CN202945378U - Heat insulation device for growth of YVO4 crystal - Google Patents
Heat insulation device for growth of YVO4 crystal Download PDFInfo
- Publication number
- CN202945378U CN202945378U CN 201220602128 CN201220602128U CN202945378U CN 202945378 U CN202945378 U CN 202945378U CN 201220602128 CN201220602128 CN 201220602128 CN 201220602128 U CN201220602128 U CN 201220602128U CN 202945378 U CN202945378 U CN 202945378U
- Authority
- CN
- China
- Prior art keywords
- quartz cylinder
- crucible
- heat insulation
- growth
- al2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 238000009413 insulation Methods 0.000 title abstract description 12
- 229910009372 YVO4 Inorganic materials 0.000 title abstract 4
- 239000010453 quartz Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 16
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 150000002503 iridium Chemical class 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052593 corundum Inorganic materials 0.000 abstract 5
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 abstract 1
- 230000009466 transformation Effects 0.000 description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Images
Abstract
The utility model provides a heat insulation device for the growth of a YVO4 crystal. The heat insulation device comprises a quartz cylinder, a support cylinder, an Al2O3 (aluminum oxide) tray, an Ir (iridium) crucible, a calcium-stabilizing ZrO2 (zirconium dioxide) granular layer and a thermocouple, wherein the quartz cylinder is arranged above the support cylinder; the Al2O3 tray is arranged between the quartz cylinder and the support cylinder; the Ir crucible is arranged in the quartz cylinder; an Al2O3 gasket is arranged between the outer side wall of the Ir crucible and the inner wall of the quartz cylinder; the calcium-stabilizing ZrO2 granular layer is arranged in the quartz cylinder and between the Ir crucible and the Al2O3 tray; the thermocouple penetrates through the Al2O3 tray; and the measuring end of the thermocouple is adjacent to the Ir crucible. The structure of a heat insulation layer can be kept stable, thus a thermal field for the growth of the YVO4 crystal can be more stable, and the quality of the YVO4 crystal can be improved.
Description
[technical field]
The utility model is specifically related to a kind of YVO
4The attemperator of crystal growth.
[background technology]
Present YVO
4The thermal insulation layer that uses around the crucible of crystal growth is generally zirconia layer, and zirconium white has three kinds of crystal habits: monocline, four directions, cube crystalline phase.Under normal temperature, zirconium white only occurs with monoclinic phase, is heated to 1100 ℃ of left/right rotations and becomes Tetragonal, is heated to higher temperature and can be converted into Emission in Cubic.Owing to can producing larger volume change at monoclinic phase in tetragonal phase converting, again larger volume change can occur in the opposite direction in the time of cooling.
YVO
4The fusing point of crystal is 1810 ℃, and the temperature around crystal when growth crucible is close to 1900 ℃, each YVO
4All will carry out the crystal growth near the high temperature fusing point, growth is annealed to room temperature after finishing again.Primary device can be reused repeatedly, grow many crystal, need to repeatedly pass through the zirconium white transformation temperature, thermal insulation layer zirconia layer around crucible can carry out phase transformation repeatedly, and during due to phase transformation, volume has corresponding variation, causes crucible heat insulation layer structure on every side unstable, can change always, the cavity layer even occurs, badly influence the stable of warm of crystal growth, and then have influence on the crystal mass of growth.
[utility model content]
Technical problem to be solved in the utility model is to provide a kind of YVO
4The attemperator of crystal growth, it is stable that heat insulation layer structure can keep, and makes warm of crystal growth more stable, thereby be conducive to improve crystal mass.
The utility model solves the problems of the technologies described above by the following technical programs: a kind of YVO
4The attemperator of crystal growth comprises a quartz cylinder, a support tube, an aluminium sesquioxide pallet, an iridium crucible, a calcium stable ZrO
2Granular layer and a thermopair; Described quartz cylinder is positioned at the top of support tube; Described aluminium sesquioxide pallet is located between quartz cylinder and support tube; Described iridium crucible is located at quartz cylinder inside, and is provided with an aluminium sesquioxide packing ring between the outer side wall of this iridium crucible and quartz cylinder inwall; Described calcium stable ZrO
2Granular layer is located at quartz cylinder inside, and between iridium crucible and aluminium sesquioxide pallet; Described thermopair passes the aluminium sesquioxide pallet, and the contiguous described iridium crucible of the measuring junction of this thermopair.
The beneficial effects of the utility model are: heat insulation layer structure can keep stable, makes warm of crystal growth more stable, thereby is conducive to improve crystal mass.
[description of drawings]
The utility model will be further described in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is the utility model YVO
4The longitudinal section of the attemperator of crystal growth.
[embodiment]
See also Fig. 1, a kind of YVO
4The attemperator of crystal growth comprises a quartz cylinder 5, a support tube 7, an aluminium sesquioxide pallet 6, an iridium crucible 2, a calcium stable ZrO
2 Granular layer 3 and a thermopair 4; Described quartz cylinder 5 is positioned at the top of support tube 7; Described aluminium sesquioxide pallet 6 is located between quartz cylinder 5 and support tube 7; Described iridium crucible 2 is located at quartz cylinder 5 inside, and is provided with an aluminium sesquioxide packing ring 1 between the outer side wall of this iridium crucible 2 and quartz cylinder 5 inwalls; Described calcium stable ZrO2 granular layer 3 is located at quartz cylinder 5 inside, and between iridium crucible 2 and aluminium sesquioxide pallet 6; Described thermopair 4 passes aluminium sesquioxide pallet 6, and the contiguous described iridium crucible 2 of the measuring junction of this thermopair 4.
Thermal insulation layer of the present utility model adopts calcium stable ZrO
2 Granular layer 3, and the crystal habit of calcia-stabilised zirconia is Tetragonal, can stablize at normal temperatures, at YVO
4In crystal growing process, thermal insulation layer calcium stable ZrO2 granular layer 3 can not produce the problem that causes volume change because of phase transformation, thereby heat insulation layer structure of the present utility model can keep stable, makes crystal growth temperature more stable, thereby is conducive to improve crystal mass.
Although more than described embodiment of the present utility model; but being familiar with those skilled in the art is to be understood that; our described specific embodiment is illustrative; rather than for the restriction to scope of the present utility model; those of ordinary skill in the art are in modification and the variation of the equivalence of doing according to spirit of the present utility model, all should be encompassed in the scope that claim of the present utility model protects.
Claims (1)
1. YVO
4The attemperator of crystal growth is characterized in that: comprise a quartz cylinder, a support tube, an aluminium sesquioxide pallet, an iridium crucible, a calcium stable ZrO
2Granular layer and a thermopair; Described quartz cylinder is positioned at the top of support tube; Described aluminium sesquioxide pallet is located between quartz cylinder and support tube; Described iridium crucible is located at quartz cylinder inside, and is provided with an aluminium sesquioxide packing ring between the outer side wall of this iridium crucible and quartz cylinder inwall; Described calcium stable ZrO
2Granular layer is located at quartz cylinder inside, and between iridium crucible and aluminium sesquioxide pallet; Described thermopair passes the aluminium sesquioxide pallet, and the contiguous described iridium crucible of the measuring junction of this thermopair.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220602128 CN202945378U (en) | 2012-11-14 | 2012-11-14 | Heat insulation device for growth of YVO4 crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220602128 CN202945378U (en) | 2012-11-14 | 2012-11-14 | Heat insulation device for growth of YVO4 crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202945378U true CN202945378U (en) | 2013-05-22 |
Family
ID=48421085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220602128 Expired - Fee Related CN202945378U (en) | 2012-11-14 | 2012-11-14 | Heat insulation device for growth of YVO4 crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202945378U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107653487A (en) * | 2017-10-23 | 2018-02-02 | 安徽中晶光技术股份有限公司 | A kind of recycling bin for being used in crystal growing process reclaim iridium powder |
| WO2021031140A1 (en) * | 2019-08-21 | 2021-02-25 | 眉山博雅新材料有限公司 | Open temperature field |
| CN112771213A (en) * | 2020-06-05 | 2021-05-07 | 眉山博雅新材料有限公司 | Method and apparatus for high uniformity crystal growth without annealing |
-
2012
- 2012-11-14 CN CN 201220602128 patent/CN202945378U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107653487A (en) * | 2017-10-23 | 2018-02-02 | 安徽中晶光技术股份有限公司 | A kind of recycling bin for being used in crystal growing process reclaim iridium powder |
| WO2021031140A1 (en) * | 2019-08-21 | 2021-02-25 | 眉山博雅新材料有限公司 | Open temperature field |
| CN112567076A (en) * | 2019-08-21 | 2021-03-26 | 眉山博雅新材料有限公司 | Open type temperature field |
| US10982349B2 (en) * | 2019-08-21 | 2021-04-20 | Meishan Boya Advanced Materials Co., Ltd. | Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum |
| US20210207285A1 (en) * | 2019-08-21 | 2021-07-08 | Meishan Boya Advanced Materials Co., Ltd. | Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum |
| CN112567076B (en) * | 2019-08-21 | 2021-11-16 | 眉山博雅新材料股份有限公司 | Open type temperature field |
| CN114214721A (en) * | 2019-08-21 | 2022-03-22 | 眉山博雅新材料股份有限公司 | Open type temperature field |
| US11441233B2 (en) * | 2019-08-21 | 2022-09-13 | Meishan Boya Advanced Materials Co., Ltd. | Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum |
| CN112771213A (en) * | 2020-06-05 | 2021-05-07 | 眉山博雅新材料有限公司 | Method and apparatus for high uniformity crystal growth without annealing |
| US11655557B2 (en) | 2020-06-05 | 2023-05-23 | Meishan Boya Advanced Materials Co., Ltd. | Methods and devices for growing crystals with high uniformity without annealing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130522 Termination date: 20151114 |
|
| EXPY | Termination of patent right or utility model |