CN204849121U - Polycrystalline silicon ingot casting thermal field structure - Google Patents
Polycrystalline silicon ingot casting thermal field structure Download PDFInfo
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- CN204849121U CN204849121U CN201520619184.XU CN201520619184U CN204849121U CN 204849121 U CN204849121 U CN 204849121U CN 201520619184 U CN201520619184 U CN 201520619184U CN 204849121 U CN204849121 U CN 204849121U
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- heat
- insulating strip
- heat insulating
- polycrystalline silicon
- ingot casting
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Abstract
The utility model provides a polycrystalline silicon ingot casting thermal field structure, the induction cooker comprises a cooker bod, thermal -insulated cage, graphite heat conduction piece and heater, thermal -insulated cage is acceptd in the furnace body, thermal -insulated cage includes one deck heated board and both sides wall, the heated board is located thermal -insulated cage bottom, establish first heat insulating strip on the wall of both sides, first heat insulating strip is located the heated board top, graphite heat conduction piece is acceptd in thermal -insulated cage, and has the interval with the heated board, the heated board, form insulated zoon between first heat insulating strip and the graphite heat conduction piece, the heater is fixed accepts in thermal -insulated cage, the heater covers in graphite heat conduction piece top. The utility model provides a polycrystalline silicon ingot casting thermal field structure establishes the one deck heated board through the bottom at thermal -insulated cage, has replaced the design of the current two -layer heated board of adoption to make between heated board and the graphite heat conduction piece temperature in the insulated zoon who forms be unlikely too high, thereby prevent whole the melting of silicon material with the crucible bottom, and then guarantee that the crucible bottom can remain the thin silicon of one deck material throughout, the growth of the follow -up crystal of being convenient for.
Description
Technical field
The utility model relates to field polysilicon, particularly relates to a kind of polycrystalline silicon ingot casting thermal field structure.
Background technology
High-efficiency polycrystalline casting mainly comprises fine melt method and fritting method two kinds, because the battery conversion efficiency of the high-efficiency polycrystalline silicon chip of fine melt method is lower than fritting method, is nowadays pursuing the efficient epoch, fritting method dominate gradually.At present, fritting method needs the ingot furnace thermal field supporting with it, makes retain the seed crystal of crucible bottom, the up core of remaining seed crystal and growth in bottom then in the silicon material fusion stage.
But be not melted because fritting method technique needs to control seed crystal in the fusion stage, the technique used in prior art is that the heat-insulation cage opening side in the fusion stage dispels the heat, and makes the silicon material fusion stage of crucible bottom be in below fusing point.And the time of opening due to heat-insulation cage is longer and the aperture of heat-insulation cage increases more, to increase bottom heat radiation to keep long brilliant proceeding, so cause energy consumption higher, cost is higher.
Utility model content
Technical problem to be solved in the utility model is, provides one can reduce energy consumption and saves cost polycrystalline silicon ingot casting thermal field structure.
In order to solve the problems of the technologies described above, embodiment of the present utility model provides a kind of polycrystalline silicon ingot casting thermal field structure, described polycrystalline silicon ingot casting thermal field structure comprises body of heater, heat-insulation cage, graphite heat conducting block and well heater, described heat-insulation cage is accommodated and is fixed in described body of heater, described heat-insulation cage comprises one layer of heat preservation plate and two side, described warming plate is positioned at the bottom of described heat-insulation cage, described two side is provided with the first heat insulating strip, described first heat insulating strip is positioned at above described warming plate, described graphite heat conducting block is accommodated and is fixed in described heat-insulation cage, and with described warming plate, there is a spacing, described warming plate, heat preservation zone is formed between described first heat insulating strip and described graphite heat conducting block, described well heater is fixedly contained in described heat-insulation cage, and described well heater is covered in above described graphite heat conducting block.
Wherein, described warming plate is square plate.
Wherein, in order to place crucible on described graphite heat conducting block, described crucible is in order to hold polycrystalline silicon raw material, and described well heater encloses outside described crucible.
Wherein, the two side of described heat-insulation cage is also provided with the second heat insulating strip, described second heat insulating strip is positioned on described first heat insulating strip, and the upper surface of described second heat insulating strip flushes with the bottom of described graphite heat conducting block.
Wherein, the both sides of described graphite heat conducting block are also provided with the 3rd heat insulating strip, between described 3rd heat insulating strip and described second heat insulating strip and described warming plate, form described heat preservation zone.
Wherein, the lower surface of described 3rd heat insulating strip and the upper surface flush of described second heat insulating strip.
Wherein, have difference of altitude between the upper surface of described second heat insulating strip and the lower surface of described 3rd heat insulating strip, the scope of described difference of altitude is 0 ~ 20mm.
Wherein, the material of described first heat insulating strip, the second heat insulating strip and the 3rd heat insulating strip is the hard felt of graphite.
Wherein, described polycrystalline silicon ingot casting thermal field structure also comprises three pillar stiffeners, and three described pillar stiffeners are connected between described warming plate and described graphite heat conducting block, to support fixing described graphite heat conducting block.
Wherein, the thickness of described warming plate is 30 ~ 60mm.
The polycrystalline silicon ingot casting thermal field structure that the utility model provides is by arranging one layer of heat preservation plate in the bottom of heat-insulation cage, instead of the design of the two-layer warming plate of existing employing, intercept the heat of well heater directly to warming plate radiation simultaneously, thus the temperature in the heat preservation zone that formed between warming plate and graphite heat conducting block can be made to be unlikely too high, thus the seed crystal of crucible bottom can be prevented all to melt, and then ensure that crucible bottom can remain the seed crystal of thin layer, thus silicon liquid seeding on seed crystal can be made.In addition, can be convenient to dispel the heat downwards from vertical direction owing to arranging one layer of heat preservation plate, thus without the need to opening the aperture of heat-insulation cage in the fusion stage, thus can energy efficient, reduce costs, improve the thermograde in vertical direction simultaneously, accelerate the speed of crystallization.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the polycrystalline silicon ingot casting thermal field structure that the utility model embodiment provides.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described.
Refer to Fig. 1, a kind of polycrystalline silicon ingot casting thermal field structure 100 that the utility model embodiment provides, comprise body of heater (not identifying in figure), heat-insulation cage 10, graphite heat conducting block 20 and well heater 30, described heat-insulation cage 10 is contained in described body of heater, described heat-insulation cage 10 comprises one layer of heat preservation plate 11 and two side 12, and described warming plate 11 is positioned at the bottom of described heat-insulation cage 10.Described two side 12 is provided with the first heat insulating strip 121, described first heat insulating strip 121 is positioned at the top of described warming plate 11.Described graphite heat conducting block 20 is accommodated and is fixed in described heat-insulation cage 10, and has a gap with described warming plate 11, forms heat preservation zone 21 between described warming plate 11, first heat insulating strip 121 and described graphite heat conducting block 20.Described well heater 30 is fixedly contained in described heat-insulation cage 10, and described well heater 30 is covered in above described graphite heat conducting block 20.
The polycrystalline silicon ingot casting thermal field structure 100 that the utility model provides, by arranging warming plate 11 described in one deck in the bottom of described heat-insulation cage 10, thus in long brilliant process, the temperature of heat preservation zone 21 can be reduced, thus can prevent because temperature is too high and cause the silicon material in crucible to be all melted, ensure that crucible bottom can be coated with the silicon material of thin layer all the time, instead of the design of the two-layer warming plate of existing employing, thus without the need to increase heat-insulation cage 10 aperture to increase radiating effect, reduce energy consumption also save cost.
In the present embodiment, described body of heater can be barrel-shaped, comprises a host cavity, in order to accommodate described heat-insulation cage 10.
Described body of heater can offer ventilating pit, and described ventilating pit extends in described heat-insulation cage 10, in order to be discharged outside described body of heater by the high-temperature steam in described heat-insulation cage 10 along the outside of described body of heater.
Described heat-insulation cage 10 is accommodated and is fixed in the host cavity of described body of heater, and described heat-insulation cage 10 comprises described warming plate 11 and two side 12.In the present embodiment, described warming plate 11 is square plate, and described warming plate 11 is positioned at the bottom of described heat-insulation cage 10.Particularly, the thickness of described warming plate 11 is 30 ~ 60mm, and preferably, the thickness of described warming plate 11 is 45mm, to ensure that it can be convenient to heat radiation, thus when the fusion stage of polysilicon, due to the thinner thickness of described warming plate 11, and described warming plate 11 is one deck, so heat can be reduced to be gathered in the bottom of polysilicon, the heat accelerating polysilicon bottom distributes, thus polysilicon can be prevented to melt completely, and then is convenient to follow-up long crystalline substance.
In the present embodiment, the material of described two first heat insulating strips 121 is the hard felt of graphite, thus ensures that it can have good high temperature resistant resistance toheat.Described two first heat insulating strips 121 are square lumphy structure, and described first heat insulating strip 121 is positioned at above described warming plate 11.
Further, described two side 12 is also provided with the second heat insulating strip 122, described second heat insulating strip 122 is positioned on described first heat insulating strip 121, and the upper surface of described second heat insulating strip 122 flushes with the bottom of described graphite heat conducting block 20.In the present embodiment, described second heat insulating strip 122 is identical with the material of described first heat insulating strip 121, is the hard felt of graphite.Described second heat insulating strip 122 is stacked on described first heat insulating strip 121, thus can reduce when melt stage and long brilliant stage, and heat from the problem of described two side 12 loss, and then can reduce energy consumption.
In order to improve further, described polycrystalline silicon ingot casting thermal field structure 100 also comprises three pillar stiffeners, 40, three described pillar stiffeners 40 and is connected between described warming plate 11 and described graphite heat conducting block 20, to support fixing described graphite heat conducting block 20.In the present embodiment, the two ends of described three pillar stiffeners 40 extend to described graphite heat conducting block 20 from described warming plate 11 respectively, and in order to ensure its support performance, described three pillar stiffeners 40 are made by high temperature material.
It is inner that described graphite heat conducting block 20 is located at described heat-insulation cage 10.In the present embodiment, described graphite heat conducting block 20 is stepped appearance lumphy structure.In order to place crucible 50 on described graphite heat conducting block 20, described crucible 50 is in order to hold polycrystalline silicon raw material.Described graphite heat conducting block 20 can by bottom the heat conduction in described body of heater to described crucible 50.
Further, the both sides of described graphite heat conducting block 20 are provided with the 3rd heat insulating strip 22, between described 3rd heat insulating strip 22 and described second heat insulating strip 122 and described warming plate 11, form described heat preservation zone 21.In the present embodiment, described 3rd heat insulating strip 22 is square article, and the material of described 3rd heat insulating strip 22 is the hard felt of graphite, to ensure its high temperature resistant and resistance toheat.
Described 3rd heat insulating strip 22 is positioned at the both sides of described graphite heat conducting block 20, distributes from the both sides of described graphite heat conducting block 20 to reduce heat.Particularly, the lower surface of described 3rd heat insulating strip 22 and the upper surface flush of described second heat insulating strip 122, namely the described lower surface of the 3rd heat insulating strip 22 and the lower surface of described graphite heat conducting block 20 are positioned at same straight line, by the heat-blocking action of described 3rd heat insulating strip 22 with described second heat insulating strip 122, thus can prevent heat from distributing between described 3rd heat insulating strip 22 and described second heat insulating strip 122, form described heat preservation zone 21, due to the heat-blocking action of described 3rd heat insulating strip 22 and the second heat insulating strip 122, thus heat can be reduced distribute from the side of described heat-insulation cage 10, and then minimizing thermal losses, thus make the long brilliant stage at polysilicon, heat can accumulate in graphite heat conducting block 20 and heat-insulation cage 10 sidewall, improve the thermograde of the longitudinal direction of described polycrystalline silicon ingot casting thermal field structure 100 simultaneously, and then without the need to increasing the aperture of heat-insulation cage 10, so can energy consumption be reduced, reduce production cost.
Further, have a difference of altitude between the upper surface of described second heat insulating strip 122 and the lower surface of described 3rd heat insulating strip 22, the scope of described difference of altitude can be 0 ~ 20mm, thus can block described 3rd heat insulating strip 22, prevents heat from distributing further.Preferably, described difference of altitude is 10mm.
In order to improve further, the material of described crucible 50 is quartz sand, and to ensure that it is hard, wear resistance and thermotolerance, make when heating, the chemical property of described crucible 50 can not change.Certainly, in other embodiments, the material of described crucible 50 also can be clay, china clay or graphite etc.
In the present embodiment, the inwall of described crucible 50 applies one deck silicon nitride coating, to strengthen the hardness of the inwall of described crucible 50, resistance to elevated temperatures and wear resisting property further, to prevent in high-temperature heating process, inwall and the described polycrystalline silicon raw material of described crucible 50 react and affect the quality of the polysilicon crystal of generation.Certainly, in other embodiments, also can coated ceramic coating on the inwall of crucible 50.
In addition, in order to further improvement, the top of described crucible 50 also can cover a cover plate (not identifying in figure), described ventilating pit extends to described cover plate along the outside of described body of heater, and stretch in described crucible 50, so that the high-temperature steam in described crucible 50 is discharged outside described body of heater in time.Particularly, the material of described cover plate is high strength carbon carbon fiber, to ensure its high temperature resistant and wear resistance.Described cover plate is used for the opening end closing described crucible 50, so that when heating, while heat not easily distributes from opening end, impurity not easily enters from opening part, thus it is inner to make heat concentrate on described crucible 50, and improves ingot quality further.
Described well heater 30 is covered in above described graphite heat conducting block 20, and described well heater 30 encloses outside described crucible 50.In the present embodiment, described well heater 30 is connected with the top board 23 of described heat-insulation cage 10, and described well heater 30 is positioned at described high-temperature zone 21, thus described high-temperature zone 21 can be made to continue to keep high temperature.Particularly, described well heater 30 comprises hot-plate 31 and heat block 32.Described hot-plate 31 is connected with the top board of described heat-insulation cage.Described hot-plate 31 relatively described crucible 50 opening end is arranged.Described heat block 32 is fixed on described hot-plate 31 periphery, and is positioned at described crucible 50 weeks sides.Described hot-plate 31 heats described crucible 50 opening end, and described heat block 32 is to the side heating in 50 weeks of described crucible.
The polycrystalline silicon ingot casting thermal field structure that the utility model provides is by arranging one layer of heat preservation plate in the bottom of heat-insulation cage, instead of the design of the two-layer warming plate of existing employing, intercept the heat of well heater directly to warming plate radiation simultaneously, thus the temperature in the heat preservation zone that formed between warming plate and graphite heat conducting block can be made to be unlikely too high, thus the seed crystal of crucible bottom can be prevented all to melt, and then ensure that crucible bottom can remain the seed crystal of thin layer, thus silicon liquid seeding on seed crystal can be made.In addition, can be convenient to dispel the heat downwards from vertical direction owing to arranging one layer of heat preservation plate, thus without the need to opening the aperture of heat-insulation cage in the fusion stage, thus can energy efficient, reduce costs, improve the thermograde in vertical direction simultaneously, accelerate the speed of crystallization.
The above is preferred embodiment of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection domain of the present utility model.
Claims (10)
1. a polycrystalline silicon ingot casting thermal field structure, it is characterized in that, described polycrystalline silicon ingot casting thermal field structure comprises body of heater, heat-insulation cage, graphite heat conducting block and well heater, described heat-insulation cage is accommodated and is fixed in described body of heater, described heat-insulation cage comprises one layer of heat preservation plate and two side, described warming plate is positioned at the bottom of described heat-insulation cage, described two side is provided with the first heat insulating strip, described first heat insulating strip is positioned at above described warming plate, described graphite heat conducting block is accommodated and is fixed in described heat-insulation cage, and with described warming plate, there is a spacing, described warming plate, heat preservation zone is formed between described first heat insulating strip and described graphite heat conducting block, described well heater is fixedly contained in described heat-insulation cage, and described well heater is covered in above described graphite heat conducting block.
2. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, described warming plate is square plate.
3. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, in order to place crucible on described graphite heat conducting block, described crucible is in order to hold polycrystalline silicon raw material, and described well heater encloses outside described crucible.
4. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, the two side of described heat-insulation cage is also provided with the second heat insulating strip, and described second heat insulating strip is positioned on described first heat insulating strip, and the upper surface of described second heat insulating strip flushes with the bottom of described graphite heat conducting block.
5. polycrystalline silicon ingot casting thermal field structure as claimed in claim 4, is characterized in that, the both sides of described graphite heat conducting block are provided with the 3rd heat insulating strip, forms described heat preservation zone between described 3rd heat insulating strip and described second heat insulating strip and described warming plate.
6. the polycrystalline silicon ingot casting thermal field structure as described in claim 4 or 5, is characterized in that, the lower surface of described 3rd heat insulating strip and the upper surface flush of described second heat insulating strip.
7. the polycrystalline silicon ingot casting thermal field structure as described in claim 4 or 5, is characterized in that, have difference of altitude between the upper surface of described second heat insulating strip and the lower surface of described 3rd heat insulating strip, the scope of described difference of altitude is 0 ~ 20mm.
8. polycrystalline silicon ingot casting thermal field structure as claimed in claim 6, it is characterized in that, the material of described first heat insulating strip, the second heat insulating strip and the 3rd heat insulating strip is the hard felt of graphite.
9. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, described polycrystalline silicon ingot casting thermal field structure also comprises three pillar stiffeners, and three described pillar stiffeners are connected between described warming plate and described graphite heat conducting block, to support fixing described graphite heat conducting block.
10. polycrystalline silicon ingot casting thermal field structure as claimed in claim 1, it is characterized in that, the thickness of described warming plate is 30 ~ 60mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201520619184.XU CN204849121U (en) | 2015-08-17 | 2015-08-17 | Polycrystalline silicon ingot casting thermal field structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520619184.XU CN204849121U (en) | 2015-08-17 | 2015-08-17 | Polycrystalline silicon ingot casting thermal field structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702486A (en) * | 2017-03-30 | 2017-05-24 | 韩华新能源科技有限公司 | High crystal quality polysilicon ingot thermal field |
| CN110041102A (en) * | 2019-05-27 | 2019-07-23 | 赛维Ldk太阳能高科技(新余)有限公司 | For protecting the composite coating and preparation method and ingot furnace thermal field structure of carbon material |
-
2015
- 2015-08-17 CN CN201520619184.XU patent/CN204849121U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702486A (en) * | 2017-03-30 | 2017-05-24 | 韩华新能源科技有限公司 | High crystal quality polysilicon ingot thermal field |
| CN110041102A (en) * | 2019-05-27 | 2019-07-23 | 赛维Ldk太阳能高科技(新余)有限公司 | For protecting the composite coating and preparation method and ingot furnace thermal field structure of carbon material |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151209 Termination date: 20210817 |
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| CF01 | Termination of patent right due to non-payment of annual fee |