CN205873904U - 一种氮化铝原料的纯化装置 - Google Patents
一种氮化铝原料的纯化装置 Download PDFInfo
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- CN205873904U CN205873904U CN201620685312.5U CN201620685312U CN205873904U CN 205873904 U CN205873904 U CN 205873904U CN 201620685312 U CN201620685312 U CN 201620685312U CN 205873904 U CN205873904 U CN 205873904U
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- 239000002994 raw material Substances 0.000 title claims abstract description 84
- 238000000746 purification Methods 0.000 title claims abstract description 41
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000002955 isolation Methods 0.000 claims abstract description 30
- 238000009413 insulation Methods 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims description 41
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- 239000010439 graphite Substances 0.000 claims description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 15
- 239000010937 tungsten Substances 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 230000014759 maintenance of location Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000003763 carbonization Methods 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 239000000843 powder Substances 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 8
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000004321 preservation Methods 0.000 abstract description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 abstract 4
- 235000017491 Bambusa tulda Nutrition 0.000 abstract 4
- 241001330002 Bambuseae Species 0.000 abstract 4
- 235000015334 Phyllostachys viridis Nutrition 0.000 abstract 4
- 239000011425 bamboo Substances 0.000 abstract 4
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 18
- 229910017083 AlN Inorganic materials 0.000 description 10
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000012010 growth Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910021384 soft carbon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
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CN201620685312.5U CN205873904U (zh) | 2016-06-30 | 2016-06-30 | 一种氮化铝原料的纯化装置 |
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CN201620685312.5U CN205873904U (zh) | 2016-06-30 | 2016-06-30 | 一种氮化铝原料的纯化装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112159952A (zh) * | 2020-10-10 | 2021-01-01 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种能同时碳化多个钽片的装置及方法 |
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2016
- 2016-06-30 CN CN201620685312.5U patent/CN205873904U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112159952A (zh) * | 2020-10-10 | 2021-01-01 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种能同时碳化多个钽片的装置及方法 |
CN112159952B (zh) * | 2020-10-10 | 2022-07-12 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种能同时碳化多个钽片的装置及方法 |
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Effective date of registration: 20231012 Address after: Room JZ2467, Yard 2, Junzhuang Road, Junzhuang Town, Mentougou District, Beijing, 102399 (cluster registration) Patentee after: Beijing Xingyun Lianzhong Technology Co.,Ltd. Address before: 101111 Courtyard 17, Tonghui Ganqu Road, Economic and Technological Development Zone, Tongzhou District, Beijing Patentee before: BEIJING HUAJINCHUANGWEI ELECTRONICS Co.,Ltd. |
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