TWI231093B - One-way conduction device - Google Patents
One-way conduction device Download PDFInfo
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- TWI231093B TWI231093B TW093113765A TW93113765A TWI231093B TW I231093 B TWI231093 B TW I231093B TW 093113765 A TW093113765 A TW 093113765A TW 93113765 A TW93113765 A TW 93113765A TW I231093 B TWI231093 B TW I231093B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
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Abstract
Description
1231093 五、發明說明（1) 【發明所屬之技術領域 本發明是有關於一種單向導通 種具有低順向電壓之單向導通裝置:，特別是有關於一 【先前技術】 於電子電路所需要之各種電子零 或缺的零件之一。但是，二極體一直 =極體是不可 是二極體的順向電壓(VF)不為〇v， 有-個缺點’就 改變’可得到順…約為〇 4v蕭=由半 體（Schottky D1〇de)。蕭特基二極體雖可以基二極 電路設計1的需4，然料某些需要二極體單J部份之 性，且要求極低的順向電壓之電路而言， :_通之特 無法滿足此種電路之需求。因此，實二 旅^ 一極體並 以降低電路之功率損失，並提ϊ 電源使用的效率。 I徒回 凊參照第5圖，其繪示乃使用一般二極體之電源供 電路50 0。電池BT1與電池BT2係用以提供負狐所需。 源，此負載例如是筆記型電腦。當電池BT1的電位高於電 池BT2的電位時，由於此時二極體D丨為順向偏壓，而二極 體D2為逆向偏壓，故二極體D1導通而二極體D2關閉，負載 RL可由電位較高的電池ΒΤι取得電源供應。反之，若電池 BT1的電位低於電池BT2的電位時，負載RL可由電位較高的 電池BT2取得電源供應。由於此處之二極體μ及D2係為一 般二極體，故負載RL之電壓會比電池βΤι或”2之供電電壓1231093 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a unidirectional conduction type unidirectional conduction device with a low forward voltage: in particular, it relates to a [prior art] required for an electronic circuit One of the various electronic zero or missing parts. However, the diode has always been = the polar body must not be a diode, the forward voltage (VF) is not 0v, there is a shortcoming 'change' to get forward ... about 04v Xiao = by half body (Schottky D10de). Although a Schottky diode can be used to design a base-diode circuit that requires 4, but some circuits that require a single J part of the diode and require very low forward voltage,: _ 通 之Especially can not meet the needs of such circuits. Therefore, the implementation of the second trip to reduce the power loss of the circuit and improve the efficiency of power supply. I only refer back to Figure 5, which shows a circuit using a normal diode power supply. Battery BT1 and battery BT2 are used to provide negative fox. Source, this load is, for example, a notebook computer. When the potential of battery BT1 is higher than the potential of battery BT2, since diode D1 is forward biased and diode D2 is reverse biased, diode D1 is turned on and diode D2 is turned off. The load RL can be powered by a battery BTi with a higher potential. Conversely, if the potential of the battery BT1 is lower than the potential of the battery BT2, the load RL can be powered by the battery BT2 with a higher potential. Because the diode μ and D2 are general diodes, the voltage of the load RL will be higher than the voltage of the battery βΤι or "2".
1231093 五、發明說明（2) 約降低0. 45V。 【發明内容】 有鑑於此，本發明的目的就是在提供一種單向導通裝 置，利用金氧半場效電晶體及BJT差動放大器，使此單向 導通裝置以極低的順向電壓實現單向導通特性。 根據本發明的目的，提出一種單向導通裝置，包括一 第一電晶體與一驅動電路。此第一電晶體具有一源極、一1231093 V. Description of the invention (2) About 0.45V. [Summary of the Invention] In view of this, the object of the present invention is to provide a unidirectional conduction device, which uses a metal oxide half field effect transistor and a BJT differential amplifier to make the unidirectional conduction device achieve a unidirectional with a very low forward voltage. Continuity characteristics. According to the purpose of the present invention, a unidirectional conduction device is provided, which includes a first transistor and a driving circuit. The first transistor has a source, a
沒極及一閘極。而驅動電路耦接至第一電晶體。此驅動電 路包括第二電晶體、第三電晶體、第一阻抗、第二阻抗及 第三阻抗。此第二電晶體具有第二射極、第二基極及第二 集極。此第三電晶體具有第三射極、第三基極及第三集 極。第三射極耦接至源極，第三集極耦接閘極，第二基極 係與第三基極耦接，第二基極與第二集極耦接。而第一陴 抗之一端耗接至汲極，另一端耦接至第二射極。第二阻抗 之 而耗接至弟二集極，另一端搞接至一固定電壓。第二 阻抗之一端耦接至第三集極，另一端耦接至固定電壓。 ▲ 為讓本發明之上述目的、特徵、和優點能更明顯易The pole and a gate. The driving circuit is coupled to the first transistor. The driving circuit includes a second transistor, a third transistor, a first impedance, a second impedance, and a third impedance. The second transistor has a second emitter, a second base, and a second collector. The third transistor has a third emitter, a third base, and a third collector. The third emitter is coupled to the source, the third collector is coupled to the gate, the second base is coupled to the third base, and the second base is coupled to the second collector. One end of the first impedance is connected to the drain, and the other end is coupled to the second emitter. The second impedance is connected to the second collector and the other end is connected to a fixed voltage. One end of the second impedance is coupled to the third collector, and the other end is coupled to a fixed voltage. ▲ In order to make the above objects, features, and advantages of the present invention more obvious and easier
It ’下文特舉一較佳實施例，並配合所附圖細説 明如下： 【實施方式】 ί ^第1圖’其繪示依照本發明之—第一實施例之 早11通骏置100。單向導通裝置100係利用金氧半場It 'exemplifies a preferred embodiment below and illustrates it in detail with the accompanying drawings as follows: [Embodiment Mode] ^^ 1' It shows an early 11-pass 100 according to the first embodiment of the present invention. One-way conduction device 100 series uses metal-oxygen half-field
1231093 五、發明說明（3) 效電晶體Q1及驅動裝置102，以使單向導通裝置100以極低 的順向電壓實現單向導通之特性。單向導通裝置1 〇 〇包括 一金氧半場效電晶體Ql、PNP型雙載子接面電晶體（BJT)電 晶體Q2、PNP型（BJT)電晶體Q3及電阻ri、R2、R3、R4及 R5 °金氡半場效電晶體Q1為？通道（p channei )電晶體 (即PMOS )，其源極S與汲極D係分別作為單向導通裝置 100之N極與p極。電晶體Q2及電晶體q3組成Bjt差動放大 器’電晶體Q2之基極B2係經由電阻R4耦接至電晶體Q2之集 極C2 °電晶體Q3之基極B3係經由電阻R5耦接至電晶體Q2之 集極C2 °電晶體Q2之集極C2及電晶體Q3之集極C3係分別經j 由電阻R2與R3耦接至地。電晶體Q3之集極C3係耦接至PMOS 電晶體Q1之閘極G，而電晶體Q3之射極E3係耦接至PMOS電 晶體Q1之源極S。電阻ri之一端係耦接至電晶體(^之汲極 D ’電阻R1之另一端係耦接至電晶體Q2之射極E2。其中， 電阻R2與R3之值係實質上相等，且電阻”之值係遠大於電 阻R1之值。較佳地，電阻R2之值係為電阻R1之值的數百 倍。 兹將單向導通裝置1 0 0之操作原理說明如下。當單向 導通裝置1 0 0為順向偏壓時，P極之電壓係比N極之電壓 高，此時電晶體Q2有一靜態電流IE2流過，而此靜態電流·· IE2流經電阻R1後，於電阻以之兩端係產生一跨壓VRi。跨 壓vri#5i佳地為數十毫伏（mV)。當p端之電壓上升至p端與n 端的電壓差高於VR1時，電晶體Q2之射極E2會隨著p端電壓 上升而上升。由於電阻R2之值甚大，雖然p端之電壓上1231093 V. Description of the invention (3) The effect transistor Q1 and the driving device 102 enable the unidirectional conduction device 100 to realize the unidirectional conduction characteristic with extremely low forward voltage. The unidirectional conduction device 100 includes a metal oxide half field effect transistor Q1, a PNP type bipolar junction transistor (BJT) transistor Q2, a PNP type (BJT) transistor Q3, and resistors ri, R2, R3, and R4. And R5 ° Golden half field effect transistor Q1? For a channel (p channei) transistor (ie, PMOS), the source S and the drain D are used as the N and p poles of the unidirectional conducting device 100, respectively. Transistor Q2 and transistor q3 form a Bjt differential amplifier. The base B2 of transistor Q2 is coupled to the collector of transistor Q2 via resistor R4. The base B3 of transistor Q3 is coupled to the resistor via resistor R5. The collector C2 of the crystal Q2 ° The collector C2 of the transistor Q2 and the collector C3 of the transistor Q3 are coupled to ground through j via resistors R2 and R3, respectively. The collector C3 of the transistor Q3 is coupled to the gate G of the PMOS transistor Q1, and the emitter E3 of the transistor Q3 is coupled to the source S of the PMOS transistor Q1. One end of the resistor ri is coupled to the transistor (the drain D ′ of the resistor R1 is coupled to the emitter E2 of the transistor Q2. Among them, the values of the resistors R2 and R3 are substantially equal, and the resistance is “ The value is much larger than the value of the resistor R1. Preferably, the value of the resistor R2 is hundreds of times the value of the resistor R1. The operation principle of the unidirectional conduction device 100 is described below. When the unidirectional conduction device 1 0 0 is the forward bias voltage, the voltage of the P pole is higher than the voltage of the N pole. At this time, the transistor Q2 has a static current IE2 flowing, and this static current IE2 flows through the resistor R1 and then the resistance A voltage across the terminal VRi is generated at both ends. The voltage across the voltage vri # 5i is preferably tens of millivolts (mV). When the voltage at the p terminal rises to a voltage difference between the p terminal and the n terminal higher than VR1, the emitter of the transistor Q2 E2 will increase as the voltage at the p terminal rises. Because the value of the resistor R2 is very large,
1231093_ 五、發明說明（4) " " " " ---- 升，電晶體Q2之靜態電流IE2會幾乎維持於定值，使得電 晶體Q2之VEB2(電晶體Q2之射極E2與基極B2之間的跨亦 幾乎維持固定。由於電晶體Q2之射極E2係隨著p端^電壓 上升而上升，使得電晶體Q2之基極B2的電壓亦隨著電晶體 Q2之射極E2之電壓上升而上升。如此，電晶體㈧之基極 之電壓亦隨著與電晶體Q2之基極B 2的電壓上升而上升。但 是’由於單向導通裝置1 〇 〇之N極之電壓係維持固定，使得 電晶體Q3之射極E3的電壓維持固定，而使得電晶體Q3之 VEB3(電晶體Q3之射極E3與基極B3之間的跨壓）會下降。這 樣一來’流經電晶體Q3的集極C3之電流IC3將會下降，使 得電阻R3之跨壓VR3下降。如此，將使得電晶體⑽集極C3 之電壓下降。當電晶體Q3集極C3之電壓下降至使電晶體qi 之VSG(電晶體Q1之源極S與閘極G之間的跨壓）大於電晶體 Q1之臨界電壓Vth之絕對值時，電晶體Q1開始導通，順向 電流ID係從P極流向N極。 反過來說，當N極比P極電壓高時，電晶體q3之射極E3 之電壓係高於電晶體Q2之射極E2的電壓，因此電晶體Q3導 通。電晶體Q3之集極C3為高電位，使得電晶體Qi完全關 閉，如此，將使得單向導通裝置丨〇 〇為逆向偏壓，單向導 通裝置100不導通。當N極與p極之電壓差高於電晶體Q2之 VEB2時，一逆向電流將由n極經由電晶體Q3之射極E3流向 電晶體Q3之源極B3，再經電阻R5及R4流向電晶體Q2之基 極B2，再流過電晶體Q2之射極E2及電阻R1，最後流向P 極。故電阻R4及R5的存在可降低此逆向電流之大小。如果1231093_ V. Description of the invention (4) " " " " ---- Lit, the static current IE2 of transistor Q2 will be almost maintained at a fixed value, so that VEB2 of transistor Q2 (emitter E2 of transistor Q2) The crossover to the base B2 is also almost fixed. Since the emitter E2 of the transistor Q2 rises with the voltage at the p terminal ^, the voltage of the base B2 of the transistor Q2 also follows the emission of the transistor Q2 The voltage of the electrode E2 rises and rises. In this way, the voltage of the base of the transistor Q2 also rises as the voltage of the base B 2 of the transistor Q2 rises. The voltage system is kept constant, so that the voltage of the emitter E3 of the transistor Q3 is kept constant, and the VEB3 of the transistor Q3 (the voltage across the emitter E3 of the transistor Q3 and the base B3) will decrease. The current IC3 flowing through the collector C3 of the transistor Q3 will decrease, causing the voltage across the resistor R3 to decrease VR3. In this way, the voltage of the transistor ⑽ collector C3 will decrease. When the voltage of the transistor Q3 collector C3 drops to Make the VSG of transistor qi (the voltage across source S and gate G of transistor Q1) larger than that of transistor When the threshold voltage Vth of Q1 is absolute, the transistor Q1 starts to conduct, and the forward current ID flows from the P pole to the N pole. Conversely, when the N pole is higher than the P pole voltage, the emitter of the transistor q3 is The voltage is higher than the voltage of the emitter E2 of the transistor Q2, so the transistor Q3 is turned on. The collector C3 of the transistor Q3 is at a high potential, so that the transistor Qi is completely turned off. In this way, the unidirectional conduction device 丨 〇〇 is Reverse bias, the unidirectional conduction device 100 does not conduct. When the voltage difference between the N and p poles is higher than VEB2 of transistor Q2, a reverse current will flow from the n pole to the source of transistor Q3 through the emitter E3 of transistor Q3. The electrode B3 flows to the base B2 of transistor Q2 through resistors R5 and R4, and then flows to the emitter E2 and resistor R1 of transistor Q2, and finally flows to the P pole. Therefore, the presence of resistors R4 and R5 can reduce this reverse current. Size. If
TW1652F(廣達）.ptd 第8頁 j231093 五、發明說明（5) ^曰曰曰，Q2與電晶體q3係為νΕβ電壓高於~極之最高電壓的 則本實施例之單向導通裝置1〇〇可不需使用電阻 、R5，電晶體Q2與電晶體Q3之基極”與⑽可以直接電 I*生連接。 紙舉各電阻值之一例，並配合pSpice之模擬結果以更 复一步說明本發明之第一實施例。請參照第2圖及第3圖， 斤、、曰示乃刀別為當單向導通裝置1 〇 〇之N極之電壓係固定 為10V，電阻以為151[歐姆，電阻R4與電阻R5均為1〇〇1(歐 姆’電阻R2與電阻R3均為1M歐姆時，單向導通裝置1〇〇之P 極與N極之電壓差VPN與順向電流ID之模擬結果圖（第2圖）< 與VPN與電晶體Q2之集極C2之電壓VQ2C(曲線302)與電晶體 Q1之閘極G之電壓Vg(曲線304)之模擬結果圖（第3圖）。如 第2圖所示’橫軸座標為p極與N極間之電壓差vpN，縱轴為 順向電流ID。由第2圖可知，當VPN等於30mV時，電晶體Q1 開始導通。其中，電晶體…導通後，電壓Vg之值與順向偏 壓V P N與順向電流ID之斜率，係由Q 3之共射極電流增益召所 決定。請參照第3圖，當電壓Vg等於電晶體Q2之集極C之電 壓VQ2C時，Vg與VQ2C幾乎等於電阻R1之跨壓vri，vR1約 等於（VP-VBE2)x (Rl/(Ri+R2)) = (l〇-〇·6) X (1.5k/(1.5k + 1 0 0 0k) ) = 1 4mV，其中，VP為p極之電壓。隨著VPN之增大， 電晶體Q1之閘極G極之電壓Vg係隨著下降。 其中，當順向電流ID小於〇· 2安培時，電晶體Q1並不 會完全導通。隨著順向電流ID之降低，電晶體Q1之阻抗會 增加。當順向電流ID為零時，電晶體!^將完全關閉。第2TW1652F (广 达) .ptd Page 8 j231093 V. Description of the invention (5) ^ Yue said, if Q2 and transistor q3 are νΕβ voltage higher than the highest voltage, the unidirectional conduction device 1 of this embodiment 1 〇〇No need to use resistor, R5, the base of transistor Q2 and transistor Q3 "and ⑽ can be directly connected to I *. Paper gives an example of each resistance value, and cooperate with pSpice simulation results to explain this step by step. The first embodiment of the invention. Please refer to FIG. 2 and FIG. 3, the voltage of the N pole of the one-way conduction device 100 is fixed to 10V, and the resistance is 151 [ohm, The resistance R4 and resistance R5 are both 1001 (when the resistance R2 and resistance R3 are 1M ohm, the voltage difference between the P and N poles of the one-way conduction device 100 and the VPN and forward current ID are simulated. Figure (Figure 2) < Simulation results of the voltage VQ2C (curve 302) of the collector C2 of the VPN and transistor Q2 and the voltage Vg (curve 304) of the gate G of the transistor Q1 (Figure 3). As shown in Figure 2, the horizontal axis is the voltage difference vpN between the p and N poles, and the vertical axis is the forward current ID. From Figure 2, it can be seen that when VPN is equal to 30mV At that time, transistor Q1 starts to conduct. Among them, after transistor…, the voltage Vg and the slope of forward bias VPN and forward current ID are determined by the common emitter current gain of Q 3. Please refer to In Figure 3, when the voltage Vg is equal to the voltage VQ2C of the collector C of the transistor Q2, Vg and VQ2C are almost equal to the voltage across the resistor R1, vri, and vR1 is approximately equal to (VP-VBE2) x (Rl / (Ri + R2)) = (l0-〇 · 6) X (1.5k / (1.5k + 1 0 0 0k)) = 1 4mV, where VP is the voltage of the p pole. With the increase of VPN, the gate of transistor Q1 The voltage Vg of the G pole decreases with time. Among them, when the forward current ID is less than 0.2 amps, the transistor Q1 will not be completely turned on. As the forward current ID decreases, the impedance of the transistor Q1 will increase. When the forward current ID is zero, the transistor! ^ Will be completely turned off. Part 2
TW1652F(廣達）.ptd 第9頁 1231093 五、發明說明（6) 圖所示之順向電流ID之實際曲線將由電晶體|^丨之特性來決 定。 此外電晶體Q2及Q3較佳地應採用孿生電晶體，如此電 晶體Q2及Q3之特性與參數將會較為接近，但亦不可能完全 相同。為使單向導通裝置1〇〇無逆向電流產生，故單向導 通裝置1 00導通時之順向電壓於設計上必須大於電晶體Q2 及Q3補償電壓（Offset voltage)。電阻R1之電阻值與電 晶體Q1之閘極G的轉態電壓可決定順向電壓之值。電阻ri 之電阻值較大時，順向電壓較大；電阻R1之電阻值較小 時，順向電壓較小。因此，可藉由調整電阻R丨之電阻值， 來改變單向導通裝置1 〇 〇導通時之順向電壓。 請參照第4圖，其繪示依照本發明之另一個實施例一 種單向導通裝置400，包括N通道（N channel )金氧半場 效電晶體Q1 (NM0S )及驅動裝置40 2。電晶體Q1之源極S與 汲極D係分別作為單向導通裝置之p極與n極。單向導通裝 置400之設計與工作原理與第1圖所示之單向導通裝置1〇〇 類似。只要將單向導通裝置100之電晶體Q1由p通道電晶體 換成N通道電晶體，並將PNP電晶體Q2與Q3更換成NPN電晶 體即可得到單向導通裝置40 0。 清參照第6圖’其繪不乃應用本發明之單向導通裝置 1 0 0之一種電源供應電路6 0 0。當應用本發明之第一實施例 之單向導通裝置1〇〇於電源供應電路6 〇〇時，其負載rl之電 壓會比電池BT1或BT2之供電電壓約降低只有數十mv，遠小 於習知使用一般二極體之電源供應電路5 〇 〇 (見第5圖）。TW1652F (Quanta) .ptd Page 9 1231093 V. Description of the invention (6) The actual curve of the forward current ID shown in the figure will be determined by the characteristics of the transistor | ^ 丨. In addition, the transistors Q2 and Q3 should preferably use twin transistors, so the characteristics and parameters of the transistors Q2 and Q3 will be closer, but they may not be completely the same. In order to make the unidirectional conducting device 100 have no reverse current, the forward voltage when the unidirectional conducting device 100 is turned on must be designed to be larger than the transistor Q2 and Q3 offset voltages. The resistance value of the resistor R1 and the transition voltage of the gate G of the transistor Q1 can determine the value of the forward voltage. When the resistance value of the resistor ri is larger, the forward voltage is larger; when the resistance value of the resistor R1 is smaller, the forward voltage is smaller. Therefore, the forward voltage of the unidirectional conducting device 100 can be changed by adjusting the resistance value of the resistor R1. Please refer to FIG. 4, which illustrates a unidirectional conduction device 400 according to another embodiment of the present invention, including an N-channel metal-oxide-semiconductor field-effect transistor Q1 (NM0S) and a driving device 402. The source S and the drain D of the transistor Q1 are used as the p and n poles of a unidirectional conducting device, respectively. The design and working principle of the unidirectional communication device 400 are similar to the unidirectional communication device 100 shown in FIG. 1. As long as the transistor Q1 of the unidirectional conduction device 100 is replaced by a p-channel transistor with an N-channel transistor, and the PNP transistors Q2 and Q3 are replaced with an NPN transistor, a unidirectional conduction device 40 0 can be obtained. Reference is made to FIG. 6 ', which depicts a power supply circuit 600 which is a unidirectional conduction device 100 of the present invention. When the unidirectional conduction device 100 of the first embodiment of the present invention is applied to the power supply circuit 600, the voltage of the load rl will be reduced by only a few tens of mV compared to the power supply voltage of the battery BT1 or BT2, which is far less than that of Xi. It is known that a general diode power supply circuit 500 (see FIG. 5) is used.
TW1652F(廣達）.ptd 第10頁 1231093 五、發明說明（7) 本發明上述實施例所揭露 優點： 路之早向導通裝置，具有以下 1 ·順向電壓極低。 2. 逆向漏電電流比蕭特基 3. 順向導通與逆向截止之择3 = 向大電流產生之狀況。 和為準確，且不會有逆 4 ·當單向導通裝置由順偏 晶體係由順向的飽合區轉換 ς圯偏時，金乳半場效電 止區，其係為漸近式之變化。/乍區，再轉換成逆向的截 極的電壓差接近於零伏特時，^單向導通裝置之Ρ極與Ν 有振堡不穩定的現象特時，本發明之單向導通I置不會 高效5率將本發明之單向導通裝置運用於整流電路時，可提 然其限；：；：明已以-較佳實施例揭露如上， ί發明之精神明當在不脫離 ί發明之保護範圍當視後附之;=者因此 TW1652F(廣達）.ptd 第〗〗頁 1231093 圖式簡單說明 【圖式簡單說明】 第1圖繪示乃依照本發明之一第一實施例之一種單向 導通裝置。 第2圖繪示乃Pspice模擬結果。 第3圖繪示乃P s p i c e模擬結果。 第4圖繪示乃依照本發明之另一個實施例一種單向導 通裝置。 第5圖繪示乃使用一般二極體之電源供應電路。 第6圖繪示乃應用本發明之單向導通裝置之一種電源 供應電路。 圖式標號說明 100、400 :單向導通裝置 102、402 :驅動裝置 302、304 :曲線 5 0 0、6 0 0 :電源供應電路 Q1 :金氧半場效電晶體 Q2、Q3 :電晶體TW1652F (Guangda) .ptd Page 10 1231093 V. Description of the invention (7) Disclosed by the above embodiment of the present invention Advantages: The early conduction device of the road has the following features: 1. Extremely low forward voltage. 2. Reverse leakage current than Schottky 3. Choice between forward conduction and reverse cut-off 3 = A situation where a large current is generated. The sum is accurate and there will be no inverse. 4 · When the unidirectional conduction device is switched from a cis-polarized system to a saturated saturated region, the golden milk half-effect stop region is an asymptotic change. / Zone, when the voltage difference between the reversed truncated poles is close to zero volts, ^ when the P pole and N of the unidirectional conduction device have the phenomenon of instability in vibration, the unidirectional conduction I of the present invention will not be set. When the unidirectional communication device of the present invention is applied to a rectifier circuit with a high efficiency of 5 ratios, its limits can be raised; :: The above has been disclosed in the preferred embodiment. The spirit of the invention should not depart from the protection of the invention. The scope should be attached to the view; = TW1652F (广 达) .ptd Page 〖〗 1239193 Simple illustration of the drawing [Simplified illustration of the drawing] The first drawing shows a list according to a first embodiment of the present invention Guide the device. Figure 2 shows the results of Pspice simulation. Figure 3 shows the simulation results of P s p i c e. FIG. 4 shows a unidirectional communication device according to another embodiment of the present invention. Figure 5 shows a power supply circuit using a general diode. FIG. 6 shows a power supply circuit using the unidirectional conduction device of the present invention. Explanation of drawing symbols 100, 400: One-way conduction device 102, 402: Driving device 302, 304: Curve 5 0 0, 6 0 0: Power supply circuit Q1: Metal oxide half field effect transistor Q2, Q3: Transistor
Rl 、R2、R3、R4、R5 ··電阻Rl, R2, R3, R4, R5 ·· Resistance
TW1652F(廣達）.ptd 第12頁TW1652F (Quanta) .ptd Page 12
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| TW093113765A TWI231093B (en) | 2004-05-14 | 2004-05-14 | One-way conduction device |
| US11/092,690 US7190207B2 (en) | 2004-05-14 | 2005-03-30 | One way conductor |
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| TW093113765A TWI231093B (en) | 2004-05-14 | 2004-05-14 | One-way conduction device |
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| TWI589107B (en) * | 2016-08-19 | 2017-06-21 | 廣達電腦股份有限公司 | One-direction conduct device |
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| US20090284303A1 (en) * | 2008-05-16 | 2009-11-19 | Zong Bo Hu | Control circuits and methods for controlling switching devices |
| US9621020B2 (en) * | 2008-05-16 | 2017-04-11 | Astec International Limited | Control circuits and methods for controlling switching devices |
| US9312400B2 (en) | 2011-07-01 | 2016-04-12 | Tyco Electronics Corporation | Power harvesting device |
| US20130182462A1 (en) * | 2012-01-13 | 2013-07-18 | Murata Manufacturing Co., Ltd. | Linear synchronous rectifier drive circuit |
| CN104104228B (en) * | 2014-08-04 | 2017-06-06 | 南京矽力杰半导体技术有限公司 | Circuit of synchronous rectification and apply its charging circuit |
| ITUB20155707A1 (en) * | 2015-11-18 | 2017-05-18 | St Microelectronics Srl | PILOT CIRCUIT, INTEGRATED CIRCUIT AND CORRESPONDENT DEVICE |
| US9496865B1 (en) * | 2015-11-25 | 2016-11-15 | Compuware Technology Inc. | Active isolation switch |
| TWI664814B (en) | 2017-11-03 | 2019-07-01 | 尼克森微電子股份有限公司 | One-direction conduction device |
| US10284189B1 (en) * | 2017-12-04 | 2019-05-07 | Sea Sonic Electronics Co., Ltd. | Redundant isolating switch control circuit |
| US10509426B2 (en) * | 2018-05-02 | 2019-12-17 | Analog Devices Global Unlimited Company | Methods and circuits for controlling and/or reducing current leakage during a low-power or inactive mode |
| WO2020034446A1 (en) * | 2018-08-14 | 2020-02-20 | 广州奥格智能科技有限公司 | Ultra-low loss ideal diode |
| CN108768358A (en) * | 2018-08-14 | 2018-11-06 | 广州奥格智能科技有限公司 | A kind of ultra-low loss ideal diode |
| DE112019007166T5 (en) * | 2019-05-09 | 2021-12-23 | Mitsubishi Electric Corporation | Rectifier circuit, DC power supply combination circuit and full-wave rectifier circuit |
| CN113659818B (en) * | 2021-08-06 | 2023-04-18 | 深圳信息职业技术学院 | Ideal diode circuit |
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| DE19805491C1 (en) * | 1998-02-11 | 1999-08-12 | Siemens Ag | Diode circuit with ideal diode characteristic |
| US6469564B1 (en) * | 1998-04-14 | 2002-10-22 | Minebea Co., Ltd. | Circuit simulating a diode |
| JP4068431B2 (en) * | 2001-11-19 | 2008-03-26 | セイコーインスツル株式会社 | Diode circuit and electronic device |
| JP4147972B2 (en) * | 2002-05-14 | 2008-09-10 | 株式会社デンソー | Micro current generator |
| TWI222754B (en) * | 2002-10-23 | 2004-10-21 | Quanta Comp Inc | One-way conduction apparatus |
| CA2424473A1 (en) * | 2003-04-04 | 2004-10-04 | Siemens Milltronics Process Instruments Inc. | Circuit for loss-less diode equivalent |
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| TWI589107B (en) * | 2016-08-19 | 2017-06-21 | 廣達電腦股份有限公司 | One-direction conduct device |
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| TW200537799A (en) | 2005-11-16 |
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