CN206396357U - The heater lifted for silicon wafer horizontal - Google Patents
The heater lifted for silicon wafer horizontal Download PDFInfo
- Publication number
- CN206396357U CN206396357U CN201621403764.6U CN201621403764U CN206396357U CN 206396357 U CN206396357 U CN 206396357U CN 201621403764 U CN201621403764 U CN 201621403764U CN 206396357 U CN206396357 U CN 206396357U
- Authority
- CN
- China
- Prior art keywords
- heating
- electrode
- temperature
- graphite
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model is related to a kind of heater lifted for silicon wafer horizontal, it is characterized in that, including crucible and control system, the crucible is interior to form fusion zone, liquid phase region and crystal region, the bottom of the fusion zone and liquid phase region is communicated, and the crystal region is communicated with liquid phase region；Solution temperature-controlling system is provided with crucible, for controlling silicon grain silicon solution basal temperature in the fusing and liquid phase region in fusion zone；It is provided with pincers pot for crystallizing temperature-controlling system, for controlling the required thermograde of silicon chip crystallization；Control system is connected with solution temperature-controlling system and crystallization temperature-controlling system respectively.Heater is easy to use, controls thermograde accurate, stable, level lifting of the realization to silicon chip.
Description
Technical field
The utility model is related to silicon chip manufacturing technology field, more particularly to a kind of heating dress lifted for silicon wafer horizontal
Put.
Background technology
Solar energy is a kind of cleaning, efficiently and the never new energy of exhaustion, photovoltaic generation have safe and reliable, noiseless,
It is pollution-free, restrict less, low fault rate, easy maintenance the advantages of.Crystal silicon battery is the main product of solar cell.Photovoltaic industry institute
Silicon chip is obtained by cutting silicon ingot.Traditional wire cutting mode high energy consumption, spillage of material are big, and with certain dirty
Dye.In order to reduce the production cost of silicon chip, there is research display directly to produce silicon chip from molten silicon, mainly there are two kinds at present
Basic band silicon preparation method, one kind is vertical method of pulling up, and such as deckle feeds film（EFG）Band silicon technology, line drawstring silicon technology
（SR）, complicated and confused web dress band silicon technology（D-Web）Deng one kind is horizontal method of pulling up, mainly includes HRG bands silicon growth technology, RGS
Backing tape silicon growth method etc..Most of band silicon technology is under test at present.Silicon chip is manufactured using horizontal method of pulling up, it is closed
One of key technology is the formation and control of thermograde.
Utility model content
The technical problems to be solved in the utility model is：The deficiencies in the prior art are overcome to be used for silicon wafer horizontal there is provided one kind
The heater of lifting, solves the defect of conventional silicon chip processing inconvenience.
The utility model solves the technical scheme that its technical problem used：A kind of heating lifted for silicon wafer horizontal
Device, including crucible and control system, form fusion zone, liquid phase region and crystal region in the crucible, the fusion zone and
The bottom of liquid phase region is communicated, and the crystal region is communicated with liquid phase region；
Solution temperature-controlling system is provided with the crucible, for controlling fusing and liquid phase region of the silicon grain in fusion zone
Interior silicon solution basal temperature；
It is provided with the pincers pot for crystallizing temperature-controlling system, for controlling the required thermograde of silicon chip crystallization；
The control system is connected with solution temperature-controlling system and crystallization temperature-controlling system respectively.
Further, described solution temperature-controlling system include at least one graphite heating rod, the first infrared detection head and
Second infrared detection head, each graphite heating rod, the first infrared detection head and the second infrared detection head are respectively with control
System connection；
In the fusion zone and liquid phase region of stretching into crucible of the graphite heating rod；It is provided with the graphite heating rod some
Sawtooth density in individual sawtooth, the fusion zone on graphite heating rod is more than the sawtooth density in liquid phase region on graphite heating rod；
First infrared detection head is arranged on the crucible of fusion zone bottom, for detecting the temperature in fusion zone；Institute
State the second infrared detection head to be arranged on the crucible of liquid phase region bottom, for detecting the temperature in liquid phase region.
Further, described graphite heating rod is hollow-core construction, and grooving is offered in the centre of graphite heating rod, described
Grooving is set along graphite heating rod length direction.
Further, described crystallization temperature-controlling system includes graphite heating plate, high temperature CCD probe and multigroup heating electricity
Pole；
Described graphite heating plate is fixedly installed on the crucible below crystal region；
High temperature CCD probe is fixedly installed and is located at the top of crystal region, the temperature for detecting whole silicon chip crystal region
Gradient；
Each group heating electrode is fixedly installed on the bottom of graphite heating plate, and each group heats electrode along graphite heating plate length side
It is distributed to equidistant arrangement；Each group heating electrode is connected with control system respectively.
Further, in every group of heating electrode, heated based on the heating electrode at two ends between electrode, two main heating electrodes
For auxiliary heating electrode；
Described control system controls each group to heat the heating power of the main heating electrode in electrode by PWM, makes each group
Heat heating power of the electrode in crystal region direction from inside to outside more and more lower, form a thermograde；
Described control system controls each group to heat in the heating power that auxiliary in electrode heats electrode, every group by PWM
Auxiliary heating electrode be used for aiding in main heating electrode so that this group of heating-up temperature balance.
Further, open up fluted on the graphite heating plate between two adjacent groups heating electrode, opened up in the groove
There are multiple through holes, each through hole is located between two neighboring heating electrode.
Further, felt pad and insulation graphite felt are provided between two adjacent groups heating electrode, the felt pad is set
In groove.
Further, the bottom of the graphite heating plate is distributed with 4 groups of heating electrodes, every group of heating electrode from inside to outside
Including 4 heating electrodes, electrode is heated based on two heating motors in outside, two middle heating motors are auxiliary heating electricity
Pole.
Further, the quantity of the graphite heating rod is 2.
Further, the crucible bottom is used for the wall thickness for installing the region of infrared detection head less than 2mm.
The beneficial effects of the utility model are：Heater is easy to use, thermograde is controlled precisely, stable,
Realize and the level of silicon chip is lifted.
Brief description of the drawings
The utility model is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is the schematic diagram of the utility model heater；
Fig. 2 is the schematic diagram of graphite heating rod；
Fig. 3 is the graphite heating plate schematic diagram for installing heating electrode；
Wherein, 1, crucible, 2, graphite heating rod, the 31, first infrared detection head, the 32, second infrared detection head, 4, graphite adds
Hot plate, 41, groove, 5, high temperature CCD probe, 6, heating electrode, 61, main heating electrode, 62, auxiliary heating electrode, 7, felt pad,
8th, it is incubated graphite felt.
Embodiment
The utility model is further described presently in connection with specific embodiment.These accompanying drawings are simplified schematic diagram
Only illustrate basic structure of the present utility model in a schematic way, therefore it only shows the composition relevant with the utility model.
As shown in Figure 1 to Figure 3, a kind of heater lifted for silicon wafer horizontal, including crucible 1 and control system,
The bottom of formation fusion zone, liquid phase region and crystal region in crucible 1, fusion zone and liquid phase region is communicated, crystal region and liquid phase region phase
It is logical.
Solution temperature-controlling system is provided with crucible 1, for controlling silicon grain in the fusing and liquid phase region in fusion zone
Silicon solution basal temperature；It is provided with pincers pot for crystallizing temperature-controlling system, for controlling the required thermograde of silicon chip crystallization；
Control system is connected with solution temperature-controlling system and crystallization temperature-controlling system respectively.
Solution temperature-controlling system includes at least one graphite heating rod 2, the first infrared detection head 31 and the second infrared acquisition
First 32, in the present embodiment, the quantity of graphite heating rod 2 is 2,2 graphite heating rods 2, the first infrared detection head 31 and the
Two infrared detection heads 32 are connected with control system respectively.
Graphite heating rod 2 is stretched into the fusion zone and liquid phase region of crucible 1；Several saws are provided with graphite heating rod 2
Sawtooth density in tooth, fusion zone on graphite heating rod 2 is more than the sawtooth density in liquid phase region on graphite heating rod 2；Pass through saw
The density content of tooth controls the ratio of heating power, heating rod during the making just between control two parts sawtooth it is close
Degree, so that heating rod operationally obtains required operating temperature.
Heating rod is different according to the density of sawtooth, is divided into two parts, silicon material is melted in high-power part heating and melting area
Change, state of the silicon liquid temperature stabilization that the low part controlling stream of power comes in an a little higher than crystallization temperature.
Graphite heating rod 2 is hollow-core construction, offers grooving in the centre of graphite heating rod 2, and grooving is along graphite heating rod 2
Length direction is set.The resistance and power of heating rod can so be increased.
First infrared detection head 31 is arranged on the crucible 1 of fusion zone bottom, for detecting the temperature in fusion zone；Second
Infrared detection head 32 is arranged on the crucible 1 of liquid phase region bottom, for detecting the temperature in liquid phase region.To ensure measurement temperature essence
Standard, the wall thickness that the bottom of crucible 1 is used to install the region of infrared detection head is less than 2mm.
Control system understands silicon liquid temperature in fusion zone and liquid phase region according to two infrared detection heads, and according to the temperature of understanding
Degree controls the heating power of each heating rod, and then controls heating-up temperature.
Crystallizing temperature-controlling system includes graphite heating plate 4, high temperature CCD probe 5 and multigroup heating electrode 6；Graphite heating plate 4
It is fixedly installed on the crucible 1 below crystal region；High temperature CCD probe 5 is fixedly installed and positioned at the top of crystal region, for detecting
The thermograde of whole silicon chip crystal region；Each group heating electrode 6 is fixedly installed on the bottom of graphite heating plate 4, each group heating
Electrode 6 is distributed along the length direction equidistant arrangement of graphite heating plate 4；Each group heating electrode 6 is connected with control system respectively.
In every group of heating electrode 6, heated based on the heating electrode 6 at two ends between electrode 61, two main heating electrodes 61
For auxiliary heating electrode 62；Control system controls each group to heat the heating power of the main heating electrode 61 in electrode by PWM, makes
It is more and more lower that each group heats heating power of the electrode 6 in crystal region direction from inside to outside, forms a thermograde；Control system
Control each group to heat the auxiliary heating electrode 62 in the heating power that auxiliary in electrode 6 heats electrode 62, every group by PWM to be used for
The main heating electrode 61 of auxiliary is so that this group of heating-up temperature balance.
Opened up on graphite heating plate 4 between two adjacent groups heating electrode 6 and multiple lead to is offered in fluted 41, groove 41
Hole, each through hole is located between two neighboring heating electrode 6.So it is mainly designed to adjust the distribution of resistance of whole heating plate,
So as to control to heat the power distribution of each several part when electrode 6 is powered.Felt pad 7 is provided between two adjacent groups heating electrode 6
With insulation graphite felt 8, felt pad 7 is arranged in groove 41.
In the present embodiment, 4 groups of heating electrodes 6, every group of heating electrode 6 are distributed with the bottom of graphite heating plate 4 from inside to outside
Include 4 heating electrodes 6, electrode 61 is heated based on two heating motors in outside, two middle heating motors are auxiliary
Heat electrode 62.
During work, the silicon material of particle is heated to by quartz ampoule in the melt zone of the right part of graphite crucible 1, melt zone first
Graphite heating rod 2 to silicon material carry out heating melt it, the first infrared probe measurement fusion zone in silicon liquid temperature, after thawing
Graphite heating rod 2 in the liquid phase region of the left part of crucible 1, liquid phase region is flowed to by the passage of bottom to enter the silicon liquid temperature in liquid phase region
Row is maintained, and the silicon liquid temperature of liquid phase region is measured by the second infrared probe of bottom, and in order to ensure that temperature survey is accurate, temperature is surveyed
It is very thin that the crucible 1 of amount point is processed, only 2mm thickness, and control system strictly controls the temperature of liquid phase region, fusion zone
Precalculate and test with the temperature distribution of liquid phase region, distributed by the sawtooth density content of heating rod.
Crystal region is flowed to after the silicon liquid arrival of liquid phase region is a certain amount of, by silicon chip seeding, silicon chip is formed in crystal region.Silicon chip
By servo control mechanism, while crystallization generation, on one side steady lifting.The high-temperature infrared CCD that the temperature control of crystal region passes through top
Pop one's head in measure, monitor the Temperature Distribution in each region, controlled by the main heating motor of 4 groups outside the bottom both sides of heating plate
Thermograde processed, along crystal region length direction, heating power is less and less from the inside to surface, and mode of heating is controlled by PWM
's；Due to different with the radiating on both sides in the middle of crystal region, in order to ensure that the temperature of crystal region width is uniform, 8 are added
The main heating electrode 61 of auxiliary 62,8, electrode of heating for equalized temperature is supported the use, and main heating electrode 61 and auxiliary are heated
Power supply used in electrode 62 is separate, so can simultaneously use, be overlapped mutually with 4 groups of heating electrodes 6, mutually not shadow
Ring.
Whole heating plate divide into four big parts by different grooves 41 and through hole, reduce resistance each other
Distribution influence, while connect together again, can play conductive force, make Temperature Distribution relatively uniform.
Using it is above-mentioned according to desirable embodiment of the present utility model as enlightenment, pass through above-mentioned description, related work people
Member can carry out various changes and amendments in the range of without departing from this utility model technological thought completely.This reality
The content on specification is not limited to new technical scope, it is necessary to its technology is determined according to right
Property scope.
Claims (10)
1. a kind of heater lifted for silicon wafer horizontal, it is characterized in that, including crucible（1）And control system, the earthenware
Crucible（1）Interior formation fusion zone, liquid phase region and crystal region, the bottom of the fusion zone and liquid phase region are communicated, the crystal region with
Liquid phase region is communicated；
The crucible（1）On be provided with solution temperature-controlling system, for controlling fusing and liquid phase region of the silicon grain in fusion zone
Interior silicon solution basal temperature；
It is provided with the crucible for crystallizing temperature-controlling system, for controlling the required thermograde of silicon chip crystallization；
The control system is connected with solution temperature-controlling system and crystallization temperature-controlling system respectively.
2. the heater according to claim 1 lifted for silicon wafer horizontal, it is characterized in that, described solution temperature control system
System includes at least one graphite heating rod（2）, the first infrared detection head（31）And second infrared detection head（32）, each stone
Black heating rod（2）, the first infrared detection head（31）And second infrared detection head（32）It is connected respectively with control system；
The graphite heating rod（2）Stretch into crucible（1）Fusion zone and liquid phase region in；The graphite heating rod（2）It is upper to set
There is graphite heating rod in several sawtooth, the fusion zone（2）On sawtooth density be more than liquid phase region in graphite heating rod（2）On
Sawtooth density；
First infrared detection head（31）It is arranged on the crucible of fusion zone bottom（1）On, for detecting the temperature in fusion zone；
Second infrared detection head（32）It is arranged on the crucible of liquid phase region bottom（1）On, for detecting the temperature in liquid phase region.
3. the heater according to claim 2 lifted for silicon wafer horizontal, it is characterized in that, described graphite heating rod
（2）For hollow-core construction, in graphite heating rod（2）Centre offer grooving, the grooving is along graphite heating rod（2）Length direction
Set.
4. the heater according to claim 1 lifted for silicon wafer horizontal, it is characterized in that, described crystallization temperature control system
System includes graphite heating plate（4）, high temperature CCD probe（5）And multigroup heating electrode（6）；
Described graphite heating plate（4）It is fixedly installed on the crucible below crystal region（1）On；
High temperature CCD probe（5）The top of crystal region is fixedly installed and is located at, the temperature ladder for detecting whole silicon chip crystal region
Degree；
Each group heats electrode（6）It is fixedly installed on graphite heating plate（4）Bottom, each group heating electrode（6）Along graphite heating plate
（4）Length direction equidistant arrangement is distributed；Each group heats electrode（6）It is connected respectively with control system.
5. the heater according to claim 4 lifted for silicon wafer horizontal, it is characterized in that, every group of heating electrode（6）
In, the heating electrode at two ends（6）Based on heat electrode（61）, two main heating electrodes（61）Between for auxiliary heating electrode
（62）；
Described control system controls each group to heat electrode by PWM（6）In main heating electrode（61）Heating power, make each
Group heating electrode（6）Heating power in crystal region direction from inside to outside is more and more lower, forms a thermograde；
Described control system controls each group to heat electrode by PWM（6）Middle auxiliary heating electrode（62）Heating power, every group
In auxiliary heating electrode（62）For aiding in main heating electrode（61）So that this group of heating-up temperature balance.
6. the heater according to claim 4 lifted for silicon wafer horizontal, it is characterized in that, two adjacent groups heating electrode
（6）Between graphite heating plate（4）On open up fluted（41）, the groove（41）Inside offer multiple through holes, each through hole position
In two neighboring heating electrode（6）Between.
7. the heater according to claim 6 lifted for silicon wafer horizontal, it is characterized in that, two adjacent groups heating electrode
（6）Between be provided with felt pad（7）With insulation graphite felt（8）, the felt pad（7）It is arranged on groove（41）It is interior.
8. the heater according to claim 4 lifted for silicon wafer horizontal, it is characterized in that, the graphite heating plate
（4）Bottom 4 groups of heating electrodes are distributed with from inside to outside（6）, every group of heating electrode（6）Include 4 heating electrodes（6）, outside
Electrode is heated based on two heating motors of side（61）, two middle heating motors are auxiliary heating electrode（62）.
9. the heater according to claim 2 lifted for silicon wafer horizontal, it is characterized in that, the graphite heating rod
（2）Quantity be 2.
10. the heater according to claim 2 lifted for silicon wafer horizontal, it is characterized in that, the crucible（1）Bottom
The wall thickness in the region for installing infrared detection head is less than 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621403764.6U CN206396357U (en) | 2016-12-20 | 2016-12-20 | The heater lifted for silicon wafer horizontal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621403764.6U CN206396357U (en) | 2016-12-20 | 2016-12-20 | The heater lifted for silicon wafer horizontal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206396357U true CN206396357U (en) | 2017-08-11 |
Family
ID=59511648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621403764.6U Expired - Fee Related CN206396357U (en) | 2016-12-20 | 2016-12-20 | The heater lifted for silicon wafer horizontal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206396357U (en) |
-
2016
- 2016-12-20 CN CN201621403764.6U patent/CN206396357U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101311332B (en) | Crystal region temperature gradient regulator and Bridgman-Stockbarge method single crystal growth device | |
| CN104651934B (en) | A kind of energy-saving sapphire crystal growing furnace | |
| CN102162125B (en) | Thermal field structure of polysilicon ingot casting furnace | |
| EP3760767A1 (en) | Ingot furnace for directional solidification growth of crystalline silicon and application | |
| CN102108544A (en) | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN102936748B (en) | A kind of well heater of ingot furnace | |
| CN101851782A (en) | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace | |
| CN106521622A (en) | Heating device for horizontal pulling of silicon wafers | |
| CN104372407B (en) | A kind of crystalline silicon directional solidification growth equipment and method | |
| CN104357906A (en) | Multi-crucible three-dimensional sapphire single crystal growing device | |
| CN101532172A (en) | Thermal device for growing silicon monocrystal | |
| CN206396357U (en) | The heater lifted for silicon wafer horizontal | |
| CN102433585B (en) | Thermal field structure of quasi-monocrystal ingot furnace | |
| CN105951169B (en) | A kind of big gradient visualization tubular type monocrystal growing furnace | |
| Zhang et al. | Influence of temperature gradient at interface on defect multiplication in seed-assisted multicrystalline silicon | |
| CN202730297U (en) | Czochralski method single crystal furnace thermal field structure | |
| CN202380119U (en) | Heat-insulating cage device of pseudo-single crystal silicon ingot furnace | |
| CN101525765B (en) | Thermal field of silicon single crystal growth | |
| CN201395647Y (en) | Heat apparatus for growing silicon single crystal | |
| CN207376139U (en) | Orient the energy-saving and high efficient polycrystalline silicon ingot or purifying furnace of water-cooling | |
| CN206768277U (en) | A kind of side heater for polycrystalline ingot furnace | |
| CN202755096U (en) | Heat insulation device for ingot furnace | |
| CN103696002A (en) | Electromagnetic and resistance mixed heating thermal field structure of ingot furnace and using method of electromagnetic and resistance mixed heating thermal field structure | |
| CN106521623A (en) | Thermal field structure of horizontal pulling forming equipment for silicon wafers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170811 Termination date: 20181220 |