CN105932002A - High-conductivity break-resistant chip connection structure for power semiconductor module - Google Patents
High-conductivity break-resistant chip connection structure for power semiconductor module Download PDFInfo
- Publication number
- CN105932002A CN105932002A CN201610440831.XA CN201610440831A CN105932002A CN 105932002 A CN105932002 A CN 105932002A CN 201610440831 A CN201610440831 A CN 201610440831A CN 105932002 A CN105932002 A CN 105932002A
- Authority
- CN
- China
- Prior art keywords
- molybdenum sheet
- power semiconductor
- heat conduction
- connecting structure
- semiconductor modular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a high-conductivity break-resistant chip connection structure for a power semiconductor module. The chip connection structure comprises a cooling base plate, an insulating ceramic wafer, a circuit bottom layer, lower composite molybdenum sheets, wafer chips and upper composite molybdenum sheets, wherein the cooling base plate is sequentially provided with the insulating ceramic wafer, the circuit bottom layer, the lower composite molybdenum sheets, the wafer chips and the upper composite molybdenum sheets from bottom to top; each lower composite molybdenum sheet comprises a frame molybdenum sheet body and heat conductors; through holes are formed in each frame molybdenum sheet body; the through holes are filled with the corresponding heat conductors; and the upper end surfaces and the lower end surfaces of the heat conductors are flush with the upper end surfaces and the lower end surfaces of the corresponding frame molybdenum sheet bodies. A rapid cooling path is added between the wafer chips and the cooling bottom plate, so that the working temperature of the wafer chips can be reduced; and the wafer chips can also be prevented from breaking, thereby improving the working stability and reliability of a power semiconductor device and prolonging the service lifetime of the wafer chips.
Description
Technical field
The present invention relates to a kind of power semiconductor modular, particularly relate to a kind of power semiconductor modular chip and connect
Structure.
Background technology
Along with development in science and technology, power semiconductor develops to high-power high density direction, high-power high density
Power model in use, most critical technical problem is that chip cooling and break-resistance problem, it is
Determine that high-power highdensity power model performance is whether stable, service life length deciding factor.
In existing high-power highdensity power model, chip is all wafer silicon chip, due to the thermal conductivity of copper
Very well, major part uses wafer silicon chip to weld with cuprio, like this, can substantially reduce heating, it is ensured that mould
The thermal diffusivity of block.But, owing to the coefficient of expansion of copper is bigger than the coefficient of expansion of wafer, when energising uses, two
Person can cause weld to produce crack because of thermal expansion difference, causes chip wafer to come off from circuit base copper, very
Also can extrude because of the expansion of copper to chip wafer causes itself damaged, thus causes inside modules to connect fracture,
Semiconductor module is damaged, increases maintenance renewal cost, increase cost.In order to overcome above-mentioned deficiency, existing
Semi-conductor power module chip wafer all uses mounting structure as shown in Figure 1, on radiating bottom plate 1 from lower to
On be sequentially provided with insulating ceramic film 2, underlying circuit layer 3, lower molybdenum sheet 4, chip wafer 5 and upper molybdenum sheet 6, at this
Planting in Welding Structure, full wafer chip wafer 5 is protected by the encapsulation technology preventing chip wafer from rupturing because of the temperature difference
Key, in wafer level packaging operation, wherein sintering refers under vacuum, hot environment, by chip wafer 5 and table
The treated molybdenum sheet in face welds together, due to the coefficient of expansion of molybdenum and chip wafer 5 the coefficient of expansion very
Close, after chip wafer 5 work heats up, its lower upper two sides is fixed by lower molybdenum sheet 4 and upper molybdenum sheet 6 respectively,
Can realize synchronizing when temperature raises latter three expanded by heating, be not result in that chip wafer 5 is damaged, and be positioned at wafer
Keep good electric conductivity between lower molybdenum sheet 4 and underlying circuit layer 3 below chip 5, thus extend wafer core
The service life of sheet 5.But, owing to molybdenum sheet itself has certain thermal resistance, at room temperature the thermal conductivity of molybdenum is general
For 142.35W/ (m K), far below the thermal conductivity (thermal conductivity of HIGH-PURITY SILICON is up to 500W/ (m K) left and right) of silicon,
When there being electric current to pass through, upper molybdenum sheet 6 can gather certain heat, and upper molybdenum sheet 6 is and chip wafer
5 weld together so that the heat that chip wafer 5 produces cannot be conducted to radiating bottom plate, when long rapidly
Between under power on condition, owing to the heat dispersion of molybdenum sheet is poor, the heat that chip wafer 5 produces cannot distribute in time,
Substantial amounts of heat cannot dispel the heat so that chip wafer 5 temperature remains high, under the electrical property of chip wafer 5 is continuous
Fall and deterioration, although chip wafer 5 will not rupture because of thermal expansion, but the electrical property of module can constantly decline,
Power semiconductor job stability declines, and brings puzzlement greatly to production and use.
In order to solve the problem of molybdenum sheet weak heat-dissipating, applicants have invented the power semiconductor of a kind of high heat conduction break-resistance
Module chip attachment structure, can not only effectively control the temperature of chip wafer in power model, and avoid because of swollen
Swollen coefficient difference causes the problem of chip rupture, improves the service life of power model.
Summary of the invention:
It is an object of the invention to provide a kind of high heat conduction break-resistance power semiconductor modular chip connecting structure, it
Can prevent from chip wafer from heating up to rupture, in time the heat that chip wafer produces can be conducted to radiating bottom plate again,
Improve the radiating effect of power semiconductor power module, improve the job stability of semi-conductor power module and make
Use the life-span.
The technical scheme that the present invention takes is as follows:
A kind of high heat conduction break-resistance power semiconductor modular chip connecting structure, is characterized in that: include the end of dispelling the heat
Plate, insulating ceramic film, underlying circuit layer, lower compound molybdenum sheet, chip wafer and upper compound molybdenum sheet, at the heat radiation end
Insulating ceramic film, underlying circuit layer, lower compound molybdenum sheet, chip wafer and upper multiple it is sequentially provided with from top to bottom on plate
Closing molybdenum sheet, lower compound molybdenum sheet is made up of framework molybdenum sheet body and heat carrier, has through hole on framework molybdenum sheet body,
Heat carrier tamps in through-holes, and heat carrier upper and lower end face is concordant with framework molybdenum sheet body upper and lower end face.
Further, framework molybdenum sheet body has one and more than one through hole.
Further, framework molybdenum sheet body is provided with more than two through holes.
Further, framework molybdenum sheet body is evenly provided with four through holes.
Further, described through hole is generally circular in shape or non-circular.
Further, described through hole is circular.
Further, the structure of described compound molybdenum sheet is identical with the structure of lower compound molybdenum sheet.
Further, the material of described heat carrier is copper or silver-colored or heat conduction colloid.
Further, the material of described heat carrier is copper or silver.
Further, the material of described heat carrier is heat conduction colloid.
It is multiple owing to the simple molybdenum sheet in high heat conduction break-resistance power semiconductor modular chip connecting structure is designed to
Close molybdenum sheet, framework molybdenum sheet body offers through hole, tamps heat carrier at through hole, utilize molybdenum the most well
The performance that the coefficient of expansion of sheet and the coefficient of expansion of chip wafer are close, it is ensured that chip wafer works long hours not
Meeting temperature rise is too high, and the heat that chip operation process produces is by the heat carrier tamped in through hole on framework molybdenum sheet body
Directly it is conducted to radiating bottom plate, so can reduce the operating temperature of chip wafer, can prevent again chip wafer from breaking
Split, owing to having up and down by framework molybdenum sheet body of chip wafer is clamping, and the expansion coefficient similar of three, will not
Because expanded by heating causes chip wafer to damage, thus extend the service life of chip wafer.On the other hand, due to
Between chip wafer and radiating bottom plate, it is additionally arranged quick heat radiating path, is i.e. distributed in leading in framework molybdenum sheet
Hot body, thus can reduce the operating temperature of chip wafer, thus improve the working stability of power semiconductor
Property and reliability.
Accompanying drawing illustrates:
Fig. 1 is existing semi-conductor power module chip wafer mounting structure schematic diagram；
Fig. 2 is the structural representation of the present invention；
Fig. 3 is the structural representation of lower compound molybdenum sheet；
Fig. 4 is the A-A sectional view in Fig. 3；
In figure: 1-radiating bottom plate；2-insulating ceramic film；3-underlying circuit layer；Molybdenum sheet under 4-；5-chip wafer；
The upper molybdenum sheet of 6-；Compound molybdenum sheet under 7-；The upper compound molybdenum sheet of 8-；71-framework molybdenum sheet body；72-heat carrier；73-through hole.
Detailed description of the invention:
The detailed description of the invention of the present invention is described below in conjunction with the accompanying drawings:
Embodiment 1: high heat conduction break-resistance power semiconductor modular chip connecting structure, as shown in Figure 2 to 4,
Including radiating bottom plate 1, insulating ceramic film 2, underlying circuit layer 3, lower compound molybdenum sheet 7, chip wafer 5 and on
Compound molybdenum sheet 8, radiating bottom plate 1 is sequentially provided with from top to bottom insulating ceramic film 2, underlying circuit layer 3, under
Compound molybdenum sheet 7, chip wafer 5 and upper compound molybdenum sheet 8, lower compound molybdenum sheet 7 is by framework molybdenum sheet body 71 and leads
Hot body 72 forms, and has four manholes 73 on framework molybdenum sheet body 71 equably, and heat carrier 72 tamps
In through hole 73, the upper and lower end face of heat carrier 72 is concordant with the upper and lower end face of framework molybdenum sheet body 71, described in lead
The material of hot body 73 is red copper, and the structure of described compound molybdenum sheet 8 is identical with the structure of lower compound molybdenum sheet 7.
Embodiments of the present invention are a lot, enumerate the most one by one at this, framework molybdenum sheet body 71 offers through hole 73
Quantity, shape all can change, the material of heat carrier 72 also can be selected for other Heat Conduction Material, such as silver or lead
Hot glue body etc..As long as making into full wafer molybdenum sheet inserted to be led by what framework molybdenum sheet body 71 and heat carrier 72 formed
The function alternative such as all of heat structure are all within protection scope of the present invention.
Claims (10)
1. a high heat conduction break-resistance power semiconductor modular chip connecting structure, is characterized in that: include heat radiation
Base plate (1), insulating ceramic film (2), underlying circuit layer (3), lower compound molybdenum sheet (7), chip wafer (5)
With upper compound molybdenum sheet (8), radiating bottom plate (1) is sequentially provided with insulating ceramic film (2), electricity from top to bottom
Road bottom (3), lower compound molybdenum sheet (7), chip wafer (5) and upper compound molybdenum sheet (8), lower compound molybdenum sheet
(7) it is made up of framework molybdenum sheet body (71) and heat carrier (72), framework molybdenum sheet body (71) has logical
Hole (73), heat carrier (72) tamps in through hole (73), heat carrier (72) upper and lower end face and framework molybdenum
Lamellar body (71) upper and lower end face is concordant.
The highest heat conduction break-resistance power semiconductor modular chip connecting structure, it is special
Levy and be: on framework molybdenum sheet body (71), be provided with one and more than one through hole (73).
The most according to claim 2, power semiconductor modular height heat conduction break-resistance chip connecting structure, it is special
Levy and be: on framework molybdenum sheet body (71), be provided with more than two through holes (73).
The most according to claim 3, power semiconductor modular height heat conduction break-resistance chip connecting structure, it is special
Levy and be: on framework molybdenum sheet body (71), be evenly provided with four through holes (73).
The most according to claim 1, power semiconductor modular height heat conduction break-resistance chip connecting structure, it is special
Levy and be: described through hole (73) generally circular in shape or non-circular.
The most according to claim 5, power semiconductor modular height heat conduction break-resistance chip connecting structure, it is special
Levy and be: described through hole (73) is circle.
The highest heat conduction break-resistance power semiconductor modular chip connecting structure, it is special
Levy and be: the structure being above combined molybdenum sheet (8) is identical with the structure of lower compound molybdenum sheet (7).
The most according to claim 1, power semiconductor modular height heat conduction break-resistance chip connecting structure, it is special
Levy and be: the material of described heat carrier (72) is copper or silver-colored or heat conduction colloid.
The most according to claim 8, power semiconductor modular height heat conduction break-resistance chip connecting structure, it is special
Levy and be: the material of described heat carrier (72) is copper or silver.
Power semiconductor modular height heat conduction break-resistance chip connecting structure the most according to claim 8, its
Feature is: the material of described heat carrier (72) is heat conduction colloid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610440831.XA CN105932002A (en) | 2016-06-18 | 2016-06-18 | High-conductivity break-resistant chip connection structure for power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610440831.XA CN105932002A (en) | 2016-06-18 | 2016-06-18 | High-conductivity break-resistant chip connection structure for power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105932002A true CN105932002A (en) | 2016-09-07 |
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ID=56830647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610440831.XA Pending CN105932002A (en) | 2016-06-18 | 2016-06-18 | High-conductivity break-resistant chip connection structure for power semiconductor module |
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| Country | Link |
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| CN (1) | CN105932002A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110875266A (en) * | 2018-08-30 | 2020-03-10 | 广东威灵汽车部件有限公司 | Connection structure of semiconductor wafer |
-
2016
- 2016-06-18 CN CN201610440831.XA patent/CN105932002A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110875266A (en) * | 2018-08-30 | 2020-03-10 | 广东威灵汽车部件有限公司 | Connection structure of semiconductor wafer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160907 |
|
| WD01 | Invention patent application deemed withdrawn after publication |