WO2018090470A1 - 智能功率模块及其制造方法 - Google Patents

智能功率模块及其制造方法 Download PDF

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Publication number
WO2018090470A1
WO2018090470A1 PCT/CN2016/113946 CN2016113946W WO2018090470A1 WO 2018090470 A1 WO2018090470 A1 WO 2018090470A1 CN 2016113946 W CN2016113946 W CN 2016113946W WO 2018090470 A1 WO2018090470 A1 WO 2018090470A1
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Prior art keywords
circuit wiring
power module
circuit
component
module according
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PCT/CN2016/113946
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English (en)
French (fr)
Inventor
冯宇翔
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广东美的制冷设备有限公司
美的集团股份有限公司
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Publication of WO2018090470A1 publication Critical patent/WO2018090470A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Definitions

  • the present invention relates to the field of electronic device technologies, and in particular, to an intelligent power module and a method of fabricating the same.
  • the Intelligent Power Module is a power-driven product that combines power electronics and integrated circuit technology.
  • the intelligent power module integrates the power switching device and the high voltage driving circuit, and has a fault detecting circuit such as overvoltage, overcurrent and overheating.
  • the intelligent power module receives the control signal of the MCU (Micro Controller Unit), drives the subsequent circuit to work, and sends the status detection signal of the system back to the MCU.
  • the intelligent power module wins more and more market with its high integration and high reliability. It is especially suitable for inverters and various inverter power supplies for driving motors. It is frequency conversion speed regulation and metallurgy. An ideal power electronic device for mechanical, electric traction, servo drive, and variable frequency home appliances.
  • the smart power module is provided with a pin for electrically connecting with an external circuit.
  • the intelligent power module is generally used in a harsh working condition, such as an outdoor unit of an inverter air conditioner, and the intelligent power module is usually at a high temperature and high humidity. Working under the condition, the exposed pins are prone to condensation in a humid environment, causing short circuits between the pins. In severe cases, the intelligent power module may explode, causing damage to its application environment and causing significant economic losses.
  • the smart power module is large in size, large in space and high in cost.
  • the present invention aims to solve at least one of the technical problems existing in the prior art. To this end, it is an object of the present invention to provide an intelligent power module that is highly reliable, small in size, and low in cost.
  • Another object of the present invention is to provide a method of manufacturing an intelligent power module.
  • An intelligent power module comprising: circuit wiring, at least one end of the circuit wiring is provided with a pad for electrically connecting to an external circuit; a plurality of circuit elements, a plurality of the circuit elements being disposed in the circuit Wiring On the upper surface, a part of the plurality of circuit elements is a power element, and another part is a driving element corresponding to the power element, at least one of the driving elements is disposed on the power element corresponding thereto, The power element and the driving element are respectively electrically connected to the circuit wiring; a sealing resin, and the sealing resin is provided on the circuit wiring.
  • the smart power module of the present invention by arranging the driving component on the power component, the occupied area of the power component and the driving component is effectively saved, the area of the smart power module is reduced, and the volume of the smart power module is reduced. Reduce the cost of intelligent power modules.
  • the outwardly extending pin on the smart power module in the related art is omitted, and the condensation on the pin is avoided.
  • the short circuit caused by the exposure improves the reliability of the intelligent power module, prolongs the service life of the intelligent power module, and reduces the use cost.
  • the intelligent power module according to the invention can also have the following additional technical features:
  • each of said circuit elements is a planar circuit element, each of said circuit elements having electrodes, each of said circuit elements being electrically connected directly to said circuit wiring by electrodes.
  • the driving component is soldered on the circuit wiring by a first ball
  • the power component is soldered to the circuit wiring by the second ball
  • the height of the first ball is A
  • the height of the second ball is B
  • the A and B satisfy: 400 ⁇ m ⁇ BA ⁇ 500 ⁇ m.
  • the driving element has a temperature sensing device for detecting a temperature of the corresponding power element.
  • the smart power module further includes: a heat sink connected to the upper surface of the power component.
  • the sealing resin covers an upper portion of a side surface of the circuit wiring and an upper surface of the circuit wiring, and a lower portion of the side surface of the circuit wiring and a lower surface of the circuit wiring are exposed at The sealing resin is outside.
  • the sealing resin completely covers the circuit component on the upper surface of the circuit wiring, and a side surface of the heat sink away from the power component is exposed outside the sealing resin.
  • the side of the circuit wiring is exposed to a height h outside the sealing resin, and the h satisfies: 0.3 oz ⁇ h ⁇ 0.8 oz.
  • the heat sink is a copper sheet, the heat sink has a thickness of t1, and the t1 satisfies: 1.0 mm ⁇ t1 ⁇ 1.5 mm.
  • the outer surface of the heat sink has an electroplated silver layer.
  • the thickness of the electroplated silver layer is t2, and the t2 satisfies: 22 ⁇ m ⁇ t2 ⁇ 30 ⁇ m.
  • the circuit wiring is machined from a copper plate having a thickness t3, the t3 satisfying: t3 ⁇ 5 ounces.
  • a method of manufacturing an intelligent power module according to the present invention includes the following steps:
  • S2 fabricating a base, and digging a groove on the base according to the shape of the circuit wiring, and placing a lower portion of the circuit wiring in the groove;
  • S5 The circuit wiring is taken out from the base to obtain an intelligent power module.
  • the manufacturing method of the intelligent power module of the present invention by placing the circuit wiring in the recess on the reusable base and positioning the circuit wiring through the base, the manufacturing difficulty of the intelligent power module is greatly reduced, and the manufacturing is improved.
  • the yield reduces the cost of the intelligent power module and is beneficial to the popularization and application of the intelligent power module.
  • the driving component is disposed on the corresponding power component, which effectively reduces the area and volume of the smart power module, thereby reducing the cost of the smart power module and facilitating miniaturization of the terminal product using the smart power module.
  • the method before the electrodes of the circuit component are connected to the circuit wiring, the method further includes the step of attaching a heat sink to the power component.
  • step S1 specifically includes the following steps:
  • step S3 specifically includes the following steps:
  • solder paste is applied to the position of the circuit wiring where the driving component is to be mounted, and a first ball is implanted, and the circuit wiring is to be mounted.
  • the position of the power component is coated with solder paste and implanted with a second ball;
  • the method further includes the following steps:
  • the depth of the groove is H, and the H satisfies: 0.3 oz ⁇ H ⁇ 0.8 oz.
  • the base is a stainless steel piece.
  • FIG. 1 is a top plan view of an intelligent power module in accordance with an embodiment of the present invention.
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1;
  • FIG. 3 is a top plan view of an intelligent power module in which a sealing resin of an upper surface of an intelligent power module is removed, in accordance with an embodiment of the present invention
  • FIG. 4 is a bottom view of an intelligent power module in accordance with an embodiment of the present invention.
  • FIG. 5 is a top plan view of circuit wiring of an intelligent power module in accordance with an embodiment of the present invention.
  • Figure 6 is a cross-sectional view taken along line B-B of Figure 5;
  • FIG. 7 is a schematic structural diagram of a heat sink, a power element, and a driving element of an intelligent power module according to an embodiment of the present invention
  • FIG. 8 is a top plan view of a base in a method of manufacturing an intelligent power module according to an embodiment of the present invention.
  • FIG. 9 is a top plan view of a mating of a base and a carrier in accordance with an embodiment of the present invention.
  • Figure 10 is a cross-sectional view taken along line C-C of Figure 9;
  • FIG. 11 is a schematic view of a package sealing resin of an intelligent power module according to an embodiment of the present invention.
  • FIG. 12 is a bottom view of the smart power module after encapsulating the sealing resin according to an embodiment of the present invention.
  • FIG. 13 is a top plan view of a smart power module packaged with a sealing resin in accordance with an embodiment of the present invention
  • FIG. 14 is a flow chart of a method of fabricating an intelligent power module in accordance with an embodiment of the present invention.
  • Circuit component 2 power component 21, drive component 22, sealing resin 3, heat sink 4,
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly. In the description of the present invention, "a plurality” means two or more unless otherwise stated.
  • connection In the description of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.
  • the first feature "on” or “under” the second feature may include direct contact of the first and second features, and may also include first and second features, unless otherwise specifically defined and defined. It is not in direct contact but through additional features between them.
  • the first feature “above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature includes the first feature directly above and above the second feature, or merely the first feature level being less than the second feature.
  • An intelligent power module 100 in accordance with an embodiment of the present invention is described below with reference to FIGS.
  • the intelligent power module 100 includes: a circuit wiring 1, a plurality of circuit elements 2, and a sealing resin 3. Wherein at least one end of the circuit wiring 1 is provided with a pad 11 for electrical connection with an external circuit; a plurality of circuit elements 2 are provided on the upper surface of the circuit wiring 1, and a part of the plurality of circuit elements 2 is a power element 21 The other part is a driving element 22 corresponding to the power element 21, at least one driving element 22 is disposed on the corresponding power element 21, and the power element 21 and the driving element 22 are electrically connected to the circuit wiring 1, respectively, and the sealing resin 3 is disposed in the circuit. On wiring 1.
  • the smart power module 100 of the embodiment of the present invention by arranging the driving component 22 on the power component 21, the occupied area of the power component 21 and the driving component 22 is effectively saved, and the area of the smart power module 100 is reduced, thereby reducing The size of the smart power module 100 is reduced, reducing the cost of the smart power module 100. Further, by providing the pad 11 at at least one end of the circuit wiring 1 and electrically connecting to the external circuit through the pad 11, the outwardly extending pins of the smart power module 100 in the related art are omitted, thereby avoiding the introduction. The short circuit caused by the condensation on the foot improves the reliability of the intelligent power module 100, prolongs the service life of the intelligent power module 100, and reduces the use cost.
  • the smart power module 100 includes: a circuit wiring 1, a plurality of circuit elements 2, and a sealing resin 3.
  • At least one end portion of the circuit wiring 1 (for example, the front end in FIG. 3) is provided with a pad 11 for electrical connection with an external circuit.
  • a pad 11 for electrical connection with an external circuit.
  • the pads 11 are electrically connected to the external circuit, thereby eliminating the outwardly extending pins on the smart power module 100 in the related art, thereby avoiding short circuits caused by condensation on the pins, and improving the smart power module 100.
  • the reliability of the smart power module 100 extends the service life and reduces the cost of use.
  • the pad 11 may be formed in a square structure, and the longitudinal sectional area of the pad 11 is preferably larger than the longitudinal sectional area of the end portion of the circuit wiring 1. Thereby, the contact area of the pad 11 with the external circuit can be increased, and the reliability of the connection of the smart power module 100 to the external circuit is improved.
  • a plurality of circuit elements 2 are provided on the upper surface of the circuit wiring 1, and a part of the plurality of circuit elements 2 is the power element 21, and the other part is the driving element 22 corresponding to the power element 21.
  • the power component 21 may be a component having a large amount of heat such as an IGBT transistor or a MOS transistor
  • the driving component 22 may be a driving circuit of the power component 21 (for example, an IGBT transistor, a MOS transistor, or the like) corresponding thereto, and the driving component 22 is generally a high voltage. integrated circuit.
  • each circuit element 2 is a planar type circuit element 2, for example, when the circuit element 2 is an IGBT, an L-type IGBT may be selected.
  • Each circuit element 2 has electrodes, and each circuit element 2 is directly connected to the electricity through the electrodes The wiring 1 is electrically connected.
  • the planar type circuit element 2 refers to the circuit element 2 in which all the electrodes are located on the same side surface (for example, the lower surface in FIG. 2) of the circuit element 2.
  • the side surface on which the electrode of the circuit component 2 is located is connected to the upper surface of the circuit wiring 1, so that the electrode of the circuit component 2 can be directly connected to the circuit wiring 1, and the electrical connection between the circuit component 2 and the circuit wiring 1 can be realized.
  • the process of realizing the metal wire and the bonding metal wire for electrically connecting the circuit component 2 and the circuit wiring 1 in the related art is omitted, the processing technology of the intelligent power module 100 is simplified, the production efficiency and the production yield are improved, and the saving is achieved.
  • the material cost, equipment cost, and processing cost of the smart power module 100 reduce the overall cost of the smart power module 100.
  • the surface on which the electrodes of the planar type circuit component 2 are located may be referred to as "front side” (for example, the lower surface in FIG. 2), and accordingly, the side surface of the planar type circuit component 2 opposite to the electrode It is called “reverse surface” (for example, the upper surface in Figure 2).
  • front side for example, the lower surface in FIG. 2
  • reverse surface for example, the upper surface in Figure 2.
  • At least one driving element 22 is provided on the corresponding power element 21, and the power element 21 and the driving element 22 are electrically connected to the circuit wiring 1, respectively.
  • the driving element 22 may be disposed on the lower surface of the power element 21, and the driving element 22 may be directly electrically connected to the circuit wiring 1 through the electrode, and the power element 21 may also be electrically connected directly to the circuit wiring 1 through the electrode.
  • a non-conductive gel may be applied on the lower surface of the power element 21 by dispensing or dispensing. The coated area of the non-conductive gel is slightly larger than the area of the driving element 22, and then driven by the DA machine.
  • the element 22 is placed on the surface of the non-conductive gel, and the upper surface of the driving element 22 is prevented from coming into contact with the electrode of the power element 21, and then the non-conductive gel is baked, and the baking temperature can be adjusted according to the specific material of the non-conductive gel. Generally, the baking temperature should be set at about 125 ° C, and the baking time is 1 to 2 hours to completely solidify the non-conductive gel.
  • the die bond flatness of the drive element 22 can be less than 0.1 mm.
  • the driving element 22 is positioned on the power element 21 corresponding thereto, the occupied area of the driving element 22 and the power element 21 is effectively reduced, thereby effectively reducing the area and volume of the smart power module 100, and reducing The cost of the smart power module 100.
  • the area and volume of the terminal product using the power module can be reduced, which is advantageous for miniaturization of the terminal product.
  • the driving element 22 may be soldered to the circuit wiring 1 by the first ball 91, and the power element 21 may be soldered to the circuit wiring 1 by the second ball 92, wherein the height of the first ball 91
  • the height of the second ball 92 is B
  • a and B satisfy: 400 ⁇ m ⁇ BA ⁇ 500 ⁇ m.
  • the power element 21 and the driving element 22 can be easily electrically connected to the circuit wiring 1.
  • the specific heights of the first ball 91 and the second ball 92 can be adjusted according to the specific specifications of the power component 21 and the driving component 22, as long as The power element 21 and the driving element 22 are electrically connected to the circuit wiring 1, which is not specifically limited in the present invention.
  • first ball 91 and the second ball 92 may each be a solder ball, but are not limited thereto.
  • the drive element 22 has a temperature sensing device for detecting the temperature of the power element 21 corresponding to the drive element 22.
  • the temperature sensing device can be integrated on the driving component 22, and has a simple structure and convenient processing. Therefore, the temperature of the surface of the power component 21 can be monitored in real time by the temperature sensing device, so that when the abnormal power generation phenomenon occurs in the smart power module 100, measures can be taken to respond in time, thereby effectively preventing the intelligent power module 100 from being burnt due to overheating, thereby reducing the The probability of damage of the smart power module 100 improves the reliability of the smart power module 100.
  • the smart power module 100 further includes a heat sink 4 that is coupled to the upper surface of the power component 21.
  • the heat generation of the power component 21 is large, and the heat sink 4 is connected to the upper surface of the power component 21 to effectively improve the heat dissipation performance of the smart power module 100, thereby improving the reliability of the smart power module 100.
  • the heat sink 4 is a copper piece, which has good heat dissipation effect and low material cost.
  • the thickness of the fin 4 is t1, and t1 satisfies: 1.0 mm ⁇ t1 ⁇ 1.5 mm.
  • the specific value can be adjusted according to the specific specification and type of the power component 21 to ensure the heat dissipation effect of the heat sink 4.
  • the outer surface of the heat sink 4 has an electroplated silver layer.
  • the outer surface of the heat sink 4 may be subjected to an electroplating silver treatment to form an electroplated silver layer on the outer surface of the heat sink 4.
  • the wettability of the heat sink 4 can be improved, and the heat radiation effect of the heat sink 4 can be further improved.
  • the thickness of the electroplated silver layer is t2, and t2 satisfies: 22 ⁇ m ⁇ t2 ⁇ 30 ⁇ m.
  • the specific value can be adjusted according to the specific specification and model of the intelligent power module 100.
  • the sealing resin 3 is provided on the circuit wiring 1, and the sealing resin 3 is used to encapsulate the circuit wiring 1 to protect the circuit wiring 1 and the circuit component 2 on the circuit wiring 1, thereby improving the reliability of the smart power module 100.
  • the sealing resin 3 may be molded by a transfer mold using a thermosetting resin, or may be molded using a thermoplastic resin using an injection mold.
  • the sealing resin 3 covers the upper portion of the side surface of the circuit wiring 1 and the upper surface of the circuit wiring 1, and the lower portion of the side surface of the circuit wiring 1 and the lower surface of the circuit wiring 1 are exposed outside the sealing resin 3. Its Referring to Fig. 1 in conjunction with Figs. 2 and 4, the sealing resin 3 completely covers the circuit component 2 on the upper surface of the circuit wiring 1, and the surface of the heat sink 4 away from the power component 21 is exposed outside the sealing resin 3. Further, the sealing resin 3 covers most of the height of the side surface of the circuit wiring 1, and the small portion of the lower portion of the side surface of the circuit wiring 1 and the lower surface of the circuit wiring 1 are exposed outside the sealing resin 3.
  • the heat dissipation performance of the smart power module 100 can be effectively improved, the heat accumulation inside the smart power module 100 can be avoided, and the gap between the circuit wires 1 can be completely exposed, thereby making it difficult for moisture to adhere to the circuit wiring 1
  • the ions inside the intelligent power module 100 in a high-temperature and high-humidity environment are effectively avoided, for example, chloride ions, bromide ions, etc., which are caused by the migration of water vapor to cause corrosion to the circuit, and the circuit and circuit components of the circuit wiring 1 are avoided.
  • the short circuit of the circuit further improves the reliability of the smart power module 100, prolongs the service life of the smart power module 100, and reduces the use cost of the smart power module 100.
  • the side of the circuit wiring 1 exposed to the outside of the sealing resin 3 has a height h, h satisfies: 0.3 oz ⁇ h ⁇ 0.8 oz.
  • the smart power module 100 facilitates soldering of the solder paste during the subsequent soldering fixing process, so that the circuit wiring 1 exposed outside the sealing resin 3 can be completely wrapped by solder such as solder paste, thereby facilitating assembly of the smart power module 100, The assembly efficiency and assembly reliability of the smart power module 100 are improved.
  • the circuit wiring 1 is formed by using a copper plate having a thickness t3 and t3 satisfying: t3 ⁇ 5 ounces.
  • a copper plate having a cross-sectional area of less than 64 mm ⁇ 30 mm and a thickness of not less than 5 ounces may be selected, and the shape of the circuit wiring 1 is punched out on the copper plate by a stamping die to form the circuit wiring 1; or the high-speed steel may be used as a material by the file.
  • the rotation speed of the control motor is 5000 rpm, so that the boring tool and the plane are formed at right angles to form the shape of the circuit wiring 1.
  • the shape of the circuit wiring 1 can also be etched on the copper plate by a chemical reaction by an etching tool.
  • an oxidation resistant layer is provided on the outer surface of the circuit wiring 1.
  • the oxidation resistant layer may be a gold layer.
  • a gold layer may be formed on the outer surface of the circuit wiring 1 by means of electroplating gold or chemical immersion gold to improve the oxidation resistance of the circuit wiring 1, so that the smart power module 100 can be applied to a place where the oxidation resistance is high. Thereby, the performance of the smart power module 100 is increased to expand the use range of the smart power module 100.
  • the smart power module 100 according to the embodiment of the invention has good heat dissipation performance, small area, simple process, high reliability and low cost.
  • the manufacturing method of the smart power module 100 shown in FIG. 1 to FIG. 13 includes specific steps as shown in FIG. 14:
  • the lower portion of the side surface of the circuit wiring 1 extends into the recess 51, and the upper portion of the side surface of the circuit wiring 1 is exposed outside the recess 51.
  • the width of the groove 51 on the base 5 may be slightly larger than the width of the circuit wiring 1 corresponding thereto in order to place the lower portion of the circuit wiring 1 in the groove 51.
  • the circuit wiring 1 can be positioned by the base 5 to facilitate encapsulation of the sealing resin 3 on the circuit wiring 1, so that the lower and lower surfaces of the side surface of the circuit wiring 1 that protrude into the recess 51 are exposed outside the sealing resin 3.
  • the difficulty in positioning the sealing resin 3 on the circuit wiring 1 is reduced.
  • the base 5 needs to be taken out, and the base 5 can be reused, thereby eliminating the metal substrate in the smart power module 100 in the related art, thereby further reducing the intelligent power module.
  • the cost of 100 is the cost of 100.
  • the smart power module 100 completely sealed with respect to the conventional sealed resin 3 reduces the difficulty in controlling the parameters of the thickness of the sealing resin 3 on the upper surface and the lower surface of the circuit wiring 1 during the injection molding, thereby greatly reducing the intelligence.
  • the manufacturing of the power module 100 is difficult and the manufacturing yield is improved, thereby further reducing the cost of the smart power module 100.
  • the driving component 22 is disposed on the corresponding power component 21, which effectively reduces the area and volume of the smart power module 100, thereby reducing the cost of the smart power module 100 and facilitating the use of the terminal product of the smart power module 100. Miniaturization.
  • the manufacturing method of the smart power module 100 by placing the circuit wiring 1 in the recess 51 on the reusable base 5, the circuit wiring 1 is positioned through the base 5, which greatly reduces the smart power.
  • the manufacturing difficulty of the module 100 improves the manufacturing yield, reduces the cost of the smart power module 100, and facilitates the popularization and application of the smart power module 100.
  • the driving component 22 is disposed on the corresponding power component 21, which effectively reduces the area and volume of the smart power module 100, thereby reducing the smart power module 100. It is cost-effective and facilitates miniaturization of the terminal product using the smart power module 100.
  • the method before the electrodes of the circuit component 2 are connected to the circuit wiring 1, the method further includes the step of attaching the heat sink 4 to the power component 21.
  • the surface of the power element 21 opposite to the surface on which the electrode is located may be attached to the heat sink 4.
  • the electrode of the power element 21 is located on the lower surface of the power element 21, and the upper surface of the power element 21 can be mounted on the heat sink 4.
  • the heat sink 4 may be formed by stamping or etching a copper sheet having a thickness of about 1.5 mm.
  • the outer surface of the heat sink 4 may be plated by silver to form an electroplated silver layer, and then passed through a eutectic.
  • the power element 21 is mounted on the heat sink 4 with a high temperature solder paste having a melting point of 300 ° C or higher.
  • the eutectic flatness of the power device can be controlled within 0.1 mm.
  • step S1 specifically includes the following steps:
  • a copper plate having a cross-sectional area of less than 64 mm ⁇ 30 mm and a thickness of not less than 5 ounces may be selected, and the shape of the circuit wiring 1 is punched out on the copper plate by a stamping die to form the circuit wiring 1; or by etching a chemical reaction The shape of the circuit wiring 1 is etched on the copper plate.
  • the high speed steel can be used as a material by the boring tool, and the rotation speed of the motor is controlled to be 5000 rpm, so that the boring tool and the aluminum plane are formed at right angles to form the shape of the circuit wiring 1. Then, the outer surface of the circuit wiring 1 is subjected to an oxidation treatment.
  • a gold layer may be formed on the outer surface of the circuit wiring 1 by means of electroplating gold or chemical immersion gold to improve the oxidation resistance of the circuit wiring 1, so that the smart power module 100 can be applied to a place where the oxidation resistance is high. Thereby, the use range of the smart power module 100 is expanded.
  • step S12 can be omitted to simplify the processing process of the smart power module 100 and reduce the processing cost.
  • step S3 specifically includes the following steps:
  • solder paste is applied to the position of the circuit wiring 1 where the driving component 22 is to be mounted, and the first ball 91 is implanted on the power component 21 of the circuit wiring 1 to be mounted. Position the solder paste and implant the second ball 92;
  • a non-conductive gel may be applied on the lower surface of the power component 21 by dispensing or dispensing, a non-conductive gel.
  • the coated area is slightly larger than the area of the driving element 22, and then the driving element 22 is placed on the surface of the non-conductive gel by a DA machine, and the upper surface of the driving element 22 is prevented from coming into contact with the electrode of the power element 21, and then the non-conductive condensation is performed.
  • the glue is baked, and the baking temperature can be adjusted according to the specific material of the non-conductive gel. Generally, the baking temperature should be set at about 125 ° C, and the baking time is 1 to 2 hours, so that the non-conductive gel is completely solidified. .
  • the die bond flatness of the drive element 22 can be less than 0.1 mm.
  • the fabricated circuit wiring 1 is placed in the corresponding groove 51 of the base 5 (as shown in FIG. 8), and the position of the circuit component 1 to be mounted with the driving member 22 is spliced by a solder paste using a steel mesh. Solder paste is applied to the position of the power component 21 to be mounted, respectively.
  • the position of the circuit wiring 1 on which the driving element 22 is to be mounted is referred to as a "first position”
  • the position of the circuit wiring 1 on which the power element 21 is to be mounted is referred to as " Second position”.
  • the thickness of the steel mesh may be 0.13 mm to 0.20 mm.
  • the first ball 91 is implanted in the first position and the second ball 92 is implanted in the second position. That is, the driving element 22 and the power element 21 are connected to the circuit wiring 1 by attaching a solder paste to the ball.
  • the first ball 91 and the second ball 92 are both solder balls.
  • a stepped steel mesh may be used, and the same thickness of solder paste may be applied to the first position and the second position, and tin balls of different sizes may be implanted, or solder pastes of different thicknesses may be applied in the first position and the second position.
  • solder pastes of different thicknesses and solder balls of different sizes may be coated on the first position and the second position to connect the driving component 22 and the power component 21 to the first of the circuit wiring 1, respectively.
  • Position and second position may be coated on the first position and the second position to connect the driving component 22 and the power component 21 to the first of the circuit wiring 1, respectively.
  • solder paste of the same thickness may be applied at the first location and the second location, and then the first height of the implant A at the first location
  • the ball 91 is implanted with a second ball 92 of height B in the second position.
  • the height A of the first ball 91 and the height B of the second ball 92 satisfy: 400 ⁇ m ⁇ B-A ⁇ 500 ⁇ m.
  • the electrode of the driving element 22 is placed on the first ball 91 by means of an SMT machine or a DA machine, the electrode of the power element 21 is placed on the second ball 92, and the bottom of the base 5 is placed on the carrier. 6 above, so that at least one edge of the base 5 is fixed in contact with the carrier 6 (as shown in Figures 9 and 10), and then passed back.
  • the flow soldering cures the first ball 91 and the second ball 92 to fix the driving element 22 and the power element 21 on the circuit wiring 1.
  • the base 5 can be positioned by the carrier 6 to prevent the base 5 from moving, thereby facilitating the fixing of the circuit component 2 (i.e., the power component 21 and the driving component 22) to the circuit wiring 1 by reflow soldering.
  • the carrier 6 may be formed in a rectangular shape, and at least one edge of the carrier 6 is provided with a fixing strip 61 which can be pushed from the side edge of the carrier 6 without the fixing strip 61 to the carrier. 6 on. At least one edge of the base 5 is in contact with the carrier 6.
  • the carrier 6 can be made of a material such as synthetic stone, which has high structural strength and low cost.
  • the three edges of the carrier 6 are provided with fixing strips 61 that can be pushed from the edges of the carrier 6 without the fixing strips 61 to the carrier 6.
  • SMT Surface Mount Technology
  • DA Die Attach
  • Chip bonding Chinese can be translated as “chip bonding”
  • DA machine refers to chip bonding machine.
  • the reflow time during the reflow process generally does not exceed 10 minutes to prevent the non-conductive gel from melting due to excessive reflow time.
  • the reflow time during the reflow process due to the presence of the base 5, even if the non-conductive gel softens, the relative position of the driving element 22 and the power element 21 does not change, and after the reflow process is finished, the non-conductive gel re-hardens to fix the driving element 22 at On the power element 21, the drive element 22 and the power element 21 are not separated.
  • the circuit wiring 1 fixed to the chassis 5 can be placed in a cleaning machine for cleaning, and the flux such as rosin remaining during reflow and the aluminum wire remaining during the pressing can be washed. .
  • cleaning may be performed according to the arrangement density of the circuit component 2 at the arrangement density of the circuit wiring 1, by spraying or ultrasonic or by a combination of spraying and ultrasonic.
  • the base 5 can be held by the robot arm, and the base 5 can be placed in the cleaning tank for cleaning.
  • the method further includes the step of removing the overflow glue 7 formed during the process of sealing the circuit wiring 1.
  • the sealing resin 3 may be molded by a transfer mold using a thermosetting resin, or may be molded using a thermoplastic resin using an injection mold.
  • the circuit wiring 1 When encapsulating the sealing resin 3, the circuit wiring 1 can be first baked in an oxygen-free environment, the baking time should not be less than 2 hours, and the baking temperature can be selected to be about 125 °C.
  • the package mold includes an upper mold 81 and a lower mold 82, and a cavity is defined between the upper mold 81 and the lower mold 82.
  • the mold cavity has a gate 83 and an exhaust port 84.
  • the sealing resin 3 In the process of encapsulating the circuit wiring 1 using the sealing resin 3, the portion of the side of the circuit wiring 1 where the groove 51 is exposed, the upper surface of the circuit wiring 1, the circuit component 2 on the upper surface of the circuit wiring 1, and the metal wire are covered with the sealing resin 3. . Due to the action of the pressure, part of the resin enters the recess 51 of the base 5, and an overflow glue 7 is formed on the circuit wiring 1, as shown in FIG. Part of the sealing resin 3 also enters between the fins 4 and the upper mold 81 due to pressure, and adheres to the upper surface of the fins 4 to form an overflow gel 7, as shown in FIG.
  • the thickness of the overflow glue 7 is very thin, generally does not exceed 0.1 mm, and can be removed by using a wind knife or the like, or can be removed by chemical means. Thereby, it is possible to prevent the overflow rubber 7 from affecting the heat dissipation performance of the heat sink 4, and it is possible to prevent the overflow glue 7 from affecting the input and output connection of the circuit wiring 1, and improving the performance of the smart power module 100.
  • the smart power module 100 can be placed in the test equipment for routine electrical parameter testing. Specifically, the contact test can be performed by the thimble and the test point. If the contact test does not pass, the thimble needs to be trimmed until the contact test passes, and then the electrical characteristics test, including the insulation withstand voltage, static power consumption, delay time and other test items, the test is qualified.
  • the contact test can be performed by the thimble and the test point. If the contact test does not pass, the thimble needs to be trimmed until the contact test passes, and then the electrical characteristics test, including the insulation withstand voltage, static power consumption, delay time and other test items, the test is qualified.
  • the depth of the groove 51 is H, H satisfies: 0.3 oz ⁇ H ⁇ 0.8 oz.
  • the base 5 is a stainless steel piece.
  • the base 5 can be machined from a high temperature resistant steel having a smooth surface. Thereby, the structural strength and high temperature resistance of the base 5 can be improved, the service life of the base 5 can be prolonged, and the cost of the stainless steel is low, and the material cost can be reduced.
  • the circuit wiring 1 is positioned by using the reusable base 5, which reduces the difficulty of positioning when encapsulating the sealing resin 3, and greatly reduces the manufacturing difficulty of the smart power module 100.
  • the manufacturing yield is improved, the cost of the smart power module 100 is reduced, and the popularity and application of the smart power module 100 are facilitated.
  • the driving component 22 is connected to the power component 21, the driving component 22 is The electrodes and the electrodes of the power element 21 are directly connected to the circuit wiring 1, which reduces the area of the smart power module 100, omits the process of bonding the metal wires in the related art, further saves cost and improves production efficiency.

Abstract

一种智能功率模块（100）及其制造方法，智能功率模块（100）包括：电路布线（1）、多个电路元件（2）和密封树脂（3），电路布线（1）的至少一个端部设有用于与外部电路电连接的焊盘（11）；多个电路元件（2）设在电路布线（1）的上表面上，多个电路元件（2）中的一部分为功率元件（21）、另一部分为与功率元件（21）对应的驱动元件（22），至少一个驱动元件（22）设在与其对应的功率元件（21）上，功率元件（21）与驱动元件（22）分别与电路布线（1）电连接；密封树脂（3）设在电路布线（1）上。该智能功率模块（100），减小了面积和体积，降低了成本且提高了可靠性，延长了使用寿命，降低了使用成本。

Description

智能功率模块及其制造方法
本申请要求于2016年11月15日提交中国专利局、申请号为201611035256.1、发明名称为“一种智能功率模块及其制造方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及电子器件技术领域，尤其是涉及一种智能功率模块及其制造方法。
背景技术
智能功率模块，即IPM(Intelligent Power Module)是一种将电力电子和集成电路技术结合的功率驱动类产品。智能功率模块把功率开关器件和高压驱动电路集成在一起，并内设有过电压、过电流和过热等故障检测电路。智能功率模块一方面接收MCU(Micro Controller Unit微控制单元)的控制信号，驱动后续电路工作，另一方面将系统的状态检测信号送回MCU。与传统分立方案相比，智能功率模块以其高集成度、高可靠性等优势赢得越来越大的市场，尤其适合于驱动电机的变频器及各种逆变电源，是变频调速、冶金机械、电力牵引、伺服驱动、变频家电的一种理想电力电子器件。
相关技术中，智能功率模块上设有用于与外部电路电连接的引脚，然而智能功率模块一般会用在恶劣的工况中，如在变频空调的室外机上，智能功率模块通常在高温高湿的状态下工作，引脚外露在潮湿环境中容易产生凝露等现象，造成引脚间短路，严重时会使智能功率模块发生爆炸事故，对其应用环境构成损害，造成重大经济损失。此外，智能功率模块的体积较大，占用空间大且成本高。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。为此，本发明的一个目的在于提出一种智能功率模块，该智能功率模块的可靠性高、体积小且成本低。
本发明的另一个目的在于提出了一种智能功率模块的制造方法。
根据本发明的智能功率模块，包括：电路布线，所述电路布线的至少一个端部设有用于与外部电路电连接的焊盘；多个电路元件，多个所述电路元件设在所述电路布线 的上表面上，多个所述电路元件中的一部分为功率元件、另一部分为与所述功率元件对应的驱动元件，至少一个所述驱动元件设在与其对应的所述功率元件上，所述功率元件与所述驱动元件分别与所述电路布线电连接；密封树脂，所述密封树脂设在所述电路布线上。
根据本发明的智能功率模块，通过将驱动元件设置在功率元件上，有效地节省了功率元件和驱动元件的占用面积，减小了智能功率模块的面积，从而减小了智能功率模块的体积，降低了智能功率模块的成本。此外，通过在电路布线的至少一个端部设置焊盘，并通过焊盘与外部电路电连接，省去了相关技术中智能功率模块上向外延伸的引脚，避免了因引脚上产生凝露造成的短路，提高了智能功率模块的可靠性，延长了智能功率模块的使用寿命，降低了使用成本。
另外，根据本发明的智能功率模块还可以具有如下附加的技术特征：
根据本发明的一些实施例，每个所述电路元件为平面型电路元件，每个所述电路元件具有电极，每个所述电路元件通过电极直接与所述电路布线电连接。
具体地，所述驱动元件通过第一植球焊接在所述电路布线上，所述功率元件通过所述第二植球焊接在所述电路布线上，所述第一植球的高度为A，所述第二植球的高度为B,所述A、B满足：400μm≤B-A≤500μm。
可选地，所述驱动元件具有感温器件，所述感温器件用于检测对应的所述功率元件的温度。
根据本发明的一些实施例，智能功率模块进一步包括：散热片，所述散热片与所述功率元件的上表面相连。
根据本发明的一些实施例，所述密封树脂覆盖所述电路布线的侧面的上部和所述电路布线的上表面，所述电路布线的所述侧面的下部和所述电路布线的下表面裸露在所述密封树脂外。
具体地，所述密封树脂完全覆盖所述电路布线上表面上的所述电路元件，所述散热片的远离所述功率元件的一侧表面露在所述密封树脂外。
可选地，所述电路布线的所述侧面裸露在所述密封树脂外的高度为h，所述h满足：0.3盎司≤h≤0.8盎司。
可选地，所述散热片为铜片，所述散热片的厚度为t1，所述t1满足：1.0mm≤t1≤1.5mm。
进一步地，所述散热片的外表面具有电镀银层。
可选地，所述电镀银层的厚度为t2，所述t2满足：22μm≤t2≤30μm。
根据本发明的一些实施例，所述电路布线采用铜板加工而成，所述铜板的厚度为t3，所述t3满足：t3≥5盎司。
根据本发明的智能功率模块的制造方法，包括以下步骤：
S1：制作电路布线；
S2：制作底座，并根据所述电路布线的形状在所述底座上挖出凹槽，将所述电路布线的下部放置在所述凹槽内；
S3：将所述驱动元件连接在所述功率元件上，将所述驱动元件和所述功率元件的分别与所述电路布线电连接；
S4：采用密封树脂封装所述电路布线；
S5：将所述电路布线从所述底座中取出，得到智能功率模块。
根据本发明的智能功率模块的制造方法，通过将电路布线放置在可重复利用的底座上的凹槽内，通过底座对电路布线进行定位，极大地降低了智能功率模块的制造难度，提高了制造良率，降低了智能功率模块的成本，有利于智能功率模块的普及和应用。此外，将驱动元件设置在对应的功率元件上，有效地减小了智能功率模块的面积和体积，从而降低了智能功率模块的成本且有利于使用该智能功率模块的终端产品的小型化。
根据本发明的一些实施例，将所述电路元件的电极与所述电路布线相连之前，还包括如下步骤：将散热片贴在所述功率元件上。
具体地，所述步骤S1具体包括如下步骤：
S11：对铜板进行冲压或者蚀刻形成所述电路布线；
S12：对所述电路布线的上表面进行抗氧化处理。
具体地，所述步骤S3具体包括如下步骤：
S31：在所述功率元件的下表面上涂敷非导电凝胶，所述驱动元件通过所述非导电凝胶与所述功率元件相连；
S32：将所述电路布线放置在所述凹槽内后，在所述电路布线的待安装所述驱动元件的位置涂装锡膏并植上第一植球，在所述电路布线的待安装所述功率元件的位置涂装锡膏并植上第二植球；
S33：将所述驱动的电极放置在所述第一植球上，将所述功率元件的电极放置在所述第二植球上；
S34：通过回流焊分别将所述驱动元件和所述功率元件固定在所述电路布线上；
S35：清洗电路布线，以除去残留在电路布线上的异物。
进一步地，将所述电路布线从所述底座中取出后，还包括如下步骤：
将密封所述电路布线过程中形成的溢胶去除。
可选地，所述凹槽的深度为H，所述H满足：0.3盎司≤H≤0.8盎司。
可选地，所述底座为不锈钢件。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1是根据本发明实施例的智能功率模块的俯视图；
图2是沿图1中A-A线的剖示图；
图3是根据本发明实施例的智能功率模块的俯视图，其中，去掉了智能功率模块上表面的密封树脂；
图4是根据本发明实施例的智能功率模块的仰视图；
图5是根据本发明实施例的智能功率模块的电路布线的俯视图；
图6是沿图5中B-B线的剖示图；
图7是根据本发明实施例的智能功率模块的散热片、功率元件和驱动元件的结构示意图；
图8是根据本发明实施例的智能功率模块的制造方法中的底座的俯视图；
图9是根据本发明实施例的底座和载具配合的俯视图；
图10是沿图9中C-C线的剖示图；
图11是根据本发明实施例的智能功率模块的封装密封树脂的示意图；
图12是根据本发明实施例的智能功率模块的封装密封树脂后的仰视图；
图13是根据本发明实施例的智能功率模块的封装密封树脂后的俯视图；
图14是根据本发明实施例的智能功率模块的制造方法的流程图。
附图标记：
智能功率模块100，
电路布线1，焊盘11，
电路元件2，功率元件21，驱动元件22，密封树脂3，散热片4，
底座5，凹槽51，
载具6，固定条61，溢胶7，
上模81，下模82，浇口83，排气口84，
第一植球91，第二植球92。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，术语“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度小于第二特征。
下面参考图1-图14描述根据本发明实施例的智能功率模块100。
根据本发明实施例的智能功率模块100，包括：电路布线1、多个电路元件2和密封树脂3。其中，电路布线1的至少一个端部设有用于与外部电路电连接的焊盘11；多个电路元件2设在电路布线1的上表面上，多个电路元件2中的一部分为功率元件21、另一部分为与功率元件21对应的驱动元件22，至少一个驱动元件22设在与其对应的功率元件21上，功率元件21与驱动元件22分别与电路布线1电连接，密封树脂3设在电路布线1上。
根据本发明实施例的智能功率模块100，通过将驱动元件22设置在功率元件21上，有效地节省了功率元件21和驱动元件22的占用面积，减小了智能功率模块100的面积，从而减小了智能功率模块100的体积，降低了智能功率模块100的成本。此外，通过在电路布线1的至少一个端部设置焊盘11，并通过焊盘11与外部电路电连接，省去了相关技术中智能功率模块100上向外延伸的引脚，避免了因引脚上产生凝露造成的短路，提高了智能功率模块100的可靠性，延长了智能功率模块100的使用寿命，降低了使用成本。
如图1-图3所示，根据本发明实施例的智能功率模块100，包括：电路布线1、多个电路元件2和密封树脂3。
具体地，参照图3-图6，电路布线1的至少一个端部(例如，图3中的前端)设有用于与外部电路电连接的焊盘11。这里，需要说明的是，本申请中所说的“至少一个”指的是一个或者多个。由此，通过焊盘11与外部电路电连接，省去了相关技术中智能功率模块100上向外延伸的引脚，避免了因引脚上产生凝露造成的短路，提高了智能功率模块100的可靠性，延长了智能功率模块100的使用寿命，降低了使用成本。
其中，参照图5并结合图6，焊盘11可以形成为方形结构，焊盘11的纵向截面面积优选大于电路布线1端部的纵向截面面积。由此，可以增大焊盘11与外部电路的接触面积，提高了智能功率模块100与外部电路连接的可靠性。
多个电路元件2设在电路布线1的上表面上，多个电路元件2中的一部分为功率元件21、另一部分为与功率元件21对应的驱动元件22。其中，功率元件21可以为IGBT管、MOS管等发热量大的元器件，驱动元件22可以为与其对应的功率元件21(例如IGBT管、MOS管等)的驱动电路，驱动元件22一般为高压集成电路。
可选地，每个电路元件2为平面型电路元件2，例如，当电路元件2为IGBT时，可以选用L型的IGBT。每个电路元件2具有电极，每个电路元件2通过电极直接与电 路布线1电连接。
其中，平面型的电路元件2指的是所有电极全部位于电路元件2的同一侧表面(例如，图2中的下表面)上的电路元件2。由此，将电路元件2的电极所在的一侧表面与电路布线1的上表面相连，从而可以将电路元件2的电极直接连接在电路布线1上，实现电路元件2与电路布线1的电连接，省去了相关技术中用于实现电路元件2与电路布线1电连接的金属线和绑定金属线的工序，简化了智能功率模块100的加工工艺，提高了生产效率和生产良率，节省了智能功率模块100的材料成本、设备成本和加工成本，从而降低了智能功率模块100的整体成本。
可以理解的是，可以将平面型电路元件2的电极所在的表面称为“正面”(例如，图2中的下表面)，相应地，将平面型电路元件2的与电极相对的一侧表面称为“反面”(例如，图2中的上表面)。在装配过程中，可以将电路元件2的正面与电路布线1的上表面相连，也就是说可以将电路元件2倒扣在电路布线1的上表面上。
具体地，至少一个驱动元件22设在与其对应的功率元件21上，功率元件21与驱动元件22分别与电路布线1电连接。参照图2和图7，驱动元件22可以设置在功率元件21的下表面上，驱动元件22可以通过电极直接与电路布线1电连接，功率元件21也可以通过电极直接与电路布线1电连接。具体地，可以在功率元件21的下表面上通过点胶或喷胶的方式涂敷非导电凝胶，非导电凝胶的涂敷面积比驱动元件22的面积略大，然后通过DA机将驱动元件22放置在非导电凝胶的表面，并避免驱动元件22的上表面与功率元件21的电极接触，然后对非导电凝胶进行烘烤，烘烤温度可以根据非导电凝胶的具体材料调整，一般地，烘烤温度应设定在125℃左右，烘烤时间为1～2小时，以使非导电凝胶完全凝固。驱动元件22的粘晶平整度可以小于0.1mm。
由此，通过将驱动元件22设在与其对应的功率元件21上，有效地减小了驱动元件22和功率元件21的占用面积，从而有效地减小了智能功率模块100的面积和体积，降低了智能功率模块100的成本。此外，还可以减小使用该功率模块的终端产品的面积和体积，有利于终端产品的小型化。
根据本发明的一些实施例，驱动元件22可以通过第一植球91焊接在电路布线1上，功率元件21可以通过第二植球92焊接在电路布线1上，其中第一植球91的高度为A，第二植球92的高度为B,A、B满足：400μm≤B-A≤500μm。由此，可方便地将功率元件21和驱动元件22电连接在电路布线1上。其中，第一植球91和第二植球92的具体高度可以根据功率元件21和驱动元件22的具体规格型号调整设计，只要能将 功率元件21和驱动元件22电连接在电路布线1上即可，本发明对此不作具体限定。例如，第一植球91的高度A和第二植球92的高度B可以进一步满足：B-A＝400μm、B-A＝500μm、B-A＝450μm等。
可选地，第一植球91和第二植球92均可以为锡球，但不限于此。
可选地，驱动元件22具有感温器件，感温器件用于检测与驱动元件22对应的功率元件21的温度。具体地，感温器件可以集成在驱动元件22上，结构简单，加工方便。由此，可以通过感温器件实时监测功率元件21表面的温度，从而可以在智能功率模块100出现异常发热现象时，及时采取措施作出反应，有效地避免了智能功率模块100因过热烧毁，降低了智能功率模块100的损坏几率，提高了智能功率模块100的可靠性。
根据本发明的一些实施例，智能功率模块100进一步包括：散热片4，散热片4与功率元件21的上表面相连。其中，功率元件21的发热量大，将散热片4连接在功率元件21的上表面上可以有效地提高智能功率模块100的散热性能，从而提高了智能功率模块100的可靠性。
可选地，散热片4为铜片，散热效果好且材料成本低。散热片4的厚度为t1，t1满足：1.0mm≤t1≤1.5mm。其具体数值可以根据功率元件21的具体规格型号调整设计，以保证散热片4的散热效果。例如，散热片4的厚度t1可以进一步满足：t1＝1.0mm、t1＝1.2mm或t1＝1.5mm等。
根据本发明的一些实施例，散热片4的外表面具有电镀银层。具体地，可以对散热片4的外表面进行电镀银处理以在散热片4的外表面上形成电镀银层。由此，可以提高散热片4的沁润性，从而进一步地提高了散热片4的散热效果。
可选地，电镀银层的厚度为t2，t2满足：22μm≤t2≤30μm。其具体数值可以根据智能功率模块100的具体规格型号调整设计。例如，电镀银层的厚度t2可以进一步满足：t2＝22μm、t2＝26μm或t2＝30μm等。由此，可以提高散热片4的沁润性。
密封树脂3设在电路布线1上,密封树脂3用于封装电路布线1，以保护电路布线1和电路布线1上的电路元件2，提高智能功率模块100的可靠性。具体地，密封树脂3可以通过传递模方式使用热硬性树脂模制，也可以使用注入模方式使用热塑性树脂模制。
根据本发明的一些实施例，密封树脂3覆盖电路布线1的侧面的上部和电路布线1的上表面，电路布线1的侧面的下部和电路布线1的下表面裸露在密封树脂3外。其 中，参照图1并结合图2和图4，密封树脂3完全覆盖电路布线1的上表面上的电路元件2，散热片4的远离功率元件21的一侧表面露在密封树脂3外。且密封树脂3覆盖电路布线1侧面的大部分高度，电路布线1的侧面下部的小部分高度、电路布线1的下表面裸露在密封树脂3外。也就是说，电路布线1的上表面上除散热片4的上表面之外的部分全部被密封树脂3覆盖，电路布线1的侧面上部被密封树脂3覆盖，电路布线1的侧面下部、电路布线1的下表面裸露在密封树脂3外。
由此，可以有效地提高智能功率模块100的散热性能，避免智能功率模块100的内部产生热积聚，且可以使得电路布线1之间的间隙完全裸露出来，从而使得湿气难以附着在电路布线1上，进而有效地避免了高温高湿环境下智能功率模块100内部的离子，例如氯离子、溴离子等在水汽的作用下发生迁移对电路造成的腐蚀，避免电路布线1的电路和电路元件2的电路发生短路，进一步地提高了智能功率模块100的可靠性，延长了智能功率模块100的使用寿命，降低了智能功率模块100的使用成本。
可选地，电路布线1的侧面裸露在密封树脂3外的高度为h，h满足：0.3盎司≤h≤0.8盎司。例如，电路布线1的侧面裸露在密封树脂3外的高度h可以进一步满足：h＝0.3盎司、h＝0.4盎司、h＝0.5盎司、h＝0.6盎司或h＝0.8盎司等。由此，智能功率模块100在后续焊接固定过程中便于锡膏的爬锡，使得裸露在密封树脂3外的电路布线1可以被锡膏等焊料完全包裹，从而便于将智能功率模块100的装配，提高了智能功率模块100的装配效率和装配的可靠性。
根据本发明的一些实施例，电路布线1采用铜板加工而成，铜板的厚度为t3，t3满足：t3≥5盎司。例如，铜板的厚度t3可以进一步满足：t3＝5盎司、t3＝6盎司、t3＝7盎司等。由此，可以增大电路布线1与密封树脂3的接触面积，便于对智能功率模块100进行固定。
具体地，可以选用横截面积小于64mm×30mm、厚度不小于5盎司的铜板，利用冲压模具在铜板上冲压出电路布线1的形状，形成电路布线1；也可以通过锣刀使用高速钢作为材质，控制电机的转速为5000转/分钟，使锣刀与平面呈直角下刀形成电路布线1的形状；还可以通过蚀刻工具，通过化学反应在铜板上刻蚀出电路布线1的形状。
进一步地，电路布线1的外表面上设有抗氧化层。可选地，抗氧化层可以为金层。例如，可以通过电镀金或化学沉金的方式，在电路布线1的外表面形成金层，以提高电路布线1的抗氧化性，使得智能功率模块100可以适用于对抗氧化要求较高的场合，从而提高了智能功率模块100的性能扩大了智能功率模块100的使用范围。
根据本发明实施例的智能功率模块100，散热性能好、面积小、工艺简单、可靠性高且成本低。
如图1至图13所示的智能功率模块100的制造方法，包括如图14所示的具体步骤：
S1：制作电路布线1；
S2：制作底座5，并根据电路布线1的形状在底座5上挖出凹槽51，将电路布线1的下部放置在凹槽51内；
S3：将驱动元件22连接在功率元件21上，将驱动元件22和功率元件21分别与电路布线1电连接；
S4：采用密封树脂3封装电路布线1；
S5：将电路布线1从底座5中取出，得到智能功率模块100。
其中，电路布线1的侧面的下部伸入凹槽51内，电路布线1的侧面的上部露在凹槽51外。底座5上的凹槽51的宽度可以略大于与其对应的电路布线1的宽度，以便于将电路布线1的下部放置在凹槽51内。
由此，通过底座5可以对电路布线1进行定位，便于将密封树脂3封装在电路布线1上，使得电路布线1的伸入凹槽51内的侧面的下部和下表面露在密封树脂3外，降低了在电路布线1上封装密封树脂3时的定位难度。且将密封树脂3封装在电路布线1上后，需将底座5取出，底座5可以重复利用，省去了相关技术中智能功率模块100中的金属基板，从而，更进一步地降低了智能功率模块100的成本。
同时，相对于传统的被密封树脂3完全密封的智能功率模块100，降低了注胶时电路布线1的上表面和下表面上密封树脂3厚度不一致对参数控制的难度，从而极大地降低了智能功率模块100的制造难度，并提高了制造良率，进而进一步地降低了智能功率模块100的成本。此外，将驱动元件22设置在对应的功率元件21上，有效地减小了智能功率模块100的面积和体积，从而降低了智能功率模块100的成本且有利于使用该智能功率模块100的终端产品的小型化。
根据本发明实施例的智能功率模块100的制造方法，通过将电路布线1放置在可重复利用的底座5上的凹槽51内，通过底座5对电路布线1进行定位，极大地降低了智能功率模块100的制造难度，提高了制造良率，降低了智能功率模块100的成本，有利于智能功率模块100的普及和应用。此外，将驱动元件22设置在对应的功率元件21上，有效地减小了智能功率模块100的面积和体积，从而降低了智能功率模块100的 成本且有利于使用该智能功率模块100的终端产品的小型化。
根据本发明的一些实施例，将电路元件2的电极与电路布线1相连之前，还包括如下步骤：将散热片4贴在功率元件21上。具体地，可以将功率元件21的与电极所在表面相对的一侧表面贴装在散热片4上。如图7所示，功率元件21的电极位于功率元件21的下表面上，可以将功率元件21的上表面贴装在散热片4上。由此，有效地提高了智能功率模块100的散热性能，提高了智能功率模块100的可靠性。
可选地，散热片4可以由厚度为1.5mm左右的铜片通过冲压或刻蚀的方式制作而成，散热片4的外表面可以通过电镀的方式镀银形成电镀银层，然后通过共晶工艺，用熔点300℃以上的高温锡膏，将功率元件21贴装在散热片4上。其中，功率器件的共晶平整度可以控制在0.1mm以内。
具体地，步骤S1具体包括如下步骤：
S11：对铜板进行冲压或者蚀刻形成电路布线1；
S12：对电路布线1的上表面进行抗氧化处理。
具体地，可以选用横截面积小于64mm×30mm、厚度不小于5盎司的铜板，利用冲压模具在铜板上冲压出电路布线1的形状，形成电路布线1；也可以通过蚀刻工具，通过化学反应在铜板上刻蚀出电路布线1的形状。当然，可以理解的是，还可以通过锣刀使用高速钢作为材质，控制电机的转速为5000转/分钟，使锣刀与铝材平面呈直角下刀形成电路布线1的形状。然后，对电路布线1的外表面进行抗氧化处理。
例如，可以通过电镀金或化学沉金的方式，在电路布线1的外表面形成金层，以提高电路布线1的抗氧化性，使得智能功率模块100可以适用于对抗氧化要求较高的场合，从而扩大了智能功率模块100的使用范围。
当然，可以理解的是，当智能功率模块100使用在对抗氧化要求不高的场合时，可以省去上述步骤S12，以简化智能功率模块100的加工工艺，降低加工成本。
具体地，步骤S3具体包括如下步骤：
S31：在功率元件21的下表面上涂敷非导电凝胶，驱动元件22通过非导电凝胶与功率元件21相连；
S32：将电路布线1放置在凹槽51内后，在电路布线1的待安装驱动元件22的位置涂装锡膏并植上第一植球91，在电路布线1的待安装功率元件21的位置涂装锡膏并植上第二植球92；
S33：将驱动的电极放置在第一植球91上，将功率元件21的电极放置在第二植球 92上；
S34：通过回流焊分别将驱动元件22和功率元件21固定在电路布线1上；
S35：清洗电路布线1，以除去残留在电路布线1上的异物。
具体地，将功率元件21的上表面贴装在散热片4的下表面上后，可以在功率元件21的下表面上通过点胶或喷胶的方式涂敷非导电凝胶，非导电凝胶的涂敷面积略大于驱动元件22的面积，然后通过DA机将驱动元件22放置在非导电凝胶的表面，并避免驱动元件22的上表面与功率元件21的电极接触，然后对非导电凝胶进行烘烤，烘烤温度可以根据非导电凝胶的具体材料调整，一般地，烘烤温度应设定在125℃左右，烘烤时间为1～2小时，以使非导电凝胶完全凝固。驱动元件22的粘晶平整度可以小于0.1mm。
然后，将制作好的电路布线1放置在底座5的与其对应的凹槽51内(如图8所示)，并通过锡膏印刷机，使用钢网对电路布线1待安装驱动元件22的位置和待安装功率元件21的位置分别涂装锡膏。为方便描述，在本申请下面的描述中，将电路布线1上待安装驱动元件22的位置称为“第一位置”，相应地，将电路布线1上待安装功率元件21的位置称为“第二位置”。
其中，钢网的厚度可以为0.13mm～0.20mm。在第一位置和第二位置涂装锡膏后，在第一位置植上第一植球91，在第二位置植上第二植球92。也就是说通过涂装锡膏与植球结合的方式安装将驱动元件22和功率元件21连接在电路布线1上。可选地，第一植球91和第二植球92均为锡球。例如，可以利用阶梯钢网，在第一位置和第二位置上涂装相同厚度锡膏、植不同大小锡球，也可以在第一位置和第二位置上涂装不同厚度的锡膏、植相同大小的锡球，还可以在第一位置和第二位置上涂装不同厚度的锡膏、植不同大小的锡球，以将驱动元件22和功率元件21分别连接在电路布线1的第一位置和第二位置上。
例如，根据本发明的一些实施例，参照图2、图10和图11，可以在第一位置和第二位置涂装相同厚度的锡膏，然后在第一位置上植高度为A的第一植球91，在第二位置上植高度为B的第二植球92。其中，第一植球91的高度A和第二植球92的高度B满足：400μm≤B-A≤500μm。
然后通过SMT机或DA机等设备，将驱动元件22的电极放置在第一植球91上，将功率元件21的电极放置在第二植球92上，再将底座5的底部放置于载具6上方，使得底座5的至少一个边缘与载具6接触进行固定(如图9和图10所示)，再通过回 流焊使第一植球91和第二植球92固化以将驱动元件22和功率元件21固定在电路布线1上。由此，可通过载具6对底座5进行定位，防止底座5移动，从而便于通过回流焊将电路元件2(即功率元件21和驱动元件22)固定在电路布线1上。
参照图9并结合图10，载具6可以形成为矩形，载具6的至少一个边缘上设有固定条61，底座5可以从载具6的没有固定条61的一侧边缘推送至载具6上。底座5的至少一个边缘与载具6接触。可选地，载具6可以通过合成石等材料制成，结构强度高且成本低。
例如，在图9的示例中，载具6的三个边缘上设有固定条61，底座5可以从载具6的没有固定条61的一些边缘推送至载具6上。
这里，需要说明的是，本申请中的“SMT”是Surface Mount Technology的缩写，中文可以翻译为“表面组装技术”或“表面贴装技术”，SMT机指的是切片机。“DA”是Die Attach的缩写，中文可以翻译为“芯片粘接”，DA机指的是芯片粘接机。
其中，回流焊过程中回流的时间一般不超过10分钟，以防止回流时间过长导致非导电凝胶融化。此外，由于底座5的存在，即使非导电凝胶软化，驱动元件22与功率元件21的相对位置也不会发生变化，在回流工艺结束后，非导电凝胶会重新硬化将驱动元件22固定在功率元件21上，驱动元件22与功率元件21不会分离。
具体地，清洗电路布线1时，可以将固定在底座5上的电路布线1放入清洗机中进行清洗，以将回流焊时残留的松香等助焊剂以及冲压时残留的铝线等异物洗净。具体地，可以根据电路元件2在电路布线1的排布密度，选择喷淋或者超声或者喷淋与超声结合的清洗方式进行清洗。清洗时，可以通过机械臂夹持底座5，将底座5置于清洗槽中进行清洗。
当回流焊过程中飞溅至电路布线1上的助焊剂较少时，助焊剂对智能功率模块100可靠性的影响较小，此时可以省去清洗电路布线1的工序，节省成本。
进一步地，将电路布线1从底座5中取出后，还包括如下步骤：将密封电路布线1过程中形成的溢胶7去除。
首先参照图11描述一下对电路布线1封装密封树脂3的具体过程。具体地，密封树脂3可以通过传递模方式使用热硬性树脂模制，也可以使用注入模方式使用热塑性树脂模制。
封装密封树脂3时，可以先在无氧环境中对电路布线1进行烘烤，烘烤时间不应小于2小时，烘烤温度可以选择125℃左右。
参照图11，封装模具包括上模81和下模82，上模81和下模82之间限定出模腔。模腔具有浇口83和排气口84。首先将放置好电路布线1的底座5放置在模腔内，并使得散热片4的上表面与上模81接触、底座5的下表面与下模82接触，以对电路布线1进行定位。合模时，从浇口83向模腔内注入密封树脂3，注入过程中，模腔内部的气体可以通过排气口84排放到外部。
在使用密封树脂3封装电路布线1的过程中，电路布线1侧面的露出凹槽51的部分、电路布线1的上表面、电路布线1上表面上的电路元件2和金属线被密封树脂3覆盖。由于压力的作用，部分树脂会进入底座5的凹槽51内，在电路布线1上形成溢胶7，如图12所示。部分密封树脂3还会因为压力进入散热片4和上模81之间，粘附在散热片4的上表面上形成溢胶7，如图13所示。溢胶7的厚度非常薄，一般不会超过0.1mm，可以使用风刀等方式去除，也可以使用化学方法去除。由此，可以避免溢胶7影响散热片4的散热性能、且可以避免溢胶7影响电路布线1的输入与输出连接，提高了智能功率模块100的性能。
除去溢胶7后，可以将智能功率模块100放入测试设备中，进行常规的电参数测试。具体地，可以通过顶针与测试点进行接触测试。如果接触测试不通过，需要对顶针进行修调处理，直到接触测试通过后，再进行电气特性测试，包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。
可选地，凹槽51的深度为H，H满足：0.3盎司≤H≤0.8盎司。例如，凹槽51的深度H可以进一步满足：H＝0.3盎司、H＝0.4盎司、H＝0.5盎司、H＝0.6盎司或H＝0.8盎司等。由此，可使得电路布线1的下部伸入凹槽51内，不被密封树脂3覆盖，且便于智能功率模块100在后续焊接固定过程中便于锡膏的爬锡，使得裸露在密封树脂3外的电路布线1可以被锡膏等焊料完全包裹，从而便于将智能功率模块100的装配，提高了智能功率模块100的装配效率和装配的可靠性。
可选地，底座5为不锈钢件。例如，底座5可以由表面光滑的耐高温钢材加工而成。由此，可以提高底座5的结构强度和耐高温性能，延长底座5的使用寿命，且不锈钢的成本低廉，可以降低材料成本。
根据本发明实施例的智能功率模块100的制造方法，采用可重复使用的底座5对电路布线1进行定位，降低了封装密封树脂3时定位的难度，极大地降低了智能功率模块100的制造难度，提高了制造良率，降低了智能功率模块100的成本，有利于智能功率模块100的普及和应用。此外，将驱动元件22连接在功率元件21上后，再将驱动元件22的 电极和功率元件21的电极直接与电路布线1连接，减小了智能功率模块100的面积，省去了相关技术中邦定金属线的工序，进一步地节省了成本，提高了生产效率。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例，本领域的普通技术人员可以理解：在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。

Claims (19)

  1. 一种智能功率模块，其特征在于，包括：
    电路布线，所述电路布线的至少一个端部设有用于与外部电路电连接的焊盘；
    多个电路元件，多个所述电路元件设在所述电路布线的上表面上，多个所述电路元件中的一部分为功率元件、另一部分为与所述功率元件对应的驱动元件，至少一个所述驱动元件设在与其对应的所述功率元件上，所述功率元件与所述驱动元件分别与所述电路布线电连接；
    密封树脂，所述密封树脂设在所述电路布线上。
  2. 根据权利要求1所述的智能功率模块，其特征在于，每个所述电路元件为平面型电路元件，每个所述电路元件具有电极，每个所述电路元件通过电极直接与所述电路布线电连接。
  3. 根据权利要求2所述的智能功率模块，其特征在于，所述驱动元件通过第一植球焊接在所述电路布线上，所述功率元件通过所述第二植球焊接在所述电路布线上，所述第一植球的高度为A，所述第二植球的高度为B,所述A、B满足：400μm≤B-A≤500μm。
  4. 根据权利要求1至3中任一项所述的智能功率模块，其特征在于，所述驱动元件具有感温器件，所述感温器件用于检测对应的所述功率元件的温度。
  5. 根据权利要求2所述的智能功率模块，其特征在于，进一步包括：
    散热片，所述散热片与所述功率元件的上表面相连。
  6. 根据权利要求5所述的智能功率模块，其特征在于，所述密封树脂覆盖所述电路布线的侧面的上部和所述电路布线的上表面，所述电路布线的所述侧面的下部和所述电路布线的下表面裸露在所述密封树脂外。
  7. 根据权利要求6所述的智能功率模块，其特征在于，所述密封树脂完全覆盖所述电路布线上表面上的所述电路元件，所述散热片的远离所述功率元件的一侧表面露在所述密封树脂外。
  8. 根据权利要求6所述的智能功率模块，其特征在于，所述电路布线的所述侧面裸露在所述密封树脂外的高度为h，所述h满足：0.3盎司≤h≤0.8盎司。
  9. 根据权利要求5所述的智能功率模块，其特征在于，所述散热片为铜片，所述散热片的厚度为t1，所述t1满足：1.0mm≤t1≤1.5mm。
  10. 根据权利要求5所述的智能功率模块，其特征在于，所述散热片的外表面具有电镀银层。
  11. 根据权利要求10所述的智能功率模块，其特征在于，所述电镀银层的厚度为t2， 所述t2满足：22μm≤t2≤30μm。
  12. 根据权利要求1至3中任一项所述的智能功率模块，其特征在于，所述电路布线采用铜板加工而成，所述铜板的厚度为t3，所述t3满足：t3≥5盎司。
  13. 一种根据权利要求1至12中任一项所述的智能功率模块的制造方法，其特征在于，包括以下步骤：
    S1：制作电路布线；
    S2：制作底座，并根据所述电路布线的形状在所述底座上挖出凹槽，将所述电路布线的下部放置在所述凹槽内；
    S3：将所述驱动元件连接在所述功率元件上，将所述驱动元件和所述功率元件的分别与所述电路布线电连接；
    S4：采用密封树脂封装所述电路布线；
    S5：将所述电路布线从所述底座中取出，得到智能功率模块。
  14. 根据权利要求13所述的智能功率模块的制造方法，其特征在于，将所述电路元件的电极与所述电路布线相连之前，还包括如下步骤：
    将散热片贴在所述功率元件上。
  15. 根据权利要求13所述的智能功率模块的制造方法，其特征在于，所述步骤S1具体包括如下步骤：
    S11：对铜板进行冲压或者蚀刻形成所述电路布线；
    S12：对所述电路布线的上表面进行抗氧化处理。
  16. 根据权利要求13至15中任一项所述的智能功率模块的制造方法，其特征在于，所述步骤S3具体包括如下步骤：
    S31：在所述功率元件的下表面上涂敷非导电凝胶，所述驱动元件通过所述非导电凝胶与所述功率元件相连；
    S32：将所述电路布线放置在所述凹槽内后，在所述电路布线的待安装所述驱动元件的位置涂装锡膏并植上第一植球，在所述电路布线的待安装所述功率元件的位置涂装锡膏并植上第二植球；
    S33：将所述驱动的电极放置在所述第一植球上，将所述功率元件的电极放置在所述第二植球上；
    S34：通过回流焊分别将所述驱动元件和所述功率元件固定在所述电路布线上；
    S35：清洗电路布线，以除去残留在电路布线上的异物。
  17. 根据权利要求13至15中任一项所述的智能功率模块的制造方法，其特征在于，将所述电路布线从所述底座中取出后，还包括如下步骤：
    将密封所述电路布线过程中形成的溢胶去除。
  18. 根据权利要求13至15中任一项所述的智能功率模块的制造方法，其特征在于，所述凹槽的深度为H，所述H满足：0.3盎司≤H≤0.8盎司。
  19. 根据权利要求13至15中任一项所述的智能功率模块的制造方法，其特征在于，所述底座为不锈钢件。
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