CN203589006U - 一种aaqfn二次塑封与二次植球优化的封装件 - Google Patents

一种aaqfn二次塑封与二次植球优化的封装件 Download PDF

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CN203589006U
CN203589006U CN201220737305.7U CN201220737305U CN203589006U CN 203589006 U CN203589006 U CN 203589006U CN 201220737305 U CN201220737305 U CN 201220737305U CN 203589006 U CN203589006 U CN 203589006U
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王虎
谌世广
刘卫东
朱文辉
徐召明
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Huatian Technology Xian Co Ltd
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract

本实用新型公开了一种AAQFN二次塑封与二次植球优化的封装件，所述封装件主要由蚀刻后铜引线框架、粘片胶、芯片、键合线、塑封料、蚀刻凹槽、锡球、镍钯金镀层组成。本实用新型具有节约封装成本、以及散热性、电性能和共面性好等特点。

Description

一种AAQFN二次塑封与二次植球优化的封装件
技术领域
本实用新型涉及于半导体封装技术领域，具体是一种AAQFN二次塑封与二次植球优化的封装件。 
背景技术
随着技术的不断发展，电子封装不但要提供芯片的保护，同时还要在一定的成本下满足不断增加的性能、可靠性、散热、功率分配等要求。 
AAQFN封装在成熟的蚀刻工艺技术基础上，从框架设计、材料选择、焊盘结构优化等方面入手，建立完善的封装工艺技术，不断调整优化，突破窄间距（0.4mm）、超薄型（0.5mm 以下）封装技术难点，实现面内I/O 布局列阵AAQFN 封装，形成成套封装工艺技术，在一定的成本下满足了不断增加的性能、可靠性、散热、功率分配等要求。 
    以往的AAQFN封装工艺主要是在框架蚀刻凹槽刷Solder mask，然后在引脚植入锡球，而AAQFN二次塑封与二次植球优化在此基础上代替蚀刻凹槽刷Solder mask，采用二次塑封，二次塑封时不用贴膜，将锡球全部封住，然后采用磨屑的方法将二次塑封体去掉一部分，露出锡球横截面，随后在锡球表面电镀镍钯金，再进行二次植球。从而在低成本要求下满足不断增加的性能、可靠性、散热、功率分配等要求，具有明显的技术优势。 
实用新型内容
针对上述封装技术存在的问题，本实用新型提供了一种AAQFN二次塑封与二次植球优化的封装件，其在以往AAQFN封装技术的基础上，对产品进行二次塑封与二次植球优化，促进了电子封装技术的发展。 
本实用新型的技术方案是：一种AAQFN二次塑封与二次植球优化的封装件，主要由蚀刻后铜引线框架、粘片胶、芯片、键合线、塑封体、蚀刻凹槽、锡球、镍钯金镀层组成。所述的蚀刻后铜引线框架是半蚀刻处理，其通过粘片胶粘接芯片，芯片通过键合线与蚀刻后铜引线框架的引脚相连，所述蚀刻后铜引线框架、蚀刻后铜引线框架的引脚、芯片和键合线由塑封体包围连接；所述蚀刻凹槽由蚀刻后铜引线框架底部蚀刻后形成，所述锡球由蚀刻后的引脚底部刷锡膏回流后形成，蚀刻凹槽与锡球由塑封体包围连接；所述锡球的横截面由磨屑形成，锡球的横截面有镍钯金电镀层，所述锡球浸锡回流后在镍钯金电镀层上形成。 
该封装件的制作工艺主要按照以下步骤进行：铜框架半蚀刻、晶圆减薄、晶圆划片、上芯、压焊、一次塑封、框架背面蚀刻、刷锡膏回流、二次塑封、磨屑部分塑封体、锡球电镀镍钯金、二次植球。 
AAQFN二次塑封与二次植球优化在以往技术的基础上进一步改进，无需Solder mask底部填充，二次塑封时不用贴膜，节省了材料的消耗，从而就节约了封装成本；AAQFN二次塑封与二次植球优化通过二次塑封将球全部封住，然后采用磨屑的方法将二次塑封体去掉一部分，露出锡球横截面，在锡表面电镀镍钯金，进行二次植球，可提高导电性、润滑性、耐热性、和表面美观，具有明显的技术优势，能够实现多引脚、高密度、小型薄型化封装，具有散热性、电性能以及共面性好等特点。本实用新型为无铅、无卤素的环保型先进封装技术，可应用于更大范围的移动、消费电子产品上，满足移动通信和移动计算机领域的便捷式电子机器，如PDA、3G手机、MP3、MP4、MP5等超薄型电子产品发展的需要，是迅速成长起来的一种新型封装技术。 
说明书附图
图1 引线框架剖面图；
图2 上芯后产品剖面图；
图3 压焊后产品剖面图；
图4 一次塑封后产品剖面图；
图5框架背面蚀刻后产品剖面图；
图6锡膏回流焊后产品剖面图；
图7二次塑封后产品剖面图；
图8 磨屑后产品剖面图；
图9 锡球截面电镀后产品剖面图；
图10 二次植球后产品剖面图。
图中、1为蚀刻后铜引线框架、2为粘片胶、3为芯片、4为键合线、5为第一塑封体、6为蚀刻凹槽、7为第一锡球、8为第二塑封体、9为镍钯金电镀层、10为第二锡球。 
具体实施方式
下面结合附图对本实用新型做进一步详细叙述。 
如图所示，一种AAQFN二次塑封与二次植球优化的封装件，主要由蚀刻后铜引线框架1、粘片胶2、芯片3、键合线4、第一塑封体5和第二塑封体8、蚀刻凹槽6、第一锡球7和第二锡球10、镍钯金镀层9组成。所述的蚀刻后铜引线框架1是半蚀刻处理，其通过粘片胶2粘接芯片3，芯片3通过键合线4与蚀刻后铜引线框架1的引脚相连，所述蚀刻后铜引线框架1、蚀刻后铜引线框架1的引脚、芯片3和键合线4由第一塑封体5包围连接；所述蚀刻凹槽6由蚀刻后铜引线框架1底部蚀刻后形成，所述第一锡球7由蚀刻后的引脚底部刷锡膏回流后形成，蚀刻凹槽6与第一锡球7由第二塑封体8包围连接；所述第一锡球7的横截面由磨屑形成，第一锡球7的横截面有镍钯金电镀层9，所述第二锡球10浸锡回流后在镍钯金电镀层9上形成。 
如图所示，一种AAQFN二次塑封与二次植球优化的封装件的制作工艺，其按照以下步骤进行： 
第一步、铜引线框架蚀刻：将铜引线框架进行半蚀刻，依据芯片pad分布结构，通过成熟的涂胶、曝光、显影、电镀及腐蚀等工艺，在铜板正面蚀刻出载体，互连线，I/O Pad，确定I/O Pad大小，脚间距和它们各自的位置；如图1所示；
第二步、晶圆减薄和划片：在晶圆正面贴上胶膜，然后在专用减薄机上进行减薄达到工艺要求；减薄完的晶圆清洗经检验合格后，去掉正面胶膜，在晶圆背面贴上胶膜后再进行划片，将晶圆划成单个IC芯片；
第三步、上芯：使用专用上料夹，用点胶头均匀的将粘片胶2（导电胶或绝缘胶）点在蚀刻后铜引线框架1的PAD上，吸嘴将承片台上的芯片3吸起放置到已点好粘片胶2的蚀刻后铜引线框架1上，粘片后框架自动送到弹夹中；如图2所示；
第四步、压焊：在专用压焊机上，键合线4采用金线或铜线，通过球焊把芯片3上的焊盘（PAD）和蚀刻后铜引线框架1的引脚相连，形成了电路的电源和信号通道；如图3所示；
第五步、一次塑封：采用塑料包封系统将压焊后的产品自动传送到塑封模具中，用第一塑封体5对压焊后的产品进行包封，随后进行固化；如图4所示；
第六步、框架背面蚀刻：对蚀刻后铜引线框架1进行背面蚀刻，将选定的露铜部分蚀刻掉，进行引脚分离；如图 5所示；
第七步、刷锡膏回流：在蚀刻后引脚底部进行钢网刷锡膏，形成的锡膏进行回流焊后形成第一锡球7；如图6所示；
第八步、二次塑封：用第二塑封体8完全包封第一锡球7与底部蚀刻凹槽6，随后进行固化；如图7所示；
第九步、磨屑部分塑封体、锡球电镀镍钯金、二次植球：采用磨屑的方法将二次第二塑封体8去掉一部分，露出第一锡球7横截面，然后在第一锡球7横截面上电镀镍钯金形成镍钯金电镀层9，再通过浸锡回流在镍钯金电镀层9上植入第二锡球10；如图8、图9和图10。

Claims (1)

1.一种AAQFN二次塑封与二次植球优化的封装件，其特征在于：主要由蚀刻后铜引线框架（1）、粘片胶（2）、芯片（3）、键合线（4）、第一塑封体（5）和第二塑封体（8）、蚀刻凹槽（6）、第一锡球（7）和第二锡球（10）、镍钯金电镀层（9）组成；所述的蚀刻后铜引线框架（1）是半蚀刻处理，其通过粘片胶（2）粘接芯片（3），芯片（3）通过键合线（4）与蚀刻后铜引线框架（1）的引脚相连，所述蚀刻后铜引线框架（1）、蚀刻后铜引线框架（1）的引脚、芯片（3）和键合线（4）由第一塑封体（5）包围连接；所述蚀刻凹槽（6）由蚀刻后铜引线框架（1）底部蚀刻后形成，所述第一锡球（7）由蚀刻后的引脚底部刷锡膏回流后形成，蚀刻凹槽（6）与第一锡球（7）由第二塑封体（8）包围连接；所述第一锡球（7）的横截面由磨屑形成，第一锡球（7）的横截面有镍钯金电镀层（9），所述第二锡球（10）浸锡回流后在镍钯金电镀层（9）上形成。
CN201220737305.7U 2012-12-28 2012-12-28 一种aaqfn二次塑封与二次植球优化的封装件 Expired - Fee Related CN203589006U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111564377A (zh) * 2020-05-18 2020-08-21 无锡中微高科电子有限公司 框架类集成电路的塑料封装方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111564377A (zh) * 2020-05-18 2020-08-21 无锡中微高科电子有限公司 框架类集成电路的塑料封装方法
CN111564377B (zh) * 2020-05-18 2023-08-11 无锡中微高科电子有限公司 框架类集成电路的塑料封装方法

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