CN111063329A - Buzzer driving circuit with temperature detection function - Google Patents
Buzzer driving circuit with temperature detection function Download PDFInfo
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- CN111063329A CN111063329A CN202010063899.7A CN202010063899A CN111063329A CN 111063329 A CN111063329 A CN 111063329A CN 202010063899 A CN202010063899 A CN 202010063899A CN 111063329 A CN111063329 A CN 111063329A
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- 238000001514 detection method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
- G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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Abstract
The invention provides a buzzer driving circuit with temperature detection, which comprises a current-limiting device, a diode D1, an amplifier, a frequency generation circuit, a gate control circuit and a driving NMOS tube, wherein V2 and Y, F, G are signal lines, V1 is a reference voltage signal line, one end of the current-limiting device is connected with a power line, the other end of the current-limiting device is connected with V2, the positive electrode of the diode D1 is connected with V2, the negative electrode grounding line of the diode D1, the negative input end of the amplifier is connected with V2, the positive input end of the amplifier is connected with V1, the output end of the amplifier is connected with Y, the output of the frequency generation circuit is connected with F, one input end of the gate control circuit is connected with F, the other input end of the gate control circuit is. When the temperature of the chip is too high, the NMOS tube is turned off to reduce power consumption, and the circuit has the advantages of high reliability and low cost.
Description
Technical Field
The invention relates to the field of buzzer circuits, in particular to a buzzer driving circuit.
Background
As shown in fig. 6, the conventional buzzer circuit is composed of a frequency generation circuit and a driving tube, and when the temperature of the chip is too high, the circuit has the disadvantages that the power consumption is not reduced, the chip is damaged or the buzzer or even the whole system is damaged.
Disclosure of Invention
The invention provides a buzzer driving circuit with temperature detection, which aims to overcome the defect that a chip is damaged or a buzzer or even the whole system is damaged when the temperature of the chip is overhigh in the traditional buzzer driving circuit.
In order to solve the above technical problems, the present invention provides a buzzer driving circuit with temperature detection, comprising a current limiting device, a diode D1, an amplifier, a frequency generating circuit, a gate control circuit, and a driving NMOS, wherein V1 is a reference voltage signal line, one end of the current limiting device is connected to a power line, the other end of the current limiting device is connected to a signal line V2, the anode of the diode D1 is connected to a signal line V2, the cathode of the diode D1 is connected to a ground line, the negative input end of the amplifier is connected to a signal line V2, the positive input end of the amplifier is connected to a signal line V1, the output end of the amplifier is connected to a signal line Y, the output end of the frequency generating circuit is connected to a signal line F, one input end of the gate control circuit is connected to a signal line Y, the output of the gate control circuit is connected to a signal line G, the source electrode of the drive NMOS tube is connected with the grounding wire, and the substrate of the drive NMOS tube is connected with the grounding wire.
With reference to fig. 1, the circuit parameters are properly designed, if the chip temperature is in the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, the voltage of the signal line V1 is higher than the voltage of the signal line V2 because the diode forward voltage drop is a negative temperature coefficient, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 1, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier indicates that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged. The circuit is simple to realize and has the advantages of high reliability and low cost.
Preferably, the substrate of the drive NMOS tube is connected with a ground wire or connected with the source electrode of the drive NMOS tube.
Preferably, the current limiting device may be a resistor, or may also be an active device such as a current source or a MOS transistor, or a combination thereof.
Preferably, the diode D1 may be replaced by a device with temperature coefficient, such as a series-parallel combination of more than one diode, or a diode-connected MOS transistor, or a series-parallel combination of more than one diode-connected MOS transistor, or a diode-connected triode, or a series-parallel combination of more than one diode-connected triode.
Preferably, the driving NMOS transistor may be replaced by an NPN transistor, that is, the NPN transistor is used as the driving transistor of the buzzer.
The invention has the following beneficial effects: according to the buzzer driving circuit with temperature detection, when the temperature of a chip is too high, the NMOS tube is turned off to reduce the power consumption of the chip, so that the chip is prevented from being damaged or a buzzer or even the whole system is prevented from being damaged.
Drawings
Fig. 1 is a schematic structural diagram of a buzzer driving circuit with temperature detection according to the present invention.
Fig. 2 is a buzzer driving circuit with temperature detection according to a first embodiment of the present invention.
Fig. 3 is a buzzer driving circuit with temperature detection according to a second embodiment of the present invention.
Fig. 4 is a buzzer driving circuit with temperature detection according to a third embodiment of the present invention.
Fig. 5 is a buzzer driving circuit with temperature detection according to a fourth embodiment of the present invention.
Fig. 6 is a schematic diagram of the background art.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, the present invention provides a buzzer driving circuit with temperature detection, which includes a current limiting device, a diode D1, an amplifier, a frequency generating circuit, a gate control circuit, and a driving NMOS transistor, wherein V1 is a reference voltage signal line, one end of the current limiting device is connected to a power line, the other end of the current limiting device is connected to a signal line V2, the anode of the diode D1 is connected to a signal line V2, the cathode of the diode D1 is connected to a ground line, the negative input end of the amplifier is connected to a signal line V2, the positive input end of the amplifier is connected to a signal line V1, the output end of the amplifier is connected to a signal line Y, the frequency generating circuit outputs a signal line F, one input end of the gate control circuit is connected to a signal line F, the other input end of the gate control circuit is connected to a signal line Y, the gate of the gate control circuit is connected to a, the substrate of the drive NMOS tube is connected with a grounding wire.
With reference to fig. 1, the circuit parameters are properly designed, if the chip temperature is in the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, the voltage of the signal line V1 is higher than the voltage of the signal line V2 because the diode forward voltage drop is a negative temperature coefficient, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 1, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier indicates that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
A first embodiment of the present invention, as shown in fig. 2, in conjunction with fig. 1, the current limiting device in fig. 1 is a resistor R1 in fig. 1, and the operation principle is the same as that in fig. 1.
A second embodiment of the present invention is shown in fig. 3, and with reference to fig. 1, the current limiting device in fig. 1 is a resistor R1 in fig. 3, and the diode D1 in fig. 1 is replaced by a PNP transistor Q1 in fig. 3, and the operation principle is the same as that in fig. 1.
The third embodiment of the present invention, as shown in fig. 4, comprises a current limiting device, an NMOS transistor N1, an amplifier, a frequency generating circuit, a gate control circuit, a driving NMOS transistor, the power supply circuit comprises a voltage reference signal line V1, a current limiting device, a signal line V2, an NMOS tube N1 drain, a grid electrode connecting signal line V2, an NMOS tube N1 source electrode, a substrate connecting ground wire, an amplifier negative input end connecting signal line V2, an amplifier positive input end connecting signal line V1, an amplifier output end connecting signal line Y, a frequency generation circuit output signal line F connecting one input end of a grid control circuit, the other input end of the grid control circuit connecting signal line Y, a grid control circuit output signal line G connecting a drive NMOS tube grid electrode, a drive NMOS tube drain connecting output OUT, a drive NMOS tube source electrode connecting ground wire, and a drive NMOS tube substrate connecting ground wire.
With reference to fig. 4, the circuit parameters are properly designed, if the chip temperature is within the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the threshold voltage of the NMOS transistor is a negative temperature coefficient, the voltage of the signal line V1 is higher than the voltage of the signal line V2, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 4, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
As shown in fig. 4 in conjunction with fig. 1, diode D1 in fig. 1 is replaced by NMOS transistor N1 in fig. 4, and the operation principle is similar to that of fig. 1.
In a fourth embodiment of the present invention, as shown in fig. 5, a resistor R1, a PMOS transistor P1, an amplifier, a frequency generation circuit, a gate control circuit, and a driving NMOS transistor, where V1 is a reference voltage signal line, one end of the resistor R1 is connected to a power line, the other end of the resistor R1 is connected to a signal line V2, a source of the PMOS transistor P1, a substrate is connected to the signal line V2, a drain of the PMOS transistor P1 and a gate are connected to a ground line, a negative input end of the amplifier is connected to the signal line V2, a positive input end of the amplifier is connected to the signal line V1, an output end of the amplifier is connected to the signal line Y, an output signal line F of the frequency generation circuit is connected to one input end of the gate control circuit, another input end of the gate control circuit is connected to the signal line Y, an output signal line G of the gate control circuit is connected to.
With reference to fig. 5, the circuit parameters are properly designed, if the chip temperature is within the normal range, so that the voltage of the signal line V1 is lower than the voltage of the signal line V2, the output Y of the amplifier is at a low level, which indicates that the chip temperature is normal, and if the chip temperature is too high, since the absolute value of the threshold voltage of the PMOS transistor is a negative temperature coefficient, the voltage of the signal line V1 is higher than the voltage of the signal line V2, and the output Y of the amplifier is at a high level, which indicates that the chip temperature is too high; it can be seen that, in the connection of the signal line V1 and the signal line V2 shown in fig. 5, the high level of the output Y of the amplifier indicates that the chip temperature is too high. If the signal line V1 and the signal line V2 are connected to the positive input end and the negative input end of the amplifier in a reversed position, namely the signal line V1 is connected with the negative input end of the amplifier, the signal line V2 is connected with the positive input end of the amplifier, and the connection relations between the signal line V1 and the signal line V2 and other devices and modules are unchanged, the output Y of the amplifier is low level, which indicates that the temperature of the chip is too high. When the output of the amplifier indicates that the temperature of the chip is normal, the grid control circuit enables the output signal F of the frequency generation circuit to normally pass through, and drives the NMOS tube to normally drive the buzzer; when the output of the amplifier shows that the temperature of the chip is too high, the grid control circuit outputs a signal line G to cut off the drive NMOS tube, so that the power consumption of the circuit is reduced, and the chip and the system are prevented from being damaged.
As shown in fig. 5 in conjunction with fig. 1, the current limiting device in fig. 1 is resistor R1 in fig. 5, and diode D1 in fig. 1 is replaced by PMOS transistor P1 in fig. 5.
In summary, according to the buzzer driving circuit with temperature detection provided by the invention, when the temperature of the chip is too high, the driving tube is turned off to reduce power consumption, so that the chip and the system are prevented from being damaged, and the circuit has the advantages of high reliability and low cost.
The above description is only an example of the present invention, and is not intended to limit the present invention, and it is obvious to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. A buzzer drive circuit with temperature detection is characterized by comprising a current limiting device, a diode D1, an amplifier, a frequency generation circuit, a grid control circuit and a drive NMOS tube, wherein V1 is a reference voltage signal line, one end of the current limiting device is connected with a power line, the other end of the current limiting device is connected with a signal line V2, the positive electrode of the diode D1 is connected with a signal line V2, the negative electrode of the diode D1 is connected with a ground line, the negative input end of the amplifier is connected with a signal line V2, the positive input end of the amplifier is connected with a signal line V1, the output end of the amplifier is connected with a signal line Y, the output end of the frequency generation circuit is connected with a signal line F, one input end of the grid control circuit is connected with a signal line F, the other input end of the grid control circuit is connected with a signal line Y, the output of the grid control circuit is connected with, the substrate of the drive NMOS tube is connected with a grounding wire.
2. The buzzer driving circuit with temperature detection function as claimed in claim 1, wherein said driving NMOS transistor substrate is connected to ground or other potential.
3. The buzzer driving circuit with temperature detection of claim 1, wherein the amplifier functions to detect whether the temperature of the chip is too high.
4. The buzzer driving circuit with temperature detection as claimed in claim 1, wherein said amplifier is also connected with said signal line V2 at positive input terminal and said signal line V1 at negative input terminal.
5. The buzzer driving circuit with temperature detection of claim 1, wherein the gate control circuit functions such that when the output of the amplifier indicates that the temperature of the chip is too high, the gate control circuit outputs a signal line G to turn off the driving NMOS transistor, and when the output of the amplifier indicates that the temperature of the chip is normal, the gate control circuit outputs a signal F to normally pass through the frequency generation circuit.
6. The buzzer driving circuit with temperature detection of claim 1, wherein the current limiting device may be a resistor, an active device such as a current source or a MOS transistor, and a combination thereof.
7. The buzzer driving circuit with temperature detection function as claimed in claim 1, wherein said diode D1 can be replaced by a device with temperature coefficient, such as a series-parallel combination of more than one diode, or a diode-connected MOS transistor, or a series-parallel combination of more than one diode-connected MOS transistor, or a diode-connected triode, or a series-parallel combination of more than one diode-connected triode.
8. The buzzer driving circuit with temperature detection of claim 1, wherein the driving NMOS transistor can be replaced by an NPN transistor, i.e. the NPN transistor is used as the driving transistor of the buzzer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010063899.7A CN111063329A (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit with temperature detection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010063899.7A CN111063329A (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit with temperature detection function |
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| CN111063329A true CN111063329A (en) | 2020-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010063899.7A Pending CN111063329A (en) | 2020-01-22 | 2020-01-22 | Buzzer driving circuit with temperature detection function |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5555152A (en) * | 1992-10-28 | 1996-09-10 | Robert Bosch Gmbh | Monolithically integrated mos output-stage component having an excess-temperature protection device |
| JP2006237331A (en) * | 2005-02-25 | 2006-09-07 | Nissan Motor Co Ltd | Overtemperature detecting circuit and overtemperature protection circuit |
| CN101557092A (en) * | 2009-05-22 | 2009-10-14 | 杭州华三通信技术有限公司 | Protection circuit and circuit protection method |
| CN101931211A (en) * | 2009-06-17 | 2010-12-29 | 精工电子有限公司 | Overheating protection circuit and power supply integrated circuit |
| CN102055169A (en) * | 2009-10-28 | 2011-05-11 | 中国科学院微电子研究所 | Over-temperature protection circuit |
| CN103281836A (en) * | 2013-06-06 | 2013-09-04 | 东莞博用电子科技有限公司 | Chip over-temperature protection circuit applied to alternative current LED drive system |
| CN110335579A (en) * | 2019-08-16 | 2019-10-15 | 深圳南云微电子有限公司 | A kind of driving circuit of buzzer |
| CN111179891A (en) * | 2020-01-22 | 2020-05-19 | 无锡天极芯科技有限公司 | Drive circuit based on buzzer detects with temperature |
| CN213070608U (en) * | 2020-01-22 | 2021-04-27 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
-
2020
- 2020-01-22 CN CN202010063899.7A patent/CN111063329A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5555152A (en) * | 1992-10-28 | 1996-09-10 | Robert Bosch Gmbh | Monolithically integrated mos output-stage component having an excess-temperature protection device |
| JP2006237331A (en) * | 2005-02-25 | 2006-09-07 | Nissan Motor Co Ltd | Overtemperature detecting circuit and overtemperature protection circuit |
| CN101557092A (en) * | 2009-05-22 | 2009-10-14 | 杭州华三通信技术有限公司 | Protection circuit and circuit protection method |
| CN101931211A (en) * | 2009-06-17 | 2010-12-29 | 精工电子有限公司 | Overheating protection circuit and power supply integrated circuit |
| CN102055169A (en) * | 2009-10-28 | 2011-05-11 | 中国科学院微电子研究所 | Over-temperature protection circuit |
| CN103281836A (en) * | 2013-06-06 | 2013-09-04 | 东莞博用电子科技有限公司 | Chip over-temperature protection circuit applied to alternative current LED drive system |
| CN110335579A (en) * | 2019-08-16 | 2019-10-15 | 深圳南云微电子有限公司 | A kind of driving circuit of buzzer |
| CN111179891A (en) * | 2020-01-22 | 2020-05-19 | 无锡天极芯科技有限公司 | Drive circuit based on buzzer detects with temperature |
| CN213070608U (en) * | 2020-01-22 | 2021-04-27 | 无锡十顶电子科技有限公司 | Buzzer driving circuit with temperature detection function |
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