JP2004323247A5 - - Google Patents
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- JP2004323247A5 JP2004323247A5 JP2003115967A JP2003115967A JP2004323247A5 JP 2004323247 A5 JP2004323247 A5 JP 2004323247A5 JP 2003115967 A JP2003115967 A JP 2003115967A JP 2003115967 A JP2003115967 A JP 2003115967A JP 2004323247 A5 JP2004323247 A5 JP 2004323247A5
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- melt
- temperature gradient
- single crystal
- furnace
- melt surface
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【請求項１】 黒鉛るつぼ内のＳｉ融液内に内部から融液面へ向けて温度低下する温度勾配を維持しつつ、該融液面の直下に保持したＳｉＣ種結晶を起点としてＳｉＣ単結晶を成長させる炉において、
該融液面の直上を、該融液面から３０ｍｍ以下の間隔で配置した黒鉛カバーで覆って断熱したことを特徴とするＳｉＣ単結晶製造炉。
1. A SiC single crystal starting from a SiC seed crystal held immediately below a melt surface of a Si melt in a graphite crucible while maintaining a temperature gradient from the inside toward the melt surface in the Si melt. In a furnace that grows
Just above the melting liquid surface, SiC single crystal production furnace, characterized in that the thermal insulation is covered with a graphite cover arranged at intervals of less than 30mm from the melting liquid surface.
【０００６】
【課題を解決するための手段】
上記の目的を達成するために、本発明によるＳｉＣ単結晶製造炉は、黒鉛るつぼ内のＳｉ融液内に内部から融液面へ向けて温度低下する温度勾配を維持しつつ、該融液面の直下に保持したＳｉＣ種結晶を起点としてＳｉＣ単結晶を成長させる炉において、
該融液面の直上を、該融液面から３０ｍｍ以下の間隔で配置した黒鉛カバーで覆って断熱したことを特徴とする。
[0006]
[Means for Solving the Problems]
In order to achieve the above object, an SiC single crystal manufacturing furnace according to the present invention is capable of maintaining a temperature gradient in an Si melt in a graphite crucible from the inside toward the melt surface while maintaining the temperature gradient. In a furnace for growing a SiC single crystal starting from a SiC seed crystal held immediately below
Just above the melting liquid surface, covered with a graphite cover arranged at intervals of less than 30mm from the melting liquid surface, characterized in that the thermal insulation.
【０００７】
【発明の実施の形態】
本発明においては、Ｓｉ融液面の直上を、該融液面から３０ｍｍ以下の間隔で配置した黒鉛カバーで覆って断熱したことにより、融液面からの放熱が抑制され、その結果、特に種結晶の保持されている融液面直下領域での温度勾配が緩和され、それに伴い過飽和度が緩和されて、結晶核の多発による多結晶化が防止される。
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
In the present invention, the immediately above the Si melt surface, by the thermal insulation is covered with a graphite cover arranged at intervals of less than 30mm from the melting liquid surface, the heat radiation from the melt surface is suppressed, as a result, especially The temperature gradient in the region immediately below the melt surface where the seed crystal is held is alleviated, and the degree of supersaturation is alleviated accordingly, so that polycrystallization due to multiple generation of crystal nuclei is prevented.
図示したＳｉＣ単結晶製造炉１００は、黒鉛るつぼ１０内のＳｉ融液Ｍ内に内部から融液面Ｓへ向けて温度低下する温度勾配を維持しつつ、融液面Ｓの直下に黒鉛棒１２により保持したＳｉＣ種結晶１４を起点としてＳｉＣ単結晶を成長させる炉であり、その特徴として、融液面の直上を黒鉛カバーから成る断熱カバー１６で覆ってある。 The illustrated SiC single crystal manufacturing furnace 100 maintains the temperature gradient in the Si melt M in the graphite crucible 10 from the inside toward the melt surface S while maintaining the temperature gradient of the graphite rod 12 directly below the melt surface S. by a furnace for growing a SiC single crystal starting from the SiC seed crystal 14 held, as its features, are covering directly above the melt surface with an insulating cover 16 made et or graphite cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003115967A JP4265269B2 (en) | 2003-04-21 | 2003-04-21 | SiC single crystal manufacturing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003115967A JP4265269B2 (en) | 2003-04-21 | 2003-04-21 | SiC single crystal manufacturing furnace |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004323247A JP2004323247A (en) | 2004-11-18 |
| JP2004323247A5 true JP2004323247A5 (en) | 2006-05-18 |
| JP4265269B2 JP4265269B2 (en) | 2009-05-20 |
Family
ID=33496363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003115967A Expired - Fee Related JP4265269B2 (en) | 2003-04-21 | 2003-04-21 | SiC single crystal manufacturing furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4265269B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4736401B2 (en) * | 2004-11-02 | 2011-07-27 | 住友金属工業株式会社 | Method for producing silicon carbide single crystal |
| JP4830496B2 (en) * | 2006-01-12 | 2011-12-07 | トヨタ自動車株式会社 | Method for producing SiC single crystal |
| JP5304600B2 (en) * | 2009-11-09 | 2013-10-02 | トヨタ自動車株式会社 | SiC single crystal manufacturing apparatus and manufacturing method |
| JP5439353B2 (en) * | 2010-12-27 | 2014-03-12 | 新日鐵住金株式会社 | SiC single crystal manufacturing apparatus and crucible used therefor |
| JP5517913B2 (en) | 2010-12-27 | 2014-06-11 | 新日鐵住金株式会社 | SiC single crystal manufacturing apparatus, jig used in the manufacturing apparatus, and SiC single crystal manufacturing method |
| JP5528396B2 (en) | 2011-06-20 | 2014-06-25 | 新日鐵住金株式会社 | SiC single crystal manufacturing apparatus by solution growth method, SiC single crystal manufacturing method using the manufacturing apparatus, and crucible used in the manufacturing apparatus |
| JP5801730B2 (en) * | 2012-01-20 | 2015-10-28 | トヨタ自動車株式会社 | Seed crystal holding shaft used in single crystal manufacturing apparatus and single crystal manufacturing method |
| JP6424806B2 (en) * | 2015-12-01 | 2018-11-21 | トヨタ自動車株式会社 | Method of manufacturing SiC single crystal |
-
2003
- 2003-04-21 JP JP2003115967A patent/JP4265269B2/en not_active Expired - Fee Related
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