CN203774326U - 一种具有无线通信功能的动态存储bga封装模块 - Google Patents

一种具有无线通信功能的动态存储bga封装模块 Download PDF

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CN203774326U
CN203774326U CN201420051798.8U CN201420051798U CN203774326U CN 203774326 U CN203774326 U CN 203774326U CN 201420051798 U CN201420051798 U CN 201420051798U CN 203774326 U CN203774326 U CN 203774326U
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dynamic memory
nude film
carrier substrate
package module
radio communication
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袁正红
潘计划
毛忠宇
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Shenzhen Fastprint Circuit Tech Co Ltd
Yixing Silicon Valley Electronic Technology Co Ltd
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Shenzhen Fastprint Circuit Tech Co Ltd
Yixing Silicon Valley Electronic Technology Co Ltd
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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Abstract

本实用新型公开了一种具有无线通信功能的动态存储BGA封装模块，其包括金线以及一载体基板，所述载体基板的下表面设有焊球，所述载体基板的上表面分别设有绑线焊盘、第一粘贴层以及第二粘贴层，所述第一粘贴层的上表面设有DRAM芯片裸片，所述第二粘贴层的上表面设有无线通信器芯片裸片；所述的绑线焊盘通过金线进而分别与DRAM芯片裸片以及无线通信器芯片裸片进行连接。本实用新型具有多功能的优点，而且能够便于与控制模块进行无线远距离数据读取，以及便于多个控制模块交替对其进行数据读取。本实用新型作为一种具有无线通信功能的动态存储BGA封装模块广泛应用于芯片封装领域中。

Description

一种具有无线通信功能的动态存储BGA封装模块
技术领域
本实用新型涉及芯片封装技术，尤其涉及一种具有无线通信功能的动态存储BGA封装模块。
背景技术
技术词解释：
DRAM：Dynamic Random Access Memory，即动态随机存取存储器。
随着电子产品向小型化、高密度化、高集成度和多功能化的方向迅速发展，现今只具备单一功能的封装模块器件已逐步不能满足行业的发展需要。而对于目前存储产品行业中的动态存储封装模块器件，即DRAM封装模块器件，其仅具有存储的功能，功能单一，因此，其已不符合该行业的发展需要，而且由于其仅具有存储的功能，因此，其与控制模块之间只能够通过有线金属传导的方式进行连接，这样则并不利于远距离与控制模块进行数据读取，以及不便于多个控制器交替对其进行数据读取。由此可知，发明一种具有无线通信功能的动态存储封装模块是目前迫切需要解决的问题。
实用新型内容
为了解决上述技术问题，本实用新型的目的是提供一种具有无线通信功能的动态存储BGA封装模块。
本实用新型所采用的技术方案是：一种具有无线通信功能的动态存储BGA封装模块，其包括金线以及一载体基板，所述载体基板的下表面设有焊球，所述载体基板的上表面分别设有绑线焊盘、第一粘贴层以及第二粘贴层，所述第一粘贴层的上表面设有DRAM芯片裸片，所述第二粘贴层的上表面设有无线通信器芯片裸片；
所述的绑线焊盘通过金线进而分别与DRAM芯片裸片以及无线通信器芯片裸片进行连接。
进一步，所述DRAM芯片裸片的上表面设有第三粘贴层，所述第三粘贴层的上表面设有DRAM处理器芯片裸片，而所述的DRAM处理器芯片裸片通过金线进而与绑线焊盘进行连接。
进一步，所述载体基板的上表面与第一粘贴层的下表面之间设有油墨层。
进一步，所述载体基板的上表面与第二粘贴层的下表面之间设有铜层。 
进一步，所述载体基板的上表面还设有用于打包封装的塑封层。
进一步，所述载体基板的厚度为0.2mm至0.4mm。
进一步，所述DRAM芯片裸片的厚度为0.15mm。
进一步，所述无线通信器芯片裸片的厚度为0.2mm。
进一步，所述的第一粘贴层为胶膜层，而所述胶膜层的厚度为25μm。
进一步，所述的第二粘贴层为银胶层。
本实用新型的有益效果是：由于本实用新型设有无线通信器芯片裸片，因此，本实用新型的动态存储封装模块除了具有动态存储功能以外，还具有无线通信功能，由此可得，本实用新型的动态存储封装模块具有多功能的优点，这样不仅能够便于人们的使用，而且能够减少应用模块的数量，缩小占据PCB的空间。另外，由于本实用新型设有无线通信器芯片裸片，因此，能够便于本实用新型的存储封装模块与控制模块进行无线远距离数据读取，以及能够便于多个控制模块交替对其进行数据读取。
附图说明
下面结合附图对本实用新型的具体实施方式作进一步说明：
图1是本实用新型一种具有无线通信功能的动态存储BGA封装模块的结构示意图。
1、载体基板；2、DRAM芯片裸片；3、DRAM处理器芯片裸片；4、金线；5、无线通信器芯片裸片；6、焊球；7、塑封层。
具体实施方式
由图1所示，一种具有无线通信功能的动态存储BGA封装模块，其包括金线4以及一载体基板1，所述载体基板1的下表面设有焊球6，所述载体基板1的上表面分别设有绑线焊盘、第一粘贴层以及第二粘贴层，所述第一粘贴层的上表面设有DRAM芯片裸片2，所述第二粘贴层的上表面设有无线通信器芯片裸片5；
所述的绑线焊盘通过金线4进而分别与DRAM芯片裸片2以及无线通信器芯片裸片5进行连接。所述的焊球6是作为模块的外部引脚。
由上述可得，由于本实用新型设有无线通信器芯片裸片5，因此，本实用新型的动态存储封装模块还具有无线通信功能，即本实用新型的动态存储封装模块具有多功能的优点，便于人们的使用。而且由于本实用新型的动态存储封装模块具有动态存储功能以及无线通信功能，因此在实现与DRAM芯片进行无线通讯的电路设计时，则只需使用本实用新型即可，由此可知，通过使用本实用新型能够减少应用模块的数量，从而缩小PCB上的占据空间。另外，由于设有无线通信器芯片裸片5，因此，能够便于本实用新型的存储封装模块与控制模块进行无线远距离数据读取，以及能够便于多个控制模块交替对其进行数据读取。
还有，由于本实用新型的封装模块为BGA封装模块，因此能够优化与PCB之间的焊接，减小应力变化对模块的影响。
进一步作为优选的实施方式，所述DRAM芯片裸片2的上表面设有第三粘贴层，所述第三粘贴层的上表面设有DRAM处理器芯片裸片3，而所述的DRAM处理器芯片裸片3通过金线4进而与绑线焊盘进行连接。由于本实用新型的动态存储封装模块中还设有DRAM处理器芯片裸片3，因此，本实用新型的动态存储封装模块还能够通过所述的DRAM处理器芯片裸片3，从而实现现有控制模块所能实现的对DRAM芯片裸片2的管理功能，由此可得，这样能够进一步地增加本实用新型的功能，提高本实用新型的集成度，以及能够降低现有控制模块的复杂度和设计的难度。
另外，所述的DRAM处理器芯片裸片3设置在DRAM芯片裸片2的上表面，即形成芯片竖直堆叠结构，这样能够减少本实用新型的体积。
进一步作为优选的实施方式，所述载体基板1的上表面与第一粘贴层的下表面之间设有油墨层，即所述的DRAM芯片裸片2通过第一粘贴层从而固定在油墨层上。
进一步作为优选的实施方式，所述载体基板1的上表面与第二粘贴层的下表面之间设有铜层，即所述的无线通信器芯片裸片5通过第二粘贴层从而固定在铜层上。而由于所述的无线通信器芯片裸片5设置在铜层上，因此能够有助于芯片的散热，从而提高本实用新型使用的稳定性和安全性。 
进一步作为优选的实施方式，所述载体基板1的上表面还设有用于打包封装的塑封层7。所述的塑封层7，其主要材料为二氧化硅。
进一步作为优选的实施方式，所述载体基板1的厚度为0.2mm至0.4mm，并且其层数为4层至6层。而所述的载体基板1是由玻璃纤维、树脂以及填充剂混压而成的基板。
进一步作为优选的实施方式，所述DRAM芯片裸片2的厚度为0.15mm，所述DRAM处理器芯片裸片3的厚度也为0.15mm，这样能够降低叠层的厚度。
进一步作为优选的实施方式，所述无线通信器芯片裸片5的厚度为0.2mm，而所述的第二粘贴层为银胶层。由于所述无线通信器芯片裸片5的厚度为0.2mm，因此能够防止银胶爬上无线通信器芯片裸片5的上表面，从而避免无线通信器芯片裸片5受银胶的污染。
进一步作为优选的实施方式，所述的第一粘贴层为胶膜层，而所述胶膜层的厚度为25μm。同时，所述的第三粘贴层也为胶膜层，其厚度也为25μm。
进一步作为优选的实施方式，所述的金线4，其线径为20μm或25μm。
以上是对本实用新型的较佳实施进行了具体说明，但本实用新型创造并不限于所述实施例，熟悉本领域的技术人员在不违背本实用新型精神的前提下还可做作出种种的等同变形或替换，这些等同的变形或替换均包含在本申请权利要求所限定的范围内。

Claims (10)

1.一种具有无线通信功能的动态存储BGA封装模块，其特征在于：其包括金线以及一载体基板，所述载体基板的下表面设有焊球，所述载体基板的上表面分别设有绑线焊盘、第一粘贴层以及第二粘贴层，所述第一粘贴层的上表面设有DRAM芯片裸片，所述第二粘贴层的上表面设有无线通信器芯片裸片；
所述的绑线焊盘通过金线进而分别与DRAM芯片裸片以及无线通信器芯片裸片进行连接。
2.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述DRAM芯片裸片的上表面设有第三粘贴层，所述第三粘贴层的上表面设有DRAM处理器芯片裸片，而所述的DRAM处理器芯片裸片通过金线进而与绑线焊盘进行连接。
3.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述载体基板的上表面与第一粘贴层的下表面之间设有油墨层。
4.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述载体基板的上表面与第二粘贴层的下表面之间设有铜层。
5.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述载体基板的上表面还设有用于打包封装的塑封层。
6.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述载体基板的厚度为0.2mm至0.4mm。
7.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述DRAM芯片裸片的厚度为0.15mm。
8.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述无线通信器芯片裸片的厚度为0.2mm。
9.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述的第一粘贴层为胶膜层，而所述胶膜层的厚度为25μm。
10.根据权利要求1所述一种具有无线通信功能的动态存储BGA封装模块，其特征在于：所述的第二粘贴层为银胶层。
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Publication number Priority date Publication date Assignee Title
CN106023567A (zh) * 2016-07-29 2016-10-12 广东美的制冷设备有限公司 智能处理模块和家用电器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106023567A (zh) * 2016-07-29 2016-10-12 广东美的制冷设备有限公司 智能处理模块和家用电器

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