CN209537676U - A kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder - Google Patents
A kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder Download PDFInfo
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- CN209537676U CN209537676U CN201920241506.XU CN201920241506U CN209537676U CN 209537676 U CN209537676 U CN 209537676U CN 201920241506 U CN201920241506 U CN 201920241506U CN 209537676 U CN209537676 U CN 209537676U
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Abstract
A kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder, belong to growing silicon carbice crystals technical field, the utility model is poor in order to solve existing silicon carbide crystal growing device heat insulation effect, and electrical power consumed is excessively high, and can not precise measurement crucible various pieces temperature the problem of.Heat insulation module is provided in main body, the top of crucible lifting component is across the bottom of main body and heat insulation module and is suspended in heat insulation module, crucible is placed on the top of heat insulation module, heating component is mounted on the top of main body, and the output end of heating component is located at surrounding and the top of crucible, multiple measurement ends of temperature measurement component are located above and below the output end and crucible of heating component.The PVT method single-crystal growing apparatus of the accurate control resistance-type heating temperature ladder of one kind of the utility model can carry out Heat preservation to the crucible that growing silicon carbice crystals use, and can guarantee and control the real time temperature of crucible each section.
Description
Technical field
The utility model relates to a kind of single-crystal growing apparatus, and in particular to a kind of warm ladder of accurately control resistance-type heating
PVT method single-crystal growing apparatus, belongs to growing silicon carbice crystals technical field.
Background technique
Since natural content is very few, silicon carbide is mainly mostly artificial.Common method is to mix quartz sand with coke, benefit
With silica therein and petroleum coke, salt and sawdust is added, is placed in electric furnace, is heated to 2000 DEG C or so high temperature, passes through
Silicon carbide micro-powder is obtained after various chemical processes, during growing silicon carbice crystals, the temperature of crucible is most important, passes
System grower can not effectively keep the temperature crucible, and crucible external skin temperatures are sometimes hot and sometimes cold, and can not be to all directions of crucible
On hull-skin temperature carry out precise measurement.
Utility model content
The purpose of the utility model is to provide the accurate control resistance-types of one kind to heat the terraced PVT method single-crystal growing apparatus of temperature,
Poor to solve existing silicon carbide crystal growing device heat insulation effect, electrical power consumed is excessively high, and can not precise measurement crucible various pieces
The problem of temperature
It is a kind of it is accurate control resistance-type heating temperature ladder PVT method single-crystal growing apparatus include main body, crucible lifting component, temperature
Degree measurement component, heat insulation module and heating component；
Heat insulation module is provided in main body, the top of crucible lifting component is across the bottom of main body and heat insulation module and suspension
In heat insulation module, crucible is placed on the top of heat insulation module, and heating component is mounted on the top of main body, and heating component is defeated
Outlet is located at surrounding and the top of crucible, and multiple measurement ends of temperature measurement component are located at the output end and earthenware of heating component
Above and below crucible.
Preferred: crucible lifting component includes elevating lever and crucible platform, and elevating lever passes through in the bottom and main body of main body
Crucible platform be connected, the upper surface of crucible platform is provided with groove, and crucible is placed in groove.
Preferred: heating component includes electrode fixed frame, first electrode, second electrode, heater top, third electrode and side
Heater；
Electrode fixed frame is symmetrically mounted in the top inner wall of main body, and the first electricity is mounted on two electrode fixed frames
Pole is separately installed with second electrode and third electrode in two first electrodes, and heater top is horizontally arranged at the bottom of second electrode
End, and it is located at the top of crucible, side heater is vertically mounted on the bottom end of third electrode, and is located at the outside of crucible.
Preferred: it includes upper cover, suspension plate, side heater thermocouple, heater top thermocouple, crucible that temperature, which measures component,
Upper cover thermocouple, crucible bottom thermocouple, the first hanging bracket and the second hanging bracket；
Upper cover is mounted on the top of main body, and suspension plate is equipped on the inner wall of upper cover, and ecto-entad is successively right in suspension plate
Title is provided with the first hanging bracket and the second hanging bracket, and one end of side heater thermocouple is connected with suspension plate, the other end
The outside suspension of side heater is extended to, one end of heater top thermocouple is connected with suspension plate, and the other end extends to top and adds
The top of hot device suspends, and crucible upper cover thermocouple is slidably mounted on lid, and the other end is suspended at the top of crucible, crucible bottom
The installation of TC is in elevating lever, and the measurement end of crucible bottom thermocouple is contacted with the bottom of crucible.
Preferred: heat insulation module includes ring support, bottom insulating layer, bottom insulating layer buckle, side insulating layer, side insulating layer card
Button, closure insulation, closure insulation buckle and upper cover insulating layer；
Ring support is fixedly mounted on the bottom of main body, and the top of ring support is equipped with annular slab, the installation of bottom insulating layer
Annular slab inner annular edge and by by bottom insulating layer buckle fix, side insulating layer be mounted on the outer ring edge of annular slab and
It is buckled and is fixed by side insulating layer, closure insulation is fixedly mounted in the second hanging bracket by closure insulation buckle, and upper cover is protected
Warm layer is fixedly mounted in the first hanging bracket.
Preferred: heater top is mosquito-repellent incense-shaped tungsten heater.
Preferred: first electrode, second electrode and third electrode are tungsten electrode.
Preferred: bottom insulating layer, side insulating layer, closure insulation and upper cover insulating layer are sheet tungsten insulating layer.
The utility model has the effect that compared with existing product
1, the temperature of crucible outer surface can guarantee not by bottom insulating layer, side insulating layer, closure insulation and upper cover insulating layer
It can scatter and disappear, it is ensured that the stability of crucible temperature.
2, crucible can be heated by heater top and side heater, while is added by side heater thermocouple, top
Hot device thermocouple, crucible upper cover thermocouple and crucible bottom thermocouple can carry out temperature monitoring to the outer wall of crucible all directions.
3, the pick-and-place of mark crucible can be put by crucible lifting component, adjust the position of crucible in the device.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder；
Fig. 2 is the structural schematic diagram of heater top.
In figure: 1- main body, 2- elevating lever, 3- crucible platform, 4- upper cover, 5- suspension plate, the side 6- heater thermocouple, the top 7-
Heater thermocouple, 8- crucible upper cover thermocouple, 9- crucible bottom thermocouple, the first hanging bracket of 10-, the suspension branch of 11- second
Frame, 12- ring support, the bottom 13- insulating layer, the bottom 14- insulating layer buckle, the side 15- insulating layer, the side 16- insulating layer buckle, the top 17-
Insulating layer, 18- closure insulation buckle, 19- upper cover insulating layer, 20- electrode fixed frame, 21- first electrode, 22- second electrode,
23- heater top, 24- third electrode, the side 25- heater, 26- crucible.
Specific embodiment
The utility model preferred embodiment is elaborated below according to attached drawing.
As depicted in figs. 1 and 2, the PVT method monocrystalline of a kind of accurate control resistance-type heating temperature ladder described in the utility model
Grower includes main body 1, crucible lifting component, temperature measurement component, heat insulation module and heating component；
Heat insulation module is provided in main body 1, the top of crucible lifting component across the bottom of main body 1 and heat insulation module and hangs
It sets in heat insulation module, crucible 26 is placed on the top of heat insulation module, and heating component is mounted on the top of main body 1, and heating group
The output end of part is located at surrounding and the top of crucible 26, and multiple measurement ends of temperature measurement component are located at the defeated of heating component
Above and below outlet and crucible 26.
Further, crucible lifting component includes elevating lever 2 and crucible platform 3, elevating lever 2 passes through bottom and the master of main body 1
Crucible platform 3 in body 1 is connected, and the upper surface of crucible platform 3 is provided with groove, and crucible 26 is placed in groove；Elevating lever 2 can
It is gone up and down by realizations such as hydraulic cylinder or cylinders.
Further, heating component includes electrode fixed frame 20, first electrode 21, second electrode 22, heater top 23, third
Electrode 24 and side heater 25；
Electrode fixed frame 20 is symmetrically mounted in the top inner wall of main body 1, and is mounted on two electrode fixed frames 20
One electrode 21 is separately installed with second electrode 22 and third electrode 24 in two first electrodes 21, and heater top 23 is horizontally mounted
In the bottom end of second electrode 22, and it is located at the top of crucible 26, side heater 25 is vertically mounted on the bottom end of third electrode 24, and
Positioned at the outside of crucible 26.
Further, temperature measurement component include upper cover 4, suspension plate 5, side heater thermocouple 6, heater top thermocouple 7,
Crucible upper cover thermocouple 8, crucible bottom thermocouple 9, the first hanging bracket 10 and the second hanging bracket 11；
Upper cover 4 is mounted on the top of main body 1, and suspension plate 5 is equipped on the inner wall of upper cover 4, in suspension plate 5 ecto-entad according to
Sub-symmetry is provided with the first hanging bracket 10 and the second hanging bracket 11, and one end of side heater thermocouple 6 is connected with suspension plate 5
It connects, the other end extends to the outside suspension of side heater 25, and one end of heater top thermocouple 7 is connected with suspension plate 5, another
End extends to the top suspension of heater top 23, and crucible upper cover thermocouple 8 is slidably mounted in upper cover 4, and the other end is suspended at earthenware
The top of crucible 26, crucible bottom thermocouple 9 are mounted in elevating lever 2, and the measurement end of crucible bottom thermocouple 9 and crucible 26
Bottom contact；Crucible upper cover thermocouple 8 can be slidably mounted on upper lid by sliding-rail sliding；Wherein symmetrically arranged second suspension
It is not provided in 11 figure of bracket.
Further, heat insulation module includes ring support 12, bottom insulating layer 13, bottom insulating layer buckle 14, side insulating layer 15, side
Insulating layer buckle 16, closure insulation 17, closure insulation buckle 18 and upper cover insulating layer 19；
Ring support 12 is fixedly mounted on the bottom of main body 1, and the top of ring support 12 is equipped with annular slab, bottom insulating layer
13 are mounted on the inner annular edge of annular slab and are fixed by buckling 14 by bottom insulating layer, and side insulating layer 15 is mounted on annular slab
Outer ring edge and fixed by side insulating layer buckle 16, closure insulation 17 is fixedly mounted on second by closure insulation buckle 18 and hangs
On hanging bracket 11, upper cover insulating layer 19 is fixedly mounted in the first hanging bracket 10.
Further, heater top 23 is mosquito-repellent incense-shaped tungsten heater.
Further, first electrode 21, second electrode 22 and third electrode 24 are tungsten electrode.
Further, bottom insulating layer 13, side insulating layer 15, closure insulation 17 and upper cover insulating layer 19 are the heat preservation of sheet tungsten
Layer.
This embodiment is just an exemplary description of this patent, does not limit its protection scope, those skilled in the art
Member can also be changed its part, as long as it does not exceed the essence of this patent, within the protection scope of the present patent.
Claims (8)
1. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder, it is characterised in that: including main body (1), earthenware
Crucible lifting assembly, temperature measurement component, heat insulation module and heating component；
Heat insulation module is provided in the main body (1), the top of crucible lifting component passes through bottom and the heat insulation module of main body (1)
For rear-suspending in heat insulation module, crucible (26) is placed on the top of heat insulation module, and heating component is mounted on the top of main body (1),
And the output end of heating component is located at surrounding and the top of crucible (26), multiple measurement ends of temperature measurement component, which are located at, to be added
Above and below the output end and crucible (26) of hot component.
2. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder according to claim 1, feature
Be: the crucible lifting component includes elevating lever (2) and crucible platform (3), elevating lever (2) pass through the bottom of main body (1) with
Crucible platform (3) in main body (1) is connected, and the upper surface of crucible platform (3) is provided with groove, and crucible (26) is placed on groove
It is interior.
3. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder according to claim 2, feature
Be: the heating component includes electrode fixed frame (20), first electrode (21), second electrode (22), heater top (23),
Three electrodes (24) and side heater (25)；
The electrode fixed frame (20) is symmetrically mounted in the top inner wall of main body (1), pacifies on two electrode fixed frames (20)
Equipped with first electrode (21), second electrode (22) and third electrode (24) are separately installed on two first electrodes (21), top adds
Hot device (23) is horizontally arranged at the bottom end of second electrode (22), and is located at the top of crucible (26), and side heater (25) is vertically pacified
Mounted in the bottom end of third electrode (24), and it is located at the outside of crucible (26).
4. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder according to claim 3, feature
Be: the temperature measurement component includes upper cover (4), suspension plate (5), side heater thermocouple (6), heater top thermocouple
(7), crucible upper cover thermocouple (8), crucible bottom thermocouple (9), the first hanging bracket (10) and the second hanging bracket (11)；
The upper cover (4) is mounted on the top of main body (1), is equipped on the inner wall of upper cover (4) suspension plate (5), in suspension plate (5)
Ecto-entad is successively symmetrically arranged with the first hanging bracket (10) and the second hanging bracket (11), side heater thermocouple (6)
One end is connected with suspension plate (5), and the other end extends to the outside suspension of side heater (25), heater top thermocouple (7)
One end is connected with suspension plate (5), and the other end extends to the top suspension of heater top (23), and crucible upper cover thermocouple (8) is sliding
Dynamic to be mounted on upper cover (4), the other end is suspended at the top of crucible (26), and crucible bottom thermocouple (9) is mounted on elevating lever (2)
It is interior, and the measurement end of crucible bottom thermocouple (9) is contacted with the bottom of crucible (26).
5. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder according to claim 4, feature
Be: the heat insulation module includes ring support (12), bottom insulating layer (13), bottom insulating layer buckle (14), side insulating layer (15),
Side insulating layer buckles (16), closure insulation (17), closure insulation buckle (18) and upper cover insulating layer (19)；
The ring support (12) is fixedly mounted on the bottom of main body (1), and the top of ring support (12) is equipped with annular slab, bottom
Insulating layer (13) is mounted on the inner annular edge of annular slab and by fixed by bottom insulating layer buckle (14), side insulating layer (15) peace
Mounted in annular slab outer ring edge and by side insulating layer buckle (16) it is fixed, closure insulation (17) passes through closure insulation buckle
(18) it is fixedly mounted on the second hanging bracket (11), upper cover insulating layer (19) is fixedly mounted on the first hanging bracket (10).
6. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder according to claim 3, feature
Be: the heater top (23) is mosquito-repellent incense-shaped tungsten heater.
7. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder according to claim 3, feature
Be: the first electrode (21), second electrode (22) and third electrode (24) are tungsten electrode.
8. a kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder according to claim 5, feature
Be: the bottom insulating layer (13), side insulating layer (15), closure insulation (17) and upper cover insulating layer (19) are that sheet tungsten is protected
Warm layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920241506.XU CN209537676U (en) | 2019-02-26 | 2019-02-26 | A kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920241506.XU CN209537676U (en) | 2019-02-26 | 2019-02-26 | A kind of PVT method single-crystal growing apparatus of accurate control resistance-type heating temperature ladder |
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| CN209537676U true CN209537676U (en) | 2019-10-25 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111621844A (en) * | 2020-06-22 | 2020-09-04 | 哈尔滨化兴软控科技有限公司 | Rotary type double-temperature-zone PVT method high-quality single crystal preparation device and method |
| CN112898030A (en) * | 2021-02-04 | 2021-06-04 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Preparation method of thermocouple sheath for PVT (polyvinyl dichloride) high-temperature growth equipment |
| CN113235156A (en) * | 2021-04-22 | 2021-08-10 | 中科汇通(内蒙古)投资控股有限公司 | Silicon carbide single crystal growth device with temperature and component detection function |
| CN113970243A (en) * | 2021-10-14 | 2022-01-25 | 中国科学院沈阳科学仪器股份有限公司 | Thin-wall heat-insulating layer structure of beam source furnace |
-
2019
- 2019-02-26 CN CN201920241506.XU patent/CN209537676U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111621844A (en) * | 2020-06-22 | 2020-09-04 | 哈尔滨化兴软控科技有限公司 | Rotary type double-temperature-zone PVT method high-quality single crystal preparation device and method |
| CN112898030A (en) * | 2021-02-04 | 2021-06-04 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Preparation method of thermocouple sheath for PVT (polyvinyl dichloride) high-temperature growth equipment |
| CN113235156A (en) * | 2021-04-22 | 2021-08-10 | 中科汇通(内蒙古)投资控股有限公司 | Silicon carbide single crystal growth device with temperature and component detection function |
| CN113970243A (en) * | 2021-10-14 | 2022-01-25 | 中国科学院沈阳科学仪器股份有限公司 | Thin-wall heat-insulating layer structure of beam source furnace |
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