insulating barrier of one deck (5) the interior outside of metal substrate (4), layer of metal paper tinsel (6) is posted in the gluing of inner face oxide layer, the flow guide bar (7) that photoetching corrosion forms on the metal forming, or the printing flow guide bar (7) of high temperature reduction is arranged on the oxide layer insulating barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN92221034.9U CN2138346Y (en) | 1992-09-25 | 1992-09-25 | Semiconductor thermoelectric cooling assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN92221034.9U CN2138346Y (en) | 1992-09-25 | 1992-09-25 | Semiconductor thermoelectric cooling assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2138346Y true CN2138346Y (en) | 1993-07-14 |
Family
ID=33767929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN92221034.9U Expired - Fee Related CN2138346Y (en) | 1992-09-25 | 1992-09-25 | Semiconductor thermoelectric cooling assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2138346Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682074A (en) * | 2013-12-27 | 2014-03-26 | 江苏天楹环保科技有限公司 | High-thermal-conductivity metallic circuit semiconductor refrigeration piece and processing method thereof |
-
1992
- 1992-09-25 CN CN92221034.9U patent/CN2138346Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682074A (en) * | 2013-12-27 | 2014-03-26 | 江苏天楹环保科技有限公司 | High-thermal-conductivity metallic circuit semiconductor refrigeration piece and processing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |