CN110890749A - Power supply reverse connection prevention circuit and power supply circuit - Google Patents

Power supply reverse connection prevention circuit and power supply circuit Download PDF

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CN110890749A
CN110890749A CN201911348174.6A CN201911348174A CN110890749A CN 110890749 A CN110890749 A CN 110890749A CN 201911348174 A CN201911348174 A CN 201911348174A CN 110890749 A CN110890749 A CN 110890749A
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power supply
type mos
circuit
reverse connection
tube
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周立功
荣加辉
杨程
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Guangzhou Zhiyuan Electronics Co Ltd
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Guangzhou Zhiyuan Electronics Co Ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/005Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of too low isolation resistance, too high load, short-circuit; earth fault
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0031Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0036Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using connection detecting circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

本申请涉及一种电源防反接电路和电源电路。电源防反接电路中,开关模块利用两个开关管与P型MOS管搭配,可根据接地端的电平高低,关断或导通P型MOS管。在电源接入短路时,P型MOS管在主干路切断回路,从而保护外围电路的元器件。运用于电源充放电场合时,若电源正确接入,则可利用P型MOS管的低导通阻抗,实现大电流充放电而产生较小热升;若电源非正确接入,则主干路P型MOS管关断,电流回路断开,保护电源及外围电路。即,本申请实施例可用于单向防反接和双向防反接,具备通用性;同时,电路的功能强大,无需辅助电源,成本低廉,能够保护电源和外围电路不受损坏,具有高可靠性。

Figure 201911348174

The present application relates to a power supply anti-reverse connection circuit and a power supply circuit. In the power supply anti-reverse connection circuit, the switch module uses two switch tubes to match the P-type MOS tube, and can turn off or turn on the P-type MOS tube according to the level of the ground terminal. When the power supply is short-circuited, the P-type MOS tube cuts off the circuit in the main road, thereby protecting the components of the peripheral circuit. When used in power supply charging and discharging occasions, if the power supply is connected correctly, the low on-resistance of the P-type MOS transistor can be used to realize high current charge and discharge and generate a small heat rise; if the power supply is not connected correctly, the main circuit P The type MOS tube is turned off, the current loop is disconnected, and the power supply and peripheral circuits are protected. That is, the embodiment of the present application can be used for one-way anti-reverse connection and two-way anti-reverse connection, and has versatility; at the same time, the circuit has powerful functions, no auxiliary power supply, low cost, can protect the power supply and peripheral circuits from damage, and has high reliability sex.

Figure 201911348174

Description

电源防反接电路和电源电路Power supply anti-reverse circuit and power circuit

技术领域technical field

本申请涉及电路技术领域,特别是涉及一种电源防反接电路和电源电路。The present application relates to the technical field of circuits, and in particular, to a power supply anti-reverse connection circuit and a power supply circuit.

背景技术Background technique

电源防反接技术主要包括物理层防反接和电路层防反接。物理防反接是采用物理结构方式在安装上做到防反接,比如手机电池安装,防反接接口等等;虽然其应用十分广泛,但该方式不够灵活。而电路防反接是利用集成电路IC(Integrated Circuit)和分立元器件搭配,自动实现防反接作用,保护电路正常工作。The power supply anti-reverse connection technology mainly includes the physical layer anti-reverse connection and the circuit layer anti-reverse connection. Physical anti-reverse connection is to use physical structure to prevent reverse connection in installation, such as mobile phone battery installation, anti-reverse connection interface, etc.; although its application is very extensive, this method is not flexible enough. The circuit anti-reverse connection is the use of integrated circuit IC (Integrated Circuit) and discrete components to automatically realize the anti-reverse connection function and protect the circuit from working normally.

在实现过程中,发明人发现传统技术中至少存在如下问题:单一方向的防反接电路设计功能单一,不能复用到充放电一体的电源的防反接中。During the implementation process, the inventor found that there are at least the following problems in the traditional technology: the anti-reverse connection circuit in a single direction has a single design function and cannot be reused in the anti-reverse connection of the power supply integrated with charging and discharging.

发明内容SUMMARY OF THE INVENTION

基于此,有必要针对传统的电路防反接不适用于双向充放电场合的问题,提供一种电源防反接电路和电源电路。Based on this, it is necessary to provide a power supply anti-reverse connection circuit and a power supply circuit in view of the problem that the traditional circuit anti-reverse connection is not suitable for bidirectional charging and discharging occasions.

为了实现上述目的,一方面,本申请实施例提供了一种电源防反接电路,包括:In order to achieve the above purpose, on the one hand, an embodiment of the present application provides a power supply anti-reverse connection circuit, including:

P型MOS管;P型MOS管的漏极用于连接直流电源的第一电极,P型MOS管的源极用于连接电压传输端口;P-type MOS tube; the drain of the P-type MOS tube is used to connect the first electrode of the DC power supply, and the source of the P-type MOS tube is used to connect the voltage transmission port;

接地端,用于连接直流电源的第二电极;a ground terminal, used to connect the second electrode of the DC power supply;

开关模块,包括第一开关管和第二开关管;第一开关管的第一极连接P型MOS管的栅极,且通过第一电阻连接P型MOS管的源极;第一开关管的第二极连接接地端;第二开关管的第一极连接第一开关管的控制极,且通过第二电阻连接P型MOS管的源极;第二开关管的第二极用于连接直流电源的第一电极;第二开关管的控制极连接接地端;The switch module includes a first switch tube and a second switch tube; the first pole of the first switch tube is connected to the gate of the P-type MOS tube, and is connected to the source of the P-type MOS tube through a first resistor; The second pole is connected to the ground terminal; the first pole of the second switch tube is connected to the control pole of the first switch tube, and is connected to the source of the P-type MOS tube through the second resistor; the second pole of the second switch tube is used to connect DC The first electrode of the power supply; the control electrode of the second switch tube is connected to the ground terminal;

开关模块在接地端的电平大于0V时,关断P型MOS管。The switch module turns off the P-type MOS tube when the level of the ground terminal is greater than 0V.

在其中一个实施例中,第一开关管为NPN型三极管或N型MOS管;In one of the embodiments, the first switch transistor is an NPN-type triode or an N-type MOS transistor;

第二开关管为NPN型三极管或N型MOS管。The second switch tube is an NPN type triode or an N type MOS tube.

在其中一个实施例中,电源防反接电路还包括:In one of the embodiments, the power supply anti-reverse connection circuit further includes:

电流抑制电路,连接在P型MOS管的漏极和直流电源的第一电极之间。The current suppression circuit is connected between the drain of the P-type MOS transistor and the first electrode of the DC power supply.

在其中一个实施例中,电流抑制电路包括电感;In one of the embodiments, the current suppression circuit includes an inductor;

电感的第一端连接P型MOS管的漏极,电感的第二端用于连接直流电源的第一电极。The first end of the inductor is connected to the drain of the P-type MOS transistor, and the second end of the inductor is used to connect to the first electrode of the DC power supply.

在其中一个实施例中,电源防反接电路还包括:In one of the embodiments, the power supply anti-reverse connection circuit further includes:

电压抑制电路;电压抑制电路的第一端连接P型MOS管的漏极;电压抑制电路的第二端连接接地端。a voltage suppression circuit; the first end of the voltage suppression circuit is connected to the drain of the P-type MOS transistor; the second end of the voltage suppression circuit is connected to the ground terminal.

在其中一个实施例中,电压抑制电路包括第一电容;In one of the embodiments, the voltage suppression circuit includes a first capacitor;

第一电容的第一端连接P型MOS管的漏极;第一电容的第二端连接接地端。The first end of the first capacitor is connected to the drain of the P-type MOS transistor; the second end of the first capacitor is connected to the ground end.

在其中一个实施例中,电源防反接电路还包括第二电容;In one of the embodiments, the power supply anti-reverse connection circuit further includes a second capacitor;

第二电容的第一端连接P型MOS管的栅极;第二电容的第二端连接接地端。The first end of the second capacitor is connected to the gate of the P-type MOS transistor; the second end of the second capacitor is connected to the ground end.

在其中一个实施例中,电源防反接电路还包括:In one of the embodiments, the power supply anti-reverse connection circuit further includes:

第三电阻,连接在第一开关管的第一极和P型MOS管的栅极之间;The third resistor is connected between the first pole of the first switch tube and the gate of the P-type MOS tube;

第四电阻,连接在第二开关管的控制极和接地端之间。The fourth resistor is connected between the control electrode of the second switch tube and the ground terminal.

在其中一个实施例中,电源防反接电路还包括充放电模块。充放电模块的第一传输端口连接电压传输端口,充放电模块的第二传输端口连接接地端。In one of the embodiments, the power supply anti-reverse connection circuit further includes a charging and discharging module. The first transmission port of the charging and discharging module is connected to the voltage transmission port, and the second transmission port of the charging and discharging module is connected to the ground terminal.

另一方面,本申请实施例还提供了一种电源电路,包括:On the other hand, an embodiment of the present application also provides a power supply circuit, including:

直流电源;DC power supply;

如上述的电源防反接电路。Such as the above-mentioned power supply anti-reverse circuit.

上述技术方案中的一个技术方案具有如下优点和有益效果:A technical scheme in the above-mentioned technical scheme has the following advantages and beneficial effects:

基于上述结构,开关模块利用两个开关管与P型MOS管搭配,可根据接地端的电平高低,关断或导通P型MOS管。在电源接入短路时,P型MOS管在主干路切断回路,从而保护外围电路的元器件。运用于电源充放电场合时,若电源正确接入,则可利用P型MOS管的低导通阻抗,实现大电流充放电而产生较小热升;若电源非正确接入,则主干路P型MOS管关断,电流回路断开,保护电源及外围电路。即,本申请实施例可用于单向防反接和双向防反接,具备通用性;同时,电路的功能强大,无需辅助电源,成本低廉,能够保护电源和外围电路不受损坏,具有高可靠性。Based on the above structure, the switch module uses two switch tubes to match with the P-type MOS tube, and can turn off or turn on the P-type MOS tube according to the level of the ground terminal. When the power supply is short-circuited, the P-type MOS tube cuts off the circuit in the main road, thereby protecting the components of the peripheral circuit. When used in power supply charging and discharging occasions, if the power supply is correctly connected, the low on-resistance of the P-type MOS transistor can be used to achieve high current charging and discharging and generate a small heat rise; if the power supply is not correctly connected, the main circuit P The type MOS tube is turned off, the current loop is disconnected, and the power supply and peripheral circuits are protected. That is, the embodiment of the present application can be used for one-way anti-reverse connection and two-way anti-reverse connection, and has versatility; at the same time, the circuit has powerful functions, no auxiliary power supply, low cost, can protect the power supply and peripheral circuits from damage, and has high reliability sex.

附图说明Description of drawings

通过附图中所示的本申请的优选实施例的更具体说明,本申请的上述及其它目的、特征和优势将变得更加清晰。在全部附图中相同的附图标记指示相同的部分,且并未刻意按实际尺寸等比例缩放绘制附图,重点在于示出本申请的主旨。The above and other objects, features and advantages of the present application will become more apparent from a more detailed description of the preferred embodiments of the present application shown in the accompanying drawings. The same reference numerals refer to the same parts throughout the drawings, and the drawings are not intentionally drawn to scale, the emphasis being placed on illustrating the subject matter of the present application.

图1为一个实施例中电源防反接电路的第一示意性结构图;1 is a first schematic structural diagram of a power supply anti-reverse connection circuit in one embodiment;

图2为一个实施例中电源防反接电路的第二示意性结构图;2 is a second schematic structural diagram of a power supply anti-reverse connection circuit in one embodiment;

图3为一个实施例中电源防反接电路的第三示意性结构图;3 is a third schematic structural diagram of a power supply anti-reverse connection circuit in one embodiment;

图4为一个实施例中电源防反接电路的第四示意性结构图;4 is a fourth schematic structural diagram of a power supply anti-reverse connection circuit in one embodiment;

图5为一个实施例中电源电路的结构示意图。FIG. 5 is a schematic structural diagram of a power supply circuit in an embodiment.

具体实施方式Detailed ways

为了便于理解本申请,下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是,本申请可以以许多不同的形式来实现,并不限于本文所描述的实施例。相反地,提供这些实施例的目的是使对本申请的公开内容更加透彻全面。In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. Preferred embodiments of the present application are shown in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

需要说明的是,当一个元件被认为是“连接”另一个元件,它可以是直接连接到另一个元件并与之结合为一体,或者可能同时存在居中元件。本文所使用的术语“第一极”、“第二极”、“第一端”以及“第二端”等类似的表述只是为了说明的目的。It should be noted that when an element is referred to as being "connected" to another element, it can be directly connected to and integrated with the other element, or intervening elements may also be present. The terms "first pole", "second pole", "first end", and "second end" and similar expressions are used herein for illustrative purposes only.

除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

目前,行业内物理层防反接和电路层防反接均有大量运用,对于电路繁杂,集成度较高,大功率等场合,选用物理结构式防反接,易于生产制造;而对于定制产品,自由度高等场合,选用电路级防反接较为合适。但是,物理防反接对于类似18650电池这种的结构无法设计有效防反接接口;一般的防反接电路设计功能单一,只能作为单一方向电路的防反接,不能复用到如充放电一体的锂电池的防反接中;并且,一般可靠性高的电源防反接电路需要逻辑控制,需要辅助电源加入,设计繁琐且成本高。At present, the physical layer anti-reverse connection and the circuit layer anti-reverse connection are widely used in the industry. For occasions such as complicated circuits, high integration, high power, etc., the physical structure type anti-reverse connection is selected, which is easy to manufacture; and for customized products, For occasions with high degrees of freedom, it is more appropriate to use circuit-level anti-reverse connection. However, the physical anti-reverse connection cannot be designed with an effective anti-reverse connection interface for structures such as 18650 batteries; the general anti-reverse connection circuit has a single design function and can only be used as a single-direction circuit for anti-reverse connection, and cannot be reused such as charging and discharging. The anti-reverse connection of the integrated lithium battery is in progress; and generally, the high-reliability power supply anti-reverse connection circuit requires logic control and auxiliary power supply, which is complicated in design and high in cost.

为此,本申请实施例提出的一种多用途的电源防反接电路,具有可拓展运用的优势,适用于一般的电源防反接电路,也适用于比较复杂的充放电一体式的锂电池防反接电路,很大程度上提高防反接电路的通用性和普适性。在工业生产制造或者消费电子制造,可为使用者提供较高的安全保障。For this reason, a multi-purpose power supply anti-reverse connection circuit proposed in the embodiment of the present application has the advantage of being expandable and applicable, and is suitable for general power supply anti-reverse connection circuits, as well as more complex charging and discharging integrated lithium batteries. Anti-reverse circuit, greatly improving the versatility and universality of anti-reverse circuit. In industrial manufacturing or consumer electronics manufacturing, it can provide users with high security.

具体地,本申请实施例通过开关管和P型MOS管搭配,极低成本地实现多种运用背景下的防反接功能,能够灵活运用在不同场合,主要特点包括:Specifically, the embodiment of the present application realizes the anti-reverse connection function under various application backgrounds at a very low cost through the combination of a switch tube and a P-type MOS tube, and can be flexibly used in different occasions. The main features include:

1.替代一般性质的防反接电路,在检测到电源反接之后,迅速关闭P型MOS管开关,断开系统电流回路,可靠性高;基于此,本申请实施例可在单向电源防反接电路中,保证集成芯片等外围器件不受电源反接的损坏,且抗干扰能力强。1. Instead of the general anti-reverse connection circuit, after detecting the reverse connection of the power supply, the P-type MOS tube switch is quickly turned off to disconnect the system current loop, and the reliability is high; In the reverse connection circuit, it is ensured that peripheral devices such as integrated chips are not damaged by the reverse connection of the power supply, and the anti-interference ability is strong.

2.可适用于锂电池充放电一体电路。锂电池充电放电双向进行,一般的解决方案是利用物理结构设计做防反接处理,但这种方式显然增加结构设计难度。本申请实施例可利用2个开关管的逻辑配合,驱动P型MOS管(金氧半场效晶体管,Metal-Oxide-Semiconductor Field-Effect Transistor)导通或关断,实现充放电一体的电路级防反接。2. It can be applied to the integrated circuit of lithium battery charging and discharging. The lithium battery is charged and discharged in both directions. The general solution is to use the physical structure design to prevent reverse connection, but this method obviously increases the difficulty of structural design. In the embodiment of the present application, the logic cooperation of two switching transistors can be used to drive a P-type MOS transistor (Metal-Oxide-Semiconductor Field-Effect Transistor) to be turned on or off, so as to realize the integrated circuit level of charging and discharging. Anti-reverse connection.

3.本申请实施例具有低成本,高可靠性的优势,利用数个分立元件,以纯硬件的逻辑方式实现功能通用的防反接电路设计,无需控制器和辅助电源的参与,简化设计难度,降低电路应用的难度。3. The embodiment of the present application has the advantages of low cost and high reliability, and uses several discrete components to realize the design of a general-purpose anti-reverse connection circuit in a purely hardware logic manner, without the participation of a controller and an auxiliary power supply, simplifying the design difficulty, Reduce the difficulty of circuit application.

在一个实施例中,提供了一种电源防反接电路,如图1所示,包括:In one embodiment, a power supply anti-reverse connection circuit is provided, as shown in FIG. 1 , including:

P型MOS管;P型MOS管的漏极用于连接直流电源的第一电极,P型MOS管的源极用于连接电压传输端口。P-type MOS transistor; the drain of the P-type MOS transistor is used to connect to the first electrode of the DC power supply, and the source of the P-type MOS transistor is used to connect to the voltage transmission port.

接地端,用于连接直流电源的第二电极。The ground terminal is used to connect the second electrode of the DC power supply.

开关模块,包括第一开关管和第二开关管。第一开关管的第一极连接P型MOS管的栅极,且通过第一电阻连接P型MOS管的源极;第一开关管的第二极连接接地端。第二开关管的第一极连接第一开关管的控制极,且通过第二电阻连接P型MOS管的源极;第二开关管的第二极用于连接直流电源的第一电极;第二开关管的控制极连接接地端。The switch module includes a first switch tube and a second switch tube. The first pole of the first switch tube is connected to the gate of the P-type MOS tube, and is connected to the source of the P-type MOS tube through a first resistor; the second pole of the first switch tube is connected to the ground terminal. The first pole of the second switch tube is connected to the control pole of the first switch tube, and is connected to the source pole of the P-type MOS tube through the second resistor; the second pole of the second switch tube is used to connect the first electrode of the DC power supply; The control electrodes of the two switches are connected to the ground terminal.

开关模块在接地端的电平大于0V时,关断P型MOS管。The switch module turns off the P-type MOS tube when the level of the ground terminal is greater than 0V.

具体而言,电源防反接电路包括P型MOS管、接地端和开关模块。P型MOS管的漏极连接直流电源的第一电极,源极连接电压传输端口,可用于关断或导通直流电源与电压传输端口之间的回路。接地端连接直流电源的第二电极;连接接地端的各电极均与直流电源的第二电极电连接。开关模块可根据接地端的电平,驱动P型MOS管关断或导通。具体地,开关模块至少包括两个开关管;P型MOS管的漏极连接直流电源的第一电极,栅极连接第一开关管的第一极,源极连接电源传输端口;并且,P型MOS管的源极通过第一电阻连接第一开关管的第一极,且通过第二电阻分别连接第二开关管的第一极和第一开关管的控制极;第一开关管的第二极连接接地端;第二开关管的第二极连接直流电源的第一极,控制极连接接地端。示例性地,第二开关管可根据接地端的电平实现导通或截断,进一步地,第一开关管可根据第二开关管的状态实现导通或截断,进而可改变P型MOS管的栅源电压大小,导通或截断P型MOS管,实现对直流电源与电压传输端口之间的通断控制。例如,在直流电源出现反接时,接地端的电平被拉高,开关模块中的第一开关管可保持断开状态,以使P型MOS管截断,进而断开电源回路,保护电源及外围电路。Specifically, the power supply anti-reverse connection circuit includes a P-type MOS tube, a ground terminal and a switch module. The drain of the P-type MOS transistor is connected to the first electrode of the DC power supply, and the source is connected to the voltage transmission port, which can be used to turn off or turn on the loop between the DC power supply and the voltage transmission port. The ground terminal is connected to the second electrode of the DC power supply; each electrode connected to the ground terminal is electrically connected to the second electrode of the DC power supply. The switch module can drive the P-type MOS transistor to turn off or turn on according to the level of the ground terminal. Specifically, the switch module includes at least two switch tubes; the drain of the P-type MOS tube is connected to the first electrode of the DC power supply, the gate is connected to the first pole of the first switch tube, and the source is connected to the power transmission port; The source of the MOS tube is connected to the first pole of the first switch tube through a first resistor, and is respectively connected to the first pole of the second switch tube and the control pole of the first switch tube through a second resistor; The pole is connected to the ground terminal; the second pole of the second switch tube is connected to the first pole of the DC power supply, and the control pole is connected to the ground terminal. Exemplarily, the second switch tube can be turned on or off according to the level of the ground terminal. Further, the first switch tube can be turned on or off according to the state of the second switch tube, and then the gate of the P-type MOS tube can be changed. The size of the source voltage, turn on or off the P-type MOS tube, and realize the on-off control between the DC power supply and the voltage transmission port. For example, when the DC power supply is reversely connected, the level of the ground terminal is pulled high, and the first switch tube in the switch module can be kept disconnected, so as to cut off the P-type MOS tube, thereby disconnecting the power supply loop to protect the power supply and peripherals. circuit.

在一个示例中,在直流电源连接正确时,P型MOS管由于自身体二极管存在,开关管导通,已经给电源传输端口提供稳定电源;体二极管自身导通压降较大,功耗较大,此时,由于接地端的电平为0,开关模块中的第一开关管可保持导通状态,以使P型MOS管完全导通,电能从低导通阻抗的MOS管输出,为电源传输端口通过安全电源,同时大幅降低MOS管功耗。In one example, when the DC power supply is connected correctly, the P-type MOS transistor is turned on due to the existence of its own body diode, which has provided a stable power supply to the power transmission port; the body diode itself has a large conduction voltage drop and consumes a large amount of power. , at this time, since the level of the ground terminal is 0, the first switch tube in the switch module can be kept on, so that the P-type MOS tube is completely turned on, and the power is output from the low on-resistance MOS tube for power transmission. The port passes the safety power supply, and at the same time greatly reduces the power consumption of the MOS tube.

基于此,不管在直流电源对电压传输端口进行放电的模式,还是在电压传输端口对直流电源进行充电的模式,开关模块均可根据接地端的电平变化确认是否直流电源是否反接,并能够在出现直流电源反接时、通过P型MOS管关断电源回路。Based on this, regardless of whether the DC power supply discharges the voltage transmission port or the voltage transmission port charges the DC power supply, the switch module can confirm whether the DC power supply is reversed according to the level change of the ground terminal When the DC power supply is reversed, the power circuit is turned off through the P-type MOS tube.

需要说明的是,P型MOS管的漏极连接直流电源的第一电极,源极连接电压传输端口;直流电源正确接入时的瞬时电流可通过P型MOS管的体二极管,从源极传输出来;示例性地,P型MOS管可为P沟道MOS管。开关模块用于在直流电源反接时,关断P型MOS管;在实现该逻辑功能的前提下,第一开关管和第二开关管可根据实际需求,选用相应类型的开关三极管或MOS管等,同时,第一电阻和第二电阻可用于保护开关管,其阻值可根据实际电路需求进行设置。应该注意的是,开关模块中的电路连接结构可根据实际需求进行设计,开关管的选型与具体的电路设计相关,此处不做具体限定;同时,开关模块还可包括其他开关管或器件,用于保护、扩展或匹配外围电路的工作需求等,例如限流电阻、上拉电阻、反相器及分压电阻等,此处不做具体限定。还应该说明的是,本申请实施例中的开关管和MOS管均可工作在饱和以及截止区域,起开关作用而无放大要求,即,本申请实施例运用硬件逻辑关系即可实现双向电路防反接,具有高可靠性和稳定性。It should be noted that the drain of the P-type MOS transistor is connected to the first electrode of the DC power supply, and the source is connected to the voltage transmission port; the instantaneous current when the DC power supply is correctly connected can be transmitted from the source through the body diode of the P-type MOS transistor out; exemplarily, the P-type MOS transistor can be a P-channel MOS transistor. The switch module is used to turn off the P-type MOS tube when the DC power supply is reversely connected; on the premise of realizing this logic function, the first switch tube and the second switch tube can choose the corresponding type of switch transistor or MOS tube according to actual needs etc. At the same time, the first resistor and the second resistor can be used to protect the switch tube, and their resistance values can be set according to actual circuit requirements. It should be noted that the circuit connection structure in the switch module can be designed according to actual needs, and the selection of the switch tube is related to the specific circuit design, which is not specifically limited here; at the same time, the switch module can also include other switch tubes or devices. , used to protect, expand or match the working requirements of peripheral circuits, such as current limiting resistors, pull-up resistors, inverters, and voltage divider resistors, which are not specifically limited here. It should also be noted that both the switch tube and the MOS tube in the embodiment of the present application can work in the saturation and cut-off regions, and play a switching role without amplification requirements. Reverse connection, with high reliability and stability.

电压传输端口用于连接外部的系统或外围电路等;具体地,电压传输端口可基于直流电源为系统供电,也可基于系统为直流电源充电。本申请实施例涉及的直流电源可为为系统供电的直流供电电源,还可为系统的储备电池,能够为系统供电也可接受系统充电。The voltage transmission port is used to connect external systems or peripheral circuits, etc. Specifically, the voltage transmission port can supply power to the system based on the DC power supply, and can also charge the DC power supply based on the system. The DC power supply involved in the embodiments of the present application may be a DC power supply for supplying power to the system, and may also be a reserve battery of the system, which can supply power to the system and also accept charging of the system.

本申请实施例的电路拓扑结构具有可靠性高、成本低和通用性强等特点,可支持拓展运用到不同方向,支持双向充放电场合下的电路防反接。具体地,本申请实施例可用于传统意义上的防反接需要场合,无需辅助电源,成本低廉,且采用纯硬件实现,电路拓扑简单,具有高可靠性。The circuit topology of the embodiments of the present application has the characteristics of high reliability, low cost, strong versatility, etc., can support expansion and application to different directions, and support circuit reverse connection in the case of bidirectional charging and discharging. Specifically, the embodiments of the present application can be used in occasions requiring anti-reverse connection in the traditional sense, no auxiliary power supply is required, the cost is low, and is implemented by pure hardware, the circuit topology is simple, and the reliability is high.

本申请实施例支持锂电池充放电管理应用,可防止电池防反接造成系统产生不可恢复的损伤;在锂电池正常接入时,锂电池电池可给系统正常供电,也可由外部电源给锂电池充电,实现双向电路一体化;若是锂电池反向接入,则开关模块根据接地端的电平变化,驱动P型MOS管切断电流回路,从而达成保护系统的目的。The embodiment of the present application supports the application of lithium battery charge and discharge management, which can prevent irreversible damage to the system caused by the anti-reverse connection of the battery; when the lithium battery is connected normally, the lithium battery can supply power to the system normally, or the lithium battery can be supplied by an external power supply Charging to achieve bidirectional circuit integration; if the lithium battery is reversely connected, the switch module drives the P-type MOS tube to cut off the current loop according to the level change of the ground terminal, so as to achieve the purpose of protecting the system.

在一个实施例中,如图2所示,第一开关管Q1为NPN型三极管。In one embodiment, as shown in FIG. 2 , the first switch transistor Q1 is an NPN transistor.

具体而言,第一开关管Q1可选用NPN型三极管,集电极连接P型MOS管Q3的栅极,且通过第一电阻连接P型MOS管Q3的源极;第一开关管Q1的发射极连接接地端,基极连接第二开关管Q2的第一极,且通过第二电阻连接P型MOS管Q3的源极。进一步地,第一电阻可为上拉电阻,能够起限流的作用,其阻值可根据实际电路需求进行设置。Specifically, an NPN transistor can be selected for the first switch transistor Q1, the collector is connected to the gate of the P-type MOS transistor Q3, and the source of the P-type MOS transistor Q3 is connected through a first resistor; the emitter of the first switch transistor Q1 The ground terminal is connected, the base electrode is connected to the first electrode of the second switch transistor Q2, and the source electrode of the P-type MOS transistor Q3 is connected through a second resistor. Further, the first resistor can be a pull-up resistor, which can play the role of current limiting, and its resistance value can be set according to actual circuit requirements.

在一个实施例中,第一开关管为N型MOS管。In one embodiment, the first switch transistor is an N-type MOS transistor.

具体而言,第一开关管可选用N型MOS管,漏极连接P型MOS管的栅极,且通过第一电阻连接P型MOS管的源极;第一开关管的源极连接接地端,栅极连接第二开关管的第一极,且通过第二电阻连接P型MOS管的源极。Specifically, the first switch can be an N-type MOS transistor, the drain is connected to the gate of the P-type MOS transistor, and the source of the P-type MOS transistor is connected through a first resistor; the source of the first switch is connected to the ground terminal , the gate is connected to the first pole of the second switch tube, and is connected to the source of the P-type MOS tube through the second resistor.

在一个实施例中,如图2所示,第二开关管Q2为NPN型三极管。In one embodiment, as shown in FIG. 2 , the second switch transistor Q2 is an NPN transistor.

具体而言,第二开关管Q2的集电极连接第一开关管Q1的控制极,且通过第二电阻连接P型MOS管Q3的源极;第二开关管Q2的发射极连接直流电源的第一电极,基极连接接地端且连接直流电源的第二电极。进一步地,第二电阻可为上拉电阻,能够起限流的作用,其阻值可根据实际电路需求进行设置。Specifically, the collector of the second switch transistor Q2 is connected to the control electrode of the first switch transistor Q1, and is connected to the source of the P-type MOS transistor Q3 through a second resistor; the emitter of the second switch transistor Q2 is connected to the first electrode of the DC power supply. an electrode, the base electrode is connected to the ground terminal and is connected to the second electrode of the DC power supply. Further, the second resistor can be a pull-up resistor, which can play the role of current limiting, and its resistance value can be set according to actual circuit requirements.

在一个实施例中,第二开关管为N型MOS管。In one embodiment, the second switch transistor is an N-type MOS transistor.

具体而言,第二开关管的漏极连接第一开关管的控制极,且通过第二电阻连接P型MOS管的源极;第二开关管的源极连接直流电源的第一电极,栅极连接接地端且连接直流电源的第二电极。Specifically, the drain of the second switch is connected to the control electrode of the first switch, and is connected to the source of the P-type MOS transistor through a second resistor; the source of the second switch is connected to the first electrode of the DC power supply, and the gate The electrode is connected to the ground terminal and is connected to the second electrode of the DC power supply.

在一个实施例中,电源防反接电路还包括:In one embodiment, the power supply anti-reverse connection circuit further includes:

电流抑制电路,连接在P型MOS管的漏极和直流电源的第一电极之间。The current suppression circuit is connected between the drain of the P-type MOS transistor and the first electrode of the DC power supply.

具体而言,在P型MOS管的漏极和直流电源的第一电极之间设置有电流抑制电路。电流抑制电路用于在直流电源接入时,抑制电流瞬变,减缓直流电源接入瞬间对MOS管的冲击,保护MOS管,进一步提高本申请实施例的可靠性。示例性地,电流抑制电路可采用现有的浪涌电流抑制电路来实现,也可主要由电感来实现,还可根据实际电源规格来设置,此处不做具体限定。Specifically, a current suppression circuit is provided between the drain of the P-type MOS transistor and the first electrode of the DC power supply. The current suppression circuit is used to suppress current transients when the DC power supply is connected, slow down the impact on the MOS tube when the DC power supply is connected, protect the MOS tube, and further improve the reliability of the embodiments of the present application. Exemplarily, the current suppression circuit may be implemented by using an existing surge current suppression circuit, or may be implemented mainly by an inductance, and may also be set according to actual power supply specifications, which is not specifically limited here.

在一个实施例中,电流抑制电路包括电感;电感的第一端连接P型MOS管的漏极,电感的第二端用于连接直流电源的第一电极。In one embodiment, the current suppression circuit includes an inductor; the first end of the inductor is connected to the drain of the P-type MOS transistor, and the second end of the inductor is connected to the first electrode of the DC power supply.

具体而言,在P型MOS管的漏极和直流电源的第一电极之间设置电感,可用于抑制电流瞬变,减缓直流电源接入瞬间对MOS管的冲击,且降低电流抑制电路的成本。Specifically, an inductance is provided between the drain of the P-type MOS transistor and the first electrode of the DC power supply, which can be used to suppress current transients, slow down the impact of the DC power supply on the MOS transistor when the DC power supply is connected, and reduce the cost of the current suppression circuit .

在一个实施例中,电源防反接电路还包括:In one embodiment, the power supply anti-reverse connection circuit further includes:

电压抑制电路;电压抑制电路的第一端连接P型MOS管的漏极;电压抑制电路的第二端连接接地端。a voltage suppression circuit; the first end of the voltage suppression circuit is connected to the drain of the P-type MOS transistor; the second end of the voltage suppression circuit is connected to the ground terminal.

具体而言,在P型MOS管的漏极和直流电源的第二极之间设有电压抑制电路,可用于抑制P型MOS管源极的电压突变,从而减缓接入电源瞬间对MOS管的冲击,保护MOS管,进一步提高本申请实施例的可靠性。示例性地,电压抑制电路可采用现有的浪涌电压抑制电路来实现,也可主要由电容来实现,还可根据实际电源规格来设置,此处不做具体限定。Specifically, a voltage suppression circuit is provided between the drain of the P-type MOS tube and the second pole of the DC power supply, which can be used to suppress the sudden change of the voltage of the source of the P-type MOS tube, thereby slowing down the moment when the power supply is connected to the MOS tube. impact, protect the MOS tube, and further improve the reliability of the embodiment of the present application. Exemplarily, the voltage suppression circuit may be implemented by using an existing surge voltage suppression circuit, or may be implemented mainly by a capacitor, and may also be set according to actual power supply specifications, which is not specifically limited here.

在一个实施例中,电压抑制电路包括第一电容;第一电容的第一端连接P型MOS管的漏极;第一电容的第二端连接接地端。In one embodiment, the voltage suppression circuit includes a first capacitor; the first end of the first capacitor is connected to the drain of the P-type MOS transistor; the second end of the first capacitor is connected to the ground.

具体而言,在P型MOS管的漏极和直流电源的第二极之间设有第一电容,可用于抑制P型MOS管源极的电压突变,从而减缓接入电源瞬间对MOS管的冲击,且降低电压抑制电路的成本。Specifically, a first capacitor is provided between the drain of the P-type MOS tube and the second pole of the DC power supply, which can be used to suppress the sudden change of the voltage of the source of the P-type MOS tube, thereby slowing down the instantaneous effect of the power supply on the MOS tube. impact, and reduce the cost of the voltage suppression circuit.

在一个实施例中,电源防反接电路还包括第二电容;第二电容的第一端连接P型MOS管的栅极;第二电容的第二端连接接地端。In one embodiment, the power supply anti-reverse connection circuit further includes a second capacitor; the first end of the second capacitor is connected to the gate of the P-type MOS transistor; the second end of the second capacitor is connected to the ground terminal.

具体而言,在P型MOS管的栅极和直流电源的第二极之间还设有第二电容;第二电容作为旁路电容,可用于防止对P型MOS管的栅极的冲击,保护MOS管,进一步提高本申请实施例的可靠性。Specifically, a second capacitor is also provided between the gate of the P-type MOS tube and the second pole of the DC power supply; the second capacitor, as a bypass capacitor, can be used to prevent the impact on the gate of the P-type MOS tube, The MOS transistor is protected, and the reliability of the embodiment of the present application is further improved.

在一个实施例中,电源防反接电路还包括:In one embodiment, the power supply anti-reverse connection circuit further includes:

第三电阻,连接第一开关管的第一极和P型MOS管的栅极之间。The third resistor is connected between the first pole of the first switch tube and the gate of the P-type MOS tube.

具体而言,在第一开关管的第一极和P型MOS管的栅极之间设有第三电阻,可起缓冲的作用,防止对P型MOS管的栅极的冲击,保护MOS管,进一步提高本申请实施例的可靠性。Specifically, a third resistor is provided between the first pole of the first switch tube and the gate of the P-type MOS tube, which can play a buffer role, prevent the impact on the gate of the P-type MOS tube, and protect the MOS tube , further improving the reliability of the embodiments of the present application.

在一个实施例中,电源防反接电路还包括:In one embodiment, the power supply anti-reverse connection circuit further includes:

第四电阻,连接在第二开关管的控制极和接地端之间。The fourth resistor is connected between the control electrode of the second switch tube and the ground terminal.

具体而言,在第二开关管的控制极和接地端之间设有第四电阻,可起限流的作用,防止直流电源反接对第二开关管造成的冲击,保护开关模块,进一步提高本申请实施例的可靠性。Specifically, a fourth resistor is provided between the control pole of the second switch tube and the ground terminal, which can act as a current limiter, prevent the impact of the reverse connection of the DC power supply on the second switch tube, protect the switch module, and further improve the reliability of the embodiments of the present application.

在一个示例中,如图3所示,VOUT用于给后级的系统提供安全电源,直流电源DC接入,上正下负时电源接入正常,由于GND(接地端)电平为0,Q2的基极输入电流为0,作为NPN型三极管Q2关断,此时Q1的基极电平被拉高,NPN型三极管Q1饱和导通,Q1集电极电平被拉低,P型MOS管Q3的Vgs为-VDC,故Q3导通,输出电压VOUT,为系统提供安全电源。一旦直流电源DC反接,分析如上,P型MOS管Q3关断,电源电流回路被关断,安全保护系统。In an example, as shown in Figure 3, V OUT is used to provide a safe power supply for the post-stage system, the DC power supply is connected to DC, and the power supply is connected normally when the upper is positive and the lower is negative, because the GND (ground) level is 0 , the base input current of Q2 is 0, as the NPN transistor Q2 is turned off, at this time the base level of Q1 is pulled high, the NPN transistor Q1 is saturated and turned on, the collector level of Q1 is pulled low, P-type MOS The Vgs of the tube Q3 is -V DC , so Q3 is turned on and the output voltage V OUT provides a safe power supply for the system. Once the DC power supply DC is reversed, the analysis is as above, the P-type MOS transistor Q3 is turned off, the power supply current loop is turned off, and the safety protection system.

具体而言,直流电源DC接入瞬间,电感L1抑制电流瞬变,第一电容C1抑制P型MOS管Q3源极电压突变,从而减缓接入电源瞬间对MOS管的冲击,保护MOS管不受损坏。电源上正下负接入,P型MOS管Q3由于自身体二极管存在,开关管导通,已经给系统提供稳定电源。但体二极管自身导通压降较大,功耗较大。接着由于GND电平为0,Q2的基极输入电流为0,作为NPN型三极管Q2关断,此时Q1的基极电平被拉高,NPN型三极管Q1饱和导通,Q1集电极电平被拉低,P型MOS管Q3的Vgs为-VDC,故Q3完全导通,接入瞬间、流经体二极管为系统提供的电能,改为流经低导通阻抗的MOS管输出的电能,为系统提供安全电源;同时,MOS管自身功耗大幅度降低。然而,一旦直流电源DC反接,地电平拉高,正输入电压被拉低,Q2的基极电平拉高,作为NPN型三极管Q2导通,此时Q1的基极电平被拉低,NPN型三极管Q1关断,Q1集电极电平被拉高,P型MOS管Q3的Vgs为VOUT≥0,故Q3关断,电源回路被关断,从而达到防反接的目的。P型MOS管关断,电源电流回路被关断,安全保护系统。Specifically, at the moment when the DC power supply DC is connected, the inductor L1 suppresses the current transient, and the first capacitor C1 suppresses the sudden change of the source voltage of the P-type MOS transistor Q3, thereby reducing the impact on the MOS transistor when the power supply is connected, and protecting the MOS transistor from damage. The upper and lower sides of the power supply are connected to the positive and the negative, and the P-type MOS transistor Q3 is turned on due to the existence of its own body diode, which has provided a stable power supply to the system. However, the body diode itself has a large conduction voltage drop and consumes a large amount of power. Then, since the GND level is 0, the base input current of Q2 is 0, and the NPN transistor Q2 is turned off. At this time, the base level of Q1 is pulled high, the NPN transistor Q1 is saturated and turned on, and the collector level of Q1 Pulled down, the Vgs of the P-type MOS transistor Q3 is -V DC , so Q3 is completely turned on, and the power supplied to the system through the body diode at the moment of access is changed to the power output by the MOS tube with low on-resistance , to provide a safe power supply for the system; at the same time, the power consumption of the MOS tube itself is greatly reduced. However, once the DC power supply DC is reversed, the ground level is pulled high, the positive input voltage is pulled down, the base level of Q2 is pulled up, as the NPN transistor Q2 is turned on, and the base level of Q1 is pulled down at this time. , the NPN transistor Q1 is turned off, the collector level of Q1 is pulled high, the Vgs of the P-type MOS transistor Q3 is V OUT ≥ 0, so Q3 is turned off, and the power circuit is turned off, so as to achieve the purpose of preventing reverse connection. The P-type MOS tube is turned off, the power supply current loop is turned off, and the safety protection system is provided.

在一个实施例中,电源防反接电路还包括充放电模块;充放电模块的第一传输端口连接电压传输端口,充放电模块的第二传输端口连接接地端。In one embodiment, the power supply anti-reverse connection circuit further includes a charging and discharging module; the first transmission port of the charging and discharging module is connected to the voltage transmission port, and the second transmission port of the charging and discharging module is connected to the ground terminal.

具体而言,电源防反接电路还可设有充放电模块。充放电模块的第一传输端口连接电压传输端口,第二传输端口连接直流电源的第二电极;基于此,充放电模块可基于直流电源向系统或外围电路供电,也可基于外部电源向直流电源充电。进一步地,充放电模块还可包括用于连接外部电路的第一电极和第二电极。在一个示例中,充放电模块还包括用于连接系统总电源的电源端口;基于此,系统总电源可作为系统或外围电路的主电源,而直流电源作为备用电源;系统总电源可为系统或外围电路供电,还可通过充放电模块为直流电源充电。具体地,充放电模块可用于对直流电源进行充放电管理,可主要由充放电芯片和电源端口等构成,此外不做具体限定。Specifically, the power supply anti-reverse connection circuit can also be provided with a charging and discharging module. The first transmission port of the charging and discharging module is connected to the voltage transmission port, and the second transmission port is connected to the second electrode of the DC power supply; based on this, the charging and discharging module can supply power to the system or peripheral circuits based on the DC power supply, and can also supply power to the DC power supply based on the external power supply Charge. Further, the charging and discharging module may further include first electrodes and second electrodes for connecting to an external circuit. In one example, the charging and discharging module further includes a power port for connecting the main power of the system; based on this, the main power of the system can be used as the main power of the system or peripheral circuits, and the DC power can be used as the backup power; the main power of the system can be the system or The peripheral circuit is powered, and the DC power supply can also be charged through the charging and discharging module. Specifically, the charge and discharge module can be used to manage the charge and discharge of the DC power supply, and can be mainly composed of a charge and discharge chip, a power port, and the like, which is not specifically limited.

在一个示例中,如图4所示,VSYS用于给后级的系统提供安全电源;锂电池电源接入,此时V2可作为充放电电源接口,可为系统供给电压,也可作为系统总电源为锂电池充电接口,只要锂电池上正下负正常接入,则GND电平为0,Q2的基极输入电流为0,作为NPN型三极管Q2关断,此时Q1的基极电平被拉高,NPN型三极管Q1饱和导通,Q1集电极电平被拉低,P型MOS管Q3的Vgs为-VBattery,故Q3导通,输出电压或输入电压为V2,为系统提供安全电源,经过锂电池充放电模块的输出电压为VSYS,或者系统总电源通过锂电池充放电管理方案给锂电池安全充电。然而一旦锂电池反接,分析如上,P型MOS管关断,锂电池充放电回路被切断,保护系统和锂电池安全。进一步地,此时若有系统总电源接入,则系统仍可以正常工作。In an example, as shown in Figure 4, V SYS is used to provide a safe power supply for the subsequent system; the lithium battery power supply is connected, and V2 can be used as a charging and discharging power interface at this time, which can supply voltage to the system, and can also be used as a system The main power supply is the lithium battery charging interface. As long as the upper and lower negatives of the lithium battery are connected normally, the GND level is 0, the base input current of Q2 is 0, and the NPN transistor Q2 is turned off. At this time, the base level of Q1 Pulled high, the NPN transistor Q1 is saturated and turned on, the collector level of Q1 is pulled low, the Vgs of the P-type MOS transistor Q3 is -V Battery , so Q3 is turned on, the output voltage or input voltage is V2, providing safety for the system The output voltage of the power supply through the lithium battery charging and discharging module is V SYS , or the total system power supply safely charges the lithium battery through the lithium battery charging and discharging management scheme. However, once the lithium battery is reversely connected, the analysis is as above, the P-type MOS tube is turned off, and the lithium battery charging and discharging circuit is cut off to protect the system and the lithium battery safety. Further, at this time, if the total power supply of the system is connected, the system can still work normally.

具体而言,考虑到工厂生产不规范或者用户使用不当会导致锂电池反方向接入电路,因此,本申请实施例还可用于防反接对象是锂电池的电路中。具体地,VCC为系统总供电电源,锂电池作为辅助电源,当VCC作为系统提供电源,可为锂电池充电,当VCC没有接入的时候,由辅助电源锂电池为系统提供电源。锂电池反接且VCC有接入时,系统给锂电池负极充电,影响电池寿命;若锂电池反接且VCC无接入时,锂电池为系统提供能量,由于负电压接入,会破坏系统,造成不可逆损坏。Specifically, considering that non-standard factory production or improper use by users will cause the lithium battery to be connected to the circuit in the reverse direction, the embodiment of the present application can also be used in a circuit where the object of anti-reverse connection is a lithium battery. Specifically, VCC is the total power supply of the system, and the lithium battery is used as the auxiliary power supply. When VCC is used as the power supply for the system, the lithium battery can be charged. When the VCC is not connected, the auxiliary power supply lithium battery provides the power supply for the system. When the lithium battery is reversely connected and the VCC is connected, the system will charge the negative electrode of the lithium battery, which will affect the battery life; if the lithium battery is reversely connected and the VCC is not connected, the lithium battery provides energy for the system. Due to the negative voltage connection, the system will be damaged. , causing irreversible damage.

系统总电源和辅助电源锂电池均可通过充放电模块为系统供电,系统输出电源只有一个VSYS。系统总电源和锂电池任意一个存在,系统均可以工作。由于存在防反接电路,即使锂电池反向接入,也不会损坏系统,若此时存在系统总电源,则系统仍可正常工作。Both the system main power supply and the auxiliary power supply lithium battery can supply power to the system through the charging and discharging module, and the system output power supply has only one V SYS . The system can work if either the total system power supply or the lithium battery exists. Due to the existence of the anti-reverse connection circuit, even if the lithium battery is reversely connected, the system will not be damaged. If the total power of the system exists at this time, the system can still work normally.

锂电池正常接入,电感L1抑制电流瞬变,第一电容C1抑制P型MOS管源极电压突变,从而减缓接入电源瞬间对MOS管的冲击,保护MOS管不受损坏。锂电池上正下负接入,若是无系统总电源VCC接入,P型MOS管由于自身体二极管存在,开关管导通,已给系统提供稳定电源。但体二极管自身导通压降较大,功耗较大。接着,由于GND电平为0,Q2的基极输入电流为0,作为NPN型三极管Q2关断,此时Q1的基极电平被拉高,NPN型三极管Q1饱和导通,Q1集电极电平被拉低,P型MOS管Q3的Vgs为-VBattery,故Q3完全导通,接入瞬间、流经体二极管为系统提供的电能,改为流经低导通阻抗的MOS管输出电能,进而为系统提供安全电源VSYS,同时,MOS管自身功耗大幅度降低。When the lithium battery is connected normally, the inductor L1 suppresses current transients, and the first capacitor C1 suppresses the sudden change of the source voltage of the P-type MOS tube, thereby slowing the impact on the MOS tube when the power is connected, and protecting the MOS tube from damage. The upper and lower sides of the lithium battery are connected to the upper and lower sides. If there is no system power supply VCC connected, the P-type MOS transistor will be turned on due to the existence of its own body diode, which has provided a stable power supply to the system. However, the body diode itself has a large conduction voltage drop and consumes a large amount of power. Then, since the GND level is 0, the base input current of Q2 is 0, as the NPN transistor Q2 is turned off, at this time, the base level of Q1 is pulled high, the NPN transistor Q1 is saturated and turned on, and the collector of Q1 is charged. The level is pulled down, the Vgs of the P-type MOS transistor Q3 is -V Battery , so Q3 is completely turned on, and the power supplied to the system by the body diode at the moment of access is changed to flow through the low on-resistance MOS tube to output power , thereby providing a safe power supply V SYS for the system, and at the same time, the power consumption of the MOS tube itself is greatly reduced.

若有系统总电源VCC接入,如上述描述一样,P型MOS管Q3的Vgs为-VBattery,Q3完全导通,系统总电源转成V2,可对锂电池进行管理充电。一旦锂电池反接,地电平拉高,正输入电压被拉低,Q2的基极电平拉高,作为NPN型三极管Q2导通,此时Q1的基极电平被拉低,NPN型三极管Q1关断,Q1集电极电平被拉高,P型MOS管Q3的Vgs为V2≥0,故Q3关断,电池接入回路被关断,锂电池充电或者放电都进行不了,从而达到防反接的目的,安全保护系统;此时,接入系统总电源VCC、VSYS输出正常,不影响系统正常工作。If the total system power VCC is connected, as described above, the Vgs of the P-type MOS transistor Q3 is -V Battery , Q3 is fully turned on, and the total system power is converted to V2, which can manage and charge the lithium battery. Once the lithium battery is reversely connected, the ground level is pulled high, the positive input voltage is pulled down, the base level of Q2 is pulled up, and the NPN transistor Q2 is turned on. At this time, the base level of Q1 is pulled down, and the NPN type The transistor Q1 is turned off, the collector level of Q1 is pulled high, and the Vgs of the P-type MOS transistor Q3 is V2≥0, so Q3 is turned off, the battery access circuit is turned off, and the lithium battery cannot be charged or discharged. The purpose of anti-reverse connection is to protect the system safely; at this time, the output of the total power supply VCC and V SYS of the access system is normal, which does not affect the normal operation of the system.

在一个实施例中,提供了一种电源电路,包括:In one embodiment, a power supply circuit is provided, comprising:

直流电源;DC power supply;

如上述的电源防反接电路。Such as the above-mentioned power supply anti-reverse circuit.

具体而言,电源防反接电路连接直流电源的两个电极,在直流电源反接时,及时断开电源回路,保护电源及外围电路。直流电源可为单向的供电电源,也可为充放电电源。Specifically, the power supply anti-reverse connection circuit connects the two electrodes of the DC power supply. When the DC power supply is reversely connected, the power supply circuit is disconnected in time to protect the power supply and peripheral circuits. The DC power supply can be a one-way power supply or a charging and discharging power supply.

在一个示例中,如图5所示,V1可为给系统供电的直流电源,也可为系统的储备电源(锂电池)。只要V1接入正确无反接,Q2的基极输入电流为0,作为NPN型三极管Q2关断,此时Q1的基极电平被拉高,NPN型三极管Q1饱和导通,Q1集电极电平被拉低,P型MOS管Q3的Vgs为-V1,故Q3导通;基于此,接入电源双向充放电在同一个电路拓扑中均可实现防反接功能。一旦V1反接,地电平拉高,正输入电压被拉低,Q2的基极电平拉高,作为NPN型三极管Q2导通,此时Q1的基极电平被拉低,NPN型三极管Q1关断,Q1集电极电平被拉高,P型MOS管Q3的Vgs为V2-V1(V1=0V),故Q3关断,电源回路被关断,从而达到防反接的目的。In one example, as shown in FIG. 5 , V1 may be a DC power supply for powering the system, or may be a reserve power supply (lithium battery) of the system. As long as V1 is connected correctly without reverse connection, the base input current of Q2 is 0, as the NPN transistor Q2 is turned off, at this time the base level of Q1 is pulled high, the NPN transistor Q1 is saturated and turned on, and the collector of Q1 is charged. If the level is pulled down, the Vgs of the P-type MOS transistor Q3 is -V1, so Q3 is turned on; based on this, the two-way charging and discharging of the connected power supply can realize the anti-reverse connection function in the same circuit topology. Once V1 is reversely connected, the ground level is pulled high, the positive input voltage is pulled down, the base level of Q2 is pulled up, and the NPN transistor Q2 is turned on. At this time, the base level of Q1 is pulled down, and the NPN transistor Q1 is turned off, the collector level of Q1 is pulled high, and the Vgs of the P-type MOS transistor Q3 is V2-V1 (V1=0V), so Q3 is turned off, and the power circuit is turned off, so as to achieve the purpose of preventing reverse connection.

以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above-described embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be regarded as the scope described in this specification.

以上所述实施例仅表达了本申请的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本申请范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干变形和改进,这些都属于本申请的保护范围。因此,本申请的保护范围应以所附权利要求为准。The above-mentioned embodiments only represent several embodiments of the present application, and the descriptions thereof are relatively specific and detailed, but should not be construed as limiting the scope of the present application. It should be pointed out that for those skilled in the art, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the scope of protection of the present application should be determined by the appended claims.

Claims (10)

1.一种电源防反接电路,其特征在于,包括:1. A power supply anti-reverse connection circuit is characterized in that, comprising: P型MOS管;所述P型MOS管的漏极用于连接直流电源的第一电极,所述P型MOS管的源极用于连接电压传输端口;P-type MOS transistor; the drain of the P-type MOS transistor is used to connect to the first electrode of the DC power supply, and the source of the P-type MOS transistor is used to connect to the voltage transmission port; 接地端,用于连接所述直流电源的第二电极;a ground terminal for connecting to the second electrode of the DC power supply; 开关模块,包括第一开关管和第二开关管;所述第一开关管的第一极连接所述P型MOS管的栅极,且通过第一电阻连接所述P型MOS管的源极;所述第一开关管的第二极连接所述接地端;所述第二开关管的第一极连接所述第一开关管的控制极,且通过第二电阻连接所述P型MOS管的源极;所述第二开关管的第二极用于连接所述直流电源的第一电极;所述第二开关管的控制极连接所述接地端;A switch module includes a first switch tube and a second switch tube; the first pole of the first switch tube is connected to the gate of the P-type MOS tube, and is connected to the source of the P-type MOS tube through a first resistor ; The second pole of the first switch tube is connected to the ground terminal; the first pole of the second switch tube is connected to the control pole of the first switch tube, and is connected to the P-type MOS tube through a second resistor the source electrode of the second switch tube; the second pole of the second switch tube is used to connect the first electrode of the DC power supply; the control pole of the second switch tube is connected to the ground terminal; 所述开关模块在所述接地端的电平大于0V时,关断所述P型MOS管。The switch module turns off the P-type MOS transistor when the level of the ground terminal is greater than 0V. 2.根据权利要求1所述的电源防反接电路,其特征在于,2. The power supply anti-reverse connection circuit according to claim 1, characterized in that, 所述第一开关管为NPN型三极管或N型MOS管;The first switch tube is an NPN-type triode or an N-type MOS tube; 所述第二开关管为NPN型三极管或N型MOS管。The second switch tube is an NPN type triode or an N type MOS tube. 3.根据权利要求1所述的电源防反接电路,其特征在于,还包括:3. The power supply anti-reverse connection circuit according to claim 1, characterized in that, further comprising: 电流抑制电路,连接在所述P型MOS管的漏极和所述直流电源的第一电极之间。The current suppression circuit is connected between the drain of the P-type MOS transistor and the first electrode of the DC power supply. 4.根据权利要求3所述的电源防反接电路,其特征在于,所述电流抑制电路包括电感;4. The power supply anti-reverse connection circuit according to claim 3, wherein the current suppression circuit comprises an inductor; 所述电感的第一端连接所述P型MOS管的漏极,所述电感的第二端用于连接所述直流电源的第一电极。The first end of the inductor is connected to the drain of the P-type MOS transistor, and the second end of the inductor is connected to the first electrode of the DC power supply. 5.根据权利要求1所述的电源防反接电路,其特征在于,还包括:5. The power supply anti-reverse connection circuit according to claim 1, characterized in that, further comprising: 电压抑制电路;所述电压抑制电路的第一端连接所述P型MOS管的漏极;所述电压抑制电路的第二端连接所述接地端。a voltage suppression circuit; the first end of the voltage suppression circuit is connected to the drain of the P-type MOS transistor; the second end of the voltage suppression circuit is connected to the ground terminal. 6.根据权利要求5所述的电源防反接电路,其特征在于,所述电压抑制电路包括第一电容;6. The power supply anti-reverse connection circuit according to claim 5, wherein the voltage suppression circuit comprises a first capacitor; 所述第一电容的第一端连接所述P型MOS管的漏极;所述第一电容的第二端连接所述接地端。The first terminal of the first capacitor is connected to the drain of the P-type MOS transistor; the second terminal of the first capacitor is connected to the ground terminal. 7.根据权利要求1至6任一项所述的电源防反接电路,其特征在于,还包括第二电容;7. The power supply anti-reverse connection circuit according to any one of claims 1 to 6, characterized in that, further comprising a second capacitor; 所述第二电容的第一端连接所述P型MOS管的栅极;所述第二电容的第二端连接所述接地端。The first terminal of the second capacitor is connected to the gate of the P-type MOS transistor; the second terminal of the second capacitor is connected to the ground terminal. 8.根据权利要求1至6任一项所述的电源防反接电路,其特征在于,还包括:8. The power supply anti-reverse connection circuit according to any one of claims 1 to 6, characterized in that, further comprising: 第三电阻,连接在所述第一开关管的第一极和所述P型MOS管的栅极之间;a third resistor, connected between the first pole of the first switch tube and the gate of the P-type MOS tube; 第四电阻,连接在所述第二开关管的控制极和所述接地端之间。The fourth resistor is connected between the control electrode of the second switch tube and the ground terminal. 9.根据权利要求1至6任一项所述的电源防反接电路,其特征在于,还包括充放电模块;9. The power supply anti-reverse connection circuit according to any one of claims 1 to 6, characterized in that, further comprising a charging and discharging module; 所述充放电模块的第一传输端口连接所述电压传输端口,所述充放电模块的第二传输端口连接所述接地端。The first transmission port of the charging and discharging module is connected to the voltage transmission port, and the second transmission port of the charging and discharging module is connected to the ground terminal. 10.一种电源电路,其特征在于,包括:10. A power supply circuit, comprising: 直流电源;DC power supply; 如权利要求1至9任一项所述的电源防反接电路。The power supply anti-reverse connection circuit according to any one of claims 1 to 9.
CN201911348174.6A 2019-12-24 2019-12-24 Power supply reverse connection prevention circuit and power supply circuit Pending CN110890749A (en)

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CN111864718A (en) * 2020-08-14 2020-10-30 精进电动科技股份有限公司 Anti-reverse connection circuit, electronic parking circuit and control method
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