CN205934120U - Polycrystalline silicon ingot furnace for fritting - Google Patents
Polycrystalline silicon ingot furnace for fritting Download PDFInfo
- Publication number
- CN205934120U CN205934120U CN201620864913.2U CN201620864913U CN205934120U CN 205934120 U CN205934120 U CN 205934120U CN 201620864913 U CN201620864913 U CN 201620864913U CN 205934120 U CN205934120 U CN 205934120U
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- heater
- fritting
- crucible
- silicon ingot
- polycrystalline silicon
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Abstract
The utility model provides a pair of polycrystalline silicon ingot furnace for fritting, the induction cooker comprises a cooker bod, the crucible has been placed in the furnace body, the outside of crucible is provided with heating device, heating device places in 12 departments of furnace body. The utility model discloses a through improving the heating device in the furnace body, control the melting of silicon bulk bottom seed crystal of crucible bottom through changing thermal field in the furnace body. Furthermore, the utility model particularly relates to an improve the lateral part heater among the heating device. Further, through practice has proved, the bottom of lateral part heater and the distance between the crucible bottom guarantee at 16CM that the thermal field in the furnace body just can reach the process consideration of fritting so.
Description
Technical field
This utility model is related to solar battery casting ingot technical field, more particularly, to a kind of fritting polycrystalline silicon ingot or purifying furnace.
Background technology
Polycrystalline ingot furnace thermal field designs mainly for fine melt table at present, and the thermal field not being specifically designed for fritting table sets
Meter, requires less and less, the share in market for half process of smelting is increasing, half process of smelting however as market to silicon ingot crystalline substance flower
Major technique core is exactly the reservation of bottom seed crystal, current thermal field it cannot be guaranteed that in fusion process bottom solid-liquid face keep level
Uniform melt, it is proposed that crucible bottom is passed through with cooling gas lowering the temperature, but is passed through cooling gas by facts have proved
Effect is undesirable, does not reach demand of industrial production that is to say, that being also it cannot be guaranteed that melting by simply crucible is carried out with cooling
During change, solid-liquid face in bottom keeps horizontal homogeneous fusing.
Content of the invention
The purpose of this utility model is to provide a kind of fritting polycrystalline silicon ingot or purifying furnace, solves present in prior art
Due to heated uneven near the bottom seed crystal leading to fusing, and then have influence on the size of the brilliant flower in silicon ingot bottom.
The technical solution of the utility model is specific as follows：
A kind of fritting polycrystalline silicon ingot or purifying furnace, including body of heater, is placed with crucible, the outside of described crucible sets in described body of heater
It is equipped with heater, described heater is positioned at the 1/2 of body of heater.
Preferably, described heater includes being placed in the side heater of surrounding and the top being placed in crucible top outside crucible
Portion's heater.
Preferably, described side heater is positioned at the 1/2 of body of heater.
Preferably, the bottom of described side heater and the distance of crucible bottom are 16CM.
Preferably, it is further provided with dual power supply control system in described body of heater, described dual power supply control system includes two
Cover independent power cell control module, trigger board and transformator, wherein Power Control template passes through trigger board with transformator even
Connect.
Preferably, described transformator is connected with top heater and side heater respectively.
Preferably, described top heater and side heater are connected with electrode respectively.
Preferably, described crucible is placed on graphite coldplate, and the bottom of described graphite coldplate is provided with cooling tube.
Preferably, described heater is S bend pipe channel heater.
Preferably, it is further provided with heat-insulation cage in described body of heater, described heat-insulation cage is specifically positioned over crucible and heating dress
The outside put.
Compared with prior art, the beneficial effects of the utility model are：
A kind of fritting polycrystalline silicon ingot or purifying furnace that this utility model provides, including body of heater, is placed with crucible in described body of heater,
The outside of described crucible is provided with heater, and described heater is positioned at the 1/2 of body of heater.This utility model is by carrying
Heater in blast furnace body, by changing the fusing that the thermal field in body of heater controls the silicon ingot bottom seed crystal of crucible bottom.
Further, the side heater in heater is specifically improved by this utility model.
Further, by it was verified that the distance between bottom and the crucible bottom of side heater ensure in 16CM,
Thermal field so in body of heater just can reach the process conditions of fritting.
Brief description
The structural representation of the ingot furnace that Fig. 1 provides for this utility model；
Wherein, 1, crucible 2, side heater 3, top heater 4, cooling tube.
Specific embodiment
In conjunction with accompanying drawing, this utility model is further described：
This utility model is by having carried out Precise spraying to the thermal field in body of heater and bushing position, that is, in fusion process
Keep thermal field bottom and crucible bottom to have a certain distance, so avoid to lead to bottom seed crystal to melt not because heating too fast
Uniformly, and then affect the size of the brilliant flower in silicon ingot bottom.This distance by raising thermal field bottom and crucible bottom controls half
Molten process conditions in the art not yet it has been proposed that, existing simply by being lowered the temperature to the bottom of crucible or by body of heater
Interior heat sheds to change the process conditions of fritting.
A kind of fritting polycrystalline silicon ingot or purifying furnace that this utility model provides, including body of heater, is placed with crucible in described body of heater
1, described crucible 1 is positioned on graphite coldplate.It is provided with heater above described crucible 1, described heater is
It is placed in the side heater 2 of crucible 1 outside surrounding and the top heater 3 being placed in top.Wherein, described side heater 2 is put
At the 1/2 of body of heater.The bottom of described graphite coldplate is provided with cooling tube 4, described cooling tube 4 is passed through cooling gas to stone
The further cooling down of black coldplate.
Further, described side heater 2 is S bend pipe channel heater.
Further, the thermal field in described body of heater mainly pass through between the bottom of side heater 2 and crucible 1 bottom away from
From being changed, specifically, the distance between the bottom of side heater 2 and crucible 1 bottom are designed as 16cm.
Described body of heater further comprises the fix bar for fixing heater, and wherein, the two ends of side heater 2 are divided
It is not fixed on the lower end of fix bar by trip bolt.
It is further provided with heat-insulation cage in the outside of above-mentioned heater and crucible, described heat-insulation cage is rectangular body mechanism,
It is divided into six faces, be made up of the heat-insulation cage side plate of the activity of the heat-insulation cage top board, heat-insulation cage base plate and surrounding fixed up and down.Institute
The heat-insulation cage side plate upper end stating activity is connected with heat-insulation cage side plate described in heat-insulation cage enhancing screw by heat-insulation cage outer panel and heat-insulated
Cage interior plate forms, and described heat-insulation cage outer panel is made up of upper heat-insulation cage outer panel and lower heat-insulation cage outer panel；Described heat-insulation cage
Interior plate is made up of upper heat-insulation cage interior plate and lower heat-insulation cage interior plate.
When needing to adjust temperature, the movable part of heat-insulation cage can be lifted, now, upper heat-insulation cage interior plate, upper heat-insulation cage
Outer panel is promoted to certain altitude, and the bottom of heat-insulation cage movable part is larger with heat-insulation cage base plate connection gap, heat-insulation cage heat
Shedding from gap, now, then being passed through cooling gas to cooling tube so that forming larger upper and lower temperature difference in thermal field, you can ensure
Above in thermal field, temperature is high, following temperature is low.Thus can avoid having influence on silicon ingot bottom crystalline substance because temperature of thermal field is too high
The size of flower.
Additionally, described body of heater further comprises dual power supply control system, double power-supply system includes two sets of independent power
Unit control module, trigger board and transformator.Power cell control module is connected with transformator by trigger board, two sets of transformators
It is connected with top heater 3 and side heater 2 respectively, described trigger board is used for conducting and the pass on two lines road is separately controlled
Close.Top heater 3 and side heater 2 are all connected with respective electrode.Power cell control module can be wanted according to setting
Ask conducting and the shutoff that two lines road is separately controlled by trigger board, two lines road is loaded into after corresponding transformator respectively
In top heater 3 and side heater 2.Top heater 3 is that three electrodes control, and side heater 2 is three electrode controls
System, it is achieved thereby that the separate control system of top side heater.
Dual power supply controls advantage
1. more energy-conservation, dual power supply controls and can effectively reduce side heater length crystalline substance section heat time heating time, thus reaching
To the purpose reducing h eating power, the heat that in the minimizing unit interval simultaneously, cooling water is taken away, thus indirectly decrease power
The load of refrigeration plant.
2. preferably control thermal field, dual power supply control can easily be realized top side heater and separately heat, push up by adjusting
Side-line number controls the purpose of thermal field to reach.
3. crystal growth is improved, dual power supply control be conducive to ingot furnace be internally formed evenly vertical
Gradient, thus preferably control long crystalline substance speed so that long crystal boundary face is gentler, thus reducing the unfavorable factors such as shade, red sector.
4. mitigate main line current load load, dual power supply controls and can effectively reduce the superposition of main line electric current, thus
Reduce line load amount, have certain protective effect for bus, switchgear house.
5. extend internal thermal field service life, after growth section adjusts top side coefficient, reduce side heater for adjacent guarantor
The thermo-contact of warm plate, thus extend internal insulation plate thermal field service life.
Claims (10)
1. a kind of fritting polycrystalline silicon ingot or purifying furnace it is characterised in that：Including body of heater, in described body of heater, it is placed with crucible, described earthenware
The outside of crucible is provided with heater, and described heater is positioned at the 1/2 of body of heater.
2. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 1 it is characterised in that：Described heater includes putting
The side heater of surrounding and the top heater being placed in crucible top outside crucible.
3. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 2 it is characterised in that：Described side heater is placed
At the 1/2 of body of heater.
4. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 3 it is characterised in that：The bottom of described side heater
Portion is 16CM with the distance of crucible bottom.
5. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 2 it is characterised in that：Set further in described body of heater
Be equipped with dual power supply control system, described dual power supply control system include two sets of independent power cell control modules, trigger board and
Transformator, wherein Power Control template are connected with transformator by trigger board.
6. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 5 it is characterised in that：Described transformator respectively with top
Portion's heater and side heater connect.
7. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 6 it is characterised in that：Described top heater and side
Portion's heater is connected with electrode respectively.
8. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 1 it is characterised in that：It is cold that described crucible is placed in graphite
But, on plate, the bottom of described graphite coldplate is provided with cooling tube.
9. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 1 it is characterised in that：Described heater is S type
Pipeline heater.
10. a kind of fritting polycrystalline silicon ingot or purifying furnace according to claim 1 it is characterised in that：In described body of heater further
It is provided with heat-insulation cage, described heat-insulation cage is specifically positioned over the outside of crucible and heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620864913.2U CN205934120U (en) | 2016-08-10 | 2016-08-10 | Polycrystalline silicon ingot furnace for fritting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620864913.2U CN205934120U (en) | 2016-08-10 | 2016-08-10 | Polycrystalline silicon ingot furnace for fritting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205934120U true CN205934120U (en) | 2017-02-08 |
Family
ID=57923497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620864913.2U Active CN205934120U (en) | 2016-08-10 | 2016-08-10 | Polycrystalline silicon ingot furnace for fritting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205934120U (en) |
-
2016
- 2016-08-10 CN CN201620864913.2U patent/CN205934120U/en active Active
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |