CN101136449A - High-power semiconductor thermoelectric chip component - Google Patents
High-power semiconductor thermoelectric chip component Download PDFInfo
- Publication number
- CN101136449A CN101136449A CNA2006100321436A CN200610032143A CN101136449A CN 101136449 A CN101136449 A CN 101136449A CN A2006100321436 A CNA2006100321436 A CN A2006100321436A CN 200610032143 A CN200610032143 A CN 200610032143A CN 101136449 A CN101136449 A CN 101136449A
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- Prior art keywords
- semiconductor thermoelectric
- type semiconductor
- thermoelectric element
- chip component
- fritter
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 239000011810 insulating material Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004604 Blowing Agent Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
This invention relates to a large power semiconductor thermoelectric chip component composed of a middle layer base board, semiconductor thermoelectric elements and up and down bafflers, in which, the middle-layer base board is a molding plate of insulating material or a cast plate of insulating material, and multiple through holes in the same size with the elements are set on the middle-layer base board and installed with a P-semiconductor thermoelectric element and an N-semiconductor thermoelectric element in it, the bafflers are bond with the middle-layer base board and connected with the semiconductor elements and the bafflers are processed to several small blocks mutually insulated to constitute parallel, serial or parallel-serial combination of the elements.
Description
Technical field:
The present invention relates to Semiconductor Physics cooling and heating type technical field, be specifically related to a kind of high-power semiconductor thermoelectric chip component.
Background technology:
Semiconductor thermoelectric chip component becomes the new Cooling and Heat Source of people's primary study exploitation with its environmental protection, pollution-free, noiseless, the motion of nothing machinery, remarkable advantage such as volume is little, easy to install, the watt level variable quantity big, control is convenient.
Conventional semiconductor thermoelectric chip component its principle is from the material with thermoelectric energy transfer characteristic, refrigerating function is arranged when passing to direct current, so claim thermoelectric cooling, claim thermoelectric (al) cooling again, owing to the semi-conducting material that with Bi, Te etc. is representative has stronger thermoelectric energy transfer characteristic, just make the real practicability of thermoelectric cooling.In the time of in last century, semi-conducting material is in each technical field extensive use, and the efficient of its thermoelectric effect also improves, and has entered field of engineering technology thereby thermoelectric cooling pyrogenicity is used.But generally speaking, its power consumption is big, and refrigerating capacity is low, and cost price costliness, the efficient not shortcoming of high these essence still exist, thereby can only be applied in some special industry and fields, as space flight facility etc.Therefore further reducing cost of material, break through the traditional handicraft manufacture method, improve cooling and heating type efficient, is the key point that is applied in commerce, the civilian and human daily life.
Thermoelectric chip component is arranged alternately by a plurality of P type semiconductor elements and N type semiconductor element at present, the flow deflector of connecting between P type semiconductor element and the N type semiconductor element, in the P of this numerous series connection, the N type semiconductor element, if any semiconductor element and flow deflector loose contact or semiconductor element damage, will cause the entire chip assembly can't operate as normal or inefficacy, for high-power thermoelectric chip component, its consequence is even more serious especially; Because semiconductor element and flow deflector volume are small, be difficult in the operation accurately put in place again, the manufacture craft difficulty is big, the production cost height.Also also have a kind of thermoelectric chip component at present, replace ceramic wafer with dielectric copper flow deflector, and between flow deflector the potting resin blowing agent, this structure greatly reduces the thermoelectric chip component structural strength, the product percent of pass of making is low.
Summary of the invention:
Technical problem to be solved by this invention is: solve the problem that above-mentioned prior art exists, and provide a kind of high-power semiconductor thermoelectric chip component, both made wherein certain or certain several P, the N type semiconductor element breaks down or damage, can not influence the thermoelectric chip component overall performance yet, and greatly optimized technology, simplified operation, the structural strength height, production cost is low, is suitable for industrialized mass.
The technical solution used in the present invention is: this high-power semiconductor thermoelectric chip component is by middle laminar substrate, the semiconductor heat electric device, baffle upper plate, chin spoiler is formed, in to lead substrate be insulating material profiled sheeting or insulating material casting plate, have a plurality of perforation that match with thermoelectric element on the middle laminar substrate, be separately installed with P type semiconductor thermoelectric element and N type semiconductor thermoelectric element in the perforation, on, chin spoiler and middle laminar substrate and semiconductor heat electric device are connected and fixed, and baffle upper plate is electrically connected with semiconductor heat electric device upper end, chin spoiler is electrically connected with semiconductor heat electric device lower end, on, chin spoiler is processed into the water conservancy diversion fritter of some mutual insulatings, on some mutual insulatings, following water conservancy diversion fritter and P type semiconductor thermoelectric element, N type semiconductor thermoelectric element be electrically connected to form the in parallel of semiconductor heat electric device or series connection or string, combination in parallel.
In the technique scheme, the upper and lower water conservancy diversion fritter of some mutual insulatings and being combined as of thermoelectric chip: one group of P type semiconductor thermoelectric chip upper end is gone up the water conservancy diversion fritter with one group of adjacent N type semiconductor thermoelectric chip upper end by one and is connected in parallel, and this group N type semiconductor thermoelectric chip lower end and adjacent other one group of P type semiconductor thermoelectric chip lower end are connected in parallel by a following water conservancy diversion fritter, so analogize, form many group P type semiconductor thermoelectric chips and many group N type semiconductor thermoelectric chips also, tandem compound.
In the technique scheme, the water conservancy diversion fritter that upper and lower baffler is processed into some mutual insulatings can adopt the processing method of printed circuit board (PCB) to process.
In the technique scheme, middle laminar substrate adopts epoxy resin board, fiber, paper offset plate, blowing agent dielectric panel or other dielectric panel to make.
In the technique scheme, upper and lower baffler is aluminium plate or copper clad plate.
In the technique scheme, upper and lower baffler and P, N type semiconductor thermoelectric chip soldered.
Advantage of the present invention and effect:
1, the present invention has changed traditional thermoelectric components structure and manufacturing process, the perforation that laminar substrate has in the employing, stationary heat electric device, upper and lower then baffler and base plate bonding, with the thermoelectric element soldered, thermoelectric element is installed easily, and is easy to operate, the location accurately, greatly optimize processing technology thereof, effectively improved product percent of pass, improved the utilance of P, N type semiconductor precious metal material, reduced production cost, heat transfer efficiency also has breakthrough progress.The invention solves that the prior art thermoelectric element is difficult to install and fix, flow deflector is difficult to accurate location, big, the inefficient problem of processing technology thereof difficulty.Manufacture craft of the present invention is simple, and the production efficiency height is suitable for industrialized mass.
2, novel structure of the present invention adopts many group P, N type semiconductor thermoelectric element parallel-connection structures, has thoroughly solved in the series connection of prior art thermoelectric element arbitrary thermoelectric element trouble or failure and the problem that causes whole thermoelectric components to lose efficacy.The present invention is whole reliable at energising thermoelectric chip component in service, has exempted maintenance, has guaranteed that cooling and heating type normally moves, and has improved electric property and security appliance index.
3, the present invention can adjust according to assembly input power, cold and hot end area needs, and the single area maximum of processing than traditional handicraft can expand to more than 20 times, has therefore improved efficient, has increased output, has saved manpower and materials.
4, thermoelectric components of the present invention changes series connection for structure in parallel makes the increase of single component power, makes the manufacturing of high-power thermoelectric chip component become possibility, and simultaneously, parallel-connection structure of the present invention has reduced the connection lead, has improved reliability.
5, the present invention changes traditional baffler into aluminium by copper material, greatly reduces cost, and the aluminium cost only is about 1/10th of a copper material cost.
Description of drawings:
Fig. 1 is a floor map of the present invention
Fig. 2 is the A-A generalized section of Fig. 1
Fig. 3 is middle laminar substrate schematic perspective view
Fig. 4 is P, N type semiconductor thermoelectric element schematic perspective view
Embodiment:
Referring to Fig. 1～Fig. 4, this high-power semiconductor thermoelectric chip component is by middle laminar substrate 1, semiconductor heat electric device 2, baffle upper plate 3, chin spoiler 4 is formed, be processed with a plurality of perforation 5 that match with the thermoelectric element size on the middle laminar substrate 1, be separately installed with P type semiconductor thermoelectric element 6 and N type semiconductor thermoelectric element 7 in the perforation 5, baffle upper plate 3, chin spoiler 4 and fixing or hot-forming being connected and fixed of middle laminar substrate 1 gummed, and baffle upper plate 3 is realized being electrically connected with semiconductor heat electric device 2 upper end soldered, chin spoiler 4 is realized being electrically connected with semiconductor heat electric device 2 lower end soldered, then, on, chin spoiler 2, the mode of 3 employing flutings or cutting or printed circuit board (PCB) corrosion is processed into the plurality of small blocks of some mutual insulatings, on these mutual insulatings, following water conservancy diversion fritter and P type semiconductor thermoelectric element, N type semiconductor thermoelectric element be electrically connected to form the in parallel of semiconductor heat electric device or series connection or string, combination in parallel.As shown in Figure 1 and Figure 2, one group of P type semiconductor thermoelectric element 6 upper end and adjacent one group of N type semiconductor thermoelectric element 7 upper end are gone up water conservancy diversion fritter 3 by one and are electrically connected and are connected in parallel, and N type semiconductor thermoelectric element 7 lower ends of this group are electrically connected by a following water conservancy diversion fritter 4 with adjacent other one group of P type semiconductor thermoelectric element 8 lower end and are connected in parallel, as analogize, form many group P type semiconductor thermoelectric elements and many group N type semiconductor thermoelectric elements also, tandem compound.That is: taking one group of parallel way is a plurality of P types or the parallel connection of N type thermoelectric element, again with another the group parallel way be that a plurality of N types or P type thermoelectric element are in parallel, these two groups of parallel waies are series connection mutually again, and another that has so just formed one group of P type in parallel or N type thermoelectric element and parallel connection organizes N type or P type thermoelectric element is connected to reach the bridge mode.
Claims (6)
1. high-power semiconductor thermoelectric chip component, it is characterized in that by middle laminar substrate, the semiconductor heat electric device, baffle upper plate, chin spoiler is formed, middle laminar substrate is insulating material profiled sheeting or insulating material casting plate, have a plurality of perforation that match with thermoelectric element on the middle laminar substrate, be separately installed with P type semiconductor thermoelectric element and N type semiconductor thermoelectric element in the perforation, on, chin spoiler and middle laminar substrate and semiconductor heat electric device are connected and fixed, and baffle upper plate is electrically connected with semiconductor heat electric device upper end, chin spoiler is electrically connected with semiconductor heat electric device lower end, on, chin spoiler is processed into the water conservancy diversion fritter of some mutual insulatings, on some mutual insulatings, following water conservancy diversion fritter and P type semiconductor thermoelectric element, N type semiconductor thermoelectric element be electrically connected to form the in parallel of semiconductor heat electric device or series connection or string, combination in parallel.
2. according to the high-power semiconductor thermoelectric chip component of claim 1, it is characterized in that described some mutual insulatings on, being combined as of following water conservancy diversion fritter and thermoelectric element: one group of P type semiconductor thermoelectric element upper end is gone up the water conservancy diversion fritter with one group of adjacent N type semiconductor thermoelectric element upper end by one and is connected in parallel, and this group N type semiconductor thermoelectric element lower end and adjacent other one group of P type semiconductor thermoelectric element lower end are connected in parallel by a following water conservancy diversion fritter, so analogize, form many group P type semiconductor thermoelectric elements and many group N type semiconductor thermoelectric elements also, tandem compound.
3. according to the high-power semiconductor thermoelectric chip component of claim 1, it is characterized in that the water conservancy diversion fritter that described upper and lower baffler is processed into some mutual insulatings adopts the processing method of printed circuit board (PCB) to process.
4. according to the high-power semiconductor thermoelectric chip component of claim 1, laminar substrate adopts epoxy resin board, fiber, paper offset plate or blowing agent dielectric panel to make in it is characterized in that.
5. according to the high-power semiconductor thermoelectric chip component of claim 1, it is characterized in that upper and lower baffler is aluminium plate or copper clad plate.
6. according to the high-power semiconductor thermoelectric chip component of claim 1, it is characterized in that upper and lower baffler and P, N type semiconductor thermoelectric element soldered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100321436A CN101136449A (en) | 2006-08-28 | 2006-08-28 | High-power semiconductor thermoelectric chip component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100321436A CN101136449A (en) | 2006-08-28 | 2006-08-28 | High-power semiconductor thermoelectric chip component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101136449A true CN101136449A (en) | 2008-03-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100321436A Pending CN101136449A (en) | 2006-08-28 | 2006-08-28 | High-power semiconductor thermoelectric chip component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101136449A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106881512A (en) * | 2017-04-17 | 2017-06-23 | 如皋市大昌电子有限公司 | A kind of bulk quantity of chips welds detent mechanism |
| CN107615501A (en) * | 2015-06-02 | 2018-01-19 | 松下知识产权经营株式会社 | TRT and electrothermal module |
| CN113659065A (en) * | 2021-07-14 | 2021-11-16 | 杭州大和热磁电子有限公司 | Semiconductor module with double stress release and manufacturing method thereof |
| CN112038478B (en) * | 2020-09-15 | 2023-09-26 | 上海商皓电子科技有限公司 | Manufacturing process of semiconductor refrigeration element and element |
-
2006
- 2006-08-28 CN CNA2006100321436A patent/CN101136449A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107615501A (en) * | 2015-06-02 | 2018-01-19 | 松下知识产权经营株式会社 | TRT and electrothermal module |
| CN106881512A (en) * | 2017-04-17 | 2017-06-23 | 如皋市大昌电子有限公司 | A kind of bulk quantity of chips welds detent mechanism |
| CN112038478B (en) * | 2020-09-15 | 2023-09-26 | 上海商皓电子科技有限公司 | Manufacturing process of semiconductor refrigeration element and element |
| CN113659065A (en) * | 2021-07-14 | 2021-11-16 | 杭州大和热磁电子有限公司 | Semiconductor module with double stress release and manufacturing method thereof |
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| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20080305 |