CN205900525U - Power semiconductor module chip connection structure that breaks is prevented in high heat conduction - Google Patents
Power semiconductor module chip connection structure that breaks is prevented in high heat conduction Download PDFInfo
- Publication number
- CN205900525U CN205900525U CN201620597106.9U CN201620597106U CN205900525U CN 205900525 U CN205900525 U CN 205900525U CN 201620597106 U CN201620597106 U CN 201620597106U CN 205900525 U CN205900525 U CN 205900525U
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- China
- Prior art keywords
- molybdenum sheet
- power semiconductor
- heat conduction
- high heat
- connecting structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a power semiconductor module chip connection structure that breaks is prevented in high heat conduction, including the radiating bottom plate, insulating ceramic, the circuit bottom, the molybdenum sheet compounds down, wafer chip and last compound molybdenum sheet, from the bottom up is equipped with insulating ceramic in proper order on the radiating bottom plate, the circuit bottom, the molybdenum sheet compounds down, wafer chip and last compound molybdenum sheet, compound molybdenum sheet comprises the frame molybdenum sheet body and heat conductor down, it has the through -hole to open on the frame molybdenum sheet body, the heat conductor tamps in the through -hole, terminal surface parallel and level about the terminal surface is personally experienced sth. Part of the body with the frame molybdenum sheet about the heat conductor. Owing to add quick heat dissipation path between wafer chip and radiating bottom plate, can reduce the operating temperature of wafer chip like this, can prevent again that the wafer chip from breaking to put forward the job stabilization nature and the reliability of high power semiconductor device. Thereby the life of extension wafer chip.
Description
Technical field
The utility model is related to a kind of power semiconductor modular, and more particularly, to a kind of power semiconductor modular chip connects knot
Structure.
Background technology
With development in science and technology, power semiconductor develops to high-power high density direction, high-power highdensity power
In use, the technical problem of most critical is chip cooling and break-resistance problem to module, and it is to determine high-power high density
Power model performance whether stable, the deciding factor of service life length.
In existing high-power highdensity power model, chip is all wafer silicon chip, because the thermal conductivity of copper is fine,
Most of using wafer silicon chip and copper-based welding, like this, heating can be substantially reduced it is ensured that the thermal diffusivity of module.But,
Because the coefficient of expansion of copper is bigger than the coefficient of expansion of wafer, when energising uses, both meetings lead to weld because of thermal expansion difference
Produce crack, lead to chip wafer to come off from circuit base copper, or even chip wafer also can lead to because of the expansion extruding of copper
Itself is damaged, thus leading to inside modules to connect fracture so that semiconductor module damages, increasing maintenance renewal cost, increasing into
This.In order to overcome above-mentioned deficiency, existing semi-conductor power module chip wafer all adopts mounting structure as shown in Figure 1, is dissipating
Insulating ceramic film 2, underlying circuit layer 3, lower molybdenum sheet 4, chip wafer 5 and upper molybdenum sheet 6 are sequentially provided with from top to bottom on hot base plate 1,
In this welding structure, prevent chip wafer because of the key that the encapsulation technology that the temperature difference ruptures is to full wafer chip wafer 5 protection, brilliant
In circle packaging process, wherein sintering refers to, under vacuum, hot environment, the treated molybdenum sheet of chip wafer 5 and surface be welded
It is connected together, because the coefficient of expansion of molybdenum and the coefficient of expansion of chip wafer 5 are sufficiently close to, after chip wafer 5 work heats up,
Its lower upper two sides is fixing by lower molybdenum sheet 4 and upper molybdenum sheet 6 respectively, enables synchronization when temperature raises latter three expanded by heating, will not
Lead to chip wafer 5 damaged, and be located at and keep good electric conductivity between the lower molybdenum sheet 4 of chip wafer 5 lower section and underlying circuit layer 3
Can, thus extending the service life of chip wafer 5.But, because molybdenum sheet has certain thermal resistance in itself, the heat conduction of molybdenum at room temperature
Rate is generally 142.35w/ (m k), far below the thermal conductivity (thermal conductivity of HIGH-PURITY SILICON is up to about 500w/ (m k)) of silicon, when
When having electric current to pass through, upper molybdenum sheet 6 can gather certain heat, and upper molybdenum sheet 6 is to weld together with chip wafer 5,
The heat that chip wafer 5 produces is made cannot to be rapidly conducted to radiating bottom plate, under long-time power on condition, due to molybdenum sheet
Heat dispersion is poor, and the heat that chip wafer 5 produces cannot distribute in time, and substantial amounts of heat cannot radiate so that chip wafer 5 is warm
Degree is high, and the electrical property of chip wafer 5 constantly declines and deteriorates although chip wafer 5 will not rupture because of thermal expansion, but
The electrical property of module can constantly decline, and power semiconductor job stability declines, and is greatly stranded to producing with using bringing
Disturb.
In order to solve the problems, such as molybdenum sheet weak heat-dissipating, applicants have invented a kind of power semiconductor modular of high heat conduction break-resistance
Chip connecting structure, can not only in effective control power model chip wafer temperature, and avoid leading because of coefficient of expansion difference
Cause the problem of chip rupture, improve the service life of power model.
Utility model content:
The purpose of this utility model is to provide a kind of high heat conduction break-resistance power semiconductor modular chip connecting structure, and it was both
Can prevent from chip wafer from heating up to rupture, in time the heat that chip wafer produces can be conducted to radiating bottom plate again, improve power half
The radiating effect of conductor power model, improves job stability and the service life of semi-conductor power module.
The technical scheme that the utility model is taken is as follows:
A kind of high heat conduction break-resistance power semiconductor modular chip connecting structure, is characterized in that: includes radiating bottom plate, insulation
Potsherd, underlying circuit layer, lower compound molybdenum sheet, chip wafer and upper compound molybdenum sheet, are sequentially provided with radiating bottom plate from top to bottom
Insulating ceramic film, underlying circuit layer, lower compound molybdenum sheet, chip wafer and upper compound molybdenum sheet, lower compound molybdenum sheet by framework molybdenum sheet body and
Heat carrier forms, and has through hole, heat carrier tamps in through-holes on framework molybdenum sheet body, heat carrier upper and lower end face and framework molybdenum sheet
Body upper and lower end face is concordant.
Further, one and more than one through hole are had on framework molybdenum sheet body.
Further, more than two through holes are provided with framework molybdenum sheet body.
Further, four through holes are evenly provided with framework molybdenum sheet body.
Further, described through hole is generally circular in shape or non-circular.
Further, described through hole is circle.
Further, the structure of described compound molybdenum sheet is identical with the structure of lower compound molybdenum sheet.
Further, the material of described heat carrier is copper or silver or heat conduction colloid.
Further, the material of described heat carrier is copper or silver.
Further, the material of described heat carrier is heat conduction colloid.
Due to the simple molybdenum sheet in high heat conduction break-resistance power semiconductor modular chip connecting structure being designed to compound molybdenum
Piece, offers through hole on framework molybdenum sheet body, tamps heat carrier in through hole, so both utilize well molybdenum sheet the coefficient of expansion and
Performance that the coefficient of expansion of chip wafer is close it is ensured that chip wafer work long hours will not temperature rise too high, chip operation mistake
The heat carrier that the heat that journey produces passes through to tamp in through hole on framework molybdenum sheet body is directly conducted to radiating bottom plate, so can drop
The operating temperature of low chip wafer, can prevent chip wafer from rupturing, due to having up and down by framework molybdenum sheet body of chip wafer again
Clamping, and the expansion coefficient similar of three, chip wafer will be led to damage because of expanded by heating, thus extending making of chip wafer
Use the life-span.On the other hand, due to being additionally arranged quick heat radiating path between chip wafer and radiating bottom plate, that is, it is distributed in frame
Heat carrier in frame molybdenum sheet, thus can reduce the operating temperature of chip wafer, thus improving the work of power semiconductor
Stability and reliability.
Brief description:
Fig. 1 is existing semi-conductor power module chip wafer mounting structure schematic diagram；
Fig. 2 is structural representation of the present utility model；
Fig. 3 is the structural representation of lower compound molybdenum sheet；
Fig. 4 is the a-a sectional view in Fig. 3；
In figure: 1- radiating bottom plate；2- insulating ceramic film；3- underlying circuit layer；Molybdenum sheet under 4-；5- chip wafer；The upper molybdenum sheet of 6-；
It is combined molybdenum sheet under 7-；Molybdenum sheet is combined on 8-；71- framework molybdenum sheet body；72- heat carrier；73- through hole.
Specific embodiment:
Specific embodiment of the present utility model is described below in conjunction with the accompanying drawings:
Embodiment 1: high heat conduction break-resistance power semiconductor modular chip connecting structure, as shown in Figure 2 to 4, including scattered
Hot base plate 1, insulating ceramic film 2, underlying circuit layer 3, lower compound molybdenum sheet 7, chip wafer 5 and upper compound molybdenum sheet 8, in radiating bottom plate 1
On be sequentially provided with insulating ceramic film 2, underlying circuit layer 3, lower compound molybdenum sheet 7, chip wafer 5 and upper compound molybdenum sheet 8 from top to bottom, under
Compound molybdenum sheet 7 is made up of framework molybdenum sheet body 71 and heat carrier 72, equably has four manholes on framework molybdenum sheet body 71
73, heat carrier 72 tamps in through hole 73, and the upper and lower end face of heat carrier 72 is concordant with the upper and lower end face of framework molybdenum sheet body 71, described
The material of heat carrier 73 is red copper, and the structure of described compound molybdenum sheet 8 is identical with the structure of lower compound molybdenum sheet 7.
Embodiment of the present utility model is a lot, and here is not enumerated one by one, and framework molybdenum sheet body 71 opens up the number of through hole 73
Amount, shape all can change, and the material of heat carrier 72 also can be selected for other Heat Conduction Materials, for example silver or heat conduction colloid etc..As long as will
The function alternative such as all of the inserted conductive structure that full wafer molybdenum sheet makes into be made up of framework molybdenum sheet body 71 and heat carrier 72
All within protection domain of the present utility model.
Claims (10)
1. a kind of high heat conduction break-resistance power semiconductor modular chip connecting structure, is characterized in that: includes radiating bottom plate (1), absolutely
Edge potsherd (2), underlying circuit layer (3), lower compound molybdenum sheet (7), chip wafer (5) and upper compound molybdenum sheet (8), in radiating bottom plate
(1) it is sequentially provided with insulating ceramic film (2), underlying circuit layer (3), lower compound molybdenum sheet (7), chip wafer (5) and upper on from top to bottom
Compound molybdenum sheet (8), lower compound molybdenum sheet (7) is made up of framework molybdenum sheet body (71) and heat carrier (72), on framework molybdenum sheet body (71)
Have through hole (73), heat carrier (72) tamps in through hole (73), on heat carrier (72) upper and lower end face and framework molybdenum sheet body (71)
Lower surface is concordant.
2. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 1, is characterized in that: in framework
Molybdenum sheet body (71) is provided with one and more than one through hole (73).
3. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 2, is characterized in that: in framework
Molybdenum sheet body (71) is provided with more than two through holes (73).
4. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 3, is characterized in that: in framework
Four through holes (73) are evenly provided with molybdenum sheet body (71).
5. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 1, is characterized in that: described logical
Hole (73) generally circular in shape or non-circular.
6. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 5, is characterized in that: described logical
Hole (73) is circle.
7. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 1, is characterized in that: upper compound
The structure of molybdenum sheet (8) is identical with the structure of lower compound molybdenum sheet (7).
8. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 1, is characterized in that: described leads
The material of hot body (72) is copper or silver or heat conduction colloid.
9. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 8, is characterized in that: described leads
The material of hot body (72) is copper or silver.
10. high heat conduction break-resistance power semiconductor modular chip connecting structure according to claim 8, is characterized in that: described
The material of heat carrier (72) is heat conduction colloid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620597106.9U CN205900525U (en) | 2016-06-18 | 2016-06-18 | Power semiconductor module chip connection structure that breaks is prevented in high heat conduction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620597106.9U CN205900525U (en) | 2016-06-18 | 2016-06-18 | Power semiconductor module chip connection structure that breaks is prevented in high heat conduction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205900525U true CN205900525U (en) | 2017-01-18 |
Family
ID=57767831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620597106.9U Active CN205900525U (en) | 2016-06-18 | 2016-06-18 | Power semiconductor module chip connection structure that breaks is prevented in high heat conduction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205900525U (en) |
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2016
- 2016-06-18 CN CN201620597106.9U patent/CN205900525U/en active Active
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |