CN108206153A - Wafer bearing device and semiconductor equipment - Google Patents
Wafer bearing device and semiconductor equipment Download PDFInfo
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- CN108206153A CN108206153A CN201611169532.3A CN201611169532A CN108206153A CN 108206153 A CN108206153 A CN 108206153A CN 201611169532 A CN201611169532 A CN 201611169532A CN 108206153 A CN108206153 A CN 108206153A
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- wafer
- electrode plate
- bearing device
- storage tank
- susceptor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
A kind of wafer bearing device and semiconductor equipment, wafer bearing device electrically isolate element including a driving mechanism, a wafer susceptor and one.Driving mechanism is coupled to a ground voltage.Wafer susceptor is set in driving mechanism, and including a storage tank, to place a wafer.It electrically isolates element to be set on wafer susceptor, the charge between wafer and ground voltage to be inhibited to flow.
Description
Technical field
This exposure relates generally to a kind of wafer bearing device and semiconductor equipment, and espespecially one kind, which has, electrically isolates element
Wafer bearing device and with plasma device semiconductor equipment.
Background technology
Semiconductor device has been used in a variety of applications electronically, for example, PC, mobile phone, digital camera and other
Electronic equipment.Semiconductor device is substantially sequentially via depositing insulating layer or dielectric layer, the material of conductive layer and semiconductor layer
It is manufactured thereon to a wafer and using lithographic techniques patterning various material layers to form circuit element and element.
Many integrated circuits are generally manufactured in a single wafer, and the last other crystal grain of wafer between integrated circuit along a cutting line
It is cut separation.For example, a other crystal grain substantially by respectively be packaged in a multi-chip module or other kinds of
Encapsulation.
In atomic layer deposition (Atomic layer deposition) technique, will the first predecessor be first deposited on crystalline substance
On circle, the second predecessor is deposited on the first predecessor later, and is combined by the first predecessor and the second predecessor
With in forming a film on wafer.Since the thickness of above-mentioned film is smaller than physical vapour deposition (PVD) (PVD) or chemical vapor deposition
(CVD) thickness of the film formed, therefore atom layer deposition process is gradually applied in advanced semiconductor technology.
Although current atom layer precipitation equipment has met general purpose, without meet aspect.Therefore, it is necessary to
A kind of improvement project of apparatus for atomic layer deposition is provided.
Invention content
This exposure provides a kind of wafer bearing device, is electrically isolated including a driving mechanism, a wafer susceptor and one
Element.Driving mechanism is coupled to a ground voltage.Wafer susceptor is set in driving mechanism, and including a storage tank, to put
Put a wafer.It electrically isolates element to be set on wafer susceptor, the charge between wafer and ground voltage to be inhibited to flow.
This exposure provides a kind of semiconductor equipment, including a driving mechanism, a wafer susceptor, one electrically isolate element with
An and plasma device.Driving mechanism is coupled to a ground voltage.Wafer susceptor is set in driving mechanism.Wafer susceptor packet
Multiple storage tanks are included, to place multiple wafers.It electrically isolates element to be set on wafer susceptor, to inhibit wafer and ground connection
Charge flowing between voltage.
Description of the drawings
Fig. 1 is the schematic diagram according to the semiconductor equipment of some embodiments of this exposure.
Fig. 2 is the vertical view according to the semiconductor equipment of some embodiments of this exposure.
Fig. 3 is the vertical view according to the wafer susceptor of some embodiments of this exposure.
Fig. 4 is the flow chart according to the atom layer deposition process of some embodiments of this exposure.
Fig. 5 is the schematic diagram according to the semiconductor equipment of some embodiments of this exposure.
Fig. 6 is the schematic diagram according to the semiconductor equipment of some embodiments of this exposure.
Fig. 7 is according to the schematic diagram of the wafer bearing device of some embodiments of this exposure.
Fig. 8 is according to the schematic diagram of the wafer bearing device of some embodiments of this exposure.
Fig. 9 is according to the schematic diagram of the wafer bearing device of some embodiments of this exposure.
Figure 10 is according to the schematic diagram of the wafer bearing device of some embodiments of this exposure.
Wherein, the reference numerals are as follows：
Driving mechanism 10
Wafer susceptor 20
Axle portion 21
Carrier 22
Lower surface 221
Upper surface 222
Storage tank 23
Bottom surface 231
It is spaced projection 24
Electrically isolate element 30
It is spaced projection 31
Semiconductor equipment A1
Wafer bearing device A2
Processing unit A3
Rotary shaft AX1
Precipitation equipment B10
Processing chamber housing B11
Deposition gases distribution apparatus B12
It is distributed ontology B121
Channel B122
Air inlet B123
Outlet B124
Upper surface B125
Lower surface B126
First gas feeding mechanism B13
Second gas feeding mechanism B14
Remove device B20
Processing chamber housing B21
Remove distribution device in gas-fluid B22
It is distributed ontology B221
Channel B222
Air inlet B223
Outlet B224
Upper surface B225
Lower surface B226
Remove gas supply device B23
Plasma device B30
Processing chamber housing B31
Plasma gas distribution apparatus B32
It is distributed ontology B321
Channel B322
Air inlet B323
Outlet B324
Upper surface B325
Lower surface B326
First electrode plate B33
First through hole B331
Second electrode plate B34
Second through-hole B341
Radio-frequency unit B35
R-f generator B351
Impedance matching element B352
Plasma gas feeding mechanism B36
Ground voltage VSS
Wafer W1
Upper surface W11
Lower surface W 12
Specific embodiment
The following description provides many different embodiments or example, for implementing the different characteristic of this exposure.With
The described element of lower specific examples and arrangement mode, expression this exposures for being only used for simplifying, only as an example, and is not to use
To limit this exposure.For example, the description of structure of the fisrt feature above a second feature includes the first and second spies
Between being in direct contact between sign or being set to the first and second features with another feature, so that the first and second features are simultaneously
It is not in direct contact.
In the spatially relevant vocabulary that this is used, such as above or below etc., only to one in simple description schema
Element or a feature relative to another elements or features relationship.Other than the orientation described in schema, it is included in different sides
Position uses or the device of operation.
This specification has continued to use identical element numbers and/or word in different examples.It is aforementioned continue to use only for
Simplify and clearly, being not offered as must be relevant between different embodiments and setting.
The first of this specification and second grade vocabulary, only as the purpose of clear interpretation, not corresponding to and
Limit the scope of the claims.In addition, the vocabulary such as fisrt feature and second feature, and non-limiting is identical or different feature.
Shape, size, thickness and inclined angle in schema may for clarity of illustration and not according to than
Example is drawn or is simplified, and only provides purposes of discussion.
It will be appreciated that in each step in the method for following examples, can before each step, later and its
Between increase additional step, and can be replaced, delete or move in some aforementioned steps.
Fig. 1 is the schematic diagram according to the semiconductor equipment device A 1 of some embodiments of this exposure.Fig. 2 is according to this exposure
Some embodiments semiconductor equipment A1 vertical view.Fig. 3 is the wafer susceptor 20 according to some embodiments of this exposure
Vertical view.
Semiconductor equipment A1 can be an atomic layer deposition apparatus, a plasma apparatus or an etching machines.In this implementation
In example, semiconductor equipment A1 is an atomic layer deposition apparatus.Atomic layer deposition apparatus is implementing an atomic layer deposition (Atomic
Layer deposition) technique is to a wafer W1.
Semiconductor equipment A1 includes a wafer bearing device A2 and multiple processing unit A3.Wafer bearing device A2 to
Carry multiple wafer W1.Processing unit A3 is set to the top of wafer bearing device A2.It is brilliant that each processing unit A3 can be located at one
The top of circle W1.As shown in Fig. 2, processing unit A3 is in can radial arrangement.In some embodiments, processing unit A3 justifies along one
Shape path permutations.
In some embodiments, processing unit A3 may include multiple precipitation equipment B10, multiple remove device B20 and more
A plasma device B30.Each precipitation equipment B10, remove device B20 and plasma device B30 are staggered.
In some embodiments, wafer bearing device A2 includes a driving mechanism 10 and a wafer susceptor 20.Driving machine
Structure 10 is coupled to a ground voltage VSS to rotate and/or lift wafer susceptor 20.Wafer susceptor 20 is set to driving machine
On structure 10, and to carry multiple wafer W1.Wafer susceptor 20 can have storage tank 23.Wafer W1 can be positioned over storage tank 23
It is interior.In some embodiments, driving mechanism 10 provides a pull of vacuum in the storage tank 23 of wafer susceptor 20, and using makes wafer W1
It is adsorbed in storage tank 23.
By rotating wafer pedestal 20, it may be such that wafer W1 sequentially passes through the lower section of multiple processing unit A3, use implementation
In multiple steps to wafer W1 of atom layer deposition process.
Fig. 4 is the flow chart according to the atom layer deposition process of some embodiments of this exposure.In step S101, by one
Wafer W1 is rotated to the lower section of precipitation equipment B10 (as shown in Figure 1), and precipitation equipment B10 deposits the first material to wafer
On W1.In some embodiments, above-mentioned first material can be dichlorosilane (Dichlorosilane, DCS, SiH2Cl2)。
In some embodiments, precipitation equipment B10 includes a processing chamber housing B11, a deposition gases distribution apparatus B12, one
A first gas feeding mechanism B13 and second gas feeding mechanism B14.
Processing chamber housing B11 is located at the top of wafer bearing device A2.Processing chamber housing B11 is in the sectional area pair in horizontal direction
It should be in the area of storage tank 23 and the area of wafer W1.When in other words, in technique progress, processing chamber housing B11 is not same
When positioned at the top of more than two storage tanks 23.
Deposition gases distribution apparatus B12 is set in processing chamber housing B11, and positioned at the top of wafer bearing device A2.It changes
Sentence is talked about, and deposition gases distribution apparatus B12 can be located at the top of a storage tank 23, but when during technique carries out, deposition gases
Distribution apparatus B12 is not simultaneously positioned at the top of more than two storage tanks 23.
Deposition gases distribution apparatus B12 can be a disk-like structure, and can be circle.Deposition gases distribution apparatus B12 includes
An one distribution ontology B121 and channel B122.Being distributed ontology B121 has air inlet B123 and multiple outlet B124.It is logical
Road B122 is connected to air inlet B123 and outlet B124.
In some embodiments, air inlet B123 is formed in the upper surface B125 of distribution ontology B121.Outlet B124 shapes
Into in the lower surface B126 of distribution ontology B121.Above-mentioned lower surface B126 is towards wafer bearing device A2.In some embodiments,
Outlet B124 is evenly distributed in the lower surface B126 of distribution ontology B121.
First gas feeding mechanism B13 is coupled to the air inlet B123 of distribution ontology B121.First gas feeding mechanism B13
To transmit the first material to deposition gases distribution apparatus B12.First material is input to deposition gases point via air inlet B123
In cloth apparatus B12, and discharged via channel B122 to outlet B124 in deposition gases distribution apparatus B12.
By deposition gases distribution apparatus B12 so that the first material can be distributed evenly in the upper surface W11 of wafer W1.
In step S103, in depositing second material to the first material.Above-mentioned second material can be ammonia (Ammonia).
The chemical formula of ammonia can be (NH3).As shown in Figure 1, second gas feeding mechanism B14 is coupled to the air inlet of distribution ontology B121
B123.Second gas feeding mechanism B14 is transmitting the second material to deposition gases distribution apparatus B12.Second material via into
Gas port B123 is input in deposition gases distribution apparatus B12, and is discharged via channel B122 to outlet B124 in deposition gases
Distribution apparatus B12.
By deposition gases distribution apparatus B12 so that the second material can be distributed evenly in the upper surface W11 of wafer W1.
In some embodiments, precipitation equipment B10 may not include second gas feeding mechanism B14.Second material is via another
One precipitation equipment is deposited to the first material on wafer W1.It is brilliant when the first material being intended in depositing second material to wafer W1
Circle bogey A2 moves wafer W1 to the lower section of above-mentioned another precipitation equipment.
In some embodiments, after on depositing first material to wafer W1, a removing technique can be carried out, to remove not
It is attached to the first material of wafer W1.
Fig. 5 is the schematic diagram according to the semiconductor equipment A1 of some embodiments of this exposure.It, will be above-mentioned in step S105
Wafer W1 rotate to the lower section of remove device B20 (as shown in Figure 5), it is extra that remove device B20 using one removes gas clean-up
The second material.In some embodiments, above-mentioned removing gas can be nitrogen (N2)。
In some embodiments, remove device B20 include a processing chamber housing B21, one remove distribution device in gas-fluid B22 and
One removes gas supply device B23.
Processing chamber housing B21 is located at the top of wafer bearing device A2.Processing chamber housing B21 is in the sectional area pair in horizontal direction
It should be in the area of wafer W1 and the area of storage tank 23.When in other words, in technique progress, processing chamber housing B21 is not same
When positioned at the top of more than two storage tanks 23.
It removes distribution device in gas-fluid B22 to be set in processing chamber housing B21, and positioned at the top of wafer bearing device A2.It changes
Sentence is talked about, and the top of a storage tank 23 can be located at by removing distribution device in gas-fluid B22, but remove distribution device in gas-fluid B22 not
Simultaneously positioned at the top of more than two storage tanks 23.
It can be a disk-like structure to remove distribution device in gas-fluid B22, and can be circle.Distribution device in gas-fluid B22 is removed to include
An one distribution ontology B221 and channel B222.Being distributed ontology B221 has air inlet B223 and multiple outlet B224.It is logical
Road B222 is connected to air inlet B223 and outlet B224.
In some embodiments, air inlet B223 is formed in the upper surface B225 of distribution ontology B221.Outlet B224 shapes
Into in the lower surface B326 of distribution ontology B221, above-mentioned lower surface B226 is towards wafer bearing device A2.In some embodiments,
Outlet B224 is evenly distributed in the lower surface B326 of distribution ontology B221.
Remove the air inlet B223 that gas supply device B23 is coupled to distribution ontology B221.Remove gas supply device B23
Gas is removed to removing distribution device in gas-fluid B22 to transmit.It removes gas and is input to removing gas point via air inlet B223
In cloth apparatus B22, and via channel B222 to outlet B224 discharges in removing distribution device in gas-fluid B22.
By removing distribution device in gas-fluid B22 so that the upper surface W11 of wafer W1 can uniformly be blowed to by removing gas, so that
The the second extra material not reacted with the first material blows off the upper surface W11 of wafer W1.
Fig. 6 is the schematic diagram according to the semiconductor equipment A1 of some embodiments of this exposure.In step S107, by a crystalline substance
Circle W1 is rotated to the lower section of plasma device B30, and is generated on a plasma to wafer W1, use strengthen the first material with
The combination of second material.In some embodiments, above-mentioned plasma can be argon ion or Nitrogen ion.
In some embodiments, plasma device B30 includes a processing chamber housing B31, plasma gas distribution dress
Put B32, a first electrode plate B33, a second electrode plate B34, a radio-frequency unit B35 and a plasma gas feeding mechanism
B36。
Processing chamber housing B31 is located at the top of wafer bearing device A2.Processing chamber housing B11 is in the sectional area pair in horizontal direction
It should be in the area of storage tank 23 and the area of wafer W1.When in other words, in technique progress, processing chamber housing B11 is not same
When positioned at the top of more than two storage tanks 23.
Plasma gas distribution apparatus B32 is set in processing chamber housing B31, and positioned at the top of the second electric-shocking plate.Deng
Plasma gas distribution apparatus B32 can be located at the top of storage tank 23, but when during technique carries out, plasma gas distribution dress
B32 is put not while positioned at the top of more than two storage tanks 23.
Plasma gas distribution apparatus B32 can be a disk-like structure, and can be circle.Plasma gas distribution apparatus
B32 includes an a distribution ontology B321 and channel B322.Being distributed ontology B321 has multiple air inlet B323 and multiple rows
Export B324.Channel B322 is connected to air inlet B323 and outlet B324.
In some embodiments, air inlet B323 is formed in the upper surface B325 of distribution ontology B321.Outlet B324 shapes
Into in the lower surface B326 of distribution ontology B321, above-mentioned lower surface B326 is towards wafer bearing device A2.In some embodiments,
Outlet B324 is evenly distributed in the lower surface B326 of distribution ontology B321.
Plasma gas feeding mechanism B36 is coupled to the air inlet B323 of distribution ontology B321.Plasma gas supplies
Device B36 is answered to transmission process gas to plasma gas distribution apparatus B32.Processing gas is inputted via air inlet B323
It is distributed to plasma gas distribution apparatus B32, and via channel B322 to outlet B324 discharges in plasma gas
Device B32.Above-mentioned processing gas can be argon gas or nitrogen.
First electrode plate B33 is set to the top of one of storage tank 23.When in other words, in technique progress, place
Manage the top that chamber B31 is not located at more than two storage tanks 23 simultaneously, and first electrode plate B33 and wafer bearing device A2
It is spaced.First electrode plate B33 can be a platy structure.First electrode plate B33 can be parallel to horizontal plane, and can be parallel to crystalline substance
Physa seat 20.In some embodiments, first electrode plate B33 is coupled to a ground voltage.First electrode plate B33 has multiple the
One through-hole B331.
Second electrode plate B34 is set to the top of first electrode plate B33.Second electrode plate B34 and first electrode plate B33 phases
Mutually interval.Second electrode plate B34 can be a platy structure, and can be parallel to first electrode plate B33.Second electrode plate B34 can have
There are multiple second through-hole B341.The processing gas that plasma gas distribution apparatus B32 is sprayed is led to via the second through-hole B341
It crosses between second electrode plate B34 to first electrode plate B33 and second electrode plate B34.
Radio-frequency unit B35 is coupled to second electrode plate B34, to make between first electrode plate B33 and second electrode plate B34
Generate an electric field.Processing gas between first electrode plate B33 and second electrode plate B34 forms plasma via above-mentioned electric field
Body.In some embodiments, argon gas or nitrogen between first electrode plate B33 and second electrode plate B34 form positively charged
Argon ion or Nitrogen ion.
In some embodiments, radio-frequency unit B35 includes an a r-f generator B351 and impedance matching element B352.
R-f generator B351 is coupled to impedance matching element B352, and impedance matching element B352 is coupled to second electrode plate B34.In
In some embodiments, radio-frequency power caused by radio-frequency unit B35 is about between the range of 13.56KHz to 60kHz.
Plasma between first electrode plate B33 and second electrode plate B34 is via the first of first electrode plate B33
Through-hole B331 is to the surface of wafer W1 and wafer susceptor 20.In this present embodiment, by plasma enhancing wafer W1
Combination between first material and the second material.
In some embodiments, wafer susceptor 20 can be as made by conductive material.In some embodiments, wafer susceptor 20
Can be as made by metal material, such as iron, ferroalloy, copper or copper alloy.In some embodiments, wafer susceptor 20 can be by non-gold
Belong to made by conductive material, such as graphite or ceramics.The resistivity of wafer susceptor 20 is about 10-9Ohm meter is to 10-7Ohm meter
Between range.
Wafer susceptor 20 includes an axle portion 21 and a carrier 22.Axle portion 21 is set in driving mechanism 10, and along one
Rotary shaft AX1 extends.Driving mechanism 10 drives axle portion 21 to rotate, and uses and carrier 22 is driven to rotate.In some embodiments, axis
The center of wafer susceptor 20 is fixed in the one end in portion 21, and the other end of axle portion 21 is fixed on driving mechanism 10.In some implementations
In example, axle portion 21 is securable to the lower surface 221 of carrier 22.
When driving mechanism 10 drives axle portion 21 to rotate, wafer susceptor 20 is rotated by axle center of rotary shaft AX1.In some realities
It applies in example, wafer susceptor 20 extends along a horizontal plane.In other words, driving mechanism 10 can drive carrier 22 along in a horizontal plane
Rotation.
Carrier 22 can be a platy structure, and can be circle.Carrier 22 includes multiple storage tanks 23, to place crystalline substance
Circle W1.Storage tank 23 is formed in the upper surface 222 of carrier 22.In some embodiments, upper surface 222 is parallel to carrier 22
Lower surface 221, and major surfaces that the upper surface 222 of carrier 22 and lower surface 221 are carrier 22.
In some embodiments, upper surface 222 about slightly larger than wafer W1 of the area of the bottom surface 231 of storage tank 23 or under
The area on surface 221.The upper surface W11 or the area of lower surface W 12 that the area of the bottom surface 231 of storage tank 23 is about wafer W1
1 times to 2 times.The upper surface W11 and lower surface W 12 of wafer W1 is the major surfaces of wafer W1.The upper surface W11 of wafer W1
The lower surface W 12 of wafer W1 can be parallel to.
The depth of storage tank 23 can be more than the thickness of wafer W1.When wafer W1 is positioned in storage tank 23, wafer W1's
Upper surface W11 is higher or lower than the upper surface 222 of carrier 22 with respect to the bottom surface 231 of storage tank 23.In some embodiments, when
When wafer W1 is positioned in storage tank 23, the upper surface W11 of wafer W1 is located at same level with the upper surface 222 of carrier 22
Face.
As shown in figure 3, storage tank 23 can radial arrangement in carrier 22.In other words, storage tank 23 can be along carrier
22 edge is alternatively arranged, and storage tank 23 is not on the central area of carrier 22.In some embodiments, 23 edge of storage tank
One circular path arranges.
In some embodiments, carrier 22 may include multiple interval projections 24, be set to the bottom surface 231 of storage tank 23
On.When wafer W1 is positioned in storage tank 23, interval projection 24 supports or is contacted with the lower surface W 12 of wafer W1, so that
A gap is formed between wafer W1 and the bottom surface 231 of storage tank 23.
As shown in Figure 1, interval projection 24 is approximately equal to the thickness of wafer W1 relative to the height of the bottom surface 231 of storage tank 23.
In some embodiments, interval projection 24 be about wafer W1 relative to the height of the bottom surface 231 of storage tank 23 0.5 times of thickness
To between 5 times of ranges.
As shown in Figures 1 and 3, interval projection 24 can be evenly distributed in the bottom surface 231 of storage tank 23.In some embodiments
In, interval projection 24 can be arranged in the bottom surface 231 of storage tank 23 in array fashion.
Wafer susceptor further includes one and electrically isolates element 30, to inhibit the electric charge stream between wafer W1 and ground voltage 10
It is dynamic.In some embodiments, electrically isolate element 30 and be set between axle portion 21 and carrier 22.Electrically isolating element 30 can be
One laminated structure.In some embodiments, the thickness for electrically isolating element 30 can be between the range of 50mm to 100mm.
In some embodiments, between the range that the dielectric constant that electrically isolates element 30 is about 3.5 to 3.7.Electrically every
Resistivity from element 30 is about 1014Ohm meter is to 1019Between the range of ohm meter.In some embodiments, member is electrically isolated
The resistivity of part 30 is more than 1014Ohm meter.Electrically isolating the material of element 30 may include the group of quartz, ceramics or above-mentioned material
It closes.
As shown in Figure 6, when implementing a plasma process, positively charged ion falls to wafer W1, carrier 22
And in the storage tank 23 of carrier 22.Since driving mechanism 10 is coupled to ground voltage VSS, a small amount of negative electrical charge can be according to
Sequence via driving mechanism 10, electrically isolate element 30, axle portion 21 to carrier 22 with neutralize on carrier 22 it is positively charged from
Son.In addition, negative electrical charge again via interval projection 24 conduct to wafer W1, with neutralize fall on wafer W1 it is positively charged from
Son.
Due to be originally exposed in wafer susceptor 20 be provided with electrically isolate element 30, can largely reduce negative electrical charge conduct to
The electric current of wafer W1 prevents the charge of kinetic energy from passing through wafer, and damage the electronic component on wafer.And it reduces on wafer W1
Voltage, wafer W1 can be reduced due to damage caused by excessively high voltage, and then the qualification rate of wafer W1 can be promoted.
Fig. 7 is the schematic diagram according to the wafer bearing device A2 of some embodiments of this exposure.As shown in fig. 7, electrically every
It is set in axle portion 21 from element 30.Element 30 is electrically isolated along perpendicular to the direction of rotary shaft AX1 to extend.In some embodiments
In, electrically isolate the central section that element 30 is located at axle portion 21.It electrically isolates element 30 and driving mechanism 10 is spaced, and with
Carrier 22 is spaced.
Fig. 8 is the schematic diagram according to the wafer bearing device A2 of some embodiments of this exposure.As shown in figure 8, electrically every
It is set in carrier 22 from element 30.Element 30 is electrically isolated along the extending direction of carrier 22 to extend.In some embodiments
In, it electrically isolates element 30 and is located between the upper surface 222 of carrier 22 and lower surface 221.In some embodiments, electrically
Isolation element 30 is located between the storage tank 23 of tray disk and lower surface 221.In other words, element 30 and axle portion are electrically isolated
21 is spaced, and spaced with storage tank 23.
In another embodiment, the groove that element 30 is set to the lower surface 221 for being formed in carrier 22 is electrically isolated
It is interior, and contact axle portion 21.
Fig. 9 is the schematic diagram according to the wafer bearing device A2 of some embodiments of this exposure.As shown in figure 9, electrically every
It is set in storage tank 23 from element 30.In some embodiments, electrically isolate element 30 be coated on the side wall of storage tank 23 with
And bottom surface 231.In some embodiments, electrically isolate element 30 and include multiple interval projections 31, to support and contact wafer
The lower surface W 12 of W1.In some embodiments, interval projection 31 can be evenly distributed on the bottom surface 231 of storage tank 23.
In some embodiments, electrically isolate element 30 and may not include interval projection 31.The lower surface W 12 of wafer W1 is direct
It fits in and electrically isolates element 30.
Figure 10 is the schematic diagram according to the wafer bearing device A2 of some embodiments of this exposure.Element 30 is electrically isolated to apply
It is distributed in the interval projection 24 in storage tank 23.In other words, electrically isolate element 30 be located at wafer W1 with interval projection 24 it
Between.Element 30 is electrically isolated to be spaced wafer W1 and interval projection 24.
In conclusion the wafer bearing device for being used in semiconductor equipment of this exposure utilizes and electrically isolates element to inhibit
Charge flowing between wafer and ground voltage.Therefore, it when implementing a plasma process in wafer, can reduce via crystalline substance
Physa seat is conducted to the electric current of wafer, can reduce wafer due to damage caused by excessively high voltage, and then can promote wafer
Qualification rate.
This exposure is to provide a kind of wafer bearing device for being used in semiconductor equipment, brilliant in a plasma process
Circle bogey can drop for voltage caused by wafer, and then promote the qualification rate of wafer.
This exposure provides a kind of wafer bearing device, is electrically isolated including a driving mechanism, a wafer susceptor and one
Element.Driving mechanism is coupled to a ground voltage.Wafer susceptor is set in driving mechanism, and including a storage tank, to put
Put a wafer.It electrically isolates element to be set on wafer susceptor, the charge between wafer and ground voltage to be inhibited to flow.
In some embodiments, electrically isolate element and be set in storage tank.It is prominent including multiple intervals to electrically isolate element
Block, to contact the lower surface of wafer.
In some embodiments, wafer susceptor include multiple interval projections, be set on the bottom surface of storage tank, and electrically every
Interval projection is set to from element.
In some embodiments, wafer susceptor further includes an axle portion and a carrier.Axle portion is set in driving mechanism.
Carrier is set in axle portion, and including storage tank.
In some embodiments, electrically isolate element and be set between axle portion and carrier.In some embodiments, electrically
Isolation element is set in axle portion and/or in carrier.
This exposure provides a kind of semiconductor equipment, including a driving mechanism, a wafer susceptor, one electrically isolate element with
An and plasma device.Driving mechanism is coupled to a ground voltage.Wafer susceptor is set in driving mechanism.Wafer susceptor packet
Multiple storage tanks are included, to place multiple wafers.It electrically isolates element to be set on wafer susceptor, to inhibit wafer and ground connection
Charge flowing between voltage.
In some embodiments, plasma device includes a first electrode plate, a second electrode plate and radio frequency dress
It puts.First electrode plate is set to the top of one of storage tank.Second electrode plate is set to the top of first electrode plate.Radio frequency
Device is coupled to second electrode plate, to make to generate an electric field between first electrode plate and second electrode plate.
In some embodiments, plasma device further includes a plasma gas distribution apparatus and a plasma
Gas supply device.Plasma gas distribution apparatus is set on second electrode plate.Gas supply device provides a processing gas
Body is to plasma gas distribution apparatus.Processing gas flow to first electrode plate and via plasma gas distribution apparatus
Between two electrode plates, and plasma is formed between first electrode plate and second electrode plate.
The embodiment that the above-mentioned feature disclosed can have been disclosed with one or more in any appropriate manner is combined with each other, repaiies
Decorations, displacement or conversion, are not limited to specific embodiment.
Though the present invention is disclosed above with various embodiments, however it is only exemplary reference rather than the model to limit the present invention
It encloses, it is any to be familiar with this those skilled in the art, without departing from the spirit and scope of the present invention, when can do a little change and retouching.Cause
Above-described embodiment is not limited to the scope of the present invention for this, and protection scope of the present invention is when regarding appended claims institute circle
Subject to fixed range.
Claims (10)
1. a kind of wafer bearing device, including：
One driving mechanism is coupled to a ground voltage；
One wafer susceptor is set in the driving mechanism, and including a storage tank, to place a wafer；And
One electrically isolates element, is set on the wafer susceptor, to inhibit the electric charge stream between the wafer and the ground voltage
It is dynamic.
2. wafer bearing device as described in claim 1, wherein this electrically isolates element and is set in the storage tank.
3. wafer bearing device as claimed in claim 2, wherein this electrically isolates element and includes multiple interval projections, to connect
Touch the lower surface of the wafer.
4. wafer bearing device as described in claim 1, the wherein wafer susceptor include multiple interval projections, it is set to this
On the bottom surface of storage tank, and this electrically isolates element and is set to the multiple interval projection.
5. wafer bearing device as described in claim 1, the wherein wafer susceptor further include：
One axle portion is set in the driving mechanism；And
One carrier is set to the axle portion, and including the storage tank.
6. wafer bearing device as claimed in claim 5, wherein this electrically isolates element and is set to the axle portion and the carrier
Between.
7. wafer bearing device as claimed in claim 5, wherein this electrically isolates that element is set in the axle portion and/or this holds
In load plate.
8. a kind of semiconductor equipment, including：
One driving mechanism is coupled to a ground voltage；
One wafer susceptor is set in the driving mechanism, and wherein the wafer susceptor includes multiple storage tanks, to place multiple crystalline substances
Circle；
One electrically isolates element, is set on the wafer susceptor, to inhibit the electric charge stream between the wafer and the ground voltage
It is dynamic；And
One plasma device is set to above the wafer bearing device.
9. semiconductor equipment as claimed in claim 8, the wherein plasma device include：
One first electrode plate is set to the top of one of the multiple storage tank；
One second electrode plate is set to the top of the first electrode plate；And
One radio-frequency unit is coupled to the second electrode plate, to make to generate one between the first electrode plate and second electrode plate
Electric field.
10. semiconductor equipment as claimed in claim 9, the wherein plasma device further include：
One plasma gas distribution apparatus is set on the second electrode plate；And
One plasma gas feeding mechanism provides a processing gas to the plasma gas distribution apparatus,
Wherein the processing gas flow to the first electrode plate and the second electrode plate via the plasma gas distribution apparatus
Between, and form plasma between the first electrode plate and the second electrode plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611169532.3A CN108206153B (en) | 2016-12-16 | 2016-12-16 | Wafer bearing device and semiconductor equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611169532.3A CN108206153B (en) | 2016-12-16 | 2016-12-16 | Wafer bearing device and semiconductor equipment |
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| CN108206153A true CN108206153A (en) | 2018-06-26 |
| CN108206153B CN108206153B (en) | 2021-02-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611169532.3A Active CN108206153B (en) | 2016-12-16 | 2016-12-16 | Wafer bearing device and semiconductor equipment |
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| CN111354673A (en) * | 2018-12-21 | 2020-06-30 | 夏泰鑫半导体(青岛)有限公司 | Wafer rotating device and wafer rotating system |
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| CN108206153B (en) | 2021-02-09 |
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