CN208684424U - Ellipse bar polysilicon - Google Patents
Ellipse bar polysilicon Download PDFInfo
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- CN208684424U CN208684424U CN201820530505.2U CN201820530505U CN208684424U CN 208684424 U CN208684424 U CN 208684424U CN 201820530505 U CN201820530505 U CN 201820530505U CN 208684424 U CN208684424 U CN 208684424U
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- polysilicon
- silicon core
- silicon
- ellipse
- ellipse bar
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Abstract
Ellipse bar polysilicon, including silicon core and the polysilicon body grown up to around silicon core.On the cross section of the ellipse bar polysilicon, polysilicon body formed substantially elliptical, silicon core then formed be centrally placed in substantially it is substantially rectangular in ellipse.Silicon wicking surface is long-pending and silicon core weight ratio is in 0.5cm2/ g to 1.8cm2Between/g.Polysilicon body on the cross section of the ellipse bar polysilicon is formed by substantially elliptical and silicon core is formed by substantially rectangular area ratio between 10 to 180.The ellipse bar polysilicon good physical performance of the utility model, is conducive to subsequent efficient transportation, and can produce in a more economical way.
Description
Technical field
The utility model relates in general to polysilicon product, more particularly to passes through solar energy obtained by reduction method using silicon core
Grade polysilicon product.
Background technique
Current polysilicon product is generally produced using reduction furnace, and rectangular or round (section) silicon core is usually utilized
Form polysilicon pole product.There are many defects for this polysilicon pole product, including CVD process is due to deposition surface curvature
Physical property caused by big is impaired, inconvenient following process, be unfavorable for efficient transportation and production efficiency it is not high brought by
Economic cost problem etc..
Patent application CN106167264A, CN106629737A, CN106698439A before applicant,
Though CN107055544A and CN206375678U etc. is improved from different aspect, but still does not well solve above-mentioned ask
Topic.
Some other patent application include CN202297149U, CN202625862U, CN105460939A,
CN107522205A etc. is conceived to silicon core self structure to improve to some extent, but properties of product and in terms of still
It is unsatisfactory.
Utility model content
The purpose of the utility model is to provide a kind of polysilicon products, can at least overcome above-mentioned certain or certain disadvantages.
According to the utility model, a kind of ellipse bar polycrystalline silicon rod is provided, including silicon core and the polycrystalline grown up to around silicon core
Silicon body,
Wherein on the cross section of the ellipse bar polysilicon, polysilicon body forms substantially elliptical, and silicon core is then formed substantially
It is centrally placed in substantially rectangular in ellipse;And
Wherein silicon wicking surface is long-pending and silicon core weight ratio is in 0.5cm2/ g to 1.8cm2Between/g, in the ellipse bar polysilicon
Cross section on polysilicon body be formed by substantially elliptical and silicon core be formed by substantially rectangular area ratio 10 to
Between 180.
Polycrystalline silicon rod product according to the present utility model, silicon wicking surface is long-pending and silicon core weight ratio is preferably in 1.0cm2/ g is extremely
1.5cm2Between/g, more preferably in 1.2cm2/ g to 1.3cm2Between/g.
Polycrystalline silicon rod product according to the present utility model, the polysilicon body institute shape on the cross section of the ellipse bar polysilicon
At substantially elliptical and silicon core be formed by substantially rectangular area ratio preferably between 20 to 140, more preferably 50 to
Between 80.
Polycrystalline silicon rod product according to the present utility model, the length-width-ratio of the rectangular cross section of silicon core preferably 1.1 to 6 it
Between, more preferably between 1.5-5, most preferably 2.
Polycrystalline silicon rod product according to the present utility model, silicon wicking surface roughness is preferably not less than 5 μm, more preferably not low
In 8 μm.
Polycrystalline silicon rod product according to the present utility model, the area of the cross section of silicon core and its length ratio preferably exist
0.45cm2/ cm to 30cm2Between/cm, more preferably in 3.6cm2/ cm to 24cm2Between/cm.
The utility model passes through the shape of both control silicon core and silicon rod product and effective growth of Unit Weight silicon core
Area etc. is obtained including ductility (having suitable ductility at 800 DEG C), density (2.3g/cm3Left and right), hardness (Mohs' hardness
7 or so) the excellent polycrystalline silicon rod product of physical properties such as, this ellipse bar polysilicon product be very beneficial for following process at
Solar generation component is very beneficial for efficiently using subsequent transport space, and increases space utilization rate in reduction furnace, from
And have also achieved energy-saving effect.
Detailed description of the invention
Fig. 1 is silicon core bridging structural schematic diagram according to the present utility model;
Fig. 2-4 is crossbeam (bridge) structural schematic diagram according to the utility model difference embodiment;
Fig. 5 is silicon core structure schematic diagram according to the present utility model;
Fig. 6 is the structural schematic diagram of polysilicon product according to the present utility model;And
Fig. 7 is the structural schematic diagram for the reduction furnace for schematically illustrating the polysilicon product of production the utility model.
Specific embodiment
The utility model is further detailed below by specific embodiment and attached drawing, but it is not
For limiting the utility model.
Fig. 1 shows the silicon core bridging structure of the utility model, including silicon core 10 and crossbeam (bridge part) 11.It can when production
Silicon core 10 to be arranged on chassis of reducing furnace 1 for example shown in Fig. 7.
As shown in figure 5,10 upper end of silicon core with rectangular cross section forms tip 101 to facilitate insertion detailed below
In mounting hole 110 set by 11 both ends of crossbeam of description.
Fig. 2 shows a kind of structures of crossbeam 11.Crossbeam 11 is rectangular sheet, can be by polysilicon, monocrystalline silicon or graphite
It is made Deng with cutting way, both ends respectively open up a mounting hole 110.Shown mounting hole 110 is again formed as rectangle.
Fig. 3 shows another structure of crossbeam 11.Unlike structure shown in Fig. 2, two 110 phases of rectangle mounting hole
It is mutually parallel and be obliquely installed.The neutral conductor (diagram inclined dashed line) of mounting hole 110 and crossbeam length direction (diagram horizontal dotted line)
Angle β is formed, angle β can be 0~90 degree, preferably 30~60 degree.Since the chassis of reduction furnace is usually designed to circle, it is
Close paving silicon core to improve furnace effect, also arrange in concentric circles usually on chassis 1 by silicon core, and mounting hole 110 is obliquely installed can be with
Silicon core 10 is set to have certain tilt angle when being mounted on crossbeam 11, so that silicon core 10 also tilts arrangement, thus more
Be conducive to Mi Pu with the more efficient space using reduction furnace.
Fig. 4 shows another structure of crossbeam 11.Unlike structure shown in Fig. 3, crossbeam 11 forms parallel four side
Shape, the long side of two rectangle mounting holes 110 are arranged with the short side of crossbeam 11 in parallel.This structure will make silicon rod more uniform
Ground growth.
The rectangular silicon core 10 of the utility model can also be made of polysilicon or monocrystalline silicon with cutting way, preferably by polycrystalline
Silicon cutting is made to reduce cost.As described later, the surface area of silicon core 10 and silicon core weight ratio are very crucial, need to control
0.5cm2/ g to 1.8cm2To improve product quality and promote efficiently production between/g.It is, for example, possible to use 15*8*1800mm rule
The cuboid silicon core of lattice, weight 496.8g;Or the cuboid silicon core using 200*100*3600mm specification, weight are
165600g。
In addition, the surface roughness of silicon core is also critically important, need to control to improve initial effective growth table not less than 5 μm
Face.
Fig. 7 diagrammatically illustrates the reduction furnace for producing polysilicon product comprising chassis 1, peep-hole 2, furnace body return
Water pipe 3, electrode 4, chassis upper hose 5, feed pipe 6, tail gas mouth 7, furnace body upper hose 8 and bell jar 9.For brevity, herein
It is not described in detail the structure and working principle of this reduction furnace, and the patent application before introducing applicant in a manner of
CN107758671A。
For the sake of clarity, Fig. 7, which is illustrated only, is arranged in the One On The Chassis two silicon cores 10 and crossbeam 11 is omitted.It is real
When border produces, crossbeam 11 is overlapped on chassis 1 after close paving silicon core 10 two-by-two again, control silicon core in reduction furnace burner hearth effective unit volume
Area is grown in 0.005cm2/cm3To 0.060cm2/cm3Between;And it controls and is finally grown in reduction furnace burner hearth effective unit volume
At oval silicon rod surface area in 0.08cm2/cm3To 0.30cm2/cm3Between.With reduction furnace burner hearth direct tube section diameter
2200mm, height 3300mm, effective volume 12158080cm3For, it, can be close using the silicon core structure of the utility model
It spreads to the silicon core 10 of 42 pairs of 3200mm*100mm*40mm specifications, and overlaps the crossbeam of 42 250mm*100mm*40mm specifications
11;Operation 45 hours, the 6th hour logical TCS doses are 4000Kg/h;Finally grow up to the ellipse of 3300mm*150mm*90mm specification
The crossbeam product of silicon rod product and 250mm*150mm*90mm specification, yield 7000Kg.Control above-mentioned two parameter --- also
The surface area of silicon core growth area and the oval silicon rod finally grown up to is extremely important in former furnace burner hearth effective unit volume, can
So that the average deposition speed in production process is up to 100kg/h or so, the 40kg/h for being significantly higher than traditional processing technology is left
Right deposition velocity, to reach energy-saving production effect.
Fig. 6 shows the cross section of the polysilicon ellipse rod product of the utility model comprising rectangular silicon core 10 and at it
On the oval polysilicon body 20 that grows up to.By above-mentioned production technology, the utility model can will be in the polycrystalline silicon rod product
Polysilicon body 20 on cross section is formed by substantially elliptical and silicon core 10 is formed by substantially rectangular area ratio and controls
Between 10 to 180.This polysilicon ellipse rod product has the advantages that
1) deposition is effectively reduced while increasing depositional area by the specially designed rectangular silicon core of the utility model
Ply stress, so as to improve the physical property of polysilicon product;
2) it is conducive to following process into high-efficiency solar electrical generation components from reduction furnace polysilicon ellipse bar directly obtained;
3) the stacking density that can increase the confined space, is conducive to subsequent efficient transportation;And
4) space utilization rate in reduction furnace is increased, has been achieved the effect that energy-saving.
Claims (10)
1. a kind of ellipse bar polysilicon, including silicon core and the polysilicon body grown up to around silicon core, it is characterised in that:
On the cross section of the ellipse bar polysilicon, polysilicon body forms substantially elliptical, and silicon core is then formed to be centrally placed in substantially
It is substantially rectangular in ellipse;And
Silicon wicking surface is long-pending and silicon core weight ratio is in 0.5cm2/ g to 1.8cm2Between/g, in the cross section of the ellipse bar polysilicon
On polysilicon body be formed by substantially elliptical and silicon core is formed by substantially rectangular area ratio between 10 to 180.
2. ellipse bar polysilicon according to claim 1, it is characterised in that: silicon wicking surface is long-pending to exist with silicon core weight ratio
1.0cm2/ g to 1.5cm2Between/g.
3. ellipse bar polysilicon according to claim 2, it is characterised in that: silicon wicking surface is long-pending to exist with silicon core weight ratio
1.2cm2/ g to 1.3cm2Between/g.
4. ellipse bar polysilicon according to claim 1, it is characterised in that: the polycrystalline on the cross section of ellipse bar polysilicon
Silicon body is formed by substantially elliptical and silicon core is formed by substantially rectangular area ratio between 20 to 140.
5. ellipse bar polysilicon according to claim 4, it is characterised in that: the polycrystalline on the cross section of ellipse bar polysilicon
Silicon body is formed by substantially elliptical and silicon core is formed by substantially rectangular area ratio between 50 to 80.
6. ellipse bar polysilicon according to claim 1, it is characterised in that: the length-width-ratio of the rectangular cross section of silicon core exists
Between 1.1 to 6.
7. ellipse bar polysilicon according to claim 6, it is characterised in that: the length-width-ratio of the rectangular cross section of silicon core exists
Between 1.5 to 5.
8. ellipse bar polysilicon according to claim 1, it is characterised in that: silicon wicking surface roughness is not less than 5 μm.
9. ellipse bar polysilicon according to claim 1, it is characterised in that: the area of the cross section of silicon core and its length it
Than in 0.45cm2/ cm to 30cm2Between/cm.
10. ellipse bar polysilicon according to claim 9, it is characterised in that: the area of the cross section of silicon core and its length
The ratio between in 3.6cm2/ cm to 24cm2Between/cm.
Priority Applications (1)
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CN201820530505.2U CN208684424U (en) | 2018-04-16 | 2018-04-16 | Ellipse bar polysilicon |
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CN201820530505.2U CN208684424U (en) | 2018-04-16 | 2018-04-16 | Ellipse bar polysilicon |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110386605A (en) * | 2018-04-16 | 2019-10-29 | 内蒙古盾安光伏科技有限公司 | Solar-grade polysilicon product and its production method |
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2018
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110386605A (en) * | 2018-04-16 | 2019-10-29 | 内蒙古盾安光伏科技有限公司 | Solar-grade polysilicon product and its production method |
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TR01 | Transfer of patent right |
Effective date of registration: 20201118 Address after: 015500 southeast of the intersection of jingsan road and Weisi Road, Qingshan Industrial Park, wulatehouqi, Bayannur City, Inner Mongolia Autonomous Region Patentee after: Bayannur concentrated Silicon Industry Co., Ltd Address before: 015543 the Inner Mongolia Autonomous Region Bayannaoer wulatehouqi Qingshan Industrial Park Patentee before: INNER MONGOLIA DUN'AN PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right |