CN213070608U - Buzzer driving circuit with temperature detection function - Google Patents
Buzzer driving circuit with temperature detection function Download PDFInfo
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- CN213070608U CN213070608U CN202020109528.3U CN202020109528U CN213070608U CN 213070608 U CN213070608 U CN 213070608U CN 202020109528 U CN202020109528 U CN 202020109528U CN 213070608 U CN213070608 U CN 213070608U
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Abstract
The utility model provides a take buzzer drive circuit of temperature detection, including the current-limiting device, diode D1, the amplifier, frequency generation circuit, gate control circuit, the drive NMOS pipe, V2, Y, F, G is the signal line, V1 is the reference voltage signal line, current-limiting device one end connecting power cord, another termination V2, diode D1 positive pole connects V2, diode D1 negative pole earth connection, amplifier negative input termination V2, positive input termination V1, output termination Y, frequency generation circuit output connects F, input termination F of gate control circuit, another input termination Y, output connects G, drive NMOS pipe grid connects G, the drain electrode connects output OUT, the source earth connection, the substrate earth connection. When the temperature of the chip is too high, the NMOS tube is turned off to reduce power consumption, and the circuit has the advantages of high reliability and low cost.
Description
Technical Field
The utility model relates to a buzzer circuit field, concretely relates to buzzer drive circuit.
Background
As shown in fig. 6, the conventional buzzer circuit is composed of a frequency generation circuit and a driving tube, and when the temperature of the chip is too high, the circuit has the disadvantages that the power consumption is not reduced, the chip is damaged or the buzzer or even the whole system is damaged.
SUMMERY OF THE UTILITY MODEL
The utility model provides a take temperature detection's buzzer drive circuit to solve traditional buzzer drive circuit when the chip temperature is too high, the chip is damaged or the bee calling organ is impaired shortcoming even entire system.
To solve the above technical problem, the present invention provides a buzzer driving circuit with temperature detection, which comprises a current limiting device, a diode D1, an amplifier, a frequency generation circuit, a gate control circuit, and a driving NMOS, wherein V1 is a reference voltage signal line, one end of the current limiting device is connected to a power line, the other end of the current limiting device is connected to a signal line V2, the positive electrode of the diode D1 is connected to a signal line V2, the negative electrode of the diode D1 is connected to a ground line, the negative input end of the amplifier is connected to a signal line V2, the positive input end of the amplifier is connected to a signal line V1, the output end of the amplifier is connected to a signal line Y, the frequency generation circuit outputs a signal line F, one input end of the gate control circuit is connected to a signal line F, the other input end of the gate control circuit outputs a signal line G, the gate of the driving NMOS, the source electrode of the drive NMOS tube is connected with the grounding wire, and the substrate of the drive NMOS tube is connected with the grounding wire.
With reference to fig. 1, the circuit parameters are properly designed, if the chip temperature is in the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, the voltage of the signal line V1 is higher than the voltage of the signal line V2 because the diode forward voltage drop is a negative temperature coefficient, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 1, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier indicates that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged. The circuit is simple to realize and has the advantages of high reliability and low cost.
Preferably, the current limiting device may be a resistor, or may also be an active device such as a current source or a MOS transistor, or a combination thereof.
Preferably, the diode D1 may be replaced by a device with temperature coefficient, such as a series-parallel combination of more than one diode, or a diode-connected MOS transistor, or a series-parallel combination of more than one diode-connected MOS transistor, or a diode-connected triode, or a series-parallel combination of more than one diode-connected triode.
Preferably, the driving NMOS transistor may be replaced by an NPN transistor, that is, the NPN transistor is used as the driving transistor of the buzzer.
The utility model discloses the beneficial effect who brings: the utility model provides a pair of take buzzer drive circuit of temperature detection can turn-off the consumption of drive NMOS pipe in order to reduce the chip when the chip temperature is too high to prevent that the chip from being damaged or buzzer or even entire system from being damaged, this circuit has the reliability height and advantage with low costs.
Drawings
Fig. 1 is a schematic structural diagram of the buzzer driving circuit with temperature detection of the present invention.
Fig. 2 is a buzzer driving circuit with temperature detection according to a first embodiment of the present invention.
Fig. 3 is a buzzer driving circuit with temperature detection according to a second embodiment of the present invention.
Fig. 4 is a buzzer driving circuit with temperature detection according to a third embodiment of the present invention.
Fig. 5 is a buzzer driving circuit with temperature detection according to a fourth embodiment of the present invention.
Fig. 6 is a schematic diagram of the background art.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, the present invention provides a buzzer driving circuit with temperature detection, including a current-limiting device, a diode D1, an amplifier, a frequency generation circuit, a gate control circuit, and a driving NMOS transistor, wherein V1 is a reference voltage signal line, one end of the current-limiting device is connected to a power line, the other end of the current-limiting device is connected to a signal line V2, the positive electrode of the diode D1 is connected to a signal line V2, the negative electrode of the diode D1 is connected to a ground line, the negative input end of the amplifier is connected to a signal line V2, the positive input end of the amplifier is connected to a signal line V1, the output end of the amplifier is connected to a signal line Y, the frequency generation circuit outputs a connection signal line F, one input end of the gate control circuit is connected to a signal line F, the other input end of the gate control circuit is connected to a signal line Y, the source electrode of the drive NMOS tube is connected with the grounding wire, and the substrate of the drive NMOS tube is connected with the grounding wire.
With reference to fig. 1, the circuit parameters are properly designed, if the chip temperature is in the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, the voltage of the signal line V1 is higher than the voltage of the signal line V2 because the diode forward voltage drop is a negative temperature coefficient, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 1, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier indicates that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
The first embodiment of the present invention, as shown in fig. 2, with reference to fig. 1, the current limiting device in fig. 1 is a resistor R1 in fig. 1, and the operation principle is the same as that in fig. 1.
The second embodiment of the present invention, as shown in fig. 3, with reference to fig. 1, the current limiting device in fig. 1 is a resistor R1 in fig. 3, and the diode D1 in fig. 1 is replaced by a PNP transistor Q1 in fig. 3, and the operation principle is the same as that of fig. 1.
The third embodiment of the present invention, as shown in fig. 4, comprises a current limiting device, an NMOS transistor N1, an amplifier, a frequency generating circuit, a gate control circuit, and a driving NMOS transistor, the power supply circuit comprises a voltage reference signal line V1, a current limiting device, a signal line V2, an NMOS tube N1 drain, a grid electrode connecting signal line V2, an NMOS tube N1 source electrode, a substrate connecting ground wire, an amplifier negative input end connecting signal line V2, an amplifier positive input end connecting signal line V1, an amplifier output end connecting signal line Y, a frequency generation circuit output signal line F connecting one input end of a grid control circuit, the other input end of the grid control circuit connecting signal line Y, a grid control circuit output signal line G connecting a drive NMOS tube grid electrode, a drive NMOS tube drain connecting output OUT, a drive NMOS tube source electrode connecting ground wire, and a drive NMOS tube substrate connecting ground wire.
With reference to fig. 4, the circuit parameters are properly designed, if the chip temperature is within the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the threshold voltage of the NMOS transistor is a negative temperature coefficient, the voltage of the signal line V1 is higher than the voltage of the signal line V2, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 4, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
As shown in fig. 4 in conjunction with fig. 1, diode D1 in fig. 1 is replaced by NMOS transistor N1 in fig. 4, and the operation principle is similar to that of fig. 1.
The fourth embodiment of the present invention, as shown in fig. 5, resistance R1, PMOS tube P1, an amplifier, a frequency generation circuit, a gate control circuit, a drive NMOS tube, wherein V1 is a reference voltage signal line, resistance R1 one end connecting power line, resistance R1 other end connecting signal line V2, PMOS tube P1 source electrode, substrate connecting signal line V2, PMOS tube P1 drain electrode, gate connecting ground wire, amplifier negative input end connecting signal line V2, amplifier positive input end connecting signal line V1, amplifier output end connecting signal line Y, frequency generation circuit output signal line F connects an input of gate control circuit, another input connecting signal line Y of gate control circuit, gate control circuit output signal line G connects a drive NMOS tube gate electrode, drive NMOS tube drain electrode connecting output OUT, drive NMOS tube source electrode connecting ground wire, drive NMOS tube substrate connecting ground wire.
With reference to fig. 5, the circuit parameters are properly designed, if the chip temperature is within the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the absolute value of the threshold voltage of the PMOS transistor is a negative temperature coefficient, the voltage of the signal line V1 is higher than the voltage of the signal line V2, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 5, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
As shown in fig. 5 in conjunction with fig. 1, the current limiting device in fig. 1 is resistor R1 in fig. 5, and diode D1 in fig. 1 is replaced by PMOS transistor P1 in fig. 5.
To sum up, the utility model provides a pair of take buzzer drive circuit of temperature detection turns off the drive tube when the chip temperature is too high and reduces the consumption to prevent that chip and system from being damaged, this circuit has the advantage that the reliability is high and with low costs.
The above description is only an example of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (7)
1. A buzzer drive circuit with temperature detection is characterized by comprising a current limiting device, a diode D1, an amplifier, a frequency generation circuit, a grid control circuit and a drive NMOS tube, wherein V1 is a reference voltage signal line, one end of the current limiting device is connected with a power line, the other end of the current limiting device is connected with a signal line V2, the positive electrode of the diode D1 is connected with a signal line V2, the negative electrode of the diode D1 is connected with a ground line, the negative input end of the amplifier is connected with a signal line V2, the positive input end of the amplifier is connected with a signal line V1, the output end of the amplifier is connected with a signal line Y, the output end of the frequency generation circuit is connected with a signal line F, one input end of the grid control circuit is connected with a signal line F, the other input end of the grid control circuit is connected with a signal line Y, the output of the grid control circuit is connected with, the substrate of the drive NMOS tube is connected with a grounding wire.
2. The buzzer driving circuit with temperature detection of claim 1, wherein the amplifier functions to detect whether the temperature of the chip is too high.
3. Buzzer driving circuit with temperature detection according to claim 1, characterised in that the amplifier connection alternatives are: the positive input end is connected with the signal line V2, and the negative input end is connected with the signal line V1.
4. The buzzer driving circuit with temperature detection of claim 1, wherein the gate control circuit functions such that when the output of the amplifier indicates that the temperature of the chip is too high, the gate control circuit outputs a signal line G to turn off the driving NMOS transistor, and when the output of the amplifier indicates that the temperature of the chip is normal, the gate control circuit outputs a signal F to normally pass through the frequency generation circuit.
5. The buzzer driving circuit with temperature detection of claim 1, wherein the current limiting device is specifically provided with: resistance, current source, MOS pipe.
6. Buzzer driving circuit with temperature detection according to claim 1, characterised in that the diode D1 has the alternative of: a series, parallel combination of more than one diode; MOS tube of diode connection method; MOS tubes connected in series and parallel by more than one diode; a diode-connected triode; more than one diode is connected in series and parallel.
7. The buzzer driving circuit with temperature detection of claim 1, wherein the driving NMOS transistor substitute device is an NPN transistor, that is, the NPN transistor is used as the driving transistor of the buzzer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020109528.3U CN213070608U (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit with temperature detection function |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020109528.3U CN213070608U (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit with temperature detection function |
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| CN213070608U true CN213070608U (en) | 2021-04-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063329A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063329A (en) * | 2020-01-22 | 2020-04-24 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
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