CN203760458U - 一种整流扁桥模块 - Google Patents

一种整流扁桥模块 Download PDF

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CN203760458U
CN203760458U CN201420091672.3U CN201420091672U CN203760458U CN 203760458 U CN203760458 U CN 203760458U CN 201420091672 U CN201420091672 U CN 201420091672U CN 203760458 U CN203760458 U CN 203760458U
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metal connecting
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metal
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陈建伟
吴丽珍
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ZHEJIANG CHUANGSHIDA MICROELECTRONICS Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本实用新型公开了整流扁桥模块，包括金属引线框架、金属连接片及单向导电芯片，金属引线框架具有四条引线脚、两引线架及两凸台，第一、二、三、四引线脚依次排列，第一、四引线脚分别与两引线架连成一体，第二、三引线脚分别与两凸台连成一体；金属连接片呈片状，每一连接片第一端各通过一单向导电芯片分别与两引线架焊接，每一连接片第二端分别与两凸台相贴并焊接；引线架、凸台、单向导电芯片及连接片封装在绝缘壳体内。本实用新型结构简单合理，用自动点胶沾晶机生产优化产品制造工艺，操作方便高效，提高了生产效率；芯片装配定位精准、焊料均匀，焊接结合面的空洞小，增加芯片焊接的结合力，有利于降低热阻，提升品质，延长产品使用寿命。

Description

一种整流扁桥模块
技术领域
本实用新型涉及一种整流扁桥模块。
背景技术
现有的整流桥模块采用传统的手工操作方式制作而成，由整体式金属框架、单向导电芯片和金属连接片等组成，其中，整体框架的底部为水平，而连接片上有三个连接端，上部分别和一正一反的两个芯片相连，与芯片接触设计有一个小凸点，尾部与整体框架接触设计有折弯平点，折弯的高度为两个凸点的高度加上芯片的厚度，使连接片能够水平的放置在框架上方，从而构成一个整流全桥电路。
原设计连接片与芯片接触的一端为半圆结构，而芯片普遍为方形结构，这使芯片在安装后始终有局部露出于连接片半圆之外。在封装生产过程中，由于环氧树脂受高压注射到塑封模的型腔中成型，外露的芯片极易受挤压发生损伤，同时由于塑封时温度高达150～160℃，塑封体内的框架、焊料、芯片、环氧树脂等材料的材质不同，因高温或冷却时产生的膨胀（或收缩）也不同，就会产生封装应力，极易造成外露的芯片受损。这种芯片受损是很微妙的，一般不易察觉，但会造成封装器件的性能下降或致产品失效。若将圆弧尺寸放大至完全保护芯片，则金属框架的间距必须相应设计的更宽一些，产品外形也要相应设计得更大一些，但这些都不符合市场对整流桥模块成本低、小体积、扁平化、易于散热好的安装要求。
发明内容
为解决上述现有技术在生产单相整流扁桥时，人工在引线框架上装配焊料、芯片、连接片定位不准，焊料不均匀，焊接面容易产生空洞，连接片安装效率低等问题，本实用新型提供了一种改进的整流扁桥模块。
本实用新型采取以下技术方案：一种整流扁桥模块，包括金属引线框架、两金属连接片及四单向导电芯片，金属引线框架具有四条引线脚、两引线架及两凸台，第一引线脚、第二引线脚、第三引线脚、第四引线脚依次排列，其中，第一引线脚、第四引线脚分别与两引线架连成一体，第二引线脚、第三引线脚分别与两凸台连成一体；金属连接片呈片状，每一金属连接片的第一端各通过一单向导电芯片分别与两引线架焊接，每一金属连接片的第二端分别与两凸台相贴并焊接；引线架、凸台、单向导电芯片及金属连接片封装在绝缘壳体内。
优选的，引线架形成两凸点，两引线架共有四凸点，四凸点沿横向依次排列；与此相对应的，每一金属连接片的第一端具有两凸点，金属连接片的两凸点分别对应于两引线架上的一凸点；所述的单向导电芯片处于金属连接片与引线架相对应的凸点间。
优选的，绝缘壳体为塑封体。
优选的，金属连接片的第一端呈方形，宽度大于第二端，第一端的边角采用圆弧作为倒角。
优选的，单向导电芯片与金属连接片、引线架间分别通过焊料而焊接。
优选的，金属连接片的第二端与凸台通过焊料而焊接。
优选的，凸点呈圆形。
本实用新型对整流扁桥模块的金属引线框架及金属连接片的结构进行改进，用自动点胶（锡膏）沾晶（芯片）机来替代现有人工操作，焊料均匀、芯片装配定位好，实现框架、焊料、芯片、连接片高精度的定位装配，其结构简单，操作方便，特别是将连接片尾部折弯成平直型的结构后更利于操作，内部芯片定位好，焊接面空洞减少，有效提升内部焊接的可靠性，大大提高了生产效率。
本实用新型还解决了现有技术存在框架中芯片外露的问题，连接片将更多的芯片面积覆盖于下方，在封装时避免了塑封胶体对外露芯片的正面挤压和塑封体在温度变化时产生应力对芯片的损伤，有效降低了挤压和应力对芯片的破坏程度。
附图说明
图1是本实用新型外形结构的正视图。
图2是本实用新型外形结构的侧视图。
图3是本实用新型内部结构的正视图。
图4是本实用新型内部结构的侧视图。
图5是金属连接片的正视图。
图6是金属连接片的侧视图。
图7是整体式金属引线框架的正视图。
图8是整体式金属引线框架的侧视图。
图9是单相全波整流桥的原理图。
图中：1-整体式金属引线框架、1-1-引线脚、1-2-引线架、1-2-1-凸点、1-2-2-凸点、1-2-3-凸点、1-2-4-凸点、1-3-引线架上的凸台、2-金属连接片、2-1-1-凸点、4-单向导电芯片、5-焊料、6-塑封体（环氧树脂）。
具体实施方式
下面结合附图对本实用新型优选实施例作详细说明。
参见图1-9，本实施例整流扁桥模块包括整体式金属引线框架1、金属连接片2及单向导电芯片4，整体式金属引线框架1具有四条引线脚1-1、两条内部引线架1-2及两凸台1-3，四条引线脚1-1中，外侧的两条分别与两条内部引线架1-2连成一体，中部的两条分别与两凸台1-3连成一体状，两条引线架1-2远离引线脚1-1的一侧部分别形成两个圆形凸点1-2-1、1-2-2、1-2-3、1-2-4，四个凸点1-2-1、1-2-3、1-2-2、1-2-4沿横向依次排列，凸点高度配合连接片的支撑焊接。
金属连接片2呈片状，其第一端2-1呈方形，宽度大于第二端2-2，边角用适当圆弧，该端2-1具有两个圆形凸点2-1-1，两金属连接片的两个凸点分别与凸点1-2-1、1-2-3及凸点1-2-2、1-2-4一一相对应，金属连接片与引线架相对应的凸点间各置入一单向导电芯片4，单向导电芯片4的正、反面都均匀涂有高温焊料5（锡膏），通过焊料5将单向导电芯片4与两侧外的相对应凸点可靠焊接。金属连接片的第一端宽度尺寸加大，这样连接片与引线架之间的可靠性、散热性更好，可有效减少挤压及应力对芯片的损伤。
四个单向导电芯片分别为电极一正一反定位于引线架上的凸点，在整体金属引线框架凸点1-2-1及1-2-2上二个单向导电芯片的电极正极朝上，引线框架凸点1-2-3及1-2-4上二个单向导电芯片电极正极朝下，再通过金属连接片在芯片和金属引线框架间形成全桥整流电路。
金属引线框架的凸台1-3的高度为框架凸点的高度加上芯片的厚度及连接片凸点的高度，从而使连接片的第二端能够持平安装。两金属连接片2的第二端2-2分别与一凸台1-3相贴并通过焊料5连接。金属连接片2的第二端为平直延伸，长度在安装后可稍伸出，最好不超出框架凸台底部的1/5宽度，以便不影响引线脚与外界的连接。
将整流扁桥的芯片焊接部位采用环氧塑封料绝缘包封，引线架1-2、单向导电芯片4和金属连接片2封装在绝缘的塑封体6内，引线脚1-1在塑封体6的下方，裸露在外，应用于各电路的连接。
以上对本实用新型的优选实施例进行了详细说明，对本领域的普通技术人员而言，依据本实用新型提供的思想，在本实用新型的具体实施方式和应用范围上均会有改变之处，而这些改变也应视为本实用新型的保护范围。

Claims (7)

1.一种整流扁桥模块，包括金属引线框架、两金属连接片及四单向导电芯片，金属引线框架具有四条引线脚、两引线架及两凸台，第一引线脚、第二引线脚、第三引线脚、第四引线脚依次排列，其中，第一引线脚、第四引线脚分别与两引线架连成一体，第二引线脚、第三引线脚分别与两凸台连成一体；其特征在于：金属连接片呈片状，每一金属连接片的第一端各通过一单向导电芯片分别与两引线架焊接，每一金属连接片的第二端分别与两凸台相贴并焊接；引线架、凸台、单向导电芯片及金属连接片封装在绝缘壳体内。
2.如权利要求1所述的整流扁桥模块，其特征在于：引线架形成两凸点，两引线架共有四凸点，四凸点沿横向依次排列；与此相对应的，每一金属连接片的第一端具有两凸点，金属连接片的两凸点分别对应于两引线架上的一凸点；所述的单向导电芯片处于金属连接片与引线架相对应的凸点间。
3.如权利要求1所述的整流扁桥模块，其特征在于：所述的绝缘壳体为塑封体。
4.如权利要求1或2所述的整流扁桥模块，其特征在于：金属连接片的第一端呈方形，宽度大于第二端，第一端的边角采用圆弧作为倒角。
5.如权利要求1或2所述的整流扁桥模块，其特征在于：单向导电芯片与金属连接片、引线架间分别通过焊料而焊接。
6.如权利要求1或2所述的整流扁桥模块，其特征在于：金属连接片的第二端与凸台通过焊料而焊接。
7.如权利要求2所述的整流扁桥模块，其特征在于：所述的凸点呈圆形。
CN201420091672.3U 2014-02-28 2014-02-28 一种整流扁桥模块 Expired - Fee Related CN203760458U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473386A (zh) * 2018-12-28 2019-03-15 乐山希尔电子股份有限公司 一种半导体器件组装方法及其生产线

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473386A (zh) * 2018-12-28 2019-03-15 乐山希尔电子股份有限公司 一种半导体器件组装方法及其生产线
CN109473386B (zh) * 2018-12-28 2023-10-24 乐山希尔电子股份有限公司 一种半导体器件组装方法及其生产线

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