CN206312938U - A kind of high-power flip LED light source - Google Patents
A kind of high-power flip LED light source Download PDFInfo
- Publication number
- CN206312938U CN206312938U CN201621456319.6U CN201621456319U CN206312938U CN 206312938 U CN206312938 U CN 206312938U CN 201621456319 U CN201621456319 U CN 201621456319U CN 206312938 U CN206312938 U CN 206312938U
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- China
- Prior art keywords
- electrode
- radiating block
- radiating
- flip led
- light source
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Abstract
The utility model is related to LED chip encapsulation field, disclose a kind of high-power flip LED light source, including substrate and setting flip LED chips on the substrate, the flip LED chips include P electrode and N electrode, circuit layer is provided between the substrate and the flip LED chips, the circuit layer is provided with the first radiating block and the second radiating block, the P electrode and N electrode of the flip LED chips are connected with the first radiating block and the second radiating block on the circuit layer respectively, and the contact surface of first radiating block and the second radiating block is evenly arranged radiating groove.A kind of high-power flip LED light source that the utility model is provided, by setting boss, expands the service life that area of dissipation extends chip；Meanwhile, radiating groove is set with radiating block weld in P electrode and N electrode, contact area is increased, the electric current at P electrode and N electrode is not piled up generation accumulated heat, make LED chip light extraction more uniform.
Description
Technical field
The utility model is related to LED chip encapsulation field, more particularly to a kind of high-power flip LED light source.
Background technology
Semiconductor light-emitting-diode LED is a kind of novel solid luminescent device, and since birth, it is with power saving, life-span
The intrinsic characteristic such as length, environmental protection, vibration resistance, fast response time, is widely used in indicator lamp, signal lamp, display screen, landscape
The fields such as illumination, but due to luminance difference, influence all the time its application to the efficient lighting source market expansion, study carefully its original be by
Substantial amounts of heat can be released during work in LED, and with the raising of power, the heat meeting sharp increase of releasing makes
Tube core junction temperature rises rapidly, and thermal resistance becomes big, so as to have influence on the performance of device, especially for high-power LED light source, even more
In this way, thus for LED devices, it is most important with junction temperature scientifically to reduce thermal resistance by radiating, therefore, people sound out
Various means, but effect is undesirable, and the nowadays radiating of LED has turned into one and has hindered the important technology of its application extension difficult
Topic.
LED chips, its encapsulating material of radiating also not only with selection is relevant, also and chip and encapsulating material engagement
Face size is relevant.The LED chips of upside-down mounting, N poles carry the main radiating task of LED chip, but present LED cores
The affixed LED chips N poles of substrate of piece flip-chip packaged and the Copper Foil size of P poles do not design but with LED chips
This feature is adapted, and causes LED chip coolings to be obstructed, and due radiating effect is not reached also.And in the P electricity of LED chip
Near pole and N electrode, heat is largely concentrated, herein with greater need for big area of dissipation.
The content of the invention
The utility model is directed to disadvantages mentioned above of the prior art, there is provided a kind of high-power flip LED chips, contact surface
Product is big, and area of dissipation is big, and the heat dissipation problem of high-power flip LED is solved well.
In order to solve the above-mentioned technical problem, the utility model is addressed by following technical proposals：
A kind of high-power flip LED light source, including substrate and flip LED chips on the substrate are set, it is described fall
Dress LED chip includes P electrode and N electrode, and circuit layer, the circuit layer are provided between the substrate and the flip LED chips
Be provided with the first radiating block and the second radiating block, the P electrode and N electrode of the flip LED chips respectively with the circuit layer on
The first radiating block and the connection of the second radiating block, the even arrangement radiating of the contact surface that is connected with P electrode on first radiating block
Groove, the contact surface being connected with N electrode on second radiating block is evenly arranged radiating groove, the surface area of first radiating block
It is 1 with the surface area ratio of the second radiating block:2-1:3.
In the LED chips of upside-down mounting, N electrode carries the main radiating task of LED chips, therefore will be with N electrode
The surface area in the noncontact face of the second radiating block of upper welding is set to six times of the surface area of the first radiating block, rationally increases second
The non-contact area of radiating block side, expands area of dissipation.
Preferably, first radiating block and the second radiating block noncontact face coating conductive silver glue, the conductive silver glue
Thickness be 1-3um.Coating conductive silver glue makes the electric conductivity of the first radiating block and the second radiating block more preferable, it is to avoid due to addition
First radiating block and the second radiating block cause too high in resistance, the electric current conduction in influence chip herein in chip, and then produce big
Calorimetric amount, influences the long-term use of LED chip.The thickness control of conductive layer is in 3um, it is to avoid conductive silver glue is too thick, influences light
Transmitting of the line in LED chip.
Preferably, the cross section of the radiating groove is triangle or circular arc, the surface of the radiating groove is provided with leads
Electric elargol layer.Triangle or circular arc radiating groove are set, under identical volume, more area of dissipations can be provided, make radiating
It is better.
Preferably, the substrate is high heat-conducting ceramic substrate or graphite substrate.Using high heat-conducting ceramic substrate or
Graphite substrate, preferably conducts the heat above radiating block.
Preferably, the P electrode and N electrode are provided with the radiating projection being engaged with radiating groove.
Preferably, cross-sectional area of the cross-sectional area of first radiating block more than the P electrode, second radiating
Cross-sectional area of the cross-sectional area of block more than the N electrode.
The utility model is by adopting the above-described technical solution, the technique effect having：One kind that the utility model is provided
High-power flip LED light source, by setting radiating block, expands area of dissipation, improves the radiating of high-power flip LED light source
Problem, extends the service life of chip；Meanwhile, radiating groove is set with radiating block weld in P electrode and N electrode, increase
Contact area, makes the electric current at P electrode and N electrode not pile up generation accumulated heat, makes LED chip light extraction more uniform.
Brief description of the drawings
Fig. 1 is encapsulating structure schematic diagram of the present utility model；
Fig. 2 is part A structural representation of the present utility model；
Fig. 3 is part B structural representation of the present utility model.
In figure：Substrate 1, circuit layer 2, the second radiating block 3, N electrode 4, P electrode 5, flip LED chips 6, radiating groove 7,
Conductive silver glue-line 8, the first radiating block 9.
Specific embodiment
The utility model is described in further detail with embodiment below in conjunction with the accompanying drawings.
As shown in Figure 1, Figure 2, Figure 3 shows, a kind of high-power flip LED light source, including substrate 1 and it is arranged on the substrate 1
Flip LED chips 6, flip LED chips 6 include P electrode 5 and N electrode 4, be provided with circuit between substrate 1 and flip LED chips 6
Layer 2, circuit layer 2 is provided with the first radiating block 9 and the second radiating block 3, the P electrode 5 and N electrode 4 of flip LED chips 6 respectively with
The first radiating block 9 and the second radiating block 3 on the circuit layer 2 are connected, the contact surface of the first radiating block 9 and the second radiating block 3
It is evenly arranged radiating groove 7, the surface area ratio of the first radiating block 9 and the second radiating block 3 is 1:2-1:3.In the preferred embodiment,
The surface area ratio of the first radiating block 9 and the second radiating block 3 is 1:2.First radiating block 9 and the noncontact face of the second radiating block 3 apply
Cover and put conductive silver glue-line 8, the thickness of conductive silver glue-line 8 is 1-3um.Coating conductive silver glue dissipates the first radiating block 9 and second
The electric conductivity of hot block 3 is more preferable, it is to avoid because the first radiating block 9 of addition and the second radiating block 3 cause in chip resistance mistake herein
Height, the electric current conduction in influence chip, and then amount of heat is produced, influence the long-term use of LED chip.Conductive silver glue-line 8
Thickness control is in 3um, it is to avoid conductive silver glue is too thick, transmitting of the influence light in LED chip.In the preferred embodiment, this
The thickness for locating conductive silver glue-line 8 is 2um.
The cross section of the radiating groove 7 is triangle or circular arc, and the surface of the radiating groove 7 is uniformly coated with conduction
Elargol layer 8.The substrate 1 is high heat-conducting ceramic substrate or graphite substrate.Using high heat-conducting ceramic substrate or graphite substrate,
Preferably the heat above radiating block is conducted.
The P electrode 5 and N electrode 4 are provided with the radiating projection being engaged with radiating groove 7.By projection and the radiating of radiating
The cooperation of groove 7, further increases the conductive area of P electrode 5 and N electrode 4, reduces the electric current at P electrode 5 and N electrode 4
Pile up.The cross-sectional area of the radiating block 3 of first radiating block 9 and second is respectively greater than the cross section of the P electrode 5 and N electrode 4
Product.
In the LED chips 6 of upside-down mounting, N electrode 4 carries the main radiating task of LED chips 6, therefore will be with N electricity
The surface area of the second radiating block 3 of the welding of pole 4 is set to six times of the first radiating block 9, and rationally increase the second radiating block 3 side is non-
Contact area, expands area of dissipation.Radiating groove 7 is evenly arranged in the contact surface of the first radiating block 9 and the second radiating block 3, is increased
The big contact area of welding, welding is more stablized, and the electric current at P electrode 5 and N electrode 4 is not piled up generation accumulated heat,
Make the light extraction of LED chip 6 more uniform, hot spot will not be produced.
In a word, preferred embodiment of the present utility model is the foregoing is only, it is all according to present utility model application the scope of the claims institute
The impartial change of work and modification, should all belong to the covering scope of the utility model patent.
Claims (6)
1. a kind of high-power flip LED light source, including substrate（1）Be arranged on the substrate（1）On flip LED chips（6）,
The flip LED chips（6）Including P electrode（5）And N electrode（4）, it is characterised in that the substrate（1）With the flip LED
Chip（6）Between be provided with circuit layer, the circuit layer is provided with the first radiating block（9）With the second radiating block（3）, the P electrode
（5）With first radiating block（9）Connection, the N electrode（4）With second radiating block（3）Connection, first radiating block
（9）Upper and P electrode（5）The even arrangement radiating groove of contact surface being connected（7）, second radiating block（3）Upper and N electrode（4）Phase
The contact surface of connection is evenly arranged radiating groove（7）, first radiating block（9）Surface area and the second radiating block（3）Surface
The ratio between product is 1:2-1:3.
2. a kind of high-power flip LED light source according to claim 1, it is characterised in that first radiating block（9）With
Second radiating block（3）Noncontact face is provided with conductive silver glue-line（8）, the conductive silver glue-line（8）Thickness be 1-3um.
3. a kind of high-power flip LED light source according to claim 1 and 2, it is characterised in that the radiating groove（7）'s
Cross section is triangle or circular arc, the radiating groove（7）Surface be provided with conductive silver glue-line.
4. a kind of high-power flip LED light source according to claim 3, it is characterised in that the substrate（1）It is high heat conduction
Ceramic substrate or graphite substrate.
5. a kind of high-power flip LED light source according to claim 4, it is characterised in that the P electrode（5）And N electrode
（4）It is provided with and the radiating groove（7）The radiating projection being engaged.
6. a kind of high-power flip LED light source according to claim 1, it is characterised in that first radiating block（9）'s
Cross-sectional area is more than the P electrode（5）Cross-sectional area, second radiating block（3）Cross-sectional area be more than the N electrode
（4）Cross-sectional area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621456319.6U CN206312938U (en) | 2016-12-28 | 2016-12-28 | A kind of high-power flip LED light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621456319.6U CN206312938U (en) | 2016-12-28 | 2016-12-28 | A kind of high-power flip LED light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206312938U true CN206312938U (en) | 2017-07-07 |
Family
ID=59247418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621456319.6U Expired - Fee Related CN206312938U (en) | 2016-12-28 | 2016-12-28 | A kind of high-power flip LED light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206312938U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451494A (en) * | 2020-05-09 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | LED backboard |
| WO2021213107A1 (en) * | 2020-04-21 | 2021-10-28 | 青岛海信激光显示股份有限公司 | Laser assembly |
-
2016
- 2016-12-28 CN CN201621456319.6U patent/CN206312938U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021213107A1 (en) * | 2020-04-21 | 2021-10-28 | 青岛海信激光显示股份有限公司 | Laser assembly |
| CN115461945A (en) * | 2020-04-21 | 2022-12-09 | 青岛海信激光显示股份有限公司 | Laser assembly |
| CN113451494A (en) * | 2020-05-09 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | LED backboard |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170707 Termination date: 20191228 |