CN203562442U - 一种大功率型led封装结构 - Google Patents

一种大功率型led封装结构 Download PDF

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CN203562442U
CN203562442U CN201320406979.3U CN201320406979U CN203562442U CN 203562442 U CN203562442 U CN 203562442U CN 201320406979 U CN201320406979 U CN 201320406979U CN 203562442 U CN203562442 U CN 203562442U
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ppa
support
led
copper post
ppa support
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龚文
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Shenzhen Jingtai Co ltd
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Shenzhen Jingtai Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

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  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

本实用新型公开了一种大功率型LED封装结构，包括PPA支架及设置于PPA支架中央的用于散热的铜柱，所述铜柱顶部具有下陷的凹部，所述铜柱凹部固定有发光晶片，所述发光晶片通过金线连接到PPA支架上，所述铜柱凹部填充荧光胶，所述PPA支架和铜柱的上部填充封装胶，所述封装胶和所述PPA支架构成一腔体。本实用新型所述LED封装结构具有结构设计合理，出光效率高，出光均匀，无眩光，配光曲线分布均匀等优点，适合于各种LED照明，特别是LED路灯照明。

Description

一种大功率型LED封装结构
技术领域
本实用新型涉及LED制造技术领域，尤其涉及一种出光效率高、出光均匀、无眩光、配光曲线分布均匀的大功率型LED封装结构。 
背景技术
LED(发光二极管)应用非常广泛，作为半导体光源，相比传统照明光源，具有节能、寿命长、绿色环保、使用电压低等优点。 
LED封装技术和结构先后经历了三个阶段，1、引脚式(Lamp)LED封装引脚式封装就是常用的3-5mm封装结构。一般用于电流较小(20-30mA)，功率较低(小于0.1W)的LED封装。主要用于仪表显示或指示，大规模大规模集成时也可作为显示屏。其缺点在于封装热阻较大，寿命较短。2、表面组装(贴片)式(SMD-LED)封装表面组装技术(SMD)是一种可以直接将封装好的器件贴焊到PCB表面指定位置上的一种封装技术，3、随着混合集成电路技术的飞速发展、大功率器件的广泛应用以及器件更高性能的要求，对封装材料提出了更新、更高的要求：成本低，出光效率高，出光均匀，无眩光，光衰小，良好的导热性能，传统材料不再适用于高功率密度器件的封装。而且成本较高，已不能满足这种高功率密度的需要。 
实用新型内容
本实用新型的目的是针对现有技术的不足，提供一种出光效率高、出光均匀、无眩光、配光曲线分布均匀的新型大功率型LED封装结构。 
为了实现上述目的，本实用新型提供的技术方案为：一种大功率型LED封装结构，包括PPA支架及设置于PPA支架中央的用于散热的铜柱，所述铜 柱顶部具有下陷的凹部，所述铜柱凹部固定有发光晶片，所述发光晶片通过金线连接到PPA支架上，所述铜柱凹部填充荧光胶，所述PPA支架和铜柱的上部填充封装胶，所述封装胶和所述PPA支架构成一腔体。 
所述PPA支架的两边设有第一引脚和第二引脚，所述发光晶片通过金线连接到所述第一引脚和第二引脚。 
所述PPA支架组成在一起形成PPA整体支架，所述PPA整体支架长度为14.5毫米，椭圆宽度为8毫米。 
与现有技术相比，本实用新型的有益效果在于：本实用新型所述大功率型LED封装结构，结构设计合理，易于批量化生产，利用二次光学设计原理，出光效率高，出光均匀，无眩光，配光曲线分布均匀，具有较好的应用前景，适合于各种LED照明，特别是LED路灯照明。 
附图说明
下面利用附图来对本实用新型进行进一步的说明，但是附图中的实施例不构成对本实用新型的任何限制。 
图1为本实用新型所述LED封装结构的侧面结构示意图。 
图2为本实用新型所述LED封装结构的正面结构示意图。 
具体实施方式
为了更好的理解本实用新型的技术方案，下面结合附图详细描述本实用新型提供的实施例。 
如图1和图2所示，本实用新型实施例提供一种出光效率高、出光均匀、无眩光、配光曲线分布均匀的新型大功率型LED封装结构，包括PPA支架 104及设置于PPA支架104中央的用于散热的铜柱106，所述铜柱106顶部具有下陷的凹部，所述铜柱106凹部固定有发光晶片101，所述发光晶片通过金线102连接到PPA支架104上，所述铜柱106凹部填充荧光胶105，所述PPA支架104和铜柱106的上部填充封装胶103，所述封装胶103和所述PPA支架104构成一腔体。 
所述PPA支架104的两边设有第一引脚107和第二引脚108，所述发光晶片101通过金线102连接到所述第一引脚107和第二引脚108。 
所述PPA支架104组成在一起形成PPA整体支架(如图2所示)，所述PPA整体支架长度为14.5毫米，椭圆宽度为8毫米。 
具体封装过程包括如下步骤：在PPA支架104两边上预留注胶孔和排气孔；将LED发光晶片101安装于铜柱106上；在封装铜柱106内壁点荧光胶105；利用承载框连接点荧光胶的铜柱106与封装外壳(图中未示出)，使封装外壳与铜柱106之间形成空腔；将模条放在支架104上，支架与模条对齐合上压紧，放入模具中用螺丝拧紧，将胶水通过注胶孔注入盖好模条封装外壳与铜柱所形成的空腔内，空腔内的气体通过排气孔排出；将注胶完的LED器件进行烘烤固化。 
本实用新型大功率型LED的封装结构，通过在铜柱内壁点荧光胶，使铜柱作为荧光胶的承载体，同时，通过在封装外壳以及铜柱之间注胶的方式，实现封装，生产工艺简单，适合大批量生产，其中模条采用二次光学设计，可以收集从LED芯片发出的全部180度的光，并重新分配到指定的区域，自由曲面的配光可以使LED路灯光强的远场角度分布呈蝙蝠翼型，使光斑成矩 形(b图)，并且光斑的中间和边缘比较均匀，做成成品后使得大部分光都分布在道路面上以提高灯光的利用率，减少不必要的浪费。利用边缘光线原理，还可以实现截光设计，消除眩光。 
相比透镜型的LED封装结构，透镜式的封装不能过回流焊，也不耐高温，模条式的封装结构可进行回流焊，可靠性更高，耐高温，生产效率更高。 
其中朗伯型(圆形)大功率做成路灯还需要进行二次光学配光，大功率型经过二次光学配光，做成路灯直接使用，无需再进行二次配光，方便使用。 
总体上来讲，本实用新型所述大功率型LED封装结构，结构设计合理，易于批量化生产，利用二次光学设计原理，出光效率高，出光均匀，无眩光，配光曲线分布均匀，具有较好的应用前景，适合于各种LED照明，特别是LED路灯照明。 
以上内容仅为本实用新型的较佳实施例，对于本领域的普通技术人员，依据本实用新型的思想，在具体实施方式及应用范围上均会有改变之处，本说明书内容不应理解为对本实用新型的限制。 

Claims (3)

1.一种大功率型LED封装结构，其特征在于：包括PPA支架及设置于PPA支架中央的用于散热的铜柱，所述铜柱顶部具有下陷的凹部，所述铜柱凹部固定有发光晶片，所述发光晶片通过金线连接到PPA支架上，所述铜柱凹部填充荧光胶，所述PPA支架和铜柱的上部填充封装胶，所述封装胶和所述PPA支架构成一腔体。 
2.如权利要求1所述的大功率型LED封装结构，其特征在于：所述PPA支架的两边设有第一引脚和第二引脚，所述发光晶片通过金线连接到所述第一引脚和第二引脚。 
3.如权利要求1所述的大功率型LED封装结构，其特征在于：所述PPA支架组成在一起形成PPA整体支架，所述PPA整体支架长度为14.5毫米，椭圆宽度为8毫米。 
CN201320406979.3U 2013-07-03 2013-07-03 一种大功率型led封装结构 Expired - Lifetime CN203562442U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598239A (zh) * 2017-07-22 2018-09-28 深圳腾杰光电科技有限公司 Led食人鱼灯珠
CN111370551A (zh) * 2018-12-25 2020-07-03 亿光电子(中国)有限公司 发光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598239A (zh) * 2017-07-22 2018-09-28 深圳腾杰光电科技有限公司 Led食人鱼灯珠
CN111370551A (zh) * 2018-12-25 2020-07-03 亿光电子(中国)有限公司 发光装置

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