CN209496871U - 一种存储器 - Google Patents
一种存储器 Download PDFInfo
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- CN209496871U CN209496871U CN201920514036.XU CN201920514036U CN209496871U CN 209496871 U CN209496871 U CN 209496871U CN 201920514036 U CN201920514036 U CN 201920514036U CN 209496871 U CN209496871 U CN 209496871U
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- 230000015654 memory Effects 0.000 title claims abstract description 55
- 238000007667 floating Methods 0.000 claims abstract description 93
- 238000002955 isolation Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000000926 separation method Methods 0.000 claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 4
- 230000005641 tunneling Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000011049 filling Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
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Priority Applications (1)
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CN201920514036.XU CN209496871U (zh) | 2019-04-16 | 2019-04-16 | 一种存储器 |
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CN201920514036.XU CN209496871U (zh) | 2019-04-16 | 2019-04-16 | 一种存储器 |
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CN209496871U true CN209496871U (zh) | 2019-10-15 |
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CN201920514036.XU Withdrawn - After Issue CN209496871U (zh) | 2019-04-16 | 2019-04-16 | 一种存储器 |
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CN (1) | CN209496871U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110021604A (zh) * | 2019-04-16 | 2019-07-16 | 上海格易电子有限公司 | 一种存储器及其制备方法 |
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2019
- 2019-04-16 CN CN201920514036.XU patent/CN209496871U/zh not_active Withdrawn - After Issue
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110021604A (zh) * | 2019-04-16 | 2019-07-16 | 上海格易电子有限公司 | 一种存储器及其制备方法 |
CN110021604B (zh) * | 2019-04-16 | 2023-12-01 | 上海格易电子有限公司 | 一种存储器及其制备方法 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
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CP01 | Change in the name or title of a patent holder |
Address after: 502 / 15, building 1, 498 GuoShouJing Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee after: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 502 / 15, building 1, 498 GuoShouJing Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee before: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
|
AV01 | Patent right actively abandoned | ||
AV01 | Patent right actively abandoned | ||
AV01 | Patent right actively abandoned |
Granted publication date: 20191015 Effective date of abandoning: 20231201 |
|
AV01 | Patent right actively abandoned |
Granted publication date: 20191015 Effective date of abandoning: 20231201 |