CN201708146U - Radiator and semiconductor module with the same - Google Patents

Radiator and semiconductor module with the same Download PDF

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Publication number
CN201708146U
CN201708146U CN2010202122195U CN201020212219U CN201708146U CN 201708146 U CN201708146 U CN 201708146U CN 2010202122195 U CN2010202122195 U CN 2010202122195U CN 201020212219 U CN201020212219 U CN 201020212219U CN 201708146 U CN201708146 U CN 201708146U
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CN
China
Prior art keywords
heat
metal plate
metal sheet
radiator
groove
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Expired - Lifetime
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CN2010202122195U
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Chinese (zh)
Inventor
罗淑斌
张杰夫
冯卫
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BYD Co Ltd
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BYD Co Ltd
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Priority to CN2010202122195U priority Critical patent/CN201708146U/en
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Abstract

The utility model provides a radiator, belongs to the field of the radiating of the semiconductor, and comprises a ceramic substrate with a front surface and a back surface, a front-surface metal plate combined with the front surface, a back-surface metal plate combined with the back surface, and a radiator with a radiating metal plate, wherein the radiating metal plate is combined with the back-surface metal plate, the back-surface metal plate is provided with a stress absorbing space, a plurality of column-shaped bugles are arranged between the back-surface metal plate and the radiating metal plate, and the column-shaped bugles and the radiating metal plate are integrated formed. The utility model also provides a semiconductor module which is used for arranging a semiconductor element on the radiator so as to solve the technical problem of laminated welding layer caused by hot stress.

Description

A kind of heat abstractor and have the semiconductor module of this heat abstractor
Technical field
The utility model belongs to the semiconductor heat-dissipating field, relates in particular to a kind of heat abstractor and has the semiconductor module of this heat abstractor.
Background technology
High-power applications fields such as the industrial drives device of hybrid vehicle, wind power generation, solar power generation and standard are to the proposition higher requirement such as reliability, thermal diffusivity and electric firm performance of semiconductor element.
Be illustrated in figure 1 as existing semiconductor module, comprise: semiconductor element 11, substrate 12, weld layer 13, base plate 14, heat-conducting silicone grease layer 15, water-filled radiator 16 with heat abstractor.Semiconductor element 11 carries on substrate 12, and substrate 12 is welded on the base plate 14 by weld layer 13, and base plate 14 is connected on the water-filled radiator 16 by heat-conducting silicone grease layer 15.Described substrate 12 is DBA (ceramic covering aluminum plate) substrate or DBC (ceramic copper-clad plate) substrate, and described base plate 14 is copper soleplate or AlSiC (aluminium silicon carbide) base plate.Semiconductor element 11 carries out the heat that switch work produced and carries out heat exchange by substrate 12, weld layer 13, base plate 14, heat-conducting silicone grease layer 15, cooling circulating water last and water-filled radiator 16 successively.Because the thermal conductivity of heat-conducting silicone grease is very little, is generally 3~8W/m.k, greatly influenced the heat exchanger effectiveness of semiconductor element 11 with water-filled radiator 16.
When base plate 14 is copper soleplate, weld layer 13 between copper soleplate and the substrate 12 adopts slicken solder, the fusing point of this slicken solder is less than 450 ℃, when connecting by vacuum welding, CTE (thermal coefficient of expansion) thermal mismatching of copper soleplate 14 and substrate 12, slicken solder is easy to generate thermal fatigue after through a hundreds of thermal cycle, large-area lamination will appear in weld layer, cause the thermal resistance of semiconductor element 11 to increase, influence the work of semiconductor element 11, thereby cause module to lose efficacy.
When base plate 14 is the AlSiC base plate, though the CTE of AlSiC base plate and substrate 12 can reach good heat coupling, avoided producing big thermal stress, improved the reliability of module, the AlSiC material price is than higher, thereby increased the cost of module.
The utility model content
The utility model provides a kind of heat abstractor of relief of thermal stress for solving existing high-power semiconductor module because thermal stress causes the technical problem of weld layer layering.
A kind of heat abstractor comprises:
Insulated substrate with front surface and back of the body surface;
Be incorporated into the front metal plate of described front surface;
Be incorporated into the back metal plate on described back of the body surface;
And being provided with the radiator of heat-dissipating metal sheet, described heat-dissipating metal sheet is incorporated into described back metal plate;
Described back metal plate is provided with the stress absorption space;
Be provided with a plurality of columnar projections between described back metal plate and the heat-dissipating metal sheet, described columnar projections and heat-dissipating metal sheet are one-body molded.
Further preferred, columnar projections is that cylinder, square or cross section are polygonal cylinder on the described heat-dissipating metal sheet.
Further preferred, column height of projection span is 0.5~1.5 millimeter on the described heat-dissipating metal sheet, and the span of columnar projections area of section is 0.8~7.1 square millimeter, and the spacing span between the columnar projections is 1.0~2.5 millimeters.
Further preferred, described stress absorption space is hole or the groove that forms on the described back metal plate.
Further preferred, described insulated substrate is a ceramic wafer.
Further preferred, described radiator is provided with and the corresponding cell body of described heat-dissipating metal sheet size, and heat-dissipating metal sheet is positioned at the cell body of radiator.
Further preferred, the part that described cell body edge contacts with heat-dissipating metal sheet is provided with first groove, second groove; Be provided with first sealing ring in described first groove, be provided with second sealing ring in second groove.
Further preferred, described radiator cell body edge is provided with first screw hole, described first screw hole is between first groove and second groove, described heat radiating metal panel edges be provided with radiator on corresponding second screw hole of first screw hole, first screw hole is connected by screw with second screw hole.
In addition, the utility model also provides a kind of semiconductor module with heat abstractor.
Described semiconductor module comprises heat abstractor and the semiconductor element of lift-launch on heat abstractor front metal plate.
The utility model is provided with hole or groove and at heat-dissipating metal sheet and the back metal face that closes that hardens columnar projections is set on the back metal plate of heat abstractor, the surface that hole or groove are not set on the back metal plate combines with insulated substrate, the surface that hole or groove are set combines with heat-dissipating metal sheet, the heat conductivility excellence of insulated substrate and radiator.Improved the heat dispersion that carries the heat that sends in front metal plate semiconductor elements.Even not coexisting, the thermal coefficient of expansion of insulated substrate and heat-dissipating metal sheet do not produce in the heat abstractor under the situation of thermal stress, columnar projections on hole on the back metal plate or groove and the heat-dissipating metal sheet deforms, thermal stress is relaxed, prevent the technical problem of insulated substrate and heat-dissipating metal sheet generation layering.
Description of drawings
Fig. 1 is the semiconductor module schematic diagram with heat abstractor that prior art provides;
Fig. 2 is the construction for heat radiating device schematic diagram that the utility model provides;
Fig. 3 is a cylindrical bump vertical view on the heat-dissipating metal sheet that provides of the utility model;
Fig. 4 is a punching schematic diagram on the back metal plate that provides of the utility model;
Fig. 5 is the radiator groove body structure schematic diagram that the utility model provides;
Fig. 6 is the semiconductor module schematic diagram with heat abstractor that the utility model provides.
Embodiment
Clearer for technical problem, technical scheme and beneficial effect that the utility model is solved, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
In order to improve the heat exchanger effectiveness of semiconductor element and radiator, reduce the thermal resistance of semiconductor element, improve the power density of semiconductor element, prevent because the semiconductor module lamination that thermal stress causes, proposed a kind of heat abstractor and had the semiconductor module of this heat abstractor.
As shown in Figure 2, be the construction for heat radiating device schematic diagram, comprise: insulated substrate 21, front metal plate 22, back metal plate 23, heat-dissipating metal sheet 24, radiator 25.
Insulated substrate 21 has front surface and back of the body surface, front metal plate 22 is incorporated into the front surface of described insulated substrate 21, back metal plate 23 is incorporated into the back of the body surface of described insulated substrate 21, and radiator 25 is provided with heat-dissipating metal sheet 24, and described heat-dissipating metal sheet 25 is incorporated into described back metal plate 23.
Described back metal plate 23 is provided with the stress absorption space; Be provided with a plurality of columnar projections between described back metal plate 23 and the heat-dissipating metal sheet 24, described columnar projections and heat-dissipating metal sheet 24 are one-body molded.
24 of described back metal plate 23 and heat-dissipating metal sheets are selected brazing metal vacuum brazing for use, and brazing metal is the aluminium base brazing metal of fusing point greater than 450 ℃ aluminium silicon braze or aluminium silicon magnesium braze.Have high temperature reliability, higher mechanical properties, higher thermal fatigue resistance.
Further preferred, columnar projections is a cylinder on the heat-dissipating metal sheet 24 as described in Figure 3, and also can be square or cross section is polygonal cylinder.
Column height of projection span is 0.5~1.5 millimeter on the described heat-dissipating metal sheet 24, and the span of columnar projections area of section is 0.8~7.1 square millimeter, and the spacing span between the columnar projections is 1.0~2.5 millimeters.Further preferred, in conjunction with the area of hole on the back metal plate or groove, the columnar projections height is got 1 millimeter, and the columnar projections area of section is 3.1 square millimeters, and the spacing between the columnar projections is got 1 millimeter.The reason of getting these numerical value is: if the height of columnar projections is spent low, and the cross-sectional diameter of projection is excessive, then because under the situation of the different generation of the thermal coefficient of expansion of insulated substrate and heat-dissipating metal sheet thermal stress, the distortion deficiency of columnar projections on the heat-dissipating metal sheet, the distortion of columnar projections is not enough to relax thermal stress.If projection is too high, the cross-sectional diameter of projection is little, and then heat conductivility descends, and heat dispersion is reduced.
Heat-dissipating metal sheet 24 is provided with columnar projections with the face that back metal plate 23 combines, and can alleviate thermal stress between heat-dissipating metal sheet 24 and the back metal plate 23 by deformation.Make heat-dissipating metal sheet and back metal plate when vacuum brazing, can not cause buckling deformation because of the CTE mismatch between the material.
Also there is columnar projections at the back side of heat-dissipating metal sheet 24, back side columnar projections has reduced the current area of cooling circulating water, make the back side projection of recirculated water and heat-dissipating metal sheet and the face that does not have a projection fully contact, this will improve the heat exchanger effectiveness of heat-dissipating metal sheet and cooling circulating water.Back side columnar projections can be polygonal cylinder for cylinder, zigzag, square or cross section.
Further preferred, described stress absorption space is hole or the groove that forms on the described back metal plate 23.As shown in Figure 4, the hole that forms on the back metal plate.The punching symmetry be formed on the back metal plate around, the shape in hole is not limited to circle, triangle, quadrangle, other polygon meet the requirements equally.
Further preferred, described insulated substrate 21 is a ceramic wafer, and front metal plate 22, back metal plate 23, heat-dissipating metal sheet 24 are aluminium sheet.
Further preferred, as shown in Figure 5, described radiator is provided with and the corresponding cell body 51 of described heat-dissipating metal sheet size, and heat-dissipating metal sheet is positioned at the cell body of radiator.Be provided with first groove 52, second groove 53 in described cell body 51 edges and the part that heat-dissipating metal sheet contacts.Be provided with first sealing ring in described first groove 52, be provided with second sealing ring in second groove 53.Water in first sealing ring, the dual prevention radiator of second sealing ring is penetrated into heat-dissipating metal sheet top.Further, coat waterproof gasket cement between two sealing rings, heat-dissipating metal sheet is installed on the radiator, guarantees the whole air-tightness of module, more can effectively prevent the infiltration of sealing.
Described first sealing ring, the second sealing ring ability anti-icing fluid burn into and excellent ageing resistace is arranged.
Further preferred, described radiator cell body edge is provided with first screw hole 27, described first screw hole 27 is between first groove and second groove, described heat-dissipating metal sheet 24 edges be provided with radiator on corresponding second screw hole of first screw hole 26, the first screw holes 27 be connected by screw with second screw hole 26.Heat-dissipating metal sheet is connected with screw with radiator, is convenient to dismounting.
In addition, the utility model also provides a kind of semiconductor module with heat abstractor.As shown in Figure 6,
Described semiconductor module comprises heat abstractor 62 and the semiconductor element 61 of lift-launch on heat abstractor front metal plate.
Front metal plate and back metal plate on the heat abstractor 62 all pass through Nickel Plating Treatment, are convenient to semiconductor element 61, and the welding of heat-dissipating metal sheet.
This semiconductor module is at first finished the same insulated substrate of front metal plate, back metal plate, the heat-dissipating metal sheet welding of semiconductor element mounted thereon, then heat-dissipating metal sheet is connected with radiator by screw.Subsequent handling causes semiconductor element to damage, and can directly it be unloaded from radiator.The problem that can cause the overall semiconductor module to scrap does not improve the assembling yield.
The utility model is provided with hole or groove and at heat-dissipating metal sheet and the back metal face that closes that hardens columnar projections is set on the back metal plate of heat abstractor, the surface that hole or groove are not set on the back metal plate combines with insulated substrate, the surface that hole or groove are set combines with heat-dissipating metal sheet, the heat conductivility excellence of insulated substrate and radiator.Improved the heat dispersion that carries the heat that sends in front metal plate semiconductor elements.Even not coexisting, the thermal coefficient of expansion of insulated substrate and heat-dissipating metal sheet do not produce in the heat abstractor under the situation of thermal stress, columnar projections on hole on the back metal plate or groove and the heat-dissipating metal sheet deforms, thermal stress is relaxed, prevent the technical problem of insulated substrate and heat-dissipating metal sheet generation layering.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.

Claims (9)

1. heat abstractor comprises:
Insulated substrate with front surface and back of the body surface;
Be incorporated into the front metal plate of described front surface;
Be incorporated into the back metal plate on described back of the body surface;
And being provided with the radiator of heat-dissipating metal sheet, described heat-dissipating metal sheet is incorporated into described back metal plate; It is characterized in that:
Described back metal plate is provided with the stress absorption space;
Be provided with a plurality of columnar projections between described back metal plate and the heat-dissipating metal sheet, described columnar projections and heat-dissipating metal sheet are one-body molded.
2. heat abstractor as claimed in claim 1 is characterized in that: columnar projections is that cylinder, square or cross section are polygonal cylinder on the described heat-dissipating metal sheet.
3. heat abstractor as claimed in claim 1, it is characterized in that: column height of projection span is 0.5~1.5 millimeter on the described heat-dissipating metal sheet, the span of columnar projections area of section is 0.8~7.1 square millimeter, and the spacing span between the columnar projections is 1~2.5 millimeter.
4. heat abstractor as claimed in claim 1 is characterized in that: described stress absorption space is hole or the groove that forms on the described back metal plate.
5. heat abstractor as claimed in claim 1 is characterized in that: described insulated substrate is a ceramic wafer.
6. heat abstractor as claimed in claim 1 is characterized in that: described radiator is provided with and the corresponding cell body of described heat-dissipating metal sheet size, and heat-dissipating metal sheet is positioned at the cell body of radiator.
7. heat abstractor as claimed in claim 6 is characterized in that: the part that described cell body edge contacts with heat-dissipating metal sheet is provided with first groove, second groove; Be provided with first sealing ring in described first groove, be provided with second sealing ring in second groove.
8. heat abstractor as claimed in claim 7 is characterized in that: described radiator cell body edge is provided with first screw hole, and described first screw hole is between first groove and second groove; Described heat radiating metal panel edges be provided with radiator on corresponding second screw hole of first screw hole, first screw hole is connected by screw with second screw hole.
9. the semiconductor module with heat abstractor is characterized in that: have any one described heat abstractor and the semiconductor element of lift-launch on heat abstractor front metal plate in the claim 1~8.
CN2010202122195U 2010-05-26 2010-05-26 Radiator and semiconductor module with the same Expired - Lifetime CN201708146U (en)

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Application Number Priority Date Filing Date Title
CN2010202122195U CN201708146U (en) 2010-05-26 2010-05-26 Radiator and semiconductor module with the same

Publications (1)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104486901A (en) * 2014-11-19 2015-04-01 株洲南车时代电气股份有限公司 Heat-radiating insulating lining board, packaging module comprising lining board and manufacturing method thereof
CN105870080A (en) * 2015-02-09 2016-08-17 株式会社吉帝伟士 Semiconductor device
CN106488690A (en) * 2016-11-16 2017-03-08 国电南瑞科技股份有限公司 A kind of water-filled radiator of low EMI
CN107078111A (en) * 2014-07-10 2017-08-18 大陆汽车有限公司 Cooling device, the method for processing cooling device and power circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078111A (en) * 2014-07-10 2017-08-18 大陆汽车有限公司 Cooling device, the method for processing cooling device and power circuit
CN104486901A (en) * 2014-11-19 2015-04-01 株洲南车时代电气股份有限公司 Heat-radiating insulating lining board, packaging module comprising lining board and manufacturing method thereof
CN104486901B (en) * 2014-11-19 2016-03-23 株洲南车时代电气股份有限公司 Radiating insulating liner plate, package module comprising this liner plate and preparation method thereof
CN105870080A (en) * 2015-02-09 2016-08-17 株式会社吉帝伟士 Semiconductor device
CN105870080B (en) * 2015-02-09 2020-05-19 株式会社吉帝伟士 Semiconductor device with a plurality of semiconductor chips
US11488886B2 (en) 2015-02-09 2022-11-01 Amkor Technology Japan, Inc. Semiconductor device
CN106488690A (en) * 2016-11-16 2017-03-08 国电南瑞科技股份有限公司 A kind of water-filled radiator of low EMI

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: Shenzhen BYD Microelectronics Co., Ltd.

Assignor: Biyadi Co., Ltd.

Contract record no.: 2011440020324

Denomination of utility model: Radiator and semiconductor module with the same

Granted publication date: 20110112

License type: Exclusive License

Record date: 20110901

CX01 Expiry of patent term

Granted publication date: 20110112

CX01 Expiry of patent term