CN202322992U - Target assembly capable of preventing deformation by impact of high-pressure cooling water - Google Patents
Target assembly capable of preventing deformation by impact of high-pressure cooling water Download PDFInfo
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- CN202322992U CN202322992U CN 201120424226 CN201120424226U CN202322992U CN 202322992 U CN202322992 U CN 202322992U CN 201120424226 CN201120424226 CN 201120424226 CN 201120424226 U CN201120424226 U CN 201120424226U CN 202322992 U CN202322992 U CN 202322992U
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- 239000013077 target material Substances 0.000 claims description 81
- 238000000034 method Methods 0.000 abstract description 37
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Abstract
The utility model provides a target assembly capable of preventing deformation by the impact of high-pressure cooling water. The target assembly comprises a target and a back plate, wherein the target comprises a sputtering face and a back face; the back plate comprises a fixed face and a back face; the fixed face of the back plate is fixedly connected with the back face of the target; the back face of the back plate is provided with a pressure buffer slot; and the pressure buffer slot is in a single slope-down state from an opening to the bottom. In a magnetically-controlled sputtering process, the pressure buffer slot can be used for effectively decomposing an impact force of high-pressure cooling water to the back plate in the cooling process and slowing the direct impact force of the high-pressure cooling water to the front face of the back plate, so that the problem of target assembly deformation caused by the impact force of the high-pressure cooling water to the back plate is avoided, and the flatness of the target assembly is kept.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to prevent effectively that in magnetron sputtering substrate coating technology high-pressure cooling water from impacting the target material assembly that causes distortion.
Background technology
In the large-scale in modern times integrated circuit fabrication process, magnetron sputtering becomes the most excellent substrate coating technology with advantages such as its sputtering raste are high, the substrate temperature rise is low, film-Ji bonding force is good.
In the magnetron sputtering membrane process, target material assembly constitutes by the target that meets sputtering performance with backboard that said target combines, has certain intensity.Said backboard not only is assembled in the sputter base station at said target material assembly and plays a supporting role, and its have the conduction heat effect, be used for the heat radiation of magnetron sputtering technique target.In the magnetron sputtering membrane process, the target material assembly Working environment is comparatively harsh.Its temperature higher (as 300 ℃ to 500 ℃), target material assembly are in the bigger magnetic field of high-voltage electric field and magneticstrength, and positive 10
-9Under the high vacuum environment of Pa, receive various high energy ion bombardments, cause target generation sputter, and neutral target atom that sputters or molecule deposition form film on substrate.The temperature of device target material assembly can sharply raise, thereby needs through the backboard transmission in the target material assembly and the heat of dissipation target rapidly, and avoids consequent target distortion, and target shortens, influences problems such as substrate coating quality work-ing life.In target material assembly magnetron sputtering practice process, the back side of meeting toward back plate adopts high-pressure cooling water to impact measure for this reason, thereby improves the heat radiation function of target material assembly.
High-pressure cooling water impacts the heat radiation that the target material assembly backboard can effectively be accelerated target, improves coating quality, but in putting into practice use, we find, because high temperature has been accelerated the target material assembly deliquescing, and target is in 10
-9Under the high vacuum of Pa, and the back side of backboard receives long water coolant and impacts, and is formed with huge pressure difference thus in the both sides up and down of target material assembly, and this makes and form depression at the back side of backboard, and the front of corresponding target is and raises up.This also directly has influence on the work-ing life of target material assembly, will be used for fixing the porcelain ring top distortion of target material assembly sometimes, pushes up broken; What is more, because the positive convexity of target, the deviation between directly causing at the bottom of target each several part and the silicon wafer-based causes the abnormal parameters of plated film, and influences the follow-up unicircuit quality of processing thus.
The utility model content
The problem that the utility model solves has provided a kind of target material assembly that prevents the high-pressure cooling water shock-produced deformation, and it has overcome above-mentioned target material assembly in magnetron sputtering technique, and high-pressure cooling water impacts the problem that the target material assembly distortion is caused at the backboard back side.
For addressing the above problem, a kind of target material assembly that prevents the high-pressure cooling water shock-produced deformation of the utility model comprises: target and backboard; Said target comprises the sputter face and the back side; Backboard comprises the fixed face and the back side, and said backboard fixed face is fixedly connected with the target back side, wherein; The back side of said backboard offers the pressure buffer groove, and said pressure buffer groove is dull downward-sloping shape by opening part to bottom land.During use, said pressure buffer groove can effectively be alleviated the surging force of high pressure water water coolant for the backboard back side, prevents the target material assembly distortion.
The above-mentioned target material assembly that prevents the high-pressure cooling water shock-produced deformation, wherein optional, said pressure buffer groove is made as the conical socket structure, and the further preferred cone-shaped groove structure that adopts of the pressure buffer groove of pyramidal structure.And optional, domatic to be arranged to linear pattern skewed with the inwall of the pressure buffer groove of said structure, promptly reduces to the bottom land minimal path by pressure buffer channel opening arbitrfary point along inwall and be straight line.
The pressure buffer groove of said structure is opened in the center of said backboard alternatively.
Optional; The pressure buffer groove of above-mentioned structure; Its bottom land to the distance (being the degree of depth of pressure buffer groove) at the said backboard back side is set at 1: 4 with the thickness ratio of said backboard～and 1: 5, and the pressure buffer groove inwall gradient (being the angle that the back side is of the inwall and the backboard of pressure buffer groove) is 0.8 °～1.5 °.If when said backboard was circular, the bore of said pressure buffer groove was 0.52～0.57 with the diameter of said backboard ratio.
The utility model is optional is applied to the target material assembly that said backboard adopts the aluminium or the alloy of aluminium to process.And said pressure buffer groove generally can adopt mechanical processing technique to form.
Compared with prior art; The utlity model has following advantage: the utility model is offered the pressure buffer groove at the backboard back side of target material assembly; In magnetron sputtering process; The pressure buffer groove can decompose the surging force of process of cooling mesohigh water coolant for backboard effectively, slows down the positive directly surging force of high-pressure cooling water for backboard, thereby has avoided backboard to cause the target material assembly problem on deformation owing to bearing the impact of high-pressure cooling water for backboard; Guarantee the planarization of target material assembly, and guarantee the coating quality that the employing magnetron sputtering technique is processed thus;
And in possibility, said pressure buffer groove is made as the conical socket structure, and the further preferred cone-shaped groove structure that adopts; And, be more conducive to decompose rapidly the surging force of high-pressure cooling water for backboard with the domatic skewed structure of linear pattern of being arranged to of inwall of the pressure buffer groove of said structure, and reach in magnetron sputtering technique, keep the planarization purpose of target material assembly.
Description of drawings
Fig. 1 is the structural representation that the utility model prevents the target material assembly of high-pressure cooling water shock-produced deformation;
Fig. 2 is the structural representation of the target material assembly of the utility model embodiment 1;
Fig. 3 adopts the target material assembly of the utility model embodiment 1 at magnetron sputtering structural representation later;
Fig. 4 is under the magnetron sputtering condition identical with the target material assembly of embodiment 1, and the target of Comparative Examples 1 is at magnetron sputtering structural representation later;
Fig. 5 is the target material assembly structural representation of the utility model embodiment 2;
Fig. 6 is the target material assembly structural representation of the utility model embodiment 3;
Fig. 7 is the target material assembly structural representation of the utility model embodiment 4;
Fig. 8 be the pressure buffer groove among Fig. 2 A-A to cross-sectional view;
Fig. 9 be the pressure buffer groove among Fig. 6 B-B to cross-sectional view;
The C-C of the pressure buffer groove among this Fig. 7 of Figure 10 to cross-sectional view.
Embodiment
Fig. 1 is a kind of structural representation that prevents the target material assembly of high-pressure cooling water shock-produced deformation of the utility model, and it comprises target 2 and the backboard 1 that is connected with target 2, and wherein, the back side of target 2 is fixedly connected with the fixed face of backboard 1.And target 2 can be designed to multiple shapes (shape that comprises regular and irregular) such as circle, rectangle, annular, taper according to the actual requirement of applied environment, sputtering equipment with backboard 1, and its thickness also can specifically be provided with according to different needs.And the material of target 2 and backboard 1 can elect according to concrete needs equally, generally comprises the materials such as alloy of aluminium, copper, tungsten, titanium and above-mentioned differing materials.
The utility model can be employed in the back side of backboard 1 and adopt mechanical processing technique to offer pressure buffer groove 3; Be used for decomposing magnetron sputtering process; High-pressure cooling water is for the surging force of backboard 1; Alleviate backboard 1 because of the surging force that high-pressure cooling water receives, prevent the distortion of target material assembly, thereby be specially adapted to the backboard that the lower metal of aluminium or the hardness such as alloy of aluminium and alloy thereof are processed.
Described pressure buffer groove 3 inwalls are dull downward-sloping shape by opening part to bottom land, and its opening can be as circular, oval, and different shape such as regular polygon, and its inwall is domatic also can be the arc gradient, or the linear pattern gradient.Wherein, Domatic with respect to arc, more preferably linear pattern is domatic, when high-pressure cooling water surge pressure dashpot 3 inwalls; The domatic design of straight line is more conducive to decompose rapidly the surging force of high-pressure cooling water for backboard, alleviates the surging force of high-pressure cooling water for target material assembly.Said pressure buffer groove 3 is chosen as conical socket, cone-shaped groove structure especially, and this design is decomposed more fully, rationally for the surging force of high-pressure cooling water, also makes target material assembly stressed more even.And further can be preferably the linearly cone-shaped groove of the type gradient of inwall.
Said pressure buffer groove 3 is preferably disposed on the center of said backboard 1.This is because in the magnetron sputtering membrane process; Under the effect in electric field and magnetic field, the etching degree at each position of target makes a difference, and it is essentially round target 2 centers; On target 2, can form one " etching runway "; Wherein, bigger in the etching degree in " etching runway " outside, and it is less to be positioned at the etching degree of " etching runway " inside part.In magnetron sputtering technique, the target side and the backboard side of target material assembly exist bigger pressure difference, the thickness of backboard 1 directly influence its for the transmission of the support of target 2 and heat with dredge.So under different magnetic control conditions, the thickness of different backboards 1 also directly influences it for the support of target 2 and the transmission of heat.In the utility model, the structure design of pressure buffer groove is effectively decomposed the surging force of high-pressure cooling water for target when not hindering magnetron sputtering technique, thereby avoids the target material assembly distortion, guarantees the morphological structure of target material assembly.And its actual effect can below specific embodiment in specifically confirmed.
Size about said pressure buffer groove 3; Can be according to target in the target material assembly 2 and backboard 1 structure; And working conditions is different and do corresponding adjustment; And its preferred parameter does, the thickness (d5-d4) of the depth d 7 of pressure buffer groove 3 and said backboard 1 than between in 1: 4～1: 5, and the angle [alpha] that the back side is of the inwall of said pressure buffer groove 3 and backboard 1 is 0.8 °～1.5 °; If said backboard 1 be a circle, the bore d3 of then said pressure buffer groove 3 and the diameter d 1 of said backboard 1 are than being 0.52～0.57.In the utility model, the bore of said pressure buffer groove 3 is the be separated by distances of point-to-point transmission farthest of pressure buffer groove 3 edge of opening, as, if pressure buffer groove 3 is a cone-shaped groove, its bore is the opening diameter length of cone-shaped groove; And if pressure buffer groove 3 is the square conical socket, then its bore is the diagonal distance of square slot opening.
Thereby below we through specific embodiment for the utility model and adopt the beneficial effect that the utility model obtained to do further to set forth, but the protection domain of the utility model is not limited to each following embodiment.
Embodiment 1:
Shown in Figure 2 in conjunction with reference, the target 2 of the target material assembly in the utility model adopts circle with backboard 1, and wherein, backboard 1 is an aluminium matter backboard, and the diameter d 2 of target 2 is 341.53cm, and thickness is that d4 is 8.89cm; The diameter of backboard 1 is that d1 is 421.13cm, and thickness (d5-d4) is 8.38cm.Wherein, offer pressure buffer groove 3 in the center, the back side of backboard 1, said pressure buffer groove 3 is the cone shape groove, and the linearly type inclination (as shown in Figure 8) of its inwall 31.Wherein, the summit of said pressure buffer groove 3 bottoms is 2.01cm to the back side of backboard 1 apart from d7, and its opening diameter d3 is 228.60cm (angle [alpha] at the back side of the inwall of pressure buffer groove 3 and backboard 1 is about 1 °); Through test determination, at magnetron sputtering technique, in the process of cooling of backboard 1; When high-pressure cooling water impacts backboard 1; High-pressure cooling water hits to said pressure buffer groove 3, because said pressure buffer groove 3 inwalls are skewed, makes high-pressure cooling water be able to rapid decomposition for the surging force of backboard 1; Thereby effectively alleviate the surging force of high-pressure cooling water, can effectively avoid problems such as target material assembly distortion for target material assembly.
Effect confirms: with embodiment 1 and Comparative Examples 1 magnetron sputtering membrane process at the bottom of making silicon wafer-based under the identical magnetron sputtering condition, and both the target material assembly structure behind the magnetron sputtering membrane process analyzed.
Wherein, Comparative Examples 1 is target material assembly commonly used, and it comprises target and backboard, and its target is all identical with embodiment 1 with backboard size, syndeton, and just its backboard back side is smooth shape structure.
The target material assembly that Fig. 3 and Fig. 4 are respectively the utility model embodiment 1 and Comparative Examples 1 carries out the structural representation of the target material assembly behind the magnetron sputtering; Wherein, backboard 1 ' is the structural form after the utility model embodiment 1 uses with target 2 ': backboard 1 " and target 2 " be that Comparative Examples 1 is used structural form later.Target 2 among the figure " and 2 ' in curve 4 receive " corrosion curve " of etched degree for the reaction target.Among the figure; Curve 4 is explained in magnetron sputtering process, compared to the target of middle portion near the crooked amplitude of target both sides big (on whole target, forming " etching runway "); The ion bombardment dynamics that receives near the target of Outboard Sections is bigger, thereby it receives extent of corrosion bigger.
As shown in Figure 4, behind magnetron sputtering, the backboard 1 of Comparative Examples " and target 2 " middle portion be the shape that raises up; Wherein, target 2 " upper surface (being sputter face) 21 " be intermediate projections (protrusion distance d6), and with respect to Comparative Examples; Among Fig. 3; The embodiment 1 of the utility model is behind magnetron sputtering, and obvious distortion does not take place the target material assembly structural form, the smooth shape before target 2 ' upper surface 21 ' (being sputter face) still keeps using.It is former because in magnetron sputtering process, each position of target receives that the dynamics of ion bombardment is different; Cause in magnetron sputtering process, each position of target inequality of being heated, wherein; Target to receive the ion bombardment dynamics near Outboard Sections (i.e. the outside of " etching runway ") bigger, thereby produce bigger heat, and the ion bombardment dynamics that the middle portion of target is received is less; The heat that produces is also less relatively, causes the target each several part inequality of being heated like this, and is yielding; In order to discharge the suffered heat of target material assembly, in the target process of cooling, the target backboard constantly receives high-pressure cooling water and impacts in addition.When target partly is positioned under the high vacuum environment, backboard receives high-pressure cooling water again when impacting, and it is poor that target material assembly target side and backboard side can form immense pressure, is out of shape if the backboard unbalance stress then quickens target material assembly probably.In the target material assembly magnetron sputtering process; When the target back side received from unidirectional high-pressure cooling water surging force F, the pressure buffer groove 3 among the embodiment 1 can resolve into f1 (sin α * F) and f2 (cos*F) with surging force F rapidly because of its face of slope structure; And divide each power to all directions; Make the stressed more even of backboard 1 ', alleviated backboard 1 ' same point and received the direct surging force of high-pressure cooling water, thereby effectively avoided backboard 1 ' local deformaton; The smooth form that in use, still can keep target material assembly.And than embodiment 1, the backboard 1 of Comparative Examples " back side is smooth shape, when receiving power F and impact; it can't timely and effective dispersion force F; cause local pressure, and local pressure for a long time, and influenced down by the pressure difference of target material assembly target and backboard both sides; caused backboard 1 " and target 2 " local deformaton, cause the smooth target backboard 1 of script " the back side 21 " obviously be and raise up.The structure of the taper pressure buffer groove 3 that " corrosion curve " in Fig. 3 and 4 the target combines to offer on the backboard 1 with the target material assembly of the utility model embodiment among Fig. 1 and Fig. 2; Described pressure buffer groove 3 is positioned at the center of backboard 1; Promptly compared near backboard 1 peripheral part; Backboard 1 middle portion thickness is less; This structure also just in time is complementary by ion bombardment dynamics size with target, the thickness of target different piece is directly proportional with the ion bombardment dynamics of receiving like this, has guaranteed the enough holding power of backboard for target.Certainly, pressure buffer groove 3 concrete structures on the backboard 1 should adjust according to the material of target and concrete magnetron sputtering condition.
As shown in Figure 5, in the present embodiment 2, the size of target material assembly mesonotal shield 1 and target 2, size with and mode of connection all identical with embodiment 1, its difference is, offers the pressure buffer groove 3 that is positive eight limit tapers in said backboard 1 center.The pressure buffer groove 3 groove depth 1.75cm of said positive eight limit tapers, its opening bore d3 (on its octagon opening, being the distance between symmetric two summits with the center) is 235.5cm.
After embodiment 2 made the silicon substrate egative film under the condition identical with the magnetron sputtering technique of embodiment 1 making the magnetron sputtering plating technological test; We find; Compare before using target material assembly later and using; Tangible deformation characteristics does not take place in its structural form, and the upper surface of target 2 (being sputter face) still keeps smooth form.Explain that in magnetron sputtering process, this pressure buffer groove 3 that is just polygon conical configuration can effectively be alleviated the surging force of the suffered high-pressure cooling water of backboard 1 equally, prevents target material assembly generation deformation.
As shown in Figure 6, in the present embodiment, backboard 1 ovalize is offered conical pressure buffer groove 3 in the center, the back side of backboard 1, and its inwall 32 is circular arc (as shown in Figure 9).1/5 of the thickness that said conical pressure buffer groove 3 groove depth are said oval backboard 1, and the angle [alpha] at the back side of the inwall 32 of pressure buffer groove 3 and backboard 1 is 0.8 °.
Identical with embodiment 1 and 2, target 2, backboard 1 shape, the size of making and embodiment 3, syndeton is identical, and just backboard 1 back side is Comparative Examples 3 target material assemblies of planarization.Embodiment 3 is made the magnetron sputtering membrane process with Comparative Examples 3 under identical condition.After the use, the target material assembly of embodiment 3 and Comparative Examples 3 is contrasted, its result is similar with 2 with embodiment 1.Find that after the use, the middle portion of the target material assembly of Comparative Examples 3 is the shape that raises up towards the target side.And before embodiment 3 compared use, obvious variation did not take place in its structure.Hence one can see that, and in magnetron sputtering process, present embodiment 3 pressure buffer grooves 3 are alleviated the surging force of cooling high pressure water for target material assembly well, avoid target material assembly to deform.
Embodiment 4
As shown in Figure 7, among the embodiment, backboard 1 ovalize of the utility model target material assembly is offered the oval pressure buffer groove 3 that is complementary with said backboard 1 shape in the center of backboard 1, and its inwall 33 is circular-arc (shown in figure 10).The depth d 7 of said compensator or trimmer pressure groove 3 is 1/4 of backboard 1 thickness (d5-d4).Said pressure buffer groove 3 bores (that is the major axis of the elliptical openings of said compensator or trimmer pressure groove 3) are 11: 20 with the ratio of the major radius of said backboard 1.
Identical with embodiment 1 with embodiment 3, target 2, backboard 1 shape, the size of making and embodiment 4, syndeton is identical, and just backboard 1 back side is the target material assembly of planarization, Comparative Examples 4.Embodiment 4 is made the magnetron sputtering membrane process with Comparative Examples 4 under identical condition.After the use, the target material assembly of embodiment 4 and Comparative Examples 4 is contrasted, its result is similar with 3 measuring result with embodiment 1,2.Find that after the use, the middle portion of the target material assembly of Comparative Examples 4 is the shape that raises up towards the target side.And before embodiment 4 compared use, obvious variation did not take place in its structure.Hence one can see that, and in magnetron sputtering process, in the present embodiment 4, oval-shaped pressure buffer groove 3 also can be alleviated the surging force of cooling high pressure water for target material assembly well, avoids target material assembly to deform.
Behind the magnetron sputtering of process for each embodiment and Comparative Examples; The plated film comparative analysis that each embodiment and Comparative Examples form at the bottom of the silicon wafer-based is found: behind each embodiment magnetron sputtering of the utility model at the formed smooth plated film of silicon chip substrate surface; Carry out the plated film that magnetron sputtering forms by Comparative Examples, the thickness of intermediate portion is slightly larger than the plated film of peripheral part, its major cause be since the target of Comparative Examples in magnetron sputtering process; Its backboard back side receives the brute force of high-pressure cooling water and impacts; The immense pressure of the target side of target material assembly and backboard side existence is poor in addition, thereby makes target deform, and target middle portion assembly raises up; And directly cause the distance difference between target each several part and the film plating substrate; Thereby cause coating film thickness difference on the substrate, and reduced the whole uniformity coefficient of plated film thus, influence the effect of plated film.And, because the deformation quantity of target material assembly is big, makes the porcelain ring top that is used for fixing target material assembly be out of shape, even cracked situation possibly occur that this can cause the magnetron sputtering plating instrument damage, destroys magnetron sputtering and carries out.
In sum; Adopt the utility model, in magnetron sputtering process, its pressure buffer groove can decompose the surging force of high-pressure cooling water for backboard effectively; Slow down the positive directly surging force of high-pressure cooling water for backboard; Thereby avoided backboard to cause the backboard problem on deformation, guaranteed the planarization of backboard, and guaranteed the quality of magnetron sputtering plating thus owing to bearing the impact of high-pressure cooling water for backboard.
Though the utility model with preferred embodiment openly as above; But it is not to be used for limiting the utility model; Any those skilled in the art are in spirit that does not break away from the utility model and scope; Can make possible change and modification, so the protection domain of the utility model should be as the criterion with the scope that the utility model claim is defined.
Claims (8)
1. a target material assembly that prevents the high-pressure cooling water shock-produced deformation comprises target and backboard; Said target comprises the sputter face and the back side; Backboard comprises the fixed face and the back side, and said backboard fixed face is fixedly connected with the target back side, it is characterized in that; The back side of said backboard offers the pressure buffer groove, and said pressure buffer groove is dull downward-sloping shape by opening part to bottom land.
2. the target material assembly that prevents the high-pressure cooling water shock-produced deformation according to claim 1 is characterized in that, said pressure buffer groove is a conical socket.
3. the target material assembly that prevents the high-pressure cooling water shock-produced deformation according to claim 2 is characterized in that, said pressure buffer groove is a cone-shaped groove.
4. according to each described target material assembly that prevents the high-pressure cooling water shock-produced deformation of claim 1 to 3, it is characterized in that the domatic linearly type of described pressure buffer groove inwall tilts.
5. the target material assembly that prevents the high-pressure cooling water shock-produced deformation according to claim 4 is characterized in that, the distance at the back side of the bottom land of said pressure buffer groove to said backboard is 1: 4～1: 5 with the thickness ratio of said backboard.
6. the target material assembly that prevents the high-pressure cooling water shock-produced deformation according to claim 5 is characterized in that, said backboard is circular, and the bore of said pressure buffer groove is 0.52～0.57 with the diameter of said backboard ratio.
7. the target material assembly that prevents the high-pressure cooling water shock-produced deformation according to claim 5 is characterized in that, the said pressure buffer groove inwall gradient is 0.8 °～1.5 °.
8. the target material assembly that prevents the high-pressure cooling water shock-produced deformation according to claim 1 is characterized in that said pressure buffer groove is opened in the center of said backboard.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201120424226 CN202322992U (en) | 2011-10-31 | 2011-10-31 | Target assembly capable of preventing deformation by impact of high-pressure cooling water |
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| CN 201120424226 CN202322992U (en) | 2011-10-31 | 2011-10-31 | Target assembly capable of preventing deformation by impact of high-pressure cooling water |
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| CN202322992U true CN202322992U (en) | 2012-07-11 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103510040A (en) * | 2013-10-25 | 2014-01-15 | 无锡舒玛天科新能源技术有限公司 | Cooling device for thermal spraying rotating target material |
| CN105834594A (en) * | 2016-04-29 | 2016-08-10 | 中国航空工业集团公司北京航空制造工程研究所 | System and method for cutting and correcting workpiece through lasers |
| CN108149205A (en) * | 2016-12-02 | 2018-06-12 | 宁波江丰电子材料股份有限公司 | A kind of anti-bending backboard |
-
2011
- 2011-10-31 CN CN 201120424226 patent/CN202322992U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103510040A (en) * | 2013-10-25 | 2014-01-15 | 无锡舒玛天科新能源技术有限公司 | Cooling device for thermal spraying rotating target material |
| CN103510040B (en) * | 2013-10-25 | 2015-06-24 | 无锡舒玛天科新能源技术有限公司 | Cooling device for thermal spraying rotating target material |
| CN105834594A (en) * | 2016-04-29 | 2016-08-10 | 中国航空工业集团公司北京航空制造工程研究所 | System and method for cutting and correcting workpiece through lasers |
| CN105834594B (en) * | 2016-04-29 | 2017-12-15 | 中国航空工业集团公司北京航空制造工程研究所 | A kind of system and method for application laser cutting and calibration of workpieces |
| CN108149205A (en) * | 2016-12-02 | 2018-06-12 | 宁波江丰电子材料股份有限公司 | A kind of anti-bending backboard |
| CN108149205B (en) * | 2016-12-02 | 2020-06-05 | 宁波江丰电子材料股份有限公司 | Anti-bending back plate |
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Address after: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Patentee after: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Address before: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Patentee before: Ningbo Jiangfeng Electronic Materials Co., Ltd. |
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Granted publication date: 20120711 |