CN204130514U - Wafer bearing device - Google Patents
Wafer bearing device Download PDFInfo
- Publication number
- CN204130514U CN204130514U CN201420459468.2U CN201420459468U CN204130514U CN 204130514 U CN204130514 U CN 204130514U CN 201420459468 U CN201420459468 U CN 201420459468U CN 204130514 U CN204130514 U CN 204130514U
- Authority
- CN
- China
- Prior art keywords
- wafer
- bearing device
- metal dish
- insulating disc
- wafer bearing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 14
- 241000278713 Theora Species 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A kind of wafer bearing device, be arranged at a crystal round etching equipment, this crystal round etching equipment comprises the lifting shaft that a chamber and is positioned at this chamber, and this wafer bearing device comprises an insulating disc, a metal dish and a dead ring.This insulating disc is arranged on this lifting shaft; This metal dish is arranged at for carrying one wafer on this insulating disc, and the middle body and that this metal dish has this wafer of carrying extends outwardly from this middle body and exceeds the periphery of this wafer; This dead ring is arranged on this metal dish, and covers this periphery and have downward-extension and the ora terminalis of this metal dish outstanding on one day.Wherein, this insulating disc at least covers a central bottom surface of this middle body and and has a spacing being less than 1 centimeter between this ora terminalis.Accordingly, the utility model prevents the strike being subject to a plasma below this metal dish, extends its useful life.
Description
Technical field
The utility model relates to a kind of semiconductor manufacturing equipment, particularly relates to a kind of in order to carry the wafer bearing device of wafer (disk).
Background technology
In semiconductor processing, often need by an etch process, carry out processing to form a pattern structure on a crystal column surface, wherein, dry-etching is engraving method the most frequently used at present, and it using argon gas as main etching medium, and drives reaction by energy of plasma.
This wafer of existing confession carries out a crystal round etching equipment of this etch process, as in No. M260862nd, TaiWan, China new patent disclose, this wafer is be carried on the wafer bearing device in this crystal round etching equipment, this wafer bearing device is provided with one first insulating disc on the main lifting shaft top of a wafer elevating unit, a metal support disk is provided with in the top of this first insulating disc, one second insulating disc is provided with again in the top of this metal support disk, separately there is a bolt in order to by this second insulating disc, this metal support disk and the locking of this first insulating disc are on the top of this main lifting shaft, and the electrode of conducting metal support disk, by the second insulating disc, metal support disk is covered to the structure kenel being unlikely and exceeding wafer periphery, metal support disk is avoided to be subject to plasma struck, to guarantee the integrality of the second insulating disc.
But, this above-mentioned wafer bearing device, although the top of this metal support disk is covered by this second insulating disc, damage to avoid this metal support disk to be subject to the strike of plasma, but the below of this metal support disk, is but also exposed among this plasma, still the possibility being subjected to this plasma struck is had, and the necessity be improved.
Utility model content
Main purpose of the present utility model, be to solve this wafer bearing device existing, the below of its metal support disk, is exposed among a plasma, and has and be easily subject to plasma struck and the problem of damaging.
For reaching above-mentioned purpose, the utility model provides a kind of wafer bearing device, is arranged at a crystal round etching equipment, and this crystal round etching equipment includes the lifting shaft that a chamber and is arranged at this chamber, and this wafer bearing device includes:
One is arranged at the insulating disc on this lifting shaft;
One is arranged at the metal dish for carrying one wafer on this insulating disc, and the middle body and that this metal dish has this wafer of carrying extends outwardly from this middle body and exceeds the periphery of this wafer; And
One is arranged at the dead ring on this metal dish, and this dead ring covers this periphery and has downward-extension and the ora terminalis of this metal dish outstanding on one day;
Wherein, this insulating disc at least covers a central bottom surface of this middle body and and has a spacing being less than 1 centimeter between this ora terminalis.
Above-mentioned wafer bearing device, wherein has location hole corresponding to multiple position between this metal dish with this insulating disc, and multiple keeper correspondence penetrates this location hole insulating disc and this metal dish is mutually located.
Above-mentioned wafer bearing device, wherein has perforation corresponding to multiple position between this metal dish with this insulating disc, this perforation is respectively equipped with a wafer this wafer being ejected this wafer bearing device and ejects axle.
Above-mentioned wafer bearing device, wherein has a height fall between this periphery and this middle body and forms a low stratum covered for this dead ring.
Above-mentioned wafer bearing device, wherein this crystal round etching equipment comprises the quartzy bowl lid of this chamber of sealing and a pair and should seal the upper cover of this chamber by quartzy bowl lid.
Above-mentioned wafer bearing device, wherein this metal dish and this insulating disc are for be fixed on this lifting shaft by a bolt lock.
Above-mentioned wafer bearing device, wherein this dead ring also has a upwardly location division for this wafer slippage of block.
Above-mentioned wafer bearing device, wherein the material of this metal dish is stainless steel, gold, silver, iron, tungsten or aluminium.
Above-mentioned wafer bearing device, wherein the material of this insulating disc is ceramic material, graphite or quartz.
Above-mentioned wafer bearing device, wherein the material of this dead ring is quartz or ceramic material.
Thus; the utility model covers this central bottom surface by arranging this insulating disc; make this insulating disc protect the below of this metal dish, prevent the below of this metal dish be subject to the strike of this plasma and cause this metal dish to damage, extend the useful life of this wafer bearing device.
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail, but not as to restriction of the present utility model.
Accompanying drawing explanation
Fig. 1 is the stereoscopic schematic diagram of the utility model one embodiment;
Fig. 2 is the decomposing schematic representation of the utility model one embodiment;
Fig. 3 is the cross-sectional schematic of the utility model one embodiment;
Fig. 4 is the cross-sectional schematic of another embodiment of the utility model.
Embodiment
Relevant detailed description of the present utility model and technology contents, the existing accompanying drawing that just coordinates is described as follows:
Please arrange in pairs or groups and consult shown in Fig. 1 to Fig. 3, Fig. 1 is the stereoscopic schematic diagram of the utility model one embodiment, Fig. 2 is the decomposing schematic representation of the utility model one embodiment, Fig. 3 is the cross-sectional schematic of the utility model one embodiment, as shown in the figure, the utility model is a kind of wafer bearing device 10, be arranged among a crystal round etching equipment 1, this crystal round etching equipment 1 includes a chamber 4, one quartzy bowl lid 2, one upper cover 3 and a lifting shaft 5, this chamber 4 is inserted for a wafer 20, this lifting shaft 5 is arranged in this chamber 4, and there is the distribution 8 that one and one negative electrode is electrically connected, this quartzy bowl lid 2 opening of being covered on this chamber 4 corresponding to this upper cover 3, and seal this chamber 4, this upper cover 3 is also arranged with the radio-frequency coil 7 becoming a positive electrode, this positive electrode this negative electrode of arranging in pairs or groups is powered and produces a plasma in this chamber 4.
This wafer bearing device 10 includes insulating disc 11, metal dish 12 and a dead ring 13.This insulating disc 11 is arranged on this lifting shaft 5, this metal dish 12 is arranged on this insulating disc 11, for this wafer 20 of carrying, and this metal dish 12 has middle body 121 and a periphery 122, this middle body 121 carries this wafer 20, this middle body 121 has a central bottom surface 1211 in the side away from this wafer 20, this periphery 122 extends outwardly from this middle body 121 and exceeds this wafer 20, and between this periphery 122 and this middle body 121, there is a height fall, make this periphery 122 compare this middle body 121 and form a low stratum.
In the present embodiment, this metal dish 12 and this insulating disc 11, for being locked on this lifting shaft 5 by a bolt 17, this metal dish 12 is also electrically connected with this negative electrode via this bolt 17 and the connection of this distribution 8.As between this insulating disc 11 and this metal dish 12, then there is location hole corresponding to multiple position 14, utilize multiple keeper 15 correspondence to penetrate this location hole 14, this metal dish 12 correspondence is positioned on this insulating disc 11.In addition, be noted that, also there is between this insulating disc 11 with this metal dish 12 perforation corresponding to multiple position 16, this perforation 16 is respectively equipped with a wafer and ejects axle 6, this wafer ejects axle 6 can pass this perforation 16, passes and supports this wafer 20, make this wafer 20 depart from the carrying of this wafer bearing device 10 from this metal dish 12, facilitate a mechanical arm from this crystal round etching equipment 1, shift out, this wafer 20 to meet automatic processing technology.
This dead ring 13 is arranged on this metal dish 12, and covers this periphery 122, and has downward-extension and the ora terminalis 131 of this metal dish 12 outstanding on one day.In the present embodiment, this dead ring 13 is covered in this periphery 122, flush with this middle body 121 of this metal dish 12 by this periphery 122 forms low order layer, this wafer 20 is made to be able to firm this middle body 121 that is carried on on this dead ring 13, this metal dish 12 of this dead ring 13 shielding, not by this periphery 122 that this wafer 20 covers, avoids this periphery 122 to be subject to the strike of this plasma.
What illustrate is; in the utility model; this insulating disc 11 is below this metal dish 12; at least cover this central bottom surface 1211 of this middle body 121; and and this dead ring 13 give prominence between this ora terminalis 131 of this metal dish 12, there is an interval S being less than 1 centimeter, this interval S be defined herein as between this dead ring 13 and this insulating disc 11 in make arrange in pairs or groups on issuable admissible error; this interval S is less, and this insulating disc 11 is then better for the protected effect below this metal dish 12.And in another embodiment of the present utility model, as shown in Figure 4, for the cross-sectional schematic of another embodiment of the utility model, in this embodiment, this dead ring 13 also can have a location division 132, this location division 132 is positioned at this dead ring 13 side contrary with this ora terminalis 131 and upwardly, according to and correct position can be positioned at avoid this wafer 20 slippage by this wafer 20 of block.
In addition, in the utility model, this metal dish 12 material in this case uses stainless steel, the material of this insulating disc 11 in this case uses ceramic material, the material of this dead ring 13 in this case uses quartz, but not as restriction, the material of this metal dish 12 also can be gold, silver, iron, tungsten or aluminium, the material of this insulating disc 11 also can be graphite or quartz, and the material of this dead ring 13 also can be pottery.
In sum; because the utility model covers this central bottom surface by arranging this insulating disc; between this ora terminalis making this insulating disc and this dead ring; only there is this spacing less than 1 centimeter; this insulating disc of this order protects the below of this metal dish; prevent the below of this metal dish be subject to the strike of this plasma and cause this metal dish to damage, extend the useful life of this wafer bearing device.
Certainly; the utility model also can have other various embodiments; when not deviating from the utility model spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the utility model, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the utility model.
Claims (10)
1. a wafer bearing device, is arranged at a crystal round etching equipment, and this crystal round etching equipment includes the lifting shaft that a chamber and is arranged at this chamber, it is characterized in that, this wafer bearing device includes:
One is arranged at the insulating disc on this lifting shaft;
One is arranged at the metal dish for carrying one wafer on this insulating disc, and the middle body and that this metal dish has this wafer of carrying extends outwardly from this middle body and exceeds the periphery of this wafer; And
One is arranged at the dead ring on this metal dish, and this dead ring covers this periphery and has downward-extension and the ora terminalis of this metal dish outstanding on one day;
Wherein, this insulating disc at least covers a central bottom surface of this middle body and and has a spacing being less than 1 centimeter between this ora terminalis.
2. wafer bearing device according to claim 1, is characterized in that, has location hole corresponding to multiple position between this metal dish with this insulating disc, and multiple keeper correspondence penetrates this location hole insulating disc and this metal dish is mutually located.
3. wafer bearing device according to claim 1, is characterized in that, has perforation corresponding to multiple position between this metal dish with this insulating disc, and this perforation is respectively equipped with a wafer this wafer being ejected this wafer bearing device and ejects axle.
4. wafer bearing device according to claim 1, is characterized in that, has a height fall and form a low stratum covered for this dead ring between this periphery and this middle body.
5. wafer bearing device according to claim 1, is characterized in that, this crystal round etching equipment comprises the quartzy bowl lid of this chamber of sealing and a pair should seal the upper cover of this chamber by quartzy bowl lid.
6. wafer bearing device according to claim 1, is characterized in that, this metal dish and this insulating disc are for be fixed on this lifting shaft by a bolt lock.
7. wafer bearing device according to claim 1, is characterized in that, this dead ring also has a upwardly location division for this wafer slippage of block.
8. wafer bearing device according to claim 1, is characterized in that, the material of this metal dish is stainless steel, gold, silver, iron, tungsten or aluminium.
9. wafer bearing device according to claim 1, is characterized in that, the material of this insulating disc is ceramic material, graphite or quartz.
10. wafer bearing device according to claim 1, is characterized in that, the material of this dead ring is quartz or ceramic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420459468.2U CN204130514U (en) | 2014-08-14 | 2014-08-14 | Wafer bearing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420459468.2U CN204130514U (en) | 2014-08-14 | 2014-08-14 | Wafer bearing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204130514U true CN204130514U (en) | 2015-01-28 |
Family
ID=52386841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420459468.2U Expired - Fee Related CN204130514U (en) | 2014-08-14 | 2014-08-14 | Wafer bearing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204130514U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108206153A (en) * | 2016-12-16 | 2018-06-26 | 台湾积体电路制造股份有限公司 | Wafer bearing device and semiconductor equipment |
-
2014
- 2014-08-14 CN CN201420459468.2U patent/CN204130514U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108206153A (en) * | 2016-12-16 | 2018-06-26 | 台湾积体电路制造股份有限公司 | Wafer bearing device and semiconductor equipment |
| CN108206153B (en) * | 2016-12-16 | 2021-02-09 | 台湾积体电路制造股份有限公司 | Wafer bearing device and semiconductor equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150128 Termination date: 20170814 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |