CN204825132U - Polycrystalline silicon ingot casting thermal field structure - Google Patents
Polycrystalline silicon ingot casting thermal field structure Download PDFInfo
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- CN204825132U CN204825132U CN201520619220.2U CN201520619220U CN204825132U CN 204825132 U CN204825132 U CN 204825132U CN 201520619220 U CN201520619220 U CN 201520619220U CN 204825132 U CN204825132 U CN 204825132U
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- insulating strip
- heat insulating
- polycrystalline silicon
- heat
- ingot casting
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Abstract
The utility model provides a polycrystalline silicon ingot casting thermal field structure, the induction cooker comprises a cooker bod, the bottom plate, thermal -insulated cage, graphite heat conduction piece, heater and heat insulating strip, the bottom plate is fixed in in the furnace body, thermal -insulated cage is fixed in in the furnace body, thermal -insulated cage includes can dismantle the lateral wall of being connected with the bottom plate, graphite heat conduction piece is fixed in in the thermal -insulated cage, the heater is fixed in in the thermal -insulated cage, the heater covers in graphite heat conduction piece top, the heat insulating strip sets firmly on the lateral wall of thermal -insulated cage, the heat insulating strip extends along the thermal -insulated cage center directions of orientation, and has the clearance with the bottom plate, with inside high -temperature region and the low warm area of dividing into of cage that will insulate against heat. The utility model provides a polycrystalline silicon ingot casting thermal field structure is through setting up the heat insulating strip on thermal -insulated cage lateral wall to to the insulate against heat inside high -temperature region and the low warm area of dividing into of cage, at long brilliant in -process, when thermal -insulated cage up moves because on the heat insulating strip is fixed in thermal -insulated cage, so the heat insulating strip also and then thermal -insulated cage up move, make the crystal of growing out can in time get into low warm area, the speed of long crystalline substance is stablized and crystal quality is high more.
Description
Technical field
The utility model relates to field polysilicon, particularly relates to a kind of polycrystalline silicon ingot casting thermal field structure.
Background technology
Current domestic application is more is a kind of heat-exchanging method type of furnace (GT stove), adopts graphite resistance at surrounding and top firing.By promoting heat-insulation cage (0.12-0.2mm/ divides) to increase the specific heat load of graphite block.Due to the heats of well heater, crystal is in process of growth, and when solid-liquid interface is progressively upwards passed, solid-liquid interface place thermograde must be greater than 0, so the aperture of heat-insulation cage needs constantly to increase.This structure on the one hand heat-insulation cage aperture constantly increases and causes thermal losses large, and the crystal grown out on the other hand still can be subject to the thermal radiation of side heaters and have obstruction to bottom heat radiation.
Utility model content
Technical problem to be solved in the utility model is, provides one to reduce thermal losses, keeps the polycrystalline silicon ingot casting thermal field structure of long brilliant rate stabilization.
In order to solve the problems of the technologies described above, embodiment of the present utility model provides a kind of polycrystalline silicon ingot casting thermal field structure, described polycrystalline silicon ingot casting thermal field structure comprises body of heater, base plate, heat-insulation cage, graphite heat conducting block, well heater and heat insulating strip, described base plate is accommodated and is fixed in described body of heater, described heat-insulation cage is accommodated and is fixed in described body of heater, described heat-insulation cage comprises sidewall, described sidewall and described base plate removably connect, described graphite heat conducting block is accommodated and is fixed in described heat-insulation cage, described well heater is fixedly contained in described heat-insulation cage, and described well heater is covered in above described graphite heat conducting block, described heat insulating strip is located on described sidewall, and described heat insulating strip extends along the center position towards described heat-insulation cage, between described heat insulating strip and described base plate, there is gap, so that the inside of described heat-insulation cage is divided into cold zone and high-temperature zone.
Wherein, in order to place crucible on described graphite heat conducting block, described crucible is in order to hold polycrystalline silicon raw material, and described well heater encloses outside described crucible.
Wherein, described heat insulating strip is square bar, and described heat insulating strip comprises upper surface, and when the polycrystalline silicon raw material in described crucible starts to enter long crystalline substance, the upper surface of described heat insulating strip flushes with the bottom surface of described crucible.
Wherein, described high-temperature zone is the region of upper surface to described upper of furnace body of described heat insulating strip, and described cold zone is the region of lower surface to described base plate of described heat insulating strip.
Wherein, the material of described heat insulating strip is the hard felt of graphite.
Wherein, described heat insulating strip is fixed on the sidewall of described heat-insulation cage by supports support.
Wherein, the sidewall of described heat-insulation cage is extended with side plate towards the direction of described base plate, and one end of described strut member is located on described side plate, and the other end supports described heat insulating strip.
Wherein, described strut member is the screw rod or the graphite bar that are fixed on described side plate.
Wherein, described strut member is pad the projection be located on described side plate.
Wherein, described polycrystalline silicon ingot casting thermal field structure also comprises pillar stiffener, and described pillar stiffener is connected between described base plate and described graphite heat conducting block, to support fixing described graphite heat conducting block.
The polycrystalline silicon ingot casting thermal field structure that the utility model provides by arranging heat insulating strip on the sidewall of described heat-insulation cage, make heat insulating strip extend towards the center position of heat-insulation cage simultaneously, and make, between heat insulating strip and base plate, there is gap, thus the inside of heat-insulation cage is divided into high-temperature zone and cold zone.Due in long brilliant process, heat-insulation cage up can move in body of heater, the growing height of crystal is also slowly increasing, because heat insulating strip is located on heat-insulation cage, when heat-insulation cage up moves, heat insulating strip also follows heat-insulation cage up to move, so the region of cold zone can be made to increase gradually, make the crystal grown out can enter cold zone in time, thus reduce the impact on solid-liquid growth interface, thus reduce thermal losses.In addition, because crystal can enter cold zone in time, so long brilliant speed is more stable and crystal mass is high.The polycrystalline silicon ingot casting thermal field structure that the utility model provides has the advantage that structure is simple, be convenient to manufacture.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the polycrystalline silicon ingot casting thermal field structure that the utility model embodiment provides.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described.
Refer to Fig. 1, a kind of polycrystalline silicon ingot casting thermal field structure 100 that the utility model embodiment provides, described polycrystalline silicon ingot casting thermal field structure 100 comprises body of heater 10, base plate 25, heat-insulation cage 20, graphite heat conducting block 30, well heater 40 and heat insulating strip 50.Described heat-insulation cage 20 is accommodated and is fixed in described body of heater 10.Described graphite heat conducting block 30 is accommodated and is fixed in described heat-insulation cage 20, described well heater 40 is fixedly contained in described heat-insulation cage 20, described heat insulating strip 50 is located on described heat-insulation cage 20, and the interior separation of described heat-insulation cage 20 is become high-temperature zone 21 and cold zone 22.
The polycrystalline silicon ingot casting thermal field structure 100 that the utility model provides, by being provided with described heat insulating strip 50 on the sidewall of described heat-insulation cage 20, to become described high-temperature zone 21 and cold zone 22 by the interior separation of described heat-insulation cage 20.By the way, be fixed on because heat insulating strip 50 is unsettled on described heat-insulation cage 20, when in long brilliant process, heat-insulation cage 20 up can move along described body of heater 10, the growing height of crystal is also slowly increasing, heat insulating strip 50 also can follow described heat-insulation cage 20 up to move, thus the region of cold zone 22 is increased, make the described crystal grown out can enter cold zone 22 in time, thus the impact that can reduce solid-liquid growth interface, and then make the brilliant speed of the length of described crystal more stable, improve the growth quality of crystal.
In the present embodiment, described body of heater 10 can be barrel-shaped, comprises a host cavity 11, in order to accommodate described heat-insulation cage 20.
Described body of heater 10 offers ventilating pit 12, described ventilating pit 12 extends in described heat-insulation cage 20 along the outside of described body of heater 10, in order to be filled with rare gas element.
Described heat-insulation cage 20 is accommodated and is fixed in described host cavity 11.In the present embodiment, described heat-insulation cage 20 comprises top board 23 and sidewall 24.Described top board 23 is oppositely arranged with described base plate 25, and described top board 23 is warming plate.Described base plate 25 is ladder sheet part, and the warming plate different by two piece sizes forms, and described sidewall 24 is arranged around described base plate 25, and for removably connecting between described base plate 25 and described sidewall 24.When described heat-insulation cage 20 moves in long brilliant process above described body of heater 10, described base plate 25 can be separated with described sidewall 24.Particularly, described sidewall 24 is for be combined to form by four blocks of side plates, and described sidewall 24 is extended with side plate 241 towards the direction of described base plate 25, and described side plate 241 is stepped appearance plate or square batten.
In order to improve further, described polycrystalline silicon ingot casting thermal field structure 100 also comprises pillar stiffener 60, and described pillar stiffener 60 is connected between described base plate 25 and described graphite heat conducting block 30, to support fixing described graphite heat conducting block 30.In the present embodiment, the two ends of described pillar stiffener 60 extend to bottom described body of heater 10 and described graphite heat conducting block 30 from described base plate 25 respectively, and in order to ensure its support performance, described pillar stiffener 60 is made by high temperature material.
It is inner that described graphite heat conducting block 30 is located at described heat-insulation cage 20.In the present embodiment, described graphite heat conducting block 30 is stepped appearance lumphy structure.In order to place crucible 70 on described graphite heat conducting block 30, described crucible 70 is in order to hold polycrystalline silicon raw material.Described graphite heat conducting block 30 can by bottom the heat conduction in described body of heater 10 to described crucible 70.Be understandable that, in other embodiments, described graphite heat conducting block 30 also can be square lumphy structure or U-shaped lumphy structure etc.
In order to improve further, the material of described crucible 70 is quartz sand, and to ensure that it is hard, wear resistance and thermotolerance, make when heating, the chemical property of described crucible 70 can not change.Certainly, in other embodiments, the material of described crucible 70 also can be clay, china clay or graphite etc.
In the present embodiment, the inwall of described crucible 70 applies one deck silicon nitride coating, to prevent in high-temperature heating process, stop that silicon liquid contacts with crucible and react, play the effect of the demoulding.Certainly, in other embodiments, also can coated ceramic coating on the inwall of crucible 70.
In addition, in order to further improvement, the top of described crucible 70 also can cover a cover plate (not identifying in figure), described ventilating pit 12 extends to described cover plate along the outside of described body of heater, and stretch in described crucible 70, to be filled with rare gas element, be used for carrying away the foreign gas effect that crucible produces.Particularly, the material of described cover plate is high strength carbon carbon fiber, to ensure its high temperature resistant and wear resistance.Described cover plate is used for the opening end closing described crucible 70, so that when heating, while heat not easily distributes from opening end, impurity not easily enters from opening part, thus it is inner to make heat concentrate on described crucible 70, and improves ingot quality further.
Described well heater 40 is covered in above described graphite heat conducting block 30, and described well heater 40 encloses outside described crucible 70.In the present embodiment, described well heater 40 is positioned at described high-temperature zone 21, thus described high-temperature zone 21 can be made to continue to keep high temperature.Concrete, described well heater 40 comprises hot-plate 41 and heat block 42.Described hot-plate 41 is connected with described top board 23.Described hot-plate 41 relatively described crucible 70 opening end is arranged.Described heat block 42 is fixed on described hot-plate 41 periphery, and is positioned at described crucible 70 weeks sides.Described hot-plate 41 heats described crucible 70 opening end, and described heat block 42 is to the side heating in 70 weeks of described crucible.
Described heat insulating strip 50 is fixedly arranged on the described sidewall 24 of described heat-insulation cage 20, and described heat insulating strip extends along the center position towards described heat-insulation cage.In the present embodiment, described heat insulating strip 50 relative orientation on sidewall 24 described in adjacent two is arranged, so that described heat-insulation cage 20 is separated to form described high-temperature zone 21 and described cold zone 22.Preferably, described heat insulating strip 50 is square bar, and in order to ensure its resistance to elevated temperatures, the material of described heat insulating strip 50 is the hard felt of graphite, and the thickness of described heat insulating strip 50 is 3mm ~ 6mm.Be understandable that, in other embodiments, described heat insulating strip 50 also can be U-shaped list structure, and the thickness of described heat insulating strip 50 also can be arranged according to practical situation adjustment.
Further, described heat insulating strip 50 comprises upper surface 51, and when the polycrystalline silicon raw material in described crucible 70 starts to enter long crystalline substance, the upper surface 51 of described heat insulating strip 50 flushes with the bottom surface of described crucible 70.Particularly, when starting long crystalline substance, the upper surface 51 of described heat insulating strip 50 flushes with the bottom surface of described crucible 70, and described high-temperature zone 21 is the region of upper surface 51 to described body of heater 10 top of described heat-insulation cage 50, and described cold zone 22 is the region of lower surface to described base plate 25 of described heat insulating strip 50.Described polycrystalline silicon raw material in described crucible 70 long crystalline substance becomes in the process of crystal, described base plate 25 can be separated with the sidewall 24 of described heat-insulation cage 20, described heat-insulation cage 20 up moves along the short transverse of described body of heater 10, because described heat-insulation cage 20 up can move along the short transverse of described body of heater 10, and described heat insulating strip 50 is fixedly arranged on described heat-insulation cage 20, so when described heat-insulation cage 20 up moves along the short transverse of described body of heater 10, described heat insulating strip 50 can be followed the movement of described heat-insulation cage 20 and move, thus the crystal in described crucible 70 can be made can to depart from high-temperature zone 21 in time and enter described cold zone 22, and then the thermograde at solid-liquid interface place can be increased, improve the quality of the described crystal grown out.Be understandable that, in other embodiments, the position that described heat insulating strip 50 is located on the sidewall 24 of described heat-insulation cage 20 also can adjust according to the brilliant speed of length of the position of described well heater 40 and described polycrystalline silicon raw material.
Further, between described heat insulating strip 50 and described base plate 25, there is gap.In the present embodiment, described heat insulating strip 50 is fixed on described sidewall 24 by strut member 52, thus described heat insulating strip 50 can be made can to have described gap between relatively described base plate 25, and then can ensure that the interior separation of described heat-insulation cage 20 can be become described high-temperature zone 21 and described cold zone 22 by described heat insulating strip 50, so that when described polycrystalline silicon raw material carries out long crystalline substance, realize needing centralized head load at holding stage, need to concentrate heat radiation in the long brilliant stage, be more conducive to described polycrystalline silicon raw material and be shaped to crystal block.Preferably, described strut member 52 is for being fixed on screw rod on described side plate 241 or graphite bar.The two ends of described strut member 52 connect described side plate 241 and described heat insulating strip 50 respectively, to support described heat insulating strip 50.Preferably, because described strut member 52 is located at the inside of described heat-insulation cage 20, so the resistance to elevated temperatures in order to ensure described strut member 52, the material of described strut member 52 can be graphite, quartz or silicon nitride etc.
Be understandable that, in other embodiments, described strut member 52 also can be the projection padding and be located on described side plate 241, and described heat insulating strip 50 is positioned on described strut member 52, thus can realize the effect between described heat insulating strip 50 and described base plate 25 with described gap.
The polycrystalline silicon ingot casting thermal field structure that the utility model provides by arranging heat insulating strip on the sidewall of described heat-insulation cage, make heat insulating strip extend along the center position towards heat-insulation cage simultaneously, and make, between heat insulating strip and base plate, there is gap, thus the inside of heat-insulation cage is divided into high-temperature zone and cold zone.Due in long brilliant process, heat-insulation cage up can move in body of heater, the growing height of crystal is also slowly increasing, because heat insulating strip is located on heat-insulation cage, when heat-insulation cage up moves, heat insulating strip also follows heat-insulation cage up to move, so the crystal grown out can be made can to enter cold zone in time, thus reduces the impact on solid-liquid growth interface.In addition, because crystal can enter cold zone in time, so long brilliant speed is more stable and crystal mass is high.The polycrystalline silicon ingot casting thermal field structure that the utility model provides has the advantage that structure is simple, be convenient to manufacture.
The above is preferred embodiment of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection domain of the present utility model.
Claims (10)
1. a polycrystalline silicon ingot casting thermal field structure, it is characterized in that, described polycrystalline silicon ingot casting thermal field structure comprises body of heater, base plate, heat-insulation cage, graphite heat conducting block, well heater and heat insulating strip, described base plate is accommodated and is fixed in described body of heater, described heat-insulation cage is accommodated and is fixed in described body of heater, described heat-insulation cage comprises sidewall, described sidewall and described base plate removably connect, described graphite heat conducting block is accommodated and is fixed in described heat-insulation cage, described well heater is fixedly contained in described heat-insulation cage, and described well heater is covered in above described graphite heat conducting block, described heat insulating strip is located on described sidewall, and described heat insulating strip extends along the center position towards described heat-insulation cage, between described heat insulating strip and described base plate, there is gap, so that the inside of described heat-insulation cage is divided into cold zone and high-temperature zone.
2. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, in order to place crucible on described graphite heat conducting block, described crucible is in order to hold polycrystalline silicon raw material, and described well heater encloses outside described crucible.
3. polycrystalline silicon ingot casting thermal field structure as claimed in claim 2, it is characterized in that, described heat insulating strip is square bar, and described heat insulating strip comprises upper surface, when the polycrystalline silicon raw material in described crucible starts to enter long crystalline substance, the upper surface of described heat insulating strip flushes with the bottom surface of described crucible.
4. polycrystalline silicon ingot casting thermal field structure as claimed in claim 3, is characterized in that, described high-temperature zone is the region of upper surface to described upper of furnace body of described heat insulating strip, and described cold zone is the region of lower surface to described base plate of described heat insulating strip.
5. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, the material of described heat insulating strip is the hard felt of graphite.
6. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, described heat insulating strip is fixed on the sidewall of described heat-insulation cage by supports support.
7. polycrystalline silicon ingot casting thermal field structure as claimed in claim 6, is characterized in that, the sidewall of described heat-insulation cage is extended with side plate towards the direction of described base plate, and one end of described strut member is located on described side plate, and the other end supports described heat insulating strip.
8. polycrystalline silicon ingot casting thermal field structure as claimed in claim 7, it is characterized in that, described strut member is the screw rod or the graphite bar that are fixed on described side plate.
9. polycrystalline silicon ingot casting thermal field structure as claimed in claim 7, is characterized in that, described strut member is pad the projection be located on described side plate.
10. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, described polycrystalline silicon ingot casting thermal field structure also comprises pillar stiffener, and described pillar stiffener is connected between described base plate and described graphite heat conducting block, to support fixing described graphite heat conducting block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520619220.2U CN204825132U (en) | 2015-08-17 | 2015-08-17 | Polycrystalline silicon ingot casting thermal field structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520619220.2U CN204825132U (en) | 2015-08-17 | 2015-08-17 | Polycrystalline silicon ingot casting thermal field structure |
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| Publication Number | Publication Date |
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| CN204825132U true CN204825132U (en) | 2015-12-02 |
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| CN201520619220.2U Expired - Fee Related CN204825132U (en) | 2015-08-17 | 2015-08-17 | Polycrystalline silicon ingot casting thermal field structure |
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- 2015-08-17 CN CN201520619220.2U patent/CN204825132U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 Termination date: 20210817 |
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| CF01 | Termination of patent right due to non-payment of annual fee |