CN211879383U - 基于一种dbc布局的集成igbt封装结构 - Google Patents

基于一种dbc布局的集成igbt封装结构 Download PDF

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CN211879383U
CN211879383U CN202020989391.5U CN202020989391U CN211879383U CN 211879383 U CN211879383 U CN 211879383U CN 202020989391 U CN202020989391 U CN 202020989391U CN 211879383 U CN211879383 U CN 211879383U
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conducting layer
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frame
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田绍据
严明会
秦潇峰
胡强
蒋兴莉
王思亮
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Semi Future Technology Co
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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Abstract

本申请属于半导体封装以及功率模块领域，特别是基于一种DBC布局的集成IGBT封装结构，包括三相DBC结构，所述三相DBC结构的外部固定有框架，所述三相DBC结构的正面均焊接有多个芯片，三相DBC结构的背面直接焊接在散热器上，三相DBC结构中的各芯片之间相互连接，三相DBC结构直流端子处连接有叠层母排。本申请的三相DBC直接焊接到散热器上，这种工艺比传统工艺少了一层基板，极大的降低了热阻，提高了功率密度；同时这种工艺便于自动化实现，提高了生产效率。

Description

基于一种DBC布局的集成IGBT封装结构
技术领域
本申请属于半导体封装以及功率模块领域，特别是基于一种DBC布局的集成IGBT封装结构。
背景技术
随着功率半导体技术的发展，IGBT广泛应用于新能源汽车，新能源发电，轨道交通等，高效率和高功率密度也越来越成为应用中的关键指标。在这些应用中，IGBT常安装在散热器上，直流端子通过螺钉和母排端子相连，目前对功率密度要求高的应用中，IGBT底板采用PINFIN结构，用螺钉将IGBT模块固定到散热器水槽，水槽需要用密封垫密封，这种结构对安装工艺要求较高。另外由于IGBT直流端子和母排采用螺钉连接，直流环路面积大，导致杂散电感大，减小了IGBT工作安全区，减低了效率。
发明内容
为了克服现有技术中存在的上述问题，现在提出能减小了热阻，提高了功率密度、减小了杂散电感，扩大了IGBT工作安全区的基于一种DBC布局的集成IGBT封装结构。
为实现上述技术效果，本申请的技术方案如下：
基于一种DBC布局的集成IGBT封装结构，包括三相DBC结构，所述三相DBC结构的外部固定有框架，所述三相DBC结构的正面均焊接有多个芯片，三相DBC结构的背面直接焊接在散热器上，三相DBC结构中的各芯片之间相互连接，三相DBC结构直流端子处连接有叠层母排。
进一步地，三相DBC结构中的各芯片之间通过绑定线、铝带或铜带相互连接。
进一步地，所述叠层母排分为三层，包括第一导电层、中间层和第二导电层，第一导电层和第二导电层采用采用叠层结构，第一导电层和第二导电层之间用绝缘材料隔离形成中间层，第一导电层在端子处至少包括第一输出端子和第二输出端子，第二导电层在端子处至少分为4个输出端子，分别用超声焊接到三相DBC直流端子处。
进一步地，所述框架内部不限于采用硅胶进行灌封，例如还如可以采用环氧树脂灌封。
进一步地，所述三相DBC结构包括三块并联的DBC，框架上分别设置有信号端子引出端口和NTC温度传感器引出端口，单块的DBC上的IGBT栅极控制信号端、发射极控制信号端、NTC温度传感器键合到框架。
本申请的优点为：
1、本申请的三相DBC直接焊接到散热器上，这种工艺比传统工艺少了一层基板，极大的降低了热阻，提高了功率密度；同时这种工艺便于自动化实现，提高了生产效率。
2、本申请的直流母排采用叠层结构，同时正负端子分成两组结构，进一步减小了杂散电感，扩大了IGBT工作安全区。
附图说明
图1是本申请的结构布局图。
图2是本申请叠层母排的示意图。
图3是本申请叠层母排的输出端子示意图。
附图中1-芯片，2-绑定线，3-框架，4-散热器，6，7，8-三相DBC结构， 5-叠层母排，5-1-第一导电层，5-2第二导电层，5-1-1-第一输出端子，5-1-2-第二输出端子，5-2-1-输出端子。
具体实施方式
实施例1
基于一种DBC布局的集成IGBT封装结构包括三相DBC结构，所述三相DBC结构的外部固定有框架，三相DBC结构的正面均焊接有多个芯片，三相DBC结构的背面直接焊接在散热器上，三相DBC结构中的各芯片之间相互连接，三相DBC结构直流端子处连接有叠层母排。本申请的三相DBC直接焊接到散热器上，这种工艺比传统工艺少了一层基板，极大的降低了热阻，提高了功率密度；同时这种工艺便于自动化实现，提高了生产效率。
实施例2
基于一种DBC布局的集成IGBT封装结构包括三相DBC结构，所述三相DBC结构的外部固定有框架，所述三相DBC结构的正面均焊接有多个芯片，三相DBC结构的背面直接焊接在散热器上，三相DBC结构中的各芯片之间相互连接，三相DBC结构直流端子处连接有叠层母排。
三相DBC结构中的各芯片之间通过绑定线、铝带或铜带相互连接。
叠层母排分为三层，包括第一导电层、中间层和第二导电层，第一导电层和第二导电层采用采用叠层结构，第一导电层和第二导电层之间用绝缘材料隔离形成中间层，第一导电层在端子处至少包括第一输出端子和第二输出端子，第二导电层在端子处至少分为4个输出端子，分别用超声焊接到三相DBC直流端子处。
框架内部不限于采用硅胶进行灌封，例如还如可以采用环氧树脂灌封。
三相DBC结构包括三块并联的DBC，框架上分别设置有信号端子引出端口和NTC温度传感器引出端口，单块的DBC上的IGBT栅极控制信号端、发射极控制信号端、NTC温度传感器键合到框架。
本申请的三相DBC直接焊接到散热器上，这种工艺比传统工艺少了一层基板，极大的降低了热阻，提高了功率密度；同时这种工艺便于自动化实现，提高了生产效率。本申请的直流母排采用叠层结构，同时正负端子分成两组结构，进一步减小了杂散电感，扩大了IGBT工作安全区。

Claims (5)

1.基于一种DBC布局的集成IGBT封装结构，其特征在于：包括三相DBC结构（6，7，8），所述三相DBC结构的外部固定有框架（3），所述三相DBC结构（6，7，8）的正面均焊接有多个芯片，三相DBC结构（6，7，8）的背面直接焊接在散热器（4）上，三相DBC结构中的各芯片之间相互连接，三相DBC结构（6，7，8）直流端子处连接有叠层母排（5）。
2.根据权利要求1所述的基于一种DBC布局的集成IGBT封装结构，其特征在于：三相DBC结构中的各芯片之间通过绑定线（2）、铝带或铜带相互连接。
3.根据权利要求1所述的基于一种DBC布局的集成IGBT封装结构，其特征在于：所述叠层母排（5）分为三层，包括第一导电层、中间层和第二导电层，第一导电层（5-1）和第二导电层（5-2）采用叠层结构，第一导电层和第二导电层之间用绝缘材料隔离形成中间层，第一导电层（5-1）在端子处至少包括第一输出端子（5-1-1）和第二输出端子（5-1-2），第二导电层（5-2）在端子处至少分为4个输出端子（5-2-1），分别用超声焊接到三相DBC（6，7，8）直流端子处。
4.根据权利要求1所述的基于一种DBC布局的集成IGBT封装结构，其特征在于：所述框架（3）内部采用硅胶进行灌封。
5.根据权利要求1所述的基于一种DBC布局的集成IGBT封装结构，其特征在于：所述三相DBC结构（6，7，8）包括三块并联的DBC，框架上分别设置有信号端子引出端口和NTC温度传感器引出端口，单块的DBC上的IGBT栅极控制信号端、发射极控制信号端、NTC温度传感器键合到框架。
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