TWI393487B - Plasma reaction chamber with a plurality of processing plates having a plurality of plasma reaction zone - Google Patents

Description

Plasma reaction chamber comprising a plurality of plasma reaction zones including a plurality of processing platforms

This invention relates to plasma reaction chambers or, more specifically, to plasma reaction chambers for the manufacture of microchips, LCD panels, solar cells, and the like.

At present, there are various plasma reaction chambers in the industry for manufacturing various semiconductor wafers, LCD panel substrates, solar cells and the like. These reaction chambers can be classified into three categories depending on the position at which the plasma is produced. The plasma generating zone of the first type of plasma reaction chamber is co-located with the plasma participating in the reaction zone (ie, the wafer placement zone in which the plasma is processed on the surface of the wafer), and thus is referred to as the "co-located plasma reaction chamber (in " situ plasma chamber"", in this reaction chamber, the plasma is directly generated on the substrate to be treated and directly in contact with the substrate. Due to this characteristic, the reaction chamber is sometimes referred to as "direct plasma reaction". Direct plasma chamber". An example of such a reaction chamber can be found in the background art of U.S. Patent No. 4,123,316. Such reaction chambers are typically used where the substrate is treated directly with plasma. The plasma of the second type of plasma reaction chamber is generated outside the reaction chamber, and the plasma species of the plasma is introduced into the reaction chamber of the substrate to be processed through a conduit. In this case, electricity The slurry formation zone is remote from the plasma to participate in the reaction zone and is therefore referred to as the "remote plasma chamber." Examples of such reaction chambers are: German Patent Application No. DE 14 14 132 559, issued to 1993, and U.S. Patent No. 4,138,306. Such a reaction chamber is typically used for cleaning the reaction chamber with plasma, but it can also be used to treat substrates. The third type of plasma reaction chamber is also produced inside the reaction chamber. The plasma, but with a separator in the plasma generation zone and the plasma participating reaction zone, separates them adjacently. In this manner, the resulting plasma cannot be in direct contact with the substrate being processed, but particles from the plasma can flow through the channels on the separator to the substrate being processed to participate in the reaction. In the arrangement, the plasma generating zone and the plasma participating in the reaction zone are discretely disposed, but adjacent to each other, thus referred to as "quasi-remote plasma chamber". Examples of such reaction chambers are U.S. Patent Nos. 4,123,316 and 6,192,828. The adjacent plasma reaction chamber can also be used without a partitioning device, but simply places the plasma generating source away from the area where the substrate is located. As described in U.S. Patent No. 4,232,057.

Remote plasma-assisted chemical vapor deposition is an application of remote plasma chamber technology. It is commonly used to deposit films at lower temperatures and produce high quality films, such as stoichiometric films, and can be produced by controlling the gas phase reaction path and by selecting a suitable plasma excitation source. Gas particles ensure a high consistency of the film. Since the substrate is away from the plasma glow region, damage to the substrate by the plasma can be avoided. However, due to lower ion bombardment and attenuation of free radicals, the dissociation reaction of the gas is reduced, resulting in a lower deposition rate. Adjacent plasma chemical vapor deposition can increase the deposition rate while increasing the radical density, such as shortening the path length from the plasma to the wafer to avoid free radical decay.

On the other hand, in some cases, direct electricity is also required during the film formation process. Slurry, for example, when special film properties (such as high compressive stress requirements) are required. Due to the powerful ion bombardment effect of direct plasma, such film properties can be achieved by co-located plasma. In addition, in order to effectively plasma-treat the substrate or deposited film surface to improve its interface adhesion and film stability, thereby improving the reliability of most copper interconnect technology devices, direct plasma is required because of its Has a high radical density and ion density. In addition, the co-located plasma has a higher efficiency than the far-end plasma when cleaning in a chemical vapor deposition reaction chamber for high carbonaceous materials.

From the above analysis we see that conflicting technical processing requirements lead to seemingly incompatible reaction chamber designs. Some technical treatments require the generation of plasma at the distal end away from the substrate, while others require the plasma to be contacted with the substrate. So we need a reaction chamber that has both the ability to generate adjacent plasma and the ability to produce direct plasma. This design can be used not only for forming a film having satisfactory characteristics, but also for plasma treatment, thereby improving the reliability of the semiconductor device and achieving efficient reaction chamber cleaning.

The reaction chamber in the specific embodiment of the present invention can use both adjacent plasma and in-situ plasma for substrate processing and reaction chamber cleaning. In various embodiments, the throughput can also be increased by a mini-batch approach, i.e., each of the reaction chambers includes a plurality of processing regions so that a plurality of substrates can be processed simultaneously. However, it should be noted that certain features of the invention are not limited to implementation in a small batch reaction chamber. A still further embodiment of the present invention provides an "all-in-one" chemical vapor deposition Reaction chamber ("all-in-one" CVD reactor), which can use either isotope plasma or direct plasma chemical vapor deposition, thermal chemical vapor deposition, adjacent plasma chemical vapor deposition or plasma enhanced chemistry Film formation by vapor deposition can also be used for plasma treatment of the substrate as well as cleaning of the film and plasma reaction chambers, or various combinations of the modes of operation described above. Due to these extended functions, the reaction chamber is referred to herein as an "all-in-one chemical vapor deposition reaction chamber." The all-in-one reaction chamber can be implemented as a single substrate reaction chamber, or can be implemented in a multi-processing platform format for mini-batch processing.

The present invention is achieved by the following technical methods:

The present invention provides a plasma reaction chamber comprising: a reaction chamber body in which a plurality of processing platforms are disposed; a plurality of rotatable substrate holders, each of which is disposed correspondingly to each of said substrate holders In the processing platform; a plurality of plasma generating regions co-located with the plasma in the reaction zone, each of the plasma generating regions co-located with the plasma participating in the reaction zone is located above each of the substrate supports; a plurality of phases An adjacent plasma generating region, each of the adjacent plasma generating regions is located above each corresponding plasma generating region co-located with the plasma in the reaction region, and is electrically co-located with the plasma in the reaction region The slurry generating regions are in communication; and an RF energy source is coupled to each of the adjacent plasma generating regions.

The present invention also provides a plasma reaction chamber comprising: a reaction chamber body; a rotatable substrate holder disposed in the reaction chamber body; a first gas transfer distribution device; a second gas transfer distribution device, and The first gas transfer distribution devices are spaced apart from each other and with the first gas transfer point The cloth device and the reaction chamber body are electrically insulated from each other, wherein an adjacent plasma generation region is formed between the first gas transfer distribution device and the second gas transfer distribution device, and the second gas transfer distribution device and the substrate support Forming a plasma generating zone co-located with the plasma in the reaction zone, the first gas transfer distributing device transporting a first process gas to the adjacent plasma generating zone, and the second gas distributing device a second process gas is delivered to the plasma generation zone co-located with the plasma in the reaction zone, and the second gas transfer distribution device also transports the plasma particles from the adjacent plasma generation zone to participate in the reaction zone with the plasma. a co-located plasma generating region; an RF source coupled to the first gas transfer distribution device; and a switching device for selectively connecting the second gas transfer device to the RF source or ground.

The invention further provides a plasma reaction chamber comprising: a reaction chamber body having a plurality of processing platforms disposed therein; a plurality of rotatable substrate holders, each of the substrate holders being disposed correspondingly to each of the chambers In the processing platform; a plurality of first gas transfer distribution devices, each of the first gas transfer distribution devices is correspondingly disposed in a corresponding processing platform; a plurality of second gas transfer distribution devices, each of the second gas transfer distribution devices corresponding Provided in a corresponding processing region and spaced apart from a corresponding first gas transfer distribution device, and electrically insulated from the corresponding first gas transfer distribution device and the reaction chamber body, wherein: in each respective processing region Between the first gas transfer distribution device and the second gas transfer distribution device, an adjacent plasma generating region is formed, and a second plasma transfer device and the substrate support form a parity with the plasma participating in the reaction zone. a plasma generating zone, the first gas transfer distribution device transports the first process gas to the adjacent plasma Forming a zone, and the second gas transfer distribution device transports the second process gas to the plasma generation zone co-located with the plasma in the reaction zone, and the second gas transfer distribution device also transports the plasma particles from the adjacent plasma generation zone a plasma generation zone co-located with the plasma in the reaction zone; an RF source coupled to the plurality of first gas delivery distribution devices; and a switching device for selectively connecting the second gas delivery distribution device to RF source or ground.

The present invention still further provides a plasma reaction chamber comprising: a reaction chamber body; a rotatable substrate holder disposed in the reaction chamber body; a first gas transfer distribution device; and a second gas transfer distribution device Separating from the first gas transfer distribution device and electrically insulated from the first gas transfer distribution device and the reaction chamber body, wherein between the first gas transfer distribution device and the second gas transfer device Forming an adjacent plasma generating region, forming a plasma generating region in the same position as the plasma participating in the reaction zone between the second gas transfer distributing device and the substrate support, the first gas transfer distributing device will be first Processing gas is delivered to the adjacent plasma generation zone, and the second gas delivery distribution device delivers a second process gas to the plasma generation zone co-located with the plasma in the reaction zone, the second gas delivery distribution device Plasma particles from adjacent plasma generating regions are also transported to a plasma generating region co-located with the plasma in the reaction zone; a first RF source, and the first gas transfer distribution Set is connected; and a second RF source, with the second gas delivery means connected to distribution.

Various embodiments of the present invention are directed to plasma processing chambers for processing various substrates, such as semiconductor wafers, solar cell wafers, LCD substrates. this The various embodiments described can be used in conjunction with conventional automated processing platforms. The various embodiments described herein can be used, for example, in thermal chemical vapor deposition, plasma enhanced CVD, in-situ plasma treatment. )Wait. In the illustrated embodiment, each reaction chamber has four processing platforms that can perform the same technical processing simultaneously; however, it should be noted that the reaction chamber can also have two, three or other number of processing platforms. Since the number of processing platforms is relatively small, it is referred to herein as a "mini-batch" system.

Figure 1 shows a system 100 having two reaction chambers 108 and 110, in accordance with one embodiment of the present invention. In this embodiment, system 100 is used to complete chemical vapor deposition of a semiconductor substrate. Although only two reaction chambers are shown in this example, this embodiment may employ three reaction chambers or other arrangements such that the system may include more than three reaction chambers. Illustratively, each of the reaction chambers 108 and 110 in the Figure has four processing platforms 108a-108d and 110a-110d, respectively. The central transfer chamber 115 is provided with at least one robot arm 120 that can move the wafer into or out of each processing platform. Each reaction chamber is provided with an indexing arm 150 that can be rotated in the direction indicated by the arrow, which can be rotated or stopped between different processing platforms directly above each processing platform, so that the pending The substrate is loaded on or unloaded from the processing platform onto the positioning arm 150. The robot arm 120 can cooperate with the positioning arm 150 to load or remove the substrate from the reaction chamber. The robot arm 120 is received by conventional vacuum locks 125 and 130 And transporting the substrates, vacuum locks 125 and 130 are coupled to a conventional small environment 135. In the small environment 135, the substrates are loaded into or unloaded from standard wafer box or front opening unified pods (FOUP) 140a-140c.

It will be readily understood that each of the reaction chambers 108, 110 and transfer chamber 115 has a top cover, but none of which is shown in the figures for the purpose of showing the internal details of these components. The transfer chamber 115 can employ a conventional top cover and will therefore not be discussed and illustrated herein. However, the top covers of the reaction chambers 108 and 110 are uniquely designed and will be described below in conjunction with the drawings.

Referring to Figure 2, there is shown a reaction chamber 20 when a lid 10 is in an open position, in accordance with one embodiment of the present invention. Reaction chamber 20 includes a reaction chamber base 40 that is at least partially defined by body 41. The body 41 has an upper surface 42 and an opposite lower surface 43. A plurality of processing platforms 44 are disposed on the upper surface 42 and may process separate individual substrates within each processing platform, as will be described below. In addition, it will be readily understood that the body 41 has a peripheral boundary 45 which can have various shapes and a variety of bevel angles. In the configuration shown in Fig. 2, three reaction chambers 20 may be disposed around a transfer chamber 23 having a pentagonal shape. However, it should be noted that in other forms of the invention, the transfer chamber 23 may have other shapes, such as hexagons, such that four semiconductor reaction chambers 20 may be disposed around the transfer chamber 23.

The reaction chamber base 40 is provided with a plurality of shaft holes 50 for receiving the shaft 312 of the substrate support 315 (Fig. 3A), the shaft 312 being located substantially at the center of each of the processing platforms 44. A plurality of shaft holes 50 are provided around each of the shaft holes 50 for accommodating the top The thimble shaft bore 52 of the needle cooperates with the base or substrate support 315 to effect placement and unloading of the substrate. An arcuate exhaust passage 55 is disposed above the base 40 for discharging the reaction gas in the inner chamber 21 of the reaction chamber 20 after the substrate is processed, and the exhaust passage 55 is connected to the conduit 63. The vacuum pumps 62 are connected. It should be noted that although FIG. 2 illustrates a particular exhaust gas realization structure, other exhaust solutions may be employed in the present invention. For example, in the processing platform of Figure 3A, exhaust is accomplished through the bottom of the processing platform and under each substrate support. Thus, for the present invention, any exhaust structure designed for substrate processing can be employed. However, one feature described herein and described in other embodiments of the patent is the use of a single vacuum pump to perform the venting operation of all of the processing stations in a reaction chamber. This produces uniform technical processing pressure in each processing platform so that the same technical operations can be performed simultaneously in all processing platforms - the small batch processing referred to herein.

The reaction chamber top cover 10 includes a body 101 having a top or outer surface 102 and opposing bottom or interior surfaces 103. As shown in the figure, the bottom or inner surface of the reaction chamber top cover 10 is provided with a cavity 104 in which a plurality of gas transfer distribution members 105 are mounted. The gas delivery distribution element 105 and the component structure loaded thereon will be described later when a single processing platform 44 is described in detail. When the reaction chamber top cover 10 is placed in the closed position, it can provide a sufficient seal to the interior of the reaction chamber to form a separate processing platform (described in detail later). It will be appreciated that the individual gas delivery distribution elements 105 are coaxially aligned with respect to a single processing platform 44. It should also be noted that each gas transfer distribution element 105 is provided with a set A small pore 107 is provided to allow a source of reactive gas to be delivered to a single processing platform 44.

FIG. 3A shows a processing platform 300 constructed in accordance with an embodiment of the present invention. The processing platform can be used in a single-substrate processing chamber or as a one station in a batch system as shown in Figures 1 and 2. In FIG. 3A, the processing platform 300 is comprised of a chamber wall (or, reaction chamber body) 320, a chamber floor 325, and has an opening 330 coupled to a vacuum pump and a top assembly 335. The top member 355, corresponding to the showerhead assembly 105 shown in FIG. 2, includes a conductive container 345, a conductive gas block 355, and a conductive spray. A conductive showerhead plate 340, all of which are insulated from each other and from the chamber wall 320. Conductive container 345 is typically used as a first gas transfer distribution device or a first gas transfer distribution device for delivering process gas into the space represented by first gas box 375, which is an adjacent plasma generating portion. The transfer distribution plate 355 and the shower plate 340 cooperate to function as a second gas transfer distribution device or a second gas transfer distribution device having two functions: transporting the process gas to the film formation space 305 and plasma particles. And radicals are transferred from the first gas tank 375 to the film forming space 305. Thus, the gas transfer distribution element 105 comprises two gas transfer distribution devices, wherein the first gas transfer distribution device is responsible for introducing the first process gas into the adjacent plasma generation region, and the second gas transfer device is responsible for the second process gas and Plasma particles are transported from adjacent plasma generation zones A plasma generating zone that is in the same position as the plasma participating in the reaction zone is fed. Hereinafter, the first gas transfer distribution device will be referred to as a conductive container 345 as needed, and the second gas transfer distribution device will be referred to as a transfer distribution plate 355 and a shower plate 340 according to its constitution in various embodiments. Wait. It should be noted that the conductive gas transfer distribution plate 355 and the conductive shower plate 340 in the present invention may also be manufactured as a single piece. The adjacent plasma generation zone is also referred to as a first gas box 375, and the co-located plasma generation zone is also referred to as a film formation space 305.

The film forming space 305 is composed of a chamber wall 320, a bottom plate 325, and a shower plate 340, and a substrate 310 is placed therein. The substrate 310 is placed over the substrate support 315. During processing of the substrate, the substrate support 315 can be stationary or can be used to facilitate various movements of uniform film formation. The substrate holder 315 is rotatable in this embodiment as indicated by arrow A. It should be noted that in various embodiments of the invention, the rotatable substrate support 315 can provide at least two significant benefits. First, during the technical process, the uniformity of the deposited film can be enhanced by the rotation of the substrate support 315. The uniformity of the film is quite important in modern semiconductor manufacturing technology; secondly, the substrate support 315 The rotation assists in achieving uniform pumping of a plurality of processing platforms within the reaction chamber. This effect is particularly pronounced in applications where the reaction chamber contains multiple processing platforms and only one vacuum pump is used to draw venting of all processing platforms.

A grounded electrode 316 is disposed in the substrate support 315. In the present embodiment, two RF generators (high frequency RF generator 324 and low frequency RF generator 326) are connected to a RF matching circuit 312, RF matching circuit 312. RF energy is coupled to the conductive container 345. The high frequency RF generator 324 can operate at frequencies of 27 MHZ, 40 MHZ, 60 MHZ, etc., while the low frequency RF generator 326 can operate in the KHZ range or in the lower MHZ range, such as 2 MHZ, 13.56 MHZ, and the like. The first process gas 302 or the mixed gas from the gas supply source is delivered to the first gas tank 375, and the second process gas 304 or the mixed gas from the gas supply source is delivered to the second gas tank 380. As can be seen from Figure 3A, in this embodiment, the first and second process gases are not mixed until the film space 305 is reached until they are mixed together to reach the film space 305.

The reaction chamber shown in Figure 3A can operate in two different modes: adjacent plasma mode and isotope plasma mode. In the present embodiment, switching between the two modes is achieved by mechanical means. The first movable contact element 370 has two selectable positions, and when it is in an up/disengaged position, the conductive container 345 is transferred to the conductive gas transfer plate 355 by the first insulating ring 350. Electrically insulating; conversely, when it is in the down/engaged position, the conductive container 345 is electrically connected to the conductive gas transfer distribution plate 355. The second movable contact element 365 has two selectable positions: the electrically conductive gas transfer distribution plate 355 is electrically insulated from the grounded chamber wall 320 by the second insulating ring 360 when it is in the upper/off position; The conductive gas transfer distribution plate 355 is electrically connected to the grounding chamber wall 320 when it is in the lower/connected position.

With further reference to FIG. 3A, when the first movable contact element 370 and the second movable contact element 365 are simultaneously in the upper/open position, the conductive container 345 has an electrical potential applied by a radio frequency matching circuit, while the electrically conductive backplane is electrically floatable. When the first movable contact element 370 is in the upper/open position and the second movable contact element 365 is in the lower/connected position, the conductive container 345 has an electrical potential applied by the radio frequency matching circuit, and the conductive bottom plate is grounded. When the first movable contact element 370 is in the lower/connected position and the second movable contact element 365 is in the upper/off position, the conductive container 345 and the transfer distribution plate 355 together have an electrical potential applied by the radio frequency matching circuit.

Figure 3B shows the situation in which the reaction chamber of Figure 3A operates in an adjacent plasma generation mode. In Figure 3B, the movable contact element 370 is in the upper/open position and the movable contact element 365 is in the lower/connected position. The first process gas 302 or mixed gas is input to the conductive container 345 and then enters the first gas tank 375 through the vent holes 372 in the bottom plate of the conductive container 345. The high frequency radio frequency or a mixed frequency of the high frequency and low frequency RF frequencies is applied to the conductive container 345, and the conductive container 345 operates as an electrode to cause plasma discharge in the first gas box 375. Finally, radicals, ions, and particles are formed in the first gas box 375. Neutral radicals and gas species are transported into the film forming space 305 through the vent holes 374 of the transfer plate 355 and the matching holes on the shower plate 340. The second process gas 304 is delivered into the inner space of the bottom plate, that is, the second air box 380, and is input to the film formation space 305 through a vent hole located on the shower plate 340. The radicals and particles generated by the first process gas plasma in the first gas tank 375 are mixed in the film forming space 305, and then formed on the substrate 310 by chemical reaction and polymerization, or by chemistry. Reaction reaction chamber Cleaning. It is worth noting that it may not be necessary to use a second process gas during the chamber cleaning operation.

Figure 3C shows the situation in which the reaction chamber of Figure 3A operates in an in-situ or direct plasma generation mode. In Figure 3C, the movable contact element 370 is in the lower/connected position and the movable contact element 365 is in the upper/open position. In this case, the conductive container 345 and the transfer distribution plate 355 are at the same potential. A high frequency radio frequency or a high frequency and low frequency mixing frequency is used for the conductive container 345 and is connected thereto by the conductive gas transfer distribution plate 355. The conductive gas transfer distribution plate 355 together with the shower plate 340 serves as an electrode for generating a plasma discharge in the film formation space 305. The first process gas 302 is input to the conductive container 345 and then transferred to the first gas tank 375 through the venting holes 372 in the bottom plate of the conductive container 345, and from there through the holes 374 into the film forming space 305. The second process gas 304 is delivered into the interior space of the transfer distribution plate, i.e., the gas box 2, and enters the film formation space 305 through the venting holes in the shower plate 340. Since the plasma is excited in the film forming space 305, radicals, ions, and particles simultaneously appear in the film forming space 305. The free radicals and particles formed by the plasma generated by the first and/or second process gases in the film formation space 305 form a thin film on the substrate 310 by chemical reaction and polymerization.

The device of Figure 3A can also be used for thermal CVD film formation. For this operation, the electrically conductive container 345 and the transfer distribution plate 355 are electrically isolated by placing the first movable contact element 370 in the upper/off position. The transfer distribution plate 355 is disconnected from the reaction chamber body 320 by placing the second movable contact member 365 in the upper/disconnected position. The substrate 310 is placed on the substrate holder 315 and built in The heater 318 in the substrate holder 315 heats the substrate 310. The first process gas 302 is delivered into the conductive container 345 and then transferred into the first gas tank 375 through a venting opening 372 located in the bottom plate of the conductive container 545, and then passed through the venting holes 374 and the shower plate on the distribution plate 355. 340 is ultimately delivered into film forming space 305. The second process gas 304 is delivered into the internal space of the transfer distribution plate 355, that is, the gas box 2, and is transported into the film forming space through the vent holes on the shower plate 340. The first process gas and the second process gas are then mixed in the film formation space 305, and a film is formed on the substrate 310 by a chemical reaction using thermal energy as a reaction energy.

From the foregoing description and related drawings, it will be understood that the vacuum reaction chamber of Figures 3A-3C includes three compartments. The first compartment is composed of a conductive container 345, a first insulating ring 350, and a conductive gas transfer distribution plate 355. The compartment is for inputting and diffusing the first process gas 302 therein, referred to as a first air box 375. The second compartment is composed of the above-described conductive gas distribution plate 355 and the conductive shower plate 340 for introducing and diffusing the second process gas therein, which is referred to as a gas box 2. The third partition is composed of the above-described conductive shower plate 340, second insulating ring 360, and conductive reaction chamber main body 320, and is referred to as a film forming space 305. The third compartment includes a substrate support 315 for loading the substrate 310.

The conductive container 345 is connected to a high frequency and a low frequency RF power source 324 and 326, and the bottom plate of the conductive container 345 is provided with a venting hole 372 for diffusing the first process gas from the conductive container 345 to the first Air box 375. In this case, it should be understood that whenever a process gas is referred to, it may refer to a single gas component or a mixture of gases. Things. A first insulating ring 350 is disposed between the conductive container 345 and the conductive gas transfer distribution plate 355, so that when the first movable contact member is in the upper/open position, the conductive container 345 and the conductive gas transfer distribution plate Between 355 is electrically insulated by the first insulating ring 350.

The conductive gas transfer distribution plate 355 has a venting hole 374 to diffusely distribute the first process gas from the first gas tank 375 to the film forming space 305. The transfer distribution plate 355 also has an internal space separate from the first air box 375. The internal space communicates with the film forming space through a hole 376 in the shower plate 340, through which the second process gas can be introduced and transported to Film formation space 305. The conductive shower plate 340 and the conductive gas transfer distribution plate 355 are electrically connected to each other and together constitute the gas box 2. The shower plate 340 has two sets of venting holes 374, 376 for communicating the first air box 375 and the film forming space 305, and the second air box 380 and the film forming space 305, respectively.

A second insulating ring 360 is disposed between the conductive gas transfer distribution plate 355 and the conductive reaction chamber body 320, so that when the second movable contact member 365 is in the upper/off position, the conductive gas transfer distribution plate 355 and The conductive reaction chamber bodies 320 are electrically insulated from each other. The conductive reaction chamber body 320 and the electrodes 316 disposed in the substrate holder 315 are both grounded.

Figure 4A shows another embodiment of a reaction chamber 400 that can be used in the system shown in Figure 1. All components similar to those in the embodiment of Fig. 3A are numbered similarly to Fig. 3A, except that the 4xx series numbering is employed in Fig. 4A, and thus these components will not be repeatedly described. In the present embodiment, mechanically movable contact elements are not employed to cause the conductive container 445 and/or the transfer distribution plate 455 to have different potentials. As an alternative, Switching is accomplished electronically via switch 485, which may be located remotely from processing platform 400. Alternatively, switch 485 can also be integrated into radio frequency matching circuit 412. Specifically, the switch 485 may be a mechanical switching device, an electronic electronic switching device, or a switching function by a combination of hardware or software or a combination of hardware and software. In the embodiment of FIG. 4A, the electrically conductive container 445 is directly connected to the radio frequency matching circuit 412, and the electrical connection to the transfer distribution plate 455 is controlled by the switch 485. Therefore, in the present embodiment, the conductive container 445 is always biased by the RF matching circuit, and the transfer distribution plate 455 can be selected from one of three positions: biased by the RF matching circuit (biased by the RF Match), floating, or grounded. In Figure 4A, the transfer distribution plate 455 is floating.

In FIG. 4B, the switch 485 is coupled to the transfer distribution plate 455 and grounds the transfer distribution plate 455. The high frequency power or the high frequency power and the low frequency power are mixed and applied to the conductive container 445 to generate a plasma discharge in the first gas tank 475, thereby generating radicals, ions, and plasma in the first gas tank 475. particle. Neutral free radicals and gas particles are transported into the film forming space through the entrance aperture 474 on the transfer plate 455 and the aperture 478 in the shower plate 440. The second process gas may be delivered to the interior space of the transfer distribution plate, i.e., the second gas box 480, and then diffused and transported into the film forming space 405 through the entrance holes 476 in the shower plate 440. The radicals and particles generated by the first process gas in the first gas tank 475 are mixed with the second process gas in the film formation space 405, and a film is formed on the substrate by chemical reaction, polymerization, or a reaction chamber is performed by a chemical reaction. Cleaning operation.

In FIG. 4C, switch 485 connects conductive gas transfer distribution plate 455 and conductive container 445 together. The high frequency power or the high frequency power and the low frequency power are mixed and applied to the conductive container 445 and the transfer distribution plate 455. In this configuration, the conductive shower plate 440 operates as an electrode due to the equipotential between the conductive container 445, the transfer distribution plate 455, and the shower plate 440. The plasma discharge is in progress in the film forming space 405 between the shower plate 440 and the substrate holder 415. The first and second process gases are mixed in the film forming space 405, and then a film is formed on the surface of the substrate by chemical reaction and plasma polymerization, or plasma treatment is performed by particles generated by ions, radicals, and chemical reactions. Cleaning operation.

Figures 5A and 5B show another processing platform constructed in accordance with one embodiment of the present invention. All components similar to those of the embodiment of Fig. 3A are given the same reference numerals, but with the 5xx series numbering. These components will not be described repeatedly.

The chemical vapor deposition vacuum reaction chamber of Figures 5A and 5B is composed of three compartments. The first compartment is composed of a conductive container 545, an insulating material ring 550, and a conductive gas transfer distribution plate 555 for introducing the first process gas and distributing and diffusing it to a desired position. The first compartment is called First air box 575. The second compartment is composed of the above-mentioned conductive gas transmission distribution plate 555 and the insulating plate 542 for introducing the second process gas and distributing and diffusing the same to the required position, and the second compartment is called the second air box 585. . The third compartment is composed of a conductive shower plate 540 and a conductive reaction chamber body 520, and is used to form a film, which is referred to as a film formation space 505.

Switch 580 connects conductive container 545 to RF matching circuit 512 or float Ground potential. Switch 580 can also connect conductive shower plate 540 to RF matching circuit 512 or to ground. FIG. 5A illustrates the use of switch 580 to connect conductive container 545 to matching circuit 512 to ground conductive shower plate 540. This situation is applied to adjacent plasma operations. FIG. 5B illustrates the case where the conductive container 545 is placed at a floating potential by the switch 580 and the conductive shower plate 540 is connected to the radio frequency matching circuit 512. This situation is applied to the formation of co-located plasma.

In the embodiment of Figures 5A and 5B, the insulating ring 550 is positioned between the conductive container 545 and the conductive gas transfer distribution plate 555 such that the conductive container 545 and the conductive gas transfer distribution plate 555 are electrically insulated from each other. Further, an insulating plate 542 is provided between the transfer distribution plate 555 and the conductive shower plate 540, so that the shower plate 540 is electrically insulated from the transfer distribution plate 555 and the reaction chamber main body 520.

Figure 5A shows the state of the processing platform when switch 580 is in the adjacent plasma mode of operation. In this position, the conductive container 545 is connected to the RF matching circuit 512 and the shower plate 540 is grounded. The first process gas is input to the conductive container 545 and then enters the first air box 575 through a venting opening 572 located in the bottom plate of the conductive container 545. The RF power source from the RF matching circuit 512 is coupled to the conductive container 545 and the conductive container 545 is used as an electrode for plasma discharge in the first gas box 575 (ie, the distal plasma). Therefore, radicals, ions, and plasma particles are generated in the first gas tank 575. Neutral free radicals and gas particles enter the film forming space through the venting holes 574 on the transfer plate 555 and the venting holes 578 in the shower plate 540. If desired, the second process gas can also be delivered to the interior space of the transfer distribution plate 555, ie, the second The air box 585 enters the film forming space through the venting holes 576 in the shower plate 540. The first process gas in the first gas tank 575 is mixed by the radicals and particles formed by the plasma excitation and the second process gas is mixed in the film formation space 505.

Figure 5B shows the state of the processing platform when the switch 580 is in the isotropic plasma mode of operation. In this position, the conductive container 545 is connected to a floating potential, and the shower plate 540 is connected to the RF matching circuit 512. The process gas was input in the same manner as in Fig. 5A. An RF power source from the RF matching circuit 512 is applied to the conductive shower plate 540, and the conductive shower plate 540 serves as an electrode for generating a plasma discharge (ie, direct plasma or in-situ plasma) in the film forming space 505. Then, a film is formed on the substrate by chemical reaction and polymerization.

Figure 5C shows a variation of the processing platform presented in Figures 5A and 5B. In the embodiment presented in Figure 5C, the processing platform can operate in adjacent or isotropic plasma mode as described in Figures 5A and 5B, which can also operate in adjacent and isotropic plasma modes simultaneously. . As shown in FIG. 5C, the switch 580 can either connect the conductive container 545 to a floating potential or it can be connected to the RF matching circuit 512 and can connect the shower plate 540 to the RF matching circuit 512 or to ground. Also, in FIG. 5C, the switch 580 can provide different frequencies for the conductive container 545 and the shower plate 540. For example, for simultaneous case of adjacent and in-situ plasma generation, the switch can connect the conductive container 545 to the low frequency. Or a high frequency RF generator and connect the shower plate 540 to another RF generator. In this case, the plasma can be produced in the first air box 575 and in the film forming space 505. The neutral radicals and gas particles in the plasma generated in the first gas tank 575 pass through the transfer distribution plate 555 The vent 574 and the venting opening 578 on the shower plate 540 enter the film forming space 505. They then add the plasma produced in the film forming space 505 and mix with the second process gas.

In the embodiment of FIGS. 5A-5C, it should be noted that when no RF power source is connected to the conductive container 545, the transfer distribution plate 555 or the shower plate 540, no plasma can be generated in the processing platform and only heat treatment is performed. . For example, in the embodiment of Figure 5C, the conductive container 545 can be connected to a floating potential and the shower plate 540 can be grounded. The heater 518 is then activated for thermal technical processing. Moreover, in the various embodiments described above that utilize a radio frequency configuration, the heater 518 can also be activated to assist in technical processing or cleaning operations.

Figure 5D shows another variation of the processing platform presented in Figures 5A and 5B. In the embodiment presented in FIG. 5D, the first gas transfer distribution device or the first gas transfer distribution device (ie, the conductive container 545) passes through the first control device 680a and the first RF source (ie, the high frequency radio frequency occurs) The 624a, the low frequency RF generator 626a and the RF matching circuit 612a) are connected; the second gas distribution device or the second gas distribution device (ie, the transfer distribution plate 555, the insulating plate 542 and the shower plate 540) are passed through the second Control device 680b is coupled to a second RF source (i.e., high frequency RF generator 624b, low frequency RF generator 626b, and RF matching circuit 612b). The first control device 680a can selectively connect or disconnect the first gas delivery distribution device or the first gas delivery distribution device to the first radio frequency source or the first gas delivery distribution device or the first gas delivery distribution The device is placed in a floating position; similarly, the second control device 680b can selectively apply the second gas The transfer distribution device or the second gas transfer distribution device is coupled to or disconnected from the second RF source or places the second gas delivery device or the second gas transfer device in a floating position. The combination of the first control device 680a and the second control device 680b at different locations allows the processing platform to selectively operate in an adjacent plasma mode, a homogenous plasma mode, or simultaneously in adjacent and isotropic plasma modes. under.

The following is an example of the formation of a tantalum nitride film using any of the above processing platforms. Although this processing paradigm can also be performed in a single reaction chamber with a single processing platform, here a small batch technical process is used. That is, one reaction chamber has four processing platforms, each of which is constructed in accordance with one embodiment described above. Four substrates are loaded into the reaction chamber, and each substrate is loaded correspondingly to a corresponding processing platform. Then, technical processing for forming a tantalum nitride film is simultaneously performed on four processing platforms. That is, the same technical steps are implemented in each processing platform to ensure that the same processing conditions are present in each processing platform.

First, all processing platforms operate in adjacent plasma generation modes. For example, the electrically conductive container 545 and the transfer distribution plate 555 are insulated from each other, and the electrically conductive container 545 is connected to a source of radio frequency power. The transfer distribution plate 555 is grounded, i.e., by connecting it to a grounded reaction chamber body, such as moving the second movable contact element down to contact the grounded reaction chamber body.

The first process gas group includes three types of gases. The first type of gas includes at least one of the following gases: ammonia, hydrazine, nitrogen, and hydrogen. The second type of gas includes at least one of the following gases: argon, helium, and xenon. The third type of gas consists of one It is composed of one or more hydrocarbons having the common molecular formula CxHy, wherein x ranges from 2 to 4, and y ranges from 2 to 10, such as acetylene (C2H2), ethylene (C2H4), and ethane (C2H6). The first process gas group is input to the conductive container 545 and then enters the first gas tank 575 through a vent hole in the bottom plate of the conductive container 545. The high frequency power or the high frequency power and the low frequency power are mixed and applied to the conductive container 545 and used as an electrode to generate a plasma discharge in the first gas tank 575, thereby forming radicals, ions in the first gas tank 575. And particles. Neutral free radicals and gas particles enter the film forming space from the first gas box 575 through venting holes located in the transfer distribution plate and the shower plate.

The second process gas group includes two types of gases. The first type of gas consists of at least one of the following three types of compounds. The first class of compounds consists of any compound including Si and H. The second class of compounds consists of any compound including Si, N and H. The third class of compounds consists of any compound including Si, N, C and H. The second type of gas includes at least one of the following gases: ammonia, hydrazine, nitrogen, hydrogen, argon, helium, and xenon. The above compounds including Si and H have a common chemical formula SixHy, wherein x ranges from 1 to 2, and y ranges from 4 to 6, such as SiH ₄ , Si ₂ H ₆ . The second class of compounds comprising Si, N and H have the common chemical formula (SiH3)-nNHn, wherein n ranges from 0 to 2, such as trimethylammonium alkylamine (TSA, (SiH3) 3N). The third class of compounds comprising Si, N, C and H have the common chemical formula (R-NH)4-nSiXn, wherein R is a hydrocarbyl group (which may be the same or different), X is H or halogen, and the range of n From 0 to 3, such as Bis (Tertiary Butyl Amino) Silane (BTBAS, (t-C4H9NH) 2SiH2) and Tetrakis (Diethyl Amino) Silane (TDAS, Si (N (C2H5) 2) 4. The above three types of compounds may be in liquid form. The compound needs to be vaporized first for chemical vapor deposition.

The second process gas group is input into the inner space of the transfer distribution plate, that is, the second gas tank 585, and is diffused and transported into the film formation space through the vent holes on the spray plate. The radicals and particles formed by the first process gas group plasma excitation in the first gas tank 575 are mixed with the second process gas group in the film formation space, and then a tantalum nitride film is formed on the surface of the substrate by chemical reaction and polymerization. The film has a carbon atom content of between 1% and 20%.

As can be seen from the above analysis, the isotope plasma mode can be used for film deposition, substrate surface treatment, surface treatment after deposition, and plasma cleaning of the reaction chamber. Adjacent plasma modes can be used for film deposition as well as plasma cleaning of the reaction chamber. The following examples illustrate the technical flow of technical processing using the reaction chamber of the present invention. Adjacent plasma is excited and deposited on the substrate to form a film. The substrate is then removed and the reaction chamber is cleaned with adjacent plasma. Alternatively, the in-situ plasma can be excited for chamber cleaning after the substrate is removed from the reaction chamber. Furthermore, the film can also be deposited using a co-located plasma operation while the cleaning process uses an adjacent plasma. Using other technical processes, the surface of the substrate can be surface treated with the same plasma and then deposited using adjacent plasma. After the film is deposited, it can be surface treated with the same plasma, and then the adjacent chamber is used to clean the reaction chamber.

Figure 6 shows an embodiment of a transfer distribution plate in accordance with one implementation of the present invention. The top of the transfer distribution plate 655 has a hemispherical notch 654 that faces the adjacent electric The slurry generating area, that is, the first air box 775. The hemispherical notch opens into the entrance aperture 674 such that the plasma particles drift down into the film forming space (not shown) in the upper portion of the substrate. The second air box 780 is formed from the lower half of the transfer distribution plate 655. There is a buffer plate 652 in the inner space of the conductive gas transfer distribution plate (i.e., the second gas tank 780) to uniformly diffuse and distribute the second process gas. The second process gas is introduced into the second air box 780 and then enters the film forming space through a venting opening 676 located at the bottom of the transfer distribution plate 654.

The diameter of the hemispherical surface 654 at the upper portion is greater than the diameter of the aperture 674. The hemispherical surface faces the first gas box 775 to avoid unstable plasma and arcing in the first gas box 775, and is increased by extending the plasma generating space to the portion toward the hole 674. The radical density.

The present invention has been described with reference to the preferred embodiments thereof, but all aspects are intended to be illustrative and not restrictive. In addition, other embodiments may be readily conceived by those skilled in the art from a study of the invention. The various aspects and/or elements of the embodiments described herein may be used alone or in any combination in plasma chamber technology. The features and embodiments of the description in the specification and the drawings are to be understood as illustrative only, and the true scope and spirit of the invention is defined by the following claims.

10‧‧‧Reaction chamber top cover/top cover

20‧‧‧Reaction chamber/semiconductor reaction chamber

21‧‧‧ lumen

40‧‧‧Reaction chamber base/base

41‧‧‧ Subject

42‧‧‧ upper surface

43‧‧‧lower surface

44‧‧‧Processing platform

45‧‧‧ peripheral border

50‧‧‧ shaft hole

52‧‧‧thiddle shaft hole

55‧‧‧Exhaust passage

62‧‧‧vacuum pump

63‧‧‧ catheter

100‧‧‧ system

101‧‧‧ Subject

102‧‧‧Top or external surface

103‧‧‧Bottom or internal surface

104‧‧‧ Cavity

105‧‧‧ gas transmission distribution assembly

107‧‧‧Pore

108‧‧‧Reaction room

108a‧‧‧Processing platform

108b‧‧‧Processing platform

108c‧‧‧Processing platform

108d‧‧‧Processing platform

110‧‧‧Reaction room

110a‧‧‧Processing platform

110b‧‧‧Processing platform

110c‧‧‧Processing platform

110d‧‧‧Processing platform

115‧‧‧Central Transfer Room/Transfer Room

120‧‧‧ Robotic arm

125‧‧‧Vacuum lock

130‧‧‧Vacuum lock

135‧‧‧Small environment

140a‧‧‧Standard wafer cassette or wafer cassette

140b‧‧‧Standard wafer cassette or wafer cassette

140c‧‧‧Standard wafer cassette or wafer cassette

150‧‧‧ positioning arm

300‧‧‧Processing platform

302‧‧‧First process gas

304‧‧‧second process gas

305‧‧‧filming space

310‧‧‧Substrate

312‧‧‧Axis/RF matching circuit

315‧‧‧ substrate support

316‧‧‧electrode

318‧‧‧heater

320‧‧‧Electrical reaction chamber main body / chamber wall

324‧‧‧High frequency RF generator / high frequency RF power source

325‧‧‧floor

326‧‧‧Low frequency RF generator / low frequency RF power source

330‧‧‧ openings

335‧‧‧ top assembly

340‧‧‧Electrical spray plate/spray plate

345‧‧‧Electrical container

350‧‧‧First insulation ring

355‧‧‧Conductive gas transmission distribution plate

360‧‧‧Second insulation ring

36‧‧‧Second movable contact element

370‧‧‧First movable contact element

372‧‧‧ venting holes

374‧‧‧ venting holes/holes

375‧‧‧ air box

376‧‧‧ venting holes/holes

380‧‧‧ air box

405‧‧‧filming space

412‧‧‧RF matching circuit

415‧‧‧ substrate support

440‧‧‧Electrical spray plate/spray plate

445‧‧‧Electrical container

455‧‧‧Conductive gas transmission distribution plate/transfer distribution plate

474‧‧‧Injection hole

475‧‧‧First air box

476‧‧‧Injection hole

478‧‧‧ hole

480‧‧‧second air box

485‧‧‧ switch

505‧‧‧filming space

512‧‧‧RF matching circuit

518‧‧‧heater

520‧‧‧Electrical reaction chamber body

540‧‧‧Electrical spray plate/spray plate

542‧‧‧Insulation board

545‧‧‧Electrical container

550‧‧‧Insulation ring/insulation ring

555‧‧‧Conductive gas transmission distribution plate/transfer distribution plate

572‧‧‧ venting holes

574‧‧‧ venting holes

575‧‧‧First air box

576‧‧‧ venting holes

578‧‧‧ venting holes

580‧‧‧Switch

585‧‧‧second air box

612a‧‧‧RF matching circuit

612b‧‧‧RF matching circuit

624a‧‧‧High Frequency RF Generator

624b‧‧‧High Frequency RF Generator

626a‧‧‧Low frequency RF generator

626b‧‧‧Low frequency RF generator

652‧‧‧Bubble board

654‧‧‧Half-spherical surface/hemispherical notch/transfer distribution plate

655‧‧‧Transfer distribution board

674‧‧‧Injection hole/hole

676‧‧‧ venting holes

680a‧‧‧First control unit

680b‧‧‧Second control device

775‧‧‧First air box

780‧‧‧second air box

The drawings included in the present specification, as a part of this specification, show embodiments of the present invention, and together with the specification, explain and describe the present invention. The principle and implementation of Ming. The drawings are intended to depict the main features of the embodiments in a schematic manner. The figures are not intended to describe each of the detailed features of the actual embodiments, nor the actual dimensions of the elements, and the elements are not drawn to scale.

Figure 1 shows a system with two reaction chambers in accordance with one embodiment of the present invention.

2 is a cross-sectional perspective view of a reaction chamber obtained in accordance with an embodiment of the present invention with the reaction chamber cap in an open position.

Figure 3A shows a processing platform constructed in accordance with one embodiment of the present invention.

Figure 3B shows the situation in which the reaction chamber of Figure 3A operates in an adjacent plasma generation mode.

Figure 3C shows the situation in which the reaction chamber of Figure 3A operates in a homo- or direct plasma generation mode.

Figure 4A shows another processing platform constructed in accordance with one embodiment of the present invention.

Figure 4B shows the situation in which the reaction chamber of Figure 4A operates in an adjacent plasma generation mode.

Figure 4C shows the situation in which the reaction chamber of Figure 4A operates in a homo- or direct plasma generation mode.

Figures 5A and 5B show yet another processing platform constructed in accordance with one embodiment of the present invention.

Figures 5C and 5D depict implementations of two variations of the processing platform of Figures 5A and 5B.

Figure 6 shows an example of a transfer distribution plate implemented in accordance with one embodiment of the present invention.

10‧‧‧Reaction chamber top cover/top cover

20‧‧‧Reaction chamber/semiconductor reaction chamber

21‧‧‧ lumen

40‧‧‧Reaction chamber base/base

41‧‧‧ Subject

42‧‧‧ upper surface

43‧‧‧lower surface

44‧‧‧Processing platform

45‧‧‧ peripheral border

50‧‧‧ shaft hole

52‧‧‧thiddle shaft hole

55‧‧‧Exhaust passage

62‧‧‧vacuum pump

63‧‧‧ catheter

101‧‧‧ Subject

102‧‧‧Top or external surface

103‧‧‧Bottom or internal surface

104‧‧‧ Cavity

105‧‧‧ gas transmission distribution assembly

107‧‧‧Pore

Claims (30)

A plasma reaction chamber comprising: a reaction chamber body having a plurality of processing platforms disposed therein; a plurality of rotatable substrate holders, each of the substrate holders being disposed corresponding to the processing platforms Each of the plurality of plasma generating regions co-located with the plasma in the reaction zone, each of the plasma generating regions co-located with the plasma in the reaction zone is located above each of the substrate holders a plurality of adjacent plasma generating regions, each of the adjacent plasma generating regions being located above each corresponding plasma generating region co-located with the plasma participating reaction region, and participating with the corresponding plasma The reaction zone is in communication with the plasma generating zone co-located; and an RF energy source is coupled to each of the adjacent plasma generating zones. The plasma reaction chamber of claim 1, further comprising: a first gas delivery system coupled to each of the adjacent plasma generating regions; and a second gas delivery system, the A second gas delivery system is coupled to each of the plasma generating zones co-located with the plasma in the reaction zone. The plasma reaction chamber of claim 2, wherein the second gas delivery system also transports gaseous particles from each adjacent plasma generating zone to a corresponding plasma generating zone in which the plasma participates in the reaction zone. The plasma reaction chamber of claim 1, which also includes an exhaust system for connecting all of the processing platforms to the same vacuum pump. The plasma reaction chamber of claim 1, the RF energy source comprising a high frequency RF generator, a low frequency RF generator, and an RF matching circuit. The plasma reaction chamber of claim 1 further comprising a switching device for controlling the excitation of the plasma in the adjacent plasma generating region and the plasma generating region co-located with the plasma participating in the reaction region. A plasma reaction chamber according to claim 1, which also includes a heater disposed in each of the substrate holders. A plasma reaction chamber comprising: a reaction chamber body; a rotatable substrate holder disposed in the reaction chamber body; a first gas transfer distribution device; and a second gas transfer distribution device coupled to the first gas The distribution devices are spaced apart from each other and electrically insulated from the first gas transfer distribution device and the reaction chamber body, wherein an adjacent plasma generation region is formed between the first gas transfer distribution device and the second gas transfer distribution device, Forming a plasma generating region in the same position as the plasma participating in the reaction zone between the second gas transfer distributing device and the substrate support, the first gas transfer distributing device transporting a first processing gas to the adjacent plasma generating device a second gas transfer distribution device transports a second process gas to the plasma generation zone co-located with the plasma in the reaction zone, the second gas transfer distribution device also plasma from adjacent plasma generation zones The particles are transported to a plasma generating zone co-located with the plasma in the reaction zone; a radio frequency source coupled to the first gas transfer distribution device; and a switching device for the second Distribution means for selectively transmitting member Connect to a RF source or ground. The plasma reaction chamber of claim 8, the switching device comprising a movable mechanical contact element for selectively connecting the second gas delivery distribution device to the first gas delivery distribution device or to the reaction chamber body. The plasma processing chamber of claim 8, the switching device comprising an electronic changeover switch. The plasma reaction chamber of claim 8, the second gas transfer distribution device comprising a conductive shower plate, an insulating plate connected to the conductive shower plate, and a conductive gas transfer connected to the insulating plate A distribution plate in which the transfer distribution plate is grounded, the switching device selectively connecting the conductive shower plate to a radio frequency source or ground. The plasma reaction chamber of claim 11, the switching device selectively connecting the first gas delivery distribution device to a radio frequency source or to a floating potential. The plasma reaction chamber of claim 8, the second gas transfer distribution device comprising a shower plate and a conductive gas transfer distribution plate connected to the shower plate, wherein the conductive gas transfer distribution plate comprises a plurality of adjacent gas-facing distribution plates Hemispherical pores in the plasma generating zone. The plasma reaction chamber of claim 13 further comprising a buffer plate for uniformly diffusing and distributing the second process gas. A plasma reaction chamber according to claim 8 which also includes a heater disposed in the substrate holder. The plasma reaction chamber of claim 8, the RF source comprising a high frequency RF source, a low frequency RF source, and a RF matching circuit. A plasma reaction chamber comprising: a reaction chamber body having a plurality of processing platforms disposed therein; a plurality of rotatable substrate holders, each of the substrate holders being disposed in each of the processing platforms; a plurality of first a gas distribution device, each of the first gas distribution devices is disposed in a corresponding processing platform; a plurality of second gas distribution devices, each of the second gas distribution devices is disposed in a corresponding processing region Separating from a corresponding first gas transfer distribution device and electrically insulated from the corresponding first gas transfer distribution device and the reaction chamber body, wherein: in each respective processing region, at the first gas transfer distribution device Forming an adjacent plasma generating region with the second gas transfer distributing device, and forming a plasma generating region in the same position as the plasma participating in the reaction zone between the second gas transfer distributing device and the substrate support, the first gas The transfer distribution device delivers the first process gas to the adjacent plasma generation zone, and the second gas transfer distribution device delivers the second process gas to the opposite phase with the plasma a plasma generating region in the same position, the second gas transfer distributing device also transports the plasma particles from the adjacent plasma generating region to the plasma generating region in the same position as the plasma participating in the reaction zone; the RF source, and the plurality of A first gas transfer distribution device is coupled; and a switching device for selectively connecting the second gas transfer distribution device to the RF source or to ground. The plasma reaction chamber of claim 17, which also includes an exhaust system that connects all of the processing platforms to the same vacuum pump. The plasma reaction chamber of claim 18, the RF energy source comprising a high frequency RF generator, a low frequency RF generator, and a RF matching circuit. In the plasma reaction chamber of claim 16, the switching device is also operative to excite the plasma in each adjacent plasma generating zone and each of the plasma generating zones co-located with the plasma participating in the reaction zone. The plasma reaction chamber of claim 20, the switching device comprising a movable mechanical contact element for selectively connecting each second gas delivery distribution device to a first gas delivery distribution device corresponding thereto or to the reaction chamber main body. The plasma processing chamber of claim 20, the switching device comprising an electronic changeover switch. The plasma reaction chamber of claim 16, wherein each of the second gas transfer distribution devices comprises a conductive shower plate, an insulating plate connected to the conductive shower plate, and a conductive gas transfer distribution connected to the insulating plate. A plate in which the conductive gas transfer distribution plate is grounded, the switching device selectively connecting the conductive shower plate to the first gas transfer distribution device or to ground. The switching device also selectively connects the first gas delivery distribution device to the RF source or to a floating potential, as in the plasma reaction chamber of claim 23. The plasma reaction chamber of claim 16, wherein each of the second gas transfer distribution devices comprises a shower plate and a conductive gas transfer distribution plate connected to the shower plate, wherein the conductive gas transfer distribution plate comprises a plurality of faces Hemispherical pores adjacent to the plasma generating zone. In the plasma reaction chamber of claim 8, the switching device is also selectively The two gas transfer distribution devices are connected to a floating potential. The switching device also selectively connects the second gas delivery distribution device to the floating potential as in the plasma reaction chamber of claim 17. A plasma reaction chamber comprising: a reaction chamber body; a rotatable substrate holder disposed in the reaction chamber body; a first gas transfer distribution device; and a second gas transfer distribution device coupled to the first gas The distribution devices are spaced apart from each other and electrically insulated from the first gas transfer distribution device and the reaction chamber body, wherein an adjacent plasma generation region is formed between the first gas transfer distribution device and the second gas transfer distribution device, Forming a plasma generating region in the same position as the plasma participating in the reaction zone between the second gas transfer distributing device and the substrate support, the first gas transfer distributing device transporting a first processing gas to the adjacent plasma generating device a second gas transfer distribution device transports a second process gas to the plasma generation zone co-located with the plasma in the reaction zone, the second gas transfer distribution device also plasma from adjacent plasma generation zones The particles are transported to a plasma generating region co-located with the plasma in the reaction zone; a first RF source coupled to the first gas transfer device; and a second RF source, Two gas delivery means connected to distribution. The plasma reaction chamber of claim 28, further comprising a first control device coupled to the first RF source for selectively selecting the first RF source and the first gas delivery device Ground connection or Disconnect or place the first gas delivery distribution device at a floating potential. The plasma reaction chamber of claim 28, further comprising a second control device coupled to the second RF source for selectively selecting the second RF source and the second gas delivery device The ground phase is connected or disconnected or the second gas delivery distribution device is placed at a floating potential.