CN113659818B - Ideal diode circuit - Google Patents
Ideal diode circuit Download PDFInfo
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- CN113659818B CN113659818B CN202110901717.3A CN202110901717A CN113659818B CN 113659818 B CN113659818 B CN 113659818B CN 202110901717 A CN202110901717 A CN 202110901717A CN 113659818 B CN113659818 B CN 113659818B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses an ideal diode circuit which comprises an MOS (metal oxide semiconductor) tube M1, a body diode D1 and a detection and drive circuit, wherein the MOS tube M1 is connected in series with an input power supply return wire or an input power supply positive wire, the body diode D1 is connected with the MOS tube M1 in parallel, and the detection and drive circuit is connected with the MOS tube M1. The invention can realize the function of an ideal diode by only adopting a small number of basic components, does not need a complex and special control chip, does not need an additional auxiliary power supply, and has the advantages of simple and reliable circuit, low cost, stable performance and wide application range. The method is very suitable for being applied to occasions with low cost, small volume and high reliability.
Description
Technical Field
The invention relates to the technical field of ideal diodes, in particular to an ideal diode circuit formed by discrete devices.
Background
The diode is widely applied to the design of a power supply system and provides various protection functions for input power supply. For example, a power diode may be used at the input power port of the powered device to provide input voltage reverse-connection protection.
As shown in fig. 1 and 2, a device with a battery power supply inside, the diode is turned on when the external power supply voltage is higher than the battery voltage, and the external power supply can charge the battery and supply power to the load. When the external power supply voltage is lower than the battery voltage, the diode is cut off, the external power supply cannot supply power for the battery and the load, and the equipment is powered by the battery. The diode is at the input high potential in fig. 1 and at the input low potential in fig. 2.
In addition, as shown in fig. 3, the multiple output power supplies can be connected in parallel through diodes to provide a redundant backup of the system.
In many applications, schottky diodes are used in place of diodes to perform the various functions described above. Because the conduction voltage drop of the Schottky diode is smaller than that of the common diode, the conduction loss can be reduced. However, as the current continues to increase, the power loss on the schottky diode also increases significantly, which reduces the switching power of the system, increases the heat dissipation area, and reduces the power density of the system, thus limiting its range of use.
In addition, the schottky diode has a problem that a reverse leakage current is excessively large at a high temperature. In order to solve the above problems, an ideal diode circuit in which a MOSFET (hereinafter referred to as MOS transistor) is used to replace a diode is designed to further reduce the conduction loss of the schottky diode, and is widely used.
Due to the outstanding advantages of ideal diodes, there are many kinds of ideal diode circuits. The prior art can be generally divided into the following categories:
the first type is an ideal diode circuit built with discrete devices such as a resistor-regulator tube, as shown in fig. 4.
The gate pole opening voltage required by the MOS tube is generated by simple resistor voltage division, and the voltage of the gate pole opening voltage is stabilized by a voltage stabilizing tube, so that the MOS tube is prevented from being damaged due to overhigh voltage. One limitation of such a circuit in application is that the gate turn-on voltage is obtained by a voltage divider resistor, and the range of application is limited. When the external power supply voltage is low, the divided voltage is not enough to turn on the MOS tube, and the ideal diode cannot work. When the external power supply voltage is higher, the voltage regulator is required to work continuously, the gate voltage of the voltage regulator is kept not to be too high, and the power loss of the circuit is increased. For example, when the minimum value of the external power supply voltage is 5V, a common MOS transistor cannot be reliably conducted at the voltage, and an MOS transistor with a low gate-on voltage needs to be selected. Even if the MOS tube is selected, when the external power supply voltage is increased to more than 10V, the power consumption of the voltage stabilizing tube is obviously increased, the heat is increased, and the MOS tube cannot reliably work for a long time. The above reasons limit the range of applications of the circuit. Instead of the P-type MOSFET shown in fig. 4, an N-type MOSFET may be used.
The second kind of ideal diode circuit is realized based on a special integrated chip, and an ideal diode can be realized only by externally configuring an MOS tube and a small number of components. Many semiconductor manufacturers currently push such chips out, including Ti, linear, AD, etc. The circuit has perfect function and excellent performance. Besides the ideal diode function, the functions of switching on and switching off, protection and the like can be realized. The chip has the defects of higher selling price, product functions and encapsulation of different manufacturers and high replacement difficulty. If a chip is selected in the design, the dependence on the product of the manufacturer is serious, and the replacement difficulty is high. Once the price and supply quantity of the chip manufacturer are in question, the influence on the user is great. Fig. 5 shows a typical application circuit of LM74700, and fig. 6 shows the internal logic circuit of the chip.
In addition, the MOS tube and the control chip are integrated together (like the LM66100 typical application circuit shown in fig. 7), the product integration level is high, the performance is stable and reliable, and the use is simple. But still has the supply risk problem, and in addition, because the devices are all integrated together, the flexibility in design is not so high, and the application scope is limited.
Disclosure of Invention
The invention mainly aims to provide an ideal diode circuit, which aims to realize the function of an ideal diode by adopting a small number of basic components without a complex and special control chip or an additional auxiliary power supply.
In order to achieve the above object, the present invention provides an ideal diode circuit, which includes a MOS transistor M1, a body diode D1, and a detection and drive circuit, wherein the MOS transistor M1 is connected in series to an input power supply return line or an input power supply positive line, the body diode D1 is connected in parallel to the MOS transistor M1, and the detection and drive circuit is connected to the MOS transistor M1.
According to a further technical scheme of the present invention, the MOS transistor M1 is connected in series to the input power supply return line, the MOS transistor M1 is an N-type MOS transistor, the detection and drive circuit includes a resistor R1, a resistor R2, a resistor R3, an NPN-type triode Q1 and an NPN-type triode Q2, wherein one end of the resistor R1, the resistor R2 and the resistor R3 is respectively connected to the positive electrode of the input power supply positive line, the other end of the resistor R1 is respectively connected to the collector of the NPN-type triode Q1 and the gate of the MOS transistor M1, the other end of the resistor R2 is respectively connected to the base of the NPN-type triode Q1 and the base of the NPN-type triode Q2, the emitter of the NPN-type triode Q1 is connected to the source of the MOS transistor M1, the emitter of the NPN-type triode Q2 is connected to the drain of the MOS transistor M1, and the drain of the MOS transistor M1 is connected to the negative electrode of the input power supply return line.
The further technical scheme of the invention is that the MOS tube M1 is connected in series with the input power supply loop, the MOS tube M1 is an N-type MOS tube, and the detection and drive circuit comprises a resistor R1 and a resistor R B Resistance R P Resistance R L NPN type triode Q1 and PNP type triode Q2, wherein, resistance R1 and resistance R B One end of the resistor R1 is connected to the positive electrode of the input power supply positive line, the other end of the resistor R1 is connected to the collector of the NPN transistor Q1 and the gate of the MOS transistor M1, and the resistor R is connected to the gate of the NPN transistor Q1 B The other end of the resistor is respectively connected with the base electrode of the NPN type triode Q1 and the emitting electrode of the PNP type triode Q2, the emitting electrode of the NPN type triode Q1 and the collecting electrode of the PNP type triode Q2 are respectively connected with the source electrode of the MOS tube M1, and the PNP type triode Q2 is connected with the resistor R P One end of said resistor R P The other end of the resistor is respectively connected with the drain electrode of the MOS tube M1 and the resistor R L One end of said resistor R L The other end of the second switch is connected with the negative pole of the input power supply return wire.
The further technical scheme of the invention is that the MOS tube M1 is connected in series with the input power supply loop, the MOS tube M1 is an N-type MOS tube, and the detection and drive circuit comprises a resistor R1, a resistor R2, a resistor R3 and a resistor R L PNP type triode Q1, PNP type triode Q2, wherein, resistance R1's one end PNP type triode Q2's projecting pole is connected respectively the positive pole of the positive line of input power supply, resistance R1's the other end is connected respectively MOS pipe M1's gate pole PNP type triode Q1's projecting pole, PNP type triode Q1's base is connected respectively PNP type triode Q2's collecting electrode resistance R2's one end, PNP type triode Q1's collecting electrode resistance R2's the other end is connected respectively MOS pipe M1's source electrode, PNP type triode Q2's base with resistance R3's one end is connected, resistance R3's the other end is connected respectively PNP type triode Q2's baseThe drain electrode of the MOS tube M1 and the resistor R L One end of said resistor R L The other end of the second switch is connected with the negative pole of the input power supply return wire.
According to a further technical scheme of the invention, the MOS transistor M1 is connected in series to the input power supply positive line, the MOS transistor M1 is a P-type MOS transistor, the detection and drive circuit includes a PNP-type triode Q1, a PNP-type triode Q2, a resistor R1, a resistor R2, and a resistor R3, wherein a drain of the MOS transistor M1 and an emitter of the PNP-type triode Q2 are respectively connected to the positive electrode of the input power supply positive line, a gate of the MOS transistor M1 is connected to one end of the resistor R2, a source of the MOS transistor M1 is connected to an emitter of the PNP-type triode Q1, a base of the PNP-type triode Q2 is respectively connected to one end of the resistor R3 and the base of the PNP-type triode Q1, and the other ends of the resistor R1, the resistor R2, and the resistor R3 are respectively connected to the negative electrode of the input power supply return line.
The invention has the beneficial effects that: the invention can realize the function of an ideal diode by only adopting a small number of basic components, does not need a complex and special control chip, does not need an additional auxiliary power supply, and has the advantages of simple and reliable circuit, low cost, stable performance and wide application range. The method is very suitable for being applied to occasions with low cost, small volume and high reliability.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the embodiments or technical solutions of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art circuit configuration in which a diode is at an input high voltage level;
FIG. 2 is a schematic diagram of a prior art diode with an input low voltage;
FIG. 3 is a schematic diagram of a prior art circuit configuration for a diode for input redundancy backup;
FIG. 4 is a schematic circuit diagram of a simple ideal diode circuit formed by P-type MOSFETs in the prior art;
FIG. 5 is a schematic diagram of an exemplary application circuit of the LM74700 chip;
fig. 6 is a schematic diagram of the internal structure of the LM74700 chip;
FIG. 7 is a schematic diagram of an exemplary application circuit of LM 66100;
FIG. 8 is a schematic diagram of a circuit structure of the ideal diode circuit according to the first embodiment of the present invention with the MOS transistor placed on the input power supply return line;
FIG. 9 is a schematic diagram of a circuit structure of an ideal diode circuit according to the present invention, in which a MOS transistor of the first embodiment is placed on the positive line of the input power supply;
FIG. 10 is a circuit diagram of a second embodiment of an ideal diode circuit according to the present invention;
FIG. 11 is a schematic diagram of the main waveforms of the ideal diode circuit according to the second embodiment of the present invention;
FIG. 12 is a schematic circuit diagram of a third embodiment of an ideal diode circuit according to the present invention;
FIG. 13 is a schematic circuit diagram of a fourth embodiment of an ideal diode circuit according to the present invention;
fig. 14 is a schematic circuit diagram of a fifth embodiment of an ideal diode circuit according to the present invention.
The objects, features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
Referring to fig. 8 to 14, the present invention provides an ideal diode circuit, which can realize the function of an ideal diode with only a small number of basic components, without requiring a complex and dedicated control chip, and without requiring an additional auxiliary power supply, and has the advantages of simple and reliable circuit, low cost, and stable performance. The method is very suitable for being applied to occasions with low cost, small volume and high reliability.
Specifically, the first embodiment of the ideal diode circuit of the present invention includes an MOS transistor M1, a body diode D1, and a detection and drive circuit, where the MOS transistor M1 is connected in series to an input power supply return line or an input power supply positive line, the body diode D1 is connected in parallel to the MOS transistor M1, and the detection and drive circuit is connected to the MOS transistor M1.
The ideal diode circuit core device comprises an MOS tube, an MOS tube voltage detection circuit, an MOS tube drive circuit and the like. The invention does not need special IC chip of specific manufacturer, and has wide application range, high flexibility and low cost. The schematic circuit block diagram is shown in fig. 8 and fig. 9, and the MOS transistors are respectively placed on the return line (low level) and the positive line (high level) of the line. The diode shown in dashed lines is its parasitic body diode.
The working principle of the scheme of the invention is as follows: when the positive and negative ends of the external power supply power according to the positive and negative of the power supply ends shown in fig. 8 and 9, the body diode of the MOS transistor is turned on, a voltage drop (body diode conduction voltage drop) of about 1V is generated at the two ends of the MOS transistor, the voltage detection circuit detects the voltage value and sends a driving signal to the driving circuit, the driving circuit drives the MOS transistor to be turned on again, at this time, because the conduction internal resistance of the MOS transistor is low, the voltage drop at the two ends of the MOS transistor is reduced to a low value (line current x MOS transistor conduction resistance), and the ideal diode is turned on in the forward direction. When the positive and negative ends of the external power supply are opposite to the positive and negative directions of the voltage of the power supply end shown in fig. 8 and 9, or the voltage of the load end voltage is higher than the voltage of the power supply end due to the existence of a battery or a large capacitor, the voltage detection circuit controls the MOS tube to be closed, and the parasitic body diode of the MOS tube is also automatically closed. The ideal diode is turned off in the reverse direction.
It should be emphasized that in the solution of the present invention, the "power supply circuit" and the "driving circuit" in fig. 8 and 9 may be omitted, and the "voltage detection circuit" may be implemented by only a few simple discrete components without depending on a dedicated control chip.
In addition, compared with the scheme shown in fig. 4, the scheme of the invention is further characterized in that: 1. in the scheme, the driving voltage of the MOS tube is directly connected with the input voltage through a resistor. In the scheme of fig. 4, the driving voltage of the MOS transistor is obtained by dividing the input voltage by two resistors. Therefore, the scheme is suitable for working under the condition of lower input voltage, and the application range is expanded. 2. In the scheme of fig. 4, if the energy storage element such as a battery is included in the electric equipment, if the voltage value of the energy storage element can reach the turn-on voltage of the MOS transistor, the MOS transistor is always turned on even if the input voltage is lower than the voltage of the load terminal, and the MOS transistor does not have the reverse voltage cut-off capability. The invention has reverse cut-off ability under the working condition because of the voltage detecting circuit, thus really realizing the function of ideal diode.
As shown in fig. 10 and fig. 11, based on the first embodiment, the second embodiment of the present invention is proposed, in this embodiment, only a few transistors, resistors and power MOS transistors are needed, the transistor circuit can directly get power from the external power supply circuit input voltage Vcc, and the gate-source voltage of the driving MOS transistor is increased to drive the MOS transistor to turn on.
More specifically, as shown in fig. 10 and 11, in this embodiment, the MOS transistor M1 is connected in series to the input power supply return line, the MOS transistor M1 is an N-type MOS transistor, the detection and driving circuit includes a resistor R1, a resistor R2, a resistor R3, an NPN-type triode Q1 and an NPN-type triode Q2, wherein one end of the resistor R1, one end of the resistor R2, and one end of the resistor R3 are respectively connected to the positive electrode of the input power supply return line, the other end of the resistor R1 is respectively connected to the collector of the NPN-type triode Q1 and the gate of the MOS transistor M1, the other end of the resistor R2 is respectively connected to the base of the NPN-type triode Q1 and the base of the NPN-type triode Q2, the emitter of the NPN-type triode Q1 is connected to the source of the MOS transistor M1, the emitter of the NPN-type triode Q2 is connected to the drain of the MOS transistor M1, and the drain of the MOS transistor M1 is connected to the negative electrode of the input power supply return line.
In this embodiment, a power supply source is connected in series to the external power supply circuit, wherein the input power supply positive line is formed between the positive electrode of the external power supply circuit and the power supply source, and the input power supply return line is formed between the auxiliary electrode of the external power supply circuit and the power supply source.
The circuit operation and principle of the embodiment are as follows:
in this embodiment, the MOS transistor M1 is an N-type MOS transistor, and operates in a reverse mode, that is, the MOS transistor M starts to be turned on when the voltage difference between the drain and the source is negative. When the MOS transistor M1 is turned on, the voltage drop across it will be significantly lower than the turn-on voltage drop of its parasitic body diode D1. Therefore, when the driving MOS transistor works in the reverse direction, the gate voltage value of the driving MOS transistor needs to be controlled to ensure that the driving MOS transistor M1 is conducted. When the MOS transistor M1 is applied to the ideal diode circuit of this embodiment, an MOS transistor with low conduction internal resistance is selected, so that sufficient current capacity, sufficiently low conduction voltage drop and sufficiently low loss can be ensured. (Vds = I × Ron, vds is the MOSFET turn-on voltage drop, I is the current value flowing through the MOS transistor M1, ron is the turn-on internal resistance value. In the embodiment, schottky diodes can be connected in parallel at two ends of the MOS transistor M1, the cathode and anode directions are consistent with the body diode D1 of the MOS transistor M1, and the body diode D1 can be protected from being damaged by overlarge transient current when the MOS transistor M1 is conducted. In the embodiment, a voltage regulator tube can be connected in parallel between the gate electrode and the source electrode of the MOS transistor M1, so that the voltage difference between the gate electrode and the source electrode of the MOS transistor is not too high after the input voltage is increased.
The control principle of this circuit uses the dependency between the transistor collector current and the BE voltage. As shown in fig. 10, the collector and the emitter of the NPN transistor Q1 are connected to the gate and the source of the MOS transistor M1, respectively, and the voltage across the NPN transistor Q1 controls the gate voltage of the MOS transistor M1. The purpose of the NPN transistor Q2 is to control the voltage between the transistor BE of the NPN transistor Q1 and measure the voltage difference across the MOS transistor M1. If the voltage across the MOS transistor M1 is a positive value (the drain voltage is higher than the source voltage), the emitter voltage of the NPN transistor Q2 will be higher than the ground potential, so that the NPN transistor Q2 is turned off and the NPN transistor Q1 is turned on. This pulls down the collector voltage of the NPN transistor Q1 to turn off the MOS transistor M1. It should be noted that the base voltage of the NPN transistor Q1 can rise to a very high level and enter a saturation state, which does not affect the operating state of the circuit.
When the voltage at two ends of the MOS transistor M1 becomes a negative value (the drain voltage is lower than the source voltage), the emitter voltage of the NPN type triode Q2 is lower than the ground potential, and the NPN type triode Q1 starts to be turned off. The gate voltage of the MOS transistor M1 starts to rise until the MOS transistor M1 starts to conduct. The gate voltage is maintained to a voltage level just above the turn-on voltage. With the increase of the drain current, the gate voltage value will also increase, so as to ensure the voltage difference value between the two ends of the MOS transistor M1 to activate the triode to work.
The circuit of the embodiment is insensitive to selection of the NPN type triode Q2, and similar effects can be achieved even if different types of triodes with the same type are selected. The high-gain triode is adopted to form smaller voltage difference at two ends of the MOS transistor M1 correspondingly, and the conduction loss of the MOS transistor M1 is also smaller correspondingly. A high speed switching transistor, such as 2N2222, may be used to increase the response speed of the control circuit and reduce the reverse effect of the conduction transient.
In addition, the on-state voltage of the MOS transistor M1 may be reduced and the performance of the circuit may be improved by connecting a plurality of MOS transistors M1 in parallel and amplifying the gate drive signal using an operational amplifier. In the implementation, a high-speed operational amplifier with low output impedance may be used, but the instability problem caused by the high-speed operational amplifier is also noticed.
Based on the first embodiment, a third embodiment of the present invention is proposed, as shown in fig. 12, in this embodiment, the MOS transistor M1 is connected in series to the input power supply loop, the MOS transistor M1 is an N-type MOS transistor, and the detection and driving circuit includes a resistor R1 and a resistor R B And a resistor R P Resistance R L An NPN type triode Q1 and a PNP type triode Q2, wherein the resistor R1 and the resistor R B One end of the resistor R1 is connected to the positive electrode of the input power supply positive line, the other end of the resistor R1 is connected to the collector of the NPN transistor Q1 and the gate of the MOS transistor M1, and the resistor R is connected to the gate of the NPN transistor Q1 B The other end of the resistor is respectively connected with the base electrode of the NPN type triode Q1 and the emitting electrode of the PNP type triode Q2, the emitting electrode of the NPN type triode Q1 and the collecting electrode of the PNP type triode Q2 are respectively connected with the source electrode of the MOS tube M1, and the PNP type triode Q2 is connected with the resistor R P One end of said resistor R P The other end of the resistor is respectively connected with the drain electrode of the MOS tube M1 and the resistor R L One end of said resistor R L In addition toOne end of the input power supply loop is connected with the negative pole of the input power supply loop.
The present embodiment employs a pair of transistors that are a combination of PNP and NPN transistors. If the body diode D1 of the MOS transistor M1 flows a current, the DS voltage VDS thereof becomes negative. The base voltage of the PNP triode Q2 is pulled down, the PNP triode Q2 is conducted, and the emitter voltage is pulled down. The base voltage of the NPN triode Q1 is pulled down, and the NPN triode Q1 is turned off. The MOS transistor M1 is turned on, and the voltage across it is significantly reduced. The circuit of the embodiment amplifies the voltage at two ends of the MOS transistor M1 through a pair of cascaded triodes, thereby generating larger current gain. The stability of the circuit is affected by the large current gain through the resistor R P A 100pF capacitor connected in parallel across the capacitor will provide the improvement. When the external power supply voltage is lower than the battery voltage, the drain voltage of the MOS tube M1 is higher, the emitter voltage of the PNP triode Q2 is higher, the NPN triode Q1 is conducted, the gate voltage of the MOS tube M1 is lower, the MOS tube M1 is closed, and the ideal diode is cut off.
Based on the first embodiment, a fourth embodiment of the present invention is proposed, in which the detection and driving circuit is formed by two PNP transistors.
Specifically, as shown in fig. 13, in this embodiment, the MOS transistor M1 is connected in series to the input power supply loop, the MOS transistor M1 is an N-type MOS transistor, and the detection and driving circuit includes a resistor R1, a resistor R2, a resistor R3, and a resistor R L PNP type triode Q1, PNP type triode Q2, wherein, resistance R1's one end PNP type triode Q2's projecting pole is connected respectively the positive pole of input power supply positive line, resistance R1's the other end is connected respectively MOS pipe M1's gate pole PNP type triode Q1's projecting pole, PNP type triode Q1's base is connected respectively PNP type triode Q2's collecting electrode resistance R2's one end, PNP type triode Q1's collecting electrode resistance R2's the other end is connected respectively MOS pipe M1's source electrode, PNP type triode Q2's base with resistance R3's one end is connected, resistance R3's the other end is connected respectively MOS pipe M1's drain electrode resistance R3's one end is connected L One end of said resistor R L And the other end of the input power supply loop is connected with the negative electrode of the input power supply loop.
Further, based on the first embodiment, a fifth embodiment of the present invention is provided, as shown in fig. 14, in this embodiment, the MOS transistor M1 is connected in series to the input power supply positive line, the MOS transistor M1 is a P-type MOS transistor, the detection and driving circuit includes a PNP-type triode Q1, a PNP-type triode Q2, a resistor R1, a resistor R2, and a resistor R3, wherein a drain of the MOS transistor M1 and an emitter of the PNP-type triode Q2 are respectively connected to the positive electrode of the input power supply positive line, a gate of the MOS transistor M1 is connected to one end of the resistor R2, a source of the MOS transistor M1 is connected to the emitter of the PNP-type triode Q1, a base of the PNP-type triode Q2 is respectively connected to one end of the resistor R3 and the base of the PNP-type triode Q1, and the other ends of the resistor R1, the resistor R2, and the resistor R3 are respectively connected to the negative electrode of the input power supply return line.
In the embodiment, the P-type MOS tube is used for replacing the N-type MOS tube and is placed on the input power supply positive line of the circuit, and the circuit does not divide the ground line, so that the P-type MOS tube is more favored in many occasions. Generally, the conduction internal resistance of the P-type MOS transistor is higher than that of the N-type MOS transistor, so the conduction loss of the circuit of this embodiment is slightly larger, and the conduction loss may be reduced by selecting the P-type MOS transistor with the lowest conduction internal resistance as much as possible, or by connecting a plurality of P-type MOS transistors in parallel.
The working principle of the embodiment is as follows: when the body diode D1 of the P-type MOS tube M1 is conducted, the VDS is greater than 0, the drain voltage is higher than the source voltage, the PNP type triode Q2 is conducted, the base voltage of the PNP type triode Q2 is higher, the PNP type triode Q1 is closed, the gate voltage of the MOS tube M1 is low level, and the MOS tube M1 is conducted. When the body diode D1 of the P-type MOS tube M1 is cut off in a reversed phase mode, the VDS is less than 0, the drain voltage is lower than the source voltage, the PNP type triode Q1 is conducted, the PNP type triode Q2 is cut off, the gate voltage of the MOS tube M1 is high level, the MOS tube M1 is cut off, and the whole working process is equivalent to an ideal diode.
The invention has the beneficial effects that: the invention can realize the function of an ideal diode by only adopting a small number of basic components, does not need a complex and special control chip, does not need an additional auxiliary power supply, and has the advantages of simple and reliable circuit, low cost, stable performance and wide application range. The method is very suitable for being applied to occasions with low cost, small volume and high reliability.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent structures or equivalent processes performed by the present invention or directly or indirectly applied to other related technical fields are also included in the scope of the present invention.
Claims (2)
1. An ideal diode circuit is characterized by comprising an MOS (metal oxide semiconductor) tube M1, a body diode D1 and a detection and drive circuit, wherein the MOS tube M1 is connected in series with an input power supply loop, the body diode D1 is connected with the MOS tube M1 in parallel, and the detection and drive circuit is connected with the MOS tube M1;
the MOS tube M1 is an N-type MOS tube, and the detection and drive circuit comprises a resistor R1 and a resistor R B Resistance R P Resistance R L An NPN type triode Q1 and a PNP type triode Q2, wherein the resistor R1 and the resistor R B One end of the resistor R1 is respectively connected with the anode of the input power supply positive line, the other end of the resistor R1 is respectively connected with the collector of the NPN type triode Q1 and the gate of the MOS transistor M1, and the resistor R B The other end of the resistor is respectively connected with a base electrode of the NPN type triode Q1 and an emitting electrode of the PNP type triode Q2, the emitting electrode of the NPN type triode Q1 and a collecting electrode of the PNP type triode Q2 are respectively connected with a source electrode of the MOS tube M1, and a base electrode of the PNP type triode Q2 is connected with the resistor R P One end of said resistor R P The other end of the resistor is respectively connected with the drain electrode of the MOS tube M1 and the resistor R L One end of said resistor R L The other end of the input power supply loop is connected with the negative electrode of the input power supply loop;
if the body diode D1 of the MOS tube M1 flows current, the DS voltage VDS of the MOS tube M1 becomes a negative value; the base voltage of the PNP type triode Q2 is pulled down, the PNP type triode Q2 is conducted, and the emitter voltage is pulled down; the base voltage of the NPN type triode Q1 is pulled down, the NPN type triode Q1 is turned off, and the MOS tube M1 is turned on; when the external power supply voltage is lower than the battery voltage, the drain voltage of the MOS tube M1 is higher, the emitter voltage of the PNP type triode Q2 is higher, the NPN type triode Q1 is conducted, the gate voltage of the MOS tube M1 is lower, the MOS tube M1 is closed, and the ideal diode is cut off.
2. An ideal diode circuit is characterized by comprising an MOS (metal oxide semiconductor) tube M1, a body diode D1 and a detection and drive circuit, wherein the MOS tube M1 is connected in series with an input power supply loop, the body diode D1 is connected with the MOS tube M1 in parallel, and the detection and drive circuit is connected with the MOS tube M1;
MOS pipe M1 is N type MOS pipe, detect and drive circuit including resistance R1, resistance R2, resistance R3, resistance R L PNP type triode Q1, PNP type triode Q2, wherein, resistance R1's one end PNP type triode Q2's projecting pole is connected the positive pole of input power supply positive line respectively, resistance R1's the other end is connected respectively MOS pipe M1's gate pole PNP type triode Q1's projecting pole, PNP type triode Q1's base is connected respectively PNP type triode Q2's collecting electrode resistance R2's one end, PNP type triode Q1's collecting electrode resistance R2's the other end is connected respectively MOS pipe M1's source electrode, PNP type triode Q2's base with resistance R3's one end is connected, resistance R3's the other end is connected respectively MOS pipe M1's drain electrode resistance R3 L One end of said resistor R L The other end of the second switch is connected with the negative pole of the input power supply return wire.
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| US6469564B1 (en) * | 1998-04-14 | 2002-10-22 | Minebea Co., Ltd. | Circuit simulating a diode |
| TWI231093B (en) * | 2004-05-14 | 2005-04-11 | Quanta Comp Inc | One-way conduction device |
| US7636011B2 (en) * | 2006-07-27 | 2009-12-22 | Artesyn Technologies, Inc. | Controller for ORing field effect transistor |
| CN102545868A (en) * | 2011-12-28 | 2012-07-04 | 华为技术有限公司 | ORing Fet blocking circuit and power system |
| CN108768358A (en) * | 2018-08-14 | 2018-11-06 | 广州奥格智能科技有限公司 | A kind of ultra-low loss ideal diode |
| CN210776688U (en) * | 2019-11-22 | 2020-06-16 | 江苏东方赛云电子科技有限公司 | Ideal diode circuit device with very low cost |
| CN110890749A (en) * | 2019-12-24 | 2020-03-17 | 广州致远电子有限公司 | Power supply reverse connection prevention circuit and power supply circuit |
| CN211557134U (en) * | 2020-02-25 | 2020-09-22 | 广州奥格智能科技有限公司 | Low-loss high-end ideal diode |
| CN111193387A (en) * | 2020-02-25 | 2020-05-22 | 广州奥格智能科技有限公司 | Ultralow-loss low-end ideal diode |
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| CN109167413A (en) * | 2018-10-11 | 2019-01-08 | 佛山职业技术学院 | A kind of anti-reverse and anti-back flow circuit of battery charging |
| CN209994110U (en) * | 2019-05-31 | 2020-01-24 | 北京智行者科技有限公司 | NMOS tube-based reverse connection prevention protection circuit for vehicle-mounted direct-current power supply |
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